JPH0732083B2 - Electrode forming method for positive temperature coefficient thermistor - Google Patents
Electrode forming method for positive temperature coefficient thermistorInfo
- Publication number
- JPH0732083B2 JPH0732083B2 JP57158589A JP15858982A JPH0732083B2 JP H0732083 B2 JPH0732083 B2 JP H0732083B2 JP 57158589 A JP57158589 A JP 57158589A JP 15858982 A JP15858982 A JP 15858982A JP H0732083 B2 JPH0732083 B2 JP H0732083B2
- Authority
- JP
- Japan
- Prior art keywords
- ohmic
- electrode
- temperature coefficient
- positive temperature
- coefficient thermistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 14
- 239000002184 metal Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 238000010304 firing Methods 0.000 description 12
- 238000000605 extraction Methods 0.000 description 7
- 238000007772 electroless plating Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002003 electrode paste Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】 本発面はオーミツク性金属ペーストと非オーミツク性金
属ペーストとを使用した正特性サーミスタの電極形成方
法に関する。The present invention relates to a method for forming an electrode of a positive temperature coefficient thermistor using an ohmic metal paste and a non-ohmic metal paste.
正特性サーミスタの電極形成方法としては、従来より、
正特性サーミスタ素体にオーミツク性の得られ易いニツ
ケル（Ni）等の無電解メツキを施した後に熱処理を行う
か、あるいは、この無電解メツキ膜の上に銀（Ag）等の
金属ペーストを塗布してこの金属ペーストを上記無電解
メツキ膜に焼き付ける等の方法が一般に知られている。Conventionally, as a method of forming electrodes for a positive temperature coefficient thermistor,
The positive temperature coefficient thermistor body is subjected to heat treatment after electroless plating such as nickel (Ni), which is easy to obtain ohmic properties, or coated with a metal paste such as silver (Ag) on the electroless plating film. Then, a method of baking the metal paste on the electroless plating film is generally known.
ところで、上記の電極形成方法は、無電解メツキ法によ
る湿式処理を必要とするため、無電解メツキによる残渣
がしばしば正特性サーミスタ素体の特性劣化を招くこと
があつた。By the way, since the above-mentioned electrode forming method requires wet treatment by the electroless plating method, the residue due to the electroless plating often causes deterioration of the characteristics of the positive temperature coefficient thermistor element body.
また正特性サーミスタの電極形成には、オーミツク性金
属ペーストと非オーミツク性金属ペーストとを使用し、
先にオーミツク性金属ペーストを正特性サーミスタ素体
の電極形成面に塗布して焼き付けた後、非オーミツク性
金属ペーストを上記正特性サーミスタ素体の電極引出部
に塗布して焼き付ける乾式電極形成法が一般に採用され
ている。For forming the positive temperature coefficient thermistor electrodes, an ohmic metal paste and a non-ohmic metal paste are used.
The dry electrode forming method is that the ohmic metal paste is first applied to the electrode forming surface of the PTC thermistor element body and baked, and then the non-ohmic metal paste is applied to the electrode lead-out portion of the PTC thermistor element body and baked. Generally adopted.
上記非オーミツク性金属ペーストは、銀（Ag）等の主成
分金属、ガラスフリツトを樹脂成分と溶剤で混練したも
のであり、また、上記オーミツク性金属ペーストは非オ
ーミツク性金属ペーストにオーミツク性を高めるため
に、亜鉛（Zn）、アンチモン（Sb）等の卑金属成分を混
入したものである。The non-ohmic metal paste is a main component metal such as silver (Ag), a glass frit is kneaded with a resin component and a solvent, and the ohmic metal paste is a non-ohmic metal paste in order to enhance the ohmic property. Is mixed with base metal components such as zinc (Zn) and antimony (Sb).
上記非オーミツク性金属ペーストは、主成分金属の最適
焼成温度に合つた融点のガラスフリツトを用いて最適焼
成温度で焼成を行うのに対して、上記オーミツク性金属
ペーストは卑金属成分が酸化されない温度にガラスフリ
ツトの融点を合致させ、主成分金属の最適焼成温度より
も低い温度で焼成を行つている。The non-ohmic metal paste is fired at an optimum firing temperature using a glass frit having a melting point that matches the optimum firing temperature of the main component metal, whereas the ohmic metal paste is a glass frit at a temperature at which the base metal component is not oxidized. The melting points are matched and firing is performed at a temperature lower than the optimum firing temperature of the main component metal.
このため、正特性サーミスタ素体の電極形成部にオーム
性金属ペーストを塗布して焼成を行つた後、非オーム性
金属ペーストを電極引出部に塗布して焼成を行うと、オ
ーム性金属ペーストの焼成部分が高温にさらされ、その
中の卑金属成分が酸化されてオーム性が低下する。ま
た、このオーム性の低下を防止するため、非オーム性金
属ペーストの焼成温度を低くすると、非オーム性電極の
正特性サーミスタ素体への密着力が弱くなる。Therefore, when the ohmic metal paste is applied to the electrode forming portion of the positive temperature coefficient thermistor body and firing is performed, the non-ohmic metal paste is applied to the electrode lead-out portion and firing is performed. The calcined portion is exposed to high temperature, and the base metal component therein is oxidized to lower the ohmic property. If the firing temperature of the non-ohmic metal paste is lowered in order to prevent the deterioration of the ohmic property, the adhesion of the non-ohmic electrode to the PTC thermistor element body becomes weak.
本発明は従来の正特性サーミスタの電極形成方法におけ
る上記事情に鑑みてなされたものであつて、正特性サー
ミスタ素体に非オーミツク性電極を形成した後にオーミ
ツク性電極を形成することにより、両電極をいずれも最
適焼成温度で焼成し、主電極のオーミツク性を良好なも
のとするとともに、引出用電極の密着強度の向上を図る
ことを目的としている。The present invention has been made in view of the above circumstances in the conventional method for forming an electrode of a positive temperature coefficient thermistor, in which the non-ohmic electrode is formed on the positive temperature coefficient thermistor element body, and then the ohmic electrode is formed to form both electrodes. Both are fired at an optimum firing temperature to improve the ohmic property of the main electrode and to improve the adhesion strength of the extraction electrode.
本発明は、オーミツク性を有するオーミツク性金属ペー
ストとオーミツク性を有しない非オーミツク性金属ペー
ストとを使用した正特性サーミスタの電極形成方法であ
つて、上記非オーミツク性金属ペーストを正特性サーミ
スタ素体の電極引出部に塗布してこの非オーミツク性金
属ペーストを焼き付けて非オーミツク性電極を形成した
後、上記焼き付けた非オーミツク性電極の一部に重ねて
オーミツク性金属ペーストを上記正特性サーミスタ素体
の電極形成部に塗布し、上記オーミツク性金属ペースト
を上記電極形成部に焼き付けてオーミツク性電極を形成
することを特徴としている。The present invention is a method for forming an electrode of a positive temperature coefficient thermistor using an ohmic metal paste having ohmic property and a non-ohmic metal paste having no ohmic property, wherein the non-ohmic metal paste is a positive temperature coefficient thermistor body. The non-ohmic metal paste is applied to the electrode lead-out part to be baked to form a non-ohmic electrode, and the ohmic metal paste is overlaid on a part of the baked non-ohmic electrode to form the positive temperature coefficient thermistor element body. Is applied to the electrode forming portion and the ohmic metal paste is baked on the electrode forming portion to form an ohmic electrode.
以下、添付図面を参照して本発明の実施例を説明する。Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
先ず、第１図（ａ）に示すように、チタン酸バリウム
（BaTiO3）等の正特性サーミスタ材料を四角形の板状に
成形して焼成した正特性サーミスタ素体11を用意する。First, as shown in FIG. 1 (a), a positive temperature coefficient thermistor body 11 is prepared by molding a positive temperature coefficient thermistor material such as barium titanate (BaTiO 3 ) into a rectangular plate and firing it.
上記正特性サーミスタ素体11の相対向する両主面12,12
の予め定められた電極引出部に、第１図（ｂ）に示すよ
うに、非オーミツク性金属ペースト13,13をほゞ一定巾
に塗布した後、全体を750℃ないし800℃に加熱して、上
記の非オーミツク性金属ペイント13,13を焼成する。Both main surfaces 12, 12 of the positive temperature coefficient thermistor element body 11 facing each other.
As shown in FIG. 1 (b), the non-ohmic metal paste 13,13 is applied to the predetermined electrode lead-out part of the above in a substantially constant width, and then the whole is heated to 750 ° C to 800 ° C. The non-omic metallic paint 13, 13 is fired.
このとき、銀（Ag）等の主成分金属、ガラスフリツト、
樹脂成分および溶剤からなる非オーミツク性金属ペース
ト13,13中の上記樹脂成分および溶剤は除去される。At this time, the main component metal such as silver (Ag), glass frit,
The above-mentioned resin component and solvent in the non-ohmic metal paste 13, 13 composed of the resin component and solvent are removed.
次に、第１図（ｃ）に示すように、上記正特性サーミス
タ素体11の両主面12,12の主電極形成部にオーミツク性
金属ペースト14,14を、上記非オーミツク性金属ペース
ト13,13の焼成物である引出電極13′,13′の上に一部重
ねて塗布する。Next, as shown in FIG. 1 (c), ohmic metal pastes 14 and 14 and non-ohmic metal paste 13 are applied to the main electrode forming portions of both main surfaces 12 and 12 of the positive temperature coefficient thermistor body 11. , 13 ', which are fired products of 13 and 13, are partially overlapped and applied.
その後、全体を例えば500℃に加熱して上記オーミツク
性金属ペースト14,14を焼成するとともに樹脂成分およ
び溶剤を除去し、第１図（ｄ）に示すように、正特性サ
ーミスタ素体11にオーミツク性を有する主電極14′,1
4′を形成する。After that, the whole is heated to, for example, 500 ° C., the ohmic metal pastes 14 and 14 are fired, the resin component and the solvent are removed, and as shown in FIG. 1 (d), the positive temperature coefficient thermistor element body 11 is ohmic. Main electrode 14 ', 1
Form 4 '.
上記のように、オーミツク性金属ペースト14,14の焼成
前に非オーミツク性の引出電極13′、13′を形成してお
けば、上記非オーミツク性金属ペースト13,13およびオ
ーミツク性金属ペースト14,14はいずれも最適焼成温度
で焼成することができ、引出電極13′,13′の密着強度
および主電極14′,14′のオーミツク性をともに良好な
ものとすることができる。As described above, if the non-ohmic extraction electrodes 13 ', 13' are formed before firing the ohmic metal pastes 14, 14, the non-ohmic metal pastes 13, 13 and the ohmic metal paste 14, All of 14 can be fired at the optimum firing temperature, and both the adhesion strength of the extraction electrodes 13 ', 13' and the ohmic property of the main electrodes 14 ', 14' can be improved.
上記実施例において、主電極14′,14′と引出電極13′,
13′との重なり部分に生じる段差S,Sを吸収するため、
第２図に示すように、正特性サーミスタ素体11の両主面
12,12に段差12a,12aを設けるか、あるいは第３図に示す
ように、正特性サーミスタ素体11の両主面12,12に溝12
b,12bを設けるようにしておくことが好ましい。In the above embodiment, the main electrodes 14 ', 14' and the extraction electrode 13 ',
In order to absorb the steps S and S that occur in the overlapping portion with 13 ',
As shown in FIG. 2, both main surfaces of the positive temperature coefficient thermistor element body 11
Steps 12a and 12a are provided on the surfaces 12 and 12, or grooves 12 are formed on both main surfaces 12 and 12 of the PTC thermistor element body 11 as shown in FIG.
It is preferable to provide b and 12b.
また、本発明は、第４図に示すように、正特性サーミス
タ素体11の一つの主面12にオーミツク性の櫛歯状主電極
15,15を形成した正特性サーミスタにも適用することが
できる。Further, according to the present invention, as shown in FIG. 4, an ohmic comb-shaped main electrode is formed on one main surface 12 of the positive temperature coefficient thermistor element body 11.
It can also be applied to a positive temperature coefficient thermistor with 15,15 formed.
第４図の正特性サーミスタの場合は、正特性サーミスタ
素体11の相対向する側面16,16から櫛歯状主電極15,15を
形成する上記主面12に対向するいま一つの主面12にかけ
て、非オーミツク性の引出電極13′,13′を形成した
後、オーミツク性の上記櫛歯状電極15,15を形成すれば
よい。In the case of the positive temperature coefficient thermistor shown in FIG. 4, another main surface 12 facing the above-mentioned main surface 12 forming the comb-shaped main electrodes 15, 15 from the side surfaces 16, 16 facing each other of the positive temperature coefficient thermistor element body 11. Then, the non-ohmic extraction electrodes 13 'and 13' may be formed, and then the ohmic comb-shaped electrodes 15 and 15 may be formed.
以上、詳述したことからも明らかなように、本発明は、
オーミツク性金属ペーストと非オーミツク性金属ペース
トとを使用する乾式電極形成法による正特性サーミスタ
の電極形成法において、高い最適焼成温度を必要とする
非オーミツク性の引出電極を最初に形成するようにした
から、オーミツク性の主電極および非オーミツク性の引
出電極とも最適温度で焼成することができ、主電極のオ
ーミツク性が良好で引出電極の正特性サーミスタ素体へ
の密着強度の強い正特性サーミスタを得ることができ
る。As is clear from the above description, the present invention is
In the electrode forming method of the positive temperature coefficient thermistor by the dry electrode forming method using the ohmic metal paste and the non-ohmic metal paste, the non-ohmic extraction electrode requiring a high optimum firing temperature was formed first. Therefore, both the ohmic main electrode and the non-ohmic extraction electrode can be fired at the optimum temperature, and the positive electrode thermistor with good adhesion to the positive electrode thermistor body with good ohmicity of the main electrode can be obtained. Obtainable.
また、本発明によれば、ニツケル等の無電解メツキを使
用する場合のような残渣の影響がなく、正特性サーミス
タ素体の特性劣化を生じない、信頼性の高い電極を構成
することができる。Further, according to the present invention, it is possible to construct a highly reliable electrode that is free from the influence of residues as in the case of using electroless plating such as nickel and does not cause characteristic deterioration of the positive temperature coefficient thermistor body. .
第１図（ａ）、第１図（ｂ）、第１図（ｃ）および第１
図（ｄ）は夫々本発明に係る正特性サーミスタの電極形
成方法の一実施例の工程説明図、第２図、第３図および
第４図は夫々本発明の他の適用例の説明図である。 11…正特性サーミスタ素体、12…主面、13…非オーミツ
ク性電極ペースト（13′…引出電極）、14…オーミツク
性電極ペースト（14′…主電極）、15…櫛歯状主電極。1 (a), 1 (b), 1 (c) and 1
FIG. 3D is a process explanatory view of an embodiment of an electrode forming method of a positive temperature coefficient thermistor according to the present invention, and FIGS. 2, 3, and 4 are explanatory views of other application examples of the present invention. is there. 11 ... Positive characteristic thermistor element body, 12 ... Main surface, 13 ... Non-ohmic electrode paste (13 '... Lead-out electrode), 14 ... Ohmic electrode paste (14' ... Main electrode), 15 ... Comb-shaped main electrode.
Claims (1)
ーストとオーミック性を有しない非オーミック性金属ペ
ーストとを使用した正特性サーミスタの電極形成方法で
あって、上記非オーミック性金属ペーストを正特性サー
ミスタ素体の電極引出部に塗布してこの非オーミック性
金属ペーストを焼き付けて非オーミック性電極を形成し
た後、上記焼き付けた非オーミック性電極の一部に重ね
てオーミック性金属ペーストを上記正特性サーミスタ素
体の電極形成部に塗布し、上記オーミック性金属ペース
トを上記電極形成部に焼き付けてオーミック性電極を形
成することを特長とする正特性サーミスタの電極形成方
法。1. A method for forming an electrode of a positive temperature coefficient thermistor using an ohmic metal paste having an ohmic property and a non-ohmic metal paste having no ohmic property, wherein the non-ohmic metal paste is a positive temperature coefficient thermistor element. The non-ohmic metal paste is applied to the electrode lead-out portion of the body and baked to form a non-ohmic electrode, and the ohmic metal paste is overlaid on a part of the baked non-ohmic electrode to form the positive temperature coefficient thermistor element. A method for forming an electrode for a positive temperature coefficient thermistor, which comprises applying an ohmic metal paste to the electrode forming part of a body and baking the ohmic metal paste on the electrode forming part to form an ohmic electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57158589A JPH0732083B2 (en) | 1982-09-10 | 1982-09-10 | Electrode forming method for positive temperature coefficient thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57158589A JPH0732083B2 (en) | 1982-09-10 | 1982-09-10 | Electrode forming method for positive temperature coefficient thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5947705A JPS5947705A (en) | 1984-03-17 |
| JPH0732083B2 true JPH0732083B2 (en) | 1995-04-10 |
Family
ID=15674986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57158589A Expired - Lifetime JPH0732083B2 (en) | 1982-09-10 | 1982-09-10 | Electrode forming method for positive temperature coefficient thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0732083B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012301A (en) * | 1998-06-24 | 2000-01-14 | Murata Mfg Co Ltd | Method for mounting electronic part |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5723402B2 (en) * | 1974-05-16 | 1982-05-18 | ||
| JPS5636101A (en) * | 1979-09-03 | 1981-04-09 | Hitachi Ltd | Method of forming electrode for barium titanate porcelain semiconductor |
-
1982
- 1982-09-10 JP JP57158589A patent/JPH0732083B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5947705A (en) | 1984-03-17 |
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