JPH0719071B2 - Light receiving member - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to light (here, light in a broad sense, ultraviolet light, visible light,
The present invention relates to a light receiving member sensitive to electromagnetic waves such as infrared rays, X rays, and γ rays). More specifically, it relates to a light receiving member suitable for using coherent light such as laser light.

[Description of Prior Art]

As a method of recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light receiving member with laser light modulated according to the digital image information, and then the latent image is developed, Further, a method of recording an image is known, in which transfer, fixing and the like are performed as necessary. In particular, in the image forming method by electrophotography, a small and inexpensive He-Ne laser or semiconductor laser ( It is common to carry out image recording using a light emission wavelength of 650 to 820 nm).

By the way, as a light receiving member for electrophotography suitable when using a semiconductor laser, in addition to the fact that the matching of the light sensitive region is superior to other types of light receiving members,
The Vickers hardness is high, and the problem of pollution is small. It is evaluated, for example, in JP-A-54-86341 and JP-A-56-837.
Attention has been paid to a light receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as "a-Si") as disclosed in Japanese Patent Laid-Open No. 46-46.

However, regarding the light-receiving member, when the light-receiving layer is a single-layer a-Si layer, while maintaining its high photosensitivity, it is possible to secure a dark resistance of 10 ¹² Ωcm or more required for electrophotography. Is required to structurally contain a hydrogen atom, a halogen atom, or a boron atom in addition to them in a controlled amount in a specific amount range. Therefore, various conditions for forming a layer are required. There is a considerable limit to the tolerance of the design of the light receiving member, such as the need to strictly control the It has been proposed to improve the design tolerance by making the high photosensitivity effective even if the dark resistance is low to some extent. That is, for example, JP 54-121743 A, JP 57-
No. 4053, JP-A-57-4172, the light-receiving layer has a layered structure of two or more layers in which layers having different conductivity characteristics are laminated, and a depletion layer is formed inside the light-receiving layer, or JP-A-57-52178, 52179, 52180, 58159
No. 58160, No. 58161, each of which has a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or / and on the upper surface of the photoreceptive layer. A light receiving member having improved dark resistance has been proposed.

However, such a light-receiving layer having a multi-layered light-receiving layer has a variation in the layer thickness of each layer, and when laser recording is performed using this, the laser beam is a coherent monochromatic light. From the laser light irradiation side free surface, each layer constituting the light receiving layer and the layer interface between the support and the light receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as “interface”). Often, each of the reflected light that is reflected causes interference.

This interference phenomenon is a so-called
It appears as an interference fringe pattern, which causes a defective image. In particular, when forming a halftone image with high gradation, a blocking image with extremely poor discrimination is provided.

Another important point is that the absorption of the laser light in the light-receiving layer decreases as the wavelength region of the semiconductor laser light used becomes longer, which causes a problem that the interference phenomenon becomes remarkable. .

This point will be described below with reference to the drawings.

FIG. 6 shows light I ₀ incident on a certain layer constituting the light receiving layer of the light receiving member, reflected light R ₁ reflected by the upper interface 602, and reflected light R ₂ reflected by the lower interface 601. .

Then, the average layer thickness of the layer is d, the refractive index is n, the wavelength of light is λ, and the layer thickness of a certain layer is gentle. If the difference in layer thickness is uneven, the reflected light R ₁ , R ₂ will be 2nd = mλ
(M is an integer, reflected light strengthens each other) The amount of absorbed light and the amount of transmitted light of a certain layer change depending on which of the conditions (m is an integer and reflected lights weaken each other) is satisfied. That is, in the case where the light receiving member has a structure of two or more layers (multilayer) as shown in FIG. 7, an interference effect as shown in FIG. As shown in FIG. 7, as a result, the respective interferences act synergistically to form an interference fringe pattern, which directly affects the transfer member and corresponds to the interference fringe pattern on the member. If the interference fringes appear on the visible image that is transferred and fixed and cause a defective image, there is a problem.

As a measure to solve this problem, (a) a method of forming a light scattering surface by diamond cutting the surface of the support and providing irregularities of ± 500Å to ± 10000Å (for example, see JP-A-58-162975). (B) A method of providing a light absorbing layer by black-anodizing the surface of an aluminum support or dispersing carbon, a coloring pigment or a dye in a resin (for example, see JP-A-57-165845). (C) A method of providing a light scattering and antireflection layer on the surface of the support by subjecting the surface of the aluminum support to a matte finish alumite treatment or providing fine irregularities in the form of grain with sandplast (for example, JP-A-57).
-16554 gazette) is proposed.

Although these proposed methods bring some results, they are not sufficient to completely eliminate the interference fringe pattern appearing on the image.

That is, regarding the method (a), although a large number of irregularities of a specific size are provided on the surface of the support, the appearance of an interference fringe pattern due to the light scattering effect is prevented for a while, but
Since the specular reflection light component still remains as the light scattering, the interference fringe pattern due to the specular reflection light remains, and the irradiation spot spreads due to the light scattering effect on the surface of the support, and The resolution will be reduced.

With regard to the method (b), the black alumite treatment cannot completely absorb the light, and the reflected light on the surface of the support remains. Further, when providing the color pigment dispersed resin layer,
When the a-Si layer is formed, the degassing phenomenon from the resin layer occurs, and the quality of the formed light-receiving layer is significantly deteriorated. The resin layer is damaged by the plasma when the a-Si layer is formed. As a result, there is a problem that the original absorption function is reduced and the subsequent formation of the a-Si layer is adversely affected by the deterioration of the surface state.

Regarding the method (c), as shown in FIG. 8, for example, incident light I ₀ is partially reflected by the surface of the light receiving layer 802 to become reflected light R ₁ , and the rest is the light receiving layer 802. Enters into the inside of and becomes transmitted light I ₁ . A part of the transmitted light I ₁ is scattered on the surface of the support 801 to become diffused light K ₁ , K ₂ , K ₃ ... And the rest is specularly reflected to become reflected light R ₂ . A part of the emitted light R ₃ goes out to the outside, but the emitted light R ₃ is a component that interferes with the reflected light R ₁ and remains in any case, so the interference fringe pattern still disappears. do not do.

By the way, in order to prevent interference in this case, there is an attempt to increase the diffusivity of the surface of the support 801 so that multiple reflection inside the light-receiving layer does not occur. Then, the light diffuses to cause halation and eventually the resolution is lowered.

In particular, in the multi-layered light receiving member, even if the surface of the support 901 is irregularly roughened as shown in FIG.
Reflected light R ₂ on the surface at 02, reflected light R _{1 on} the second layer, support
The specularly reflected lights R _{3 on} the 901 surface interfere with each other to form an interference fringe pattern according to the thickness of each layer of the light receiving member. Therefore, in the light receiving member having a multilayer structure, it is impossible to completely prevent the interference fringes by irregularly roughening the surface of the support 901.

Also, when the surface of the support is irregularly roughened by a method such as sandblasting, the surface roughness varies widely among the lots, and even within the same lot, the surface roughness is uneven. , There is a problem in manufacturing control. In addition, relatively large projections are often formed randomly, and such large projections cause local breakdown of the photoreceptor layer.

Further, when the surface of the support is simply roughened, as shown in FIG. 10, usually, along the uneven shape 1003 of the surface of the support 1001, the light receiving layer 1002 is deposited, so that the support 1001 The uneven inclined surface and the uneven inclined surface of the light receiving layer 1002 are 1003 ′, 10
It becomes parallel as indicated by 04 '.

Therefore, in that part, the incident light is 2nd ₁ = mλ or The relationship is established, and becomes a bright part or a dark part, respectively. In the entire light-receiving layer, the maximum difference among the respective thicknesses d ₁ , d ₂ , d ₃ , and d ₄ of the light-receiving layer is As a result, there is a non-uniformity of the layer thickness such that a bright and dark striped pattern appears.

Therefore, the occurrence of the interference fringe pattern cannot be completely prevented only by regularly roughening the surface of the support 1001.

Also, when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, regular reflection on the surface of the support described in the single-layered light-receiving member shown in FIG. In addition to the interference between the light and the reflected light on the surface of the light-receiving layer, the interference due to the reflected light at the interface between the layers is added, so that the degree of appearance of the interference fringe pattern of the light-receiving member having a further structure becomes more complicated.

[Object of the Invention]

An object of the present invention is to eliminate the above-mentioned problems and satisfy various requirements for a light-receiving member having a light-receiving layer mainly composed of a-Si.

That is, the main object of the present invention is that electrical, optical, and photoconductive properties are substantially stable regardless of the use environment, are substantially stable to light, and have excellent light fatigue resistance, and even when repeatedly used, a deterioration phenomenon. To provide a light-receiving member having a light-receiving layer composed of a-Si, which has excellent durability and moisture resistance, does not cause residual potential at all or is hardly observed, and is easy to manage in production. is there.

Another object of the present invention is to provide a photoreceptive member having a photoreceptive layer composed of a-Si, which has high photosensitivity in the entire visible light region, is particularly excellent in mating property with a semiconductor laser, and has a fast photoresponse. To provide.

Still another object of the present invention is to provide a light receiving member having a light receiving layer composed of a-Si, which has high photosensitivity, high SN ratio characteristics and high electrical withstand voltage.

Another object of the present invention is to provide excellent adhesion between the layer provided on the support and the support or between the layers of the laminated layers,
The structure is dense and stable, and the layer quality is high. a-Si
Another object of the present invention is to provide a light receiving member having a light receiving layer composed of.

Still another object of the present invention is suitable for image formation using coherent monochromatic light, and even during long-term repeated use, there is no appearance of interference fringe patterns and spots during reversal development, and there are no image defects or images. To provide a photoreceptive member having a photoreceptive layer composed of a-Si capable of obtaining a high-quality image with high density, high density, clear halftone, and no blurring. It is in.

[Structure of Invention]

The present inventors have earnestly conducted research to overcome the above-mentioned problems of the conventional light-receiving member and achieve the above-mentioned object, and as a result, have obtained the findings described below, and based on the findings, the present invention Was completed.

The present invention is directed to a surface of a cylindrical support having protrusions forming a periodic spiral structure, a first layer made of an amorphous material containing silicon atoms, silicon atoms, and oxygen. An atom selected from an atom, a carbon atom and a nitrogen atom,
A light receiving member having a light receiving layer having a second layer composed of an amorphous material containing an atom selected from a hydrogen atom and a halogen atom, wherein the surface of the cylindrical support is A cross-sectional shape of the convex portion on a plane including the central axis of the cylindrical support is a convex shape in which a subpeak overlaps a main peak, and the size of one cycle of the main peak is the cylindrical shape. It is smaller than the diameter of the coherent irradiation light that irradiates the support,
Further, the light-receiving layer on the surface of the cylindrical support has at least a pair of non-parallel interfaces in the short range, and the non-parallel interfaces are numerous in at least one direction in a plane perpendicular to the layer thickness direction. The present invention relates to a light receiving member which is arranged.

By the way, the findings obtained by the present inventors as a result of earnest studies have been summarized, in a light receiving member having a plurality of layers on a support, a fine uneven shape smaller than the resolution required for the light receiving member is formed. It is formed on the surface of the support, and at least a pair of non-parallel interfaces is formed in a minute portion (hereinafter, referred to as "short range") within one cycle of the uneven shape, and the non-parallel interface is a layer. The problem of interference fringe patterns appearing during image formation is solved when a large number of them are arranged in at least one direction in a plane perpendicular to the thickness direction, and in that case, the vertical cross section of the convex and concave portions provided on the support surface. The shape is
Controlled non-uniformity of the layer thickness of each layer formed in the short range, good adhesion between the support and the layer directly provided on the support, or further secure desired electrical contact Therefore, it is desirable that the main peak has a shape in which the sub-peak is superposed.

This finding is based on the factual relations obtained by various experiments that the present inventors have tried.

This will be described below with reference to the drawings in order to facilitate understanding.

FIG. 1 is a schematic view showing an example of a light-receiving member having a multi-layered light-receiving layer according to the present invention. In this example, the surface of the support 101 has a cross-sectional shape in which a sub-peak is superimposed on the main peak to form a plurality of minute uneven shapes, and on the support 101, along the uneven shape. , A light receiving layer including a first layer 102 and a second layer 103.

2 to 4 are views for explaining the problem of the interference fringe pattern in the light receiving member of the present invention.

FIG. 2 (A) is an enlarged view of a part of the first layer and the second layer of the light receiving member shown in FIG. 1, and FIG.
The figure is a diagram showing the brightness in the same part.
Indicates a first layer, 203 indicates a second layer, 204 indicates a free surface, and 205 indicates an interface between the first layer and the second layer. As shown in FIG. 2 (A), since the layer thickness of the second layer 203 continuously changes from d ₂₁ to d ₂₂ in the short range l,
The free surface 204 and the interface 205 have different inclinations. Therefore, the coherent light such as laser light that has entered the short range l causes interference in the short range l, and a minute interference fringe pattern is generated. However, the interference fringes generated in the short range 1 do not appear in the image because the size of the short range 1 is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. In addition, although it is almost nonexistent, even if a situation appears in the image, the resolution is less than that of the naked eye, so that there is practically no problem.

On the other hand, in FIG. 3 (however, 302 is the first layer, 303 is the second layer, 304 is the free surface, and 305 is the interface between the first layer 302 and the second layer 303). As shown, when the interface 305 between the first layer 302 and the second layer 303 and the free surface 304 are not parallel (see FIG. 3 (A)), the reflected light with respect to the incident light I _{0 is} reflected. Since the traveling directions of R ₁ and emitted light R ₃ are different, the interface 30
The degree of interference is reduced as compared with the case where 5 and the free surface 304 are parallel (see FIG. 3 (B)). That is, even if interference occurs, the degree of interference is smaller when the pair of interfaces are in a non-parallel relationship than when the pair of interfaces are in a parallel relationship, as shown in FIG. 3 (C). Therefore, the difference in light and shade of the interference fringe pattern becomes negligibly small, and as a result,
The amount of incident light is averaged.

This means that, as shown in FIG. 2 (C), the second layer 203
Is non-uniform macroscopically, that is, the layer thicknesses d ₂₃ and d ₂₄ of the second layer at any two different positions are d ₂₃
Even when ≠ d ₂₄ , the same is true, and the amount of light incident on all areas is uniform as shown in FIG. 2 (D).

Although the case where the first layer and the second layer are laminated on the support has been described above, when the first layer of the light receiving member of the present invention has a multilayer structure, for example, As shown in FIG. 4, even when the first layer 402 and the second layer 403 composed of the two component layers 402 ′ and 402 ″ are laminated on the support 401, Reflected light for incident light I ₀
R ₁ , R ₂ , R ₃ , R ₄ and R ₅ exist, but in each of the layers 402 ′, 402 ″ and 403, the phenomenon that the incident light amount is averaged as described with reference to FIG. 3 occurs. .

Moreover, the interface of each layer in the short range 1 acts as a kind of slit, where a diffraction phenomenon occurs.

Therefore, the interference in each layer appears as the product of the interference due to the difference in the layer thickness and the interference due to the diffraction at the layer interface.

Therefore, when considering the entire light-receiving layer, interference has a synergistic effect in each layer, so that in the light-receiving member of the present invention, as the number of layers constituting the light-receiving layer increases, the interference further increases. It is possible to prevent the influence of.

The support of the light-receiving member of the present invention having the above-described experimentally confirmed factual relationship has a surface having fine irregularities smaller than the resolution required for the light-receiving member, and The cross-sectional shape of the unevenness has a shape in which a sub-peak is superimposed on a main peak.

The use of a support having a hard surface shape causes an image formed by interfering with a light-receiving member having a light-receiving layer formed thereon, by reflecting light passing through the light-receiving layer on the surface of the support. Is efficiently prevented from forming a striped pattern, which leads to formation of an excellent image.

With respect to the surface of the support of the light receiving member of the present invention, the size 1 of one period of a suitable uneven shape is the spot diameter L of the irradiation light.
If so, it is necessary that l ≦ L.

The light-receiving layer of the light-receiving member of the present invention is composed of a first layer and a second layer, and the first layer is a silicon atom (S
i), preferably an amorphous material containing at least one of a hydrogen atom (H) and a halogen atom (X) [hereinafter referred to as “a-Si (H, X)”. ] Or at least one selected from oxygen atom (O), carbon atom (C) and nitrogen atom,
And a-Si (H, containing atoms not contained in the second layer
X), and the first layer may further contain an atom belonging to Group III or Group V of the periodic table (a substance that controls conductivity), if necessary. The first layer may have a multilayer structure, and particularly preferably has a charge injection blocking layer containing a substance that controls conductivity as one of the constituent layers, and / or
It has a barrier layer as one of the constituent layers.

The second layer contains silicon atoms, atoms selected from oxygen atoms and nitrogen atoms, and not contained in the first layer, and at least one of hydrogen atoms and halogen atoms. Amorphous material
Notated as "a-Si (O, N) (H, X)". ] Is composed.

In the light receiving member of the present invention, the support having the above surface shape and the light receiving layer formed on the support are closely related. That is, the light-receiving member of the present invention has a first layer and a second layer laminated on a support, and the first layer will be described in detail later. As described above, for the purpose of preventing interference, is it possible to form a localized region (that is, a charge blocking layer) containing a relatively large amount of a substance that controls conductivity in the end portion of the first layer on the support side? Or / and it is desirable to form a barrier layer at the end of the first layer on the side of the support, and in the light receiving member of the present invention having such a structure, a plurality of interfaces of the plurality of layers are formed on the support. However, in the light receiving member of the present invention,
There is at least one pair of non-parallel interfaces within.

In order to achieve the object of the present invention more effectively, the difference in the layer thickness in the short range 1, for example, the difference between d ₂₁ and d ₂₂ in FIG. Let λ be the following formula; It is desirable to satisfy. The upper limit of the difference in layer thickness is preferably 0.1 μm to 2 μm, more preferably 0.1 μm.
m to 1.5 μm, optimally 0.2 μm to 1 μm.

As described above, in the light receiving member of the present invention, the layer thickness of each layer is controlled so that at least any two interfaces are in a non-parallel relationship in the short range 1.
As long as this condition is satisfied, there may be parallel interfaces. However, in that case, when two arbitrary positions are taken with respect to an interface having a parallel relationship, the difference in layer thickness between these positions is Δl, the wavelength of irradiation light is λ, and the refractive index of the layer is n. , The following formula; It is desirable to form the layer or layer region so as to satisfy

Regarding the production of the first layer and the second layer of the present invention, in order to efficiently achieve the aforementioned objects of the present invention, it is necessary to precisely control the layer thickness at an optical level, Vacuum deposition methods such as glow discharge method, spattering method and ion plating method are usually used.
A CVD method, a thermal CVD method or the like can also be adopted.

Hereinafter, the specific structure of the light receiving member of the present invention will be described in detail with reference to FIG.

FIG. 1 is a diagram schematically showing the layer structure of the light receiving member of the present invention, in which 100 is a light receiving member, 1
01 is a support, 102 is a first layer, 103 is a second layer, and 104 is a free surface.

Support 101 The support 101 in the light receiving member of the present invention has a surface having unevenness smaller than the resolution required for the light receiving member, and the cross-sectional shape of the unevenness has a main peak and a sub-peak superposed thereon. It has a shape.

The concavo-convex shape provided on the surface of the support is formed by a chemical method such as chemical etching, electric plating, a physical method such as vapor deposition and sputtering, and a mechanical method such as lathe processing. To make it easier,
A mechanical working method such as a lathe is preferable.

For example, when the surface of a support is machined by a lathe, a cutting tool having a V-shaped cutting edge is fixed at a predetermined position of a cutting machine such as a milling machine or a lathe, and a cylindrical support is designed in advance as desired. The surface of the support is accurately cut by rotating the support in a predetermined direction while rotating it in accordance with the program thus formed, so that a desired uneven shape, pitch, and depth are formed. The linear protrusion formed by the unevenness formed by such a cutting method has a spiral structure centered on the central axis of the cylindrical support. The spiral structure of the protrusions may be a double, triple multiple spiral structure, or a cross spiral structure. Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure.

Further, it is preferable that the uneven shapes are regularly or periodically arranged in order to efficiently achieve the object of the present invention. Furthermore, in addition to this, in order to efficiently scatter the incident light in one direction, the uneven shape is symmetrical (FIG. 5 (A)) or asymmetrical (fifth) with respect to the main peak thereof.
It is preferable that they are unified as shown in FIG. But,
In order to increase the degree of freedom in processing control of the support, it is preferable that both are mixed.

In the present invention, each dimension of minute irregularities provided on the surface of the support in a controlled state is set so as to effectively achieve the object of the present invention in consideration of the following points. .

That is, first, the a-Si layer constituting the light receiving layer is structurally sensitive to the state of the surface on which the layer is formed, and the layer quality greatly changes depending on the surface state.

Therefore, it is necessary to set the dimension of minute irregularities provided on the surface of the support so as not to deteriorate the quality of the a-Si layer.

Second, if the free surface of the light-receiving layer has extreme irregularities, the cleaning cannot be completely performed after the image formation.

Further, when performing blade cleaning, there is a problem that damage to the blade becomes faster.

As a result of examining the above-mentioned problems in layer deposition, problems in the process of electrophotography, and conditions for preventing interference fringe patterns,
The pitch of the recess on the surface of the support is usually 0.3 μm to 500 μm.
m, preferably 1 μm to 200 μm, more preferably 5 μm
It is desirable that it is m to 50 μm.

The maximum depth of the recess is preferably 0.1 μm to 5 μm.
m, more preferably 0.3 μm to 3 μm, optimally 0.6 μm
It is desirable to be set to ˜2 μm. When the pitch and maximum depth of the concave portion on the surface of the support are within the above range, the inclination of the inclined surface of the concave portion (or the linear protrusion) is preferably 1 to 20 degrees,
It is more preferably 3 to 15 degrees, and most preferably 4 to 10 degrees.

The support 101 used in the present invention may be either conductive or electrically insulating. As the conductive support, for example, NiCr, stainless steel, Al, Cr, Mo,
Examples include metals such as Au, Nb, Ta, V, Ti, Pt, and Pb, or alloys thereof.

Examples of the electrically insulating support include films or sheets of synthetic resin such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene and polyamide, glass, ceramics, paper and the like. It is preferable that at least one surface of these electrically insulating supports is subjected to a conductive treatment, and a light receiving layer is provided on the surface side subjected to the conductive treatment.

For example, if it is glass, NiCr, Al, Cr,
Mo, Au, Ir, Nb, Ta, V, Ti, Pt, Pd, In ₂ O ₃ , Sno ₂ , IT
O (In ₂ O ₃ + SnO ₂ ) to provide conductivity by providing a thin film or the like, or synthetic resin film such as polyester film, NiCr, Al, Ag, Pb, Zn, Ni, A
A thin film of a metal such as u, Cr, Mo, Ir, Nb, Ta, V, Tl or Pt is provided on the surface by vacuum vapor deposition, electron beam vapor deposition, sputtering or the like, or the surface is laminated with the metal, Conductivity is given to the surface. The shape of the support can be any shape such as a cylindrical shape, a belt shape, a plate shape, etc., but the shape can be appropriately determined depending on the application and desire. For example, the light receiving member 100 of FIG.
When used as an electrophotographic image forming member, in the case of continuous high speed copying, an endless belt shape or a cylindrical shape is desirable. The thickness of the support is appropriately determined so that a desired light-receiving member can be formed, but when flexibility is required as the light-receiving member, a range in which the function as the support is sufficiently exhibited It can be made as thin as possible.
However, in terms of mechanical strength and the like in terms of manufacturing and handling of the support, it is usually 10 μm or more.

First Layer In the light receiving member of the present invention, the first layer 102 is provided on the support 101, and the first layer is a-Si.
(H, X) or oxygen atom, a-Si (H, X) containing at least one selected from carbon atom and nitrogen atom, further, the first 102, if necessary. It is possible to include substances that control conductivity.

Specific examples of the halogen atom (X) to be contained in the first layer include fluorine, chlorine, bromine and iodine, with fluorine and chlorine being particularly preferable. The amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first layer 102, or the sum of the amounts of hydrogen atoms and halogen atoms (H + X) is usually 1 to 40.
It is desirable that the content is atomic%, preferably 5 to 30 atomic%.

Further, in the light receiving member of the present invention, the layer thickness of the first layer is one of important factors for efficiently achieving the object of the present invention, and the light receiving member is provided with desired characteristics. As described above, it is necessary to pay sufficient attention when designing the light receiving member, and usually 1 to 100 μm, but preferably 1 to 80 μm.
μ, and more preferably 2 to 50 μ.

In the first layer of the light receiving member of the present invention, the purpose of incorporating at least one selected from oxygen atom, carbon atom and nitrogen atom is mainly to increase the photosensitivity and dark resistance of the light receiving member, And it is to improve the adhesion between the support and the first layer.

In the first layer of the present invention, when at least one selected from oxygen atom, carbon atom and nitrogen atom is contained, it is contained in a uniform distribution state in the layer thickness direction or is not contained in the layer thickness direction. Whether it is contained in a uniform distribution state depends on the above-mentioned purpose or expected effect, and accordingly, the amount to be contained also differs.

That is, when the purpose is to increase the photosensitivity and dark resistance of the light-receiving member, it is contained in a uniform distribution state in the entire layer region of the first layer, and in this case, carbon to be contained in the first layer. The amount of at least one selected from atoms, oxygen atoms and nitrogen atoms may be relatively small.

Further, when the purpose is to improve the adhesion between the support and the first layer, it is uniformly contained in a part of the layer region of the support-side end of the first layer, or At the end of the layer on the support side, at least one kind selected from carbon atom, oxygen atom, and nitrogen atom is contained in a distributed state such that the distribution concentration is high, and in this case, oxygen contained in the first layer is contained. The amount of at least one selected from the group consisting of atoms, carbon atoms, and nitrogen atoms is made relatively large so as to ensure the improvement of adhesion with the support.

In the light receiving member of the present invention, the amount of at least one selected from oxygen atom, carbon atom, and nitrogen atom contained in the first layer is, however, the characteristics required for the first layer as described above. In addition to the above, it is determined by taking into consideration the organic relevance such as the characteristics at the contact interface with the support, etc., usually 0.001 to 50 atomic%, preferably 0.002 to 40 atomic%, most preferably 0.003. ~ 30 atomic%

By the way, when it is contained in the whole layer region of the first layer, or when the ratio of the layer thickness of a part of the layer region to be contained in the layer thickness of the first layer is large, the above-mentioned contained amount The upper limit of is reduced. That is, in that case, for example, the layer thickness of the layer region to be contained is equal to the layer thickness of the first layer.
When it becomes 2/5, the amount to be contained is usually 30ato.
mic% or less, preferably 20atomic% or less, optimally 10ato
mic% or less.

Next, the amount of at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms contained in the first layer of the present invention is relatively large on the support side, and from the end on the support side. Decrease toward the end on the second layer side, and in the vicinity of the end on the second layer side of the first layer, it is distributed in a relatively small amount or substantially zero. Some typical examples of the case will be described with reference to FIGS. 11 to 19. However, the invention is not limited by these examples. Hereinafter, at least one selected from carbon atom and oxygen atom is referred to as “atom (O, C, N)”.

11 to 19, the horizontal axis represents the distribution concentration C of atoms (O, C, N), the vertical axis represents the layer thickness of the first layer, and t _B represents the thickness of the support and the first layer. The interface position, t _T, represents the position of the interface between the first layer and the second layer.

FIG. 11 shows a first typical example of the distribution state of atoms (O, C, N) contained in the first layer in the layer thickness direction. In such an example, atoms (O, C, N) to the position t ₁ from the interface position t _B between the first layer and the support containing the atom (O, C, N) distribution concentration C C ₁ The distribution concentration C of atoms (O, C, N) continuously decreases from the concentration C ₂ from the position t ₁ to the interface position t _T with the second layer, and at the position t _T The distribution concentration of atoms (O, C, N) becomes C ₃ .

In another typical example shown in FIG. 12, the distribution concentration C of atoms (O, C, N) contained in the first layer is from the position t _B to the position t.
_It continuously decreases from the concentration C ₄ until reaching _T, and reaches the concentration C ₅ at the position t _T.

In the example shown in FIG. 13, from the position t _B to the position t ₂ , atoms (O,
C, N) distribution density C keeps a constant value of density C ₆ , and at position t ₂
From the position C to the position t _T , the distribution concentration C of the atom (O, C, N) gradually and continuously decreases from the concentration C _7, and the distribution concentration of the atom (O, C, N) at the position t _T. C is substantially zero.

In the example shown in FIG. 14, atoms (O, C, N) until the distribution concentration C of the lead to the position t _T to the position t _B, gradually decreases from the concentration C ₈ continuously atom in position t _T The distribution concentration C of (O, C, N) becomes substantially zero.

In the example shown in FIG. 15, the distribution concentration C of atoms (O, C, N) is
From the position t _B to the position t ₃ , the concentration C _{9 is} a constant value, and between the position t ₃ and the position t _T , the concentration C ₉ to the concentration C _9.
It decreases linearly until it reaches C ₁₀ .

In the example shown in FIG. 16, the distribution concentration C of atoms (O, C, N) is
The concentration C ₁₁ is constant from the position t _B to the position t ₄ , and the concentration C ₁₂ to the concentration C is from the position t ₄ to the position t _T.
It decreases linearly until it reaches ₁₃ .

In the example shown in FIG. 17, the distribution concentration C of atoms (O, C, N) decreases linearly from the position t _B to the position t _T, and from the concentration C ₁₄ to substantially zero. To do.

In the example shown in FIG. 18, the distribution concentration C of atoms (O, C, N) is
It decreases linearly from the position t _B to the position t ₅ until it reaches the concentration C ₁₅ to the concentration C _16, and maintains a constant value of the concentration C ₁₆ from the position t ₅ to the position t _T.

Finally, in the example shown in FIG. 19, the distribution concentration C of atoms (O, C, N) is the concentration C ₁₇ at the position t _B , and from the position t ₅ to the position t ₆ , the concentration C ₁₇ starts from the concentration C _17. Is less and less
The concentration decreases sharply near the position t ₆ and reaches the concentration C ₁₈ at the position t _T. Then decreases from position t ₆ position to t ₇ is sharply at first, then decreases gradually or gently, the concentration C ₁₉ in the position t _7. Furthermore gradually decreases extremely boiled made in between positions t ₇ and position t _8, the concentration C ₂₀ at position t _8. Furthermore, from the position t ₈ to the position t _T
It gradually decreases from C ₂₀ until it becomes substantially zero.

As in the example shown in FIGS. 11 to 19, at the end portion of the first layer on the side of the support, there is a portion having a high distribution concentration C of atoms (O, C, N), and At the end on the side of the second layer, in the case where the distribution concentration C has a portion where the distribution concentration C is considerably low, or when there is a concentration portion which is substantially close to zero, the end portion on the support side of the first layer A localized region in which the distribution concentration of atoms (O, C, N) is relatively high, and preferably the localized region is within 5 μm from the interface position t _B between the support surface and the first layer. By providing the above, it is possible to more efficiently improve the adhesion between the support and the first layer.

The localized region may be a part of the layer region at the end of the first layer containing the atom (O, C, N) on the support side, or may be a part thereof. Whether to do so is appropriately determined according to the characteristics required for the first layer to be formed.

The amount of atoms (O, C, N) contained in the localized region is such that the maximum value of the molecular concentration C of atoms (O, C, N) is 500 atomic ppm or more,
Preferably 800 atomic ppm or higher, optimally 1000 atomic pp
It is preferable that the distribution state is m or more.

Further, in the light receiving member of the present invention, the substance for controlling the conductivity may be contained in the first layer in the entire layer region or a part of the layer region in a uniform or non-uniform distribution state, if necessary. .

Examples of the substance that controls the conductivity include so-called impurities in the field of semiconductors, and an atom belonging to Group III of the periodic table that gives P-type conductivity (hereinafter simply referred to as “I
Group II atom ”. ), Or an atom belonging to Group V of the periodic table that gives n-type conductivity (hereinafter simply referred to as “Group V atom”). Specific examples of the group III atom include B (boron), Al (aluminum), Ga (gallium), In (indium), and Tl (thallium), but the particularly preferable one is B. , Ga. Examples of the Group V atom include P (phosphorus), As (arsenic), Sb (antimony), Bi (bisman), and the like, with P and Sb being particularly preferable.

The first layer of the present invention is a conductivity controlling substance III
When a group atom or a group V atom is contained, whether it is contained in the whole layer region or a part of the layer region is different depending on the intended place or expected action and effect as described later, The amount to be contained also differs.

That is, when the main purpose is to control the conductivity type and / or the conductivity of the first layer, it should be contained in the entire layer region of the light-receiving layer. In this case, a group III atom or a group V atom should be contained. The content of atoms may be relatively small, usually 1 × 10 ^-3 ~
1 × 10 ³ atomic ppm, preferably 5 × 10 ^{−2 to} 5 × 1
0 ² atomic ppm, optimally 1 × 10 ^-1 to 2 × 10 ² atomic ppm
Is.

Further, a group III atom or a group V atom is contained in a uniform distribution state in a part of the layer region in contact with the support, or the distribution concentration of the group III atom or the group V atom in the layer thickness direction is In the case where it is contained so that the concentration is high on the side in contact with the support, such Group III atoms or V
The constituent layer containing a group atom or the layer region containing a high concentration of group III atom functions as a charge injection blocking layer.

That is, when the group III atom is contained, the movement of electrons injected from the support side into the photoreceptive layer is more efficiently performed when the free surface of the photoreceptive layer is subjected to a polar charging treatment. When the free surface of the photoreceptive layer is subjected to a polar electrification treatment, holes injected from the support side into the photoreceptive layer can be blocked. Can be prevented more efficiently. And, in such a case, the content is relatively large, and specifically,
30-5 × 10 ⁴ atomic ppm, preferably 50-1 × 10 ⁴ atomic ppm
ppm, optimally 1 × 10 ^{2 to} 5 × 10 ³ atomic ppm. Further, in order to effectively exhibit the effect as the charge injection blocking layer, the layer thickness of the layer or the layer region provided at the end portion on the support side containing the group III atom is set to t, and the layer of the light receiving layer is set. When the thickness is T, it is desirable that the relationship of t / T ≦ 0.4 is satisfied, and more preferably the value of the relational expression is 0.35 or less, and optimally 0.3 or less. The layer thickness t of the layer or layer region is generally 3 × 10 ^{−3 to} 10 μ, preferably 4 × 10 ^{−3 to} 8 μ, and most preferably 5 × 10 ⁻³ .
It is desirable to set it to 5μ.

The amount of the group III atom or the group V atom contained in the first layer is relatively large on the support side and decreases from the support side to the second layer side. A typical example of the case where the group III atom or the group V atom is distributed in a relatively small amount or substantially close to zero near the end face of the is, This can be explained by the same examples as shown in FIGS. 11 to 19 in the case of containing at least one of atom, carbon atom or nitrogen atom, but the present invention is based on these examples. It is not limited to this.

Then, as in the example shown in FIGS. 11 to 19, a portion having a high concentration concentration C of group III atoms or group V atoms is provided on the side of the first layer close to the support, On the side of the layer closer to the second layer, in the case where the distributed concentration C has a considerably low concentration portion or a concentration portion substantially close to zero, the group III atom is present in the portion closer to the support side. Or the V
By providing a localized region in which the distribution concentration of the group atom is relatively high, preferably by providing the localized region within 5 μm from the interface position in contact with the surface of the support, the group III atom or the group V atom can be obtained. The above-described effect that the layer region having a high concentration concentration of atoms forms the charge injection blocking layer is more effectively exhibited.

As described above, the action and effect of each of the distribution states of the group III atoms or the group V atoms have been described individually. For obtaining the light receiving member having the characteristics capable of achieving the desired purpose
It is said that the distribution state of these Group III atoms or Group V atoms and the amount of Group III atoms or Group V atoms contained in the first layer are used in an appropriate combination as necessary. There is no end. For example, in the case where a charge injection blocking layer is provided at the end of the first layer on the side of the loser, a substance for controlling conductivity contained in the charge injection blocking layer in the first layer other than the charge injection blocking layer. A substance that controls the conductivity of a polarity different from that of the above may be contained, or the amount of the substance that controls the conductivity of the same polarity may be made much smaller than the amount contained in the charge injection blocking layer. You may make it contain.

Furthermore, in the light receiving member of the present invention, as the constituent layer provided at the end portion on the support side, instead of the charge injection blocking layer,
A so-called barrier layer made of an electrically insulating material may be provided, or both the barrier layer and the charge injection blocking layer may be constituent layers. Examples of the material forming the barrier layer include inorganic electrically insulating materials such as Al ₂ O ₃ , SiO ₂ , and Si ₃ N _4, and organic electrically insulating materials such as polycarbonate.

Second Layer The second layer 103 of the light receiving member of the present invention is the above-mentioned first layer 1
A layer provided on 02 and having a free surface 104, that is, a surface layer, silicon atoms, atoms selected from oxygen atoms and nitrogen atoms, and atoms not contained in the first layer, hydrogen atoms and Amorphous material containing at least one of halogen atoms, that is, a-Si (O, N)
It is composed of (H, X). Specifically, when the first layer contains oxygen atoms, the second layer is composed of a-SiN (H, X), when the first layer contains nitrogen atoms, The second layer is composed of a-SiO (H, X), and if the first layer contains neither oxygen nor nitrogen atoms, the second layer is a-SiNH ( H, X), a-SiO (H, X), or a-SiON
It may be composed of (H, X).

The purpose of providing the second layer 103 in the light receiving member of the present invention is to improve moisture resistance, continuous repeated use characteristics, electrical pressure resistance, use environment characteristics, durability, etc. This is achieved by containing the amorphous material forming the second layer with at least one of oxygen atom and nitrogen atom.

Further, in the light receiving member of the present invention, since each of the amorphous materials forming the first layer 102 and the second layer 103 has a common constituent atom of silicon atom, the first layer Chemical stability can be secured at the interface between 102 and the second layer 103.

In the second layer 103, oxygen atoms and / or nitrogen atoms are contained in a uniform distribution state, and the above-mentioned various characteristics are improved as the amount of these atoms contained is increased. However, too much leads to poor layer quality and poor electrical and mechanical properties. Therefore, the content of these atoms is usually 0.001 to 90 atomic%, preferably 1 to 90 atomic%, and most preferably 10 to 80 atomic%.

It is desirable that the second layer also contains at least one of a hydrogen atom and a halogen atom. The amount of hydrogen atom (H) contained in the second layer, the amount of halogen atom (X), or hydrogen. The sum of the amount of atoms and halogen atoms (H + X) is usually 1 to 40 atomic%, preferably 5 to 30.
atomic%, optimally 5 to 25 atomic%.

The second layer 103 needs to be carefully formed to obtain the desired properties. That is, at least one selected from a silicon atom, an oxygen atom and a nitrogen atom, and a substance having a hydrogen atom and / or a halogen atom as constituent atoms may have a morphology depending on the content of each constituent atom and other preparation conditions. Is a crystalline state to an amorphous state, and the electrical properties are conductive, semiconductive, and insulating, and the photoelectric property is photoconductive to non-photoconductive. , A second layer having desired properties according to the purpose
It is important to select the content of each constituent atom, the preparation conditions, etc. so that 103 can be formed.

For example, when the second layer 103 is provided mainly for the purpose of improving electrical withstand voltage, the amorphous material forming the second layer 103 has a remarkable electrical insulating behavior under use conditions. Form. Further, when the second layer 103 is provided mainly for the purpose of improving the rapid repeated use characteristics and the usage environment characteristics, the amorphous material forming the second layer 103 has a degree of electrical insulation described above. Is relaxed to some extent, but is formed to have some sensitivity to the irradiation light.

Further, in the present invention, the layer thickness of the second layer is also one of the important factors for efficiently achieving the object of the present invention, and is appropriately determined according to the intended purpose. , The amount of oxygen atoms, carbon atoms, nitrogen atoms, halogen atoms, hydrogen atoms to be contained in the layer, or the characteristics required for the second layer, it is necessary to determine the mutual and organic relationships. is there. In addition, it is necessary to consider the economical aspect in consideration of productivity and mass productivity. For this reason, the thickness of the second layer is usually 3 × 10 ^{−3 to} 30 μ, more preferably 4 × 10 ^{−3 to} 20 μ, and particularly preferably 5 × 10 ⁻³ to 10 μ.
Let μ.

Since the light-receiving member of the present invention has the above-mentioned layer structure, it can solve all of the problems of the light-receiving member having the light-receiving layer composed of amorphous silicon as described above. Even when a monochromatic laser beam is used as a light source, the appearance of an interference fringe pattern in a formed image due to an interference phenomenon can be significantly prevented, and an extremely high-quality visible image can be formed.

Further, the light-receiving member of the present invention has a high photosensitivity in the entire visible light region, and is particularly excellent in the photosensitivity characteristic on the long wavelength side, so that it is particularly excellent in matching with a semiconductor laser, and has an optical response. It exhibits high electrical properties, excellent electrical, optical and photoconductive properties, electrical withstand voltage and use environment characteristics.

In particular, when it is applied as a photoreceptive member for electrophotography, it has no influence of residual potential on image formation, its electrical characteristics are stable, high sensitivity, and high SN ratio. Therefore, it is possible to stably and repeatedly obtain a high-quality image having excellent light fatigue resistance, repeated use characteristics, high density, clear halftone, and high resolution.

Next, a method for forming the light receiving layer of the present invention will be described.

Any of the amorphous materials forming the light receiving layer of the present invention is formed by a vacuum deposition method utilizing a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion plating method. These manufacturing methods are appropriately selected and adopted depending on factors such as the manufacturing conditions, the load level of capital investment, the manufacturing scale, and the desired characteristics of the light receiving member to be manufactured. Since it is relatively easy to control the conditions for producing the light receiving member having, and the carbon atom and the hydrogen atom can be easily introduced together with the silicon atom, the glow discharge method or the sputtering method is used. It is suitable. Then, the glow discharge method and the sputtering method may be used together in the same apparatus system.

For example, in order to form a layer composed of a-Si (H, X) by the glow discharge method, basically, silicon atoms (Si)
Introducing a raw material gas for introducing hydrogen atoms (H) and / or introducing a halogen atom (X) together with a raw material gas for supplying Si, into a deposition chamber capable of reducing the pressure inside,
A glow discharge is generated in the deposition chamber to form a layer made of a-Si (H, X) on the surface of a predetermined support placed in advance at a predetermined position.

The raw material gas for supplying Si includes SiH ₄ , Si ₂ H ₆ , and Si.
Examples thereof include silicon hydrides (silanes) in a gas state such as ₃ H ₈ and Si ₄ H ₁₀ , which can be gasified. In particular, in terms of ease of layer formation work, good Si supply efficiency, etc., SiH ₄ , Si ₂ H ₆ are preferred.

Further, as the source gas for introducing the halogen atom, many halogen compounds can be mentioned, for example, a halogen gas,
Gaseous or gasifiable halogen compounds such as halides, interhalogen compounds and halogen-substituted silane derivatives are preferred. Specifically, fluorine, chlorine, bromine,
Iodine halogen gas, BrF, ClF, ClF ₃ , BrF ₅ , BrF ₃ ,
Interhalogen compounds such as IF ₇ , ICl, IBr, and SiF ₄ , Si ₂
Examples thereof include silicon halides such as F ₆ , SiCl ₄ , and SiBr ₄ .
When a silicon halide in the gas state or gasifiable as described above is used, a layer composed of a-Si containing a halogen atom is formed without separately using a raw material gas for supplying Si. It is particularly effective because it can.

Further, as the raw material gas for supplying the hydrogen atoms, hydrogen gas, halides such as HF, HCl, HBr, HI, SiH ₄ , Si
_{2 H 6, Si 3 H 8} , Si 4 H 10 hydride such as silicon or SiH ₂ F _2,,
A gas-state or gasifiable substance such as halogen-substituted silicon hydride such as SiH ₂ I ₂ , SiH ₂ Cl ₂ , SiHCl ₃ , SiH ₂ Br ₂ , SiHBr ₃ or the like can be used, and these source gases were used. In this case, it is effective because the content of hydrogen atoms (H), which is extremely effective in controlling electrical or photoelectric characteristics, can be easily controlled. When the hydrogen halide or the halogen-substituted silicon hydride is used, a hydrogen atom (H) is introduced at the same time when the halogen atom is introduced.
Is also particularly effective because it is introduced.

The amount of hydrogen atoms (H) and / or halogen atoms (X) contained in the a-Si layer is controlled by introducing, for example, the temperature of the support, hydrogen atoms (H) or / and halogen atoms (X). The amount of the starting material used for introducing into the deposition chamber,
It is performed by controlling discharge power and the like.

To form a layer of a-Si (H, X) by the reaction sputtering method or the ion plating method, for example, in the case of the sputtering method, for introducing a halogen atom, the above halogen compound or the above is used. The silicon compound gas containing the halogen atom may be introduced into the deposition chamber to form a plasma atmosphere of the gas.

When introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, for example, H ₂ or a gas such as the above-mentioned silanes is introduced into the deposition chamber for sputtering to form a plasma atmosphere of the gas. Good.

For example, in the case of the reaction sputtering method, a Si target is used, and a gas for introducing a halogen atom and H ₂ gas are introduced into the deposition chamber together with an inert gas such as He and Ar as necessary, and a plasma atmosphere is introduced. Is formed, and the Si target is sputtered to form a-Si (H,
X) is formed.

Amorphous crystal in which a-Si (H, X) further contains a group III atom or a group V atom, a nitrogen atom, an oxygen atom or a carbon atom by using a glow discharge method, a sputtering method or an ion plating method. In order to form a layer composed of a high-quality material, a starting material for introducing a group III atom or a group V atom and a starting material for introducing a nitrogen atom at the time of forming the a-Si (H, X) layer. Substances, starting materials for introducing oxygen atoms, or starting materials for introducing carbon atoms with the starting materials for forming a-Si (H, X) described above, and their amounts in the layer to be formed. It is carried out by containing it while controlling it.

For example, to form a layer or a layer region composed of a-Si (H, X) containing a Group III atom or a Group V atom by using a glow discharge method, a sputtering method or an ion plating method. , A starting material for introducing a Group III atom or a Group V atom is used as a starting material for forming a-Si (H, X) when forming the layer composed of a-Si (H, X). It is used in conjunction with materials to control their inclusion in the layers formed.

Specifically as a starting material for introducing a group III atom, for introducing a boron atom, B ₂ H ₆ , B ₄ H ₁₀ , B ₅ H ₉ , B ₅ H ₁₁ , B
₆ H ₁₀ , B ₆ H ₁₂ B ₆ H _14, etc., boron hydride, BF ₃ , BCl ₃ , BBr ₃
And the like. In addition to this, AlCl ₃ , G
Other examples include aCl ₃ , Ga (CH ₃ ) ₂ , InCl ₃ and TlCl ₃ .

As a starting material for introducing a Group V atom, specifically, for introducing a phosphorus atom, phosphorus hydride such as PH ₃ , P ₂ H ₆ or the like, PH ₄ I, PF ₃ , PF
₅ , PCl ₃ PCl ₅ , PBr ₃ , PBr ₅ , PI _{3 and} other phosphorus halides. In addition, AsH ₃ , AsF ₃ , AsCl ₃ , AsBr ₃ , AsF ₅ , Sb
H ₃ , SbF ₃ , SbF ₅ , SbCl ₃ , SbCl ₅ , BiH ₃ , BiCl ₃ , BiBr _{5 and the} like can also be mentioned as effective starting materials for introducing a Group V atom.

When the glow discharge method is used to form a layer or layer region containing an oxygen atom, one selected from the above-mentioned starting materials for forming the light-receiving layer as desired for introducing an oxygen atom. Starting material is added. As such a starting material for introducing an oxygen atom, almost any material can be used as long as it is a gaseous substance containing at least an oxygen atom as a constituent atom or a gasifiable substance.

For example, a raw material gas containing silicon atoms (Si) as constituent atoms, a raw material gas containing oxygen atoms (O) as constituent atoms, and, if necessary, hydrogen atoms (H) and / or halogen atoms (X).
Or a raw material gas having a constituent atom is used at a desired mixing ratio, or a raw material gas having a silicon atom (Si) as a constituent atom and an oxygen atom (O) and a hydrogen atom (H) are constituted. A raw material gas containing atoms is also mixed at a desired mixing ratio, or a raw material gas containing silicon atoms (Si) as constituent atoms, and silicon atoms (Si), oxygen atoms (O) and hydrogen atoms. It is possible to mix and use a raw material gas containing three of (H) as constituent atoms.

Alternatively, a raw material gas containing silicon atoms (Si) and hydrogen atoms (H) as constituent atoms may be mixed with a raw material gas containing oxygen atoms (O) as constituent atoms.

Specifically, for example, oxygen (O ₂ ), ozone (O ₃ ), nitric oxide (NO), nitrogen dioxide (NO ₃ ), nitrogen monoxide (N ₃ ).
₂ O), nitrogen trioxide (N ₂ O ₃ ), tetranitrogen dioxide (N ₂ O ₄ ),
Nitrogen pentoxide (N ₂ O ₅ ), nitric oxide (NO ₃ ), silicon atom (Si), oxygen atom (O) and hydrogen atom (H) as constituent atoms, for example, disiloxane (H ₃ SiOSiH) ₃ ) and lower siloxanes such as trisiloxane (H ₃ SiOSiH ₂ OSiH ₃ ) and the like.

In order to form a layer or layer region containing oxygen atoms by the sputtering method, a single crystal or polycrystalline Si wafer or SiO ₂ wafer, or a wafer containing Si and SiO ₂ mixed therein is targeted. As described above, these may be sputtered in various gas atmospheres.

For example, if you use a Si wafer as a target,
A raw material gas for introducing hydrogen atoms and / or halogen atoms, if necessary, is diluted with a diluting gas, if necessary, and then introduced into a deposition chamber for spatters. Plasma may be formed and the Si wafer may be sputtered.

Alternatively, Si and SiO ₂ are used as separate targets, or by using a single target of Si and SiO ₂ mixed, in a diluting gas atmosphere as a gas for a sputter or at least It can be formed by sputtering in a gas atmosphere containing hydrogen atoms (H) and / or halogen atoms (X) as constituent atoms. As the raw material gas for introducing oxygen atoms, the raw material gas for introducing oxygen atoms among the raw material gases shown in the example of glow discharge described above can be used as an effective gas in the case of sputtering.

When the glow discharge method is used to form a layer or layer region containing a nitrogen atom, a starting material for forming the light-receiving layer may be selected as desired from among the above-mentioned starting materials for forming the light-receiving layer. Add starting material. As such a starting material for introducing a nitrogen atom, almost any material can be used as long as it is a gaseous substance containing at least a nitrogen atom as a constituent atom or a substance that can be gasified.

For example, a raw material gas containing silicon atoms (Si) as constituent atoms, a raw material gas containing nitrogen atoms (N) as constituent atoms, and, if necessary, hydrogen atoms (H) and / or halogen atoms (X).
Or a raw material gas containing Si as a constituent atom is mixed at a desired mixing ratio, or a raw material gas containing a silicon atom (Si) as a constituent atom and a nitrogen atom (N) and a hydrogen atom (H) are composed. Atomic source gas may also be mixed or used in a desired mixing ratio.

Alternatively, a raw material gas containing silicon atoms (Si) and hydrogen atoms (H) as constituent atoms may be mixed with a raw material gas containing nitrogen atoms (N) as constituent atoms.

A starting material effectively used as a raw material gas for introducing a nitrogen atom (N) used when forming a layer or a layer region containing a nitrogen atom is N as a constituent atom or N and H.
With and as constituent atoms, such as nitrogen (N ₂ ), ammonia (NH
₃ ), gaseous or gasifiable nitrogen such as hydrazine (H ₂ NNH ₂ ), hydrogen azide (HN ₃ ), ammonium azide (NH ₄ N ₃ ), nitrogen compounds such as nitrides and azides be able to. In addition to this, in addition to introducing a nitrogen atom (N), a halogen atom (X) can be introduced,
Examples thereof include halogenated nitrogen compounds such as nitrogen trifluoride (F ₃ N) and nitrogen tetrafluoride (F ₄ N ₂ ).

According to the sputtering method, in order to form a layer or layer region containing a nitrogen atom, a single crystal or polycrystalline Si wafer or Si ₃ N ₄ wafer, or Si and Si ₃ N ₄ are mixed and contained. This may be performed by using the existing wafer as a target and sputtering these in various gas atmospheres.

For example, if you use a Si wafer as a target,
A raw material gas for introducing a nitrogen atom and, if necessary, a hydrogen atom and / or a halogen atom is diluted with a diluting gas, if necessary, and introduced into a deposition chamber for a sputter, and the gas of these gases is introduced. Plasma may be formed and the Si wafer may be sputtered.

Separately, Si and Si ₃ N ₄ are used as separate targets.
Alternatively, by using a single target in which Si and Si ₃ N ₄ are mixed, at least hydrogen atoms (H) or / and halogen atoms (X) are contained in an atmosphere of a diluting gas as a gas for a sputter. It can be formed by sputtering in a gas atmosphere containing the constituent atoms. As the raw material gas for introducing nitrogen atoms, the raw material gas for introducing nitrogen atoms among the raw material gases shown in the example of glow discharge described above can be used as an effective gas even in the case of sputtering.

Further, for example, in order to form the first layer containing carbon atoms by the glow discharge method, a source gas containing silicon atoms (Si) as constituent atoms, a source gas containing carbon atoms (C) as constituent atoms, If necessary, a raw material gas containing hydrogen atoms (H) and / or halogen atoms (X) as a constituent atom is mixed and used at a desired mixing ratio, or a raw material containing silicon atoms (Si) as a constituent atom. A gas and a source gas containing carbon atoms (C) and hydrogen atoms (H) as constituent atoms are mixed at a desired mixing ratio, or a source gas containing silicon atoms (Si) as constituent atoms. , A raw material gas containing silicon atoms (Si), carbon atoms (C) and hydrogen atoms (H) as constituent atoms, or a raw material containing silicon atoms (Si) and hydrogen atoms (H) as constituent atoms Raw material gas consisting of gas and carbon atoms (C) Mixed with each other.

In order to form the first layer composed of a-SiC (H, X) by the sputtering method, a monocrystalline or polycrystalline Si wafer or C (graphite) wafer, or Si and C are mixed. The wafer contained as a target is used as a target, and these are sputtered in a desired gas atmosphere.

For example, when using a Si wafer as a target, it is diluted with a raw material gas for introducing carbon atoms and / or hydrogen atoms and / or halogen atoms, if necessary with a diluting gas such as Ar or He, and then used for sputtering. It may be introduced into the deposition chamber, gas plasma of these gases is formed, and the Si wafer is sputtered.

Also, Si and C should be different targets or Si
When used as a single target containing a mixture of C and C, a raw material gas for introducing hydrogen atoms and / or halogen atoms as a gas for sputtering is diluted with a diluting gas, if necessary, and deposited for spattering. Introduced in the room,
Gas plasma may be formed and sputtered. As the raw material gas for introducing each atom used in the sputtering method, the raw material gas used in the glow discharge method can be used as it is.

Effectively used as such a source gas is hydrogen such as silane (Silane) having Si and H as constituent atoms such as SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ and Si ₄ H _10. Silicon gas, C and H as constituent atoms, for example, saturated hydrocarbons having 1 to 4 carbon atoms, ethylene hydrocarbons having 2 to 4 carbon atoms, acetylene hydrocarbons having 2 to 3 carbon atoms, and the like. .

Specifically, saturated hydrocarbons include methane (CH ₄ ),
Ethane (C ₂ H ₆ ), propane (C ₃ H ₈ ), n-butane (nC ₄
H ₁₀ ), pentane (C ₅ H ₁₂ ), ethylene hydrocarbons include ethylene (C ₂ H ₄ ), propylene (C ₃ H ₆ ), butene-
1 (C ₄ H ₈ ), butene-2 (C ₄ H ₈ ), isobutylene (C
₄ H ₈ ), pentene (C ₅ H ₁₀ ), acetylene-based hydrocarbons include acetylene (C ₂ H ₂ ), methylacetylene (C
₃ H ₄ ), butyne (C ₄ H ₆ ) and the like.

As a source gas containing Si, C and H as constituent atoms, Si (C
Mention may be made of alkyl silicides such as H ₃ ) ₄ and Si (C ₂ H ₅ ) ₄ . In addition to these raw material gases, H ₂ can of course be used as the raw material gas for introducing H.

When forming the first layer and the second layer of the present invention by a glow discharge method, a sputtering method, or an ion plating method, carbon atoms to be introduced into a-Si (H, X),
The content of group atom, group V atom or oxygen atom is controlled by controlling the gas flow rate and the gas flow rate ratio of the starting material introduced into the deposition chamber.

In addition, conditions such as the temperature of the support at the time of forming the light receiving layer, the gas pressure in the deposition chamber, and the discharge power are important factors for obtaining a light receiving member having desired characteristics, and the function of the layer to be formed is determined. It will be appropriately selected taking into consideration. Furthermore, since the conditions for forming these layers may differ depending on the type and amount of each of the above-mentioned atoms contained in the light-receiving layer, it is determined by taking into consideration the type of the contained atoms or the amount thereof. You also need to do it.

Specifically, the support temperature is usually 50 to 350 ° C.,
Particularly preferably, the temperature is 50 to 250 ° C. The gas pressure in the deposition chamber is usually 0.01 to 1 Torr, particularly preferably 0.1 to 0.
Set to 5 Torr. Although the discharge power is usually to the 0.005~50W / cm ^2, more preferably 0.01~30W / cm ^2,
It is particularly preferably 0.01 to 20 W / cm ² .

However, the specific conditions of the temperature of the support, the discharge power, and the gas pressure in the deposition chamber for forming layers are usually difficult to determine individually.
Therefore, in order to form an amorphous material layer with desired characteristics,
It is desirable to determine the optimum conditions for layer formation based on mutual and organic relationships.

The light-receiving member of the present invention requires that the light-receiving layer be formed so as to have at least a pair of non-parallel interfaces in the short range as described above, and therefore the light-receiving layer is formed on the support. The surface of the layer to be formed is formed so as not to be parallel to the surface of the support. To do so, the discharge power and gas pressure should be kept relatively high during the film formation operation. It will be done. The discharge power and gas pressure differ depending on the type of gas used, the material of the support, the shape of the support surface, the support temperature, etc., and are determined in consideration of these various conditions.

By the way, an oxygen atom contained in the light-receiving layer of the present invention,
In order to make the distribution of carbon atoms, nitrogen atoms, group III atoms or group V atoms, or hydrogen atoms and / or halogen atoms uniform, the above-mentioned various conditions should be kept constant when forming the light-receiving layer. It is necessary to keep.

Further, in the present invention, when forming the first layer, the distribution concentration of oxygen atoms, carbon atoms, nitrogen atoms, or Group III atoms or Group V atoms contained in the layer is changed in the layer thickness direction. In order to form a photoreceptor layer having a desired state of distribution in the layer thickness direction, if the glow discharge method is used,
The gas flow rate when introducing the oxygen atom, carbon atom, nitrogen atom, or the starting material gas for introducing the group III atom or the group V atom into the deposition chamber is appropriately changed according to the desired rate of change, and It is formed while keeping the conditions constant. And
In order to change the gas flow rate, specifically, the opening of a predetermined needle valve provided in the middle of the gas flow path system is gradually changed by some commonly used method such as manual operation or an external drive motor. All you have to do is operate.
At this time, the rate of change of the flow rate does not have to be linear, and the desired rate of content curve can be obtained by controlling the flow rate according to a previously designed rate-of-change curve using a microcomputer or the like.

When the first layer is formed by the sputtering method, it is desired to change the distribution concentration of oxygen atoms, carbon atoms, nitrogen atoms, group III atoms or group V atoms in the layer thickness direction in the layer thickness direction. In order to form a state of distribution in the layer thickness direction of, the starting material for introducing oxygen atom, carbon atom, nitrogen atom or group III atom or group V atom is gasified as in the case of using the glow discharge method. The gas flow rate when the gas is introduced into the deposition chamber is changed according to a desired rate of change.

〔Example〕

Hereinafter, the present invention will be described in more detail with reference to Examples 1 to 11, but the present invention is not limited thereto.

In each of the examples, the light receiving layer was formed using the glow discharge method. FIG. 20 shows an apparatus for manufacturing the light receiving member of the present invention by the glow discharge method.

In the gas cylinders 2002, 2003, 2004, 2005 and 2006 in the figure, raw material gases for forming the respective layers of the present invention are sealed, and as an example thereof, for example, 2002 is SiH ₄ gas (purity 99.999. %) Cylinder, 2003 B ₂ H ₆ diluted with H ₂
Gas (purity 99.999%, hereinafter abbreviated as B ₂ H ₆ / H ₂ ) cylinder, 2
004 is a CH ₄ gas (purity 99.999%) cylinder and 2005 is an N ₂ gas (purity 99.999%) cylinder.

A gas cylinder is required to allow these gases to flow into the reaction chamber 2001.
Check that valves 2022-2026 and leak valve 2035 of 2002-2006 are closed, and inflow valves 2012-2016,
After confirming that the outflow valves 2017 to 2021 and the auxiliary valves 2032 and 2033 are opened, the main valve 2034 is first opened to exhaust the reaction chamber 2001 and the gas pipe. Next, when the reading of the vacuum gauge 2036 reaches about 5 × 10 ^-6 Torr, the auxiliary valve 203
2, 2033, close outflow valves 2017-2021.

An example of forming the light receiving layer on the base cylinder 2037 will be described. Gas cylinder 2002 SiH ₄ gas, gas cylinder 20
From 03, open each of the B ₂ H ₆ / H ₂ gas valves 2022 and 2023 to adjust the pressure of the outlet pressure gauges 2027 and 2028 to 1 kg / cm ² , gradually open the inflow valves 2012 and 2013, and Controller 200
Inflow into 7,2008. Continued outflow valve 2017,201
8. The auxiliary valve 2032 is gradually opened to allow the gas to flow into the reaction chamber 2001. At this time, the outflow valve 2017, 2018 is adjusted so that the ratio of the SiH ₄ gas flow rate and the B ₂ H ₄ / H ₂ gas flow rate becomes a desired value.
Is adjusted, and the opening of the main valve 2034 is adjusted while observing the reading of the vacuum gauge 2036 so that the pressure in the reaction chamber 2001 becomes a desired value. Then, after confirming that the temperature of the base cylinder 2037 is set to a temperature in the range of 50 to 400 ° C. by the heater 2038, the power source 2040 is set to a desired electric power and a glow discharge is generated in the reaction chamber 2001. The base cylinder 20 while controlling the B ₂ H ₆ / H ₂ gas flow rate and the SiH ₄ gas flow rate according to a predesigned rate-of-change line using a microcomputer (not shown).
First, a first layer composed of a-Si containing boron atoms is formed on 37.

By the same operation as above, to form the second layer on the first layer, for example, SiH ₄ and NH ₃ gas, respectively, if necessary, diluted gas such as He, Ar, H ₂ etc. It is carried out by injecting into the reaction chamber 2001 at a desired gas flow rate and causing a glow discharge under the desired conditions.

Needless to say, all of the outflow valves other than the gas outflow valves necessary for forming each layer are closed, and when forming each layer, the gas used for forming the previous layer is the same as the reaction chamber.
In 2001, outflow valve To avoid remaining in the gas pipe from 2017-2021 to reaction chamber 2001, outflow valve
2017-2021 is closed, auxiliary valves 2032 and 2033 are opened, main valve 2034 is fully opened, and the system is temporarily evacuated to a high vacuum as needed.

Example 1 As a support, a cylindrical Al substrate (length 357 mm, diameter 80 m)
A groove was formed in m) by a lathe as shown in FIG. 21 (A).
The cross-sectional shape of the groove at this time was as shown in FIG. 21 (B). Note that FIG. 21 (A) is an overall view of the Al support, and FIG. 21 (B) is a view showing a sectional shape of a part of the surface thereof.

Next, on the Al support, under the conditions shown in Table 1 below,
A light-receiving layer was formed by the manufacturing apparatus shown in FIG.

For the light-receiving member thus obtained, the layer thickness of the light-receiving layer was measured with an electron microscope. The surface of the light-receiving layer was found to be non-parallel to the surface of the support, and the center of the Al support was found. The difference in average layer thickness between the both ends was 2 μm.

Further, these light receiving members were subjected to image exposure by irradiating a laser beam having a wavelength of 780 nm and a spot diameter of 80 μm by using the image exposure apparatus shown in FIG. 22, and developed and transferred to obtain an image. In the obtained image, no interference fringe pattern was observed, and an electrophotographic image having good practicability was obtained.

Note that FIG. 22 (A) is a schematic plan view schematically showing the entire exposure apparatus, and FIG. 22 (B) is a schematic side view schematically showing the entire exposure apparatus. In the figure, 2201 is a light receiving member, 2202
Is a semiconductor laser, 2203 is an fθ lens, and 2204 is a polygon mirror.

Example 2 A light-receiving layer was formed on an Al support in the same manner as in Example 1 except that the light-receiving layer was formed according to the layer forming conditions shown in Table 2.

The boron atom contained in the first layer is B ₂ H ₆ / SiF.
₄ ≈ 100 ppm, and it was introduced as much as possible so that all layers were doped with about 200 ppm.

For each of the light-receiving members thus obtained, the difference in the layer thickness of the light-receiving layer in their minute portions was measured by an electron microscope. The surface of the light-receiving layer was found to be non-parallel to the surface of the support. The difference in the average layer thickness between the center and both ends of the cylinder of the light receiving layer was 23 μm.

Further, when images were formed on these light receiving members in the same manner as in Example 1, no interference fringes were observed in each image, and those showing electrophotographic characteristics with good practicability were obtained. It was

Example 3 In the same manner as in Example 1, Al support members (cylinder Nos. 301 to 303) having the cross-sectional shapes shown in FIGS. 30 (C) to (E) were obtained.

A light-receiving layer was formed on the Al support (cylinder Nos. 301 to 303) under the layer forming conditions shown in Table 3. At this time, the gas flow rates of the B ₂ H ₆ / H ₂ gas and the H ₂ gas at the time of forming the first layer were automatically adjusted by microcomputer control according to the flow rate change line shown in FIG. Further, the boron atom contained in the first layer was introduced under the same conditions as in Example 2.

For each of the light-receiving members thus obtained, the difference in the layer thickness of the light-receiving layer in the minute portion was measured in the same manner as in Example 1. As a result, the surface of the light-receiving layer was not It was parallel. Further, the difference in average layer thickness between the center and both ends of the cylinder of the light receiving layer was 2.2 μm.

An image was formed on each of the light-receiving members in the same manner as in Example 1. In each of the obtained images, no interference fringes were observed, and those showing good electrophotographic properties were obtained. Was given.

Examples 4 to 11 A light receiving layer was formed on an Al support (cylinder Nos. 301 to 303) in the same manner as in Example 3 except that the light receiving layer was formed according to the layer forming conditions shown in Tables 4 to 11. Was formed. The flow rates of the gases used in forming the first layer in Examples 4, 7, 8, 10, and 11 were 24, 25, 26, 27, and 28, respectively.
Boron atoms, which were automatically adjusted by microcomputer control according to the flow rate change curve shown in the figure, and which were contained in the first layer were introduced under the same conditions as in Example 2.

An image was formed on the obtained light receiving member in the same manner as in Example 1.

In each of the obtained images, no occurrence of interference fringes was observed,
And it was of very good quality.

[Outline of Effects of the Invention] The light-receiving member of the present invention has the above-mentioned layer structure, whereby all the problems of the light-receiving member having the light-receiving layer composed of amorphous silicon can be solved. In particular, even when a laser light which is a coherent monochromatic light is used as a light source, it is possible to remarkably prevent the appearance of an interference fringe pattern in a formed image due to an interference phenomenon and form a very high quality visible image. it can.

Further, the light-receiving member of the present invention has a high photosensitivity in the entire visible light region, and is particularly excellent in the photosensitivity characteristic on the long wavelength side, so that it is particularly excellent in matching with a semiconductor laser, and has an optical response. It exhibits high electrical properties, excellent electrical, optical and photoconductive properties, electrical withstand voltage and use environment characteristics.

In particular, when it is applied as a photoreceptive member for electrophotography, it has no influence of residual potential on image formation, its electrical characteristics are stable, high sensitivity, and high SN ratio. Therefore, it is possible to stably and repeatedly obtain a high-quality image having excellent light fatigue resistance, repeated use characteristics, high density, clear halftone, and high resolution.

[Brief description of drawings]

FIG. 1 is a diagram schematically showing an example of the light receiving member of the present invention, and FIGS. 2 to 4 are for explaining the principle of preventing the generation of interference fringes in the light receiving member of the present invention. FIG. 2 is a partially enlarged view of FIG. 2, and FIG. 2 is a view showing that interference fringes can be prevented when the free surface and the interface between the first layer and the second layer are non-parallel; FIG. 4 is a diagram comparing the reflected light intensities when the interfaces of the constituent layers of the light-receiving layer are parallel and non-parallel. FIG. 4 shows that the layers constituting the first layer are two or more layers. It is a figure explaining prevention of generation of interference fringes in a case. FIG. 5 is a view showing a typical example of the surface shape of the support of the light receiving member of the present invention. 6 to 10 are views for explaining the generation of interference fringes in a conventional light receiving member, FIG. 6 is a view showing the generation of interference fringes in a light receiving layer, and FIG. Generation of interference fringes in layers, FIG. 8 is generation of interference fringes due to scattered light, FIG. 9 is generation of interference fringes due to scattered light in multilayer light-receiving layer, and FIG. 10 is configuration of light-receiving layer The generation of interference fringes when the interfaces of the layers are parallel is shown. FIGS. 11 to 19 show the distribution state of at least one selected from oxygen atoms, carbon atoms and nitrogen atoms, and Group III atoms or Group V atoms in the layer thickness direction in the first layer of the present invention. FIG.
In each figure, the vertical axis represents the layer thickness of the light receiving layer, and the horizontal axis represents the distribution concentration of each atom. FIG. 20 is an example of an apparatus for producing the light-receiving layer of the light-receiving member of the present invention, which is a schematic explanatory view of the production apparatus by the glow discharge method. 21st
(A) The figure is formed by mechanical processing with a lathe,
FIG. 21 is an overall view of a support of the light receiving member of the present invention,
(B)-(E) is a figure which shows the cross-sectional shape of a part of surface of this support body. FIG. 22 is a diagram for explaining an image exposure device using laser light. FIG. 23 to FIG. 28 are diagrams showing changes in the gas flow rate ratio in forming the light receiving layer of the present invention, in which the vertical axis represents the layer thickness of the light receiving layer and the horizontal axis represents the gas flow rate of the used gas. . 1 to 4, 100 ... light receiving member, 101 ... support, 102, 202, 302 ...
First layer, 402 ', 402 "... Layers that make up the first layer, 10
3,203,303,403 …… second layer, 104,204,304 …… free surface, 205,305 …… interface between the first layer and second layer, with reference to FIGS. 6 to 10, 601 …… bottom interface, 602 …… top interface, 701 ... Support, 7
02,703 ... Photoreceptive layer, 801 ... Support, 802 ... Photoreceptive layer, 901 ... Support, 902 ... First layer, 903 ... Second layer, 1
001 ... Support, 1002 ... Photoreceptive layer, 1003 ... Support surface, 1004 ... Photoreceptive layer surface, in Fig. 2001 ... Reaction chamber, 2002-2006 ... Gas cylinder, 2007-20
11 …… Mass flow controller, 2012 to 2016 …… Inflow valve, 2017 to 2021 …… Outflow valve, 2022 to 2026 …… Valve, 2027 to 2031 …… Pressure regulator, 2032,2033 …… Auxiliary valve, 2034 …… Main valve, 2035 ... Leak valve,
2036 …… vacuum gauge, 2037 …… base cylinder, 2038 …… heater heater, 2039 …… motor, 2040 …… high frequency power supply, in FIG. 22, 2201 …… light receiving member, 2202 …… semiconductor laser, 2203…
… Fθ lens, 2204 …… Polygon mirror.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kyosuke Ogawa 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) Reference JP-A-57-56846 (JP, A) JP-A-58 -139153 (JP, A) JP-A-60-225854 (JP, A)

Claims (8)

[Claims] 1. A first layer made of an amorphous material containing silicon atoms, and a silicon atom on a surface of a cylindrical support having periodic projections forming a spiral structure. A photoreceptor layer having a second layer composed of an amorphous material containing an atom selected from oxygen atom, carbon atom and nitrogen atom and an atom selected from hydrogen atom and halogen atom. In the light receiving member, the surface of the cylindrical support has a convex shape in which the cross-sectional shape of the projection on a plane including the central axis of the cylindrical support has a main peak and a sub-peak superimposed thereon. And the size of one period of the main peak is smaller than the diameter of the coherent irradiation light with which the cylindrical support is irradiated, and the light receiving layer on the surface of the cylindrical support is short-circuited. There is at least a pair of non-parallel interfaces in the range, and the non-parallel interfaces are The thickness direction and the light-receiving member, characterized in that those that are arrayed in at least one direction in the plane perpendicular. 2. The light-receiving layer contains an atom belonging to Group III or Group V of the periodic table.
Item 7. The light receiving member according to item. 3. The light receiving layer according to claim 1, wherein the light receiving layer has a charge injection blocking layer containing an atom belonging to Group III or Group V of the periodic table as one of the constituent layers. Receiving member. 4. The light receiving member according to claim 1, wherein the light receiving layer has a barrier layer as one of the constituent layers. 5. The light receiving member according to claim 1, wherein the short range is 0.3 to 500 μm. 6. The light receiving member according to claim 1, wherein the spiral structure is a multiple spiral structure. 7. The light receiving member according to claim 1, wherein the convex shape has an inclined surface. 8. The light receiving member according to claim 7, wherein the inclined surface is mirror-finished.