JPH0719922B2 - Superconductor and integrated superconducting device - Google Patents
Superconductor and integrated superconducting deviceInfo
- Publication number
- JPH0719922B2 JPH0719922B2 JP62189282A JP18928287A JPH0719922B2 JP H0719922 B2 JPH0719922 B2 JP H0719922B2 JP 62189282 A JP62189282 A JP 62189282A JP 18928287 A JP18928287 A JP 18928287A JP H0719922 B2 JPH0719922 B2 JP H0719922B2
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- Prior art keywords
- superconductor
- substrate
- single crystal
- film
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002887 superconductor Substances 0.000 title description 27
- 239000000758 substrate Substances 0.000 claims description 34
- 239000013078 crystal Substances 0.000 claims description 32
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 150000002603 lanthanum Chemical class 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 239000010408 film Substances 0.000 description 19
- 150000001875 compounds Chemical class 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910016036 BaF 2 Inorganic materials 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 229910002480 Cu-O Inorganic materials 0.000 description 3
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 239000011882 ultra-fine particle Substances 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- CNYFJCCVJNARLE-UHFFFAOYSA-L calcium;2-sulfanylacetic acid;2-sulfidoacetate Chemical compound [Ca+2].[O-]C(=O)CS.[O-]C(=O)CS CNYFJCCVJNARLE-UHFFFAOYSA-L 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- -1 so that Si Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は超電導体に関するものである。特に化合物薄膜
超電導体に関するものである。TECHNICAL FIELD OF THE INVENTION The present invention relates to superconductors. In particular, it relates to a compound thin film superconductor.
従来の技術 Ｙ−Ba−Cu−Ｏ系がより高温の超電導体であることが最
近提案された。［M.K.Wu等、フィジカル レビュー レ
ターズ（Physical Review Latters）Vol.58,No.9,908-9
10（1987）］ Ｙ−Ba−Cu−Ｏ系の材料の超電導機構の詳細は明らかで
はないが、転移温度が液体窒素温度以上に高くなる可能
性があり、高温超電導体として従来の２元系化合物よ
り、より有望な特性が期待される。Prior Art It has recently been proposed that the Y-Ba-Cu-O system be a higher temperature superconductor. [MKWu et al. Physical Review Latters] Vol.58, No.9,908-9
10 (1987)] The details of the superconducting mechanism of Y-Ba-Cu-O-based materials are not clear, but the transition temperature may be higher than the liquid nitrogen temperature. More promising properties are expected than compounds.
発明が解決しようとする問題点 しかしながら、Ｙ−Ba−Cu−Ｏ系の材料は、現在の技術
では焼結という過程でしか形成できないため、セラミッ
クの粉末あるいはブロックの形状でしか得られない。一
方、この種の材料を実用化する場合、薄膜化あるいは線
状化が強く要望されているが、従来の技術では、いずれ
も非常に困難とされている。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention However, since the Y-Ba-Cu-O-based material can be formed only in the process of sintering in the present technology, it can be obtained only in the form of ceramic powder or block. On the other hand, when this kind of material is put to practical use, thinning or linearization is strongly demanded, but it is very difficult with the conventional techniques.
本発明者らは、この種の材料を例えばスパッタリング法
等の薄膜化手法を用いると、薄膜状の高温超電導体が形
成されることを発見し、これにもとづいて新規な超電導
体構成を発明した。The present inventors have discovered that a thin film high-temperature superconductor is formed by using a thinning method such as a sputtering method for this kind of material, and based on this, invented a novel superconductor structure. .
問題点を解決するための手段 本発明の超電導体は、BaTiO3,CaTiO3,CdTiO3,PbZrO3,Pb
HfO3等のペロブスカイト構造単結晶、CaF2,BaF2,SrF2等
のCaF2型単結晶あるいはZnS,ZnO,ZnSe,CdS等のZnO型単
結晶基体上に少なくともＡ元素、Ｂ元素およびCuを含む
酸化物で、元素のモル比率が の被膜を付着させた事を特徴とするものである。ここ
に、ＡはSc、Ｙおよびランタン系列元素（原子番号57〜
71）のうちすくなくとも一種、ＢはIIa族元素のうちの
すくなくとも一種の元素を含む。Means for Solving Problems The superconductor of the present invention is made of BaTiO 3 , CaTiO 3 , CdTiO 3 , PbZrO 3 , Pb.
A perovskite structure single crystal such as H f O 3 or the like, a CaF 2 type single crystal such as CaF 2 , BaF 2 or SrF 2 or a ZnO type single crystal substrate such as ZnS, ZnO, ZnSe or CdS at least the A element, B element and An oxide containing Cu with a molar ratio of elements It is characterized in that the film of (3) is attached. Here, A is Sc, Y and a lanthanum series element (atomic number 57 to
71) and B contains at least one element of the IIa group elements.
の３元化合物被膜を付着させたことを特徴としている。
ここにＡはSc,Yおよびランタン系列元素（原子番号57-7
1）のうちすくなくとも一種、ＢはBa,Sr,Ca,Be,Mgなど
のIIa族元素のうち少なくとも一種の元素を示す。 It is characterized in that a ternary compound film of (3) is attached.
Here, A is Sc, Y and lanthanum series element (atomic number 57-7
At least one of 1), and B represents at least one element of Group IIa elements such as Ba, Sr, Ca, Be, and Mg.
作用 本発明にかかる超電導体は、超電導体を薄膜化している
所に大きな特色がある。すなわち、薄膜化は超電導体の
素材を原子状態という極微粒子に分解してから基体上に
堆積させるから、形成された超電導体の組成は本質的
に、従来の焼結体に比べて均質である。したがって非常
に高精度の超電導体が本発明で実現される。さらに、本
発明の超電導体は単結晶基体上に半導体薄膜をエピタキ
シャル成長させることができ、超電導デバイスと半導体
デバイスの集積化に好都合である。Action The superconductor according to the present invention has a great feature in that the superconductor is made into a thin film. That is, in thinning, the material of the superconductor is decomposed into ultrafine particles in the atomic state and then deposited on the substrate, so that the composition of the formed superconductor is essentially more uniform than that of the conventional sintered body. . Therefore, a very high-precision superconductor is realized by the present invention. Furthermore, the superconductor of the present invention can epitaxially grow a semiconductor thin film on a single crystal substrate, which is convenient for integrating a superconducting device and a semiconductor device.
実施例 本発明を図面とともに説明する。EXAMPLES The present invention will be described with reference to the drawings.
第１図において、３元化合物被膜12は基体11の表面13上
に例えばスパッタリング法で形成する。この場合、基体
11は、超電導を示す３元化合物被膜12の保持を目的とし
ている。第１図の基体11に機能性から見て、最適の材料
があることを見い出した。In FIG. 1, the ternary compound film 12 is formed on the surface 13 of the substrate 11 by, for example, a sputtering method. In this case, the substrate
11 is intended to hold the ternary compound film 12 showing superconductivity. From the viewpoint of functionality, it has been found that there is an optimum material for the substrate 11 in FIG.
すなわち、結晶性の高い３元化合物被膜12を基体11の表
面13に形成させるためには、単結晶の基体が有効であ
る。本発明者らは３元化合物被膜の超電導体として有効
な基体材料を調べた結果、基体として、BaTiO3,CaTiO3,
CdTiO3,PbZrO3,PbHfO3等のペロブスカイト構造単結晶、
CaF2,BaF2,SrF2等のCaF2型単結晶あるいはZnS,ZnO,ZnS
e,CdS等のZnO型単結晶が有効であることを確認した。も
っとも、これは表面13に効果的に結晶性の高い被膜12を
成長させるためのものであるから、少なくとも基体表面
13が単結晶であればよい。That is, in order to form the ternary compound film 12 having high crystallinity on the surface 13 of the substrate 11, a single crystal substrate is effective. As a result of investigating a base material effective as a superconductor for a ternary compound film, the present inventors have found that BaTiO 3 , CaTiO 3 ,
CdTiO 3 , PbZrO 3 , PbH f O 3 etc. perovskite structure single crystal,
CaF 2, BaF 2, SrF 2, etc. CaF 2 type single crystal or ZnS of, ZnO, ZnS
It was confirmed that ZnO type single crystals such as e and CdS were effective. However, since this is for effectively growing the highly crystalline film 12 on the surface 13, at least the substrate surface
13 may be a single crystal.
第２図は、CaTiO3単結晶（100）面を基体11に用い、ス
パッタリング蒸着法で主成分(A,B)6Cu6O14の３元化合物
被膜12を付着させた時の３元化合物被膜12のＸ線回析ス
ペクトルを示す。第２図において、被膜は（002）配向
を示し、この場合被膜12は良好な超電導を示した。これ
は、CaTiO3の結晶構造が超電導被膜と類似で、かつ格子
定数もａ＝3.827Aと被膜の格子定数3.9Aに非常に近く、
結晶性の良好な超電導被膜が得られたためと考えられ
る。FIG. 2 shows a ternary compound when a CaTiO 3 single crystal (100) surface is used as a substrate 11 and a ternary compound film 12 of a main component (A, B) 6 Cu 6 O 14 is deposited by a sputtering deposition method. The X-ray diffraction spectrum of the coating 12 is shown. In Figure 2, the coating exhibited a (002) orientation, where coating 12 exhibited good superconductivity. This is because the crystal structure of CaTiO 3 is similar to that of a superconducting film, and the lattice constant is a = 3.827A, which is very close to the lattice constant of the film, 3.9A.
It is considered that the superconducting film having good crystallinity was obtained.
この実施例では被膜12の膜厚は２μｍであるが、膜厚は
0.1μｍかそれ以下の薄い場合、10μｍ以上の厚い場合
も超電導が発生することを確認した。In this embodiment, the film thickness of the coating film 12 is 2 μm, but the film thickness is
It was confirmed that superconductivity occurs even when the thickness is 0.1 μm or less and when it is 10 μm or more.
本発明者らは、CaTiO3以外の結晶性基体についての有効
性を詳細に実験的に調べ、BaTiO3,CdTiO3,PbZrO3,PbHfO
3等のペロブスカイト構造単結晶の場合、いずれも超電
導を示すことが確認され、これらの結晶がこの種の基体
に有効であることが判明した。もっとも、これは基体表
面13に効果的に結晶性の高い被膜12を成長させるための
もので、少なくとも基体表面13が単結晶であればよい。The inventors of the present invention have experimentally investigated in detail the effectiveness with respect to crystalline substrates other than CaTiO 3 , and have found that BaTiO 3 , CdTiO 3 , PbZrO 3 , PbH f O
In the case of perovskite structure single crystals such as 3 , all were confirmed to show superconductivity, and it was found that these crystals are effective for this type of substrate. However, this is for effectively growing the coating film 12 having high crystallinity on the substrate surface 13, and at least the substrate surface 13 may be a single crystal.
本発明の超電導体Ａ−Ｂ−Cu−Ｏは結晶構造や組成式が
まだ明確には決定されていないが、酸素欠損ペロブスカ
イト(A,B)6Cu6O14ともいわれている。本発明者等は作製
された被膜において元素比率が の範囲であれば、臨界温度に多少の差があっても超電導
現象が見出されることを確認した。単結晶基体に基体温
度をエピタキシヤル温度以上にあげて、単結晶被膜の超
電導材料を形成し得るが、基体温度を高めると正方晶ペ
ロブスカイト構造が生成し易く、再現性よく超電導体が
得られない場合が多い。したがって、本発明の実施例に
述べたごとく、基体温度はむしろ低い範囲に並びアモル
ファスないしは微結晶構造の複合化合物被膜を形成した
後、熱処理により結晶化する方が再現性よく超電導体が
得られることを本発明者らは実験的に確認した。Although the crystal structure and composition formula of the superconductor A-B-Cu-O of the present invention have not been clearly determined, they are also called oxygen-deficient perovskite (A, B) 6 Cu 6 O 14 . The present inventors have found that the element ratio in the produced coating is It was confirmed that the superconducting phenomenon was found even if there was some difference in the critical temperature within the range of. It is possible to raise the substrate temperature of the single-crystal substrate above the epitaxial temperature to form the superconducting material of the single-crystal film, but if the substrate temperature is raised, a tetragonal perovskite structure is likely to be formed and a superconductor cannot be obtained with good reproducibility. In many cases. Therefore, as described in the embodiments of the present invention, it is possible to obtain a superconductor with good reproducibility by crystallizing by heat treatment after forming a composite compound film having an amorphous or microcrystalline structure in which the substrate temperature is arranged in a rather low range. The present inventors have confirmed experimentally.
この場合、単結晶構造の基体は、熱処理過程において被
膜の固相エピタキシャル成長を助け有効である。なお、
超電導被膜の結晶性特に要求されない場合（急峻な超電
導体転位が不要の時）は、多結晶の磁器基体が有効であ
る。In this case, the single crystal structure substrate is effective in assisting the solid phase epitaxial growth of the coating during the heat treatment process. In addition,
If the crystallinity of the superconducting film is not particularly required (when a steep superconductor dislocation is not required), a polycrystalline porcelain substrate is effective.
なお、スパッタリング蒸着ではターゲットとして、焼結
したＡ−Ｂ−Cu−Ｏセラミックスを用いるが、基体温度
が200〜500℃の範囲では、ターゲットの金属成分と形成
された薄膜における成分と殆ど一致している事を本発明
者らは確認した。したがって、ターゲット組成は、被膜
の最適範囲の であることを本発明者らは確認した。この場合、ターゲ
ットは板状あるいは、円筒状のセラミックス以外に、粒
状あるいは粉末状の焼結体であってもスパッタリング蒸
着に有効である。In sputtering deposition, a sintered AB-Cu-O ceramic is used as a target, but when the substrate temperature is in the range of 200 to 500 ° C., the metal components of the target and the components of the formed thin film are almost the same. The present inventors have confirmed that Therefore, the target composition should be within the optimum range of the coating. The present inventors have confirmed that In this case, the target is not limited to the plate-shaped or cylindrical ceramics, but a granular or powdered sintered body is effective for the sputtering deposition.
本発明者らはこの種の結晶性基体についてさらに詳細に
有効性を調べた結果、ペロブスカイト構造物質以外にCa
F2,BaF2,SrF2などのCaF2型結晶や、ZnS,ZnSe,ZnO,CdS等
のZnO型結晶も有効であることを確認した。The present inventors have examined the effectiveness of this type of crystalline substrate in more detail, and as a result, in addition to the perovskite structure substance, Ca
It was confirmed that CaF 2 type crystals such as F 2 , BaF 2 and SrF 2 and ZnO type crystals such as ZnS, ZnSe, ZnO and CdS were also effective.
さらに、本発明者らは、CaF2等単結晶の表面にSi,GaAs
等の半導体単結晶薄膜をエピタキシャル成長させること
ができ、これを用いて超電導デバイスと半導体デバイス
を集積化できることを確認した。Furthermore, the present inventors have found that Si, GaAs is formed on the surface of a single crystal such as CaF 2.
It was confirmed that a semiconductor single crystal thin film such as the above can be epitaxially grown, and that the superconducting device and the semiconductor device can be integrated by using this.
すなわち、第３図は、本発明にかかる集積化超電導装置
の基本構造で、例えば、CaF2（100）面単結晶基体31上
に、エピタキシャル成長させた弱結合部32を有するＹ−
Ba−Cu−Ｏ系（002）面単結晶超電導薄膜33と同じくエ
ピタキシャル成長させたSi（100）面単結晶デバイス34
が集積されている。さらに、GaP,ZnS半導体デバイス
も、Siと同様に集積化できることを本発明者らは確認し
た。That is, FIG. 3 shows a basic structure of an integrated superconducting device according to the present invention, for example, a Y- having a weakly bonded portion 32 epitaxially grown on a CaF 2 (100) plane single crystal substrate 31.
Ba-Cu-O (002) plane single crystal superconducting thin film 33 and Si (100) plane single crystal device 34 epitaxially grown
Are accumulated. Furthermore, the present inventors have confirmed that GaP, ZnS semiconductor devices can be integrated similarly to Si.
第３図の基本構造に関連し、CaF2単結晶以外にBaF2,SrF
2単結晶も基体として有効であることを本発明者らは確
認した。この場合、BaF2,SrF2はCaF2より格子定数が大
きいため、Si,GaP半導体よりもこの種の基体上に集積さ
れる半導体としては、Ge,GaAs,ZnSe,InP,CdS,CdSe,PbS,
PbSe,InAs等が有効であることを本発明者らは確認し
た。特に、GaAs半導体デバイスのためには、CaF2とSrF2
との混晶体Ca0.44Sr0.56F2単結晶基体が格子不整がな
く、有効であることを本発明者らは確認した。In relation to the basic structure of Fig. 3, in addition to CaF 2 single crystal, BaF 2 , SrF
The present inventors have confirmed that 2 single crystals are also effective as a substrate. In this case, BaF 2 and SrF 2 have a larger lattice constant than CaF 2, so that Si, GaP semiconductors, Ge, GaAs, ZnSe, InP, CdS, CdSe, PbS are semiconductors that are integrated on this type of substrate. ,
The present inventors have confirmed that PbSe, InAs, etc. are effective. Especially for GaAs semiconductor devices, CaF 2 and SrF 2
The present inventors have confirmed that the mixed crystal Ca 0.44 Sr 0.56 F 2 single crystal substrate with is effective without any lattice irregularity.
以下本発明の内容をさらに深く理解させるために、さら
に具体的な具体実施例を示す。Hereinafter, more specific examples will be shown in order to deepen the understanding of the contents of the present invention.
（具体実施例） CaTiO3単結晶（100）面を基体11として用い、焼結したY
2Ba4Cu6O14ターゲットの高周波プレナーマグネトロンス
パッタにより、被膜12を付着させた。この場合、Arガス
の圧力は0.5Pa、スパッタリング電力150W、スパッタリ
ング時間６時間、被膜の膜厚５μｍ、基体温度700℃で
あった。(Specific Example) Sintered Y using a CaTiO 3 single crystal (100) surface as a substrate 11
The coating 12 was deposited by high frequency planar magnetron sputtering of a 2 Ba 4 Cu 6 O 14 target. In this case, the Ar gas pressure was 0.5 Pa, the sputtering power was 150 W, the sputtering time was 6 hours, the film thickness was 5 μm, and the substrate temperature was 700 ° C.
被膜の室温抵抗率は10mΩcm、超電導転移温度90°Ｋで
あった。The room temperature resistivity of the coating was 10 mΩcm, and the superconducting transition temperature was 90 ° K.
この種の３元化合物超電導体(A,B)6Cu6O14の構成元素Ａ
およびＢの変化による超電導特性の変化の詳細は明らか
ではない。ただＡは、３価,Bは２価を示しているのは事
実ではある。Ａ元素としてＹについて例をあげて説明し
たが、ScやLa、さらにランタン系列の元素（原子番号57
〜71）でも、超電導転移温度が変化する程度で本質的な
発明の特性を変えるものではない。Constituent element A of this type of ternary compound superconductor (A, B) 6 Cu 6 O 14
The details of the change in superconducting properties due to changes in B and B are not clear. However, it is true that A is trivalent and B is bivalent. Although Y has been described as an example of the A element, Sc, La, and lanthanum series elements (atomic number 57
Even in the case of 71 to 71), the essential characteristics of the invention are not changed by the degree to which the superconducting transition temperature changes.
また、Ｂ元素においても、Sr、Ca、Ba等IIa族元素の変
化は超電導転移温度を10°Ｋ程度変化させるが、本質的
に本発明の特性を変えるものではない。Also in the B element, the change of the group IIa element such as Sr, Ca and Ba changes the superconducting transition temperature by about 10 ° K, but does not essentially change the characteristics of the present invention.
とりわけ、本発明にかかる超電導体は、超電導体を薄膜
化している所に大きな特色がある。すなわち、薄膜化は
超電導体の素材を原子状態という極微粒子に分解してか
ら、基体上に堆積させるから、形成された超電導体の組
成は本質的に、従来の焼結体に比べて均質である。した
がって、非常に高精度の超電導体が本発明で実現され
る。In particular, the superconductor according to the present invention has a great feature in that the superconductor is made into a thin film. That is, thinning decomposes the material of the superconductor into ultrafine particles in the atomic state and then deposits it on the substrate, so that the composition of the formed superconductor is essentially homogeneous compared to the conventional sintered body. is there. Therefore, a very high precision superconductor is realized by the present invention.
発明の効果 すでに説明したごとく、本発明を用いてSiあるいはGaAs
などのデバイスとの集積化が可能であるとともに、ジョ
セフソン素子など各種の超電導デバイスの要素材料とし
て実用される。特にこの種の化合物超電導体の転移温度
が室温になる可能性もあり、従来の実用の範囲は広く、
本発明の工業的価値は高い。Effects of the Invention As described above, according to the present invention, Si or GaAs is used.
It can be integrated with other devices such as, and is used as an element material for various superconducting devices such as Josephson devices. In particular, the transition temperature of this type of compound superconductor may reach room temperature, and the conventional practical range is wide,
The industrial value of the present invention is high.
第１図は本発明の一実施例の超電導体の基体構成断面
図、第２図は本発明の超電導体の基本特性図、第３図は
本発明の集積化超電導装置の基体構成断面図である。 11……基体、12……３元化合物被膜。FIG. 1 is a sectional view of a base structure of a superconductor according to an embodiment of the present invention, FIG. 2 is a basic characteristic view of a superconductor of the present invention, and FIG. 3 is a sectional view of a base structure of an integrated superconducting device of the present invention. is there. 11 ... Substrate, 12 ... Ternary compound coating.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 足立 秀明 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 山崎 攻 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 東野 秀隆 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (56)参考文献 特開 昭64−13777（ＪＰ，Ａ) 特開 昭62−144072（ＪＰ，Ａ) Ｊｐｎ．Ｊ．Ａｐｐｌ．Ｐｈｙｓ．26 〔７〕（Ｊｕｌｙ 1987）Ｐ．Ｌ1248−Ｌ 1250 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Hideaki Adachi 1006, Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor, Yamasaki, 1006, Kadoma, Kadoma, Osaka Prefecture 72) Inventor Hidetaka Higashino 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP-A 64-13777 (JP, A) JP-A 62-144072 (JP, A) Jpn. J. Appl. Phys. 26 [7] (Jully 1987) P. L1248-L1250
Claims (2)
元素およびCuを含む高温超伝導酸化物の被膜を付着させ
るとともに前記基板上にSi半導体を集積化した事を特徴
とする集積化超伝導装置。ここに、ＡはSc,Yおよびラン
タン系列元素（原子番号57-71）のうち少なくとも一
種、ＢはIIa族元素のうちの少なくとも一種の元素を示
す。1. At least an A element and a B element on a CaF 2 single crystal substrate.
What is claimed is: 1. An integrated superconducting device, characterized in that a film of a high temperature superconducting oxide containing elements and Cu is deposited and a Si semiconductor is integrated on the substrate. Here, A represents at least one of Sc, Y and lanthanum series elements (atomic number 57-71), and B represents at least one of Group IIa elements.
元素、Ｂ元素およびCuを含む高温超伝導酸化物の被膜を
付着させるとともに前記基板上にGaAs半導体を集積化し
た事を特徴とする集積化超伝導装置。ここに、ＡはSc,Y
およびランタン系列元素（原子番号57-71）のうち少な
くとも一種、ＢはIIa族元素のうちの少なくとも一種の
元素を示し、ｘ＞０である。2. A (Ca 1-x Sr x ) F 2 single crystal substrate having at least A
An integrated superconducting device, characterized in that a film of a high temperature superconducting oxide containing an element, an element B and Cu is attached and a GaAs semiconductor is integrated on the substrate. Where A is Sc, Y
And at least one of the lanthanum series elements (atomic number 57-71), B represents at least one element of the IIa group elements, and x> 0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62189282A JPH0719922B2 (en) | 1987-07-29 | 1987-07-29 | Superconductor and integrated superconducting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62189282A JPH0719922B2 (en) | 1987-07-29 | 1987-07-29 | Superconductor and integrated superconducting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6433979A JPS6433979A (en) | 1989-02-03 |
| JPH0719922B2 true JPH0719922B2 (en) | 1995-03-06 |
Family
ID=16238711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62189282A Expired - Fee Related JPH0719922B2 (en) | 1987-07-29 | 1987-07-29 | Superconductor and integrated superconducting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0719922B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3851701T2 (en) * | 1988-06-03 | 1995-03-30 | Ibm | Process for the production of artificial high-temperature superconductors with a multilayer structure. |
| JPH0758686B2 (en) * | 1988-10-04 | 1995-06-21 | 東京大学長 | Heteroepitaxial growth method of two-dimensional materials on three-dimensional materials |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63308975A (en) * | 1987-06-11 | 1988-12-16 | Toshiba Corp | current control element |
| JPS6413777A (en) * | 1987-07-07 | 1989-01-18 | Sharp Kk | Josephson element |
-
1987
- 1987-07-29 JP JP62189282A patent/JPH0719922B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| Ｊｐｎ．Ｊ．Ａｐｐｌ．Ｐｈｙｓ．２６〔７〕（Ｊｕｌｙ１９８７）Ｐ．Ｌ１２４８−Ｌ１２５０ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6433979A (en) | 1989-02-03 |
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