JPH0719871B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0719871B2 JPH0719871B2 JP59116374A JP11637484A JPH0719871B2 JP H0719871 B2 JPH0719871 B2 JP H0719871B2 JP 59116374 A JP59116374 A JP 59116374A JP 11637484 A JP11637484 A JP 11637484A JP H0719871 B2 JPH0719871 B2 JP H0719871B2
- Authority
- JP
- Japan
- Prior art keywords
- lead
- tab
- semiconductor device
- semiconductor
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/421—Shapes or dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】 〔技術分野〕 本発明は、半導体装置に係り、特に、半導体装置用リー
ドに適用して有効な技術に関するものである。Description: TECHNICAL FIELD The present invention relates to a semiconductor device, and more particularly to a technique effectively applied to a lead for a semiconductor device.
〔背景技術〕 近年、半導体装置の高集積化，高機能化が進み、半導体
素子（半導体ペレット）が大型化してきている。一方、
システムの小型化のため、パッケージは小型化しなけれ
ばならない。この結果、少なくとも従来のパッケージに
大きな半導体素子を収納しなければならない。BACKGROUND ART In recent years, as semiconductor devices have become highly integrated and highly functionalized, semiconductor elements (semiconductor pellets) have become larger. on the other hand,
For system miniaturization, the package must be miniaturized. As a result, large semiconductor devices must be housed in at least conventional packages.
これらの目的を達成するため、実装基板に実装するため
のリード間隔は規定の寸法のままとする一方、樹脂封止
部を大きくする手法が考えられる。In order to achieve these objects, a method is conceivable in which the lead interval for mounting on the mounting board is kept at a prescribed size while the resin sealing portion is enlarged.
しかし、この手法では、第１図に示すように、封止材１
とリード２との間に、リード２の折の曲げ時の応力（ス
トレス）が作用してパッケージにダメージを与え、リー
ド２の封止材１に覆われているインナー部（以下、イン
ナーリードという）2Aと封止材１との界面に隙間Ｓが発
生し、耐湿性の信頼度に重大な影響を及ぼすことがわか
った。However, in this method, as shown in FIG.
Between the lead 2 and the lead 2, a stress at the time of bending the lead 2 acts to damage the package, and the inner portion of the lead 2 covered with the sealing material 1 (hereinafter, referred to as an inner lead). ) It was found that a gap S is generated at the interface between 2A and the sealing material 1, which has a significant influence on the reliability of moisture resistance.
これらの改善策として、第２図に示すように、リード２
の封止材１に覆われていない部分（以下、アウターリー
ドという）2Bの折り曲げ部2Cを曲げ易くするために、ア
ウターリード2Bに切り欠き又は貫通孔等の応力集中部2D
を設けことが考えられる。これは特開昭52-52370号公報
に示されるように、ガラス封止型半導体装置において用
いられるリードフレームである。あるいは、インナーリ
ード2Aのアウターリード2Bに近い部分に、突起部2Eを設
けている。なお、第２図において、３は半導体ペレッ
ト、４はボンディングパッド、５は金（Au）線等のボン
ディングワイヤ、６はタブ、6Aはタブ吊りリードであ
る。As a remedy for these, as shown in FIG.
In order to make it easier to bend the bent portion 2C of the portion (hereinafter, referred to as the outer lead) 2B that is not covered with the sealing material 1 of the above, the stress concentration portion 2D such as a notch or a through hole is formed in the outer lead 2B.
It is possible to provide. This is a lead frame used in a glass-sealed semiconductor device as disclosed in Japanese Patent Laid-Open No. 52-52370. Alternatively, the protrusion 2E is provided in a portion of the inner lead 2A near the outer lead 2B. In FIG. 2, 3 is a semiconductor pellet, 4 is a bonding pad, 5 is a bonding wire such as gold (Au) wire, 6 is a tab, and 6A is a tab suspension lead.
しかしながら、前記のようにリード２を構成しても、リ
ード２が剛体が高く、かつ、直線部分が多いために、リ
ード２に外部応力や温度サイクル等の熱応力が加わる
と、封止材１とリード２との境界面に隙間ができたり、
封止部に亀裂ができることが、発明者の検討の結果、明
らかになった。However, even if the lead 2 is configured as described above, since the lead 2 has a high rigid body and many straight portions, when the lead 2 is subjected to external stress or thermal stress such as a temperature cycle, the sealing material 1 There is a gap at the interface between the lead and the lead 2,
As a result of a study by the inventor, it became clear that a crack was formed in the sealing portion.
本発明の目的は、半導体装置用リードにおいて、該リー
ドに外部応力や温度サイクル等の熱応力が加わっても、
封止材とリードとの境界面に隙間が発生したり、封止材
に亀裂が発生したりすることを防止することにより、半
導体装置の信頼性の向上及び長寿命化をはかることがで
きる技術手段を提供することにある。An object of the present invention is to provide a semiconductor device lead in which even if a thermal stress such as an external stress or a temperature cycle is applied to the lead,
A technique that can improve the reliability and extend the life of a semiconductor device by preventing a gap from being generated at the boundary surface between the encapsulating material and the leads and from causing a crack in the encapsulating material. To provide the means.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述及び添付図面によって明らかになるであろ
う。The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおりである。The outline of a typical one of the inventions disclosed in the present application will be briefly described as follows.
すなわち、リードフレームに半導体ペレットを固定し、
リードフレームのリードを半導体ペレットの電極にワイ
ヤで電気的接続し、前記半導体ペレット、前記ワイヤお
よび前記リードのインナー部を樹脂封止してなる半導体
装置において、前記リードのインナー部の先端部をボン
ディング部とし、その近傍にひっかけ部を設け、前記リ
ードのインナー部のアウター部に近い部分において、ア
ウター部のリードの幅より狭くしたくびれ部を設けてな
ることを特徴とする。これにより、リードに外部応力や
温度サイクル等の熱応力が加わっても、封止材とリード
との境界面に隙間が発生したり、封止部に亀裂が発生し
たりすることを防止し、半導体装置の信頼性の向上およ
び長寿命化をはかったものである。That is, fixing the semiconductor pellet to the lead frame,
In a semiconductor device in which a lead of a lead frame is electrically connected to an electrode of a semiconductor pellet with a wire, and the semiconductor pellet, the wire, and the inner portion of the lead are resin-sealed, the tip of the inner portion of the lead is bonded. In the vicinity of the outer part of the inner part of the lead, a constricted part is provided in the vicinity of the outer part of the lead part. Thereby, even if external stress or thermal stress such as temperature cycle is applied to the lead, a gap is generated at the boundary surface between the encapsulating material and the lead, or a crack is prevented from occurring in the encapsulating portion, This is intended to improve the reliability and extend the life of the semiconductor device.
以下、本発明の構成について、実施例とともに説明す
る。Hereinafter, the configuration of the present invention will be described together with examples.
第３図は、本発明を樹脂封止型半導体装置に適用した一
実施例の構成を説明するための平面図であり、リード形
状を示している。第３図において、第２図と同一機能を
有するものは同一符号を付け、その繰り返しの説明は省
略する。FIG. 3 is a plan view for explaining the configuration of an embodiment in which the present invention is applied to a resin-sealed semiconductor device, showing a lead shape. In FIG. 3, those having the same functions as those in FIG. 2 are designated by the same reference numerals, and repeated description thereof will be omitted.
第３図において、６は長辺および短辺を有する矩形のタ
ブであり、タブ６にそれらの辺に対応する長辺および短
辺を有する半導体ペレット（図示せず）が固定される。
複数のリード２を有し、タブ６に近接したそれらリード
２の先端に位置するボンディング領域13と半導体ペレッ
トの電極とがワイヤで電気的に接続される。タブ６はタ
ブ吊りリード6Aによってリードフレーム（図示せず）に
支持されている。In FIG. 3, 6 is a rectangular tab having long sides and short sides, and a semiconductor pellet (not shown) having long sides and short sides corresponding to those sides is fixed to the tab 6.
The plurality of leads 2 are provided, and the bonding region 13 located at the tip of the leads 2 adjacent to the tab 6 and the electrode of the semiconductor pellet are electrically connected by a wire. The tab 6 is supported by a lead frame (not shown) by a tab suspension lead 6A.
タブ６、半導体ペレット、前記ワイヤおよびリード２の
先端部を含むインナー部であるインナーリード2Aが封止
体である樹脂体により封止され、前記樹脂体の外部にリ
ード２のアウター部であるアウターリードが導出され
る。The inner lead 2A, which is the inner portion including the tab 6, the semiconductor pellet, the wire, and the tip of the lead 2, is sealed with a resin body that is a sealing body, and the outer body that is the outer portion of the lead 2 is outside the resin body. Leads are derived.
タブ６の長辺に近接するリード２のインナーリード2Aの
アウターリード側に近い部分には、その部分のリード２
両側から相対向する円弧状の凹部を設けることによって
リード２の幅を狭くしたくびれ部10が設けられている。In the portion near the outer lead side of the inner lead 2A of the lead 2 close to the long side of the tab 6, the lead 2 of that portion
A constricted portion 10 is provided which narrows the width of the lead 2 by providing arcuate concave portions facing each other from both sides.
このくびれ部10では剛性が低下し、リード２に外力や温
度サイクル等による応力が加わると、該応力がくびれ部
10に集中する。その結果インナーリード2Aのくびれ部10
が伸長・収縮等の変形をすることによって、加わった応
力を吸収する。When the lead 2 is subjected to stress due to an external force or temperature cycle, the stress is reduced in the necked portion 10, and the stress is reduced.
Focus on 10. As a result, the constricted part 10 of the inner lead 2A
Absorbs the applied stress by deforming such as expansion and contraction.
また、タブ６の長辺に近接するそのリード２のインナー
リード2Aに、タブ６の近傍にてアウターリードとは略直
交する方向にタブ６の周縁に沿ってアウターリードの側
面の位置より突出させた延設部が設けられ、その延設部
の先端をタブ６の周縁側とは反対の方向へ突出するよう
に幅広にしてひっかけ部11を成すボンディング領域13が
設けられている。Further, the inner lead 2A of the lead 2 close to the long side of the tab 6 is made to protrude from the side surface position of the outer lead along the peripheral edge of the tab 6 in the direction near the tab 6 and substantially orthogonal to the outer lead. The extended region is provided, and the bonding region 13 is formed so that the tip of the extended region is widened so as to project in the direction opposite to the peripheral side of the tab 6 and forms the hook 11.
また、タブ６の短辺に近接するリード２のボンディング
領域13近傍には、ひっかけ部11が設けられ、リード２の
インナーリード2Aのアウター側に近い部分のリード２に
リード２の幅を狭くしたくびれ部10が設けられる。Further, a hook portion 11 is provided in the vicinity of the bonding region 13 of the lead 2 close to the short side of the tab 6, and the width of the lead 2 is narrowed to the portion of the lead 2 near the outer side of the inner lead 2A. A waist portion 10 is provided.
このひっかけ部11は、くびれ部10の前記変形の際にひっ
かけ部11が封止体にひっかかることによって、少なくと
もリード２の先端のボンディング領域13の移動を防止す
るためのものである。更に、ひっかけ部11は、くびれ部
10よりもボンディング領域13側であるボンディング領域
13の近傍に設けられ、インナーリード2Aと封止体との界
面に隙間が生じないようにする。The hook portion 11 is for preventing movement of at least the bonding region 13 at the tip of the lead 2 due to the hook portion 11 being caught by the sealing body when the constricted portion 10 is deformed. Furthermore, the catch 11 is a constricted part.
Bonding area that is closer to bonding area 13 than 10
It is provided in the vicinity of 13 so that no gap is created at the interface between the inner lead 2A and the sealing body.
尚、くびれ部10或いはひっかけ部11はインナーリード2A
の夫々１箇所以上に設ける。The necked portion 10 or the hooked portion 11 is the inner lead 2A.
Provided at one or more places respectively.
以上説明したように、本願で開示した新規な技術手段に
よれば、次のような効果を得ることができる。As described above, according to the novel technical means disclosed in the present application, the following effects can be obtained.
（１）半導体装置におけるリードのインナー部の複数個
所にくびれ等のくびれ部及びひっかけ部を設けたことに
より、該リードに外部応力や温度サイクル等の熱応力が
加わっても、くびれ部が延びたり縮んだりしてその応力
を吸収し、ひっかけ部が封止材にひっかかり、少なくと
もボンディング領域が動かないようにしたので、封止材
とリードとの境界面に隙間が発生したり、封止部に亀裂
が発生したりすることを防止することができる。(1) By providing a constricted part such as a constricted part and a hooked part at a plurality of inner parts of a lead in a semiconductor device, the constricted part may extend even if external stress or thermal stress such as temperature cycle is applied to the lead. It shrinks and absorbs the stress, and the hooking part catches on the encapsulant, and at least the bonding area does not move.Therefore, there is a gap at the interface between the encapsulant and the lead, It is possible to prevent the occurrence of cracks.
（２）前記（１）により、半導体装置の信頼性の向上及
び長寿命化をはかることができる。(2) Due to the above (1), it is possible to improve the reliability and extend the life of the semiconductor device.
（３）くびれ部を円弧状の凹部によって形成し角部とな
らない構成としたので、角部の応力集中によるパッケー
ジの損傷を防止することができる。(3) Since the constricted portion is formed by the arcuate concave portion and does not become a corner portion, damage to the package due to stress concentration at the corner portion can be prevented.
（４）ボンディング部をタブの周縁に沿って延設したの
で、リークパスが長くなり、耐湿性が向上する。(4) Since the bonding portion is provided along the peripheral edge of the tab, the leak path becomes longer and the moisture resistance is improved.
以上、本発明を実施例にもとずき具体的に説明したが、
本発明は、前記実施例に限定されるものではなく、その
要旨を逸脱しない範囲において種々変更可能であること
はいうまでもない。The present invention has been specifically described above based on the embodiments.
It is needless to say that the present invention is not limited to the above-mentioned embodiments and can be variously modified without departing from the scope of the invention.
例えば、前記くびれ部及びひっかけ部の形状は、前記説
明した機能を果すものであればどのようなものでもよ
い。また、これらを設ける位置は必要に応じて決定され
るものである。For example, the shape of the constricted portion and the hooked portion may be any shape as long as the functions described above are fulfilled. Moreover, the positions where these are provided are determined as necessary.
第１図は、従来の半導体装置におけるリードの問題点を
説明するための一部断面図、 第２図は、本発明に係る半導体装置用リードの問題点を
説明するための要部平面図、 第３図は、本発明を封止型半導体装置に適用した一実施
例の構成を説明するための平面図である。 図中、１……封止材、２……リード、2A……インナーリ
ード、３……半導体ペレット、４……ボンディングパッ
ド、５……ボンディングワイヤ、６……タブ、6A……タ
ブ吊りリード、10……くびれ部、11……ひっかけ部であ
る。FIG. 1 is a partial cross-sectional view for explaining a problem of a lead in a conventional semiconductor device, and FIG. 2 is a main part plan view for explaining a problem of a lead for a semiconductor device according to the present invention. FIG. 3 is a plan view for explaining the configuration of an embodiment in which the present invention is applied to a sealed semiconductor device. In the figure, 1 ... Sealing material, 2 ... Lead, 2A ... Inner lead, 3 ... Semiconductor pellet, 4 ... Bonding pad, 5 ... Bonding wire, 6 ... Tab, 6A ... Tab suspension lead , 10 ... constricted part, 11 ... trapped part.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 若島 喜昭 東京都小平市上水本町1450番地 株式会社 日立製作所武蔵工場内 (72)発明者 川越 紘人 東京都小平市上水本町1450番地 株式会社 日立製作所武蔵工場内 (56)参考文献 特開 昭57−192055（ＪＰ，Ａ) 特開 昭57−188857（ＪＰ，Ａ) 特開 昭51−65566（ＪＰ，Ａ) 実開 昭48−38769（ＪＰ，Ｕ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshiaki Wakashima 1450 Kamimizuhonmachi, Kodaira-shi, Tokyo Inside Musashi Factory, Hitachi, Ltd. (72) Hiroto Kawagoe 1450, Kamimizumoto-cho, Kodaira-shi, Tokyo Hitachi, Ltd. (56) References JP 57-192055 (JP, A) JP 57-188857 (JP, A) JP 51-65566 (JP, A) Seki 48-38769 (JP , U)
Claims (2)
らの辺に対応する長辺および短辺を有する半導体ペレッ
トが固定され、複数のリードを有し、前記タブに近接し
たそれらリードの先端に位置するボンディング部と半導
体ペレットの電極とがワイヤで電気的に接続され、前記
タブ、半導体ペレット、前記ワイヤおよび前記リードの
先端部を含むインナー部が樹脂体により封止され、前記
樹脂体の外部に前記リードのアウター部が導出されてな
る半導体装置において、前記タブの長辺に近接するリー
ドのインナー部のアウター部側に近い部分に、その部分
のリード両側から相対向する円弧状の凹部を設けること
によってリードの幅を狭くしたくびれ部が設けられ、か
つ前記タブの長辺に近接するそのリードのインナー部
に、前記タブの近傍にてアウター部とは略直交する方向
にタブの周縁に沿ってアウター部の側面の位置より突出
させた延設部が設けられ、その延設部の先端を前記タブ
の周縁側とは反対の方向へ突出するように幅広にしてひ
っかけ部を成すボンディング部が設けられてなることを
特徴とする半導体装置。1. A semiconductor pellet having a long side and a short side corresponding to those sides is fixed to a rectangular tab having a long side and a short side, and a plurality of leads are provided. The bonding portion located at the tip and the electrode of the semiconductor pellet are electrically connected by a wire, and the inner portion including the tip portion of the tab, the semiconductor pellet, the wire and the lead is sealed by a resin body, and the resin body is formed. In a semiconductor device in which the outer portion of the lead is led out to the outside, a portion of the inner portion of the lead, which is close to the long side of the tab, close to the outer portion of the inner portion of the lead has a circular arc shape facing each other from both sides of the lead. A constriction is formed by narrowing the width of the lead by providing a recess, and the inner part of the lead near the long side of the tab is near the tab. An extension portion is provided along the peripheral edge of the tab in a direction substantially orthogonal to the outer portion so as to project from the position of the side surface of the outer portion, and the tip of the extension portion is in a direction opposite to the peripheral edge side of the tab. A semiconductor device comprising: a bonding portion which is wide so as to project inward and forms a hook portion.
ィング部近傍にひっかけ部が設けられ、前記リードのイ
ンナー部のアウター側に近い部分のリードにリードの幅
を狭くしたくびれ部が設けられていることを特徴とする
特許請求の範囲第１項記載の半導体装置。2. A hook portion is provided in the vicinity of a bonding portion of a lead close to the short side of the tab, and a constricted portion having a narrow width is provided in a lead near an outer side of an inner portion of the lead. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59116374A JPH0719871B2 (en) | 1984-06-08 | 1984-06-08 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59116374A JPH0719871B2 (en) | 1984-06-08 | 1984-06-08 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60261161A JPS60261161A (en) | 1985-12-24 |
| JPH0719871B2 true JPH0719871B2 (en) | 1995-03-06 |
Family
ID=14685399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59116374A Expired - Lifetime JPH0719871B2 (en) | 1984-06-08 | 1984-06-08 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0719871B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02143437A (en) * | 1988-11-24 | 1990-06-01 | Nec Corp | Semiconductor device |
| JPH02271561A (en) * | 1989-04-12 | 1990-11-06 | Nec Corp | Resin-sealed semiconductor device |
| EP1947703B1 (en) * | 2005-10-14 | 2019-08-14 | Sharp Kabushiki Kaisha | Interconnector, solar battery string using such interconnector |
| JP4040662B1 (en) * | 2006-07-13 | 2008-01-30 | シャープ株式会社 | Solar cell, solar cell string and solar cell module |
| JP4040659B2 (en) * | 2006-04-14 | 2008-01-30 | シャープ株式会社 | Solar cell, solar cell string, and solar cell module |
| US8440907B2 (en) | 2006-04-14 | 2013-05-14 | Sharp Kabushiki Kaisha | Solar cell, solar cell string and solar cell module |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57188857A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Semiconductor device |
| JPS57192055A (en) * | 1981-05-22 | 1982-11-26 | Hitachi Ltd | Semiconductor device and leadframe used for assembling said semiconductor |
-
1984
- 1984-06-08 JP JP59116374A patent/JPH0719871B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60261161A (en) | 1985-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |