JPH0721428B2 - Thermal conversion type optical sensor - Google Patents
Thermal conversion type optical sensorInfo
- Publication number
- JPH0721428B2 JPH0721428B2 JP60242467A JP24246785A JPH0721428B2 JP H0721428 B2 JPH0721428 B2 JP H0721428B2 JP 60242467 A JP60242467 A JP 60242467A JP 24246785 A JP24246785 A JP 24246785A JP H0721428 B2 JPH0721428 B2 JP H0721428B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- area
- type optical
- optical sensor
- conversion type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
【発明の詳細な説明】 イ.産業上の利用分野 本発明は紫外,可視,赤外の光を吸収して熱に変換して
温度変化として光を検出する焦電型の光検出器に関す
る。Detailed Description of the Invention a. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pyroelectric photodetector that absorbs ultraviolet, visible, and infrared light, converts it into heat, and detects the light as a temperature change.
ロ.従来の技術 熱変換型光センサは波長特性が平坦であると云う特徴が
ある。また赤外域では長波長まで感度を有する適当な光
電変換素子が知られていないので、この型のセンサが広
く用いられている。熱変換型光センサのうち、焦電型セ
ンサは同一の光パワーを検出する場合、その光をできる
だけ集光して、なるべく面積の小さい素子で受光する方
が感度が高い。即ち或面積の素子で受光している場合、
その素子を半分に分割しても出力電圧は変わらない。そ
こで同量の光を半分の面積の素子に集中すれば、もとの
面積の素子に2倍の光量を照射したのと同じになるから
出力電圧が高くなる。つまり焦電型のセンサの場合、照
射光の面積密度を高める程感度,S/N比が向上する。B. 2. Description of the Related Art A heat conversion type optical sensor has a characteristic that wavelength characteristics are flat. Further, since a suitable photoelectric conversion element having sensitivity up to a long wavelength in the infrared region is not known, this type of sensor is widely used. When detecting the same optical power, the pyroelectric type sensor among the thermal conversion type optical sensors has a higher sensitivity when the light is condensed as much as possible and is received by the element having the smallest possible area. That is, when receiving light with an element of a certain area,
Even if the element is divided in half, the output voltage does not change. Therefore, if the same amount of light is concentrated on the element having the half area, the output voltage becomes high because it becomes the same as when the element having the original area is irradiated with the double amount of light. That is, in the case of a pyroelectric sensor, the sensitivity and S / N ratio are improved as the area density of irradiation light is increased.
しかし光源の大きさ,集光光学系の都合等で任意に小さ
い面積に集光するは困難であり、与えられた条件で集光
された光の集光面積に合わせた素子を使うと云うのが現
状である。However, it is difficult to collect light in an arbitrarily small area due to the size of the light source and the convenience of the light collection optical system, and it is said that an element matching the light collection area of the light collected under the given conditions is used. Is the current situation.
ハ.発明が解決しようとする問題点 熱変換型光センサでは応答速度を高めるため熱容量は極
力小さい方がよい。また感度を上げるには焦電型の場
合、同じエネルギー入力に対して温度上昇が大きいこと
が必要で、このためには熱の発散の少ないことが必要で
あり、このため光を小さな面積に集中する必要があっ
た。これらの要求から焦電型センサは小型であることが
要求されるが光学系の方の都合で、光を任意に小さい面
積に集光することはできない。そこで本発明は光の集中
面積よりも小さい素子を用いて、しかも素子の面積から
はみ出した光をも有効利用して感度の向上を計ろうとす
るものである。C. Problems to be Solved by the Invention In the heat conversion type optical sensor, the heat capacity is preferably as small as possible in order to increase the response speed. In addition, in order to increase the sensitivity, in the case of the pyroelectric type, it is necessary that the temperature rise is large for the same energy input, and this requires a small amount of heat dissipation, so the light is concentrated in a small area. Had to do. From these requirements, the pyroelectric sensor is required to be small, but it is not possible to focus light on an arbitrarily small area because of the convenience of the optical system. Therefore, the present invention intends to improve the sensitivity by using an element smaller than the light concentrating area and by effectively utilizing the light protruding from the area of the element.
ニ.問題点解決のための手段 熱伝導率が低く熱容量の小さな基板上に光の吸収領域を
形成し、その中に焦電検出素子を配置した。D. Means for Solving Problems A light absorption region was formed on a substrate having a low heat conductivity and a small heat capacity, and a pyroelectric detection element was arranged in the light absorption region.
ホ.作 用 今光の吸収領域(黒化した面積)全面に光が入射してい
るとする。そうすると光吸収領域の温度は上昇してい
る。こゝで焦電素子だけ残して光吸収領域を取り去った
とすると、焦電素子は周囲の温度上昇していた部分がな
くなり、それより低温の環境温度に直接包囲されること
になり、光吸収領域があったときよりも温度が下がる。
即ち光吸収領域があることによって焦電素子の放熱が抑
えられ、焦電素子単独あるよりも温度が高くなってい
る。つまり感度が向上する。これは焦電素子の周囲を通
過して従来は無駄になっていた光で保温帯を形成して焦
電素子の放熱を減らし感度を向上させているのである。
光吸収領域は面積だけがあればよく厚さは不要なので基
板は構造的に可能な範囲で可能な限り薄くできるから、
熱伝導率も熱容量も共に小さくすることができ、応答速
度の低下は来さない。E. Work It is assumed that light is now incident on the entire light absorption area (blackened area). Then, the temperature of the light absorption region is rising. If the light absorption area is removed by leaving only the pyroelectric element here, the pyroelectric element will not have a portion where the ambient temperature has risen and will be directly surrounded by a lower ambient temperature. The temperature will be lower than when there was.
That is, the heat absorption of the pyroelectric element is suppressed by the presence of the light absorption region, and the temperature is higher than that of the pyroelectric element alone. That is, the sensitivity is improved. This is because the heat insulation zone is formed by the light which has passed through the periphery of the pyroelectric element and wasted in the past, thereby reducing the heat radiation of the pyroelectric element and improving the sensitivity.
Since the light absorption region need only have an area and the thickness is not necessary, the substrate can be made as thin as possible within the structurally possible range.
Both the thermal conductivity and the heat capacity can be reduced, and the response speed does not decrease.
ヘ.実施例 図は本発明の一実施例を示す。F. Embodiment FIG. Shows an embodiment of the present invention.
第1図において、1は四隅に柱2を立てたガラス台で、
この柱2によって四隅を支えてマイラフィルム3が張設
されている。マイラフィルム3は2mm角の正方形で厚さ
は9μmである。このマイラフィルムの中央には1.4mm
角で白金電極4がスパッタリングにより形成されてい
る。この電極の表面には電解法によって白金黒5が形成
されており光吸収領域をなしている。この白金電極の上
に焦電素子として0.05mm角のLiTaO3単結晶(Z板)の両
面に白金電極膜をスパッタした板6が導電性接着剤7に
よって取付けられ、全体の構成は上から見ると第2図の
ようになっている。Z板6の上面の白金電極は吸収領域
と同様に白金黒がつけてある。リード線9はZ板6の上
面の白金電極と光吸収領域を構成している白金電極4と
から引き出される。In FIG. 1, reference numeral 1 is a glass stand in which pillars 2 are set up at four corners,
Mylar films 3 are stretched by supporting the four corners by the columns 2. The mylar film 3 is a 2 mm square and has a thickness of 9 μm. 1.4mm in the center of this mylar film
Platinum electrodes 4 are formed at the corners by sputtering. Platinum black 5 is formed on the surface of this electrode by an electrolytic method to form a light absorption region. As a pyroelectric element, a 0.05 mm square LiTaO 3 single crystal (Z plate) was sputtered with platinum electrode films on both sides of this platinum electrode, and plates 6 were attached by a conductive adhesive 7. The whole structure was viewed from above. And it is as shown in FIG. The platinum electrode on the upper surface of the Z plate 6 is provided with platinum black similarly to the absorption region. The lead wire 9 is led out from the platinum electrode on the upper surface of the Z plate 6 and the platinum electrode 4 forming the light absorption region.
ト.効 果 本発明によればもともと安価で小さな焦電素子を合成樹
脂フィルム基板上に設置したものであるから安価であ
り、合成樹脂フィルム基板も光吸収領域になっているの
で、光の集光領域が焦電素子からはみ出している場合で
も、同素子の周囲の基板部分が昇温して素子を保温する
ので、合成樹脂フィルム基板が低熱伝導率で薄いことと
相まって焦電素子の熱損失が小さくなり、同じ焦電素子
面積で光吸収領域を持たない場合より感度が向上し、基
板部分もフィルムであり、焦電素子自身も小さいから熱
容量が小さくて応答性も良く、対環境性の低い高感度材
料(例えばDLATGS等)を無視して使わなくても、充分高
感度,高S/N比の測定が可能となる。G. Effect According to the present invention, since a small pyroelectric element is originally installed on a synthetic resin film substrate at a low cost, the cost is low, and the synthetic resin film substrate also serves as a light absorbing region. Even when the element sticks out from the pyroelectric element, the temperature of the substrate surrounding the element rises to keep the element warm, so the heat loss of the pyroelectric element is small in combination with the thin synthetic resin film substrate with low thermal conductivity. The sensitivity is improved compared to the case where the light absorption area is not provided in the same pyroelectric element area, the substrate part is also a film, and the pyroelectric element itself is small, so the heat capacity is small and the response is good, and the environment resistance is low. It is possible to measure with sufficiently high sensitivity and high S / N ratio without ignoring sensitive materials (such as DLATGS).
第1図は本発明の一実施例の側面図、第2図は同じく平
面図である。FIG. 1 is a side view of an embodiment of the present invention, and FIG. 2 is a plan view of the same.
Claims (1)
面に形成された光吸収領域と、この光吸収領域の中央に
設置された焦電素子とよりなる熱変換型光センサ。1. A heat conversion type optical sensor comprising a substrate made of a synthetic resin film, a light absorbing region formed on the upper surface of the substrate, and a pyroelectric element disposed in the center of the light absorbing region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60242467A JPH0721428B2 (en) | 1985-10-28 | 1985-10-28 | Thermal conversion type optical sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60242467A JPH0721428B2 (en) | 1985-10-28 | 1985-10-28 | Thermal conversion type optical sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62100619A JPS62100619A (en) | 1987-05-11 |
| JPH0721428B2 true JPH0721428B2 (en) | 1995-03-08 |
Family
ID=17089513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60242467A Expired - Lifetime JPH0721428B2 (en) | 1985-10-28 | 1985-10-28 | Thermal conversion type optical sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0721428B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0682073B2 (en) * | 1988-08-30 | 1994-10-19 | 株式会社村田製作所 | Pyroelectric infrared sensor |
| JP2732317B2 (en) * | 1990-08-13 | 1998-03-30 | 享士郎 関 | Optical sensor and illuminance change detection method |
| JP5989296B2 (en) * | 2010-04-28 | 2016-09-07 | ソニー株式会社 | Infrared imaging device |
-
1985
- 1985-10-28 JP JP60242467A patent/JPH0721428B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62100619A (en) | 1987-05-11 |
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