JPH0713602B2 - Thick film gas sensor element - Google Patents
Thick film gas sensor elementInfo
- Publication number
- JPH0713602B2 JPH0713602B2 JP6117386A JP6117386A JPH0713602B2 JP H0713602 B2 JPH0713602 B2 JP H0713602B2 JP 6117386 A JP6117386 A JP 6117386A JP 6117386 A JP6117386 A JP 6117386A JP H0713602 B2 JPH0713602 B2 JP H0713602B2
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- Prior art keywords
- metal catalyst
- thick film
- ceramic
- gas
- electrode
- Prior art date
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Description
【発明の詳細な説明】 (産業上の利用分野) 酸素センサ、その他ガスセンサとして有用な、厚膜式ガ
ス感応体素子のとくに表面層における金属触媒の劣化に
由来する性能の変調、たとえば自動車用の3元触媒用フ
ィードバックコントロールにおける制御空燃比点の耐久
試験後におけるリーン側へのシフトを来す欠点について
の有利な回避を目指して開発した、厚膜式ガス感応体素
子を提案しようとするものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) Modulation of performance resulting from deterioration of a metal catalyst of a thick film type gas sensitive element, particularly in a surface layer, useful as an oxygen sensor and other gas sensors, for example, for automobiles. The purpose of this invention is to propose a thick film type gas sensitive element, which was developed aiming at an advantageous avoidance of the drawback of shifting the control air-fuel ratio point to the lean side after the endurance test in the feedback control for three-way catalyst. is there.
(従来の技術) 厚膜式ガス感応体素子については、さきにチタニア厚膜
中に5〜30モル%の白金族元素の金属触媒を分散存在さ
せることに関連して特開昭60−158346号公報に開示した
ところであるがその後の研究の進展により、表面層付近
の金属触媒が、このガス感応体素子を使った自動車用の
3元触媒用フィードバックコントロールにおいて、制御
空燃比点に影響を与えること、すなわち、耐久試験のあ
と制御空燃比点がリーン側にシフトする欠点が、とくに
表面層付近における金属触媒の劣化に基因していること
が明らかになった。(Prior Art) Japanese Patent Application Laid-Open No. 60-158346 relates to a thick film type gas sensitive element in relation to the presence of 5 to 30 mol% of a platinum group metal catalyst dispersed in a titania thick film. As disclosed in the official gazette, the metal catalyst near the surface layer has an influence on the control air-fuel ratio point in the feedback control for the three-way catalyst for automobiles using this gas sensitive element, due to the progress of subsequent research. That is, it has been clarified that the defect that the controlled air-fuel ratio point shifts to the lean side after the durability test is due to the deterioration of the metal catalyst particularly near the surface layer.
ところで特開昭53-11226号、同53−130093号、同54-485
96号及び同56−106147号各公報には、とくにペレット状
の感ガス素子に関しとくに最後にあげた公報では、表面
層の触媒量を電極間に比し、より少くすることにより、
耐久性の向上を図ることが開示されている。しかしこの
場合上記のリーンシフトの抑制には寄与し得る反面、表
面層付近の触媒の使用中における劣化そのものを防止す
ることはできず、さらにこの触媒が、排ガスから素子へ
の被毒物質(Pb,Pなど)をトラップすべき機能に関し
て、触媒量の減少は明らかに望ましくない。By the way, JP-A-53-11226, 53-130093, and 54-485
No. 96 and No. 56-106147, in particular, in the last-mentioned publication relating to a pellet-shaped gas-sensitive element, by comparing the amount of catalyst in the surface layer between electrodes, by making it smaller,
It is disclosed to improve the durability. However, in this case, while it can contribute to the suppression of the lean shift, it cannot prevent deterioration itself of the catalyst in the vicinity of the surface layer during use. , P, etc.), the reduction of the amount of catalyst is obviously not desirable for the function of trapping.
(発明が解決しようとする問題点) 上掲特開昭60−158346号公報に開示した、厚膜式ガス感
応素子について、エミッションの耐久供用中におけるシ
フトが金属触媒の変質に起因して生じること、またこの
変質が排ガス雰囲気中の特定成分の吸着に主として依存
するためこの雰囲気による影響を最小にすること、かく
して厚膜式ガス感応体素子の耐久性を改善することなど
についての改良を図るのがこの発明の目的である。(Problems to be Solved by the Invention) With respect to the thick film type gas sensitive element disclosed in Japanese Patent Laid-Open No. 60-158346, a shift occurs during durable service of emission due to alteration of metal catalyst. Moreover, since the alteration mainly depends on the adsorption of a specific component in the exhaust gas atmosphere, the influence of this atmosphere is minimized, and thus, the improvement of the durability of the thick film type gas sensitive element is attempted. Is the object of this invention.
(問題点を解決するための手段) 上記の厚膜式ガス感応体素子のガス感応体膜について
は、多層となし得ることを活用してこの発明は、 セラミック基板上に配設した1対の電極を覆うセラミッ
ク半導体と金属触媒よりなるガス感応体厚膜にして、 厚膜を多層化し少くとも電極近辺層にはRhを含みかつ該
電極近辺層のRhの濃度を他の層よりも高めた ことを特徴とする、厚膜式ガス感応体素子である。(Means for Solving the Problems) With respect to the gas sensitive film of the thick film type gas sensitive element described above, the present invention utilizes a fact that it can be formed in multiple layers. A thick film of a gas sensitive material consisting of a ceramic semiconductor and a metal catalyst covering the electrode was formed, and the thick film was multilayered so that at least the layer near the electrode contained Rh and the concentration of Rh in the layer near the electrode was higher than other layers. A thick film type gas sensitive element.
ここに多層化したガス感応体厚膜の表面層中の金属触媒
が、Ptのみ又はPtとRhの分散からなり、電極近辺層中の
金属触媒がRhとPtの分散又はRhとPdの分散からなるこ
と、 また同じく表面層中を占める金属触媒中にはRhを含まな
いか又は含んでもセラミック半導体に対し0.2モル%以
下で含み、電極近辺層に存在する金属触媒中にはRhを0.
2モル%をこえ3モル%以下で含むこと、 また表面層中を占める金属触媒が電極近辺層に存在する
金属触媒に比しより粒径の大きいものであること、 さらに表面層中を占める金属触媒が、粒径0.5μm以下
のPtであり、電極近辺層に存在する金属触媒が粒径0.5
μm未満でセラミック半導体に対し0.2モル%をこえ3
モル%以下に当るRh又はその合金を含むものであるこ
と、 そしてガス感応体厚膜が、金属塩溶液のセラミック半導
体ペースト焼成層への含浸、熱分解による、金属触媒の
分散に成るセラミック半導体の積層構造であること、 そのほかガス感応体厚膜が、セラミック半導体ペースト
中への金属触媒粉末の混入、焼成による、金属触媒の分
散に成るセラミック半導体の積層構造であること、 またガス感応体厚膜が、金属塩溶液のセラミック半導体
ペースト焼成層への含浸、熱分解による、金属触媒の分
散に成るセラミック半導体と、セラミック半導体ペース
ト中への金属触媒粉末の混入焼成による金属触媒の分散
になるセラミック半導体との積層構造であること が何れも実施態様として推奨される。The metal catalyst in the surface layer of the gas-sensitized thick film multilayered here consists of only Pt or a dispersion of Pt and Rh, and the metal catalyst in the layer near the electrode is a dispersion of Rh and Pt or a dispersion of Rh and Pd. Also, similarly, the metal catalyst occupying the surface layer does not contain Rh or contains Rh in an amount of 0.2 mol% or less with respect to the ceramic semiconductor even if it contains Rh in the metal catalyst present in the layer near the electrode.
Containing 2 mol% or more and 3 mol% or less, and that the metal catalyst occupying the surface layer has a larger particle size than the metal catalyst existing in the layer near the electrode, and the metal occupying the surface layer The catalyst is Pt with a particle size of 0.5 μm or less, and the metal catalyst existing in the layer near the electrode has a particle size of 0.5.
If it is less than μm, it exceeds 0.2 mol% to the ceramic semiconductor. 3
Containing less than or equal to mol% of Rh or its alloy, and the gas sensitive material thick film is a ceramic semiconductor laminated structure in which a metal salt solution is impregnated in a ceramic semiconductor paste firing layer and the metal catalyst is dispersed by thermal decomposition. In addition, the gas sensitive material thick film has a laminated structure of ceramic semiconductors in which the metal catalyst is dispersed by mixing the metal catalyst powder into the ceramic semiconductor paste and firing, and the gas sensitive material thick film is A ceramic semiconductor in which a metal salt solution is dispersed in a ceramic semiconductor paste by impregnation of a ceramic semiconductor paste firing layer and thermal decomposition, and a ceramic semiconductor in which a metal catalyst powder is mixed and burned in a ceramic semiconductor paste to be dispersed in a metal catalyst. A laminated structure is recommended as an embodiment.
ここで上記グリーンセラミック基板としては、通常用い
られるセラミック、例えばアルミナ、ベリリア、ムライ
ト、ステアタイトなどを主成分とし、薄板として焼成す
ることのできるセラミック材料が挙げられる。Examples of the green ceramic substrate include ceramic materials that are commonly used, such as alumina, beryllia, mullite, and steatite as main components, and can be fired as a thin plate.
また、電極としては、セラミック基板を焼成する際に充
分耐え得る導電体材料であればよいが、通常、金または
白金族元素を主成分としたものなかでも白金はそのまま
電気回路として用いることができ好ましい。The electrodes may be any conductive material that can sufficiently withstand the firing of the ceramic substrate, but usually, platinum, which contains gold or a platinum group element as a main component, can be directly used as an electric circuit. preferable.
次にガス感応体厚膜はSnO2,TiO2,CoO,ZnO,Nb2O5,Cr2O3
などの金属酸化物から選んだセラミック半導体を用いれ
ばよいが、耐熱性の点からSnO2,TiO2が好ましく、とく
にTiO2を用いることが望ましい。Next, the thick film of the gas sensitizer was SnO 2 , TiO 2 , CoO, ZnO, Nb 2 O 5 , Cr 2 O 3
May be used ceramic semiconductor chosen from metal oxides such as but, SnO 2, TiO 2 is preferred from the viewpoint of heat resistance, in particular it is desirable to use TiO 2.
ガス感応体厚膜は0.2〜30モル%の白金族元素を含み、1
00〜500μmの厚みで適合する。The gas sensitive thick film contains 0.2 to 30 mol% of platinum group element,
Suitable for a thickness of 00 to 500 μm.
こゝで触媒として代表的なPtを使用すると優れた感ガス
特性を示すが、高温の排ガス中で長時間使用する場合
は、Ptが蒸発し耐久劣化をしやすい。When typical Pt is used as a catalyst here, it exhibits excellent gas-sensing properties, but when used for a long time in high-temperature exhaust gas, Pt evaporates and durability deterioration easily occurs.
PtのかわりにRh又はRh−Pt,Rh−Pd合金を使用すると、R
hの耐熱性により耐久劣化を大巾に改善できた。If Rh or Rh-Pt, Rh-Pd alloy is used instead of Pt, R
Due to the heat resistance of h, durability deterioration could be greatly improved.
しかしRhを全素子域全体に使用すると、Rhが酸化雰囲気
中では酸化しやすいために、一定の雰囲気中に長時間放
置したりすると、Rhの性質が変わり、Rhの酸化−還元速
度が感ガス素子の応答へ影響を及ぼすようになり、この
素子を使用した排ガス制御システムの制御ポイントをず
らすことになる。However, when Rh is used in the entire element area, Rh is easily oxidized in an oxidizing atmosphere.Therefore, if it is left in a certain atmosphere for a long time, the properties of Rh change, and the rate of oxidation-reduction of Rh is gas-sensitive. This will affect the response of the device and shift the control point of the exhaust gas control system using this device.
しかし厚膜素子の場合、感ガス性の中心は素子表面では
なく、むしろ電極近傍が支配的であることを発明者らは
見出したので、厚膜を多層化し電極近傍にのみRh濃度を
高めることにより、Rhの雰囲気不安定性を最小にして、
素子の耐熱性を高め、耐久性の良い感ガス素子を作るこ
とができた。ここで多層化したガス感応体厚膜の表面層
でのRh濃度は、0.2モル%以下(0モル%を含む)であ
り、0.2モル%をこえると感ガス素子特性の雰囲気依存
性が大きく、且つ素子の応答性を悪くする。However, in the case of a thick film element, the inventors have found that the center of gas sensitivity is not the element surface, but rather the electrode vicinity, so the thick film should be multilayered to increase the Rh concentration only in the electrode vicinity. To minimize the instability of Rh atmosphere,
The heat resistance of the element was improved, and a gas-sensitive element with good durability could be manufactured. The Rh concentration in the surface layer of the multi-layered gas sensitive material film is 0.2 mol% or less (including 0 mol%), and if it exceeds 0.2 mol%, the gas-sensitive element characteristics greatly depend on the atmosphere. In addition, the response of the device is deteriorated.
一方電極近辺層ではRh濃度は0.2モル%をこえ3モル%
以下が望ましく、0.2モル%以下では、高温で使用した
場合の耐久性が不足し、3モル%をこえるとガス感応体
素子の応答性が、劣化する。On the other hand, in the layer near the electrode, the Rh concentration exceeds 0.2 mol% and exceeds 3 mol%
The following is desirable, and if it is 0.2 mol% or less, the durability when used at high temperature is insufficient, and if it exceeds 3 mol%, the responsiveness of the gas sensitive element is deteriorated.
Rh以外の触媒では、通常で使われるPt,Pdが補助触媒と
して単独又はRhとの合金によって使用されるが、全体と
して30モル%以下であることが必要でありそれ以上では
ガス感応体素子の応答性が劣化する。In catalysts other than Rh, Pt and Pd that are usually used are used alone or as an alloy with Rh as a co-catalyst, but it is necessary that the total amount is 30 mol% or less, and if it is more than that, the gas sensitive element Responsiveness deteriorates.
表面層と電極近辺層の厚みは、実使用の用途に応じて使
いわけるべきであるが、制御空燃比の耐久中の安定性、
感ガス性の安定性から各々50μm以上全体で100〜500μ
mが望ましく、100μm未満では耐久性が不充分であ
り、500μmをこえると、素子の応答性が悪くなり、使
用条件によっては、基板と素子膜との熱膨脹差による熱
応力により、膜がはがれやすくなる。The thickness of the surface layer and the layer near the electrode should be selected according to the actual application, but the stability of the controlled air-fuel ratio during durability,
100-500μ in total over 50μm due to gas-sensitive stability
m is desirable, the durability is insufficient when it is less than 100 μm, and the response of the device is deteriorated when it exceeds 500 μm, and the film is easily peeled off due to the thermal stress due to the difference in thermal expansion between the substrate and the device film depending on the use conditions. Become.
一方表面層の触媒は、排ガス中の被毒物質をトラップす
る性質がある為、被毒の可能性の用途にはPtをある程
度、表面層に添加しておくと良い。このとき、表面のPt
が使用中に変質すると、感ガス特性に影響を与え、排ガ
ス制御点をリーン側(希薄側)へシフトさせる、これを
防止する為には、表面層中には、粒径が電極近辺層より
大きい望ましくは0.5μm以上のPtを主体とすることに
より、このシフトを最小にすることができる。0.5μm
以下の触媒は、使用中に蒸発しやすく凝縮する為に触媒
特性が変化し、これが感ガス特性のシフトとして作用す
るためである。0.5μm以上のものを使うことにより、
始めから特性を前記使用后の条件にずらせておき、以降
の使用時には変化が少ない安定した製品を得ることがで
きた。On the other hand, the catalyst of the surface layer has a property of trapping poisoning substances in the exhaust gas, so that Pt may be added to the surface layer to some extent for the purpose of potentially poisoning. At this time, the Pt of the surface
If it deteriorates during use, it will affect the gas sensitivity characteristics and shift the exhaust gas control point to the lean side (lean side) .To prevent this, in the surface layer, the particle size is smaller than that in the layer near the electrode. This shift can be minimized by making Pt large, preferably 0.5 μm or more, as a main component. 0.5 μm
This is because the following catalysts change their catalytic properties because they are easily vaporized and condensed during use, and this acts as a shift of the gas-sensitive properties. By using 0.5 μm or more,
The characteristics were shifted from the beginning to the conditions after the above use, and a stable product with little change was able to be obtained in the subsequent use.
金属触媒の添加方法としては金属触媒粉末の添加法と、
金属塩溶液を含浸させその後熱分解させ金属を析出させ
る含浸法とがあるが、電極近傍の金属触媒は感ガス性を
高めるために微細な触媒が望ましく、このためには含浸
法の方が適している。As a method of adding a metal catalyst, a method of adding a metal catalyst powder,
There is an impregnation method in which a metal salt solution is impregnated and then thermally decomposed to precipitate a metal, but a fine catalyst is desirable for the metal catalyst in the vicinity of the electrode in order to enhance gas sensitivity, and the impregnation method is more suitable for this purpose. ing.
熱分解は、バーナー、電気炉中で反応させることができ
るが、この発明の場合、電極近傍に析出させる為には還
元炉中で熱分解するのが望ましい。The thermal decomposition can be carried out in a burner or an electric furnace, but in the case of the present invention, it is desirable to carry out the thermal decomposition in a reducing furnace in order to deposit near the electrodes.
電極部付近での金属触媒の粒径を細くするには、触媒粉
末混合法で出発原料を微細なものとしてもよいがこの場
合にはかなり、均一分散がむつかしく実際上、特性の安
定なものをつくりにくいのでむしろ熱分解によって金属
触媒となる金属塩溶液をとくにその溶液状態で用い、予
めセラミック基板上に塗布、焼成を施したセラミック半
導体の焼成層中に含浸させ、その後に比較的低温で熱分
解させる方法がより好ましく、一方粗い金属触媒は粉末
方式の方が作りやすく有利であるが、含浸法によっても
良く、この場合熱分解温度を変え金属触媒の粒径を調整
できる。この発明の場合、これらの特長を組合わせて厚
膜式ガス感応体素子を作ることができる。In order to reduce the particle size of the metal catalyst in the vicinity of the electrodes, it is possible to make the starting materials finer by the catalyst powder mixing method, but in this case, it is quite difficult to uniformly disperse them, and in practice, those with stable characteristics should be used. Since it is difficult to manufacture, a metal salt solution that becomes a metal catalyst by thermal decomposition is used especially in that solution state, and it is impregnated into the firing layer of the ceramic semiconductor that has been previously coated and fired on the ceramic substrate, and then heat is applied at a relatively low temperature. A method of decomposing is more preferable, while a powdery method is advantageous because it is easier to prepare a coarse metal catalyst, but an impregnation method may also be used. In this case, the particle size of the metal catalyst can be adjusted by changing the thermal decomposition temperature. In the case of the present invention, these features can be combined to form a thick film type gas sensitive element.
なお厚膜式ガス感応素子はある程度温度が高くないと充
分な感ガス特性を得ることができないことから、周囲温
度が低い温度にはヒータなどを用いる加熱を必要とする
場合があり、この際センサを小型化したり生産性を向上
させる上で、セラミック基板にヒータ層を設けることが
望ましい。このヒータ層としてはガス検出素子の耐食性
を劣化させないために、ガス検出素子層を500℃以上に
加熱できるようにする。Since the thick film type gas sensitive element cannot obtain sufficient gas sensitive characteristics unless the temperature is high to some extent, it may be necessary to heat using a heater or the like at a low ambient temperature. It is desirable to provide a ceramic substrate with a heater layer in order to reduce the size and improve the productivity. As this heater layer, the gas detection element layer is capable of being heated to 500 ° C. or higher so as not to deteriorate the corrosion resistance of the gas detection element.
さてこの発明の厚膜式感応体素子を内燃機関排気中の酸
素濃度を検出する酸素センサに適用した例について、そ
の構造を具体的に説明する。Now, the structure of an example in which the thick film type sensitive element of the present invention is applied to an oxygen sensor for detecting the oxygen concentration in the exhaust gas of an internal combustion engine will be specifically described.
第1図に素子センサの部分断面をあらわし、図において
10は、セラミック基板上に配設した1対の電極を覆うガ
ス感応体厚膜よりなる検出素子11をそなえ、これにより
酸素濃度を検出するための検出部であり、12は、検出部
10を把持して、酸素センサを内燃機関に取り付けるため
の筒状に形成された主体金具、また、13は主体金具12の
内燃機関側先端部12aに取り付けた、検出部10の保護を
司るプロテクタ、そして14は主体金具12と共に検出部10
を把持する内筒である。Fig. 1 shows a partial cross section of the element sensor.
Reference numeral 10 is a detector for detecting oxygen concentration, which is provided with a detector element 11 made of a gas sensitive material thick film covering a pair of electrodes arranged on a ceramic substrate, and 12 is a detector.
A metal shell formed into a tubular shape for holding the oxygen sensor 10 to attach the oxygen sensor to the internal combustion engine, and a protector 13 attached to the tip 12a of the metal shell 12 on the internal combustion engine side, which protects the detection unit 10. , And 14 together with the metal shell 12 are the detection unit 10
It is an inner cylinder for holding.
検出部10はスペーサ15、充填粉末16及びガラスシール17
を介して主体金具12及び内筒14に把持する。The detection unit 10 includes a spacer 15, a filling powder 16 and a glass seal 17.
The metal shell 12 and the inner cylinder 14 are gripped via the.
また主体金具12の外周には内燃機関取付用のねじ12bを
刻み、その内燃機関壁面に当る取付け壁には排気が漏れ
ないようにガスケット18を設ける。Further, a screw 12b for mounting the internal combustion engine is carved on the outer periphery of the metal shell 12, and a gasket 18 is provided on the mounting wall that is in contact with the wall surface of the internal combustion engine so that exhaust gas does not leak.
ここで充填粉末16は滑石及びガラスの1:1の混合粉末か
らなり、検出部10を内筒14内に固定する。Here, the filling powder 16 is made of a 1: 1 mixed powder of talc and glass, and the detection unit 10 is fixed in the inner cylinder 14.
またガラスシール17は低融点ガラスからなり、検出ガス
の漏れを防止すると共に検出部10の端子を保護するよう
に、検出部10の基板の一部及び後述する白金リード線と
端子との接続部を覆い内筒14内に充填する。Further, the glass seal 17 is made of a low melting point glass, so as to prevent the detection gas from leaking and protect the terminals of the detection unit 10, a part of the substrate of the detection unit 10 and a connecting portion between the platinum lead wire and the terminal described later. And the inside of the inner cylinder 14 is filled.
19は内筒14を覆うように主体金具12に取り付けた外筒、
また20はシリコンゴムからなるシール材であって、リー
ド線21ないし23と、第2図に示すガラスシール17より突
出する検出部10からの端子31ないし33との接続部を絶縁
保護する。このリード線21ないし23と端子31ないし33と
は、第3図に示すように、予め外筒19内にシール材20及
びリード線21ないし23を収めると共に、各リード線21な
いし23の先端にかしめ金具24ないし26を設けて、このか
しめ金具24ないし26を端子31ないし33と接続することに
より導通させる。19 is an outer cylinder attached to the metal shell 12 so as to cover the inner cylinder 14,
Reference numeral 20 is a sealing material made of silicone rubber, which insulates and protects the connecting portions between the lead wires 21 to 23 and the terminals 31 to 33 from the detecting portion 10 protruding from the glass seal 17 shown in FIG. As shown in FIG. 3, the lead wires 21 to 23 and the terminals 31 to 33 have the seal material 20 and the lead wires 21 to 23 housed in the outer cylinder 19 in advance, and at the tips of the lead wires 21 to 23. The caulking metal fittings 24 to 26 are provided, and the caulking metal fittings 24 to 26 are connected to the terminals 31 to 33 for electrical conduction.
次に検出部10は、第4図ないし第8図に示す手順に従っ
て作成するがここに第4図ないし第8図に示す(イ)は
検出部10の正面、(ロ)はA−A線断面をあらわす。Next, the detection unit 10 is prepared in accordance with the procedure shown in FIGS. 4 to 8. Here, (a) shown in FIGS. 4 to 8 is the front of the detection unit 10, and (b) is the AA line. The cross section is shown.
ここで上記第4図ないし第8図の各図において40及び41
は、平均粒径1.5μmのAl2O392重量%、SiO24重量%、C
aO2重量%及びMgO2重量%からなる混合粉末100重量部に
対してブチラール樹脂12重量部及びジブチルフタレート
(DBP)6重量部を添加し、有機溶剤中で混合してスラ
リーとし、ドクタープレートを用いて形成したセラミッ
ク基板のグリーンシートであり、グリーンシート40は厚
さ1mm、グリーンシート41は厚さ0.3mmに作成したもので
ある。Here, in each of FIGS. 4 to 8 above, 40 and 41
Is Al 2 O 3 92% by weight, SiO 2 4% by weight, C having an average particle size of 1.5 μm.
12 parts by weight of butyral resin and 6 parts by weight of dibutyl phthalate (DBP) were added to 100 parts by weight of mixed powder consisting of aO2% by weight and MgO2% by weight, and mixed in an organic solvent to form a slurry, which was then prepared using a doctor plate. The formed ceramic substrate is a green sheet, and the green sheet 40 has a thickness of 1 mm and the green sheet 41 has a thickness of 0.3 mm.
また42ないし47はPtに対し7%のAl2O3を添加した白金
ペーストにて厚膜印刷したパターンであって、そのうち
42及び43は、検出素子11の電極となる電極パターン、ま
た44は検出素子11を加熱するための発熱抵抗体パター
ン、そして45ないし47は発熱抵抗体パターン44や検出素
子11に電源を印加あるいは検出信号を抽出するための導
電パターンである。42 to 47 are patterns of thick film printed with platinum paste containing 7% Al 2 O 3 added to Pt.
42 and 43 are electrode patterns serving as electrodes of the detection element 11, 44 is a heating resistor pattern for heating the detection element 11, and 45 to 47 are power sources applied to the heating resistor pattern 44 and the detection element 11. It is a conductive pattern for extracting a detection signal.
第4図に示す如く、まずグリーンシート40上に各パター
ン42〜47を白金ペーストで厚膜印刷し、次いで第5図に
示すように、電極パターン45ないし47上に直径0.2mmの
白金リード線48ないし50を夫々配設する。なお発熱抵抗
体パターン44を厚膜印刷する際には、この発熱抵抗体パ
ターン44への所定電圧印加によって、検出素子11を、加
熱できるよう、パターン幅を調整するのはいうまでもな
い。As shown in FIG. 4, first, each pattern 42 to 47 is thick-film printed with a platinum paste on the green sheet 40, and then, as shown in FIG. 5, a platinum lead wire having a diameter of 0.2 mm is formed on the electrode patterns 45 to 47. Place 48 to 50 respectively. Needless to say, when the heating resistor pattern 44 is thick-film printed, the pattern width is adjusted so that the detection element 11 can be heated by applying a predetermined voltage to the heating resistor pattern 44.
次に第6図から明らかなように、予めグリーンシート41
には、電極パターン42及び43の先端部が露出するよう打
ち抜きによって開口51を形成しておき、電極パターン42
及び43の先端部を除く全てのパターンを覆って、グリー
ンシート40上にグリーンシート41を積層熱圧着する。Next, as apparent from FIG. 6, the green sheet 41
In this, an opening 51 is formed by punching so that the tips of the electrode patterns 42 and 43 are exposed.
And 43, all the patterns except the tip end portions of the green sheets are covered, and the green sheet 41 is laminated and thermocompression-bonded on the green sheet 40.
このようにして、白金リード線48ないし50の一部が突出
し、電極パターン42及び43の先端部が開口51に露出した
積層板を作成し、引続き、この積層板の開口51上にグリ
ーンシート40,41と同一の材質からなる80〜150メッシュ
の球形造粒粒子(2次粒子)52を分散付着させ、1500℃
の大気中に2時間放置することによって、第6図(ハ)
に拡大図示するように各粒子52が一重に分散してできた
凹凸面を有するセラミック基板を形成させ、ここに粒子
52でできた凸部52′間における凹部52″が末広がりとな
って、後述のガス検知性金属酸化物ペーストを塗布焼付
けしたとき、そのガス検知性金属酸化物層が上記凹部5
2″にくい込んで積層され、セラミック基板に対し強固
に固着されるようにする。Thus, a part of the platinum lead wires 48 to 50 is projected, and a laminated plate in which the tips of the electrode patterns 42 and 43 are exposed in the opening 51 is formed, and subsequently, the green sheet 40 is formed on the opening 51 of the laminated plate. Spherical granulated particles (secondary particles) 52 of 80-150 mesh made of the same material as 1, 41 are dispersed and attached at 1500 ° C.
6 (C) by leaving it in the atmosphere for 2 hours.
As shown in the enlarged view, a ceramic substrate having a concavo-convex surface formed by uniformly dispersing each particle 52 is formed.
When the gas-detectable metal oxide paste described below is applied and baked, the gas-detectable metal oxide layer has the above-mentioned recesses 5 ″.
It is 2 "thick and stacked so that it is firmly fixed to the ceramic substrate.
次に第7図に示すように、セラミック基板の開口51に検
出素子11を積層させる。Next, as shown in FIG. 7, the detection element 11 is laminated in the opening 51 of the ceramic substrate.
検出素子11は次のようにして製造した。The detection element 11 was manufactured as follows.
(1) TiO2素子ペースト(I)の作成 TiO2原料粉末500gを大気中1200℃で1時間仮焼し素子用
粉末とする。次にこの粉末100gに対してゴチルカルビド
ール100gを加えボールミル内で24hr粉砕混合した後バイ
ンダーとしてブチラールをTiO2100gに対して2g添加し1h
r混合しペーストが完成する。(1) Preparation of TiO 2 element paste (I) 500 g of TiO 2 raw material powder is calcined in the air at 1200 ° C. for 1 hour to obtain element powder. Next, 100 g of this powder was added to 100 g of this powder, and pulverized and mixed in a ball mill for 24 hours, then 2 g of butyral was added to 100 g of TiO 2 as a binder for 1 h.
r Mix and paste is completed.
(2) TiO2素子(I)の形成 (1)のペーストを、基板上の凹部に塗布乾燥し、1100
℃で2時間焼成する。(2) Formation of TiO 2 element (I) The paste of (1) was applied to the recesses on the substrate and dried to form 1100
Bake at ℃ for 2 hours.
(3) 金属触媒(I)の担持 (2)で得られたTiO2素子(I)に金属塩溶液を含浸さ
せる。この溶液の種類、濃度は希望する触媒種及び量に
よっ決定する。例えばPt5モル%、Rh0.5モル%担持する
場合はPt200g/、Rh20g/の塩化白金酸、ロジウム酸
水溶液をTiO2膜厚100μmに対して1μ使用する。こ
のようにして含浸した後100〜150℃にて1hr乾燥させた
後、電気炉中800℃で熱分解し約0.1μmのPtをTiO2に焼
付ける。(3) Support of metal catalyst (I) The TiO 2 device (I) obtained in (2) is impregnated with a metal salt solution. The type and concentration of this solution depend on the desired catalyst type and amount. For example, in the case of supporting Pt 5 mol% and Rh 0.5 mol%, Pt 200 g / and Rh 20 g / chloroplatinic acid / rhodic acid aqueous solution is used in an amount of 1 μ per 100 μm of TiO 2 film thickness. After impregnating in this way, it is dried at 100 to 150 ° C. for 1 hour, and then thermally decomposed at 800 ° C. in an electric furnace to burn Pt of about 0.1 μm to TiO 2 .
以上の処置によって電極近辺の素子形成が終了する。With the above procedure, the formation of elements near the electrodes is completed.
(4) TiO2素子ペースト(II)の作製 TiO2原料粉末に(I)とは異なる種類の触媒金属、例え
ばPtを10モル%担持させるために、1.2μmのPtブラッ
クを10モル%混練するか(粉末法)、あるいは塩化白金
酸溶液をPtで10モル%相当を含浸させ200〜250℃で24hr
乾燥した後電気炉中1200℃で1時間焼成し、素子粉末に
1.3μmのPtを焼付ける(含浸法)。次にこの粉末100g
に対してブチルカルビドール100gを加えボールミル内で
24hr粉砕混合した後ブチラール樹脂を2g添加1hr混合し
ペーストが完了する。(4) Preparation of TiO 2 element paste (II) In order to support 10 mol% of a catalyst metal of a different type from (I) on the TiO 2 raw material powder, 10 mol% of 1.2 μm Pt black is kneaded. Or (powder method) or impregnate 10% by mol of Pt with a chloroplatinic acid solution at 200 to 250 ° C for 24 hours
After drying, bake in an electric furnace at 1200 ℃ for 1 hour to obtain element powder.
Baking 1.3 μm Pt (impregnation method). Then 100g of this powder
Butyl carbidol 100g was added to the ball mill.
After crushing and mixing for 24 hours, add 2 g of butyral resin and mix for 1 hour to complete the paste.
(5) TiO2素子(II)の形成 (4)のペーストを第8図に示す如く素子(I)の上に
塗布乾燥し、電気炉中1100℃で2hr焼成し、素子形成が
完了する。(5) Formation of TiO 2 element (II) The paste of (4) is applied and dried on the element (I) as shown in FIG. 8 and baked in an electric furnace at 1100 ° C. for 2 hours to complete the element formation.
以上(1)〜(5)の処置によってTiO2素子膜は表面層
と電極近辺層とで異なる触媒を持つことにより、その触
媒の種類、量は金属粉末および金属塩溶液を選択するこ
とにより任意にコントロールでき、またその触媒を有す
るTiO2層の厚さも塗布するペーストの量によりコントロ
ールできる。尚金属触媒の担持方法は上記の含浸法、粉
末混練法のいずれでも良く担持量が同じであれば同じ効
果を発揮し、TiO2素子(I)に粉末混練法を用いTiO2素
子(II)に含浸法を用いても良い。By the above treatments (1) to (5), the TiO 2 element film has different catalysts in the surface layer and the layer in the vicinity of the electrodes, and the kind and amount of the catalyst can be arbitrarily selected by selecting the metal powder and the metal salt solution. The thickness of the TiO 2 layer having the catalyst can also be controlled by the amount of the applied paste. Incidentally method for supporting a metal catalyst impregnation methods described above, if a well-supported amount either powder mixing method is the same to the same effect, a powder mixing method using a TiO 2 element (I) TiO 2 elements (II) Alternatively, an impregnation method may be used.
このようにして作成した検出部10は、その外部に突出し
た白金リード線48ないし50を第9図に示すとおり端子31
ないし33と接続した。尚、図において(イ)は正面、
(ロ)は右側面を示している。In the detector 10 thus produced, the platinum lead wires 48 to 50 protruding outside are connected to the terminal 31 as shown in FIG.
Thru 33 connected. In the figure, (a) is the front,
(B) indicates the right side surface.
第9図に示した、端子31ないし33は予め厚さ0.5mm程度
のニッケル板にエッチング加工によって一体形成してお
き、各端子には白金リード線48ないし50をそれぞれのせ
て、その部分をスポット溶接することによって端子の接
合を行なってから、検出部10を主体金具12及び内筒14内
に固定した後、鎖線で示すように所定の長さに切断する
と取扱い易い。The terminals 31 to 33 shown in FIG. 9 are integrally formed in advance on a nickel plate having a thickness of about 0.5 mm by etching, and platinum lead wires 48 to 50 are mounted on the respective terminals, and the portions are spotted. After the terminals are joined by welding, the detecting portion 10 is fixed in the metal shell 12 and the inner cylinder 14, and then cut into a predetermined length as shown by a chain line for easy handling.
その後第3図に示したリード線24,25,26を端子31,32,33
にそれぞれ接続し、シール材20、外筒19をはめ合わせて
溶接し、第1図のようにセンサを組立てる。After that, connect the lead wires 24, 25, 26 shown in Fig. 3 to terminals 31, 32, 33.
, And the sealing material 20 and the outer cylinder 19 are fitted together and welded to assemble the sensor as shown in FIG.
センサは市販の2のEFI付き3元触媒車に、第10図の
ように取り付け、米国EPA HOT TRANSIENT MODEを走行
し、走行中の排ガス量をCVSにてエミッション量を測定
した。The sensor was attached to a commercially available two-way three-way catalyst vehicle with EFI as shown in Fig. 10, and the US EPA HOT TRANSIENT MODE was run, and the amount of exhaust gas during running was measured by CVS.
第10図において60は供試エンジン、61は排気管、61aは
センサ取付け部、Sがセンサであり、65は制御ユニッ
ト、67は3元触媒である。第11図に制御ユニット65の回
路構成を示し、70は電源、72はヒーター、74は感ガス素
子、76は比較抵抗である。In FIG. 10, 60 is a test engine, 61 is an exhaust pipe, 61a is a sensor mounting portion, S is a sensor, 65 is a control unit, and 67 is a three-way catalyst. FIG. 11 shows the circuit configuration of the control unit 65, where 70 is a power source, 72 is a heater, 74 is a gas sensitive element, and 76 is a comparative resistor.
(実施例) 第12図に示す耐久パターンでエンジン排ガス中、300HR
の耐久供用をして劣化を生じさせ、その後に再び上記エ
ミッション量を測定し、センサの制御空燃比のシフトを
測定し、耐久供用前後にわたる変化量を観測し、評価と
した。(Example) 300 HR in engine exhaust gas with the durability pattern shown in FIG.
Was subjected to durable service to cause deterioration, and then the emission amount was measured again, the shift of the control air-fuel ratio of the sensor was measured, and the change amount before and after the durable service was observed and evaluated.
結果を表1に示すように、従来品は耐久供用前後でのNO
xエミッション量の変動が大きくとくに耐久後にNOxが多
く排出され制御点がリーンへシフトしたことを示す。As shown in Table 1, the results of the conventional products are NO before and after durable operation.
This indicates that the control point has shifted to the lean side due to the large fluctuations in the x emission amount, especially the NOx emission after endurance.
これに対し、この発明によるセンサは初期と耐久後の変
動が少く安定した排ガスシステムを作ることができる。On the other hand, the sensor according to the present invention can form a stable exhaust gas system with little variation between the initial stage and the end stage.
以上この発明の実施例では、2層構造の例にて説明した
が3層以上の場合ももらろん、表面層上へさらに絶縁性
コーティング層を設ける場合でも、上記したところと同
様の効果が得られる。 In the embodiment of the present invention, the example of the two-layer structure has been described above. However, the same effect as described above can be obtained not only when the number of layers is three or more but also when the insulating coating layer is further provided on the surface layer. can get.
(発明の効果) この発明によれば厚膜式ガス感応体素子のとくに表面層
における金属触媒の劣化が激減し、触媒劣化に由来する
変調を来す不利がなくなる。(Effect of the Invention) According to the present invention, the deterioration of the metal catalyst of the thick film type gas sensitive element, especially in the surface layer, is drastically reduced, and the disadvantage caused by the catalyst deterioration is eliminated.
第1図ないし第9図はこの発明に従う厚膜式ガス感応体
素子を酸素センサに適用する実施例を示し、 第1図は酸素センサの全体構成を示す要部の断面図、 第2図は内筒14及びガラスシール17より突出する端子31
ないし33部分を断面とした分解図、 第3図は外筒19及び予め外筒19内に収納したシール材20
の関係を断面で示す分解図、 第4図ないし第8図は検出部10の組立て工程順序の説明
図、 第9図は端子31〜33の接続要領説明図、 第10図及び第11図は酸素センサを内燃機関に使用する耐
久実験要領説明図、 第12図は耐久パターン図である。 40,41……セラミック基板 42,43……電極パターン 11……検出部(ガス感応体厚膜)1 to 9 show an embodiment in which the thick film type gas sensitive element according to the present invention is applied to an oxygen sensor, and FIG. 1 is a sectional view of a main part showing the overall configuration of the oxygen sensor, and FIG. Terminal 31 protruding from the inner cylinder 14 and the glass seal 17
Fig. 3 is an exploded view with a section of 33 to 33, and Fig. 3 shows the outer cylinder 19 and the sealing material 20 previously stored in the outer cylinder 19.
4 to 8 are explanatory views of the assembling process sequence of the detection unit 10, FIG. 9 is an explanatory view of the connecting procedure of the terminals 31 to 33, and FIG. 10 and FIG. FIG. 12 is an endurance test procedure explanatory diagram using an oxygen sensor in an internal combustion engine, and FIG. 12 is an endurance pattern diagram. 40,41 …… Ceramic substrate 42,43 …… Electrode pattern 11 …… Detector (gas sensitive film)
フロントページの続き (72)発明者 高見 昭雄 愛知県名古屋市瑞穂区高辻町14番18号 日 本特殊陶業株式会社内 (56)参考文献 特開 昭56−106147(JP,A) 特開 昭56−112638(JP,A)Front Page Continuation (72) Inventor Akio Takami 14-18 Takatsuji-cho, Mizuho-ku, Nagoya, Aichi Nihon Special Ceramics Co., Ltd. (56) Reference JP-A-56-106147 (JP, A) JP-A-56 -112638 (JP, A)
Claims (8)
覆うセラミック半導体と金属触媒よりなるガス感応体厚
膜にして、 厚膜を多層化し少くとも電極近辺層にはRhを含みかつ該
電極近辺層のRhの濃度を他の層よりも高めた ことを特徴とする厚膜式ガス感応体素子。1. A gas sensitive material thick film composed of a ceramic semiconductor and a metal catalyst covering a pair of electrodes arranged on a ceramic substrate, wherein the thick film is multi-layered and at least the layer near the electrode contains Rh, and A thick film type gas sensitive element characterized by having a higher Rh concentration in the layer near the electrode than in other layers.
属触媒が、Ptのみ又はPtとRhの分散からなり、電極近辺
層中の金属触媒がRhとPtの分散又はRhとPdの分散からな
る、特許請求の範囲1に記載の素子。2. The metal catalyst in the surface layer of a multi-layered gas-sensitizer thick film is composed of Pt alone or a dispersion of Pt and Rh, and the metal catalyst in a layer near the electrode is a dispersion of Rh and Pt or Rh and Pd. A device according to claim 1, which comprises a dispersion of
める金属触媒中にはRhを含まないか又は含んでもセラミ
ック半導体に対し0.2モル%以下で含み、電極近辺層に
存在する金属触媒中にはRhを0.2モル%をこえ3モル%
以下で含む、特許請求の範囲1に記載の素子。3. A metal catalyst which occupies the surface layer of a multi-layered gas-sensing element thick film, contains no Rh or contains Rh in an amount of 0.2 mol% or less with respect to the ceramic semiconductor and existing in a layer near the electrode. The catalyst contains more than 0.2 mol% Rh and 3 mol%
The device of claim 1 comprising:
存在する金属触媒に比しより粒径の大きいものである、
特許請求の範囲1,2又は3に記載の素子。4. The metal catalyst occupying the surface layer has a larger particle size than the metal catalyst existing in the layer near the electrode.
The device according to claim 1, 2 or 3.
m以下のPtであり、電極近辺層に存在する金属触媒が粒
径0.5μm未満でセラミック半導体に対し0.2モル%をこ
え3モル%以下に当るRh又はその合金を含むものであ
る、特許請求の範囲3に記載の素子。5. The metal catalyst occupying the surface layer has a particle size of 0.5 μm.
Claim 3 wherein the Pt is less than or equal to m, and the metal catalyst present in the layer near the electrode has a particle size of less than 0.5 μm and more than 0.2 mol% and 3 mol% or less of Rh or its alloy with respect to the ceramic semiconductor. The element described in 1.
ク半導体ペースト焼成層への含浸、熱分解による金属触
媒の分散に成るセラミック半導体の積層構造である、特
許請求の範囲1,2,3,4又は5に記載の素子。6. The gas-sensitizer thick film has a laminated structure of ceramic semiconductors in which a calcined layer of a ceramic semiconductor paste is impregnated with a metal salt solution and a metal catalyst is dispersed by thermal decomposition. The element according to 3, 4, or 5.
スト中への金属触媒粉末の混入、焼成による金属触媒の
分散に成るセラミック半導体の積層構造である、特許請
求の範囲1,2,3,4又は5に記載の素子。7. The gas sensitive material thick film has a laminated structure of ceramic semiconductors in which the metal catalyst powder is mixed into the ceramic semiconductor paste and the metal catalyst is dispersed by firing, and the laminated structure of ceramic semiconductors. The element according to 4 or 5.
ク半導体ペースト焼成層への含浸、熱分解による金属触
媒の分散に成るセラミック半導体と、セラミック半導体
ペースト中への金属触媒粉末の混入焼成による金属触媒
の分散になるセラミック半導体との積層構造である、特
許請求の範囲1,2,3,4又は5に記載の素子。8. A gas-sensitizer thick film is a ceramic semiconductor in which a metal salt solution is impregnated into a ceramic semiconductor paste firing layer and a metal catalyst is dispersed by thermal decomposition, and a metal catalyst powder is mixed and fired in the ceramic semiconductor paste. The element according to claim 1, 2, 3, 4, or 5, which has a laminated structure with a ceramic semiconductor in which the metal catalyst is dispersed according to (3).
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6117386A JPH0713602B2 (en) | 1986-03-19 | 1986-03-19 | Thick film gas sensor element |
| US07/027,357 US4857275A (en) | 1986-03-19 | 1987-03-18 | Thick-film gas-sensitive element |
| DE8787104020T DE3767736D1 (en) | 1986-03-19 | 1987-03-19 | GAS SENSITIVE THICK FILM ELEMENT. |
| EP87104020A EP0238081B1 (en) | 1986-03-19 | 1987-03-19 | Thick-film gas-sensitive element |
| US07/517,749 USRE33980E (en) | 1986-03-19 | 1990-05-02 | Thick-film gas-sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6117386A JPH0713602B2 (en) | 1986-03-19 | 1986-03-19 | Thick film gas sensor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62217151A JPS62217151A (en) | 1987-09-24 |
| JPH0713602B2 true JPH0713602B2 (en) | 1995-02-15 |
Family
ID=13163490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6117386A Expired - Fee Related JPH0713602B2 (en) | 1986-03-19 | 1986-03-19 | Thick film gas sensor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0713602B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6480845A (en) * | 1987-09-24 | 1989-03-27 | Toyota Motor Corp | Catalyst carrying method for oxygen sensor |
| JPH01212342A (en) * | 1988-02-19 | 1989-08-25 | Ngk Spark Plug Co Ltd | Gas detector and preparation thereof |
-
1986
- 1986-03-19 JP JP6117386A patent/JPH0713602B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62217151A (en) | 1987-09-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |