JPH0732147B2 - Wafer cleaning method - Google Patents
Wafer cleaning methodInfo
- Publication number
- JPH0732147B2 JPH0732147B2 JP56111882A JP11188281A JPH0732147B2 JP H0732147 B2 JPH0732147 B2 JP H0732147B2 JP 56111882 A JP56111882 A JP 56111882A JP 11188281 A JP11188281 A JP 11188281A JP H0732147 B2 JPH0732147 B2 JP H0732147B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- dust
- cleaning method
- wafer cleaning
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
Landscapes
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】 本発明はウェハ上に付着した不要物、即ちゴミをウェハ
から除く、ウェハの清浄方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for cleaning a wafer, in which unnecessary substances, that is, dust, attached on the wafer are removed from the wafer.
従来、ウェハ上のゴミを除去する方法としては、ウェハ
に窒素（N2）ガスを吹き付けてゴミを吹きとばす方法が
あったが、ゴミがウェハに対して静電的に付着している
場合にはこれを除去することが、かなり困難であった。Conventionally, the method of removing dust on the wafer has been to blow nitrogen (N 2 ) gas onto the wafer to blow it off. However, when dust is electrostatically attached to the wafer, Was very difficult to remove.
本発明は、従来のこのような欠点を解決して静電的に付
着したゴミまでも除去し得る方法を提供することを目的
とする。かかる目的は、本発明によればウェハを高周波
放電プラズマ中に置いてウェハ上に付着した不要物を帯
電させ、該ウェハに対向電極に対して負の直流電圧を引
加してウェハ上に付着した不要物を遊離させることを特
徴とするウェハの清浄方法により達成される。SUMMARY OF THE INVENTION It is an object of the present invention to provide a method capable of eliminating such conventional drawbacks and removing electrostatically attached dust. According to the present invention, the object is to place a wafer in a high-frequency discharge plasma to charge unnecessary substances attached to the wafer, apply a negative DC voltage to the counter electrode to the wafer, and attach it to the wafer. It is achieved by a method for cleaning a wafer, which is characterized in that the unnecessary substances are released.
以下、図面を用いて本発明の一実施例を説明する。An embodiment of the present invention will be described below with reference to the drawings.
図は本発明の実施例を適用した装置を示す断面図であ
る。The drawing is a sectional view showing an apparatus to which an embodiment of the present invention is applied.
ウェハ１にはゴミ２が付着しており、このウェハ１は電
極３と４の間で、テフロン等の絶縁物５で被覆された電
極４上に載置されている。Dust 2 is attached to the wafer 1, and the wafer 1 is placed between the electrodes 3 and 4 on the electrode 4 covered with an insulator 5 such as Teflon.
電極４には直流カット用のコンデンサ６と13.56MHzの高
周波電源７の直列回路と、高周波カット用のチョークコ
イル８と直流電源９の直列回路とが並列接続されて接地
されている。電極３も接地されている。A series circuit of a DC cutting capacitor 6 and a 13.56 MHz high frequency power supply 7 and a series circuit of a high frequency cutting choke coil 8 and a DC power supply 9 are connected in parallel to the electrode 4 and grounded. The electrode 3 is also grounded.
電極3,4やウェハ１を収容する容器10にはアルゴン（A
r）ガスが導入、排気されている。ここで、高周波電源
７により電極3,4間でプラズマ放電させると、ゴミ２は
電子により帯電する。The container 10 containing the electrodes 3 and 4 and the wafer 1 is filled with argon (A
r) Gas is being introduced and exhausted. Here, when plasma discharge is performed between the electrodes 3 and 4 by the high frequency power source 7, the dust 2 is charged with electrons.
次いで直流電源９により電極４に負の直流電圧を印加す
るとクーロン反発によりゴミ２はウェハから遊離する。
これにより、従来除去することが難かしかったゴミも容
易に除去することができる。Next, when a negative DC voltage is applied to the electrode 4 by the DC power supply 9, the dust 2 is released from the wafer due to Coulomb repulsion.
As a result, it is possible to easily remove dust that has been difficult to remove in the past.
図は本発明の一実施例を説明するための図である。 1:ウエハ、2:ゴミ（不要物）、3,4:電極、7:高周波電
源、9:直流電源The figure is a diagram for explaining one embodiment of the present invention. 1: Wafer, 2: Dust (unnecessary object), 3, 4: Electrode, 7: High frequency power supply, 9: DC power supply
Claims (1)
ェハ上に付着した不要物を帯電させ、該ウェハに対向電
極に対して負の直流電圧を引加してウェハ上に付着した
不要物を遊離させることを特徴とするウェハの清浄方
法。1. A wafer is placed in a high-frequency discharge plasma to charge unwanted substances deposited on the wafer, and a negative DC voltage is applied to the wafer to apply a negative DC voltage to the unwanted substances deposited on the wafer. A method for cleaning a wafer, which comprises releasing the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56111882A JPH0732147B2 (en) | 1981-07-17 | 1981-07-17 | Wafer cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56111882A JPH0732147B2 (en) | 1981-07-17 | 1981-07-17 | Wafer cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5814535A JPS5814535A (en) | 1983-01-27 |
| JPH0732147B2 true JPH0732147B2 (en) | 1995-04-10 |
Family
ID=14572511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56111882A Expired - Lifetime JPH0732147B2 (en) | 1981-07-17 | 1981-07-17 | Wafer cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0732147B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60154621A (en) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | Vacuum treatment |
| EP0419930B1 (en) * | 1989-09-26 | 1994-12-07 | Applied Materials, Inc. | Particulate contamination prevention scheme |
| US5328555A (en) * | 1992-11-24 | 1994-07-12 | Applied Materials, Inc. | Reducing particulate contamination during semiconductor device processing |
| CN1931453B (en) * | 2003-08-25 | 2013-06-19 | 东京毅力科创株式会社 | Method for purifying member in decompression process chamber and substrate processing apparatus |
| JP4745099B2 (en) * | 2006-03-28 | 2011-08-10 | 東京エレクトロン株式会社 | Substrate processing apparatus, transport pick cleaning method, control program, and computer-readable storage medium |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53124445A (en) * | 1974-01-22 | 1978-10-30 | Canon Inc | Developing fluid removing method |
| JPS5384563A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Thin film pattern forming method |
-
1981
- 1981-07-17 JP JP56111882A patent/JPH0732147B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5814535A (en) | 1983-01-27 |
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