JPH0736386B2 - Vapor phase growth equipment - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a vapor phase growth apparatus used for manufacturing a semiconductor device or the like, and particularly to a vapor phase growth apparatus having a structure suitable for processing a large number of substrates. It relates to the device.

[Prior art and its problems]

Conventionally, the generally used vapor phase growth apparatus is a so-called cold wall type horizontal type, vertical type, or barrel type.
In the horizontal type, the substrates are placed side by side on a rectangular flat plate-shaped susceptor arranged substantially horizontally so that the back surface of the susceptor is in close contact with each other. Similarly, the substrate is placed, and in the barrel type, the substrate is placed in close contact with the outer surface of the susceptor having a multi-sided cylindrical shape in the same manner as in the horizontal type and the vertical type, and the high frequency induction energy is applied to both. The susceptor is mainly heated by radiant energy and radiant energy, and the susceptor heats the substrate. In such a method in which the substrate is heated mainly by heating the susceptor, the number of substrates that can be processed at one time depends on the size of the susceptor surface, and the heating source is arranged almost uniformly over the entire susceptor. It is necessary to face each other, and therefore, the substrates are arranged on the upper plane in the horizontal type and the vertical type, and can be arranged only on the outer surface of the polygonal cylinder in the barrel type, so that the number of substrates processed at one time is relatively small. There were few.

On the other hand, in order to increase the number of sheets to be processed at one time, the substrates are placed in a nearly vertical shape on a horizontally arranged substrate holder, and the substrate is placed inside a hot wall type or bell jar where the bell jar body is the heating element. A method has been proposed in which a tubular heating unit is provided outside the group. In these methods, the heating section is provided only outside the high temperature space which is the processing chamber. Therefore, if the high temperature space is enlarged, the total heat capacity increases, and the heating time increases and the central portion and the outer side of the high temperature space increase. It had a defect that a temperature difference was likely to occur.

[Object of the Invention]

An object of the present invention is to increase the processing capacity and to make the temperature of the processing space and the flow of the reaction gas uniform so as to make the vapor phase growth layer uniform between the substrates.

[Outline of Invention]

The present invention provides a rotatable substrate holder for holding a plurality of substrates substantially vertically and radially in a reaction chamber, and heating plates provided above and below a group of substrates supported by the substrate holder, and the heating plates are provided from above and below from both sides. A gas supply / discharge means for heating the substrate group and flowing a reaction gas to the center or outside of the substrate group was provided, and the reaction gas was made to flow in the radial direction from the center or outside of the substrate group along each substrate. It is a thing.

〔Example〕

Hereinafter, the present invention will be described in detail with reference to Examples. FIG. 1 shows an embodiment of the vapor phase growth apparatus of the present invention. In FIG. 1, 1 is a base, on which a partition plate 2 made of quartz, an outer cylinder 3 and a lid 5 are provided. A reaction chamber 7 sealed by the sealing materials 4 and 6 is formed. A rotary shaft 14 which penetrates the base 1 and the partition plate 2 and is rotatably supported by the base 1 is provided in the lower portion of the reaction chamber 7, and a circular lower heating plate 10 made of carbon is provided on the shaft 14. ing. A substrate holder 12 having two rings made of, for example, quartz, which does not generate heat by radiation, is placed on the lower heat generating plate 10, and a plurality of substrates 13 to be processed are provided in the notched grooves on the upper portions of these rings. It is designed to fit vertically and radially. A circular upper heating plate 11 made of carbon and suspended from and fixed to the lid 5 is provided above the group of substrates A arranged in an annular shape. Below the partition plate 2, the RF that is the heating source of the lower heating plate 10 is used.
A coil 8 is provided, and a heating lamp 9 serving as a heating source for the upper heating plate 11 is provided above the lid 5 of the reaction chamber 7. twenty two
Is a reflector. A nozzle 16 for supplying or exhausting a reaction gas is attached to an upper portion of a pipe 15 which vertically penetrates a shaft center portion of a rotary shaft 14 of a lower heating plate 10. The nozzle 16 is located at the center of the annular substrate group A and has a plurality of holes 17 through which the reaction gas can be evenly blown outward or the ambient gas can be sucked and exhausted. . On the other hand, a distributor 19 having a plurality of holes 20 provided so as to face the nozzle 16 is provided inside the outer cylinder 3, and a plurality of pipes 18 for exhaust or air supply are connected to the distributor 19. is doing. Incidentally, the reaction gas supply and discharge means consisting of the nozzle 16 and the distributor 19, the nozzle 16 for air supply, the distributor 19 for exhaust,
Distributor 19
For supplying air, and for exhausting the nozzle 16 to determine one of the methods for flowing the reaction gas from the outer periphery toward the center,
If necessary, it is also possible to alternately switch the reaction gas within one batch of the process. Since the lower heating plate 10 and the upper heating plate 11 have separate heating sources 8 and 9 as described above, the heating temperature of the reaction chamber 7 and the heating temperature of the reaction chamber 7 should be controlled independently for uniformization. Has become. Further, for loading and unloading the substrate, the outer cylinder 3 of the reaction chamber 7 can be moved up and down together with the lid 5 and the heating lamp 9 with respect to the base 1 by an elevator device (not shown).

Next, the operation will be described.

First, the loading and unloading of the substrate 13 will be described. The processed substrate 13 was removed by lifting the outer cylinder 3, the lid 5 and the heating lamp 9 upward with respect to the base 1 by an elevator device (not shown). Then, the untreated substrate 13 is loaded into a predetermined groove on the substrate holder 12. This board
The loading and unloading of 13 may be performed together with the substrate holder 12. Then, the elevating device is driven to lower the outer cylinder 3, the lid 5 and the like to seal the reaction chamber 7 and bring the state shown in FIG. Then, the purge gas N ₂ is supplied from the nozzle 16 or the distributor 19 to replace the air in the reaction chamber 7 with the N ₂ gas, and then the rotating shaft 14 is rotated at a low speed while the H ₂ gas is flown from the nozzle 16 or the distributor 19. The heating is started by rotating and supplying power to the RF coil 8 and the heating lamp 9. When high-frequency power is supplied to the RF coil 8, the carbon-made lower plate 10 is induction-heated through the quartz partition plate, and the radiation emitted from the heating lamp 9 is transmitted through the quartz lid 5. Then, the upper heating plate 11 made of carbon is caused to generate heat. The upper heating plate 11 and the lower heating plate 10 are heated to a red-hot state or an incandescent state at approximately the same temperature, and the reaction chamber 7 is used as a heating space, and the substrate 13 placed in this heating space is uniformly and predeterminedly heated. Heat to temperature. When the substrate 13 is heated to the vapor growth temperature in this way, the etching gas is mixed into the already supplied H ₂ gas to clean the surface of the substrate 13, and then the reaction gas is mixed into the H ₂ gas. Then start vapor phase growth. This device is also characterized by the way gas flows. That is, using the nozzle 16 as a supply port, a distributor
There are cases where 19 is used as an exhaust port and where the distributor 19 is used as a supply port and the nozzle 16 is used as an exhaust port, both of which are horizontal and in a radial direction with respect to the upper and lower heat generating plates 10 and 11. This is because there is no other obstacle only in the substrate 13 between the air supply port and the air exhaust port, the gas flow is uniform, and it is effective in making the vapor phase growth layer more uniform. When vapor phase growth is completed, H ₂ gas is flown into the reaction chamber 7 and
The power supply to the RF coil 8 and the heating lamp 9 is cut off. In this way, when the temperature inside the reaction chamber 7 drops to a predetermined temperature, N ₂ gas is caused to flow instead of H ₂ gas, and after replacing the inside of the reaction chamber 7 with N ₂ gas,
The reaction chamber 7 is opened, the processed substrate 13 is removed, and a new substrate 13 to be processed is loaded. Hereinafter, the above-described operation is repeated cyclically.

FIGS. 2 and 3 show another embodiment of the substrate holder 12, and FIG. 2 shows the substrate 13 on the substrate holder 12 as shown in FIG. 4 or 5. Alternatively, the temperature stability of the substrate 13 is increased by erecting the SiC support plates 20 or 21 and loading the substrates 13 on both sides thereof.

FIG. 3 shows the reference numeral 12a in order to reduce the manufacturing cost of the substrate holder.
Shown is a case in which it is divided into 6 parts and installed on the lower heating plate 10 as shown in FIG. Division into 3 to 8 is also possible. Also in this case the substrate 13
Can be loaded in the manner shown in FIGS. 1, 4 and 5.

In the above-described embodiment, the substrate holder 12 is placed on the rotatable lower heating plate 10, but the lower heating plate 10 is separated by the partition plate 2.
Alternatively, the substrate holder 12 may be rotatably supported by the rotary shaft 14, and the heating sources of the upper and lower heat generating plates 10 and 11 are not limited to the above-mentioned embodiments, and various methods may be used. Can be adopted.

〔The invention's effect〕

As described above, according to the present invention, a large number of substrates can be processed without increasing the size of the reaction chamber, and the high temperature (reaction) space surrounding the substrates can be downsized to enable rapid heating, rapid cooling and soaking. In addition, since the gas flow is made horizontal and in the radial direction to make the contact of the gas with the substrate uniform, an accurate vapor phase growth layer can be obtained.

[Brief description of drawings]

FIG. 1 is a schematic sectional view showing an embodiment of the present invention, FIGS. 2 and 3 are plan views showing another embodiment of a substrate holder, and FIGS. 4 and 5 are implementations of FIG. It is a side view which shows each different example of the support plate in an example. 1 ... Base, 2 ... Partition plate, 3 ... Outer cylinder, 5 ... Lid, 7 ... Reaction chamber, 8 ... RF coil, 9 ... Heating lamp, 10 ... Lower heating plate, 11 ...... Upper heating plate, 13 ...... Substrate, 12,12a …… Substrate holder, 14 …… Rotary axis, 5 …… Tube,
16 ... Nozzle, 18 ... Tube, 19 ... Distributor, A ... Substrate group

Claims (1)

[Claims] 1. A rotatable substrate holder for holding a plurality of substrates to be processed in a reaction chamber in a substantially vertical and radial manner, and arranged below and above a substrate group held by the substrate holder, respectively. Vapor growth comprising a heating plate for heating the substrate group from both upper and lower sides, and a gas supply / exhaust means having a gas supply port and a gas exhaust port for flowing a reaction gas from the center of the substrate group to the outside or from the outside to the center apparatus.