JPH0721642B2 - Method for forming pattern of photosensitive polyimide - Google Patents
Method for forming pattern of photosensitive polyimideInfo
- Publication number
- JPH0721642B2 JPH0721642B2 JP61143742A JP14374286A JPH0721642B2 JP H0721642 B2 JPH0721642 B2 JP H0721642B2 JP 61143742 A JP61143742 A JP 61143742A JP 14374286 A JP14374286 A JP 14374286A JP H0721642 B2 JPH0721642 B2 JP H0721642B2
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- JP
- Japan
- Prior art keywords
- polyimide
- group
- pattern
- compounds
- organic solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
- G03C5/18—Diazo-type processes, e.g. thermal development, or agents therefor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、耐熱性及び寸法安定性に優れると共に電気的
及び機械的性質にも優れたポリイミドのパターンを高精
度で鮮明に且つ容易に形成し得る方法に関するもので、
本発明の方法により得られたポリイミドのパターンは、
特に、半導体、抵抗体等の電子部品のパッシベーション
膜、多層集積回路の層間絶縁膜、プリント回路の半田付
け保護膜、液晶用配向膜、メモリー素子のα線遮蔽膜、
電解コンデンサの絶縁膜、エッチングレジスト等として
好適に使用することができ、その他、ポリイミドの公知
の用途への適用が可能である。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is capable of forming a polyimide pattern having excellent heat resistance and dimensional stability as well as electrical and mechanical properties with high precision, vividness and clarity. Is about how you can
The pattern of the polyimide obtained by the method of the present invention,
In particular, semiconductors, passivation films for electronic components such as resistors, interlayer insulating films for multilayer integrated circuits, soldering protective films for printed circuits, liquid crystal alignment films, α-ray shielding films for memory devices,
It can be suitably used as an insulating film of an electrolytic capacitor, an etching resist, etc., and can be applied to other known uses of polyimide.
芳香族ポリイミドは、その耐熱性、電気的特性、機械的
特性等から電子部品への応用に敵した有機材料である。
更に、芳香族ポリイミドに感光性を付与すれば、作業工
程の合理化がなされるため、感光性の付与について各種
の検討がなされてきた。Aromatic polyimide is an organic material suitable for application to electronic parts due to its heat resistance, electrical characteristics, mechanical characteristics, and the like.
Further, if photosensitivity is imparted to the aromatic polyimide, the work process is rationalized, and therefore various studies have been made on imparting photosensitivity.
芳香族ポリイミドに感光性を付与する方法としては、芳
香族ポリイミドは一般に有機溶媒に難溶であるので、感
光性を付与するための可溶性前駆体を用いる方法が知ら
れている。As a method of imparting photosensitivity to an aromatic polyimide, a method of using a soluble precursor for imparting photosensitivity is known since aromatic polyimide is generally hardly soluble in an organic solvent.
例えば、特開昭54-116216号公報及び特開昭54-116217号
公報に記載されている架橋性基を可溶性前駆体に化学的
に結合する方法や、特開昭54-145794号公報及び特開昭5
7-168942号公報に記載されている架橋性単量体を混合す
る方法等がある。For example, a method of chemically bonding a crosslinkable group to a soluble precursor described in JP-A-54-116216 and JP-A-54-116217, and JP-A-54-145794 and Kaisho 5
There is a method of mixing a crosslinkable monomer described in JP-A No. 7-168942.
しかし、上記の何れの方法も、光加工性後、加熱処理に
よりイミド閉環を行う必要があり、その際、イミド閉環
に伴う脱水と架橋性基成分の揮散による体積収縮とによ
って、膜厚の損失及び寸法精度の低下が起きることは避
けられない欠点である。更に、加熱処理工程は、他の電
子部品或いは有機材料の劣化を招く可能性もある。However, in any of the above methods, it is necessary to perform imide ring closure by heat treatment after photoprocessing, in which case, dehydration accompanying imide ring closure and volume contraction due to volatilization of the crosslinkable group component cause loss of film thickness. It is an unavoidable drawback that the dimensional accuracy is deteriorated. Furthermore, the heat treatment process may cause deterioration of other electronic components or organic materials.
上述のイミド閉環に伴う体積収縮による寸法精度の劣化
を防ぐために、可溶性ポリイミドに架橋性基を化学的に
結合した感光性ポリイミドが、特開昭58-29821号公報及
び特開昭61-59334号公報に提案されている。In order to prevent the dimensional accuracy from deteriorating due to the volume shrinkage associated with the imide ring closure, a photosensitive polyimide in which a crosslinkable group is chemically bonded to a soluble polyimide is disclosed in JP-A-58-29821 and JP-A-61-59334. Proposed in the gazette.
しかし、これらの感光性ポリイミドも、高温時の架橋性
基揮散に伴う体積収縮による寸法精度の劣化は避けられ
ず、また、架橋性基導入のために煩雑な工程を必要とす
る。更に、前者(特開昭58-29821号公報)のポリイミド
は、光硬化性(感光性)に劣り、精密且つ鮮明なポリイ
ミドのパターンを得るためには長時間の露光を要する。However, these photosensitive polyimides also inevitably suffer from deterioration in dimensional accuracy due to volume contraction due to volatilization of the crosslinkable group at high temperature, and require a complicated step for introducing the crosslinkable group. Further, the former polyimide (JP-A-58-29821) is inferior in photo-curability (photosensitivity) and requires long exposure for obtaining a precise and clear polyimide pattern.
また、比較的低分子の架橋性アルキル基をポリイミドに
直接結合した感光性ポリイミドが、特開昭58-1917号公
報及び特開昭60-155277号公報に提案されている。Further, a photosensitive polyimide in which a relatively low molecular weight crosslinkable alkyl group is directly bonded to a polyimide is proposed in JP-A-58-1917 and JP-A-60-155277.
しかし、これらの感光性ポリイミドは、体積収縮による
寸法精度の劣化は少ないが、光硬化性に劣り、精密且つ
鮮明なポリイミドのパターンを得るためには長時間の露
光を要するという欠点を有する。However, although these photosensitive polyimides are less likely to deteriorate in dimensional accuracy due to volume shrinkage, they are inferior in photocurability and have a drawback that long exposure is required to obtain a precise and clear polyimide pattern.
従って、本発明の目的は、耐熱性及び寸法安定性に優れ
ると共に電気的及び機械的性質にも優れたポリイミドの
パターンを高精度で鮮明に且つ容易に形成し得る方法を
提供することにある。Therefore, it is an object of the present invention to provide a method capable of forming a polyimide pattern having excellent heat resistance and dimensional stability as well as electrical and mechanical properties with high precision, clearly and easily.
本発明者等は、前記目的を達成すべく種々検討した結
果、ビフェニルテトラカルボン酸成分と有機ジアミン成
分との重縮合物からなる有機溶媒可溶性ポリイミドに、
特定のアジド化合物を添加した組成物が、架橋性基を有
するポリイミドや架橋性添加物を含まないにも拘わら
ず、特定のアミン化合物含有現像液に対して高い感光性
を呈することを知見した。The present inventors, as a result of various studies to achieve the above objects, to an organic solvent-soluble polyimide consisting of a polycondensate of a biphenyltetracarboxylic acid component and an organic diamine component,
It was found that the composition containing a specific azide compound exhibits high photosensitivity to a specific amine compound-containing developer, even though the composition does not contain a polyimide having a crosslinking group or a crosslinking additive.
本発明は、上記知見に基づきなされたもので、ビフェニ
ルテトラカルボン酸成分と有機ジアミン成分との重縮合
物からなる有機溶媒可溶性の芳香族ポリイミドと、芳香
族アジド化合物とからなる、有機溶媒可溶性の感光性ポ
リイミド組成物を用いてポリイミド膜を形成し、該ポリ
イミド膜を、所定のパターン状に露光後、下記1群の化
合物群から選択される一種若しくは二種以上の化合物か
らなる現像液、又は下記1群の加護付物から選択される
一種若しくは二種以上の化合物と下記2群の化合物群か
ら選択される一種若しくは二種以上の化合物との混合物
からなる現像液で現像することを特徴とする感光性ポリ
イミドのパターン形成方法を提供するものである。The present invention was made based on the above findings, an organic solvent-soluble aromatic polyimide consisting of a polycondensation product of a biphenyltetracarboxylic acid component and an organic diamine component, and an aromatic azide compound, organic solvent-soluble A polyimide film is formed using a photosensitive polyimide composition, the polyimide film is exposed to light in a predetermined pattern, and then a developer containing one or more compounds selected from the following group of compounds, or Developing with a developer comprising a mixture of one or more compounds selected from the following group of compounds and one or more compounds selected from the following group of compounds: A method of forming a pattern of a photosensitive polyimide is provided.
1群:モノエタノールアミン、ヒドラジン、 CnH2n+1-NH2(式中、nは3以上の整数を示す。)、NH2
-CnH2n-NH2(式中、nは2以上の整数を示す。) 2群:水、アルコール系化合物 以下に本発明の感光性ポリイミドのパターン形成方法に
ついて詳述する。Group 1: monoethanolamine, hydrazine, (. Shown in the formula, n 3 or more integer) C n H 2n + 1 -NH 2, NH 2
(Wherein, n represents an integer of 2 or more.) -C n H 2n -NH 2 2 groups: detail water, pattern formation method of the photosensitive polyimide of the present invention the following alcohol compounds.
本発明で用いられる感光性ポリイミド組成物を構成する
有機溶媒可溶性のポリイミドは、ビフェニルテトラカル
ボン酸成分と有機ジアミン成分とを公知の方法で重合・
イミド化することにより得ることができる。The organic solvent-soluble polyimide constituting the photosensitive polyimide composition used in the present invention is obtained by polymerizing a biphenyltetracarboxylic acid component and an organic diamine component by a known method.
It can be obtained by imidization.
上記有機有機溶媒可溶性のポリイミドの製造に用いられ
る上記ビフェニルテトラカルボン酸成分としては、具体
的には3,3′,4,4′−ビフェニルテトラカルボン酸又は
その二無水物、2,2′,3,3′−ビフェニルテトラカルボ
ン酸又はその二無水物、2,3,3′,4′,−ビフェニルテ
トラカルボン酸又はその二無水物等が挙げられ、これら
の内でも、2,3,3′,4′−ビフェニルテトラカルボン酸
又はその二無水物がポリマーの溶解性の上から特に好ま
しい。The biphenyltetracarboxylic acid component used in the production of the organic-organic solvent-soluble polyimide, specifically, 3,3 ', 4,4'-biphenyltetracarboxylic acid or a dianhydride thereof, 2,2', 3,3′-biphenyltetracarboxylic acid or a dianhydride thereof, 2,3,3 ′, 4 ′,-biphenyltetracarboxylic acid or a dianhydride thereof, and the like, and among these, 2,3,3 ', 4'-Biphenyltetracarboxylic acid or its dianhydride is particularly preferable from the viewpoint of polymer solubility.
また、上記有機溶媒可溶性のポリイミドの製造に用いら
れる上記有機ジアミン成分としては、耐熱性の観点か
ら、2つのアミノ基が芳香族環又は芳香族複素環に直接
結合している有機ジアミン化合物が好ましく、かかる有
機ジアミン化合物の例としては、下記式で示されるもの
等が挙げられる。In addition, as the organic diamine component used in the production of the organic solvent-soluble polyimide, an organic diamine compound in which two amino groups are directly bonded to an aromatic ring or an aromatic heterocycle is preferable from the viewpoint of heat resistance. Examples of such organic diamine compounds include those represented by the following formula.
これらの有機ジアミン化合物の内でも、多環芳香族ジア
ミン化合物がポリマーの溶解性の上から特に好ましい。 Among these organic diamine compounds, polycyclic aromatic diamine compounds are particularly preferable from the viewpoint of polymer solubility.
また、上記の有機ジアミン化合物は、ポリイミドの耐熱
性に悪影響を与えない範囲内で、アルキル基、アルコキ
シル基、ヒドロキシル基等の置換基を有していても差し
支えない。In addition, the above organic diamine compound may have a substituent such as an alkyl group, an alkoxyl group, and a hydroxyl group within a range that does not adversely affect the heat resistance of the polyimide.
上記有機ジアミン成分としては、上記有機ジアミン化合
物を単独で使用しても良く、又2種以上併用しても良
い。As the organic diamine component, the organic diamine compounds may be used alone or in combination of two or more.
更に、ポリイミドの接着性を向上させるために、耐熱性
を低下させない範囲で、上記有機ジアミン成分として、
シロキサン製造を有する脂肪族性の化合物を上記有機ジ
アミン化合物と併用することもできる。かかる化合物の
好ましい例としては、下記式で示される化合物等が挙げ
られる。Further, in order to improve the adhesiveness of the polyimide, as long as the heat resistance is not reduced, as the organic diamine component,
Aliphatic compounds having siloxane production can also be used in combination with the above organic diamine compounds. Preferred examples of such compounds include compounds represented by the following formula.
本発明で用いられる上記有機溶媒可溶性のポリイミド
は、ポリイミド0.5g/N−メチル−2−ピロリドン100ml
の濃度の溶液として30℃において測定した対数粘度が0.
1〜3.0特に0.2〜2.0の範囲内にあるものが好ましい。 The organic solvent-soluble polyimide used in the present invention is polyimide 0.5 g / N-methyl-2-pyrrolidone 100 ml.
The logarithmic viscosity measured at 30 ° C as a solution having a concentration of 0.
Those in the range of 1 to 3.0, especially 0.2 to 2.0 are preferable.
本発明で用いられる上記有機溶媒可溶性のポリイミドの
製造について更に詳述すると、前記重縮合物を合成する
際の前記ビフェニルテトラカルボン酸成分と前記有機ジ
アミン成分との使用割合は略等モルである。そして、両
成分を、100℃以上の高温において一段階で重合・イミ
ド化することにより合成できる。また、比較的低温にお
いて、先ず重合反応を行わせ、次いでイミド化反応を行
わせる二段階反応によっても合成できる。The production of the organic solvent-soluble polyimide used in the present invention will be described in more detail. The ratio of the biphenyltetracarboxylic acid component and the organic diamine component used when synthesizing the polycondensate is approximately equimolar. Then, both components can be synthesized by polymerizing and imidizing in a single step at a high temperature of 100 ° C. or higher. It can also be synthesized by a two-step reaction in which a polymerization reaction is first performed and then an imidization reaction is performed at a relatively low temperature.
また、本発明で用いられる感光性ポリイミド組成物を構
成する芳香族アジド化合物としては、芳香族モノアジド
化合物、芳香族ポリアジド化合物(特に芳香族ビスアジ
ド化合物)の何れも用いられ、具体的には、 等の芳香族モノアジド化合物、及び 等の芳香族ビスアジド化合物が挙げられる。Further, as the aromatic azide compound constituting the photosensitive polyimide composition used in the present invention, any of an aromatic monoazide compound and an aromatic polyazide compound (particularly an aromatic bisazide compound) is used, and specifically, An aromatic monoazide compound such as And other aromatic bisazide compounds.
上記芳香族アジド化合物の配合量は、前記有機溶媒可溶
性ポリイミド100重量部に対して0.2〜30重量部、特に1
〜20重量部とするのが好ましい。配合量が0.2重量部よ
り少ないと、得られる組成物の感度が低くなり、また30
重量部より多いと、得られる組成物により形成される膜
の性質が低下する。The amount of the aromatic azide compound to be blended is 0.2 to 30 parts by weight, especially 1 to 100 parts by weight of the organic solvent-soluble polyimide.
It is preferably about 20 parts by weight. If the blending amount is less than 0.2 parts by weight, the sensitivity of the resulting composition is lowered, and
If the amount is larger than the amount by weight, the properties of the film formed by the resulting composition deteriorate.
また、本発明で現像液として用いられる前記1群の化合
物群において、CnH2n+1-NH2(式中、nは3以上の整数
を示す。)で表される好ましい化合物の例としては、プ
ロピルアミン、ブチルアミン等が挙げられ、NH2-CnH2n-
NH2(式中、nは2以上の整数を示す。)で表される好
ましい化合物の例としては、エチレンジアミン、トリメ
チレンジアミン等が挙げられる。In addition, as an example of a preferable compound represented by C n H 2n + 1 -NH 2 (wherein n represents an integer of 3 or more) in the above-mentioned 1 group of compounds used as a developing solution in the present invention, Include propylamine, butylamine, etc., and NH 2 —C n H 2n —
Examples of preferable compounds represented by NH 2 (wherein n is an integer of 2 or more) include ethylenediamine and trimethylenediamine.
また、本発明で前記1群の化合物と併用される前記2群
の化合物群のアルコール系化合物としては、CnH2n+1−O
H(式中、nは1以上の整数を示す。)、2−プロパノ
ール、R1-OCH2CH2OR2(式中、R1はH又はR2を示し、R2
はCH3、C2H5、C4H9を示す。)、R1-OCH2CH2OCH2CH2OR2
(式中、R1はH又はR2を示し、R2はCH3、C2H5、C4H9を
示す。)等を挙げられる。As the alcohol compound of the compounds of the second group to be used in combination with the compound of the first group in the present invention, C n H 2n + 1 -O
H (in the formula, n represents an integer of 1 or more), 2-propanol, R 1 -OCH 2 CH 2 OR 2 (In the formula, R 1 represents H or R 2 , and R 2
Represents CH 3 , C 2 H 5 , and C 4 H 9 . ), R 1 -OCH 2 CH 2 OCH 2 CH 2 OR 2
(In the formula, R 1 represents H or R 2 , and R 2 represents CH 3 , C 2 H 5 , or C 4 H 9. ) and the like.
上記のCnH2n+1−OHで表される好ましい化合物の例とし
ては、メタノール、エタノール、1−プロパノール等が
挙げられ、また上記のR1-OCH2CH2CH2OR2で表される好ま
しい化合物の例としては、エチルセロソルブ、ブチルセ
ロソルブ等が挙げられ、また上記のR1-OCH2CH2OCH2CH2O
R2で表される好ましい化合物の例としては、エチルカル
ビトール、ブチルカルビトール等が挙げられる。Examples of preferred compounds represented by the above C n H 2n + 1 -OH include methanol, ethanol, 1-propanol, etc., and also represented by the above R 1 -OCH 2 CH 2 CH 2 OR 2. Examples of preferred compounds include ethyl cellosolve, butyl cellosolve and the like, and the above R 1 -OCH 2 CH 2 OCH 2 CH 2 O.
Examples of preferred compounds represented by R 2 include ethyl carbitol, butyl carbitol and the like.
本発明で用いられる現像液としては、前記1群の化合物
が現像液重量の20〜100重量%で、前記2群の化合物が
現像液重量の80〜0重量%であるものが好ましい。As the developing solution used in the present invention, it is preferable that the compound of the first group is 20 to 100% by weight of the developing solution and the compound of the second group is 80 to 0% by weight of the developing solution.
また、本発明で用いられる前記現像液には、必要に応じ
て、N−メチル−2−ピロリドン、N,N−ジメチルホル
ムアミド、N,N−ジメチルアセトアミド、ヘキサメチレ
ンホスアミンド等の溶媒を混合することができる。If necessary, the developer used in the present invention may be mixed with a solvent such as N-methyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide and hexamethylenephosamined. can do.
而して、本発明の感光性ポリイミドのパターン形成方法
を実施するに際しては、先ず、前記感光性ポリイミド組
成物を用いて、ポリイミド膜を形成する。Thus, in carrying out the method for forming a photosensitive polyimide pattern of the present invention, first, a polyimide film is formed using the photosensitive polyimide composition.
上記ポリイミド膜の形成の形成は、例えば次のようにし
て行うことができる。The formation of the polyimide film can be performed, for example, as follows.
前記感光性ポリイミド組成物を有機溶媒に溶解して、感
光性ポリイミド組成物の有機溶媒溶液を調製する。上記
有機溶媒としては、N,N−ジメチルホルムアミド、N,N−
ジメチルアセトアミド、N−メチル−2−ピロリドン、
N−ビニル−2−ピロリドン、ジメチルスルホキシド、
ヘキサメチレンホスホアミンド、m−クレゾール等を挙
げることができ、更にこれらの溶媒とキシレン、エチル
セロソルブ、ジグライム、ジオキサン等との混合溶媒を
用いることもできる。上記感光性ポリイミド組成物の有
機溶媒溶液の好ましいポリマー濃度は2〜40重量%であ
る。The photosensitive polyimide composition is dissolved in an organic solvent to prepare an organic solvent solution of the photosensitive polyimide composition. As the organic solvent, N, N-dimethylformamide, N, N-
Dimethylacetamide, N-methyl-2-pyrrolidone,
N-vinyl-2-pyrrolidone, dimethyl sulfoxide,
Hexamethylene phosphoamine, m-cresol and the like can be mentioned, and a mixed solvent of these solvents and xylene, ethyl cellosolve, diglyme, dioxane or the like can also be used. The preferable polymer concentration of the organic solvent solution of the photosensitive polyimide composition is 2 to 40% by weight.
上記の感光性ポリイミド組成物の有機溶媒溶液は、例え
ば、前記の酸成分とジアミン成分とを重合・イミド化反
応させて得られた反応溶液を貧溶媒に滴下し、前記有機
溶媒可溶性のポリイミドを析出乾燥させた後、該ポリイ
ミドを上記ポリマー濃度で、上記有機溶媒に、前記芳香
族アジド化合物と共に溶解させることにより調整するこ
とができる。また、150℃以上の温度で1段階で重合・
イミド反応を行った場合には、反応溶液を冷却後、該反
応溶液に前記芳香族アジド化合物を添加することによっ
ても調製することができる。The organic solvent solution of the photosensitive polyimide composition, for example, a reaction solution obtained by polymerizing and imidizing the acid component and the diamine component is added dropwise to a poor solvent, the organic solvent-soluble polyimide After precipitation and drying, the polyimide can be prepared by dissolving the polyimide at the polymer concentration in the organic solvent together with the aromatic azide compound. In addition, polymerization at a temperature of 150 ° C or higher in one step
When the imide reaction is carried out, it can also be prepared by cooling the reaction solution and then adding the aromatic azide compound to the reaction solution.
上記の感光性ポリイミド組成物の有機溶媒溶液には、更
にそん感光性能を高めるに、1−ニトロピレン、1,8−
ジニトロピレン、シアノアクリジン等のアジド化合物の
増感剤となる化合物を添加することができる。In the organic solvent solution of the above photosensitive polyimide composition, to further enhance the photosensitivity, 1-nitropyrene, 1,8-
A compound serving as a sensitizer for an azide compound such as dinitropyrene or cyanoacridine can be added.
また、上記の感光性ポリイミド組成物の有機溶媒溶液に
は、支持体との接着性を向上させるために、適宜、接着
助剤を添加することができる。かかる接着助剤として
は、例えば、γ−メタクリルオキシプロピルトリメトキ
シシラン、γ−アミノプロピルトリエトキシシラン、γ
−グリシドキシプロピルトリメトキシシラン、γ−(2
−アミノエチル)アミノプロピルメチルジメトキシシラ
ン等を挙げることができる。Moreover, in order to improve the adhesiveness to the support, an adhesion aid can be appropriately added to the organic solvent solution of the photosensitive polyimide composition. Examples of such an adhesion aid include γ-methacryloxypropyltrimethoxysilane, γ-aminopropyltriethoxysilane, and γ.
-Glycidoxypropyltrimethoxysilane, γ- (2
-Aminoethyl) aminopropylmethyldimethoxysilane and the like can be mentioned.
次いで、上記の如くして調製した感光性ポリイミド組成
物の有機溶媒溶液を基板に塗布し、これを乾燥して有機
溶媒を除去し、前記感光性ポリイミドからなるポリイミ
ド膜を得る。Then, the organic solvent solution of the photosensitive polyimide composition prepared as described above is applied to the substrate and dried to remove the organic solvent to obtain a polyimide film made of the photosensitive polyimide.
基板への塗布は、例えば回転塗布機で行うことができ
る。塗膜の乾燥は150℃以下、好ましくは100℃以下で行
うと良い。この際減圧してもしなくても良い。The application to the substrate can be performed by, for example, a spin coater. The coating film may be dried at 150 ° C or lower, preferably 100 ° C or lower. At this time, the pressure may or may not be reduced.
次いで、上述の如くして得られたポリイミド膜を所定の
パターン状に露光する。Next, the polyimide film obtained as described above is exposed in a predetermined pattern.
上記露光は、上記ポリイミド膜にネガ型のフォトマスタ
を置き、紫外線、可視光線、電子線、X線等の活性光線
を照射することにより行うことができる。この際、高圧
水銀灯による紫外線を照射した場合、露光量は、30〜50
mJ/cm2(350nm波長域で測定)程度で充分である。The exposure can be performed by placing a negative-type photomaster on the polyimide film and irradiating with active rays such as ultraviolet rays, visible rays, electron beams, and X-rays. At this time, when the ultraviolet rays from the high pressure mercury lamp are irradiated, the exposure amount is 30 to 50
About mJ / cm 2 (measured in the 350 nm wavelength range) is sufficient.
次いで、露光後、上記ポリイミド膜を前記現像液で現像
し、感光性ポリイミドのパターンを得る。Then, after exposure, the polyimide film is developed with the developer to obtain a photosensitive polyimide pattern.
上記現像は、上記ポリイミド膜を前記現像液中に浸漬す
る等して、上記ポリイミド膜の未露光の部分を現像液で
洗い流すことにより行うことができる。The development can be performed by immersing the polyimide film in the developing solution to wash away the unexposed portion of the polyimide film with the developing solution.
また、上記現像は、現像液温度が0〜150℃の範囲で行
うことが好ましい。Further, the above-mentioned development is preferably carried out at a developer temperature of 0 to 150 ° C.
上述の如くして得られた感光性ポリイミドのパターン
は、そのまま前記の各種用途に使用可能であるが、塗膜
中に残存する微量の溶媒を除去するために200℃程度の
温度で加熱処理することが好ましい。更に、上記パター
ンは、架橋性基を有するポリイミドや架橋性添加物を含
まない感光性ポリイミド組成物により形成されているた
め、高温時の架橋性基揮散に伴う体積収縮が起こる惧れ
がなく、用途によっては400℃程度まで加熱処理するこ
とも可能である。The pattern of the photosensitive polyimide obtained as described above can be used as it is for the various applications described above, but is heat-treated at a temperature of about 200 ° C. to remove a trace amount of the solvent remaining in the coating film. It is preferable. Furthermore, since the pattern is formed by a photosensitive polyimide composition that does not include a polyimide having a crosslinkable group or a crosslinkable additive, there is no possibility of volume shrinkage accompanying volatilization of the crosslinkable group at high temperature, Depending on the application, heat treatment up to about 400 ° C is also possible.
以下、本発明で用いられる感光性ポリイミド組成物を構
成する有機溶媒可溶性のポリイミドの製造を示す製造
例、及び本発明の実施例を比較例と共に挙げる。Hereinafter, a production example showing production of an organic solvent-soluble polyimide constituting the photosensitive polyimide composition used in the present invention, and an example of the present invention will be given together with comparative examples.
製造例1 窒素気流下で、2,3,3′,4′−ビフェニルテトラカルボ
ン酸二無水物6.721g及びビス〔4−(4′−アミノフェ
ノキシ)フェニル〕スルホン10.062gをN−メチル−2
−ピロリドン(NMP)80mlに溶解し、180℃の反応温度で
5時間攪拌して、重合・イミド化反応を行った。この反
応溶液をメタノール中に滴下し、ポリイミドを析出さ
せ、濾別して、ポリイミド粉末を得た。このポリイミド
粉末の対数粘度(濃度:ポリイミド粉末0.5g/NMP100m
l、測定温度:30℃)は0.85であった。Production Example 1 Under nitrogen stream, 6.721 g of 2,3,3 ', 4'-biphenyltetracarboxylic dianhydride and 10.062 g of bis [4- (4'-aminophenoxy) phenyl] sulfone were mixed with N-methyl-2.
-Dissolved in 80 ml of pyrrolidone (NMP) and stirred at a reaction temperature of 180 ° C for 5 hours to carry out polymerization and imidization reaction. This reaction solution was dropped into methanol to precipitate a polyimide, which was filtered to obtain a polyimide powder. Logarithmic viscosity of this polyimide powder (concentration: polyimide powder 0.5g / NMP100m
l, measurement temperature: 30 ° C) was 0.85.
製造例2〜5 製造例1におけるポリイミド合成条件を、それぞれ下記
表−1に示す条件に代えた以外は製造例1と同様にして
下記表−1に示す対数粘度を有するポリイミドをそれぞ
れ得た。Production Examples 2 to 5 Polyimides having logarithmic viscosities shown in Table 1 below were obtained in the same manner as in Production Example 1 except that the polyimide synthesis conditions in Production Example 1 were changed to the conditions shown in Table 1 below.
実施例1 製造例1で得られたポリイミド粉末0.50g及び2−アジ
ドピレン50mgをNMP3.67gに溶解した後、1μmのフィル
ターにより濾過し、感光性ポリイミド組成物の有機溶媒
溶液を得た。 Example 1 0.50 g of the polyimide powder obtained in Production Example 1 and 50 mg of 2-azidopyrene were dissolved in 3.67 g of NMP and then filtered through a 1 μm filter to obtain a solution of a photosensitive polyimide composition in an organic solvent.
得られた溶液を、スピンナーを用いて表面を粗面化した
銅板上に2000r.p.m.で30秒間回転塗布し、次いで、60℃
で30分間乾燥して、3μm厚のポリイミド膜を得た。The resulting solution was spin coated on a copper plate with a surface roughened using a spinner at 2000 rpm for 30 seconds, then at 60 ° C.
And dried for 30 minutes to obtain a polyimide film having a thickness of 3 μm.
次いで、このポリイミド膜の感光性の程度、即ち感度を
次のようにして測定した。Next, the degree of photosensitivity of this polyimide film, that is, the sensitivity was measured as follows.
上記ポリイミド膜に、グレースケール(コダック社製、
Photographic Step tablet no.2 21 STEPS)を介して、
2Kw超高圧水銀灯((株)オーク製作所製、ジェットラ
イト)により70cmの距離から紫外線を30.3秒間照射し
た。このポリイミド膜を、60℃に加温したモノエタノー
ルアミンにより現像し、残膜段数を感度とした。この測
定において、グレースケールの各ステップを透過した35
0nmの波長域での紫外線照射量(mJ/cm2)を下記表−3
に示す(測定は(株)オーク製作所製の紫外線照度計UV
-M01を用いた)。上記ポリイミド膜は11段目の照射量迄
硬化した。On the polyimide film, gray scale (manufactured by Kodak Co.,
Photographic Step tablet no.2 21 STEPS)
Ultraviolet rays were irradiated for 30.3 seconds from a distance of 70 cm by a 2 Kw ultra-high pressure mercury lamp (Jetlight, manufactured by Oak Manufacturing Co., Ltd.). This polyimide film was developed with monoethanolamine heated to 60 ° C, and the number of remaining film steps was taken as the sensitivity. In this measurement, 35 transmitted through each grayscale step
The UV irradiation dose (mJ / cm 2 ) in the wavelength range of 0 nm is shown in Table 3 below.
(The measurement is made by Oak Manufacturing Co., Ltd. UV illuminometer UV
-M01 was used). The polyimide film was cured up to the 11th dose.
実施例2〜13及び比較例1〜2 下記表−2に示す、ポリイミド、有機アジド化合物及び
現像液をそれぞれ用いた以外は実施例1と同様の方法に
より、本発明の感光性がポリイミド組成物の有機溶媒溶
液をそれぞれ得、これらの溶液からなるポリイミド膜
(厚さ2〜3μm)の感度をそれぞれ測定した。その結
果を下記表−2に示す。Examples 2 to 13 and Comparative Examples 1 to 2 Photosensitive polyimide compositions of the present invention were prepared in the same manner as in Example 1 except that polyimide, organic azide compound and developer shown in Table 2 below were used. Each of the organic solvent solutions was obtained, and the sensitivities of the polyimide films (thickness 2 to 3 μm) made of these solutions were measured. The results are shown in Table 2 below.
実施例14 SiO2を表面に被覆したガラス基板上にシランカプラー
〔信越科学(株)製KBM603:6−(2−アミノエチル)ア
ミノプロピルトリメトキシシラン〕の0.3%2−プロパ
ノール溶液を2500r.p.m.で30秒間回転塗布した。このカ
プラー溶液塗布基板を、室温で3分間風乾した後、150
℃で10分間加熱処理し、基板へのカプラー処理を行っ
た。 Example 14 A glass substrate whose surface was coated with SiO 2 was treated with a 0.3% 2-propanol solution of a silane coupler [KBM603: 6- (2-aminoethyl) aminopropyltrimethoxysilane manufactured by Shin-Etsu Scientific Co., Ltd.] in 2500 rpm. It was spin coated for 30 seconds. This coupler solution coated substrate was air dried at room temperature for 3 minutes, then 150
The substrate was heat-treated at 10 ° C. for 10 minutes to perform coupler treatment on the substrate.
一方、製造例1で得られたポリイミド粉末1.1g及び4−
アジドベンザルアセトフェノン0.11gをNMP8.9gに溶解し
た後、1μmのフィルターにより濾過し、感光製ポリイ
ミド組成物の有機溶媒溶液を得た。On the other hand, 1.1 g of the polyimide powder obtained in Production Example 1 and 4-
0.11 g of azidobenzalacetophenone was dissolved in 8.9 g of NMP and then filtered through a 1 μm filter to obtain a solution of a photosensitive polyimide composition in an organic solvent.
得られた溶液を、上記カプラー処理を行ったガラス基板
上にスピンナーを用いて2500r.p.m.で30秒間回転塗布
し、次いで、この塗膜を70℃で30分間加熱乾燥して、1.
9μm厚のポリイミド膜を得た。このポリイミド膜にテ
ストマスク(凸版印刷(株)製、トッパンテストチャー
トP)を介して250W高圧水銀灯の光(ミカサ(株)製、
マスクアライメント装置MA-10型使用)を4.6秒間照射し
た。露光面での紫外線強度は350nm波長域で6.5mW/cm
2(測定は実施例1で用いたものと同じ照度計を用い
た)であり、即ち30mJ/cm2露光した。露光後、60℃に加
温したモノエタノールアミンにより現像し、次いで、室
温のモノエタノールアミン引き続き室温の2−プロパノ
ールを用いて洗浄して、感光性ポリイミドのパターンを
得た。得られたパターンで識別できる最小のマスタパタ
ーンを解像度と定義すると、このパターンの解像度は3
μmであり、シャープな端面を持っていた。また、現像
後のポリイミド膜厚は1.4μmであった。The resulting solution was spin-coated on a glass substrate that had been subjected to the above-mentioned coupler treatment using a spinner at 2500 rpm for 30 seconds, and then this coating film was dried by heating at 70 ° C. for 30 minutes, and 1.
A 9 μm thick polyimide film was obtained. A 250 W high-pressure mercury lamp (Mikasa Co., Ltd.) was passed through this polyimide film through a test mask (Toppan Test Chart P, Toppan Printing Co., Ltd.).
The mask alignment device MA-10 type was used) for 4.6 seconds. UV intensity on exposed surface is 6.5mW / cm in 350nm wavelength range
2 (measurement was done using the same luminometer as used in Example 1), ie 30 mJ / cm 2 exposure. After exposure, it was developed with monoethanolamine heated to 60 ° C., and then washed with room temperature monoethanolamine and then room temperature 2-propanol to obtain a photosensitive polyimide pattern. If the smallest master pattern that can be identified by the obtained pattern is defined as the resolution, the resolution of this pattern is 3
It had a sharp end face. The polyimide film thickness after development was 1.4 μm.
次いで、このパターンを150℃で30分間加熱した後、200
℃で30分間加熱し、パターン中の残溶媒を除去したとこ
ろ、膜厚は1.2μmとなった。次いで、このパターンを
窒素気流下で300℃で30分間加熱した後、400℃で30分間
加熱したところ、膜厚は1.1μmであった。400℃で加熱
後もこのパターンは変形、ぼやけ等が見られず、良好な
耐熱性を有していた。This pattern is then heated at 150 ° C for 30 minutes, then 200
When the residual solvent in the pattern was removed by heating at 30 ° C. for 30 minutes, the film thickness was 1.2 μm. Next, when this pattern was heated at 300 ° C. for 30 minutes in a nitrogen stream and then at 400 ° C. for 30 minutes, the film thickness was 1.1 μm. Even after heating at 400 ° C., the pattern had no deformation or blurring and had good heat resistance.
実施例15〜17 製造例1で得られたポリイミドを用い、下記表−4に示
す配合組成とした以外は実施例14と同様にして、感光性
ポリイミド組成物の有機溶媒溶液を得た。この溶液を用
いて、実施例14と同様な方法でパターン形成及び加熱処
理を行った。尚、現像液は、実施例15〜17全てにおいて
モノエタノールアミンを用いたが、実施例15及び16では
65℃に加温した現像液を用い、実施例17では60℃に加温
した現像液を用いた。また、感光性ポリイミド組成物の
有機溶媒溶液を基板に塗布する際の塗布回転数は、それ
ぞれ下記表−5に示す塗布回転数とした。Examples 15 to 17 An organic solvent solution of a photosensitive polyimide composition was obtained in the same manner as in Example 14 except that the polyimide obtained in Production Example 1 was used and the compounding composition shown in Table 4 below was used. Using this solution, pattern formation and heat treatment were performed in the same manner as in Example 14. The developing solution used monoethanolamine in all of Examples 15 to 17, but in Examples 15 and 16,
The developer heated to 65 ° C. was used, and in Example 17, the developer heated to 60 ° C. was used. In addition, the number of coating rotations when coating the organic solvent solution of the photosensitive polyimide composition on the substrate was the number of coating rotations shown in Table 5 below.
上記のパターン形成及び加熱処理の結果を下記表−5に
示す。実施例15〜17の何れにおいても、シャープな端面
を持つ感光性ポリイミドのパターンが得られ、また400
℃迄の加熱処理を経てもパターンは変形、ぼやけ等が見
られず、良好な耐熱性を有していた。The results of the above pattern formation and heat treatment are shown in Table 5 below. In any of Examples 15 to 17, a photosensitive polyimide pattern having a sharp end face was obtained, and 400
The pattern did not show any deformation or blur even after heat treatment up to ℃, and had good heat resistance.
尚、実施例2〜5及び実施例10〜13でグレースケール法
により感度を測定した系においても、テストマスクを用
い、30〜50mJ露光し、それぞれのグレースケール法の現
像条件で現像したところ、実施例14〜17と同程度の解像
度でパターン形成がなされた。また、これらのパターン
は実施例14と同様に400℃迄の加熱処理を行ったとこ
ろ、実施例14〜17と同程度の膜厚変化であり、またパタ
ーンの変形、ぼやけ等は観察されなかった。これに対
し、比較例1及び2においては、何れも、ポリイミド膜
の現像が不可能でパターンを得ることができなかった。In the systems whose sensitivity was measured by the gray scale method in Examples 2 to 5 and Examples 10 to 13, exposure to 30 to 50 mJ was performed using a test mask, and development was performed under the respective development conditions of the gray scale method. A pattern was formed with the same resolution as in Examples 14 to 17. When these patterns were subjected to a heat treatment up to 400 ° C. in the same manner as in Example 14, the film thickness was changed to the same extent as in Examples 14 to 17, and no pattern deformation or blurring was observed. . On the other hand, in Comparative Examples 1 and 2, the pattern could not be obtained because the polyimide film could not be developed.
従来法においては、ポリイミド膜の露光に100mJ/cm2以
上の露光量を要したのに比べ、下記表−5に示す結果か
ら明らかなように、本発明の方法によれば、30〜50mJ/c
m2という少ない露光量でパターンが得られ、また本発明
の方法により得られたパターンは、高温過程を経ても膜
厚変化が少なく、寸法安定性に優れることが判る。In the conventional method, the exposure of the polyimide film required an exposure amount of 100 mJ / cm 2 or more, as compared with the results shown in Table 5 below, according to the method of the present invention, 30 to 50 mJ / cm 2 c
It can be seen that a pattern can be obtained with a small exposure amount of m 2, and that the pattern obtained by the method of the present invention has little change in film thickness even after a high temperature process and is excellent in dimensional stability.
〔発明の効果〕 本発明の感光性ポリイミドのパターン形成方法によれ
ば、耐熱性及び寸法安定性に優れると共に電気的及び機
械的性質にも優れたポリイミドのパターンを高精度を鮮
明に且つ容易に形成することができる。 EFFECT OF THE INVENTION According to the method for forming a photosensitive polyimide pattern of the present invention, a polyimide pattern having excellent heat resistance and dimensional stability as well as excellent electrical and mechanical properties can be clearly and easily formed with high accuracy. Can be formed.
Claims (1)
アミン成分との重縮合物からなる有機溶媒可溶性の芳香
族ポリイミドと、芳香族アジド化合物とからなる、有機
溶媒可溶性の感光性ポリイミド組成物を用いてポリイミ
ド膜を形成し、該ポリイミド膜を、所定のパターン状に
露光後、下記1群の化合物群から選択される一種若しく
は二種以上の化合物からなる現像液、又は下記1群の化
合物群から選択される一種若しくは二種以上の化合物と
下記2群の化合物群から選択される一種若しくは二種以
上の化合物とからなる現像液で現像することを特徴とす
る感光性ポリイミドのパターン形成方法。 1群:モノエタノールアミン、ヒドラジン、 CnH2n+1-NH2(式中、nは3以上の整数を示す。)、NH2
-CnH2n-NH2(式中、nは2以上の整数を示す。) 2群:水、アルコール系化合物1. An organic solvent-soluble photosensitive polyimide composition comprising an organic solvent-soluble aromatic polyimide composed of a polycondensate of a biphenyltetracarboxylic acid component and an organic diamine component and an aromatic azide compound is used. After forming a polyimide film and exposing the polyimide film in a predetermined pattern, a developer composed of one or more compounds selected from the compound group of the following one group, or selected from the compound group of the following one group A method for forming a pattern of a photosensitive polyimide, which comprises developing with a developer comprising one or more compounds selected from the group consisting of two or more compounds and one or more compounds selected from the following two groups of compounds. Group 1: monoethanolamine, hydrazine, (. Shown in the formula, n 3 or more integer) C n H 2n + 1 -NH 2, NH 2
(Wherein, n represents an integer of 2 or more.) -C n H 2n -NH 2 2 group: water, alcohol compounds
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61143742A JPH0721642B2 (en) | 1986-06-19 | 1986-06-19 | Method for forming pattern of photosensitive polyimide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61143742A JPH0721642B2 (en) | 1986-06-19 | 1986-06-19 | Method for forming pattern of photosensitive polyimide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62299846A JPS62299846A (en) | 1987-12-26 |
| JPH0721642B2 true JPH0721642B2 (en) | 1995-03-08 |
Family
ID=15345959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61143742A Expired - Lifetime JPH0721642B2 (en) | 1986-06-19 | 1986-06-19 | Method for forming pattern of photosensitive polyimide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0721642B2 (en) |
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| US7648815B2 (en) * | 2000-09-12 | 2010-01-19 | Pi R&D Co., Ltd. | Negative photosensitive polyimide composition and method for forming image the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4093461A (en) * | 1975-07-18 | 1978-06-06 | Gaf Corporation | Positive working thermally stable photoresist composition, article and method of using |
| JPS60134236A (en) * | 1983-12-23 | 1985-07-17 | Hitachi Ltd | Formation of fine pattern |
-
1986
- 1986-06-19 JP JP61143742A patent/JPH0721642B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62299846A (en) | 1987-12-26 |
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