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JPH071214B2 - Semiconductor pressure sensor - Google Patents
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JPH071214B2 - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPH071214B2
JPH071214B2 JP62066607A JP6660787A JPH071214B2 JP H071214 B2 JPH071214 B2 JP H071214B2 JP 62066607 A JP62066607 A JP 62066607A JP 6660787 A JP6660787 A JP 6660787A JP H071214 B2 JPH071214 B2 JP H071214B2
Authority
JP
Japan
Prior art keywords
base
pressure sensor
pellet
silicon
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62066607A
Other languages
Japanese (ja)
Other versions
JPS63233342A (en
Inventor
一昭 高見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP62066607A priority Critical patent/JPH071214B2/en
Publication of JPS63233342A publication Critical patent/JPS63233342A/en
Publication of JPH071214B2 publication Critical patent/JPH071214B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

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  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Description

【発明の詳細な説明】 (イ)産業上の利用分野 本発明は半導体圧力センサに関する。DETAILED DESCRIPTION OF THE INVENTION (A) Field of Industrial Application The present invention relates to a semiconductor pressure sensor.

(ロ)従来の技術 ダイアフラム部をもつシリコン圧力センサペレットを基
台に装着せる形態の半導体圧力センサはダイアフラム部
が被測定圧力により変形したときその変形量をピエゾ抵
抗効果を利用して電気量に変換し、圧力検出をなすもの
である。
(B) Conventional technology A semiconductor pressure sensor in which a silicon pressure sensor pellet having a diaphragm is mounted on a base is used. When the diaphragm deforms due to the measured pressure, the amount of deformation is converted into an electric quantity by using the piezoresistive effect. It is converted to perform pressure detection.

従つて、この種のセンサでは、被測定圧力以外の他の要
因によりダイアフラム部が変形すると、もはや正確な圧
力検出を行えない。通常、最も問題となる上記他の要因
はセンサペレットと基台との間の熱膨張係数の差であ
る。即ち、この場合、温度変化によつてセンサの出力が
変化してしまうのである。
Therefore, in this type of sensor, if the diaphragm portion is deformed by factors other than the measured pressure, accurate pressure detection can no longer be performed. Another factor that is usually the most problematic is the difference in coefficient of thermal expansion between the sensor pellet and the base. That is, in this case, the output of the sensor changes due to the temperature change.

従来、この様な熱膨張係数の差の問題を解決すべく、セ
ンサペレットと基台との間をシリコンゴムにより接着
し、両者間の熱的歪の緩和を図ることも提案されている
が満足いくものではない。加えて、シリコンゴムはその
硬化時に収縮するのでその残留歪がダイアフラム部に影
響を与える。
Conventionally, in order to solve the problem of such difference in thermal expansion coefficient, it has been proposed to bond the sensor pellet and the base with silicon rubber to reduce the thermal strain between them, but it is also satisfactory. Not going. In addition, since the silicone rubber contracts when it cures, the residual strain affects the diaphragm portion.

先行技術として特開昭59-102131号公報に開示された発
明は、センサペレットと基台との間の接着材として、ゲ
ル状シリコーンを用いることで熱的歪の問題を劇的に解
決した。しかし、この場合ゲル状シリコーンは接着力が
比較的弱く従つて測定圧力印加時にセンサペレットを基
台からはがす方向の大きな力がダイアフラム部にかかつ
た場合、センサペレットと基台との間の接着状態が破壊
に至る危惧がある。これを防ぐためには基台上面にセン
サペレットをゲル状シリコーンで接着すると共に、更に
基台上面からセンサペレット上面にかけてゲル状シリコ
ーンで覆いつくさねばならず、それには大量のゲル状シ
リコーンを必要とし高価につく。
The invention disclosed in Japanese Patent Laid-Open No. 59-102131 as a prior art dramatically solves the problem of thermal strain by using gel silicone as an adhesive between the sensor pellet and the base. In this case, however, the adhesive force of the gel-like silicone is relatively weak.Therefore, when a large force in the direction of peeling the sensor pellet from the base is applied to the diaphragm when measuring pressure is applied, the adhesion between the sensor pellet and the base is large. There is a fear that the state will be destroyed. To prevent this, the sensor pellets must be bonded to the upper surface of the base with gel-like silicone and covered with the gel-like silicone from the upper surface of the base to the upper surface of the sensor pellet, which requires a large amount of gel-like silicone and is expensive. Stick to

(ハ)発明が解決しようとする問題点 本発明は、低価格にして、かつ熱的歪と接着力との問題
を解決しようとするものである。
(C) Problems to be Solved by the Invention The present invention is intended to solve the problems of thermal distortion and adhesive strength at low cost.

(ニ)問題点を解決するための手段 本発明はシリコン圧力センサペレットと基台との間の接
着材として、シリコン粉、アルミナ粉、シリカ粉の少く
とも一種類以上を混入したゴム樹脂を用いたことを特徴
とする。
(D) Means for Solving the Problems The present invention uses a rubber resin mixed with at least one of silicon powder, alumina powder, and silica powder as an adhesive between the silicon pressure sensor pellet and the base. It is characterized by having been.

(ヘ)作用 本発明に使用するゴム樹脂は、強い接着力を示すと共
に、単体のゴム樹脂よりもシリコンに近い熱膨張係数を
示し、かつ樹脂硬化時の収縮も少ない。
(F) Action The rubber resin used in the present invention has a strong adhesive force, a coefficient of thermal expansion closer to that of silicon than that of a single rubber resin, and less shrinkage during resin curing.

(ト)実施例 図面は、本発明実施例の圧力センサ(1)を示す。(G) Embodiment The drawings show a pressure sensor (1) according to an embodiment of the present invention.

このセンサ(1)は、基台(2)の上面にその孔(3)
を塞ぐ配置にて圧力センサのペレット(4)を装着し、
ペレット表面を被覆材(5)で覆つた後、圧力導入筒
(6a)を有するパッケージ(6)を基台(2)上面に気
密固着した構造をもつ。
This sensor (1) has a hole (3) on the upper surface of the base (2).
Mount the pressure sensor pellet (4) in a position to close the
After covering the pellet surface with a coating material (5), a package (6) having a pressure introducing cylinder (6a) is airtightly fixed to the upper surface of the base (2).

ペレット(4)はシリコンで形成され、約400μm厚さ
の環状周囲基部(4a)と、エッチングにより肉薄とされ
た約50μm厚さの円板状ダイアフラム部(4b)とからな
る。ダイアフラム部(4b)の表面にはピエゾ抵抗素子と
なる複数の拡散層(7)(7)…と、図には現われてい
ないが、これら拡散層より基部(4a)の上面にまで延び
る配線層が形成され、各配線層は基台(2)に植設した
リード(8)に金属細線(9)を介して電気的に連なつ
ている。
The pellet (4) is made of silicon and is composed of an annular peripheral base portion (4a) having a thickness of about 400 μm and a disk-shaped diaphragm portion (4b) having a thickness of about 50 μm thinned by etching. On the surface of the diaphragm part (4b) are a plurality of diffusion layers (7), (7) ... Which will be piezoresistive elements, and a wiring layer extending from these diffusion layers to the upper surface of the base part (4a), which is not shown in the figure. And each wiring layer is electrically connected to the lead (8) implanted in the base (2) through the thin metal wire (9).

本実施例の特徴として、ペレットの基部(4a)は、シリ
コン粉を混入したゴム樹脂からなる接着材(10)にて基
台(2)に装着されている。接着材(10)はゴム樹脂で
あるため接着力が強く(ゲル状シリコーンの約10倍)、
又シリコン粉を混入しているため、ペレット(4)を構
成するシリコンの熱膨張係数(3.4×10-6/℃)により
近いそれをもち、かつ樹脂硬化時の熱収縮が軽減され
る。
A feature of this embodiment is that the base (4a) of the pellet is attached to the base (2) with an adhesive (10) made of a rubber resin mixed with silicon powder. Since the adhesive material (10) is a rubber resin, the adhesive strength is strong (about 10 times that of gel-like silicone),
Further, since the silicon powder is mixed, it has a thermal expansion coefficient (3.4 × 10 −6 / ° C.) closer to that of the silicon constituting the pellet (4), and the thermal contraction during resin curing is reduced.

接着材(10)用のゴム樹脂としては、シリコンゴムが好
適であり、例えばトーレシリコーン(株)より市販され
ている品番JCR6121のものが使用され、又シリコン粉と
しては粒径50μm以下のものが重量比にて、(ゴム樹
脂):(シリコン粉)=2:0.8乃至2:1.2の範囲、好適に
は2:1の割合で混入される。この様な混入体は真空中に
て、よく脱泡した後、50μm程度の厚みで基台(2)上
に塗布され、ペレット(4)装着後、70℃、1時間の前
加熱及び90℃、2〜4時間の後加熱で硬化される。
Silicon rubber is suitable as the rubber resin for the adhesive material (10), for example, the product number JCR6121 commercially available from Toray Silicone Co., Ltd. is used, and the silicon powder having a particle size of 50 μm or less is used. In a weight ratio, (rubber resin) :( silicon powder) = 2: 0.8 to 2: 1.2, preferably 2: 1. Such contaminants are well degassed in a vacuum, and then applied on the base (2) with a thickness of about 50 μm, after mounting the pellets (4), 70 ° C, 1 hour preheating and 90 ° C. It is cured by heating after 2 to 4 hours.

基台(2)の材料には、鉄又はコバール等が用いられ
る。被覆材(5)としては、ダイアフラム部(4b)の表
面保護のために、例えばゲル状シリコーンを用いて良
く、この場合ゲル状シリコーンの使用量は極めて少なく
て済み、高価とならない。
Iron, Kovar, or the like is used as the material of the base (2). As the covering material (5), for example, gel silicone may be used for protecting the surface of the diaphragm portion (4b). In this case, the gel silicone is used in a very small amount and is not expensive.

尚、シリコン粉の他、アルミナ粉やシリカ粉を夫々単独
で、又は組合わせてゴム樹脂に混入されて良い。
In addition to silicon powder, alumina powder or silica powder may be mixed in the rubber resin individually or in combination.

(ト)発明の効果 本発明によれば、熱的歪や接着力不足を伴うことなく、
かつ安価にセンサペレットと基台との接着を行うことが
できる。
(G) Effect of the Invention According to the present invention, without causing thermal strain or insufficient adhesive force,
In addition, the sensor pellet and the base can be bonded at low cost.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明実施例の断面図であり、(2)は基台、
(4)はペレット、(10)は接着材である。
FIG. 1 is a sectional view of an embodiment of the present invention, (2) is a base,
(4) is a pellet and (10) is an adhesive.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】ダイアフラム部をもつシリコン圧力センサ
ペレットを、シリコン粉、アルミナ粉、シリカ粉の少な
くとも一種類以上を混入したゴム樹脂により、基台に接
着したことを特徴とする半導体圧力センサ。
1. A semiconductor pressure sensor characterized in that a silicon pressure sensor pellet having a diaphragm portion is bonded to a base with a rubber resin mixed with at least one kind of silicon powder, alumina powder and silica powder.
JP62066607A 1987-03-20 1987-03-20 Semiconductor pressure sensor Expired - Fee Related JPH071214B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62066607A JPH071214B2 (en) 1987-03-20 1987-03-20 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62066607A JPH071214B2 (en) 1987-03-20 1987-03-20 Semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPS63233342A JPS63233342A (en) 1988-09-29
JPH071214B2 true JPH071214B2 (en) 1995-01-11

Family

ID=13320756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62066607A Expired - Fee Related JPH071214B2 (en) 1987-03-20 1987-03-20 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPH071214B2 (en)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128309B2 (en) * 1973-07-09 1976-08-18
JPS5128309A (en) * 1974-09-02 1976-03-10 San Ando Shii Konsarutanto Kk SANDODOREENKOHONOKEESHINGUDONYUKOKUTSUSAKUSOCHI
JPS5826376B2 (en) * 1977-09-26 1983-06-02 東芝シリコ−ン株式会社 Organopolysiloxane composition that can be cured into a rubbery state
JPS5544778A (en) * 1978-09-27 1980-03-29 Hitachi Chem Co Ltd Package formation of semiconductor and the like
EP0033749B2 (en) * 1980-02-06 1987-11-11 Hans W. Dipl.-Phys. Keller Piezoresistive cylindrical-box-like pressure measurement cell
JPS5821131A (en) * 1981-07-29 1983-02-07 Toshiba Corp Semiconductor pressure sensor
JPS58219259A (en) * 1982-06-14 1983-12-20 Toray Silicone Co Ltd Heat-conductive silicone rubber composition
JPS59102131A (en) * 1982-12-03 1984-06-13 Sanyo Electric Co Ltd Semiconductor pressure sensor
JPS61157569A (en) * 1984-12-28 1986-07-17 Shin Etsu Polymer Co Ltd Thermally conductive adhesive composition

Also Published As

Publication number Publication date
JPS63233342A (en) 1988-09-29

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