JPH07176399A - Plasma processing device - Google Patents
Plasma processing deviceInfo
- Publication number
- JPH07176399A JPH07176399A JP6257979A JP25797994A JPH07176399A JP H07176399 A JPH07176399 A JP H07176399A JP 6257979 A JP6257979 A JP 6257979A JP 25797994 A JP25797994 A JP 25797994A JP H07176399 A JPH07176399 A JP H07176399A
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- Japan
- Prior art keywords
- plasma
- processed
- substrate
- power supply
- supply device
- Prior art date
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- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】
【目的】 プラズマ密度を高くして効率的な処理を行な
うことができ、また、空間的なプラズマ密度の分布を制
御することができ、空間的に均一なプラズマにより均一
な処理を行なうことのできるプラズマ処理装置を提供す
る。
【構成】 処理容器１１内の上部には、多数の棒状のプ
ラズマ生起用電極１２が絶縁性の多孔質体１３に保持さ
れ吊設されており、これらの棒状のプラズマ生起用電極
１２は、接地されているものと、電源装置１４に接続さ
れているものがある。棒状のプラズマ生起用電極１２に
は、電源装置１４から位相がずれた高周波が印加され
る。
(57) [Abstract] [Purpose] The plasma density can be increased for efficient processing, and the spatial distribution of the plasma density can be controlled. A plasma processing apparatus capable of performing processing is provided. [Structure] A large number of rod-shaped plasma generating electrodes 12 are suspended from an upper portion of a processing container 11 while being held by an insulating porous body 13, and these rod-shaped plasma generating electrodes 12 are grounded. Some of these are connected to the power supply device 14. The rod-shaped plasma generating electrode 12 is applied with a high frequency wave out of phase from the power supply device 14.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体ウエハ等の被処
理基板上にＣＶＤ、エッチング、その他の表面処理を行
なうプラズマ処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for performing CVD, etching and other surface treatments on a substrate to be processed such as a semiconductor wafer.
【０００２】[0002]
【従来の技術】一般にプラズマ処理装置は、半導体装置
の製造等に用いられ、半導体ウエハ等の被処理基板の表
面処理を行なう。2. Description of the Related Art Generally, a plasma processing apparatus is used for manufacturing a semiconductor device or the like and performs surface treatment of a substrate to be processed such as a semiconductor wafer.
【０００３】図５は、このようなプラズマ処理装置の例
として反応性イオンエッチングを行なうプラズマ処理装
置を示すもので、処理容器１内に配置された細孔２ａを
設けられたアノ―ド電極２と、被処理基板３および絶縁
膜４を配置されたカソ―ド電極５とから構成されるプラ
ズマ生起用電極の間には、整合回路を備えた電源装置６
から高周波電圧が印加される。FIG. 5 shows a plasma processing apparatus for carrying out reactive ion etching as an example of such a plasma processing apparatus. An anode electrode 2 provided with pores 2a arranged in a processing container 1 is shown in FIG. And a plasma generation electrode composed of a substrate 3 to be processed and a cathode electrode 5 on which an insulating film 4 is arranged, and a power supply device 6 provided with a matching circuit.
A high frequency voltage is applied from the.
【０００４】そして、導入口７から導入され、排出口８
から排出されるＳＦ6 、ＣＣｌ4 、ＮＦ3 、Ｈｅ等の反
応ガスは、図示矢印のように流れ、アノ―ド電極２と、
カソ―ド電極５との間でプラズマ９とされる。Then, the gas is introduced from the inlet 7 and is discharged from the outlet 8.
The reaction gases such as SF 6 , CCl 4 , NF 3 , and He discharged from the flow through as shown by the arrows in the figure, and the anode electrode 2 and
Plasma 9 is formed between the cathode electrode 5 and the cathode electrode 5.
【０００５】また、プラズマと被処理基板３との間に
は、高電界部１０（プラズマシ―ス）が形成され、電気
的に中性でないイオンは、このプラズマシ―スによって
加速され、被処理基板３上に方向性をもって衝突し、エ
ッチングが行なわれる。Further, a high electric field portion 10 (plasma sheath) is formed between the plasma and the substrate 3 to be treated, and the electrically non-neutral ions are accelerated by this plasma sheath, and the substrate to be treated 3 is accelerated. 3 is directionally collided with and etched.
【０００６】また、特公昭６１−６５３６号等に示され
たプラズマ処理装置のように、アノ―ド電極とカソ―ド
電が極被処理基板の上方に対向して配置されたプラズマ
生起用電極を備えたプラズマ処理装置もある。In addition, as in the plasma processing apparatus disclosed in Japanese Patent Publication No. 61-6536, an electrode for plasma generation in which an anode electrode and a cathode electrode are arranged so as to face each other above a substrate to be processed. There is also a plasma processing apparatus provided with.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上述の
従来のプラズマ処理装置では、印加電圧の増大およびプ
ラズマ生起用電極間距離の短縮などによりプラズマ密度
を高くすると、イオンの被処理基板上への衝突のエネル
ギ―も高くなり、被処理基板に損傷を与えるため、プラ
ズマ密度を高くすることができないという問題がある。
また、電界や反応ガスの流れ等により、空間的なプラズ
マ密度の分布に不均一が生じ、エッチングレ―トが不均
一となるが、このようなプラズマ密度の空間的な分布の
制御を行なうことができないという問題がある。However, in the above-mentioned conventional plasma processing apparatus, when the plasma density is increased by increasing the applied voltage and shortening the distance between the electrodes for plasma generation, the ions collide with the substrate to be processed. However, the energy of the plasma becomes high and the substrate to be processed is damaged, so that the plasma density cannot be increased.
In addition, because the spatial distribution of plasma density becomes non-uniform due to the electric field and the flow of the reaction gas, the etching rate becomes non-uniform, but such spatial distribution of plasma density should be controlled. There is a problem that you can not.
【０００８】本発明はかかる従来の問題に対処してなさ
れたもので、プラズマ密度を高くして効率的な処理を行
なうことができ、また、空間的なプラズマ密度の分布を
制御することができ、空間的に均一なプラズマにより均
一な処理を行なうことのできるプラズマ処理装置を提供
しようとするものである。The present invention has been made in response to such a conventional problem, and it is possible to increase the plasma density to perform efficient processing, and to control the spatial distribution of the plasma density. An object of the present invention is to provide a plasma processing apparatus capable of performing uniform processing with spatially uniform plasma.
【０００９】[0009]
【課題を解決するための手段】すなわち本発明のプラズ
マ処理装置は、被処理基板を収容する処理容器と、この
処理容器内に配置された前記被処理基板を載置する載置
台と、前記処理容器内の空間に配置された対をなす複数
組の棒状のプラズマ生起用電極と、これら各対のプラズ
マ生起用電極に位相の異なった電圧を印加してプラズマ
を生起させる電源装置とを備え、前記複数組のプラズマ
生起用電極によって生起されたプラズマにより被処理基
板の処理を行なうことを特徴とする。That is, a plasma processing apparatus according to the present invention includes a processing container for accommodating a substrate to be processed, a mounting table for mounting the substrate to be processed arranged in the processing container, and the processing. A plurality of pairs of rod-shaped plasma generation electrodes arranged in a space in the container, and a power supply device for generating plasma by applying different phase voltages to the plasma generation electrodes of each pair, It is characterized in that the substrate to be processed is processed by the plasma generated by the plurality of sets of plasma generating electrodes.
【００１０】また、本発明のプラズマ処理装置は、被処
理基板を収容する処理容器と、この処理容器内に配置さ
れた前記被処理基板を載置する載置台と、この載置台に
高周波の電圧を印加する電源装置と、前記処理容器内の
空間に配置された対をなす複数組の棒状のプラズマ生起
用電極と、これら各対のプラズマ生起用電極に位相の異
なった電圧を印加してプラズマを生起させる電源装置と
を備え、前記複数組のプラズマ生起用電極によって生起
されたプラズマにより被処理基板の処理を行なうことを
特徴とする。Further, in the plasma processing apparatus of the present invention, a processing container for accommodating the substrate to be processed, a mounting table for mounting the processing substrate arranged in the processing container, and a high frequency voltage applied to the mounting table. A pair of rod-shaped plasma-generating electrodes that form a pair and are disposed in the space inside the processing container, and apply a different phase voltage to each pair of plasma-generating electrodes to generate plasma. And a power supply device for generating a substrate, and processing the substrate to be processed by the plasma generated by the plurality of sets of plasma generating electrodes.
【００１１】[0011]
【作 用】本発明のプラズマ処理装置では、複数組配置
された棒状のプラズマ生起用電極間にプラズマが生起さ
れるので、棒状のプラズマ生起用電極の配置、間隔等を
調節することによって、プラズマ密度の空間的分布を細
かく制御することができる。また、これらのプラズマ生
起用電極間に例えばπ／２位相のずれた電圧など位相の
異なった電圧が印加されるので、これらの電極対間で位
相のずれた電界が生じ、プラズマが回転しこの回転によ
り、プラズマが均一化される。また、印加される電圧等
を変えることにより、プラズマ密度およびプラズマ密度
の空間的分布も制御することができる。[Operation] In the plasma processing apparatus of the present invention, since plasma is generated between a plurality of rod-shaped plasma generation electrodes arranged in a plurality of sets, the plasma can be generated by adjusting the arrangement, intervals, etc. of the rod-shaped plasma generation electrodes. The spatial distribution of density can be finely controlled. Further, since voltages having different phases, such as a voltage having a phase difference of π / 2, are applied between these plasma generation electrodes, an electric field having a phase difference is generated between the electrode pairs, and the plasma is rotated. The rotation makes the plasma uniform. Further, the plasma density and the spatial distribution of the plasma density can be controlled by changing the applied voltage and the like.
【００１２】また、請求項３、４記載のプラズマ処理装
置では、上記構成に加えてさらに被処理基板が載置され
る載置台に高周波の電圧を印加する電源装置を備えてい
る。したがって、被処理基板の被処理面の電位を変動さ
せて、プラズマ中からイオンと電子を方向性を持って交
互に被処理基板に入射させ、被処理基板に電荷が蓄積さ
れることを防止することができ、被処理面の電位を、イ
オンが方向性を持って十分大きな運動エネルギーで入射
できるレベルに維持して、エッチングをより高速に行う
ことができる。また、プラズマを発生させる電源装置と
は独立に、電源装置の電圧を設定して衝突するイオンの
運動エネルギーを制御できるので、目的とするプラズマ
処理例えばエッチング処理に最適なイオン加速エネルギ
ーを選ぶことができる。In addition to the above configuration, the plasma processing apparatus according to the third and fourth aspects further includes a power supply device for applying a high-frequency voltage to the mounting table on which the substrate to be processed is mounted. Therefore, the potential of the surface to be processed of the substrate to be processed is changed so that ions and electrons from the plasma are made incident on the substrate to be processed alternately with directionality, and the accumulation of charges on the substrate to be processed is prevented. Therefore, the potential of the surface to be processed can be maintained at a level at which ions can be directed and can be injected with sufficiently large kinetic energy, and etching can be performed at a higher speed. In addition, since it is possible to set the voltage of the power supply device and control the kinetic energy of the colliding ions independently of the power supply device that generates plasma, it is possible to select the optimum ion acceleration energy for the target plasma treatment, for example, etching treatment. it can.
【００１３】[0013]
【実施例】以下本発明装置の実施例を図面を参照して説
明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the device of the present invention will be described below with reference to the drawings.
【００１４】図１はプラズマ処理装置として半導体ウエ
ハ等の被処理基板上に反応性イオンエッチングを行なう
プラズマ処理装置を示すもので、この実施例のプラズマ
処理装置では、アルミ等からなり内部をアルマイトで処
理された処理容器１１内の上部には、ケイ素化炭素等か
らなる多数の棒状のプラズマ生起用電極１２が絶縁性の
多孔質体１３に保持され吊設されており、これらの棒状
のプラズマ生起用電極１２は、接地されているものと、
電源装置１４に接続されているものがある。FIG. 1 shows a plasma processing apparatus for performing reactive ion etching on a substrate to be processed such as a semiconductor wafer as a plasma processing apparatus. In the plasma processing apparatus of this embodiment, the inside is made of aluminum or the like and the inside is made of alumite. A large number of rod-shaped plasma generating electrodes 12 made of siliconized carbon or the like are held and suspended by an insulating porous body 13 in the upper portion of the treated processing container 11, and these rod-shaped plasma generating electrodes 12 are suspended. The active electrode 12 is grounded,
Some are connected to the power supply 14.
【００１５】なおこの実施例では、これらの棒状のプラ
ズマ生起用電極１２は、図２に示すように接続されてい
る。すなわち棒状のプラズマ生起用電極１２ａは接地さ
れており、棒状のプラズマ生起用電極１２ｂは電源装置
１４ｂに、棒状のプラズマ生起用電極１２ｃは電源装置
１４ｃに接続されている。そして、電源装置１４ｂと電
源装置１４ｃは、それぞれ位相がπ／２ずれた周波数1
3.56MHzの高周波を印加する。In this embodiment, the rod-shaped plasma generating electrodes 12 are connected as shown in FIG. That is, the rod-shaped plasma generation electrode 12a is grounded, the rod-shaped plasma generation electrode 12b is connected to the power supply device 14b, and the rod-shaped plasma generation electrode 12c is connected to the power supply device 14c. The power supply device 14b and the power supply device 14c have a frequency 1 with a phase difference of π / 2.
Apply a high frequency of 3.56MHz.
【００１６】また、これらの棒状のプラズマ生起用電極
１２の下方には、たとえば周波数400KHz程度の周波数の
電圧を印加する電源装置１５に接続され、被処理基板１
６が載置されるサセプタ１７が配置されている。Below the rod-shaped plasma generating electrodes 12, a power supply device 15 for applying a voltage having a frequency of, for example, about 400 KHz is connected, and the substrate 1 to be processed 1 is connected.
A susceptor 17 on which 6 is placed is arranged.
【００１７】ここで、サセプタ１７に電源装置１５から
高周波電圧が印加されることにより、電源装置１５を使
用しない場合に較べて、次のような効果を得ることがで
きる。 すなわち、電源装置１５からの高周波電圧によ
り、サセプタ１７上に載置された被処理基板１６の被処
理面の電位が上下動するので、これによって、プラズマ
化された反応性ガス中から、イオンと電子が方向性を持
って交互に被処理基板１６に入射する。したがって、被
処理基板１６に電荷が蓄積されることがなく、被処理面
の電位を、イオンが方向性を持って十分大きな運動エネ
ルギーで入射できるレベルに維持することができ、エッ
チングをより高速に行うことができる。By applying a high frequency voltage from the power supply device 15 to the susceptor 17, the following effects can be obtained as compared with the case where the power supply device 15 is not used. That is, the high-frequency voltage from the power supply device 15 causes the potential of the surface to be processed of the substrate 16 to be processed placed on the susceptor 17 to move up and down, so that ions are generated from the reactive gas turned into plasma. The electrons alternately enter the substrate 16 to be processed with directivity. Therefore, charges are not accumulated on the substrate 16 to be processed, and the potential of the surface to be processed can be maintained at a level at which ions can be directed and can be injected with sufficiently large kinetic energy, and etching can be performed at higher speed. It can be carried out.
【００１８】また、プラズマを発生させる電源装置１４
とは独立に、電源装置１５の電圧を設定して衝突するイ
オンの運動エネルギーを制御できるので、目的とするプ
ラズマ処理例えばエッチング処理に最適なイオン加速エ
ネルギーを電源装置１５によって選ぶことができる。Further, a power supply device 14 for generating plasma
Independently of this, the voltage of the power supply device 15 can be set to control the kinetic energy of the colliding ions, so that the power supply device 15 can select the optimum ion acceleration energy for the target plasma treatment, for example, etching treatment.
【００１９】そして、導入口１８から導入され排出口１
９から排出されるＳＦ6 、ＮＦ3 、Ｆ3 、ＣＣｌ4 、Ｃ
Ｃｌ2 Ｆ2 等の反応ガスは、棒状のプラズマ生起用電極
１２間でプラズマとされ、電圧を印加されたサセプタ１
７上の被処理基板１６へ方向性をもって衝突し、エッチ
ングが行なわれる。Then, it is introduced from the inlet 18 and the outlet 1
SF 6 , NF 3 , F 3 , CCl 4 , C discharged from 9
The reaction gas such as Cl 2 F 2 is made into plasma between the rod-shaped plasma generation electrodes 12, and a voltage is applied to the susceptor 1.
Etching is performed by directionally colliding with the substrate 16 to be processed on the substrate 7.
【００２０】このとき、位相がπ／２異なる高周波電圧
を印加された電極対内の空間では、位相がπ／２異なる
電界が生じるので、電子はこの空間内から逃げることな
く、この空間内で回転し、反応ガスと衝突することによ
り、高いイオン化率が得られる。また、電子の回転運動
により、ブラズマも回転し、均一化される。At this time, in the space within the electrode pair to which the high-frequency voltage having a phase difference of π / 2 is applied, an electric field having a phase difference of π / 2 is generated, so that the electrons do not escape from this space but rotate in this space. However, a high ionization rate can be obtained by colliding with the reaction gas. In addition, due to the rotational movement of the electrons, the plasma also rotates and is made uniform.
【００２１】図３は、棒状のプラズマ生起用電極１２に
よって印加する電圧を変化させ、プラズマ密度の空間的
な分布の制御を行なう例を示すもので、棒状のプラズマ
生起用電極１２ａは接地されており、棒状のプラズマ生
起用電極１２ｄ、１２ｅは、それぞれ位相がπ／２ずれ
た周波数13.56MHzの高周波を印加する電源装置１４ｄ、
１４ｅにそれぞれ可変抵抗２０を介して接続されてお
り、可変抵抗２０を調節し、たとえばプラスマ密度が低
くなる領域に配置された棒状のプラズマ生起用電極１２
ｄ、１２ｅに印加する電圧を高くし、プラスマ密度が高
くなる領域に配置された棒状のプラズマ生起用電極１２
ｄ、１２ｅに印加する電圧を低くする等、棒状のプラズ
マ生起用電極１２ｄ、１２ｅ毎に印加する電圧を変化さ
せ、プラズマ密度の空間的な分布を制御する。FIG. 3 shows an example in which the voltage applied by the rod-shaped plasma generation electrode 12 is changed to control the spatial distribution of the plasma density, and the rod-shaped plasma generation electrode 12a is grounded. The rod-shaped plasma generation electrodes 12d and 12e are provided with a power supply device 14d that applies a high frequency of 13.56 MHz with a phase difference of π / 2, respectively.
14e connected to each of the electrodes via the variable resistance 20, and adjusting the variable resistance 20, for example, a rod-shaped plasma generating electrode 12 arranged in a region where the plasma density becomes low.
The voltage applied to d and 12e is increased, and the rod-shaped plasma generation electrode 12 is arranged in a region where the plasma density is increased.
The voltage applied to each of the rod-shaped plasma generation electrodes 12d and 12e is changed by, for example, lowering the voltage applied to d and 12e to control the spatial distribution of the plasma density.
【００２２】図４は、コンデンサを用いて棒状のプラズ
マ生起用電極１２によって印加する電圧の位相を変化さ
せた例を示すもので、棒状のプラズマ生起用電極１２ａ
は接地されており、周波数13.56MHzの高周波を印加する
電源装置１４ｆに接続された棒状のプラズマ生起用電極
１２ｆと、この電源装置１４ｆにコンデンサ２１を介し
て接続された棒状のプラズマ生起用電極１２ｇとの間に
は、印加される電圧に位相の差が生じる。FIG. 4 shows an example in which the phase of the voltage applied by the rod-shaped plasma generation electrode 12 is changed by using a capacitor, and the rod-shaped plasma generation electrode 12a is used.
Is grounded and has a rod-shaped plasma generation electrode 12f connected to a power supply device 14f for applying a high frequency of 13.56 MHz, and a rod-shaped plasma generation electrode 12g connected to this power supply device 14f via a capacitor 21. There is a phase difference in the applied voltage between and.
【００２３】すなわち、この実施例のプラズマ処理装置
では、複数組の棒状のプラズマ生起用電極１２を備え、
これらの棒状のプラズマ生起用電極１２によって生起さ
れたプラズマによって被処理基板１６上に処理を施すの
で、イオンの衝突エネルギ―を変化させることなくプラ
ズマ密度を任意に高くして効率的な処理を行なうことが
できる。That is, in the plasma processing apparatus of this embodiment, a plurality of rod-shaped plasma generating electrodes 12 are provided,
Since the substrate 16 to be processed is processed by the plasma generated by the rod-shaped plasma generating electrode 12, the plasma density is arbitrarily increased without changing the collision energy of the ions to perform the efficient processing. be able to.
【００２４】また棒状のプラズマ生起用電極１２によっ
て印加電圧、周波数、位相等を任意に変更し、プラズマ
密度の空間的な分布を制御することができ、均一なプラ
ズマによって均一な処理を行なうことができる。Further, the applied voltage, frequency, phase, etc. can be arbitrarily changed by the rod-shaped plasma generating electrode 12, the spatial distribution of the plasma density can be controlled, and uniform processing can be performed by uniform plasma. it can.
【００２５】なお、この実施例では被処理基板１６上に
反応性イオンエッチングを行なうプラズマ処理装置につ
いて説明したが、本発明のプラズマ処理装置はかかる実
施例に限定されるものではなく、たとえばプラズマＣＶ
Ｄその他の表面処理を行なうプラズマ処理装置に適用す
ることができることは勿論である。Although the plasma processing apparatus for performing the reactive ion etching on the substrate 16 to be processed has been described in this embodiment, the plasma processing apparatus of the present invention is not limited to this embodiment, and for example, plasma CV may be used.
It is needless to say that the present invention can be applied to a plasma processing apparatus that performs other surface treatments.
【００２６】[0026]
【発明の効果】上述のように本発明のプラズマ処理装置
では、プラズマ密度を高くして効率的な処理を行なうこ
とができる。また、空間的なプラズマ密度の分布を棒状
のプラズマ生起用電極により棒の長手方向に沿ってプラ
ズマを生起させることができるので棒状電極の処理容器
内での配置を変えることにより、細かく制御することが
でき、空間的に均一なプラズマにより均一な処理を行な
うことができる。As described above, in the plasma processing apparatus of the present invention, it is possible to increase the plasma density and perform efficient processing. In addition, the spatial distribution of plasma density can be finely controlled by changing the arrangement of the rod-shaped electrodes in the processing container because plasma can be generated along the longitudinal direction of the rod by the rod-shaped plasma generation electrode. As a result, it is possible to perform a uniform treatment with a spatially uniform plasma.
【００２７】また、第２の発明のプラズマ処理装置で
は、上記効果に加えて、さらに、被処理基板に電荷が蓄
積されることを防止することができ、エッチングをより
高速に行うことができるとともに、目的とするプラズマ
処理例えばエッチング処理に最適なイオン加速エネルギ
ーを選ぶことができる。Further, in the plasma processing apparatus of the second invention, in addition to the above effects, it is possible to prevent the accumulation of electric charges on the substrate to be processed, and it is possible to perform etching at a higher speed. It is possible to select the optimum ion acceleration energy for the target plasma treatment, for example, the etching treatment.
【図１】本発明の一実施例のプラズマ処理装置を示す縦
断面図FIG. 1 is a vertical sectional view showing a plasma processing apparatus according to an embodiment of the present invention.
【図２】第１図の配線図FIG. 2 is a wiring diagram of FIG.
【図３】第１図の他の配線例を示す配線図FIG. 3 is a wiring diagram showing another wiring example of FIG.
【図４】第１図の他の配線例を示す配線図FIG. 4 is a wiring diagram showing another wiring example of FIG.
【図５】従来のプラズマ処理装置を示す縦断面図FIG. 5 is a vertical sectional view showing a conventional plasma processing apparatus.
１１ 処理容器 １２ 棒状のプラズマ生起用電極 １４ 電源装置 １６ 被処理基板 11 processing container 12 rod-shaped plasma generation electrode 14 power supply device 16 substrate to be processed
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/205 21/3065 21/31 Ｈ０１Ｌ 21/31 Ｃ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Internal reference number FI Technical indication H01L 21/205 21/3065 21/31 H01L 21/31 C
Claims (4)
載置台と、 前記処理容器内の空間に配置された対をなす複数組の棒
状のプラズマ生起用電極と、 これら各対のプラズマ生起用電極に位相の異なった電圧
を印加してプラズマを生起させる電源装置とを備え、 前記複数組のプラズマ生起用電極によって生起されたプ
ラズマにより被処理基板の処理を行なうことを特徴とす
るプラズマ処理装置。1. A processing container for accommodating a substrate to be processed, a mounting table for mounting the substrate to be processed arranged in the processing container, and a plurality of pairs arranged in a space inside the processing container. A rod-shaped plasma generation electrode, and a power supply device for generating plasma by applying voltages having different phases to each pair of the plasma generation electrodes, and the plasma generated by the plurality of sets of plasma generation electrodes. A plasma processing apparatus, characterized in that a substrate to be processed is processed by means of.
起用電極に位相の異なった電圧を印加してプラズマを生
起させプラズマ中の電子を回転運動させることを特徴と
する請求項１記載のプラズマ処理装置。2. The power supply device applies voltages having different phases to the pair of plasma generation electrodes to generate plasma to rotate electrons in the plasma. Plasma processing equipment.
載置台と、 この載置台に高周波の電圧を印加する電源装置と、 前記処理容器内の空間に配置された対をなす複数組の棒
状のプラズマ生起用電極と、 これら各対のプラズマ生起用電極に位相の異なった電圧
を印加してプラズマを生起させる電源装置とを備え、 前記複数組のプラズマ生起用電極によって生起されたプ
ラズマにより被処理基板の処理を行なうことを特徴とす
るプラズマ処理装置。3. A processing container for accommodating a substrate to be processed, a mounting table for mounting the processing substrate arranged in the processing container, a power supply device for applying a high-frequency voltage to the mounting table, and A plurality of pairs of rod-shaped plasma generation electrodes arranged in a space inside the processing container, and a power supply device for generating plasma by applying voltages having different phases to these pairs of plasma generation electrodes are provided. A plasma processing apparatus, wherein the substrate to be processed is processed by the plasma generated by the plurality of sets of plasma generating electrodes.
る電源装置は、前記各対のプラズマ生起用電極に位相の
異なった電圧を印加してプラズマを生起させプラズマ中
の電子を回転運動させることを特徴とする請求項３記載
のプラズマ処理装置。4. The power supply device for applying a voltage to the plasma generating electrodes applies voltages having different phases to the pair of plasma generating electrodes to generate plasma and rotate electrons in the plasma. The plasma processing apparatus according to claim 3, wherein:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6257979A JPH07176399A (en) | 1994-10-24 | 1994-10-24 | Plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6257979A JPH07176399A (en) | 1994-10-24 | 1994-10-24 | Plasma processing device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11699786A Division JPS62273731A (en) | 1986-05-21 | 1986-05-21 | Plasma processor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07176399A true JPH07176399A (en) | 1995-07-14 |
Family
ID=17313869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6257979A Pending JPH07176399A (en) | 1994-10-24 | 1994-10-24 | Plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07176399A (en) |
Cited By (36)
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|---|---|---|---|---|
| US5961793A (en) * | 1996-10-31 | 1999-10-05 | Applied Materials, Inc. | Method of reducing generation of particulate matter in a sputtering chamber |
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| US6077402A (en) * | 1997-05-16 | 2000-06-20 | Applied Materials, Inc. | Central coil design for ionized metal plasma deposition |
| US6103070A (en) * | 1997-05-14 | 2000-08-15 | Applied Materials, Inc. | Powered shield source for high density plasma |
| US6132566A (en) * | 1998-07-30 | 2000-10-17 | Applied Materials, Inc. | Apparatus and method for sputtering ionized material in a plasma |
| US6146508A (en) * | 1998-04-22 | 2000-11-14 | Applied Materials, Inc. | Sputtering method and apparatus with small diameter RF coil |
| US6190513B1 (en) | 1997-05-14 | 2001-02-20 | Applied Materials, Inc. | Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition |
| US6210539B1 (en) | 1997-05-14 | 2001-04-03 | Applied Materials, Inc. | Method and apparatus for producing a uniform density plasma above a substrate |
| US6217718B1 (en) | 1999-02-17 | 2001-04-17 | Applied Materials, Inc. | Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma |
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| US6235169B1 (en) | 1997-08-07 | 2001-05-22 | Applied Materials, Inc. | Modulated power for ionized metal plasma deposition |
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| US6254737B1 (en) | 1996-10-08 | 2001-07-03 | Applied Materials, Inc. | Active shield for generating a plasma for sputtering |
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| US6345588B1 (en) | 1997-08-07 | 2002-02-12 | Applied Materials, Inc. | Use of variable RF generator to control coil voltage distribution |
| US6359250B1 (en) | 1998-07-13 | 2002-03-19 | Applied Komatsu Technology, Inc. | RF matching network with distributed outputs |
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| US6368469B1 (en) | 1996-05-09 | 2002-04-09 | Applied Materials, Inc. | Coils for generating a plasma and for sputtering |
| US6375810B2 (en) | 1997-08-07 | 2002-04-23 | Applied Materials, Inc. | Plasma vapor deposition with coil sputtering |
| US6514390B1 (en) | 1996-10-17 | 2003-02-04 | Applied Materials, Inc. | Method to eliminate coil sputtering in an ICP source |
| US6565717B1 (en) | 1997-09-15 | 2003-05-20 | Applied Materials, Inc. | Apparatus for sputtering ionized material in a medium to high density plasma |
| US6579426B1 (en) | 1997-05-16 | 2003-06-17 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
| US6599399B2 (en) | 1997-03-07 | 2003-07-29 | Applied Materials, Inc. | Sputtering method to generate ionized metal plasma using electron beams and magnetic field |
| US6652717B1 (en) | 1997-05-16 | 2003-11-25 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
| US6660134B1 (en) | 1998-07-10 | 2003-12-09 | Applied Materials, Inc. | Feedthrough overlap coil |
| US7001831B2 (en) | 2002-03-12 | 2006-02-21 | Kyocera Corporation | Method for depositing a film on a substrate using Cat-PACVD |
| JP2007019284A (en) * | 2005-07-08 | 2007-01-25 | Sony Corp | Plasma CVD apparatus and thin film forming method |
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| JPS62273731A (en) * | 1986-05-21 | 1987-11-27 | Tokyo Electron Ltd | Plasma processor |
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|---|---|---|---|---|
| US6228229B1 (en) * | 1995-11-15 | 2001-05-08 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
| US6297595B1 (en) | 1995-11-15 | 2001-10-02 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
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| US6361661B2 (en) | 1997-05-16 | 2002-03-26 | Applies Materials, Inc. | Hybrid coil design for ionized deposition |
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