JPH0715838B2 - Plasma generator - Google Patents
Plasma generatorInfo
- Publication number
- JPH0715838B2 JPH0715838B2 JP2098408A JP9840890A JPH0715838B2 JP H0715838 B2 JPH0715838 B2 JP H0715838B2 JP 2098408 A JP2098408 A JP 2098408A JP 9840890 A JP9840890 A JP 9840890A JP H0715838 B2 JPH0715838 B2 JP H0715838B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- mode
- magnetic field
- cylinder
- microwave power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002184 metal Substances 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000005284 excitation Effects 0.000 description 12
- 238000009826 distribution Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 230000005672 electromagnetic field Effects 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 プラズマ発生装置の応用分野は年毎に拡大しつつある。
プラズマ発生装置からは電子、イオン、イオンラジカル
などを発生させることができ、特に電子工業方面では、
取り出したイオンビームによって、イオン注入、イオン
プレーティング、結晶成長、スパッタリング、エッチン
グ、化合物合成など多方面に応用されている。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The application fields of plasma generators are expanding year by year.
From the plasma generator, it is possible to generate electrons, ions, ion radicals, etc., especially in the electronics industry,
The extracted ion beam is applied in various fields such as ion implantation, ion plating, crystal growth, sputtering, etching, and compound synthesis.
本発明は、マイクロ波電力を供給してプラズマを発生さ
せ、イオンビームを取り出すプラズマ発生装置に関す
る。The present invention relates to a plasma generator that supplies microwave power to generate plasma and extracts an ion beam.
電子サイクロトロン共鳴吸収(ECR)は磁界と電子の相
互作用によって、マイクロ波電力が有効に電子を加熱し
て高密度のプラズマを作るので、プラズマ発生装置とし
て各方面で利用されているが、いまだに100mm以上の大
口径で可及的平坦なプラズマを発生させることが困難で
ある。Electron cyclotron resonance absorption (ECR) is used in various fields as a plasma generator because microwave power effectively heats electrons to create high-density plasma by the interaction of magnetic fields and electrons, but it is still 100 mm. It is difficult to generate plasma as flat as possible with the above large diameter.
〔発明が解決しようとする課題〕 従来、ECRを使用するプラズマ発生装置としては、種々
の方式が発表されているが、全て単一モード励振であっ
て、そのため大口径のプラズマが発生出来なかった。[Problems to be Solved by the Invention] Conventionally, various methods have been announced as plasma generators using ECR, but all of them are single-mode excitations, and therefore large-diameter plasma cannot be generated. .
本発明は、大口径の金属製円筒内でマイクロ波電力によ
るTEonモード励振を行い、この周波数に対応する磁界を
加えてサイクロトロン共鳴を生じさせることにより大口
径で可及的平坦なプラズマを発生させるプラズマ発生装
置を提供することを目的とする。The present invention performs TE on mode excitation by microwave power in a large-diameter metal cylinder, and generates a cyclotron resonance by applying a magnetic field corresponding to this frequency to generate a plasma as flat as possible with a large diameter. It is an object of the present invention to provide a plasma generator that enables the above.
本発明は、イオン化物質が注入される金属製の円筒、該
円筒の一方の軸方向端面から複数のループコイル又は細
隙を経由してTEonモードの励振を行うマイクロ波電力供
給手段、該円筒の外部よりマイクロ波周波数に対応する
磁界を加えて電子サイクロトロン共鳴吸収を生じさせる
磁界発生手段を有することを特徴とするプラズマ発生装
置である。The present invention relates to a metal cylinder into which an ionized substance is injected, a microwave power supply means for exciting a TE on mode from one axial end surface of the cylinder through a plurality of loop coils or slits, and the cylinder. And a magnetic field generation means for generating an electron cyclotron resonance absorption by applying a magnetic field corresponding to a microwave frequency from the outside of the plasma generator.
金属製円筒内の共振モードには、TE波とTM波とがある
が、前者は電界が導体に接しないのに、後者では電界が
導体を切ることになり損失が大きく能率が悪い。そこで
本発明ではTE波の高次モードであるTEonモード励振を採
用した。モード信号の添字の始めのoは、円周方向に電
磁界の変化のないことを示し、次のnは半径方向の変化
の回数を示している。またこの金属製円筒の軸方向両端
が金属板で塞がれていると、共振器を形成してこのモー
ドはTEonmの形で示され、このときmは軸方向の電磁界
の変化の数を現している。TE021共振器の電磁界の縦断
面図を第2図、横断面図を第3図に示している。第2図
・第3図において、1はプラズマ室、2はマイクロ波電
力の入力端子、71・72は電界分布、8は磁界分布、12・
13は金属板を示す。プラズマ室1は金属製の円筒の構造
を有し、その円筒の軸方向の両端面は金属板12・13で塞
がれている。電界分布も磁界分布も金属壁面に触れない
ので、そのための損失は軽微である。図はnが2の場合
を示しているが、一般にはn層になる。本発明では、TE
onモード励振によってマイクロ波電力を加えるので、プ
ラズマ励起部が単一モード励振のn倍となり、大口径の
金属製円筒内に広がるので、目的を達成することができ
る。There are TE waves and TM waves in the resonance modes in the metal cylinder. In the former, the electric field does not contact the conductor, but in the latter, the electric field cuts the conductor, resulting in large loss and inefficiency. Therefore, in the present invention, TE on mode excitation, which is a higher mode of TE wave, is adopted. The o at the beginning of the subscript of the mode signal indicates that there is no change in the electromagnetic field in the circumferential direction, and the next n indicates the number of changes in the radial direction. When both ends of the metal cylinder in the axial direction are closed by metal plates, a resonator is formed and this mode is shown in the form of TE onm , where m is the number of changes in the electromagnetic field in the axial direction. Is showing. A longitudinal sectional view of the electromagnetic field of the TE 021 resonator is shown in FIG. 2, and a transverse sectional view thereof is shown in FIG. 2 and 3, 1 is a plasma chamber, 2 is an input terminal for microwave power, 71 and 72 are electric field distributions, 8 is a magnetic field distribution, 12 ...
13 indicates a metal plate. The plasma chamber 1 has a structure of a metal cylinder, and both end surfaces in the axial direction of the cylinder are closed by metal plates 12 and 13. Since neither the electric field distribution nor the magnetic field distribution touches the metal wall surface, the loss for that is small. Although the drawing shows the case where n is 2, generally n layers are formed. In the present invention, TE
Since the microwave power is applied by the on- mode excitation, the plasma excitation portion becomes n times as large as the single-mode excitation and spreads in the large-diameter metal cylinder, so that the object can be achieved.
TEon1形共振器の場合、直径Dが最小値以下になると減
衰してしまって、軸方向への伝搬ができなくなるので、
直径Dは最小値以上にしなければならない。各伝搬モー
ドに対する遮断波長λcと周波数2.45GHzに対する最小
直径Dminには、下表の関係がある。In the case of a TE on1 type resonator, when the diameter D becomes less than the minimum value, it will be attenuated and propagation in the axial direction will not be possible.
The diameter D must be greater than or equal to the minimum value. The cutoff wavelength λ c for each propagation mode and the minimum diameter D min for the frequency 2.45 GHz have the relationship shown in the following table.
いま使用周波数を2.45GHzとすると、その波長λ0は λ0=122.364mm となり、共振器の共振長Lmmは管内波長の(1/2)だか
ら、次式で求められる。 Assuming that the used frequency is 2.45 GHz, the wavelength λ 0 is λ 0 = 122.364 mm, and the resonance length Lmm of the resonator is (1/2) of the guide wavelength, so it can be calculated by the following formula.
L=λ0/2/{1−(λ0/λc)2}0.5 従って、使用周波数2.45GHzの共振器の直径Dを最小値
径Dmin以上に数点選んだ場合、その共振長Lmmは下表の
様に求められる。 L = λ 0/2 / { 1- (λ 0 / λ c) 2} 0.5 Accordingly, when choosing several points above the minimum diameter D min the diameter D of the cavity of the used frequency 2.45 GHz, the resonant length Lmm Is calculated as shown in the table below.
上表のように、TEon1モードでは直径Dを太くすると、
共振長Lが短くなるので、Lを長くするにはTEonmモー
ドにすれば、m倍に拡張することができる。 As shown in the above table, when the diameter D is thickened in TE on 1 mode,
Since the resonance length L becomes short, if the TE onm mode is used to make L longer, it can be expanded m times.
電子サイクロトロン共鳴では、磁界とマイクロ波電力の
相互作用によって、プラズマ電子を選択加熱して、高密
度のプラズマを作ることができる。電子サイクロトロン
周波数f(GHz)と磁界強度B(kGauss)の間には、次
の関係がある。In electron cyclotron resonance, plasma electrons can be selectively heated by the interaction between a magnetic field and microwave power to create high-density plasma. There is the following relationship between the electron cyclotron frequency f (GHz) and the magnetic field strength B (kGauss).
f=2.8B 即ち、f=2.45(GHz)では、B=0.875(kGauss)とな
る。ただこの磁界強度はプラズマ発生室の全面に亘って
この値にする必要はなく、特にイオン化物質の導入口付
近でプラズマ点火させる部分と、プラズマ発生室の出口
付近でマグネチック・ミラー作用を行わせるために、こ
の磁界強度に調整すれば良い。f = 2.8B That is, at f = 2.45 (GHz), B = 0.875 (kGauss). However, this magnetic field strength does not have to be set to this value over the entire surface of the plasma generation chamber, and in particular, the portion where the plasma is ignited near the ionized substance introduction port and the magnetic mirror action is performed near the plasma generation chamber outlet. Therefore, the magnetic field strength may be adjusted.
第1図は本発明の概略を説明するための縦断面図であ
る。FIG. 1 is a vertical cross-sectional view for explaining the outline of the present invention.
1は金属円筒で作られたプラズマ室で、この金属円筒の
軸方向の一方の端面は金属板12で封止され、TEonモード
励振を行うように端子2からマイクロ波電力が供給され
ている。3は励磁コイルまたは永久磁石でプラズマ室1
内を必要な磁界強度におく。4はプラズマ物質投入口で
多方向からガス状物質をプラズマ室1内に送り込み、プ
ラズマ室1の内部は10-2乃至10-3Torr程度にしている。
このプラズマ物質投入口4の付近ではサイクロトロン共
鳴吸収を起こすような強度の磁界が加えられているの
で、プラズマが点火され、ガスの流れに従ってプラズマ
室1の内部に拡散して平均化される。このプラズマ流は
TEonモードのマイクロ波電力で励振されているので、直
径の太いものとなる。プラズマ室1の他方の端面は金属
板13に多くの小孔が穿たれており、イオン引き出し電極
5との電位差によって、太いイオン・ビーム6となって
外部に取り出される。Reference numeral 1 is a plasma chamber made of a metal cylinder, and one end face in the axial direction of the metal cylinder is sealed with a metal plate 12, and microwave power is supplied from a terminal 2 to perform TE on mode excitation. . 3 is an exciting coil or a permanent magnet, and is a plasma chamber 1
Set the inside to the required magnetic field strength. Reference numeral 4 denotes a plasma substance introduction port for feeding gaseous substances into the plasma chamber 1 from multiple directions, and the inside of the plasma chamber 1 is set to about 10 -2 to 10 -3 Torr.
In the vicinity of the plasma substance input port 4, a magnetic field having a strength that causes cyclotron resonance absorption is applied, so that the plasma is ignited and diffused inside the plasma chamber 1 according to the flow of gas to be averaged. This plasma flow
Since it is excited by the microwave power of TE on mode, it has a large diameter. On the other end surface of the plasma chamber 1, many small holes are made in the metal plate 13, and a thick ion beam 6 is taken out to the outside due to the potential difference with the ion extraction electrode 5.
第4図は、ループコイルでマイクロ波電力を供給する状
態をプラズマ室1の内部からみたものである。TEonモー
ド励振では端面の辺りの磁界が、第2図や第3図に示さ
れているように、直径方向に向いているので、ループコ
イル21・22のむきを磁界に直角になるようにし、しかも
その隣り合う励振位相が逆になるように取り付ける。ま
たプラズマ室内は低度の真空状態だから、金属板12のル
ープ取り付け部は耐熱絶縁物9で封じる。すなわち、第
4図においてループコイル21は、耐熱絶縁物9の位置21
1からプラズマ室内に引き込まれた後図面左側に折り曲
げられ、さらに折り曲げられた後金属板12に接合され
る。ループコイル22は、ループコイル21との逆の方向か
ら引き込まれるので、位置221からプラズマ室内に引き
込まれる。FIG. 4 shows a state in which microwave power is supplied by the loop coil as viewed from the inside of the plasma chamber 1. In the TE on mode excitation, the magnetic field around the end face is oriented in the diametrical direction as shown in Fig. 2 and Fig. 3, so make sure that the strips of the loop coils 21 and 22 are perpendicular to the magnetic field. Moreover, they are attached so that the adjacent excitation phases are reversed. Further, since the plasma chamber is in a low vacuum state, the loop mounting portion of the metal plate 12 is sealed with the heat resistant insulator 9. That is, in FIG. 4, the loop coil 21 is located at the position 21 of the heat resistant insulator 9.
After being drawn into the plasma chamber from 1, it is bent to the left side in the drawing, and further bent and then joined to the metal plate 12. The loop coil 22 is retracted from the opposite direction to the loop coil 21, and therefore is retracted from the position 221 into the plasma chamber.
また導波管から細隙を通してマイクロ波励振を行う場合
には、第5図のように磁界に直角に穿たれた細隙10を通
して導波管11からマイクロ波電力が供給される。この場
合も、隣り合う細隙10の励振位相が逆になるように構成
し、その細隙には耐熱絶縁物で封じて気密を保ってい
る。When microwave excitation is performed from the waveguide through the slit, microwave power is supplied from the waveguide 11 through the slit 10 formed at right angles to the magnetic field as shown in FIG. In this case also, the adjacent slits 10 are constructed so that the excitation phases thereof are opposite to each other, and the slits are sealed with a heat-resistant insulating material to maintain airtightness.
本発明において、大型の共振器を使用する場合に問題に
なるのは、TMモードをいかに抑止するかである。異種モ
ード共振だがTEonモードでは特にTM1nモードと寸法が一
致するので問題となのである。In the present invention, the problem when using a large resonator is how to suppress the TM mode. Although it is a heterogeneous mode resonance, it is a problem in the TE on mode because the dimensions are the same as the TM 1n mode.
TM1nモードでは、TEonの電界と磁界が逆になるので、共
振器壁内にマイクロ波電流が流れ損失が増加する。そこ
で本発明では、異種モード・サップレッサーとして第6
図の構成を試みた。第6図はプラズマ室の円筒の端面部
分の一部縦断面図であり、円筒101と金属板121の間に耐
熱絶縁環91を挿入してTMモード共振の電気ロスを大きく
したものである。耐熱絶縁環91は異種モード共振のTMモ
ードのサプレッサーとして用いられたものである。In the TM 1n mode, the electric field and the magnetic field of TE on are opposite to each other, so that the microwave current flows in the resonator wall and the loss increases. Therefore, in the present invention, the sixth mode suppressor is used as a heterogeneous mode suppressor.
I tried to construct the figure. FIG. 6 is a partial vertical cross-sectional view of the end face portion of the cylinder of the plasma chamber, in which a heat-resistant insulating ring 91 is inserted between the cylinder 101 and the metal plate 121 to increase the electrical loss of TM mode resonance. The heat-resistant insulating ring 91 is used as a suppressor for TM mode of different mode resonance.
本実施例ではマイクロ波電源として2.45GHz、5kWのもの
を使用し、プラズマ室寸法は直径320mm、長さ235.7mm
(TE022モードとなる)を使い、外部から励磁コイルに
よって875gaussとなる磁界を加えた。その結果、多数の
試料で高能率で大口径のほぼ均一なプラズマ発生が認め
られた。In this embodiment, a microwave power source of 2.45 GHz and 5 kW is used, and the plasma chamber dimensions are 320 mm in diameter and 235.7 mm in length.
(TE022 mode) was used, and a magnetic field of 875 gauss was applied from the outside by an exciting coil. As a result, it was confirmed that a large number of samples generated plasma with high efficiency and large diameter.
本発明によって、高能率で200mm乃至500mmといった大口
径のプラズマが、ほぼ均一に発生できた。According to the present invention, plasma with a large diameter of 200 mm to 500 mm can be generated substantially uniformly with high efficiency.
第1図は本発明のプラズマ発生装置の構成説明図、第2
図はTE012共振器の電磁界縦断面図、第3図はその横断
面図、第4図はループコイルを用いた実施例を示す図、
第5図は細隙によるマイクロ波励振を用いた実施例を示
す図、第6図はサプレッサーの縦断面図。 1はプラズマ室、2は入力端子、21・22はループコイ
ル、3は励磁コイルまたは永久磁石、4はプラズマ物質
投入口、5はイオン引き出し電極、6はイオンビーム、
71・72は電界分布、8は磁界分布、9は耐熱絶縁物、10
は細隙、11は導波管、12・13・121は金属板、91は耐熱
絶縁環、101は円筒。FIG. 1 is a structural explanatory view of a plasma generator of the present invention, and FIG.
The figure shows a longitudinal cross-sectional view of the electromagnetic field of the TE 012 resonator, FIG. 3 shows its cross-sectional view, and FIG. 4 shows an embodiment using a loop coil.
FIG. 5 is a view showing an embodiment using microwave excitation by a slit, and FIG. 6 is a vertical sectional view of a suppressor. 1 is a plasma chamber, 2 is an input terminal, 21 and 22 are loop coils, 3 is an exciting coil or a permanent magnet, 4 is a plasma substance inlet, 5 is an ion extraction electrode, 6 is an ion beam,
71 and 72 are electric field distribution, 8 is magnetic field distribution, 9 is heat resistant insulator, 10
Is a slit, 11 is a waveguide, 12/13/121 is a metal plate, 91 is a heat-resistant insulating ring, and 101 is a cylinder.
Claims (2)
該円筒の一方の軸方向端面から複数のループコイル又は
細隙を経由してTEonモードの励振を行うマイクロ波電力
供給手段、該円筒の外部よりマイクロ波周波数に対応す
る磁界を加えて電子サイクロトロン共鳴吸収を生じさせ
る磁界発生手段を有することを特徴とするプラズマ発生
装置。1. A metal cylinder into which an ionized substance is injected,
Microwave power supply means for exciting the TE on mode from one axial end surface of the cylinder through a plurality of loop coils or slits, and an electron cyclotron by applying a magnetic field corresponding to the microwave frequency from the outside of the cylinder. A plasma generator comprising magnetic field generating means for causing resonance absorption.
のTMモードの供給を抑止するためのサプレッサーを備え
た請求項(1)記載のプラズマ発生装置。2. The plasma generator according to claim 1, further comprising a suppressor provided between the cylinder and the axial end face for suppressing the TM mode supply of microwave power.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2098408A JPH0715838B2 (en) | 1990-04-13 | 1990-04-13 | Plasma generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2098408A JPH0715838B2 (en) | 1990-04-13 | 1990-04-13 | Plasma generator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03297098A JPH03297098A (en) | 1991-12-27 |
| JPH0715838B2 true JPH0715838B2 (en) | 1995-02-22 |
Family
ID=14219010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2098408A Expired - Fee Related JPH0715838B2 (en) | 1990-04-13 | 1990-04-13 | Plasma generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0715838B2 (en) |
-
1990
- 1990-04-13 JP JP2098408A patent/JPH0715838B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03297098A (en) | 1991-12-27 |
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