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JPH0727091B2 - Optical element manufacturing method - Google Patents
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JPH0727091B2 - Optical element manufacturing method - Google Patents

Optical element manufacturing method

Info

Publication number
JPH0727091B2
JPH0727091B2 JP61306958A JP30695886A JPH0727091B2 JP H0727091 B2 JPH0727091 B2 JP H0727091B2 JP 61306958 A JP61306958 A JP 61306958A JP 30695886 A JP30695886 A JP 30695886A JP H0727091 B2 JPH0727091 B2 JP H0727091B2
Authority
JP
Japan
Prior art keywords
optical element
substrate
refractive index
high refractive
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61306958A
Other languages
Japanese (ja)
Other versions
JPS63158507A (en
Inventor
和久 山本
哲夫 谷内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP61306958A priority Critical patent/JPH0727091B2/en
Publication of JPS63158507A publication Critical patent/JPS63158507A/en
Publication of JPH0727091B2 publication Critical patent/JPH0727091B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • G02B6/124Geodesic lenses or integrated gratings
    • G02B6/1245Geodesic lenses

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明はコヒーレント光を使用する光情報処理分野ある
いは光通信、光応用計測制御分野に使用されるジオデシ
ックレンズなどの光素子の製造方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical element such as a geodesic lens used in the field of optical information processing using coherent light, the field of optical communication, or the field of measurement and control of optical application. .

従来の技術 従来、LiNbO3にジオデシックレンズを作製する方法とし
てNC旋盤による加工法がある。第3図に従来のジオデシ
ックレンズの製造方法の工程図を示す。第2図aで1は
LiNbO3基板である。このLiNbO3基板10にNC旋盤により半
径100μm、最深さ10μmの円形の加工を行ない凹部11
を形成する。次に第2図bでTi拡散を行い光導波層を形
成する。Ti拡散は300Å程度のTiを1000℃、6時間行い
厚み3〜5μmの光導波層12を形成する。13の部分がジ
オデシックレンズ部分である。第3図にジオデシックレ
ンズの斜視図を示す。14はHe−Neレーザ光で波長は0.63
3μmであり端面より光導波層12に導いた。このHe−Ne
レーザ光14はジオデシックレンズ13により集光される。
Conventional Technology Conventionally, as a method for producing a geodesic lens on LiNbO 3 , there is a processing method using an NC lathe. FIG. 3 shows a process diagram of a conventional method for manufacturing a geodesic lens. 1 in Figure 2a
It is a LiNbO 3 substrate. This LiNbO 3 substrate 10 was machined into a circular shape with a radius of 100 μm and a maximum depth of 10 μm by an NC lathe, and the recess 11 was formed.
To form. Next, in FIG. 2B, Ti diffusion is performed to form an optical waveguide layer. The Ti diffusion is performed by applying Ti of about 300Å at 1000 ° C. for 6 hours to form the optical waveguide layer 12 having a thickness of 3 to 5 μm. 13 is the geodesic lens part. FIG. 3 shows a perspective view of the geodesic lens. 14 is a He-Ne laser beam with a wavelength of 0.63
It was 3 μm, and was guided to the optical waveguide layer 12 from the end face. This He-Ne
The laser light 14 is condensed by the geodesic lens 13.

発明が解決しようとする問題点 上記のような従来の製造方法ではジオデシックレンズ一
つ一つを旋盤により加工を行うため量産性の点で非常に
問題となっていた。
Problems to be Solved by the Invention In the conventional manufacturing method as described above, since each geodesic lens is processed by a lathe, mass production is a serious problem.

問題点を解決するための手段 本発明は上記問題点を解決するためLiNbxTa(1-x)O3(0
≦x≦1)基板の表面の一部分に、燐酸またはピロ燐酸
を主成分とする酸を塗布する工程と、前記基板を熱処理
し、前記燐酸またはピロ燐酸の直下の基板中に高屈折率
部を形成する工程と、前記高屈折率部をアニールして、
前記高屈折率部を拡大させる工程と、前記拡大した高屈
折率部を除去する工程とを有する。
Means for Solving the Problems In order to solve the above problems, the present invention provides LiNbxTa (1- x ) O 3 (0
≦ x ≦ 1) A step of applying an acid containing phosphoric acid or pyrophosphoric acid as a main component to a part of the surface of the substrate, heat treating the substrate, and forming a high refractive index portion in the substrate immediately below the phosphoric acid or pyrophosphoric acid. A step of forming and annealing the high refractive index portion,
There is a step of enlarging the high refractive index portion and a step of removing the enlarged high refractive index portion.

作用 本発明は上記手段により通常の半導体製造装置を用いて
簡単に光素子が製造でき大幅に量産性が向上する。
The present invention can easily manufacture an optical element by using the above-mentioned means by using an ordinary semiconductor manufacturing apparatus, and greatly improve mass productivity.

実施例 本発明の光素子の製造方法の第1の実施例を第1図に示
す。この第1の実施例では光素子としてジオデシックレ
ンズの製造方法について詳細に説明する。第1図aで1
はLiNbO3基板で方位としては+Z面を用いた。また2は
LiNbO3基板1〔LiNbxTa1-xO3,0≦X≦1〕上に塗布され
たピロ燐酸(H4P2O7)である。このピロ燐酸は融点が室
温以下であるため簡単に塗布でき、また0.1mg点滴され
たもので表面張力により丸くなっている。3は230℃、
1時間の熱処理によりプロトン交換が生じ、LiNbO3基板
1に形成された深さ1μmの高屈折率層である。次に第
1図bで3′は260℃、3時間のアニール処理により広
げられた深さ5μmの高屈折率層である。次に第1図c
でHF、30℃中で5時間エッチングを行い高屈折率層3′
を除去し凹部4を形成する。最後に再びピロ燐酸中での
熱処理(230℃,12分)を行い厚み0.5μmの光導波層5
を形成する。これにより凹部4はジオデシックレンズ6
となる。製造されたジオデシックレンズ6によりHe−Ne
レーザ光を3μmに集光できた。
EXAMPLE FIG. 1 shows a first example of the method for manufacturing an optical element of the present invention. In the first embodiment, a method of manufacturing a geodesic lens as an optical element will be described in detail. 1 in Figure 1a
Is a LiNbO 3 substrate and the + Z plane is used as the orientation. Also 2
It is pyrophosphoric acid (H 4 P 2 O 7 ) coated on a LiNbO 3 substrate 1 [LiNbxTa 1- xO 3 , 0 ≦ X ≦ 1]. This pyrophosphoric acid has a melting point below room temperature, so it can be easily applied, and 0.1 mg of it is drip-shaped, which makes it round due to surface tension. 3 is 230 ℃,
It is a high-refractive-index layer having a depth of 1 μm formed on the LiNbO 3 substrate 1 due to the occurrence of proton exchange by heat treatment for 1 hour. Next, in FIG. 1b, 3'denotes a high-refractive index layer having a depth of 5 .mu.m expanded by annealing at 260.degree. C. for 3 hours. Next, FIG. 1c
High refractive index layer 3'by etching in HF at 30 ° C for 5 hours
Are removed to form the concave portion 4. Finally, heat treatment (230 ° C, 12 minutes) in pyrophosphoric acid was performed again to form an optical waveguide layer 5 with a thickness of 0.5 μm.
To form. As a result, the concave portion 4 becomes the geodesic lens 6
Becomes He-Ne by the manufactured geodesic lens 6
The laser light could be condensed to 3 μm.

なお、本実施例では+Z板のLiNbO3を用いたが−Z板で
もプロトン交換時の化学損傷がなく使用できる。
In this example, the + Z plate LiNbO 3 was used, but the −Z plate can also be used without chemical damage during proton exchange.

また、本実施例ではピロ燐酸を用いたが、他の融点が90
℃以下であるステアリン酸等を用いた場合でも暖めなが
ら簡単に塗布できるため使用が可能である。
Although pyrophosphoric acid was used in this example, other melting points are 90%.
Even when stearic acid or the like having a temperature of ℃ or less is used, it can be applied because it can be easily applied while warming.

発明の効果 本発明の光素子の製造方法によれば通常の半導体装置を
用い簡単にジオデシックレンズなどの光素子が製造で
き、量産性が飛躍的に向上する。
EFFECTS OF THE INVENTION According to the method for manufacturing an optical element of the present invention, an optical element such as a geodesic lens can be easily manufactured using an ordinary semiconductor device, and mass productivity is dramatically improved.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の光素子の製造方法の工程図、第2図は
従来の光素子の製造方法の工程図、第3図は従来の光素
子の斜視図である。 1……LiNbO3基板、2……ピロ燐酸、3……高屈折率
層、6……ジオデシックレンズ。
FIG. 1 is a process diagram of a method for manufacturing an optical device of the present invention, FIG. 2 is a process diagram of a method for manufacturing a conventional optical device, and FIG. 3 is a perspective view of a conventional optical device. 1 ... LiNbO 3 substrate, 2 ... Pyrophosphoric acid, 3 ... High refractive index layer, 6 ... Geodesic lens.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】LiNbxTa(1-x)O3(0≦x≦1)基板の表面
の一部分に、燐酸またはピロ燐酸を主成分とする酸を塗
布する工程と、 前記基板を熱処理し、前記燐酸またはピロ燐酸の直下の
基板中に高屈折率部を形成する工程と、 前記高屈折率部をアニールして、前記高屈折率部を拡大
させる工程と、 前記拡大した高屈折率部を除去する工程と、 を有する光素子の製造方法。
1. A step of applying an acid containing phosphoric acid or pyrophosphoric acid as a main component to a part of the surface of a LiNbxTa (1- x ) O 3 (0 ≦ x ≦ 1) substrate, heat treating the substrate, Forming a high refractive index portion in the substrate directly under phosphoric acid or pyrophosphoric acid; annealing the high refractive index portion to expand the high refractive index portion; and removing the enlarged high refractive index portion And a method of manufacturing an optical element, comprising:
【請求項2】LiNbxTa(1-x)O3(0≦x≦1)基板が、+
z板または−z板である特許請求の範囲1項記載の光素
子の製造方法。
2. A LiNbxTa (1- x ) O 3 (0 ≦ x ≦ 1) substrate is +
The method for manufacturing an optical element according to claim 1, wherein the optical element is a z-plate or a -z-plate.
JP61306958A 1986-12-23 1986-12-23 Optical element manufacturing method Expired - Lifetime JPH0727091B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61306958A JPH0727091B2 (en) 1986-12-23 1986-12-23 Optical element manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61306958A JPH0727091B2 (en) 1986-12-23 1986-12-23 Optical element manufacturing method

Publications (2)

Publication Number Publication Date
JPS63158507A JPS63158507A (en) 1988-07-01
JPH0727091B2 true JPH0727091B2 (en) 1995-03-29

Family

ID=17963318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61306958A Expired - Lifetime JPH0727091B2 (en) 1986-12-23 1986-12-23 Optical element manufacturing method

Country Status (1)

Country Link
JP (1) JPH0727091B2 (en)

Also Published As

Publication number Publication date
JPS63158507A (en) 1988-07-01

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