JPH0727983B2 - Method for manufacturing glass substrate for semiconductor - Google Patents
Method for manufacturing glass substrate for semiconductorInfo
- Publication number
- JPH0727983B2 JPH0727983B2 JP62285243A JP28524387A JPH0727983B2 JP H0727983 B2 JPH0727983 B2 JP H0727983B2 JP 62285243 A JP62285243 A JP 62285243A JP 28524387 A JP28524387 A JP 28524387A JP H0727983 B2 JPH0727983 B2 JP H0727983B2
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- semiconductor
- groove
- rectangular
- rectangular groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 38
- 239000011521 glass Substances 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000010409 thin film Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 6
- 150000002902 organometallic compounds Chemical class 0.000 claims description 5
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 4
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Landscapes
- Glass Melting And Manufacturing (AREA)
- Recrystallisation Techniques (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、半導体デバイスを形成するための半導体膜を
被覆形成する半導体素子用ガラス基板の製造方法に関
し、特に結晶面の単一な半導体膜を形成しうる半導体素
子用ガラス基板の製造方法に関する。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing a glass substrate for a semiconductor element, which is formed by coating a semiconductor film for forming a semiconductor device, and particularly to a semiconductor film having a single crystal plane. The present invention relates to a method for manufacturing a glass substrate for a semiconductor element capable of forming a glass.
［従来の技術］ 従来から、ガラス基板上に結晶面の単一な半導体膜を形
成する方法として、ガラス基板上に形成した溝の形状を
用いるグラフォエピタキシ法が知られている。第２図に
グラフォエピタキシ法で用いられている従来のガラス基
板を示す。該ガラス基板は、ガラス基板１の主要部表面
に矩型の溝２をドライエッチング法等を用いて作成した
ものであり、溝２の形状として矩形を用いた場合には、
（100）面の半導体膜が、溝２の角部３を結晶核として
垂直方向にグラフォエピタキシャル成長することが知ら
れている。（例えばAppl.Phys.Lett.35.71（1979）） ［発明が解決しようとする問題点］ 上記グラフォエピタキシャル成長においては、成長する
結晶の方向性が該角部３の方向性により影響され、良好
な特性を示す半導体膜を成長させるためには、該角部３
は正確な矩形角部を形成している必要があった。[Prior Art] Conventionally, as a method for forming a semiconductor film having a single crystal plane on a glass substrate, a graphoepitaxy method using a shape of a groove formed on the glass substrate has been known. FIG. 2 shows a conventional glass substrate used in the graphoepitaxy method. The glass substrate is one in which a rectangular groove 2 is formed on the surface of a main part of the glass substrate 1 by using a dry etching method or the like. When a rectangular groove 2 is used,
It is known that a (100) plane semiconductor film is graphoepitaxially grown in the vertical direction with the corner 3 of the groove 2 as a crystal nucleus. (For example, Appl.Phys.Lett. 35 .71 (1979)) [Problems to be solved by the invention] In the above graphoepitaxial growth, the directionality of the growing crystal is influenced by the directionality of the corner portion 3, In order to grow a semiconductor film having good characteristics, the corner portion 3
Had to form precise rectangular corners.
しかしながら、従来の半導体素子用ガラス基板において
は、該溝の作成方法（ドライエッチング法）との関係
で、該溝２はＵ字型の溝であり、該半導体素子用ガラス
基板上に単一な結晶面を有する半導体膜を成長させるこ
とができなかった。このことは、高速動作の半導体デバ
イス作成上、１つの問題点となっていた。However, in the conventional glass substrate for a semiconductor element, the groove 2 is a U-shaped groove in relation to the method of forming the groove (dry etching method), and a single groove is formed on the glass substrate for a semiconductor element. It was not possible to grow a semiconductor film having a crystal plane. This has been a problem in producing a high-speed operation semiconductor device.
［問題点を解決するための手段］ 本発明は、上記問題点を解決するためになされたもので
あって、ガラス基板の主要部表面に多数の矩形溝が設け
られた半導体素子用ガラス基板において、該矩形溝の底
面に、該底面と該矩形溝の側面との境界の角部を覆うよ
うな厚みの表面平坦な薄膜を設けている。[Means for Solving Problems] The present invention has been made to solve the above problems, and provides a glass substrate for a semiconductor device in which a large number of rectangular grooves are provided on the surface of the main part of the glass substrate. On the bottom surface of the rectangular groove, a thin film having a flat surface is provided so as to cover the corner portion of the boundary between the bottom surface and the side surface of the rectangular groove.
本発明によれば、通常のエッチングにより生じた、Ｕ型
溝の底部の曲面部分を薄膜がうめつくし、該溝の形状を
矩形により近い形へと修正している。該薄膜の膜厚は1n
m〜１μｍの厚さであることが好ましく、1nmより薄いと
薄膜によりうずめられる曲線部分が少なくなるため本発
明の効果が現れにくい。又１μｍより厚いと該薄膜作成
の生産性が悪くなったり、当初の溝を深くエッチングし
なければならない等の問題を生じやすくなる。薄膜被覆
で矩形により近い形に修正された溝は、従来の矩形溝と
同様幅0.01μｍ〜１μｍ、深さ3nm〜１μｍの溝となっ
ていることがグラフォエピタキシャルの面で好ましく、
又0.01μｍ〜１μｍの間隔でガラス表面に設けられてい
ることが好ましい。According to the present invention, the thin film fills the curved surface of the bottom portion of the U-shaped groove, which is generated by ordinary etching, and the shape of the groove is corrected to a shape closer to a rectangle. The thickness of the thin film is 1n
The thickness is preferably m to 1 μm, and if the thickness is less than 1 nm, the curved portion swollen by the thin film is reduced, so that the effect of the present invention is hard to appear. On the other hand, if the thickness is more than 1 μm, the productivity of forming the thin film is deteriorated, and problems such as the necessity of deeply etching the initial groove are likely to occur. The groove modified by the thin film coating so as to have a shape closer to a rectangle is preferably a groove having a width of 0.01 μm to 1 μm and a depth of 3 nm to 1 μm as in the case of the conventional rectangular groove in terms of graphoepitaxial,
Further, it is preferably provided on the glass surface at intervals of 0.01 μm to 1 μm.
該薄膜の材質としては、半導体膜を成長させる際に不都
合を生じない材質であれば使用でき、例えば非晶質材料
を用いることができる。通常の基板としての用途に対し
ては、該薄膜を絶縁体で形成することが好ましいが、機
能性基板として使用するために、該薄膜を導電性材料、
半導体材料等の材料で作成することも考えられる。As the material of the thin film, any material that does not cause any inconvenience when growing a semiconductor film can be used, and for example, an amorphous material can be used. For use as a normal substrate, it is preferable to form the thin film with an insulator, but for use as a functional substrate, the thin film is made of a conductive material,
It is also conceivable to use a material such as a semiconductor material.
本発明に用いられるガラス基板には、任意のガラス基板
を用いることができるが、シリカガラス基板、電気素子
用無アルカリガラス基板等が好ましい。As the glass substrate used in the present invention, any glass substrate can be used, but a silica glass substrate, a non-alkali glass substrate for electric elements and the like are preferable.
前記半導体素子用ガラス基板は、例えば、選択エッチン
グにより作成した矩形溝つきガラス基板を水平に保持し
ながら有機金属化合物蒸気と接触させ、該有機金属化合
物を矩形溝中に凝縮させた後硬化させて、該矩形溝の底
面に、該底面と該矩形溝の側面との境界角部を覆うよう
な厚みの表面平坦な薄膜を設ける方法により製造するこ
とができる。The glass substrate for a semiconductor device is, for example, a glass substrate with a rectangular groove formed by selective etching is held horizontally and brought into contact with an organometallic compound vapor, and the organometallic compound is condensed in the rectangular groove and then cured. It can be manufactured by a method in which a thin film having a flat surface is provided on the bottom surface of the rectangular groove so as to cover the boundary corner between the bottom surface and the side surface of the rectangular groove.
該有機金属化合物としては、ガラス基板を冷却しておく
ことによって簡単に溝中に凝縮する化合物が好ましく、
例えばヘキサメチルジシロキサン等が例示できる。The organometallic compound is preferably a compound that easily condenses in the groove by cooling the glass substrate,
For example, hexamethyldisiloxane and the like can be exemplified.
該ヘキサメチルジシロキサンは、加熱によりSiO2膜とし
て硬化させることができる。The hexamethyldisiloxane can be cured as a SiO 2 film by heating.
［実施例］ ガラス基板１の表面にフォトレジスト膜５（図示せず）
を形成した後、露光現像して幅0.1μｍの開口部が0.1μ
ｍの間隔で設けられたマスク材６（図示せず）とした。
その後、該マスク材６つきガラス基板１をドライエッチ
ング法によりエッチングして深さ0.1μｍの溝２を形成
した。該溝２の角部３は、サブトレンチと呼ばれる微細
溝があったりして、必ずしも矩形の溝とはなっていなか
った。（第２図参照） 次に該溝２が設けられたマスク材６つきガラス基板１を
真空容器中に水平に保持した後、雰囲気をヘキサメチル
ジシロキサン（(Si(CH3)3)2O、以後HMDSと略称）とし、
ガラス基板１を−40℃以下に冷却した。HMDSが溝２の底
面に平坦に凝縮したのを確認した後該ガラス基板を加熱
して、HMDSをSiO2膜４とした。該加熱により硬化したSi
O2膜４は、該矩形溝の側面に連続しない形で約0.02μｍ
の厚さで溝２の底面に形成されていた。又、溝２はエッ
チングにより形成された底面の曲面部分が水平に被覆さ
れているため、エッチング直後の状態よりもより矩形に
近い形状となっていた。こうして作成された半導体素子
用ガラス基板の概略断面図を第１図に示す。[Example] A photoresist film 5 (not shown) on the surface of the glass substrate 1.
After forming the film, it is exposed and developed, and the opening with a width of 0.1 μm is 0.1 μm.
The mask material 6 (not shown) provided at intervals of m was used.
Then, the glass substrate 1 with the mask material 6 was etched by a dry etching method to form a groove 2 having a depth of 0.1 μm. The corner portion 3 of the groove 2 is not necessarily a rectangular groove because there are fine grooves called sub-trench. (See FIG. 2) Next, after holding the glass substrate 1 with the mask material 6 provided with the groove 2 horizontally in a vacuum container, the atmosphere was changed to hexamethyldisiloxane ((Si (CH 3 ) 3 ) 2 O , Hereafter referred to as HMDS),
The glass substrate 1 was cooled to -40 ° C or lower. After confirming that HMDS was flatly condensed on the bottom surface of the groove 2, the glass substrate was heated to form HMDS as a SiO 2 film 4. Si cured by the heating
The O 2 film 4 is about 0.02 μm in a shape not continuous with the side surface of the rectangular groove.
Was formed on the bottom surface of the groove 2. Further, since the groove 2 is horizontally covered with the curved surface portion of the bottom surface formed by etching, the groove 2 has a shape closer to a rectangle than that immediately after etching. FIG. 1 shows a schematic cross-sectional view of the glass substrate for a semiconductor device thus produced.
上記半導体素子用ガラス基板上に半導体膜を作成させた
所良好な特性の得られる半導体膜が得られた。該半導体
素子用ガラス基板上に作成する半導体膜は、成膜時に直
接結晶を成長させる方法により得ても、又、一旦アモル
ファス化し、その後に熱処理等を行なって結晶化させる
方法によって得てもかまわない。When a semiconductor film was formed on the glass substrate for a semiconductor device, a semiconductor film having good characteristics was obtained. The semiconductor film formed on the glass substrate for a semiconductor element may be obtained by a method of directly growing crystals during film formation, or may be obtained by a method of once amorphizing and then performing heat treatment or the like to crystallize. Absent.
［発明の効果］ 本発明によれば、ガラス基板の表面に形成した溝のコー
ナの垂直性が向上できるので、従来のドライエッチング
等だけで形成した溝付き基板に比べて半導体膜の結晶面
を容易に単一化することができる。EFFECTS OF THE INVENTION According to the present invention, since the verticality of the corners of the groove formed on the surface of the glass substrate can be improved, the crystal plane of the semiconductor film can be made smaller than that of the conventional grooved substrate formed only by dry etching or the like. Can be easily unified.
第１図は本発明の実施例により作成した半導体素子用ガ
ラス基板の概略を示す断面図、第２図は従来の半導体素
子用ガラス基板の概略を示す断面図である。FIG. 1 is a sectional view showing an outline of a glass substrate for a semiconductor device prepared according to an embodiment of the present invention, and FIG. 2 is a sectional view showing an outline of a conventional glass substrate for a semiconductor device.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭58−25220（ＪＰ，Ａ) 特開 昭59−124123（ＪＰ，Ａ) ─────────────────────────────────────────────────── --Continued from the front page (56) References JP-A-58-25220 (JP, A) JP-A-59-124123 (JP, A)
Claims (2)
作成する半導体用ガラス基板の製造方法において、選択
エッチングにより作成した矩形溝付きガラス基板を水平
に保持しながら有機金属化合物蒸気と接触させ、該有機
金属化合物を矩形溝中に凝縮させた後硬化させて、該矩
形溝底面と該矩形溝の側面との境界の角部を覆う様な厚
みの表面平坦な薄膜を設けることを特徴とする半導体用
ガラス基板の製造方法。1. A method of manufacturing a glass substrate for a semiconductor in which a large number of rectangular grooves are formed on the surface of a main part of a glass substrate, the rectangular grooved glass substrate formed by selective etching is held horizontally while being contacted with an organometallic compound vapor. The organic metal compound is condensed in the rectangular groove and then cured to form a thin film having a flat surface so as to cover the corner portion of the boundary between the bottom surface of the rectangular groove and the side surface of the rectangular groove. And a method for manufacturing a glass substrate for a semiconductor.
サンである特許請求の範囲第１項記載の半導体用ガラス
基板の製造方法。2. The method for producing a glass substrate for a semiconductor according to claim 1, wherein the organometallic compound is hexamethyldisiloxane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62285243A JPH0727983B2 (en) | 1987-11-13 | 1987-11-13 | Method for manufacturing glass substrate for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62285243A JPH0727983B2 (en) | 1987-11-13 | 1987-11-13 | Method for manufacturing glass substrate for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01128420A JPH01128420A (en) | 1989-05-22 |
| JPH0727983B2 true JPH0727983B2 (en) | 1995-03-29 |
Family
ID=17688965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62285243A Expired - Lifetime JPH0727983B2 (en) | 1987-11-13 | 1987-11-13 | Method for manufacturing glass substrate for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0727983B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3023617U (en) * | 1995-10-06 | 1996-04-23 | 株式会社ケービーエル | Endless rubber crawler |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5825220A (en) * | 1981-08-07 | 1983-02-15 | Mitsubishi Electric Corp | Manufacture of semiconductor substrate |
| JPS59124123A (en) * | 1982-12-28 | 1984-07-18 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor device |
-
1987
- 1987-11-13 JP JP62285243A patent/JPH0727983B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3023617U (en) * | 1995-10-06 | 1996-04-23 | 株式会社ケービーエル | Endless rubber crawler |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01128420A (en) | 1989-05-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |