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JPH0727657B2 - Optical disk drive light source drive - Google Patents
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JPH0727657B2 - Optical disk drive light source drive - Google Patents

Optical disk drive light source drive

Info

Publication number
JPH0727657B2
JPH0727657B2 JP57042760A JP4276082A JPH0727657B2 JP H0727657 B2 JPH0727657 B2 JP H0727657B2 JP 57042760 A JP57042760 A JP 57042760A JP 4276082 A JP4276082 A JP 4276082A JP H0727657 B2 JPH0727657 B2 JP H0727657B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
voltage
current
power source
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57042760A
Other languages
Japanese (ja)
Other versions
JPS58161157A (en
Inventor
和夫 ▲高▼杉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57042760A priority Critical patent/JPH0727657B2/en
Publication of JPS58161157A publication Critical patent/JPS58161157A/en
Publication of JPH0727657B2 publication Critical patent/JPH0727657B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/126Circuits, methods or arrangements for laser control or stabilisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/06825Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)

Description

【発明の詳細な説明】 本発明は半導体レーザの駆動回路に係り、とくに光デイ
スク装置において光源として用いる半導体レーザをサー
ジから保護する回路の改良に関するものである。
The present invention relates to a semiconductor laser drive circuit, and more particularly to an improvement of a circuit for protecting a semiconductor laser used as a light source in an optical disc device from surge.

第1図はリード,ライト可能な光デイスク装置に於ける
半導体レーザの駆動回路を示す。
FIG. 1 shows a semiconductor laser drive circuit in a readable / writable optical disk device.

半導体レーザ10は光学ヘツド1の一部に組込まれ、これ
にリード電流を供給する電流源3およびライト電流を供
給する電流源4の駆動回路が接続される。リード電流は
一定電流であるがライト電流はライト情報に対応したパ
ルス電流である。高速のパルス電流を供給するため、電
流源の代りに第2図に示すように、電圧源41と抵抗42の
直列回路に高速スイツチ素子43を用いライト情報に従つ
てスイツチ43をオン・オフする方法も実際上よく用いら
れる。第1図で11は半導体レーザ10の出力のモニタ用検
出器で、モニタ出力50から所定のリード,ライトパワに
なるようにリード,ライト電源3,4を制御する。53,54は
このための制御信号である。
The semiconductor laser 10 is incorporated in a part of the optical head 1, and drive circuits for a current source 3 for supplying a read current and a current source 4 for supplying a write current are connected to the semiconductor laser 10. The read current is a constant current, but the write current is a pulse current corresponding to the write information. In order to supply a high-speed pulse current, a high-speed switch element 43 is used in a series circuit of a voltage source 41 and a resistor 42 instead of the current source, and the switch 43 is turned on / off according to the write information, as shown in FIG. The method is also often used in practice. In FIG. 1, reference numeral 11 is a detector for monitoring the output of the semiconductor laser 10, and controls the read and write power sources 3 and 4 so that the monitor output 50 provides a predetermined read and write power. 53 and 54 are control signals for this purpose.

半導体レーザはダイオードとしての順方向に電流を流す
ことによりレーザ光を発生するものであるが、何らかの
原因で逆方向である値を越える電圧が印加されると素子
が破壊される。通常のダイオード等でも逆方向破壊はあ
るが、半導体レーザに於ては、上記の逆方向電圧に対す
る耐圧が非常に低い。すなわち通常のダイオードでは数
10〜数100ボルトの逆耐圧は容易に得られるが、半導体
レーザではこれが数ボルトである。従つて第1図、第2
図等の駆動回路に於て、電源のオンオフ時、あるいは他
の装置等からの影響により、リード回路30,ライト回路4
0の端子にブラスの電圧(サージ電圧)が生じ、この値
が上記逆耐圧を越えると、半導体レーザが破壊されると
いう問題がある。リード電源3,ライト電源4等の電源
に、10数ボルトの電源を用いると、この電源のオンオフ
時等に数ボルトのサージ、あるいはノイズ電圧を発生す
ることは容易に起りうる。さらに駆動回路の近くに機械
的接点があり電流をオンオフするような場合には数100
あるいは1000ボルトを越えるサージ電圧が発生し、回路
の漂遊容量を通じても、上記破壊電圧の発生は十分起り
うるものである。とくに半導体レーザは極めて高速応答
素子であるから、高速なサージ電圧にも十分応答(破
壊)するし、通常のサージ吸収素子を半導体レーザに並
列に接続したのでは、高速性のため保護素子より速く破
壊する恐れもある。また保護素子のもつ容量により本来
の機能である順方向ライト電流波形が劣化するなどの問
題がある。なお、保護ダイオードと半導体レーザとを逆
極性並列接続することにより、逆電圧印加の際の素子破
壊を防止する技術は、例えば、特開昭54−105990号に提
案されている。
Semiconductor lasers generate laser light by passing a current in the forward direction as a diode. However, if a voltage exceeding a certain value is applied in the reverse direction for some reason, the element is destroyed. Although a normal diode or the like also has a reverse breakdown, a semiconductor laser has a very low withstand voltage against the reverse voltage. That is, the number of normal diodes
A reverse breakdown voltage of 10 to several hundreds of volts can be easily obtained, but this is several volts in a semiconductor laser. Therefore, Fig. 1 and 2
In the drive circuit shown in the figure, the read circuit 30, the write circuit
A brass voltage (surge voltage) is generated at the 0 terminal, and if this value exceeds the reverse withstand voltage, there is a problem that the semiconductor laser is destroyed. If a power supply of 10 and a few volts is used as the power supply such as the read power supply 3 and the write power supply 4, a surge or noise voltage of a few volts can easily occur when the power supply is turned on and off. Furthermore, if there is a mechanical contact near the drive circuit to turn on / off the current, several hundreds
Alternatively, a surge voltage exceeding 1000 V is generated, and the above breakdown voltage can sufficiently occur even through stray capacitance of the circuit. In particular, the semiconductor laser is an extremely high-speed response element, so it responds (breaks) sufficiently to high-speed surge voltage, and if a normal surge absorption element is connected in parallel with the semiconductor laser, it is faster than the protection element because of its high speed. It may be destroyed. Further, there is a problem that the forward write current waveform, which is the original function, is deteriorated due to the capacity of the protection element. Incidentally, a technique for preventing element destruction at the time of applying a reverse voltage by connecting a protection diode and a semiconductor laser in parallel in reverse polarity has been proposed, for example, in JP-A-54-105990.

本発明は駆動回路あるいは附近の機器等からの電源オン
オフ時などに発生するサージにより半導体レーザに逆電
圧が加わり、破壊することを防止するようにした半導体
レージの駆動回路を得ることにある。
An object of the present invention is to provide a semiconductor rage drive circuit which prevents a semiconductor laser from being destroyed by a reverse voltage applied to it by a surge generated when the power is turned on or off from the drive circuit or a nearby device.

以下実施例により本発明を詳細に説明する。第3図は第
2図に対応した実施例を示す駆動回路図である。リード
電流源3はトランジスタ33,抵抗32,制御電流源34,電源3
1から成る。リード電流源の構成に制約はなく他の方式
あるいは構成でもよい。ライト電流源4は、電圧源41,
抵抗42,スイツチトランジスタ43から成る。トランジス
タ43はライト信号源45からドライバ(増幅器)44を経て
駆動され、ライト情報に対応してスイツチ43を制御す
る。ライト信号源45は、ライトデータを記録フオーマツ
トに従つて変調した信号を発生する。電源31,41は、入
力端子36,46から供給される電圧を安定化した出力を発
生する。入力36,46等へは、第4図の如き電源から供給
される。第4図で入力7は交流電源、70は電源スイッ
チ、6はトランスおよび整流回路等から成る電源回路で
出力60,61,62等を出す。電源回路6と電圧源31,41等は
同一の電源回路とすることもできる。レーザ出力は、モ
ニタ用検出器11で電流に変換し、抵抗51,増幅器5によ
りモニタ出力として制御電流源34,ライト電圧源41へ入
力され、それぞれリードパワおよびライトパラが所定の
値になるよう制御される。
The present invention is described in detail below with reference to examples. FIG. 3 is a drive circuit diagram showing an embodiment corresponding to FIG. The lead current source 3 is a transistor 33, a resistor 32, a control current source 34, a power source 3
Composed of 1. There are no restrictions on the configuration of the read current source, and other methods or configurations may be used. The write current source 4 includes a voltage source 41,
It consists of a resistor 42 and a switch transistor 43. The transistor 43 is driven from a write signal source 45 through a driver (amplifier) 44, and controls the switch 43 according to write information. The write signal source 45 generates a signal obtained by modulating the write data according to the recording format. The power supplies 31 and 41 generate outputs in which the voltages supplied from the input terminals 36 and 46 are stabilized. Inputs 36, 46, etc. are supplied from a power source as shown in FIG. In FIG. 4, an input 7 is an AC power supply, 70 is a power switch, 6 is a power supply circuit including a transformer and a rectifying circuit, and outputs 60, 61, 62 and the like are output. The power supply circuit 6 and the voltage sources 31 and 41 may be the same power supply circuit. The laser output is converted into a current by the monitor detector 11, and is input to the control current source 34 and the write voltage source 41 as a monitor output by the resistor 51 and the amplifier 5 so that the read power and the write parameter are controlled to predetermined values. It

このような半導体レーザ駆動回路に於て、リード電流路
30及びライト電流路40にそれぞれ高い逆方向耐圧を持つ
ダイオード300,400を順方向に入れ、かつ半導体レーザ1
0と並列に抵抗100を接続することが本発明の特徴であ
る。
In such a semiconductor laser drive circuit, the read current path
Diodes 300 and 400 each having a high reverse breakdown voltage are respectively inserted in the forward direction in the 30 and the write current path 40, and the semiconductor laser 1
It is a feature of the present invention that the resistor 100 is connected in parallel with 0.

このようにした本発明による駆動回路に於ては、装置の
電源をオンオフしたり、第4図の電源スイツチ70をオン
オフしたとき、電源31,41や、トランジスタ33,34の電極
等に、制御されないサージあるいはノイズ電圧が発生
し、電流路30,40の電位が半導体レーザ10に対して逆電
圧となるようになつたとしても、この電圧はダイオード
300,400の非常に大きな逆方向抵抗と、抵抗100で分割さ
れるから、レーザ10には破壊に至るようなサージは加わ
らない。抵抗100にはレーザ10に流れる電流をバイパス
する電流が流れるが、通常のレーザ電流に対し十分小さ
な値(0.1%程度)にしうるから、リート,ライト電流
への影響はない。一方ダイオード300,400には、100〜数
100ボルトの逆方向耐圧をもちかつ高速応答の素子は容
易に得られ、通常の動作時には悪影響を与えることはな
い。
In the drive circuit according to the present invention as described above, when the power source of the device is turned on and off, and the power source switch 70 of FIG. 4 is turned on and off, the power source 31, 41 and the electrodes of the transistors 33, 34 are controlled. Even if a surge or noise voltage that is not generated occurs and the potentials of the current paths 30 and 40 become reverse voltages with respect to the semiconductor laser 10, this voltage is
Since it is divided by the very large reverse resistance of 300,400 and the resistance 100, the laser 10 is not subjected to a surge that causes destruction. A current that bypasses the current flowing through the laser 10 flows through the resistor 100, but since it can be set to a sufficiently small value (about 0.1%) with respect to the normal laser current, there is no effect on the read and write currents. On the other hand, the diodes 300 and 400 have 100 to several
A device having a reverse breakdown voltage of 100 V and a high-speed response can be easily obtained, and does not adversely affect the normal operation.

以上説明した如く本発明によれば、電源のオンオフや他
の機器からの制御できないサージ電圧やノイズ電圧によ
り、半導体レーザに逆方向の電圧が加わることを防止
し、これらサージによる破壊をなくすことができる。と
くに装置で使われる種々の電源や、そのオンオフの順序
あるいはオンオフの速度等に対する条件は不要であり、
サージやノイズの他、瞬時の停電や電源異常等、制御で
きない原因に対しても十分保護の効果が得られ実用上極
めて有用である。
As described above, according to the present invention, it is possible to prevent the reverse voltage from being applied to the semiconductor laser due to the on / off of the power supply or the uncontrollable surge voltage or noise voltage from other devices, and to eliminate the damage due to these surges. it can. In particular, various power supplies used in the device, conditions for the on / off sequence, on / off speed, etc. are unnecessary.
In addition to surges and noises, the effect of sufficient protection is obtained against uncontrollable causes such as momentary power failure and power failure, which is extremely useful in practice.

【図面の簡単な説明】[Brief description of drawings]

第1図および第2図は光デイスクに於ける半導体レーザ
の駆動回路を示す図、第3図は本発明による半導体レー
ザ駆動回路の実施例を示す図、第4図は第3図における
電源の例を示す図である。
1 and 2 are diagrams showing a semiconductor laser drive circuit in an optical disk, FIG. 3 is a diagram showing an embodiment of a semiconductor laser drive circuit according to the present invention, and FIG. 4 is a diagram showing the power supply in FIG. It is a figure which shows an example.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】半導体レーザと、該半導体レーザを駆動
し、内部抵抗を有する記録用電源及び再生用電源と、上
記半導体レーザと並列に接続された抵抗と、上記記録用
電源からの電流を制御する機械的接点を有する半導体レ
ーザ駆動装置において、上記半導体レーザと上記抵抗と
の接続点と上記記録用電源との間、及び上記接続点と上
記再生用電源との間にそれぞれ配列された順方向のダイ
オードを有し、上記記録用電源又は上記再生用電源の電
位が上記半導体レーザに対して逆電圧となった場合に、
上記ダイオードの逆方向抵抗と上記抵抗と上記内部抵抗
とで上記逆電圧を分割することを特徴とする光ディスク
装置の光源駆動装置。
1. A semiconductor laser, a recording power source and a reproducing power source which drive the semiconductor laser and have internal resistance, a resistor connected in parallel with the semiconductor laser, and a current from the recording power source. In a semiconductor laser driving device having a mechanical contact, a forward direction arranged between a connection point between the semiconductor laser and the resistor and the recording power supply, and between the connection point and the reproduction power supply. When the potential of the recording power source or the reproducing power source has a reverse voltage with respect to the semiconductor laser,
A light source drive device for an optical disk device, wherein the reverse voltage is divided by the reverse resistance of the diode, the resistance, and the internal resistance.
JP57042760A 1982-03-19 1982-03-19 Optical disk drive light source drive Expired - Lifetime JPH0727657B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57042760A JPH0727657B2 (en) 1982-03-19 1982-03-19 Optical disk drive light source drive

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57042760A JPH0727657B2 (en) 1982-03-19 1982-03-19 Optical disk drive light source drive

Publications (2)

Publication Number Publication Date
JPS58161157A JPS58161157A (en) 1983-09-24
JPH0727657B2 true JPH0727657B2 (en) 1995-03-29

Family

ID=12644934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57042760A Expired - Lifetime JPH0727657B2 (en) 1982-03-19 1982-03-19 Optical disk drive light source drive

Country Status (1)

Country Link
JP (1) JPH0727657B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61265883A (en) * 1985-05-20 1986-11-25 Olympus Optical Co Ltd Semiconductor laser driving device
EP3285383A1 (en) * 2016-08-15 2018-02-21 ABB Technology Oy Current conductor structure with frequency-dependent resistance

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381097A (en) * 1976-12-27 1978-07-18 Hitachi Ltd Semiconductor laser device
JPS55143079A (en) * 1979-04-26 1980-11-08 Matsushita Electric Works Ltd Luminous source device with light emitting element
JPS56112766A (en) * 1980-02-08 1981-09-05 Toshiba Corp Semiconductor light emitting device

Also Published As

Publication number Publication date
JPS58161157A (en) 1983-09-24

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