JPH0729869B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JPH0729869B2 JPH0729869B2 JP61155404A JP15540486A JPH0729869B2 JP H0729869 B2 JPH0729869 B2 JP H0729869B2 JP 61155404 A JP61155404 A JP 61155404A JP 15540486 A JP15540486 A JP 15540486A JP H0729869 B2 JPH0729869 B2 JP H0729869B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- diffraction grating
- film
- manufacturing
- manufacturing semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000000034 method Methods 0.000 title description 7
- 238000009826 distribution Methods 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体装置の製造方法に関するものである。The present invention relates to a method for manufacturing a semiconductor device.
従来の技術 近年、半導体の集積度は年々高まってきており、そのた
めに、素子を三次元的に集積していく方法の研究がさか
んに進められている。2. Description of the Related Art In recent years, the degree of integration of semiconductors has been increasing year by year, and for that reason, research on methods for three-dimensionally integrating elements has been vigorously pursued.
素子を三次元的に集積するためには、絶縁膜上に単結晶
シリコンを形成する。いわゆるSOI（Si on Insulator）
形成技術の確立が重要である。In order to integrate the device three-dimensionally, single crystal silicon is formed on the insulating film. So-called SOI (Si on Insulator)
The establishment of forming technology is important.
ここで、第３図に従って、従来のSOI膜の製造方法につ
いて説明する。31は単結晶Si基板、32はシリコン酸化
膜、33は多結晶シリコン膜、34はレーザービームであ
る。従来は第３図に示すように、レーザービーム34の走
査によってシリコン酸化膜32上に形成した多結晶シリコ
ン膜33を溶融後、急冷させて結晶化させる方法がしばし
ばとられていた。Here, a conventional method for manufacturing an SOI film will be described with reference to FIG. Reference numeral 31 is a single crystal Si substrate, 32 is a silicon oxide film, 33 is a polycrystalline silicon film, and 34 is a laser beam. Conventionally, as shown in FIG. 3, a method of melting the polycrystalline silicon film 33 formed on the silicon oxide film 32 by scanning with a laser beam 34 and then rapidly cooling it to crystallize it is often used.
発明が解決しようとする問題点 しかしながら、前記の製造方法では、レーザービーム34
のエネルギー分布がガウス分布であるため、ビームの周
辺部から固化が始まり、再結晶化領域に細かい欠陥が入
るという問題があった。Problems to be Solved by the Invention However, in the above manufacturing method, the laser beam 34
Since the energy distribution of Ga is a Gaussian distribution, there is a problem that solidification starts from the peripheral portion of the beam and fine defects enter the recrystallized region.
本発明は、上記の問題点を解決するもので、再結晶化領
域に欠陥が入らない半導体装置の製造方法を提供するも
のである。The present invention solves the above problems and provides a method of manufacturing a semiconductor device in which no defects are introduced into the recrystallized region.
問題点を解決するための手段 前記問題点を解決するためにレーザービームを回折格子
を通過させることにより、ビーム内のエネルギー分布を
ガウス型から、中心部が小さく周辺部が大きい分布に変
換させた後、多結晶シリコン膜に照射することから構成
されている。Means for Solving the Problems In order to solve the above problems, a laser beam was passed through a diffraction grating to convert the energy distribution in the beam from a Gaussian shape to a distribution with a small central portion and a large peripheral portion. Then, the polycrystalline silicon film is irradiated.
作 用 前記の製造方法によれば、ビーム内の温度分布を、中心
部が低く、周辺部を高くすることができるので、再結晶
化は、中心部からおこる。即ち再結晶化領域に欠陥の少
ない再結晶膜を形成することができる。Operation According to the above-described manufacturing method, the temperature distribution in the beam can be made low in the central part and high in the peripheral part, so that recrystallization occurs from the central part. That is, a recrystallized film with few defects can be formed in the recrystallized region.
実施例 第１図は、本発明の半導体装置の製造方法の一実施例を
示したものである。Embodiment FIG. 1 shows an embodiment of a method for manufacturing a semiconductor device according to the present invention.
11は単結晶Si基板、12はシリコン酸化膜、13は多結晶シ
リコン膜、14は回折格子、15はレーザービームである。11 is a single crystal Si substrate, 12 is a silicon oxide film, 13 is a polycrystalline silicon film, 14 is a diffraction grating, and 15 is a laser beam.
ここで、まず初めにここで使っている回折格子について
説明する。Here, the diffraction grating used here will be described first.
第２図は回折格子の回折現象について説明したもので、
21がＸ方向に有限のスリットの大きさＳをもち、間隔ｄ
の回折格子、22が波長λのレーザービーム、23が強度分
布を表わしたものである。フラウンホーファーの回折理
論によると大きさＳのスリットによる振動数ｕ（ｘ）は で表わされる。従って強度分布Ｊ（ｘ）は （２）式は、ｘ＝０で最大となり、 （ｍは自然数）で０となる関数である。従ってd,Sを適
当に選べば、（即ち ２つのスリットによる強度分布23は第２図のようにな
る。FIG. 2 explains the diffraction phenomenon of the diffraction grating.
21 has a finite slit size S in the X direction, and the distance d
Of the diffraction grating, 22 is a laser beam of wavelength λ, and 23 is an intensity distribution. According to Fraunhofer's diffraction theory, the frequency u (x) due to the slit of size S is It is represented by. Therefore, the intensity distribution J (x) is Equation (2) is maximum at x = 0, (M is a natural number) is a function that becomes zero. Therefore, if d and S are selected appropriately, The intensity distribution 23 by the two slits is as shown in FIG.
よって、第１図において多結晶シリコン膜13上のエネル
ギー分布は、ビームの中心部が小さく、周辺部が大きい
分布となる。従って、再結晶化はビームの中心部からお
こるので、欠陥のない再結晶化領域を形成することがで
きる。Therefore, in FIG. 1, the energy distribution on the polycrystalline silicon film 13 is such that the central part of the beam is small and the peripheral part is large. Therefore, since recrystallization occurs from the center of the beam, a defect-free recrystallization region can be formed.
発明の効果 以上述べてきたように、本発明によれば、回折格子を使
うというきわめて簡単な方法で、欠陥のない再結晶を形
成することができ、実用的にきわめて有効な方法であ
る。EFFECTS OF THE INVENTION As described above, according to the present invention, a recrystallization without defects can be formed by a very simple method of using a diffraction grating, which is an extremely effective method practically.
第１図は本発明の一実施例を示す概念図、第２図は本発
明に使われる回折格子を説明するための説明図、第３図
は従来の方法を表わした概念図である。 11……単結晶シリコン基板、12……シリコン酸化膜、13
……多結晶シリコン膜、14……回折格子、15……レーザ
ービーム。FIG. 1 is a conceptual diagram showing an embodiment of the present invention, FIG. 2 is an explanatory diagram for explaining a diffraction grating used in the present invention, and FIG. 3 is a conceptual diagram showing a conventional method. 11 …… Single crystal silicon substrate, 12 …… Silicon oxide film, 13
...... Polycrystalline silicon film, 14 …… Diffraction grating, 15 …… Laser beam.
Claims (1)
ネルギービームを回折格子を通して中心部が小さく周辺
部が大きいエネルギー分布に変換した後、前記多結晶膜
上に照射し、再結晶化させる工程とを含むことを特徴と
する半導体装置の製造方法。1. A step of forming a polycrystalline film on an insulating film, and after converting an energy beam into an energy distribution having a small central part and a large peripheral part through a diffraction grating, the polycrystalline film is irradiated with the energy beam and recrystallized. A method of manufacturing a semiconductor device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61155404A JPH0729869B2 (en) | 1986-07-02 | 1986-07-02 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61155404A JPH0729869B2 (en) | 1986-07-02 | 1986-07-02 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6311592A JPS6311592A (en) | 1988-01-19 |
| JPH0729869B2 true JPH0729869B2 (en) | 1995-04-05 |
Family
ID=15605234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61155404A Expired - Lifetime JPH0729869B2 (en) | 1986-07-02 | 1986-07-02 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0729869B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6029680B2 (en) * | 1979-12-24 | 1985-07-11 | 日本電信電話株式会社 | Method for producing oriented crystalline thin films |
-
1986
- 1986-07-02 JP JP61155404A patent/JPH0729869B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6311592A (en) | 1988-01-19 |
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