JPH0721624B2 - Reticle for semiconductor integrated circuit - Google Patents
Reticle for semiconductor integrated circuitInfo
- Publication number
- JPH0721624B2 JPH0721624B2 JP28270788A JP28270788A JPH0721624B2 JP H0721624 B2 JPH0721624 B2 JP H0721624B2 JP 28270788 A JP28270788 A JP 28270788A JP 28270788 A JP28270788 A JP 28270788A JP H0721624 B2 JPH0721624 B2 JP H0721624B2
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- reticle
- scribe line
- circuit pattern
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路用レチクルに関し、特に集積回
路パターン周辺に存在する余白部分に関する。Description: TECHNICAL FIELD The present invention relates to a reticle for semiconductor integrated circuits, and particularly to a blank portion existing around an integrated circuit pattern.
従来、半導体集積回路用レチクルの回路パターン周辺部
に存在する半導体基板切断余白(以下スクライブ線と呼
ぶ)は、主に次に示すような手法がとられていた。以下
従来技術について図面を用いて説明する。Conventionally, the semiconductor substrate cutting margin (hereinafter referred to as a scribe line) existing in the peripheral portion of the circuit pattern of the reticle for semiconductor integrated circuit has been mainly taken by the following method. The related art will be described below with reference to the drawings.
第3図は、半導体集積回路用レチクルの1チップを示し
たものである。ガラス板の中心301部附近は集積回路用
パターンが描かれた領域302とその周辺にスクライブ領
域303が存在する。このスクライブ線幅は1/5縮小投影露
光用レチクルの場合、通常250ミクロン程度である。こ
のレチクルを用いて縮小投影露光機で露光する場合、く
り返し露光の範囲をスクライブ線の左端304が右端305
に、また上端306が下端307に重なるようにくり返し露光
を行なう。このようにして露光された半導体基板上の配
置は第4図のようになる。今、第3図においてスクライ
ブ線幅が250ミクロンとすると、半導体基板上では1/5に
縮小されているため、50ミクロンとなり、それが互いに
隣り合っているため、結局、半導体基板上では100ミク
ロンのスクライブ線となる。FIG. 3 shows one chip of a reticle for a semiconductor integrated circuit. In the vicinity of the center 301 of the glass plate, there are a region 302 in which a pattern for an integrated circuit is drawn and a scribe region 303 around it. This scribe line width is usually about 250 microns in the case of a 1/5 reduction projection exposure reticle. When exposure is performed by a reduction projection exposure apparatus using this reticle, the left end 304 and the right end 305 of the scribe line cover the range of repeated exposure.
And repeated exposure so that the upper end 306 overlaps the lower end 307. The arrangement on the semiconductor substrate thus exposed is as shown in FIG. Now, assuming that the scribe line width in FIG. 3 is 250 microns, it is reduced to 1/5 on the semiconductor substrate, resulting in 50 microns, and since they are adjacent to each other, it is 100 microns on the semiconductor substrate. It becomes the scribe line.
次に第5図に示すような方法も存在する。第4図と同様
にガラス板の中心401部附近は回路パターン領域402で、
その周辺にスクライブ領域403が存在する。この場合は
スクライブ線幅が500ミクロンであり、くり返し露光は
パターン領域の左端404と右端405が、また上端406と下
端407が重なるように露光する。その結果、半導体基板
上での配置は第4図に示すようになる。従って、第3図
および第5図の例は結果的に同一となる。Next, there is also a method as shown in FIG. Similar to FIG. 4, the circuit pattern area 402 is near the center 401 of the glass plate.
A scribe area 403 exists around it. In this case, the scribe line width is 500 μm, and the repeated exposure is performed so that the left edge 404 and the right edge 405 of the pattern area and the upper edge 406 and the lower edge 407 of the pattern area overlap. As a result, the arrangement on the semiconductor substrate is as shown in FIG. Therefore, the examples of FIGS. 3 and 5 result in the same.
上述した従来技術は、以下に述べたような致命的な欠陥
がある。まず、第3図に示した例では、スクライブ線が
半導体基板上では幅100ミクロンであるが、実質的にそ
の半分であるため、スクライブ線の有効活用が制限され
ることになる。すなわち、回路動作としては不要だが、
必要不可欠なパターン、例えば重ね合わせマーク重ね合
わせ検査用マーク,検査用素子などは、スクライブ線に
入れることが一般的に行なわれており、従って、これら
のパターンをスクライブ線の半分に入れなくてはならな
い。仮にスクライブ線全幅を使用しようとしても、左右
または上下でのくり返し誤差により、パターンが完全に
接続されてない場合があり、使用できない。The above-mentioned conventional technique has a fatal defect as described below. First, in the example shown in FIG. 3, the scribe line has a width of 100 μm on the semiconductor substrate, but since the width is substantially half that, effective use of the scribe line is limited. In other words, it is unnecessary for circuit operation,
Indispensable patterns, such as overlay marks, overlay inspection marks, inspection elements, etc., are generally placed on the scribe lines, and therefore these patterns must be placed on half of the scribe lines. I won't. Even if it is attempted to use the full width of the scribe line, the pattern may not be completely connected due to the repeated error on the left and right sides or the top and bottom sides, and it cannot be used.
他方第5図に示した例では、スクライブ線全幅の使用が
可能だが、半導体基板上で二重露光されるため、一方に
検査用パターンを入れた場合、その位置に対応した他方
のスクライブ線が露光されないように遮蔽しておかなけ
ればならない。いづれにしてもレチクルパターン配置設
計に大きな負担となり、ミス発生防止のためのチェック
機能,体制を確立するなど多大な労力を必要とする。ま
たミスの発生は皆無でははく、その場合には、開発研究
の遅れ、製品出荷の遅れなどその損失は計り知れない。On the other hand, in the example shown in FIG. 5, the full width of the scribe line can be used, but since double exposure is performed on the semiconductor substrate, when the inspection pattern is put in one side, the other scribe line corresponding to the position is It must be shielded from exposure. In any case, the reticle pattern layout design becomes a heavy burden, and a great deal of labor is required to establish a check function and system to prevent errors. Moreover, the occurrence of mistakes is not inevitable, and in that case, the loss due to delay in development and research, delay in product shipment, etc. is immeasurable.
本発明の半導体集積回路用レチクルは集積回路パターン
とその周辺に存在する半導体基板を切断するための余白
部分で構成され、この余白部分が集積回路パターンの周
辺2方向のみに存在し、しかも、その2つの余日部分が
互いに隣接した2方向であることによって構成される。The reticle for semiconductor integrated circuit of the present invention is composed of an integrated circuit pattern and a blank portion for cutting the semiconductor substrate existing around the integrated circuit pattern. The blank portion exists only in two directions around the integrated circuit pattern, and It is configured by the two extra days being in two directions adjacent to each other.
従来の半導体集積回路用レチクルに対し、本発明は遮光
するなどの特別なことをせずに、スクライブ線全幅を有
効に使用できるよう、スクライブ線を回路パターンの隣
り合う2方向のみに配置されている。In contrast to the conventional semiconductor integrated circuit reticle, the present invention arranges the scribe lines only in the two adjacent directions of the circuit pattern so that the full width of the scribe line can be effectively used without special measures such as light shielding. There is.
次に本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第1図は本発明の第一の実施例を説明するための図であ
る。レチクルの基板であるガラス板の中心101とは別に
回路パターン範囲102の中心103が存在し、その回路パタ
ーン範囲102の右端と上端にスクライブのための余白103
が500ミクロン設けてある。従って1/5縮小投影露光装置
で半導体基板に転写したとき、このスクライブ線は100
ミクロンになり、くり返し露光により配列されたものは
第4図と同様になる。この実施例によればスクライブ線
500ミクロン全幅を重ね合わせ用マーク、その他種々の
検査パターンが有効に使用できる。しかも、そのスクラ
イブ線の露光は一回のみであるため、従来方法にあるよ
うな二重露光されるような害はない。FIG. 1 is a diagram for explaining the first embodiment of the present invention. There is a center 103 of a circuit pattern range 102 apart from the center 101 of the glass plate that is the substrate of the reticle, and margins 103 for scribing are provided at the right and upper ends of the circuit pattern range 102.
Is provided at 500 microns. Therefore, when transferred to a semiconductor substrate with a 1/5 reduction projection exposure apparatus, this scribe line is 100
The size becomes micron, and the ones arranged by repeated exposure are the same as those in FIG. According to this example, the scribe line
It is possible to effectively use a mark for overlaying the entire width of 500 microns and various other inspection patterns. Moreover, since the scribe line is exposed only once, there is no harm such as double exposure as in the conventional method.
第2図は本発明の第2の実施例の図である。本実施例で
はガラス板の中心201と回路パターン領域202の中心が一
致している。従って第1の実施例との差異はガラス板に
対して回路パターン領域が中心にあるか、スクライブ線
203を含めた回路パターン領域が中心にあるかの違いで
ある。すなわち、座標位置の違いのみでその手法,効果
は全く同じてある。FIG. 2 is a diagram of a second embodiment of the present invention. In this embodiment, the center 201 of the glass plate and the center of the circuit pattern area 202 are aligned. Therefore, the difference from the first embodiment is that the circuit pattern area is at the center of the glass plate or the scribe line
The difference is whether the circuit pattern area including 203 is at the center. That is, the method and the effect are exactly the same except for the coordinate position.
以上説明したように本発明は、スクライブ線を回路パタ
ーン領域の周辺2方向のみにすることによって、スクラ
イブ線全幅を有効に使用でき、しかも、スクライブ線領
域が2重露光されることがない。とくに、近年、超LSI
化が進み集積化が急激に進むにつれ、回路パターン領域
内部には回路動作として不要ではあるが、作製工程上必
要な検査パターン等はスクライブ線領域に入れることに
よって集積化、とくにチップの大きさを小さくできるた
め、高速化、コスト低減などその効果は図り知れない。As described above, the present invention makes it possible to effectively use the full width of the scribe line by providing the scribe line only in the two directions around the circuit pattern region, and further, the scribe line region is not double-exposed. Especially in recent years, VLSI
With the rapid progress of integration and rapid integration, it is not necessary to operate the circuit inside the circuit pattern area as a circuit operation. Since it can be made small, its effects such as speeding up and cost reduction are immeasurable.
第1図は本発明の第1の実施例を説明するための図、第
2図は第2の実施例を説明するための図、第3図、第4
図、第5図は従来技術を説明するための図である。 101,201,301,401……ガラス板の中心、102,202,302,402
……回路パターン領域、103,203,303,403……スクライ
ブ線領域。FIG. 1 is a diagram for explaining a first embodiment of the present invention, FIG. 2 is a diagram for explaining a second embodiment, FIG. 3, and FIG.
5 and 5 are views for explaining the conventional technique. 101,201,301,401 …… Center of glass plate, 102,202,302,402
...... Circuit pattern area, 103,203,303,403 …… Scribe line area.
Claims (1)
るスクライブ線領域からなる1チップ分のパターンで構
成され、縮小投影露光装置で使用されるレチクルにおい
て、前記スクライブ線領域が前記集積回路パターン領域
の互いに隣接する2辺の周辺のみに存在していることを
特徴とする半導体集積回路用レチクル。1. A reticle for use in a reduction projection exposure apparatus, which comprises a pattern for one chip consisting of an integrated circuit pattern region and a scribe line region existing around the integrated circuit pattern region, wherein the scribe line region is the integrated circuit pattern region. A semiconductor integrated circuit reticle, which is present only in the periphery of two sides adjacent to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28270788A JPH0721624B2 (en) | 1988-11-08 | 1988-11-08 | Reticle for semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28270788A JPH0721624B2 (en) | 1988-11-08 | 1988-11-08 | Reticle for semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02127641A JPH02127641A (en) | 1990-05-16 |
| JPH0721624B2 true JPH0721624B2 (en) | 1995-03-08 |
Family
ID=17656003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28270788A Expired - Fee Related JPH0721624B2 (en) | 1988-11-08 | 1988-11-08 | Reticle for semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0721624B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103176350A (en) * | 2011-12-26 | 2013-06-26 | 和舰科技(苏州)有限公司 | Mask fabricating method for maximizing quantity of chips on wafer |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4390355B2 (en) | 2000-04-19 | 2009-12-24 | Necエレクトロニクス株式会社 | Reticle for semiconductor integrated circuit |
| JP4838790B2 (en) * | 2007-12-27 | 2011-12-14 | 株式会社沖データ | Medium conveying device, paper feeding device, additional paper feeding device, and image forming device |
| JP5326282B2 (en) * | 2008-01-10 | 2013-10-30 | 富士通セミコンダクター株式会社 | Semiconductor device, method of manufacturing the same, and exposure mask |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5463680A (en) * | 1977-10-29 | 1979-05-22 | Oki Electric Ind Co Ltd | Production of mask for integrated circuit |
| JPS5463678A (en) * | 1977-10-29 | 1979-05-22 | Oki Electric Ind Co Ltd | Production of mask for integrated circuit |
-
1988
- 1988-11-08 JP JP28270788A patent/JPH0721624B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103176350A (en) * | 2011-12-26 | 2013-06-26 | 和舰科技(苏州)有限公司 | Mask fabricating method for maximizing quantity of chips on wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02127641A (en) | 1990-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0519448A (en) | Photoreticle for producing semiconductor device | |
| JP4390355B2 (en) | Reticle for semiconductor integrated circuit | |
| CN116794946A (en) | Photomasks and photolithography methods | |
| CN113075857A (en) | Processing method and processing device of photomask pattern and photomask | |
| JPH0721624B2 (en) | Reticle for semiconductor integrated circuit | |
| US6605395B2 (en) | Method and apparatus for forming a pattern on an integrated circuit using differing exposure characteristics | |
| US5853927A (en) | Method of aligning a mask in photolithographic process | |
| JP2912505B2 (en) | Method for manufacturing semiconductor device | |
| JP3485481B2 (en) | Method for manufacturing semiconductor device | |
| US20050008942A1 (en) | [photomask with internal assistant pattern forenhancing resolution of multi-dimension pattern] | |
| JPH0387013A (en) | Manufacture of semiconductor device | |
| JPH10312049A (en) | Reticle | |
| JPH02135343A (en) | Mask | |
| KR200188169Y1 (en) | Photo mask | |
| JPH10288835A (en) | Reticle | |
| JP2977471B2 (en) | Alignment method of wafer alignment mark | |
| JPS63223750A (en) | Mask for exposure | |
| JP2682295B2 (en) | Exposure method | |
| JP2764925B2 (en) | Method for manufacturing semiconductor device | |
| JP2001033942A (en) | Photomask, exposure apparatus, and semiconductor wafer | |
| KR20000000593A (en) | Method for forming an overlapping mark of semiconductor devices | |
| JP2000131824A (en) | Method for manufacturing semiconductor integrated circuit device | |
| JPS59144125A (en) | Reticule | |
| KR20060116491A (en) | Photomask | |
| JPH0144009B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |