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JPH0716071B2 - Semiconductor light emitting element output stabilization circuit - Google Patents
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JPH0716071B2 - Semiconductor light emitting element output stabilization circuit - Google Patents

Semiconductor light emitting element output stabilization circuit

Info

Publication number
JPH0716071B2
JPH0716071B2 JP10643084A JP10643084A JPH0716071B2 JP H0716071 B2 JPH0716071 B2 JP H0716071B2 JP 10643084 A JP10643084 A JP 10643084A JP 10643084 A JP10643084 A JP 10643084A JP H0716071 B2 JPH0716071 B2 JP H0716071B2
Authority
JP
Japan
Prior art keywords
semiconductor light
light emitting
current
emitting element
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP10643084A
Other languages
Japanese (ja)
Other versions
JPS60250683A (en
Inventor
優 中村
洋一 小倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10643084A priority Critical patent/JPH0716071B2/en
Publication of JPS60250683A publication Critical patent/JPS60250683A/en
Publication of JPH0716071B2 publication Critical patent/JPH0716071B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明は光送信機の分野に属し、高速負帰還による半導
体発光素子の出力安定化方式に関するものである。
Description: TECHNICAL FIELD The present invention relates to the field of optical transmitters and relates to a method for stabilizing output of a semiconductor light emitting device by high-speed negative feedback.

〔従来技術とその問題点〕[Prior art and its problems]

電気回路や電子回路上での負帰還回路は、半導体レーザ
や発光ダイオードなどの半導体発光素子の出力を安定化
する目的で種々使用されている。第1図は従来例を示し
たものである。半導体発光素子(11)の出力の一部をモ
ニタ用光検出器(12)で受光し、その信号を駆動部に帰
還する構成である。この時、半導体発光素子(11)や光
検出器(12)の動作は、その物理特性上、前者に於いて
は電流駆動を必要とし、後者に於いては光検出信号は電
流信号である。即ちこれら光半導体素子は電流モードで
動作を行う。しかるに一般的に回路の入力信号は電圧性
入力信号源(17)からの電圧性信号である為に、半導体
発光素子出力に負帰還を施す場合第1図中に示すごとく
電圧増幅器(13)により電圧増幅した後に電圧・電流変
換して発光素子を駆動する為の電圧・電流変換器(14)
を設け、さらに光検出信号を電圧信号に変換する電流・
電圧変換器(16)と電圧増幅器(15)を負帰還ループ内
に有している。又ループ帯域は高々数KHzであるが半導
体発光素子の出力変化を低速領域で安定化させ得る、即
ち温度変化等に追従させるには十分であり、現在最も広
く使用されている方式である。
Negative feedback circuits on electric circuits and electronic circuits are used in various ways for the purpose of stabilizing the output of semiconductor light emitting devices such as semiconductor lasers and light emitting diodes. FIG. 1 shows a conventional example. A part of the output of the semiconductor light emitting element (11) is received by the monitor photodetector (12), and the signal is fed back to the drive section. At this time, the operation of the semiconductor light emitting element (11) and the photodetector (12) requires current drive in the former case, and the photodetection signal is a current signal in the latter case due to its physical characteristics. That is, these optical semiconductor elements operate in the current mode. However, since the input signal of the circuit is generally the voltage signal from the voltage input signal source (17), when negative feedback is applied to the output of the semiconductor light emitting element, the voltage amplifier (13) is used as shown in FIG. Voltage-current converter for driving light-emitting element by voltage-current conversion after voltage amplification (14)
And a current for converting the light detection signal to a voltage signal.
It has a voltage converter (16) and a voltage amplifier (15) in a negative feedback loop. The loop bandwidth but is most several KH z can stabilize the output variation of the semiconductor light-emitting device in the low-speed region, that is, sufficient to follow a temperature change or the like, a method that is most widely used.

近時、半導体発光素子に高速に負帰還を施そうとする試
み(FAST−APC)がある。それは特にアナログ信号伝送
に於いて問題となる発光素子の強度歪、位相歪をこのFA
ST−APCを用いて軽減させようとするものである。この
時例えば信号帯域幅4MHzのビデオ信号に負帰還を施そ
うとするとループ帯域も同程度の広帯域性を必要とされ
ることから、負帰還構成の見直しや高速化が必要とされ
る。
Recently, there has been an attempt (FAST-APC) to provide negative feedback to a semiconductor light emitting device at high speed. It is the FA that causes the intensity distortion and phase distortion of the light emitting element, which is a problem especially in analog signal transmission.
It is intended to reduce it by using ST-APC. Loop bandwidth when you Hodokoso negative feedback to the video signal at this time for example signal bandwidth 4 mH z from being required the same degree of broadband performance is required review and speed of the negative feedback configuration.

〔発明の目的〕[Object of the Invention]

本発明は上記問題点を考慮してなされたもので、目的と
するところは、半導体発光素子の高速負帰還に最も適し
た回路構成を提供するものである。
The present invention has been made in consideration of the above problems, and an object thereof is to provide a circuit configuration most suitable for high-speed negative feedback of a semiconductor light emitting device.

[発明の概要] 本発明は、半導体発光素子と、この半導体発光素子の出
力光の一部を検出電流として出力する光検出器と、電圧
性入力信号を電流性信号に変換する電圧・電流変換器
と、この電圧・電流変換器及び前記光検出器に入力側が
電気的に接続され、且つ出力側が前記半導体発光素子に
電気的に接続された低入力インピーダンスの電流増幅器
とを具備し、前記光検出器と前記低入力インピーダンス
の電流増幅器の入力側との間に電流増幅器を設けないこ
とを特徴とする半導体発光素子出力安定化回路を提供す
るものである。
SUMMARY OF THE INVENTION The present invention relates to a semiconductor light emitting element, a photodetector for outputting a part of output light of the semiconductor light emitting element as a detection current, and a voltage / current conversion for converting a voltage input signal into a current signal. And a low-input-impedance current amplifier whose input side is electrically connected to the voltage / current converter and the photodetector, and whose output side is electrically connected to the semiconductor light-emitting element. There is provided a semiconductor light emitting device output stabilizing circuit characterized in that no current amplifier is provided between the detector and the input side of the low input impedance current amplifier.

[発明の効果] 本発明によれば、高速で高利得の負帰還ループが構成で
き高品質な光伝送が可能となるばかりか、その回路構成
は非常に簡易であることからIC化も容易となり、安価な
光送信部を提供できる。
[Advantages of the Invention] According to the present invention, not only a high-speed and high-gain negative feedback loop can be configured to enable high-quality optical transmission, but also its circuit configuration is very simple, which facilitates IC integration. Thus, an inexpensive optical transmitter can be provided.

〔発明の実施例〕 以下、本発明を実施例を用いて詳細に説明する。第2図
は本発明の構成図を示すものである。本発明の特徴はル
ープ内には極力構成要素を減らすように努めかつ低歪化
を図つたことである。即ち電圧電流変換器(26)を電圧
性入力信号源(27)と信号加算器(28)との間に設けて
ループ外に出すことで第1図に於けるループ内の電圧・
電流変換器(14)と電流・電圧変換器(16)を必要とせ
ず、ループ内素子動作を全て電流性動作とした。又光検
出器(22)出力と信号加算器(28)間には電流増幅器を
設けず、光検出器(22)での検出電流を直接電圧・電流
変換器(26)出力と電流加算した。これは半導体発光素
子(21)から加算器(28)に至る帰還路上には周波数特
性のある素子を配置せずに、閉ループの周波数特性を良
くする配慮からである。更に電流加算器(28)と半導体
発光素子(21)間の電流増幅器(29)は特に低入力イン
ピーダンス型電流増幅器とした。なぜなら第3図に示す
本構成図の実回路例は半導体発光素子(31)、光検出器
(32)を有しており電圧・電流変換素子としては、最も
一般的なエミッタ接地増幅器(36)電流加算器として
は、信号の結線だけの加算器(38)、さらに低入力イン
ピーダンスの電流増幅器としてはベース接地を初段とす
る増幅器(39)を考慮した場合トランジスタの特性上電
圧・電流変換器としてのトランジスタのコレクタ端子の
電圧は入力信号により変化する。従つて電流増幅器の入
力インピーダンスがもし高ければ、そこに電圧信号に帰
因する不要な信号が発生しループとして誤動作の原因と
なる場合がある。
Examples of the Invention Hereinafter, the present invention will be described in detail with reference to examples. FIG. 2 shows a block diagram of the present invention. A feature of the present invention is to make an effort to reduce the components in the loop as much as possible and to reduce the distortion. That is, the voltage-current converter (26) is provided between the voltage input signal source (27) and the signal adder (28) and is output outside the loop, so that the voltage in the loop in FIG.
The current converter (14) and current / voltage converter (16) are not required, and all the element operations in the loop are current-driven. No current amplifier was provided between the output of the photodetector (22) and the signal adder (28), and the current detected by the photodetector (22) was added directly to the output of the voltage-current converter (26). This is because consideration is given to improving the frequency characteristics of the closed loop without disposing elements having frequency characteristics on the feedback path from the semiconductor light emitting element (21) to the adder (28). Further, the current amplifier (29) between the current adder (28) and the semiconductor light emitting element (21) is a low input impedance type current amplifier. This is because the actual circuit example of this configuration shown in FIG. 3 has a semiconductor light emitting element (31) and a photodetector (32), and is the most common emitter-grounded amplifier (36) as a voltage / current conversion element. Considering an adder (38) that only connects signals as a current adder, and an amplifier (39) that has a grounded base as the first stage as a current amplifier with a low input impedance. The voltage at the collector terminal of the transistor changes with the input signal. Therefore, if the input impedance of the current amplifier is high, an unnecessary signal due to the voltage signal may be generated there, which may cause a malfunction as a loop.

この場合どの程度の低入力インピーダンスが必要かと言
えば光検出器や、電圧電流変換用トランジスタの入力イ
ンピーダンスよりも十分に小さい値が要求され、回路的
にはベース接地回路の入力インピーダンス程度である。
しかしながらベース接地回路は電流利得を持たない為、
後段にエミツタ接地回路を置き、ここで電流増幅を行
う。ベース接地回路の代りにエミツタ接地回路を使う時
は、その入力インピーダンスはベース接地回路のそれよ
りも電流増幅率分大きいため使用できない。しかしコレ
クタからベースへ帰還を施した例えば第4図に示す並列
帰還型増幅器(49)による電流増幅器であれば本発明の
主旨に合致する。
In this case, what low input impedance is required is a value sufficiently smaller than the input impedances of the photodetector and the voltage-current conversion transistor, and the circuit is about the input impedance of the grounded base circuit.
However, the grounded base circuit has no current gain,
An emitter grounding circuit is placed in the latter stage, and current amplification is performed here. When the emitter grounding circuit is used instead of the base grounding circuit, its input impedance cannot be used because it is larger than that of the base grounding circuit by the current amplification factor. However, a current amplifier, for example, a parallel feedback type amplifier (49) shown in FIG.

その他第5図に示すような、半導体発光素子を駆動する
のにループ外にもう1個のトランジスタ(60)を配置
し、ループ内には誤差信号分のみが伝わるような方式
(特公昭58−41675)に対しても本発明の回路構成は適
用できる。又回路構成素子はトランジスタに限らずFET
であつても良いことは明らかである。
In addition, as shown in FIG. 5, another transistor (60) is arranged outside the loop to drive the semiconductor light emitting device, and only the error signal is transmitted in the loop (Japanese Patent Publication No. 58- 41675) can also apply the circuit configuration of the present invention. Also, the circuit components are not limited to transistors, but FETs
It is clear that this is also possible.

尚、第3図乃至第5図における同一部分には同一符号を
付している。
The same parts in FIGS. 3 to 5 are designated by the same reference numerals.

【図面の簡単な説明】[Brief description of drawings]

第1図は従来例を示す図、第2図は本発明の一実施例を
示す図、第3図乃至第5図は第2図に示す実施例の具体
的回路図である。 11,21,31……半導体発光素子 12,22,32……光検出器 16,26,36……電圧・電流変換器 17,27,37……電圧性入力信号源 18,28,38……電流加算器 19,29,39,49……低入力インピーダンス電流増幅器
FIG. 1 is a diagram showing a conventional example, FIG. 2 is a diagram showing an embodiment of the present invention, and FIGS. 3 to 5 are specific circuit diagrams of the embodiment shown in FIG. 11,21,31 …… Semiconductor light emitting device 12,22,32 …… Photodetector 16,26,36 …… Voltage / current converter 17,27,37 …… Voltage input signal source 18,28,38… … Current adder 19,29,39,49 …… Low input impedance current amplifier

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】半導体発光素子と、この半導体発光素子の
出力光の一部を検出電流として出力する光検出器と、電
圧性入力信号を電流性信号に変換する電圧・電流変換器
と、この電圧・電流変換器及び前記光検出器に入力側が
電気的に接続され、且つ出力側が前記半導体発光素子に
電気的に接続された低入力インピーダンスの電流増幅器
とを具備し、前記光検出器と前記低入力インピーダンス
の電流増幅器の入力側との間に電流増幅器を設けないこ
とを特徴とする半導体発光素子出力安定化回路。
1. A semiconductor light emitting device, a photodetector for outputting a part of output light of the semiconductor light emitting device as a detection current, a voltage-current converter for converting a voltage input signal into a current signal, and A low-input-impedance current amplifier whose input side is electrically connected to the voltage / current converter and the photodetector, and whose output side is electrically connected to the semiconductor light-emitting element; and A semiconductor light emitting element output stabilizing circuit, in which a current amplifier is not provided between the input side of a current amplifier having a low input impedance and the input side.
【請求項2】前記電圧・電流変換器はエミッタ接地のト
ランジスタからなりベース側に電圧性入力信号源が接続
され、コレクタ側に前記光検出器及び前記低入力インピ
ーダンスの電流増幅器の入力側が接続されていることを
特徴とする特許請求の範囲第1項記載の半導体発光素子
出力安定化回路。
2. The voltage / current converter comprises a grounded-emitter transistor, a base side is connected to a voltage input signal source, and a collector side is connected to the photodetector and the input side of the low input impedance current amplifier. The semiconductor light emitting element output stabilizing circuit according to claim 1, wherein
【請求項3】前記低入力インピーダンスの電流増幅器は
ベース接地のトランジスタからなりエミッタ側は前記電
圧・電流変換器を構成するトランジスタのコレクタ側及
び前記光検出器の片電極側に各接続され、コレクタ側は
前記半導体発光素子に電気的に接続されていることを特
徴とする特許請求の範囲第1項若しくは第2項記載の半
導体発光素子出力安定化回路。
3. The low input impedance current amplifier is composed of a base-grounded transistor, and the emitter side is connected to the collector side of the transistor forming the voltage-current converter and the one electrode side of the photodetector. The semiconductor light emitting element output stabilizing circuit according to claim 1 or 2, wherein the side is electrically connected to the semiconductor light emitting element.
【請求項4】前記低入力インピーダンスの電流増幅器は
並列帰還型増幅器であることを特徴とする特許請求の範
囲第1項記載の半導体発光素子出力安定化回路。
4. The semiconductor light emitting element output stabilizing circuit according to claim 1, wherein the low input impedance current amplifier is a parallel feedback type amplifier.
JP10643084A 1984-05-28 1984-05-28 Semiconductor light emitting element output stabilization circuit Expired - Lifetime JPH0716071B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10643084A JPH0716071B2 (en) 1984-05-28 1984-05-28 Semiconductor light emitting element output stabilization circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10643084A JPH0716071B2 (en) 1984-05-28 1984-05-28 Semiconductor light emitting element output stabilization circuit

Publications (2)

Publication Number Publication Date
JPS60250683A JPS60250683A (en) 1985-12-11
JPH0716071B2 true JPH0716071B2 (en) 1995-02-22

Family

ID=14433438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10643084A Expired - Lifetime JPH0716071B2 (en) 1984-05-28 1984-05-28 Semiconductor light emitting element output stabilization circuit

Country Status (1)

Country Link
JP (1) JPH0716071B2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2277492A1 (en) * 1974-07-05 1976-01-30 Thomson Csf LIGHTING DIODE CONTROL DEVICE AND OPTICAL COMMUNICATION SYSTEM INCLUDING SUCH A DEVICE

Also Published As

Publication number Publication date
JPS60250683A (en) 1985-12-11

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