JPH07212166A - Amplitude and phase control circuit - Google Patents
Amplitude and phase control circuitInfo
- Publication number
- JPH07212166A JPH07212166A JP1222494A JP1222494A JPH07212166A JP H07212166 A JPH07212166 A JP H07212166A JP 1222494 A JP1222494 A JP 1222494A JP 1222494 A JP1222494 A JP 1222494A JP H07212166 A JPH07212166 A JP H07212166A
- Authority
- JP
- Japan
- Prior art keywords
- phase
- amplitude
- terminal
- amount
- control signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 230000010363 phase shift Effects 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
Landscapes
- Non-Reversible Transmitting Devices (AREA)
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、核物理関係で使用され
る線形加速器の大電力クライストロンの入力回路のごと
く、マイクロ波信号の信号強度を位相変化なしで調整し
たり、または信号強度の変化なしで位相を調整する必要
が発生した場合に用いられる振幅・位相制御回路に関す
る。BACKGROUND OF THE INVENTION The present invention, like the input circuit of a high power klystron of a linear accelerator used in nuclear physics, adjusts the signal strength of a microwave signal without changing the phase, or changes the signal strength. The present invention relates to an amplitude / phase control circuit that is used when it is necessary to adjust the phase without the need.
【0002】[0002]
【従来の技術】多段の大電力クライストロンでは、各段
の入力信号の振幅および位相を適宜調整する必要があ
り、従来は振幅と位相は相互に影響するため、一方を一
定に保ちながら、他の方のみを調整することは、煩雑な
手順を必要とした。2. Description of the Related Art In a multi-stage high-power klystron, it is necessary to appropriately adjust the amplitude and phase of the input signal of each stage. Conventionally, the amplitude and the phase affect each other, so one of them can be kept constant while the other is kept constant. Adjusting only one required a complicated procedure.
【0003】例えば、入力信号レベルを可変減衰器で調
整すると、それに伴って減衰器の移相量が変化するため
に、直列の可変移相器を調整して位相を元に戻さねばな
らないが、このことによって減衰量が再び変化するの
で、再度減衰器を調整する等、数回繰り返して調整を実
施しなければならない。また、同じことが位相の調整に
際しても必要なため、面倒で時間の掛かる操作を要し
た。For example, when the input signal level is adjusted by the variable attenuator, the phase shift amount of the attenuator changes accordingly. Therefore, it is necessary to adjust the series variable phase shifter to restore the phase. This causes the amount of attenuation to change again, so the adjustment must be repeated several times, such as adjusting the attenuator again. In addition, the same thing is necessary when adjusting the phase, so a laborious and time-consuming operation is required.
【0004】[0004]
【発明が解決しようとする課題】本発明は上記のような
背景のもとになされたものであり、振幅変化量が極小な
性能の可変移相器と、移相量が極小な性能の可変減衰器
とを使用し、かつ両者の単一信号によって、同時に移相
器および減衰器を適宜調整するようにして、応答速度を
迅速にする振幅・位相制御回路を提供することを目的と
する。SUMMARY OF THE INVENTION The present invention has been made based on the above-mentioned background, and a variable phase shifter having a performance with a minimal amount of amplitude change and a variable phase shifter having a performance with a minimal amount of phase shift. It is an object of the present invention to provide an amplitude / phase control circuit which uses an attenuator and which appropriately adjusts the phase shifter and the attenuator at the same time by a single signal of both of them to speed up the response speed.
【0005】[0005]
【課題を解決するための手段】すなわち本発明は、それ
ぞれ3dBハイブリッド回路と半導体ダイオードとを組
み合わせた可変移相器(以下「半導体可変移相器」とい
う)および可変減衰器(以下「半導体可変減衰器」とい
う)とを、直列に接続して入力信号を処理する振幅・位
相制御回路であって、その半導体可変移相器および半導
体可変減衰器が、外部からの振幅制御信号または移相制
御信号によって、入力信号の振幅または移相量を調整す
るとともに、予めROMに内蔵させた制御回路群によっ
て、入力信号の振幅を調整するときは移相量を、移相量
を調整するときは振幅を、それぞれほぼ元の値に保つご
とく出力する固体回路で構成した振幅・位相制御回路で
ある。That is, the present invention is directed to a variable phase shifter (hereinafter referred to as "semiconductor variable phase shifter") and a variable attenuator (hereinafter referred to as "semiconductor variable attenuation") each combining a 3 dB hybrid circuit and a semiconductor diode. Is referred to as "device"), and the semiconductor variable phase shifter and semiconductor variable attenuator are external amplitude control signals or phase shift control signals. Adjust the amplitude or phase shift amount of the input signal by the control circuit group built in the ROM in advance, and adjust the phase shift amount when adjusting the amplitude of the input signal and the amplitude when adjusting the phase shift amount. , An amplitude / phase control circuit composed of a solid-state circuit that outputs the respective values while keeping them at their original values.
【0006】[0006]
【作用】本発明においては、ROM内に、半導体可変減
衰器の減衰量変化に対する移相量変化のデータと、半導
体可変移相器の移相量変化に対する減衰変化量を予め記
憶させておく。すなわち、入力信号の振幅を変化させる
場合には、外部からの振幅制御信号によって半導体可変
減衰器の減衰量を調整すると共に、これに伴う半導体可
変減衰器の移相量変化を補正するように半導体可変移相
器の移相量を変化させ、同時にこの変化に伴う半導体可
変移相器の減衰量変化を、半導体可変減衰器で補正す
る。また、外部からの移相制御信号到来によって半導体
可変移相器の移相量を変化させた場合も、同時にこれに
伴う減衰量変化を半導体可変減衰器によって補正させ
る。このようにして、マイクロ波の入力信号の振幅およ
び位相を自動的に調整することにより、応答の迅速化を
図ることが可能となる。According to the present invention, the data of the amount of phase shift with respect to the change of the amount of change in the semiconductor variable attenuator and the amount of change in the change with respect to the change of the amount of phase shift of the semiconductor variable phase shifter are stored in advance in the ROM. That is, when the amplitude of the input signal is changed, the semiconductor variable attenuator is adjusted by the amplitude control signal from the outside, and the semiconductor phase shift amount of the semiconductor variable attenuator is changed accordingly. The phase shift amount of the variable phase shifter is changed, and at the same time, the change in the attenuation amount of the semiconductor variable phase shifter caused by this change is corrected by the semiconductor variable attenuator. Further, even when the phase shift amount of the semiconductor variable phase shifter is changed by the arrival of the phase shift control signal from the outside, the semiconductor variable attenuator simultaneously corrects the change in the attenuation amount due to the change. In this way, by automatically adjusting the amplitude and phase of the microwave input signal, it is possible to speed up the response.
【0007】[0007]
【実施例】以下、本発明による振幅・位相制御回路を、
実施例に基づいて具体的に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an amplitude / phase control circuit according to the present invention will be described.
A specific description will be given based on examples.
【0008】図1は本発明による振幅・位相制御回路の
構成の1例を示す説明図である。図1において、マイク
ロ波信号は端子1から入り、半導体可変移相器2および
3を通過して、半導体可変減衰器4を通り、出力端子5
から外部に出て行く。一方アナログ量の振幅制御信号と
移相制御信号は、端子6と7から印加され、アナログ/
デジタル(A/D)変換器8および9によってデジタル
量に変換され、演算回路10に導かれる。FIG. 1 is an explanatory diagram showing an example of the configuration of an amplitude / phase control circuit according to the present invention. In FIG. 1, the microwave signal enters from the terminal 1, passes through the semiconductor variable phase shifters 2 and 3, passes through the semiconductor variable attenuator 4, and outputs at the output terminal 5.
Go out from. On the other hand, analog amplitude control signals and phase shift control signals are applied from terminals 6 and 7 to
It is converted into a digital amount by the digital (A / D) converters 8 and 9 and guided to the arithmetic circuit 10.
【0009】データROM回路12には、2個の半導体
可変移相器2および3の制御電圧に対する移相量の変化
とそのときの減衰量の変動、および半導体可変減衰器4
の制御電圧に対する減衰量の変化とこれに対する移相量
の変動をデータとして予め収納させておく。The data ROM circuit 12 includes a change in the amount of phase shift with respect to the control voltage of the two semiconductor variable phase shifters 2 and 3, a change in the attenuation amount at that time, and a semiconductor variable attenuator 4.
The change in the amount of attenuation with respect to the control voltage and the change in the amount of phase shift corresponding thereto are stored in advance as data.
【0010】端子6から振幅制御信号がA/D変換器8
に加えられると、信号はデジタル量に変換されて、演算
回路10に導かれ、データROM回路12から相当する
制御信号電圧と位相の変動を補正するためのデジタル量
が与えられるので、デジタル/アナログ(D/A)変換
器11a、11b、11cでアナログ量に変換され、そ
れぞれ半導体可変移相器と半導体可変減衰器を変化させ
て、希望の振幅と位相の電圧が端子5から出力される。
移相量の調整も端子7から入力する位相制御電圧によっ
て同様に行われる。An amplitude control signal is applied from the terminal 6 to the A / D converter 8
, The signal is converted into a digital amount, guided to the arithmetic circuit 10, and given from the data ROM circuit 12 a corresponding control signal voltage and a digital amount for correcting the fluctuation of the phase. The (D / A) converters 11a, 11b, 11c are converted into analog quantities, and the semiconductor variable phase shifter and the semiconductor variable attenuator are changed, and the voltage of the desired amplitude and phase is output from the terminal 5.
The adjustment of the phase shift amount is similarly performed by the phase control voltage input from the terminal 7.
【0011】実施例 本発明の半導体可変移相器および半導体可変減衰器とし
ては、図2および図3に1例を示した回路を使用した。
両回路において、13a、13bはマイクロ波入力端
子、14a、14bはその出力端子、15a、15b、
15c、15dは直流阻止コンデンサ、16a、16b
は3dBハイブリッド回路、22a、22bは高周波チ
ョークコイル、23a、23bはバイパスコンデンサ、
21a、21bは制御信号入力端子である。Example As the semiconductor variable phase shifter and the semiconductor variable attenuator of the present invention, the circuits shown as examples in FIGS. 2 and 3 were used.
In both circuits, 13a and 13b are microwave input terminals, 14a and 14b are their output terminals, 15a and 15b,
15c and 15d are DC blocking capacitors, 16a and 16b
Is a 3 dB hybrid circuit, 22a and 22b are high frequency choke coils, 23a and 23b are bypass capacitors,
21a and 21b are control signal input terminals.
【0012】図2の半導体可変移相器において、端子1
3aからの入力信号は、3dBハイブリッド回路16a
によって2分され、17a、17bの可変容量ダイオー
ド(またはPINダイオード)によって位相が変化し、
λ/4長の線路先端で可変コンデンサ18a、18bで
調整され、再び3dBハイブリッド回路16aを通っ
て、出力端子14aから位相の変化した信号が出て行
く。移相制御信号電圧は、端子21aからダイオード1
7a、17bに印加され、半導体可変移相器内の移相量
を最大+/−90度変化させることができる。In the semiconductor variable phase shifter shown in FIG.
The input signal from 3a is a 3 dB hybrid circuit 16a.
Is divided into two, and the phase is changed by the variable capacitance diode (or PIN diode) of 17a and 17b,
The signal is adjusted by the variable capacitors 18a and 18b at the end of the .lamda. / 4 length line, passes through the 3 dB hybrid circuit 16a again, and a signal with a changed phase is output from the output terminal 14a. The phase shift control signal voltage is applied to the diode 1 from the terminal 21a.
7a and 17b, the amount of phase shift in the semiconductor variable phase shifter can be changed up to +/− 90 degrees.
【0013】図3は本発明に使用する半導体可変減衰器
の1例を示す図である。図3において端子13bからの
入力信号は、図2の場合と同様に3dBハイブリッド回
路16bによって2分され、PINダイオード19a、
19bと抵抗20a、20bによって反射され、再び3
dBハイブリッド回路16bを通って、端子21bから
の振幅制御信号電圧によって制御された振幅の変化した
信号が出力端子14bから出て行く。この種可変減衰器
で0乃至40dBの調整ができる。FIG. 3 is a diagram showing an example of a semiconductor variable attenuator used in the present invention. In FIG. 3, the input signal from the terminal 13b is divided into two by the 3 dB hybrid circuit 16b as in the case of FIG. 2, and the PIN diode 19a,
It is reflected by 19b and resistors 20a and 20b, and again 3
A signal with a changed amplitude controlled by the amplitude control signal voltage from the terminal 21b goes out from the output terminal 14b through the dB hybrid circuit 16b. This kind of variable attenuator can adjust 0 to 40 dB.
【0014】本発明では、移相変化を+/−180度と
するため、2個の半導体可変移相器と、1個の半導体可
変減衰器を直列に接続して、図1のように構成した。こ
の半導体可変減衰器の減衰量変化に伴う位相変化は最大
15度であり、また半導体可変移相器の移相変化による
減衰量変化は最大3dBであった。In the present invention, in order to make the phase shift change +/- 180 degrees, two semiconductor variable phase shifters and one semiconductor variable attenuator are connected in series to construct as shown in FIG. did. The maximum change in the phase of the semiconductor variable attenuator due to the change in the attenuation was 15 degrees, and the maximum change in the attenuation due to the change in the phase shift of the semiconductor variable phase shifter was 3 dB.
【0015】本発明では、上記半導体可変減衰器の減衰
特性およびこの減衰量変化に伴う位相変化と、2個の半
導体可変移相器の移相特性およびこの移相量変化に伴う
減衰量変化の補正テーブルの6枚をROM内に置き、外
部からの制御信号によって、補正値をマトリックス演算
し、出力信号の振幅と位相を同時に調整する。In the present invention, the attenuation characteristic of the semiconductor variable attenuator and the phase change due to the change in the attenuation amount, the phase shift characteristic of the two semiconductor variable phase shifters and the change in the attenuation amount due to the change in the phase shift amount are described. Six correction tables are placed in the ROM, and the correction values are matrix-calculated by a control signal from the outside to simultaneously adjust the amplitude and phase of the output signal.
【0016】[0016]
【発明の効果】以上説明したように本発明の振幅・位相
制御回路は上記の構成であるから、図1の回路では、
2.9 GHzのマイクロ波信号に対して、位相を0乃至36
0度変化させたときの振幅変化が、±0.5 %、また振幅
を10乃至100%変化させた場合の位相変化は±1度
以内に抑えられた。本発明では、半導体可変減衰器と半
導体可変移相器を含む全回路を電子回路で構成したの
で、応答速度が、10 mS 以下となり迅速に応答するこ
とができた。As described above, since the amplitude / phase control circuit of the present invention has the above-mentioned configuration, the circuit of FIG.
0 to 36 phase for 2.9 GHz microwave signal
The amplitude change when the amplitude was changed by 0 degree was ± 0.5%, and the phase change when the amplitude was changed by 10 to 100% was suppressed within ± 1 degree. In the present invention, since the entire circuit including the semiconductor variable attenuator and the semiconductor variable phase shifter is composed of electronic circuits, the response speed is 10 mS or less, and a quick response is possible.
図1 本発明の概略の構成を示す説明図。 図2 本発明に使用する半導体可変移相器の回路の1例
を示す図。 図3 本発明に使用する半導体可変減衰器の回路に1例
を示す図。1 is an explanatory diagram showing a schematic configuration of the present invention. 2 is a diagram showing an example of a circuit of the semiconductor variable phase shifter used in the present invention. 3 is a diagram showing an example of a circuit of a semiconductor variable attenuator used in the present invention.
1 マイクロ波主信号入力端子 2、3 半導体可変移相器 4 半導体可変減衰器 5 マイクロ波主信号出力端子 6 振幅制御信号入力端子 7 移相制御信号入力端子 8、9 アナログ/デジタル変換器 10 演算回路 11a、11b、11c デジタル/アナログ変換器 12 データROM回路 13a、13b マイクロ波信号入力端子 14a、14b マイクロ波信号出力端子 15a、15b、15c、15d 直流阻止コンデンサ 16a、16b 3dBハイブリッド回路 17a、17b 可変容量ダイオード(またはPINダ
イオード) 18a、18b 可変コンデンサ 19a、19b PINダイオード 20a、20b 抵抗器 21a、21b 制御電圧入力端子 22a、22b 高周波チョークコイル 23a、23b バイパスコンデンサ1 microwave main signal input terminal 2, 3 semiconductor variable phase shifter 4 semiconductor variable attenuator 5 microwave main signal output terminal 6 amplitude control signal input terminal 7 phase shift control signal input terminal 8, 9 analog / digital converter 10 operation Circuits 11a, 11b, 11c Digital / analog converter 12 Data ROM circuits 13a, 13b Microwave signal input terminals 14a, 14b Microwave signal output terminals 15a, 15b, 15c, 15d DC blocking capacitors 16a, 16b 3dB hybrid circuits 17a, 17b Variable capacitance diode (or PIN diode) 18a, 18b Variable capacitor 19a, 19b PIN diode 20a, 20b Resistor 21a, 21b Control voltage input terminal 22a, 22b High frequency choke coil 23a, 23b Bypass capacitor
Claims (1)
ダイオードとを組み合わせた可変移相器と可変減衰器を
直列に接続して入力信号を処理する振幅・位相制御回路
であって、該可変移相器および該可変減衰器が、外部か
らの振幅制御信号または移相制御信号によって、入力信
号の振幅または移相量を調整するとともに、予めROM
に内蔵させた制御回路群によって、該入力信号の振幅を
調整するときは移相量を、移相量を調整するときは振幅
を、それぞれほぼ元の値に保つごとく出力する固体回路
で構成した振幅・位相制御回路。1. An amplitude / phase control circuit for processing an input signal by connecting in series a variable phase shifter and a variable attenuator, each of which is a combination of a 3 dB hybrid circuit and a semiconductor diode. The variable attenuator adjusts the amplitude or the amount of phase shift of the input signal by an amplitude control signal or a phase shift control signal from the outside, and stores the ROM in advance.
A control circuit group built in the output circuit is configured by a solid-state circuit that outputs the phase shift amount when adjusting the amplitude of the input signal and the amplitude when adjusting the phase shift amount so that the amplitudes are maintained at almost original values. Amplitude / phase control circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1222494A JPH07212166A (en) | 1994-01-10 | 1994-01-10 | Amplitude and phase control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1222494A JPH07212166A (en) | 1994-01-10 | 1994-01-10 | Amplitude and phase control circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07212166A true JPH07212166A (en) | 1995-08-11 |
Family
ID=11799412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1222494A Pending JPH07212166A (en) | 1994-01-10 | 1994-01-10 | Amplitude and phase control circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07212166A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6177410A (en) * | 1984-09-25 | 1986-04-21 | Mitsubishi Electric Corp | Microwave phase shifter |
| JPS63176050A (en) * | 1987-01-17 | 1988-07-20 | Mitsubishi Electric Corp | Orthogonal modulator |
| JPH0423524A (en) * | 1990-05-18 | 1992-01-27 | Fujitsu Ltd | Automatic gain control amplifier |
| JPH05235671A (en) * | 1992-02-21 | 1993-09-10 | Kokusai Electric Co Ltd | Temperature compensation circuit for distortion compensating multifrequency common amplifier |
-
1994
- 1994-01-10 JP JP1222494A patent/JPH07212166A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6177410A (en) * | 1984-09-25 | 1986-04-21 | Mitsubishi Electric Corp | Microwave phase shifter |
| JPS63176050A (en) * | 1987-01-17 | 1988-07-20 | Mitsubishi Electric Corp | Orthogonal modulator |
| JPH0423524A (en) * | 1990-05-18 | 1992-01-27 | Fujitsu Ltd | Automatic gain control amplifier |
| JPH05235671A (en) * | 1992-02-21 | 1993-09-10 | Kokusai Electric Co Ltd | Temperature compensation circuit for distortion compensating multifrequency common amplifier |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19971125 |