JPH0712989B2 - Member having SiC-containing coating and method for forming SiC-containing coating - Google Patents
Member having SiC-containing coating and method for forming SiC-containing coatingInfo
- Publication number
- JPH0712989B2 JPH0712989B2 JP15099687A JP15099687A JPH0712989B2 JP H0712989 B2 JPH0712989 B2 JP H0712989B2 JP 15099687 A JP15099687 A JP 15099687A JP 15099687 A JP15099687 A JP 15099687A JP H0712989 B2 JPH0712989 B2 JP H0712989B2
- Authority
- JP
- Japan
- Prior art keywords
- sic
- coating
- silicon nitride
- base material
- source gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011248 coating agent Substances 0.000 title claims description 54
- 238000000576 coating method Methods 0.000 title claims description 54
- 238000000034 method Methods 0.000 title claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 29
- 229910052799 carbon Inorganic materials 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 7
- 238000001556 precipitation Methods 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 81
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 80
- 239000010410 layer Substances 0.000 description 19
- 239000002994 raw material Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 9
- 238000005336 cracking Methods 0.000 description 7
- 239000002131 composite material Substances 0.000 description 6
- 239000012808 vapor phase Substances 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明はSiC含有被膜を有する部材及びSiC含有被膜の形
成方法に係り、特に窒化珪素質基材とSiC含有被膜との
接着性を改良したSiC含有被膜を有する部材及びSiC含有
被膜の形成方法に関する。TECHNICAL FIELD The present invention relates to a member having a SiC-containing coating and a method for forming the SiC-containing coating, and in particular, to improving the adhesiveness between a silicon nitride base material and the SiC-containing coating. The present invention relates to a member having a SiC-containing coating and a method for forming the SiC-containing coating.
［従来の技術］ 近年、高温高強度材料として、窒化珪素、炭化珪素、サ
イアロン等の非酸化物セラミックス、あるいは酸化アル
ミニウム、酸化ジルコニウム等、いわゆるニューセラミ
ックスが急速にクローズアップされ、多くの研究や開発
がなされている。[Prior Art] In recent years, as high-temperature and high-strength materials, non-oxide ceramics such as silicon nitride, silicon carbide and sialon, or so-called new ceramics such as aluminum oxide and zirconium oxide have been rapidly focused on, and many researches and developments have been made. Has been done.
これらセラミックスのうち、炭化珪素（以下「SiC」と
略記する。）は、 軽い材料である。Among these ceramics, silicon carbide (hereinafter abbreviated as “SiC”) is a light material.
常温から高温まで機械的強度が高く安定している。High mechanical strength and stability from room temperature to high temperature.
熱膨張が小さく熱伝導性が良いため耐スポーリング性
に優れる。Excellent in spalling resistance due to small thermal expansion and good thermal conductivity.
耐食性が極めて大きい。Extremely high corrosion resistance.
硬度が高く、耐摩耗性に優れる。High hardness and excellent wear resistance.
導電性があり電気素子としても使用できる。It has conductivity and can be used as an electric element.
などの特徴を有し、極めて重要な工業材料として注目さ
れている。It has characteristics such as the following, and is attracting attention as an extremely important industrial material.
とりわけ、CVD法等の気相法によって製造されるSiCは、
緻密で高純度であることから、これらの特性が著しく高
いため、気相法SiC膜で被覆することにより、各種部材
の特性を改良する方法が従来より提案されている。Above all, SiC produced by a vapor phase method such as a CVD method is
Since these properties are remarkably high because they are dense and highly pure, a method for improving the properties of various members by coating with a vapor-phase method SiC film has been conventionally proposed.
［発明が解決しようとする問題点］ しかしながら、基材表面に気相法により高純度SiC被膜
を形成した場合、基材と膜との熱膨張係数の差が大きい
場合には、膜剥離や亀裂発生の問題がある。[Problems to be Solved by the Invention] However, when a high-purity SiC film is formed on the surface of a base material by a vapor phase method, when there is a large difference in thermal expansion coefficient between the base material and the film, film peeling or cracking occurs. There is a problem of occurrence.
このため、従来においては、SiC被膜を形成することの
できる材料は、等方性炭素か焼結SiCに限られており、
例えば高温高強度材料として、高温ガスタービン用翼材
料等に用いられている窒化珪素（Si3N4）焼結体等に、
剥離や亀裂の問題なく、SiC被膜を形成することはでき
なかった。Therefore, conventionally, the material that can form the SiC film is limited to isotropic carbon or sintered SiC,
For example, as a high-temperature and high-strength material, for silicon nitride (Si 3 N 4 ) sintered bodies used for high-temperature gas turbine blade materials, etc.,
It was not possible to form a SiC film without problems of peeling and cracking.
［問題点を解決するための手段］ 本発明は、窒化珪素焼結体等の窒化珪素質基材表面に、
SiC被膜を形成した場合に起こる膜剥離や亀裂発生の問
題を解決するものであって、 窒化珪素質基材上にSiCとSiとを含む被膜が形成されて
いることを特徴とするSiC含有被膜を有する部材、 及び 窒化珪素質基材上に珪素原料ガスと炭素原料ガスとを流
してSiCを析出させるに際し、初期には珪素原料ガスの
みもしくは少量の炭素原料ガスを含む珪素原料ガスを流
してSiのみ又は少量のSiCを含むSi層を析出させ、その
後順次炭素原料ガスの割合を増加させてSiCの析出割合
を増加させてゆくことを特徴とするSiC被膜の形成方
法、 を要旨とするものである。[Means for Solving Problems] The present invention provides a surface of a silicon nitride based material such as a silicon nitride sintered body,
A SiC-containing coating, which solves the problems of film peeling and cracking that occur when a SiC coating is formed, characterized in that a coating containing SiC and Si is formed on a silicon nitride substrate. When depositing SiC by flowing a silicon source gas and a carbon source gas on a member having a silicon nitride base material and initially depositing SiC, a silicon source gas containing only a small amount of the silicon source gas or a small amount of the carbon source gas is supplied. A method for forming a SiC coating, characterized in that a Si layer containing only Si or a small amount of SiC is deposited, and then the proportion of the carbon source gas is sequentially increased to increase the SiC deposition rate. Is.
なお、本発明において、窒化珪素質基材としては、窒化
珪素焼結体又は窒化珪素を多く含む焼結体等が挙げられ
る。In the present invention, examples of the silicon nitride base material include a silicon nitride sintered body or a sintered body containing a large amount of silicon nitride.
［作用］ 本発明の部材のSiC含有被膜は、SiCとSiとを含むため、
被膜と窒化珪素質基材との熱膨張係数の差が小さくな
り、熱膨張係数の差に起因する膜剥離や亀裂発生の問題
が解決される。しかもSiC含有被膜により、基材は有効
に保護される。[Operation] Since the SiC-containing coating of the member of the present invention contains SiC and Si,
The difference in coefficient of thermal expansion between the coating and the silicon nitride base material becomes small, and the problem of film peeling or cracking due to the difference in coefficient of thermal expansion is solved. Moreover, the SiC-containing coating effectively protects the substrate.
特に、SiCとSiとを含み、窒化珪素質基材表面から離隔
するに従って該被膜中のSiC含有量が高められ、被膜表
面はSiCのみからなる被膜とした場合には、表面は高特
性のSiCであるが、窒化珪素質基材はSiCと直接接触せず
Si或いはSi及び少量のSiCよりなる複合層と接触する。
このため、窒化珪素質基材と被膜との間の熱膨張係数の
差は小さいものとなる。そして、被膜の熱膨張率は、窒
化珪素質基材接触面側から、その厚さ方向に次第にSiC
の熱膨張率に近づくため、熱膨張係数の差に起因する膜
剥離や亀裂発生の問題が解消され、しかも被膜表面はSi
Cのみからなる層とされるため、極めて高特性の部材と
なる。In particular, the content of SiC in the coating is increased as it is separated from the surface of the silicon nitride base material containing SiC and Si, and when the coating surface is a coating composed only of SiC, the surface has high characteristic SiC. However, the silicon nitride substrate does not come into direct contact with SiC.
Contact with Si or a composite layer consisting of Si and a small amount of SiC.
Therefore, the difference in the coefficient of thermal expansion between the silicon nitride base material and the coating becomes small. The coefficient of thermal expansion of the coating gradually increases from the silicon nitride-based substrate contact surface side in the thickness direction to SiC.
Since it is close to the coefficient of thermal expansion, the problem of film peeling and cracking due to the difference in coefficient of thermal expansion is solved, and the film surface is
Since it is a layer consisting only of C, it is a member with extremely high characteristics.
しかして、このようにSiC含有率が厚さ方向で変化するS
iCとSiとを含む被膜は、本発明の方法に従って、窒化珪
素質基材上に珪素原料ガスと炭素原料ガスとを流してSi
Cを析出させるに際し、初期には珪素原料ガスのみもし
くは少量の炭素原料ガスを含む珪素原料ガスを流してSi
のみ又は少量のSiCを含むSi層を析出させ、その後順次
炭素原料ガスの割合を増加させてSiCの析出割合を増加
させることにより容易に形成される。このような気相法
によれば、SiとSiCが極めて均一に分散した層を析出さ
せることが可能であるので、被膜内部のSi−SiC複合層
の形成に有利である。Thus, in this way the SiC content changes in the thickness direction
According to the method of the present invention, a film containing iC and Si is formed by flowing a silicon raw material gas and a carbon raw material gas onto a silicon nitride substrate.
When precipitating C, the silicon raw material gas is initially supplied or a silicon raw material gas containing a small amount of carbon raw material gas is caused to flow to produce Si.
It is easily formed by depositing a Si layer containing only or a small amount of SiC, and then sequentially increasing the proportion of carbon source gas to increase the proportion of SiC deposited. According to such a vapor phase method, it is possible to deposit a layer in which Si and SiC are extremely uniformly dispersed, which is advantageous for forming a Si-SiC composite layer inside the coating film.
［実施例］ 以下に図面を参照して本発明の実施例を詳細に説明す
る。Embodiments Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明の実施例に係るSiC含有被膜を有する部
材の部分断面図である。図示の如く、本実施例のSiC含
有被膜を有する部材は、窒化珪素質基材１上にSiCとSi
とを含む被膜２が形成された部材であって、窒化珪素質
基材１表面から離隔するに従って該被膜中のSiC含有量
が高められ、被膜表面はSiCのみからなるものである。FIG. 1 is a partial sectional view of a member having a SiC-containing coating according to an embodiment of the present invention. As shown in the figure, the member having the SiC-containing coating of the present embodiment has SiC and Si on the silicon nitride base material 1.
A member on which a coating film 2 containing and is formed is formed, and the SiC content in the coating film is increased with increasing distance from the surface of the silicon nitride substrate 1, and the coating surface is composed of only SiC.
即ち、本実施例に係る被膜２は、その厚さd0に対する被
膜中のある点の窒化珪素質基材１からの距離ｄの比、即
ち、d/d0が１に近づくに従って、被膜中のSiCの含有比
（モル％）が100に近づき、最終的にSiCの被膜表面を提
供するものである。That is, the coating film 2 according to this example has a ratio of the distance d from the silicon nitride base material 1 at a certain point in the coating film to its thickness d 0 , that is, as d / d 0 approaches 1, The SiC content ratio (mol%) approaches 100 and finally provides the SiC coating surface.
このSiC含有比のd/d0に対する増加割合には特に制限は
なく、第２図の如く、比例的に増加するもの、あるい
は、のような増加曲線をたどるものであっても良
い。The rate of increase of the SiC content ratio with respect to d / d 0 is not particularly limited, and may be one that increases proportionally as shown in FIG. 2 or one that follows such an increase curve.
また、被膜２の窒化珪素質基材１と接触する面、即ち、
d/d0＝０の部分における層は、Si単独層であっても、少
量のSiCを含むSiとSiCとの複合層であっても良い。更
に、被膜２の表面のSiCよりなる層は、ある程度の厚み
を有するものであっても良い。従って、第３図〜に
示すようなd/d0に対するSiC含有比の増加直線あるいは
これに類似した増加の曲線をたどるものであっても良
い。In addition, the surface of the coating film 2 in contact with the silicon nitride base material 1, that is,
The layer in the part of d / d 0 = 0 may be a Si single layer or a composite layer of Si and SiC containing a small amount of SiC. Further, the layer of SiC on the surface of the coating film 2 may have a certain thickness. Therefore, it may follow an increasing straight line of the SiC content ratio with respect to d / d 0 as shown in FIG. 3 or a similar increasing curve.
このような本実施例に係るSiC被膜は、本発明の方法に
従って、窒化珪素質基材上に珪素原料ガスと炭素原料ガ
スとを流してSiCを析出させるに際し、初期には珪素原
料ガスのみもしくは少量の炭素原料ガスを含む珪素原料
ガスを流してSiのみ又は少量のSiCを含むSi層を析出さ
せ、その後順次炭素原料ガスの割合を増加させてSiCの
析出割合を増加させ、終期にはSiCのみを析出させるこ
とにより、容易かつ効率的に形成することができる。According to the method of the present invention, when the SiC raw material gas and the carbon raw material gas are caused to flow over the silicon nitride base material to deposit SiC according to the method of the present invention, only the silicon raw material gas is initially used or A silicon raw material gas containing a small amount of carbon raw material gas is flowed to deposit a Si layer containing only Si or a small amount of SiC, and then the proportion of the carbon raw material gas is sequentially increased to increase the SiC deposition rate. It can be easily and efficiently formed by precipitating only one.
例えば、窒化珪素質基材の少なくとも被膜形成部をCVD
反応温度域、例えば1050〜1250℃に加熱し、CVD原料ガ
スとして初期にH2／SiCl4を流し、 SiCl4＋2H2→Si＋4HCl の反応によりSi層を所望の厚さに形成し、次にこの原料
ガスにC3H8を混入してゆき、順次C3H8の割合を増し、Si
C含有率が次第に増加するSiとSiCとの複合層を所望の厚
さに形成し、最終的にガス組成をSiCl4／C3H8として所
望厚さのSiC層を形成する。For example, at least the film formation part of the silicon nitride substrate is CVD
After heating to a reaction temperature range, for example, 1050-1250 ℃, H 2 / SiCl 4 is made to flow initially as a CVD source gas, and a Si layer is formed to a desired thickness by the reaction of SiCl 4 + 2H 2 → Si + 4HCl. C 3 H 8 is mixed into the raw material gas, and the proportion of C 3 H 8 is gradually increased to produce Si.
A composite layer of Si and SiC in which the C content gradually increases is formed to a desired thickness, and finally a SiC layer having a desired thickness is formed with a gas composition of SiCl 4 / C 3 H 8 .
このような気相反応によれば、Si層とSiC層との間に析
出するSiCとSiとの複合層は、SiCとSiとが極めて均一に
分散したものとなり、優れた膜特性が得られる。珪素原
料ガス及び炭素原料ガスとしては、上記以外の各種のも
のを用い得ることは言うまでもない。According to such a gas phase reaction, the composite layer of SiC and Si deposited between the Si layer and the SiC layer is a uniform dispersion of SiC and Si, and excellent film characteristics can be obtained. . It goes without saying that various kinds of silicon source gas and carbon source gas other than the above can be used.
なお、第１図〜第３図に示す例は、本発明の一実施例で
あって、本発明は何ら、図示のものに限定されるもので
はない。The example shown in FIGS. 1 to 3 is one embodiment of the present invention, and the present invention is not limited to the illustrated one.
例えば、窒化珪素質基材上に形成されるSiC含有被膜
は、SiCとSiとを含有するものであれば良く、その厚さ
方向において、SiC含有量は均一であっても良い。この
場合、窒化珪素質基材と被膜との熱膨張係数の差を緩和
する点から、被膜中のSi含有量は５重量％以上であるこ
とが好ましい。For example, the SiC-containing coating formed on the silicon nitride base material may be one containing SiC and Si, and the SiC content may be uniform in the thickness direction. In this case, the Si content in the coating is preferably 5% by weight or more from the viewpoint of relaxing the difference in thermal expansion coefficient between the silicon nitride base material and the coating.
本発明は、焼結窒化珪素のガスタービン翼等に適用する
ことにより、その耐熱性、耐酸化性、機械的強度を向上
させ、耐久性を著しく高めることができる。INDUSTRIAL APPLICABILITY By applying the present invention to a sintered silicon nitride gas turbine blade or the like, its heat resistance, oxidation resistance and mechanical strength can be improved and durability can be remarkably enhanced.
［発明の効果］ 以上詳述した通り、本発明のSiC含有被膜を有する部材
は、SiCを含有する被膜で被覆されているため、SiCによ
る優れた耐食性、耐摩耗性を有し、また、被膜中にSiを
含むため、基材と被膜との熱膨張差が緩和され、膜剥離
や亀裂発生が防止される。[Effects of the Invention] As described in detail above, since the member having the SiC-containing coating of the present invention is coated with the coating containing SiC, it has excellent corrosion resistance and wear resistance due to SiC, and Since Si is contained therein, the difference in thermal expansion between the base material and the coating film is relaxed, and film peeling and cracking are prevented.
特に、本発明において、窒化珪素質基材表面から離隔す
るに従って、SiC含有量が高められ、表面はSiCのみから
なる被膜を形成した場合には、 表面はSiC層であるため、SiCの優れた耐食性、耐摩耗
性を有する。In particular, in the present invention, as the SiC content is increased as the surface is separated from the surface of the silicon nitride base material, and when the surface is formed with a coating film made of only SiC, the surface is a SiC layer, so that the excellent SiC Has corrosion resistance and wear resistance.
被膜の基材接触面側はSi又はSiCを少量含むSiとSiCの
複合層であるため、基材と被膜との熱膨張差が緩和され
る。Since the base material contact surface side of the coating is a composite layer of Si or SiC containing a small amount of Si or SiC, the difference in thermal expansion between the base material and the coating is relaxed.
基材表面から離隔するに従って被膜中のSiC含有量が
高められ、被膜表面はSiCのみからなるようにされてい
るため、被膜中において大きな熱膨張差が生じることは
ない。Since the SiC content in the coating increases as the distance from the substrate surface increases, and the coating surface is made of only SiC, a large thermal expansion difference does not occur in the coating.
等の効果が奏され、高特性SiC被膜を窒化珪素質基材表
面に膜剥離や亀裂発生の問題をおこすことなく形成した
部材が提供される。It is possible to provide a member in which a high-performance SiC film is formed on the surface of a silicon nitride substrate without causing problems such as film peeling and cracking.
しかして、このようなSiC含有被膜は、窒化珪素質基材
上に珪素原料ガスと炭素原料ガスとを流してSiCを析出
させるに際し、初期には珪素原料ガスのみもしくは少量
の炭素原料ガスを含む珪素原料ガスを流してSiのみ又は
少量のSiCを含むSi層を析出させ、その後順次炭素原料
ガスの割合を増加させてSiCの析出割合を増加させ、終
期にはSiCのみを析出させる本発明の方法により、容易
かつ効率的に形成される。Thus, such a SiC-containing film initially contains only a silicon raw material gas or a small amount of a carbon raw material gas when flowing a silicon raw material gas and a carbon raw material gas onto a silicon nitride base material to deposit SiC. A silicon raw material gas is flowed to deposit a Si layer containing only Si or a small amount of SiC, and then the proportion of the carbon raw material gas is sequentially increased to increase the deposition rate of SiC, and only SiC is deposited at the end. It is easily and efficiently formed by the method.
第１図は本発明のSiC含有被膜を有する部材の部分断面
図、第２図及び第３図は本発明のSiC含有被膜を有する
部材の被膜厚み方向のSiC含有比の変化の例を示すグラ
フである。 １…窒化珪素質基材、２…被膜。FIG. 1 is a partial cross-sectional view of a member having a SiC-containing coating of the present invention, and FIGS. 2 and 3 are graphs showing examples of changes in the SiC content ratio in the thickness direction of a member having a SiC-containing coating of the present invention. Is. 1 ... Silicon nitride base material, 2 ... Coating film.
Claims (4)
が形成されていることを特徴とするSiC含有被膜を有す
る部材。1. A member having a SiC-containing coating, characterized in that a coating containing SiC and Si is formed on a silicon nitride base material.
該被膜中のSiC含有量が高められ、被膜表面はSiCのみか
らなることを特徴とする特許請求の範囲第１項に記載の
SiC含有被膜を有する部材。2. The content of SiC in the coating is increased with increasing distance from the surface of the silicon nitride base material, and the coating surface is composed of only SiC.
A member having a SiC-containing coating.
とを特徴とする特許請求の範囲第１項又は第２項に記載
のSiC含有被膜を有する部材。3. A member having a SiC-containing coating according to claim 1 or 2, wherein the Si content in the coating is 5% by weight or more.
料ガスとを流してSiCを析出させるに際し、初期には珪
素原料ガスのみもしくは少量の炭素原料ガスを含む珪素
原料ガスを流してSiのみ又は少量のSiCを含むSi層を析
出させ、その後順次炭素原料ガスの割合を増加させてSi
Cの析出割合を増加させてゆくことを特徴とするSiC被膜
の形成方法。4. When depositing SiC by flowing a silicon source gas and a carbon source gas onto a silicon nitride base material, initially supplying a silicon source gas alone or a silicon source gas containing a small amount of the carbon source gas. A Si layer containing only Si or a small amount of SiC is deposited, and then the ratio of the carbon source gas is sequentially increased to produce Si.
A method for forming a SiC coating, characterized by increasing the precipitation rate of C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15099687A JPH0712989B2 (en) | 1987-06-17 | 1987-06-17 | Member having SiC-containing coating and method for forming SiC-containing coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15099687A JPH0712989B2 (en) | 1987-06-17 | 1987-06-17 | Member having SiC-containing coating and method for forming SiC-containing coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63315584A JPS63315584A (en) | 1988-12-23 |
| JPH0712989B2 true JPH0712989B2 (en) | 1995-02-15 |
Family
ID=15509003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15099687A Expired - Lifetime JPH0712989B2 (en) | 1987-06-17 | 1987-06-17 | Member having SiC-containing coating and method for forming SiC-containing coating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0712989B2 (en) |
-
1987
- 1987-06-17 JP JP15099687A patent/JPH0712989B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63315584A (en) | 1988-12-23 |
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