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JPH0719533B2 - Method of manufacturing rotating target for X-ray tube - Google Patents
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JPH0719533B2 - Method of manufacturing rotating target for X-ray tube - Google Patents

Method of manufacturing rotating target for X-ray tube

Info

Publication number
JPH0719533B2
JPH0719533B2 JP59127492A JP12749284A JPH0719533B2 JP H0719533 B2 JPH0719533 B2 JP H0719533B2 JP 59127492 A JP59127492 A JP 59127492A JP 12749284 A JP12749284 A JP 12749284A JP H0719533 B2 JPH0719533 B2 JP H0719533B2
Authority
JP
Japan
Prior art keywords
target
layer
ray tube
tungsten
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59127492A
Other languages
Japanese (ja)
Other versions
JPS617554A (en
Inventor
常雄 山田
馬場  昇
雄策 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59127492A priority Critical patent/JPH0719533B2/en
Publication of JPS617554A publication Critical patent/JPS617554A/en
Publication of JPH0719533B2 publication Critical patent/JPH0719533B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/04Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08Anodes; Anti cathodes
    • H01J35/10Rotary anodes; Arrangements for rotating anodes; Cooling rotary anodes
    • H01J35/108Substrates for and bonding of emissive target, e.g. composite structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00X-ray tubes
    • H01J2235/08Targets (anodes) and X-ray converters
    • H01J2235/083Bonding or fixing with the support or substrate
    • H01J2235/084Target-substrate interlayers or structures, e.g. to control or prevent diffusion or improve adhesion

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明はX線管用回転陽極ターゲツトの製造法にかかわ
り、特にセラミツクス基板を用いた大容量の大口径X線
管用回転ターゲツトの製造方法に関する。
Description: FIELD OF THE INVENTION The present invention relates to a method for producing a rotary anode target for an X-ray tube, and more particularly to a method for producing a large-capacity rotary target for a large-diameter X-ray tube using a ceramic substrate.

〔発明の背景〕[Background of the Invention]

X線管用回転ターゲツトは回転軸の上端に取り付けられ
た円盤状をなし、こ面に電子線を照射することによつて
X線を発生させるようになつてる。このようなX線管用
回転ターゲツトは、従来、焼結鍛造等の方法によるモリ
ブデン、タングステンから製造されていたが、近年医療
機器の急激な進歩の中で、大容量のターゲツトが要求さ
れてきた。大容量のターゲツトを得るためには単位面積
当りの熱量を大きくすること、また蓄積熱量を小さくす
る(ヒートシンクを大きくする)ため回転数をあげるこ
とが必要となる。このような要求に合致させるためのタ
ーゲツトが特公昭46−34863等に提案されている。この
ターゲツトは、電子照射面のみをタングステンあるいは
タングステン合金とし、その他の部分にこれらの金属よ
り比重が小さく、且つ比熱の大きいモリブデンを用いた
金属複合ターゲツトであり、さらにこのターゲツトの熱
放散をよくするために電子照射面とは反対側の面に酸化
物(主としてTiO2,Al2O3,ZrrO2,CaOの単体あるいは複
合)を溶射等により吹付け黒色化したもの、あるいは金
属複合ターゲツトの裏面に黒鉛を高融点金属ろうを用い
て貼り合わせた構造となつている。しかしこれらのター
ゲツトを大口径にしてターゲツトの回転数をあげること
は、ターゲツト自体の重量が重いことからX線管の他の
部品の強度などの制約から限度がある。従つて従来は大
口径にして回転数をあげることによつて大容量のターゲ
ツトとすることが困難であつた。密度の点からはグラフ
アイトベースターゲツトも考えられるが、回転強度の点
でセラミツクスに劣る。実測による直径150mmのグラフ
アイト盤は10000〜13000rpmで破壊するのに対し、SiCで
は40,000rpmまで回転数を上げることができ、高速回転
体として極めて優れていることが分つた。
The rotary target for the X-ray tube has a disk shape attached to the upper end of the rotary shaft, and the X-ray is generated by irradiating this surface with an electron beam. Conventionally, such rotary targets for X-ray tubes have been manufactured from molybdenum and tungsten by a method such as sintering forging, but in recent years due to the rapid progress of medical equipment, large-capacity targets have been required. In order to obtain a large-capacity target, it is necessary to increase the amount of heat per unit area and to increase the number of rotations in order to reduce the amount of accumulated heat (enlarge the heat sink). A target for meeting such requirements has been proposed in Japanese Examined Patent Publication No. 46-34863. This target is a metal composite target in which only the electron-irradiated surface is made of tungsten or a tungsten alloy, and molybdenum, which has a smaller specific gravity and a larger specific heat than these metals, is used in the other parts, and further improves the heat dissipation of this target. opposite side of the oxide on the surface (mainly TiO 2, Al 2 O 3, ZrrO 2, alone or combined in CaO) those that have been blown black by the thermal spraying, or the back surface of the metal composite Tagetsuto the electron irradiation surface for It has a structure in which graphite is bonded using a high melting point metal solder. However, increasing the rotational speed of the target by increasing the diameter of these targets is limited due to the weight of the target itself being heavy and the strength of other parts of the X-ray tube. Therefore, conventionally, it has been difficult to obtain a large-capacity target by increasing the number of rotations with a large diameter. A graphite base target can be considered in terms of density, but it is inferior to ceramics in terms of rotational strength. It was found that the graphite disk with a diameter of 150 mm broke at 10000 to 13000 rpm, whereas the rotation speed could be increased up to 40,000 rpm for SiC, which is extremely excellent as a high-speed rotating body.

〔発明の目的〕[Object of the Invention]

本発明の目的は、高出力の大口径X線管用回転ターゲツ
トを提供することにある。
An object of the present invention is to provide a high-power rotary target for a large-diameter X-ray tube.

〔発明の概要〕[Outline of Invention]

本発明者らは基板材質をセラミツクスとし、電子照射面
となるタングステン層を化学気相めつき(CVD)法によ
つて製作したターゲツトに着目した。このターゲツトに
おいて、タングステンの19.3g/cm3、モリブデンの10.2g
/cm3の密度に対し非常に小さい密度(例えばSiCで3.2g/
cm3)のセラミツクスがベースであるため、従来の金属
複合ターゲツトよりも軽量で径を大きくし、且つ高速回
転に耐えうるターゲツトとなる。しかしこのターゲツト
の問題点は電子線照射部のタングステン層とセラミツク
ス間での剥離が生じることである。
The present inventors have paid attention to a target in which the substrate material is ceramics and the tungsten layer serving as the electron irradiation surface is manufactured by the chemical vapor deposition (CVD) method. In this target, 19.3g / cm 3 of tungsten and 10.2g of molybdenum
Very low density for density of / cm 3 (eg 3.2g / SiC /
Since the base is a ceramic of cm 3 ), the target is lighter in weight and larger in diameter than the conventional metal composite target, and can withstand high-speed rotation. However, the problem with this target is that delamination occurs between the tungsten layer and the ceramic in the electron beam irradiation area.

本発明はターゲツト自体の軽量化と共にターゲツトを構
成する層の密着性を向上させるためにセラミツクス板上
にX線発生源材料からなる第1層を設けた後非酸化性雰
囲気中で熱処理することによつて基板と第1層との間に
セラミツクスと第1層との化合物層を形成したものであ
る。
According to the present invention, in order to reduce the weight of the target itself and improve the adhesion of the layers constituting the target, a heat treatment is performed in a non-oxidizing atmosphere after providing a first layer made of an X-ray source material on a ceramic plate. Therefore, a compound layer of ceramics and the first layer is formed between the substrate and the first layer.

本発明において、ターゲツトを製造するにはまずセラミ
ツクス板にX線発生源材料からなる層(第1層)がもう
けられる。X線発生源材料としてはWにReが0〜26重量
%含まれる材料が望ましい。X線発生源材料としてWの
みでもよいが、WにReを添加するとX線発生特性が良好
となる。ただしRe量が26重量%よりも多いとX線発生源
材料層がもろくなりX線特性が低下する。第1層の厚さ
は0.05mm〜2mm、特に0.1〜1.0mmが望ましい。第1層の
厚みが0.05mmよりも薄いとX線発生源材料層を電子線が
透過しX線の発生効率が低下する。一方2mmよりも厚く
しても層形成の作業性から非効率的でかつターゲツト窓
重量が大きくなり、X線発生の効果も向上しない。第1
層をセラミツクス板上に形成する方法として、CVD(化
学気相めっき)法を用いる。CVD法は緻密で細かい結晶
を、短時間で得ることができるので、スパッタリング
法、メッキ法、蒸着法、PVD法、溶射法に比べ好まし
い。
In the present invention, in order to manufacture a target, a layer (first layer) made of an X-ray generation source material is first provided on the ceramic plate. As the X-ray generation source material, a material containing 0 to 26% by weight of Re in W is desirable. Although W alone may be used as the X-ray generation source material, the addition of Re to W improves the X-ray generation characteristics. However, when the Re amount is more than 26% by weight, the X-ray generation source material layer becomes brittle and the X-ray characteristics deteriorate. The thickness of the first layer is preferably 0.05 mm to 2 mm, particularly 0.1 to 1.0 mm. If the thickness of the first layer is less than 0.05 mm, the electron beam will pass through the X-ray generation source material layer and the X-ray generation efficiency will decrease. On the other hand, even if the thickness is more than 2 mm, the workability of layer formation is inefficient, the target window weight becomes large, and the X-ray generation effect is not improved. First
A CVD (Chemical Vapor Deposition) method is used as a method for forming the layer on the ceramic plate. The CVD method is preferable in comparison with the sputtering method, the plating method, the vapor deposition method, the PVD method, and the thermal spraying method because a dense and fine crystal can be obtained in a short time.

第1層を形成した後、非酸化性雰囲気中で熱処理され
る。非酸化性雰囲気は真空又は還元性雰囲気とし、熱処
理温度は1000〜1400℃望ましい。この温度範囲はセラミ
ツクス板上に形成される第1層とセラミツクス間の密着
性をあげるためのものであり、熱処理温度が1000℃より
低い場合、第1層のX線発生源材料がセラミツクス板と
反応せず、この間に合金層が形成されず密着性改善の効
果がなくなる。一方熱処理温度が1400℃を超えると、X
線管発生源材料の炭化物反応が促進し、厚さも厚くなり
すぎるためもろくはく離しやすくなる。
After forming the first layer, heat treatment is performed in a non-oxidizing atmosphere. The non-oxidizing atmosphere is a vacuum or reducing atmosphere, and the heat treatment temperature is preferably 1000 to 1400 ° C. This temperature range is for improving the adhesion between the first layer formed on the ceramic plate and the ceramics, and when the heat treatment temperature is lower than 1000 ° C, the X-ray generation source material of the first layer is the ceramic plate. There is no reaction, and no alloy layer is formed during this time, and the effect of improving adhesion is lost. On the other hand, if the heat treatment temperature exceeds 1400 ℃, X
The carbide reaction of the material for the source of the wire tube is promoted, and the thickness becomes too thick, so that the material easily becomes brittle and peels.

本発明において絶縁性セラミツクスを基板に用いる時
は、スパツタ法などでセラミツクス板上に導電性膜をつ
けて回転軸とX線発生源材料(第1層)との導通をと
る。
In the present invention, when the insulating ceramics is used for the substrate, a conductive film is provided on the ceramics plate by a sputtering method or the like to establish conduction between the rotating shaft and the X-ray generation source material (first layer).

〔発明の実施例〕Example of Invention

実施例1 第1図にSiCベースターゲツトの基本的な構造を示す。
本実施例ではSiC板1上にタングステン2を六弗化タン
グステンと水素とを化学反応させるCVD法で被覆した。
この構造のもので密着性を向上させるための熱履歴を与
えた。条件としては真空中1400℃、1hrの熱処理であ
る。熱処理後のの断面構造は第2図に示す通り、SiC基
板1、タングステン2のほかにSiC基板1とタングステ
ン2の反応によつてケイ化物層3及び炭化物層4が現わ
れる。
Example 1 FIG. 1 shows the basic structure of a SiC-based target.
In this embodiment, a SiC plate 1 is coated with tungsten 2 by a CVD method in which tungsten hexafluoride and hydrogen are chemically reacted.
With this structure, a thermal history was given to improve the adhesion. The conditions are heat treatment in vacuum at 1400 ° C. for 1 hour. As shown in FIG. 2, the cross-sectional structure after the heat treatment shows the silicide layer 3 and the carbide layer 4 due to the reaction between the SiC substrate 1 and the tungsten 2 in addition to the SiC substrate 1 and the tungsten 2.

第3図にSiC基板1上にタングステン2をCVD法で被覆
し、次いで950℃の真空中で加熱したものの断面組織を
示し、第4図に1400℃で同様に加熱したものの断面組織
を示す。第3図ではSiC基板1、タングステン2の拡散
がない。これに対して第4図ではSiC基板1とタングス
テン2の反応したケイ化物層3、炭化物層4とが明確に
現われており、各層の拡散が行なわれていることがわか
る。これらの結果、950℃熱処理後の密着力は1.0Kg/mm2
であるのに比べて、1400℃熱処理後の密着力は4.0Kgf/m
m2と極めて優れた密着力を示したので新規の軽量高強度
ターゲツトとなり得ることが分つた。
FIG. 3 shows a cross-sectional structure of a SiC substrate 1 coated with tungsten 2 by a CVD method and then heated in a vacuum at 950 ° C., and FIG. 4 shows a cross-sectional structure of the same heated at 1400 ° C. In FIG. 3, there is no diffusion of the SiC substrate 1 and the tungsten 2. On the other hand, in FIG. 4, the silicide layer 3 and the carbide layer 4 in which the SiC substrate 1 and the tungsten 2 have reacted are clearly shown, and it can be seen that the diffusion of each layer is performed. As a result, the adhesion after heat treatment at 950 ° C is 1.0 kg / mm 2
However, the adhesion after heat treatment at 1400 ° C is 4.0 Kgf / m
It was found that it could be a new lightweight high-strength target because it showed extremely excellent adhesion with m 2 .

〔発明の効果〕〔The invention's effect〕

以上のように本発明によれば、ターゲツトとして用いる
前に熱履歴を与えてセラミツクス基板とX線発生源材層
との密着性を改善するので、電子線照射による急熱急冷
のヒートサイクルに耐えうる軽量、大口径高強度の回転
陽極ターゲツトが可能となる。
As described above, according to the present invention, a thermal history is given before use as a target to improve the adhesion between the ceramics substrate and the X-ray generation source material layer, so that it can withstand the heat cycle of rapid thermal quenching by electron beam irradiation. It enables a lightweight, large-diameter and high-strength rotating anode target.

【図面の簡単な説明】[Brief description of drawings]

第1図はセラミツクスベースターゲツトの熱処理前の構
造を示す断面図、第2図は本発明のターゲツトの構造の
一例を示す要部断面図、第3図は950℃の熱処理条件に
よるターゲツト断面の金属組織を示す顕微鏡写真、第4
図は1400℃の熱処理条件によるターゲツト断面の金属組
織を示す電子顕微鏡写真である。 1……SiC板、2……ターゲツト材、3……ケイ化物
層、4……炭化物層。
FIG. 1 is a cross-sectional view showing the structure of a ceramics base target before heat treatment, FIG. 2 is a cross-sectional view of an essential part showing an example of the structure of the target of the present invention, and FIG. 3 is a metal of the target cross-section under heat treatment conditions of 950 ° C. Micrograph showing the structure, No. 4
The figure is an electron micrograph showing the metal structure of the cross section of the target under the heat treatment condition of 1400 ° C. 1 ... SiC plate, 2 ... target material, 3 ... silicide layer, 4 ... carbide layer.

フロントページの続き (72)発明者 中川 雄策 茨城県日立市幸町3丁目1番1号 株式会 社日立製作所日立研究所内 (56)参考文献 特開 昭56−141153(JP,A) 特開 昭51−117593(JP,A)Front page continued (72) Inventor Yusaku Nakagawa 3-1-1 Sachimachi, Hitachi, Ibaraki, Hitachi Research Laboratory, Hitachi, Ltd. (56) References JP-A-56-141153 (JP, A) JP-A-SHO 51-117593 (JP, A)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】セラミックス板上にX線発生源材料からな
る第1層をCVD法により形成した後、1000〜1400℃の温
度で非酸化性雰囲気中熱処理することを特徴とするX線
管用回転ターゲットの製造方法。
1. A rotation for an X-ray tube, characterized in that a first layer made of an X-ray generation source material is formed on a ceramic plate by a CVD method and then heat-treated in a non-oxidizing atmosphere at a temperature of 1000 to 1400 ° C. Target manufacturing method.
【請求項2】特許請求の範囲第1項において、前記セラ
ミックスがSiCであることを特徴とするX線管用回転タ
ーゲットの製造方法。
2. The method of manufacturing a rotary target for an X-ray tube according to claim 1, wherein the ceramic is SiC.
JP59127492A 1984-06-22 1984-06-22 Method of manufacturing rotating target for X-ray tube Expired - Lifetime JPH0719533B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59127492A JPH0719533B2 (en) 1984-06-22 1984-06-22 Method of manufacturing rotating target for X-ray tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59127492A JPH0719533B2 (en) 1984-06-22 1984-06-22 Method of manufacturing rotating target for X-ray tube

Publications (2)

Publication Number Publication Date
JPS617554A JPS617554A (en) 1986-01-14
JPH0719533B2 true JPH0719533B2 (en) 1995-03-06

Family

ID=14961294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59127492A Expired - Lifetime JPH0719533B2 (en) 1984-06-22 1984-06-22 Method of manufacturing rotating target for X-ray tube

Country Status (1)

Country Link
JP (1) JPH0719533B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10032598B2 (en) 2016-07-26 2018-07-24 Neil Dee Olsen X-ray systems and methods including X-ray anodes

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2651370B1 (en) * 1989-08-31 1991-12-06 Comurhex ROTATING ANTICATHODE OF X-RAY TUBE.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT336143B (en) * 1975-03-19 1977-04-25 Plansee Metallwerk X-ray anode
JPS56141153A (en) * 1980-04-03 1981-11-04 Toshiba Corp Target for x-ray tube

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10032598B2 (en) 2016-07-26 2018-07-24 Neil Dee Olsen X-ray systems and methods including X-ray anodes

Also Published As

Publication number Publication date
JPS617554A (en) 1986-01-14

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