JPH0720537B2 - Chemical vapor deposition exhaust gas treatment method - Google Patents
Chemical vapor deposition exhaust gas treatment methodInfo
- Publication number
- JPH0720537B2 JPH0720537B2 JP61116712A JP11671286A JPH0720537B2 JP H0720537 B2 JPH0720537 B2 JP H0720537B2 JP 61116712 A JP61116712 A JP 61116712A JP 11671286 A JP11671286 A JP 11671286A JP H0720537 B2 JPH0720537 B2 JP H0720537B2
- Authority
- JP
- Japan
- Prior art keywords
- exhaust gas
- vapor deposition
- chemical vapor
- treatment method
- gas treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Treating Waste Gases (AREA)
- Separation Of Gases By Adsorption (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は化学蒸着(Chemical Vapor Deposition:CVD)
処理に際して生ずる排ガスの処理方法に関し、更に詳し
くは排ガス中に含まれる揮発性フッ化物を除去する方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to chemical vapor deposition (CVD).
The present invention relates to a method for treating exhaust gas generated during treatment, and more particularly to a method for removing volatile fluoride contained in the exhaust gas.
CVDは切削工具、プレス型への超硬コーティング、高温
耐酸化被覆、宇宙開発用特殊複合材料、半導体など多く
の産業分野で利用されている。CVD is used in many industrial fields such as cutting tools, cemented carbide for press molds, high temperature oxidation resistant coatings, special composite materials for space development, and semiconductors.
このCVD法の原理は大気を遮断した系の中で、加熱した
基材の表面に金属化合物、水素及び場合によっては第三
成分からなる混合ガスを接触させ、気相化学反応を起こ
して基材表面に金属を析出させ、被覆を形成させる方法
である。この方法を用いることにより通常のメッキでは
得難いW,Mo,Re,Ti,Zr等の金属及び金属化合物のメッキ
が可能になり、上述した種々の用途開発が行われてきた
のである。The principle of this CVD method is to bring a mixed gas consisting of a metal compound, hydrogen and, in some cases, a third component into contact with the surface of a heated base material in a system in which the base material is heated to cause a gas-phase chemical reaction. In this method, a metal is deposited on the surface to form a coating. By using this method, it becomes possible to plate metals and metal compounds such as W, Mo, Re, Ti, and Zr, which are difficult to obtain by ordinary plating, and the various applications described above have been developed.
CVDには種々の金属化合物が用いられているが、揮発性
フッ化物を用いると比較的低い温度でのCVDが可能とな
ることから最近広く利用されてきている。このCVDにお
ける排ガスの処理には所謂湿式のアルカリ洗浄方式が採
用されているが、減圧下でCVDを行う場合には用いにく
く、また高精度を要求される場合には水分の逆拡散が問
題になる。Although various metal compounds are used for CVD, they have been widely used recently because the use of volatile fluorides enables CVD at relatively low temperatures. A so-called wet alkaline cleaning method is used to treat the exhaust gas in this CVD, but it is difficult to use when performing CVD under reduced pressure, and back diffusion of water becomes a problem when high accuracy is required. Become.
本発明の目的は、従来の湿式のアルカリ洗浄方式では適
用しにくい減圧下でのCVD及び高精度を用されるCVDに適
用し得る乾式の排ガス処理方法を提供することにある。It is an object of the present invention to provide a dry exhaust gas treatment method applicable to CVD under reduced pressure, which is difficult to apply by a conventional wet alkaline cleaning method, and CVD that requires high accuracy.
本発明は排ガスを深冷し、しかる後吸着処理をすること
によりフッ化物の除去をするものであり、まずCVD装置
からの排出ガスを液体窒素等を用いて−100〜−170℃に
冷却し、排出ガス中の揮発性フッ化物の殆どを凝縮又は
凝固させて除去し、凝縮しなかったフッ化物を吸着剤で
除去する方法である。尚、深冷するための冷媒として
は、液体窒素がその取り扱い易さ、冷却温度等から最も
好ましいが、特に液体窒素に限定されるものではない。The present invention is to cool the exhaust gas deeply, and then to remove the fluoride by performing an adsorption treatment.First, the exhaust gas from the CVD apparatus is cooled to -100 to -170 ° C using liquid nitrogen or the like. In this method, most of the volatile fluorides in the exhaust gas are condensed or solidified and removed, and the uncondensed fluorides are removed by an adsorbent. Liquid nitrogen is most preferable as the cooling medium for deep cooling because of its ease of handling and cooling temperature, but it is not limited to liquid nitrogen.
吸着剤はフッ化ナトリウム及びソーダ石灰、及び場合に
より活性アルミナを組み合わせて用いる。フッ化ナトリ
ウムは主としてフッ化水素を除去し、ソーダ石灰は他の
揮発性フッ化物を化学吸着により除去する。アルミナは
ソーダ石灰の粉末、水分等の吸着除去をすると共に逆拡
散により混入する水分も吸着する。The adsorbent used is a combination of sodium fluoride and soda lime, and optionally activated alumina. Sodium fluoride primarily removes hydrogen fluoride and soda lime removes other volatile fluorides by chemisorption. Alumina adsorbs and removes soda-lime powder and water, and also adsorbs water mixed in by back diffusion.
以下実施例により本発明を具体的に説明する。 The present invention will be specifically described below with reference to examples.
参考例 1 50vol%のHFを含むH2ガス5/分を、予め液体窒素で
約−150℃に冷却されたコールドトラップ装置に導入し
た。HFはその殆どが除去され、ここで排気されるガスの
HF濃度は0.07vol%であった。このガスをフッ化ナトリ
ウム粒が充填されている吸着塔を通すことによりHFの除
去を行う。吸着塔から排出されるHFガス濃度は0.5ppm以
下になった。Reference Example 1 H 2 gas 5 / min containing 50 vol% HF was introduced into a cold trap device that had been cooled to about −150 ° C. with liquid nitrogen in advance. Most of the HF is removed and the gas exhausted here is
The HF concentration was 0.07vol%. HF is removed by passing this gas through an adsorption tower filled with sodium fluoride particles. The HF gas concentration discharged from the adsorption tower became 0.5 ppm or less.
参考例 2 エゼクターを用いて系内圧力を約100torrにした。この
中に50vol%HFを含むH2ガスを700ml/分の速度で参考例
1のコールドトラップ及びフッ化ナトリウム粒の吸着塔
に通した。このとき吸着塔から排出されるHF濃度は約5p
pmであった。このガスをソーダライム充填塔を通すとHF
濃度は0.1ppm以下になった。Reference example 2 The pressure inside the system was set to about 100 torr using an ejector. H 2 gas containing 50 vol% HF therein was passed through the cold trap of Reference Example 1 and an adsorption tower of sodium fluoride particles at a rate of 700 ml / min. At this time, the HF concentration discharged from the adsorption tower is about 5 p
It was pm. When this gas is passed through a soda lime packed tower, HF
The concentration fell below 0.1 ppm.
参考例 3 参考例2と同様の条件に、WF6 10ml/分を混合し実験を
行った結果、WF6はコールドトラップでその殆どが除去
された。しかし、約100ppmのWF6がその排ガス中に含ま
れ、これはフッ化ナトリウム粒では取り除けなかった。
しかし、ソーダライムでは完全に除去され、この吸着塔
に通した後はWは検出されなかった。Reference Example 3 As a result of conducting an experiment by mixing 10 ml / min of WF 6 under the same conditions as in Reference Example 2, most of WF 6 was removed by a cold trap. However, about 100 ppm of WF 6 was contained in the exhaust gas, which could not be removed by sodium fluoride particles.
However, it was completely removed with soda lime, and W was not detected after passing through this adsorption tower.
実施例 1 HF 48vol%、WF62vol%及びH2 50vol%よりなる排ガス4
00/分(50torr)を予め液体N2で約−150℃に冷却し
てあるコールドトラップ装置に導入した。このコールド
トラップ装置ではHF及びWF6の大部分が除去されたが、
排ガス中にはHF3%及びWF660ppmが望まれていた。Example 1 Exhaust gas 4 consisting of HF 48 vol%, WF 6 2 vol% and H 2 50 vol% 4
00 / min (50 torr) was introduced into the cold trap device which had been previously cooled to about -150 ° C with liquid N 2 . Although most of HF and WF 6 were removed with this cold trap device,
HF 3% and WF 6 60ppm were desired in the exhaust gas.
この排ガスをフッ化ナトリウム粒充填塔、次いでソーダ
ライム充填塔(いずれも内径250mm、充填高さ500mm)に
通した結果、ソーダライム充填塔より出たガス中のHFは
0.1ppm以下となり、WF6は検出されなかった。As a result of passing this exhaust gas through a sodium fluoride particle packed tower and then a soda lime packed tower (both inner diameter 250 mm, packed height 500 mm), HF in the gas discharged from the soda lime packed tower was
It became 0.1 ppm or less, and WF 6 was not detected.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 C23C 16/44 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI technical display location C23C 16/44
Claims (2)
フッ化ナトリウム及びソーダ石灰で順次吸着処理してフ
ッ化物を除去することを特徴とする化学蒸着排ガスの処
理方法。1. A method for treating a chemical vapor deposition exhaust gas, which comprises chilling a chemical vapor deposition exhaust gas under reduced pressure, followed by adsorption treatment with sodium fluoride and soda lime to remove fluoride.
第1項記載の処理方法。2. The processing method according to claim 1, wherein deep cooling is performed using liquid nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61116712A JPH0720537B2 (en) | 1986-05-21 | 1986-05-21 | Chemical vapor deposition exhaust gas treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61116712A JPH0720537B2 (en) | 1986-05-21 | 1986-05-21 | Chemical vapor deposition exhaust gas treatment method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62273038A JPS62273038A (en) | 1987-11-27 |
| JPH0720537B2 true JPH0720537B2 (en) | 1995-03-08 |
Family
ID=14693945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61116712A Expired - Lifetime JPH0720537B2 (en) | 1986-05-21 | 1986-05-21 | Chemical vapor deposition exhaust gas treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0720537B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2774108B2 (en) * | 1988-08-24 | 1998-07-09 | 株式会社荏原製作所 | Exhaust gas abatement system |
| KR20230017157A (en) * | 2020-06-01 | 2023-02-03 | 이와타니 산교 가부시키가이샤 | Method for recovering platinum group metal, method for producing a film containing platinum group metal, and film forming apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50101298A (en) * | 1974-01-11 | 1975-08-11 | ||
| JPS6125618A (en) * | 1984-07-13 | 1986-02-04 | Hitachi Ltd | Particulate removal device |
-
1986
- 1986-05-21 JP JP61116712A patent/JPH0720537B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62273038A (en) | 1987-11-27 |
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