JPH0728082B2 - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPH0728082B2 JPH0728082B2 JP60053695A JP5369585A JPH0728082B2 JP H0728082 B2 JPH0728082 B2 JP H0728082B2 JP 60053695 A JP60053695 A JP 60053695A JP 5369585 A JP5369585 A JP 5369585A JP H0728082 B2 JPH0728082 B2 JP H0728082B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- semiconductor laser
- electrons
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 230000000694 effects Effects 0.000 claims description 6
- 238000005253 cladding Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体レーザに関する。The present invention relates to a semiconductor laser.
（従来技術とその問題点） 従来開発された半導体レーザとして第２図に示すような
量子井戸構造レーザがある。このような量子井戸構造レ
ーザでは閉じ込め層20により電子及び正孔が量子井戸層
21内で層厚方向に閉じ込められて量子化され擬二元的に
振舞うため、閾値電流密度が小さく、温度特性が良いと
いう優れた特性を有している。（エレクトロニクス、レ
ターズ第18巻1095ページ〔1982年〕） しかしながら、このような従来の量子井戸構造レーザで
は層厚方向のみ量子化されるだけで量子井戸層21の面に
平行な方向では量子化されていないため、閾値電流の低
減や温度特性の改善がまだまだ不十分であった。(Prior Art and its Problems) As a semiconductor laser that has been conventionally developed, there is a quantum well structure laser as shown in FIG. In such a quantum well structure laser, the confinement layer 20 allows electrons and holes to pass through the quantum well layer.
Since it is confined in the layer thickness direction inside 21 and quantized and behaves in a pseudo-binary manner, it has excellent characteristics that the threshold current density is small and the temperature characteristic is good. (Electronics, Letters, Vol. 18, p. 1095 [1982]) However, in such a conventional quantum well structure laser, only the layer thickness direction is quantized, and the quantum well layer 21 is quantized in the direction parallel to the plane. Therefore, reduction of threshold current and improvement of temperature characteristics were still insufficient.
（発明の目的） 本発明はこのような欠点を除去した、低閾値かつ温度特
性に優れた半導体レーザを提供することにある。(Object of the Invention) It is an object of the present invention to provide a semiconductor laser having a low threshold value and excellent temperature characteristics, in which such drawbacks are eliminated.
（発明の構成） 本発明の半導体レーザは、利得領域である活性層を有
し、この活性層の層厚が量子効果が現われるほど薄く、
かつこの活性層の面方向の異なる少なくとも二方向に、
量子効果が現われるほどに周期の短かいうねりを有し、
この活性層に隣接して活性層の禁制帯幅より禁制帯幅の
大きい閉じ込め層を少なくとも有する構成となってい
る。(Structure of the Invention) The semiconductor laser of the present invention has an active layer that is a gain region, and the layer thickness of this active layer is so thin that the quantum effect appears.
And in at least two different plane directions of this active layer,
It has a swell with a short period so that the quantum effect appears,
Adjacent to this active layer, there is at least a confinement layer having a band gap larger than the band gap of the active layer.
（本発明の原理） 本発明は上述の構成をとることにより従来技術の問題点
を解決した。(Principle of the Present Invention) The present invention has solved the problems of the prior art by adopting the above configuration.
活性層が薄膜状であり、なおかつ積層方向に垂直な方向
の異なる二方向に短かい周期のうねりを有し、この活性
層に隣接して閉じ込め層を有する構造となっているた
め、電子及び正孔は、層厚方向に閉じ込められるととも
にうねりのある二方向にも閉じ込められる。このため電
子及び正孔はどの方向にも自由に動くことができず、擬
“0"次元的なふるまいをする。このためエネルギー準位
は離散的になり、状態密度はエネルギー準位の所のみに
値を持つデルタ関数的になる。このため、注入された電
子及び正孔はレーザ発振に有効に寄与し、低閾値でなお
かつ温度条件に優れた半導体レーザが得られる。Since the active layer has a thin film shape, has a short period undulation in two different directions perpendicular to the stacking direction, and has a confinement layer adjacent to this active layer, it has a structure of electrons and positive electrons. The holes are confined in the layer thickness direction and also in two waviness directions. For this reason, electrons and holes cannot move freely in any direction, and behave like pseudo "0" dimensions. Therefore, the energy level becomes discrete, and the density of states becomes a delta function having a value only at the energy level. Therefore, the injected electrons and holes effectively contribute to laser oscillation, and a semiconductor laser having a low threshold and excellent temperature conditions can be obtained.
（実施例） 次に図面を参照して本発明の実施例について説明する。(Example) Next, the Example of this invention is described with reference to drawings.
第１図は一実施例を示す斜視図でこの半導体レーザは面
に平行な二方向に、周期が100mm以下の凹凸を形成した
ｎ型GaAsからなる基板10上にバッファー層11、ｎ型AlxG
a1-xAsからなるｎ型クラッド層12、AlyGa1-yAsからなる
第１ガイド層13、GaAsらなる厚が10mmである活性層14、
AlzGa1-zAsからなる第２ガイド層15、Ｐ型AluGa1-uAsか
らなるＰ型クラッド層16、Ｐ型GaAsからなるキャップ層
17、を順次積層した積層構造と、Ｐ電極18、ｎ電極19か
ら構成されている。FIG. 1 is a perspective view showing an embodiment. This semiconductor laser has a buffer layer 11 and an n-type AlxG on a substrate 10 made of n-type GaAs in which irregularities having a period of 100 mm or less are formed in two directions parallel to the surface.
an n-type cladding layer 12 made of a 1-x As, a first guide layer 13 made of AlyGa 1-y As, an active layer 14 made of GaAs with a thickness of 10 mm,
Second guide layer 15 made of AlzGa 1-z As, P - type cladding layer 16 made of P - type AluGa 1-u As, cap layer made of P-type GaAs
It is composed of a laminated structure in which 17 are sequentially laminated, a P electrode 18 and an n electrode 19.
基板上の二方向の周期的な凹凸は、二光束干渉露光法に
よるレジスト形成とケミカルエッチングを２回行なうこ
とにより製作することができる。また、基板上の結晶成
長層は、分子線結晶成長法により、製作した。The periodic unevenness in two directions on the substrate can be manufactured by performing resist formation by the two-beam interference exposure method and chemical etching twice. The crystal growth layer on the substrate was manufactured by the molecular beam crystal growth method.
第１ガイド層13及び第２ガイド層15によって作られる電
子及び正孔に対するポテンシャルは、活性層の面方向
で、周期的な変動を示している。このため、層厚方向に
閉じ込められている電子及び正孔は、面方向にも自由に
運動することができない。すなわち、電子及び正孔は３
次元的に閉じ込められた、擬ゼロ次元的振舞を示すこと
になる。The potentials for electrons and holes formed by the first guide layer 13 and the second guide layer 15 show periodic fluctuations in the plane direction of the active layer. Therefore, the electrons and holes that are confined in the layer thickness direction cannot freely move in the plane direction. That is, the number of electrons and holes is 3
It will exhibit quasi-zero-dimensional behavior that is dimensionally confined.
このような状態では、電子及び正孔のエネルギー準位は
離散的になり、状態密度はエネルギー準位で無限大とな
る。このため、レーザの利得スペクトルは非常に狭く、
わずかの注入電流により、レーザ発振を行なうことがで
きる。また、エネルギー準位が離散的なため、温度によ
る電子及び正孔のエネルギー分布の変化がほとんどな
く、温度特性に優れた半導体レーザとなる。In such a state, the energy levels of electrons and holes are discrete, and the density of states becomes infinite at the energy level. Therefore, the gain spectrum of the laser is very narrow,
Laser oscillation can be performed with a small injection current. Further, since the energy levels are discrete, there is almost no change in the energy distribution of electrons and holes due to temperature, and the semiconductor laser has excellent temperature characteristics.
本実施例では活性層を１つとしたがこれに限らず多層の
量子井戸構造でも原理的には同じであり、同様の効果が
得られる。In this embodiment, the number of active layers is one, but the present invention is not limited to this, and a quantum well structure having a multilayer structure is the same in principle, and similar effects can be obtained.
また上述の実施例では組成の一様な第１ガイド層及び第
２ガイド層を設けたがこれに限らず、グレードインデッ
クス構造や、ガイド層を特に設けない構造でも良い。Further, although the first guide layer and the second guide layer having a uniform composition are provided in the above-described embodiments, the present invention is not limited to this, and a grade index structure or a structure in which no guide layer is particularly provided may be used.
また上述の実施例ではAlGaAs系混晶を素材としたがこれ
に限らずInGaAs系等他の半導体を用いてもよいことは明
らかである。Further, although AlGaAs mixed crystal is used as a material in the above-mentioned embodiments, it is obvious that other semiconductors such as InGaAs may be used as well.
（発明の効果） 本発明によれば閾値電流密度が小さく、かつ温度特性に
優れた高性能半導体レーザを得ることができる。(Effect of the Invention) According to the present invention, a high-performance semiconductor laser having a small threshold current density and excellent temperature characteristics can be obtained.
第１図は本発明の一実施例を示す斜視図、第２図は従来
の量子井戸構造レーザの斜視図である。 図において 10……基板、11……バッファー層、12……ｎ型クラッド
層、13……第１ガイド層、14……活性層、15……第２ガ
イド層、16……Ｐ型クラッド層、17……キャプ層、18…
…Ｐ電極、９……ｎ電極、20……閉じ込め層、21……量
子井戸層。FIG. 1 is a perspective view showing an embodiment of the present invention, and FIG. 2 is a perspective view of a conventional quantum well structure laser. In the figure, 10 ... Substrate, 11 ... Buffer layer, 12 ... N-type cladding layer, 13 ... First guide layer, 14 ... Active layer, 15 ... Second guide layer, 16 ... P-type cladding layer , 17 ... Cap layer, 18 ...
... P electrode, 9 ... n electrode, 20 ... confinement layer, 21 ... quantum well layer.
Claims (1)
の層厚が量子効果が現われるほど薄く、かつこの活性層
の面に平向な方向の異なる少なくとも二方向に、量子効
果が現われるほどに周期の短かいうねりを有し、この活
性層に隣接して、活性層の禁制帯幅より禁制帯幅の大き
い閉じ込め層を少なくとも有することを特徴とする半導
体レーザ。1. An active layer serving as a gain region, wherein the layer thickness of the active layer is so thin that a quantum effect appears, and the quantum effect is exerted in at least two directions different from each other in a plane parallel to the plane of the active layer. A semiconductor laser having a undulation having a short period as it appears and having at least a confinement layer having a band gap larger than the band gap of the active layer adjacent to the active layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60053695A JPH0728082B2 (en) | 1985-03-18 | 1985-03-18 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60053695A JPH0728082B2 (en) | 1985-03-18 | 1985-03-18 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61212085A JPS61212085A (en) | 1986-09-20 |
| JPH0728082B2 true JPH0728082B2 (en) | 1995-03-29 |
Family
ID=12949948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60053695A Expired - Lifetime JPH0728082B2 (en) | 1985-03-18 | 1985-03-18 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0728082B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4361731A1 (en) | 2022-10-31 | 2024-05-01 | Ricoh Company, Ltd. | Fixing device and image forming apparatus incorporating the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07109928B2 (en) * | 1989-06-30 | 1995-11-22 | 光計測技術開発株式会社 | Semiconductor laser device and manufacturing method thereof |
| US5309472A (en) * | 1991-06-24 | 1994-05-03 | Sharp Kabushiki Kaisha | Semiconductor device and a method for producing the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607290A (en) * | 1983-06-24 | 1985-01-16 | Matsushita Electric Ind Co Ltd | Color video signal reproducing device |
| JPS607190A (en) * | 1983-06-24 | 1985-01-14 | Nippon Telegr & Teleph Corp <Ntt> | Multidimensional super lattice and manufacture thereof |
-
1985
- 1985-03-18 JP JP60053695A patent/JPH0728082B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4361731A1 (en) | 2022-10-31 | 2024-05-01 | Ricoh Company, Ltd. | Fixing device and image forming apparatus incorporating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61212085A (en) | 1986-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6352792B2 (en) | ||
| EP0486128B1 (en) | A semiconductor optical device and a fabricating method therefor | |
| US4823352A (en) | Semiconductor laser with a variable oscillation wavelength | |
| US5345464A (en) | Semiconductor laser | |
| JPH05102604A (en) | Semiconductor laser device | |
| US5528614A (en) | Quantum well semiconductor laser device structure | |
| US4674094A (en) | Semiconductor laser with an active layer having varying thicknesses | |
| JPS62257783A (en) | Semiconductor laser element | |
| JPH0728082B2 (en) | Semiconductor laser | |
| US5822350A (en) | Semiconductor laser | |
| US5805628A (en) | Semiconductor laser | |
| US4581743A (en) | Semiconductor laser having an inverted layer in a stepped offset portion | |
| US5345461A (en) | Semiconductor laser high optical gain quantum well | |
| US5642372A (en) | Quantum-well type semiconductor laser device having multi-layered quantum-well layer | |
| JPS61212084A (en) | Semiconductor laser | |
| JP2827605B2 (en) | Semiconductor laser device | |
| JPS58225680A (en) | Semiconductor laser | |
| JPS648477B2 (en) | ||
| JP3777027B2 (en) | Semiconductor laser device | |
| EP0566411B1 (en) | Semiconductor laser device | |
| JPH0576794B2 (en) | ||
| JPH0728093B2 (en) | Semiconductor laser device | |
| JP2794743B2 (en) | Quantum well semiconductor laser device | |
| JP3206573B2 (en) | Semiconductor laser and manufacturing method thereof | |
| JP2754671B2 (en) | Semiconductor quantum wire structure and manufacturing method thereof |