JPH0727870B2 - Low pressure vapor deposition method - Google Patents
Low pressure vapor deposition methodInfo
- Publication number
- JPH0727870B2 JPH0727870B2 JP62325517A JP32551787A JPH0727870B2 JP H0727870 B2 JPH0727870 B2 JP H0727870B2 JP 62325517 A JP62325517 A JP 62325517A JP 32551787 A JP32551787 A JP 32551787A JP H0727870 B2 JPH0727870 B2 JP H0727870B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- ring
- reaction tube
- pressure vapor
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 5
- 238000007740 vapor deposition Methods 0.000 title description 2
- 238000001947 vapour-phase growth Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 239000012495 reaction gas Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 49
- 239000010408 film Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 206010053759 Growth retardation Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Description
【発明の詳細な説明】 「産業上の利用分野」 本発明は、半導体製造過程に於いて基板ウェハー上に窒
化膜（Si3N4）、低温酸化膜（LTO）、高温酸化膜（HT
O）、リンガラス（PSG）、ボロンリンガラス（BPSG）、
高融点金属（リフラクトリメタル）、メタルシリサイ
ド、Si−−Geエピタキシャル成長、III−Ｖ族、II−IV
族化合物エピタキシャル成長、等を均一に成長させ半導
体デバイスに使用できるようにした減圧気相成長方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION “Industrial field of application” The present invention relates to a nitride film (Si 3 N 4 ), a low temperature oxide film (LTO), and a high temperature oxide film (HT) on a substrate wafer in a semiconductor manufacturing process.
O), phosphorus glass (PSG), boron phosphorus glass (BPSG),
Refractory metal, refractory metal, metal silicide, Si-Ge epitaxial growth, III-V group, II-IV
TECHNICAL FIELD The present invention relates to a low pressure vapor phase growth method for uniformly growing group compound epitaxial growth and the like for use in semiconductor devices.
「従来技術及びその問題点」 一般に、半導体製造過程に於いて基板ウェハー上に前記
酸化膜や窒化膜を成長させるのに減圧気相成長装置が使
用されている。このような減圧気相成長装置としては、
第３図に示すように、水平方向に配置した細長い反応管
１の外側にヒータ２を配設し、反応管１内に、多数の基
板ウェハー３をウェハーボート４に多数立設し、反応管
接続フランジのガス導入口５からガスを矢印で示すよう
に流動させて、排出口６からガスを排出させる横型減圧
気相成長装置と、第４図に示すように、垂直方向に配置
した反応管１′の外側にヒータ２′を配設し、反応管
１′内に多数の基板ウェハー３′をウェハーボート４′
に多数水平装着し、反応管上部若しくは下部の導入口
５′からガスを矢印で示すように流動させて排出口６′
からガスを排出させる縦型減圧気相成長装置が知られて
いる。これら従来の気相成長装置で特にシラン（SiH4）
ガスを使用し酸化膜や窒化膜の薄膜を成長させた場合、
ウェハーのエッジ部分が厚くなり、膜厚を均一にするこ
とが困難であった。このような欠点を解消するため、ボ
ートを多数の孔を穿設した円筒状に形成することが行な
われている。しかして、この円筒状のボート（商品名で
ケージボートと呼ばれている。）は、二つ割に形成され
ており、ウェハーを出し入れするのにこのボートを二つ
に開き、ウェハーを１枚々ピンセットで挟んで行ってい
るが、この方法だと作業能率が悪く、自動化も不可であ
り、しかもボートを開く際にゴミが発生して、ウェハー
に付着する等の問題があった。"Prior Art and its Problems" Generally, a reduced pressure vapor phase growth apparatus is used to grow the oxide film or the nitride film on a substrate wafer in a semiconductor manufacturing process. As such a reduced pressure vapor phase growth apparatus,
As shown in FIG. 3, a heater 2 is arranged outside a horizontally elongated reaction tube 1, and a large number of substrate wafers 3 are erected in a wafer boat 4 inside the reaction tube 1 to form a reaction tube. A horizontal depressurization vapor phase growth apparatus for causing gas to flow from the gas introduction port 5 of the connection flange as shown by an arrow and discharging the gas from the discharge port 6, and a reaction tube arranged vertically as shown in FIG. A heater 2'is provided outside the 1 ', and a large number of substrate wafers 3'are placed in the reaction tube 1'and a wafer boat 4'.
A number of them are horizontally mounted on the reaction tube, and gas is made to flow from the inlet 5'in the upper or lower part of the reaction tube as shown by the arrow to discharge the gas 6 '
There is known a vertical type reduced pressure vapor phase growth apparatus for discharging a gas from the above. With these conventional vapor phase growth equipment, especially silane (SiH 4 )
When a thin film of oxide film or nitride film is grown using gas,
The edge portion of the wafer becomes thick and it is difficult to make the film thickness uniform. In order to eliminate such a drawback, the boat is formed into a cylindrical shape having a large number of holes. Then, this cylindrical boat (which is called a cage boat in the product name) is formed in half, and this boat is opened in two for loading and unloading wafers, and one wafer is used. Although they are sandwiched with tweezers, this method has a problem in that work efficiency is poor, automation is impossible, and dust is generated when the boat is opened and adheres to the wafer.
この発明はこのような問題点を一挙に解消しようとする
ものであり、ウェハー上に均一な膜厚を形成し得るよう
にし、しかも自動化をも可能とした減圧気相成長方法を
提供することを目的とする。The present invention is intended to solve such problems all at once, and to provide a reduced pressure vapor deposition method capable of forming a uniform film thickness on a wafer and also enabling automation. To aim.
「問題点を解決するための手段」 上記目的に沿う本発明の構成は、反応管の内部に複数の
支柱を有する治具を内装し、該支柱に、上面に間隔づけ
て複数のウェハー支持用突起を形成し且つウェハーのオ
リエンテーションフラット部に合わせた直線部が形成さ
れた耐熱性リング状治具を多数固定し、オリエンテーシ
ョンフラット部を有する基板ウェハーを前記リング状治
具のウェハー支持用突起で支持し、その際基板ウェハー
裏面が前記ウェハー支持用突起に当接し、基板ウェハー
表面の成長面が隣接する前記リング状治具に間隔づけて
面するようにし、前記反応管外側を加熱しながら、反応
管内に反応ガスを導入し、反応管内でウェハー上に均一
に気相成長させることを要旨とする。"Means for Solving Problems" According to the configuration of the present invention in accordance with the above-mentioned object, a jig having a plurality of columns is internally provided in a reaction tube, and the columns are provided for supporting a plurality of wafers at intervals on the upper surface. A large number of heat-resistant ring-shaped jigs that form protrusions and have straight portions that match the orientation flats of the wafer are fixed, and substrate wafers with orientation flats are supported by the wafer-supporting protrusions of the ring-shaped jigs. At that time, the back surface of the substrate wafer is brought into contact with the wafer supporting protrusions so that the growth surface of the substrate wafer surface faces the adjacent ring-shaped jig at an interval, and the reaction is performed while heating the outside of the reaction tube. The gist is to introduce a reaction gas into the tube and uniformly vapor-phase grow on the wafer in the reaction tube.
本発明の効果の原因は、理論的に十分解明されているわ
けではないが、いずれにしろ従来の方法ではガスがウェ
ハー上中央に均一に拡散せず、そのためウェハーのエッ
ジ部分が厚くなったウェハーが得られていたのに対し、
基板ウェハーをリング状治具に間隔づけて面するように
することによって、エッジ部分の膜の成長が抑制され、
そのためウェハー上に均一な薄膜が形成される。The cause of the effect of the present invention is not fully understood theoretically, but in any case, in the conventional method, the gas is not uniformly diffused in the center of the wafer, so that the edge portion of the wafer becomes thicker. Was obtained, while
By arranging the substrate wafer to face the ring-shaped jig at intervals, the growth of the film at the edge portion is suppressed,
Therefore, a uniform thin film is formed on the wafer.
「実施例」 以下に、この発明の望ましい実施例を図面を参照しなが
ら説明する。"Embodiment" Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings.
第１図は、縦型減圧気相成長装置に適用する場合の側面
図であり、支柱11に固定されたリング状治具13のウェハ
ー支持用突起16上に、ウェハー14が載置されている。こ
の場合ウェハーボートは回転可能となっている。FIG. 1 is a side view when applied to a vertical reduced pressure vapor phase growth apparatus, in which a wafer 14 is placed on a wafer supporting protrusion 16 of a ring-shaped jig 13 fixed to a column 11. . In this case, the wafer boat is rotatable.
本発明に使用するリング状治具の材質は、耐熱性であれ
ば特に限定されないが、例えば炭化ケイソ（SiC）、ア
ルミナ(Al2O3)、セラミック、石英等の耐熱性材料が好
適に使用される。The material of the ring-shaped jig used in the present invention is not particularly limited as long as it is heat resistant, but for example, heat resistant materials such as carbonized diatomaceous (SiC), alumina (Al 2 O 3 ), ceramics and quartz are preferably used. To be done.
第２図は本発明のリング状治具の斜視図を示すものであ
り、リング状治具13は、中央が開口した略円形に形成さ
れ、上面には、ウェハー支持用突起16が形成された例を
示す。FIG. 2 is a perspective view of a ring-shaped jig of the present invention. The ring-shaped jig 13 is formed in a substantially circular shape with an opening in the center, and a wafer supporting protrusion 16 is formed on the upper surface. Here is an example:
このようにウェハー支持用突起16を形成させると、ウェ
ハー成長部中央は、ウェハー支持用突起によって隣接す
るウェハーと外周部のリング状治具との間隔より、広い
間隔で対向しているので、ウェハー外周部に比べて膜の
成長の抑制度合が少なくなるので、極端に周辺部が厚く
なる膜形成のときに使用しても、ウェハー上に均一な薄
膜を形成することができる。そればかりかウェハーとリ
ング状治具との間に隙間が形成されるので、その隙間に
薄い板状物を挿入し、ウェハーを真空吸着させて出し入
れすることができる。従って、ウェハーの出し入れを自
動化によって行うことができる。尚、上記リング状治具
の一端17は平坦に形成されているが、これは、ウェハー
の結晶軸を示すオリエンテーションフラットの部分に合
わせるためであり、このようにすることによりオリエン
テーションフラットの部分も均一な成長膜が形成され
る。尚、ウェハーを載せる真空吸着のための薄板は、リ
ング状治具の一端17の平坦部若しくはその逆側から出し
入れし、ウェハーを出し入れする。When the wafer supporting protrusions 16 are formed in this way, the center of the wafer growth portion is opposed to the wafer adjacent to the wafer supporting protrusions at a distance wider than the distance between the adjacent wafer and the ring-shaped jig on the outer peripheral portion. Since the degree of suppression of film growth is smaller than that of the outer peripheral portion, a uniform thin film can be formed on the wafer even when the film is used for forming a film having an extremely thick peripheral portion. Not only that, since a gap is formed between the wafer and the ring-shaped jig, a thin plate-like object can be inserted into the gap and the wafer can be vacuum-sucked in and taken out. Therefore, the wafer can be loaded and unloaded automatically. The one end 17 of the ring-shaped jig is formed flat, but this is to match the orientation flat portion showing the crystal axis of the wafer, and by doing so, the orientation flat portion is also uniform. Growth film is formed. The thin plate for vacuum suction on which the wafer is placed is taken in and out from the flat part of the one end 17 of the ring-shaped jig or the opposite side thereof, and the wafer is taken in and out.
「発明の効果」 以上述べた如く本発明によるときは、ウェハー表面外周
部はリング状治具に間隔づけて面して気相成長させるよ
うになっているので、ウェハーのエッジ部分の成長が抑
制されると共に、ウェハー成長部中央は、ウェハー支持
用突起によって隣接するウェハーと外周部のリング状治
具とよりは、広い間隔で対向しているので、ウェハー外
周部に比べて成長の抑制度合が少なくなるから、極端に
周辺部が厚くなる膜形成のときに使用してもウェハー上
に均一な薄膜を形成されることができる。また、リング
状治具の上面にウェハー支持用突起を形成しているの
で、ウェハーの出し入れを自動化によって行うことがで
き、生産性が向上する。更に、リング状治具の一端は、
平坦に形成されているので、ウェハーのオリエンテーシ
ョンフラット部分も均一な膜が形成される。[Advantages of the Invention] As described above, according to the present invention, the outer peripheral portion of the wafer surface is arranged to face the ring-shaped jig so as to be vapor-phase grown, so that the growth of the edge portion of the wafer is suppressed. At the same time, the center of the wafer growth portion is opposed to the adjacent wafer by the wafer supporting protrusion with a wider distance than the ring-shaped jig on the outer peripheral portion, so that the growth suppression degree is smaller than that of the wafer outer peripheral portion. Since the amount is small, a uniform thin film can be formed on the wafer even when it is used for forming a film whose peripheral portion is extremely thick. Further, since the wafer supporting protrusion is formed on the upper surface of the ring-shaped jig, the wafer can be automatically taken in and out, and the productivity is improved. Furthermore, one end of the ring-shaped jig is
Since it is formed flat, a uniform film is also formed on the orientation flat portion of the wafer.
第１図は、縦型減圧気相成長装置に適用する場合の本発
明の実施例を示す側面図、 第２図は、本発明に使用するリング状治具の実施例を示
す斜視図、 」を加入する。 第３図は、従来の縦型減圧気相成長装置を示す断面図、 第４図は、従来の横型減圧気相成長装置を示す断面図で
ある。 図中、 11……支柱、13……リング状治具、14……ウェハー。FIG. 1 is a side view showing an embodiment of the present invention when applied to a vertical reduced pressure vapor phase growth apparatus, and FIG. 2 is a perspective view showing an embodiment of a ring-shaped jig used in the present invention. Join. FIG. 3 is a sectional view showing a conventional vertical reduced pressure vapor phase growth apparatus, and FIG. 4 is a sectional view showing a conventional horizontal reduced pressure vapor phase growth apparatus. In the figure, 11 ... Support, 13 ... Ring jig, 14 ... Wafer.
Claims (1)
内装し、該支柱に、上面に間隔づけて複数のウェハー支
持用突起を形成し且つウェハーのオリエンテーションフ
ラット部に合わせた直線部が形成された耐熱性リング状
治具を多数固定し、オリエンテーションフラット部を有
する基板ウェハーを前記リング状治具のウェハー支持用
突起で支持し、その際基板ウェハー裏面が前記ウェハー
支持用突起に当接し、基板ウェハー表面の成長面が隣接
する前記リング状治具に間隔づけて面するようにし、前
記反応管外側を加熱しながら、反応管内に反応ガスを導
入し、反応管内でウェハー上に均一に気相成長させるこ
とを特徴とする減圧気相成長方法。1. A linear portion in which a jig having a plurality of struts is internally provided in a reaction tube, and a plurality of wafer supporting protrusions are formed at intervals on the upper surface of the struts and aligned with a wafer orientation flat portion. A large number of heat-resistant ring-shaped jigs formed with are fixed, and the substrate wafer having an orientation flat portion is supported by the wafer-supporting projections of the ring-shaped jig, with the back surface of the substrate wafer touching the wafer-supporting projections. In contact with each other so that the growth surface of the substrate wafer surface faces the adjacent ring-shaped jig with a space therebetween, and while the outside of the reaction tube is being heated, a reaction gas is introduced into the reaction tube, and is uniformly distributed on the wafer in the reaction tube. 1. A reduced pressure vapor phase growth method, characterized in that vapor phase growth is performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62325517A JPH0727870B2 (en) | 1987-12-24 | 1987-12-24 | Low pressure vapor deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62325517A JPH0727870B2 (en) | 1987-12-24 | 1987-12-24 | Low pressure vapor deposition method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01168030A JPH01168030A (en) | 1989-07-03 |
| JPH0727870B2 true JPH0727870B2 (en) | 1995-03-29 |
Family
ID=18177760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62325517A Expired - Lifetime JPH0727870B2 (en) | 1987-12-24 | 1987-12-24 | Low pressure vapor deposition method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0727870B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0622980Y2 (en) * | 1988-09-28 | 1994-06-15 | 日本エー・エス・エム株式会社 | Substrate support device in CVD device |
| US5169453A (en) * | 1989-03-20 | 1992-12-08 | Toyoko Kagaku Co., Ltd. | Wafer supporting jig and a decompressed gas phase growth method using such a jig |
| JPH06818Y2 (en) * | 1989-09-21 | 1994-01-05 | 日本エー・エス・エム株式会社 | Substrate support apparatus for CVD apparatus |
| US5192371A (en) * | 1991-05-21 | 1993-03-09 | Asm Japan K.K. | Substrate supporting apparatus for a CVD apparatus |
| JP6469046B2 (en) * | 2016-07-15 | 2019-02-13 | クアーズテック株式会社 | Vertical wafer boat |
| JP7236947B2 (en) * | 2019-07-11 | 2023-03-10 | 三菱電機株式会社 | Manufacturing method of SiC semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5742174Y2 (en) * | 1978-07-28 | 1982-09-17 | ||
| JPS58169906A (en) * | 1982-01-18 | 1983-10-06 | Nec Corp | Vapor growth device |
-
1987
- 1987-12-24 JP JP62325517A patent/JPH0727870B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01168030A (en) | 1989-07-03 |
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