JPH0736388B2 - CVD equipment - Google Patents

Description

TECHNICAL FIELD The present invention relates to a CVD apparatus.

[Conventional technology and its problems]

FIG. 11 shows a CVD apparatus (80) well in the first conventional example, and a plurality of wafers (90) are mounted, but the following problems are the same even if only one wafer is mounted.

The stage body (81) with the wafer (90) mounted on its surface, together with the earth shield (82), has a rotation transmission mechanism (9).
It is rotationally driven by a motor (86) via 1). The stage body (81) and the earth shield (82) have an insulator (8
3) electrically isolated by the stage body (8
1) DC or RF power introduction part (88) (rotational contact type, condenser coupling type, etc.)
RF power is applied. The vacuum seal during rotation and the prevention of center deviation of the rotary shaft are performed by a vacuum rotary seal (85) fitted in the opening of the vacuum chamber wall (84). (The O-ring seal, Wilson seal, magnetic fluid seal, or the like is used as the sealing method).

The stage body (81) is provided with a heating heater and / or a cooling water passage, and heater power and cooling water are introduced by an introduction portion (89) (rotary joint or the like). FIG. 12 shows a second conventional CVD apparatus (80) ', but the difference from the conventional CVD apparatus (80) in FIG. 11 is that the heater mechanism (92) is separated from the stage body (81). Is fixed to the vacuum chamber wall (84) and installed,
The mechanism related to rotation is the same. The parts corresponding to those in FIG. 11 are designated by the same reference numerals.

However, when RF power is applied to the stage body (81) to generate plasma by glow discharge in the vacuum chamber in the mechanism of FIG. 11 and the mechanism of FIG. 12 with the addition of the earth shield mechanism, the wafer (90) surface (stage body surface) Strictly speaking, the DC bias generated on the surface of the wafer (90) is slightly different, but in this document, it is regarded as the same and the explanation is advanced.) To make the effective DC bias variable, the RF power itself is changed. The only way to do this is to electrically change the impedance of the entire stage mechanism (capacitor, coil, resistance, etc.) in the RF power transfer circuit. Further, a mechanism for supplying electric power to the rotating body must be adopted in the DC or RF power introducing section (88), and there is a problem in terms of maintenance and inspection. Also, if there are characteristic changes in the capacitors, coils, and resistors that are the elements of the mechanism that changes the impedance, it is difficult to finely adjust the DC bias.

In addition, when processing such as film formation and etching is performed, not only the surface of the stage body (81) but also the entire surface of the earth shield (82) and the vacuum chamber wall (84) in FIG. 11 and the stage in FIG. Back side of body (81) and heater mechanism (92)
Film-forming substances, reaction gases and the like adhere to and are contaminated on the surface and the like, but in such a case, cleaning is difficult to perform. Further, in the case of FIG. 11, an appropriate reactive gas or inert gas is introduced into the vacuum chamber to direct plasma to the surface of the stage body (81).
Even if it is generated by applying RF (or DC) power and is cleaned, the surface of the stage main body (81) and the surface of the component material in the vicinity of being exposed to the plasma are cleaned, but the above-mentioned locations are hard to occur. (No plasma, or extremely low density).

Furthermore, in the conventional example of FIG. 11, the stage body (81) is rotated together with the earth shield (82), so that the weight of the rotating body is large and a motor (86) with a large rotational torque is required. Further, the shape of the stage main body (81) and the heater power and cooling water introduction part becomes complicated, and maintenance for removal is troublesome.

Further, in the above-mentioned conventional example, the mechanism of the stage main body, which is to be provided with the delivery mechanism for wafer transfer, becomes extremely complicated.

[Problems to be solved by the invention]

It is an object of the present invention to overcome the above-mentioned various drawbacks of the prior art all at once, and to provide a CVD apparatus having a simple structure and extremely high functionality.

[Means for solving problems]

According to the first aspect of the present invention, the above object is to provide an electrode member fixed to a wall portion of a decompression tank; a drive shaft through which the electrode member is slidably and rotatably inserted; A plate-shaped substrate holder that is fixed to the end of the substrate and mounts the substrate on the upper surface; a first linear drive device for driving the drive shaft in the axial direction; a rotary drive device for rotating the drive shaft; A substrate lift pin that is slidably inserted in each of a plurality of through-holes formed in the electrode member and is normally located below the upper surface of the electrode member; the substrate lift pin is used when the substrate is replaced. Second for driving vertically up and down
A linear driving device; an opening formed in the substrate holder so as to be respectively aligned with the plurality of through holes of the electrode member, and into which the substrate lift pin can be inserted.
Achieved by CVD equipment.

Further, according to the second aspect of the present invention, the above object is such that an electrode member fixed to a wall portion of a decompression tank; a drive shaft through which the electrode member is slidably and rotatably inserted; the decompression tank of the drive shaft. A plate-shaped substrate holder that is fixed to the end portion on the side and mounts a substrate on the upper surface; a first linear drive device for driving the drive shaft in its axial direction; a rotary drive device for rotating the drive shaft; A substrate lift pin that is slidably inserted in each of a plurality of through holes formed in a side portion of the decompression tank or a member fixed to the decompression chamber, and is normally located below the upper surface of the electrode member; A support arm fixed substantially vertically to the end of the decompression tank; a second linear drive device for vertically moving the substrate lift pin in the axial direction when the substrate is exchanged; a tip of the support arm The electrode to house the part A plurality of first notches formed on the outer peripheral edge of the material; formed on the outer peripheral edge of the substrate holder so as to be aligned with the tip of the support arm, and freely passable when the tip of the support arm is aligned And a plurality of second cutouts; which is a CVD apparatus.

[Action]

By moving the substrate holder that supports the substrate (wafer) relative to the electrode member (where RF voltage is applied) and changing the distance between them,
The DC bias can be changed.

Since the DC bias can be changed according to the distance, the adjustment is easy, and it may be unnecessary to use the rotary joint mechanism in the RF power unit as in the conventional example. Therefore, the interval between maintenance and inspection of the entire structure can be shortened.

Also, when the distance between the electrode member and the substrate holder is less than or equal to a predetermined value, plasma is generated above the substrate holder or in a space on the opposite side of the substrate holder from the electrode member. The surface to be supported and each member in the vicinity thereof are cleaned with plasma.

Next, when the distance between the electrode member and the substrate holder is set to a predetermined value or more, plasma is transferred into the space between the electrode member and the substrate holder, and mainly the back surface of the substrate holder and the upper surface of the electrode member (conventional cleaning). The hard part) is cleaned by plasma. Of course, at this time, other parts covered by the plasma are also cleaned.

Further, since the substrate holder is plate-shaped, it is not necessary to rotate the earth shield or the electrode member together as in the first conventional example, and it is sufficient to rotate only such a lightweight substrate holder. The load of can be reduced. The rotation of the substrate holder provides the uniformity of the thin film formed on the wafer placed on the substrate holder, as in the conventional case.

After the desired thin film is formed on the substrate, if the second linear drive device is driven, the substrate lift pin or the support arm moves up, and the substrate can be received by this. If this is done, it can be received and transported by this fork.

〔Example〕

Hereinafter, a CVD apparatus according to an embodiment of the present invention will be described with reference to the drawings.

FIG. 1 shows the entire CVD apparatus of this embodiment. In the figure, a reaction gas introduction nozzle (2) is attached to one end wall of a vacuum chamber (1) which is a decompression chamber, and the other end side thereof is attached. An exhaust hole (3) is formed in the bottom wall of the. The exhaust hole (3) is connected to an exhaust device (not shown) via an exhaust pipe (4) and a main duct (5). Further, an opening (70) for taking out the wafer is formed on the other side wall portion, and the opening (70) can be opened and closed by an airtight gate valve (not shown).

A vertical rotation drive mechanism (6) according to the present invention is arranged below the vacuum chamber (1), and a cover (7) covers it. These are fixed to the vacuum tank (1), and the vacuum tank (1) is fixed to the mount (60) (partially shown) by bolts (61).

As clearly shown in FIGS. 2 and 3, a susceptor (9) which is a disk-shaped substrate holder faces the inside of the vacuum chamber (1), and a stage main body (8) which is an electrode member is located immediately below this. ) Is provided, and at its outer peripheral edge portion, it is airtightly fixed to the earth shield body (10) arranged concentrically with the insulating flange (11) with bolts (12). The earth shield body (10) is hermetically fixed to the bottom wall portion (14) of the vacuum chamber (1) by a bolt (43) at the outer peripheral edge portion. A quartz ring (13) is attached to the upper surface of the earth shield (10).

A drive shaft (15) is integrally fixed to the susceptor (9) at the center thereof, and a vacuum having a bellows (16) is inserted through the center hole (8a) of the stage body (8). It is rotatably and rotatably supported by the rotary seal device (17). The vacuum rotary seal device (17) further has a pair of upper and lower bearings (18a) (18b), which are used to drive the drive shaft (1
5) The bearings (18a) are supported.
The bearing case (19) fitted with (18b) is fixed to the intermediate mounting plate (20) at the lower end.

A pulley (21) is fixed near the lower end of the drive shaft (15), and a motor (25) is fixed to a lower stage mounting plate (26) located below this via a contact plate (27). . The motor (25) is fixed via the contact plate (27). The plate (27) is fixed to the motor (25) with bolts (51),
As shown in Fig. 5, the corresponding plate (27) has its vertical portion (27a).
Is fixed to the lower mounting plate (26) by being fixed to the angle member (120) with bolts (121). A pulley (23) is fixed to the tip of the rotary shaft (24) of the motor (25) by a key (122) and a hexagon socket set screw (123), and between the pulley and the pulley (21). A timing belt (22) is wound around.

A base plate (28) is further disposed below the lower mounting plate (26), and as shown in FIGS. 3 to 5, three guide shafts are arranged at equal angular intervals. It is fixed integrally with the upper stage body (8) by (35). The screw part (38a) at the upper end of the guide shaft (35) is screwed and fixed in the screw hole of the stage body (8), and the screw part (38a) at the lower end is
A nut (124) is screwed and fastened to b) to be fixed to the base plate (28). Linear ball bearings (36) (37) are fixed to the upper mounting plate (39), the intermediate mounting plate (20), and the lower mounting plate (26) to guide the guide shaft (35) slidably. As a result, the upper mounting plate (39), the intermediate mounting plate (20), and the lower mounting plate (26) can be accurately moved up and down along the guide shaft (35).

An air cylinder device (29) is fixed to the base plate (28), and a tip portion of a drive rod (30) thereof is fixed to a lower mounting plate (26) by a bolt (31). Drive shaft (15)
The lower end of the shaft is inserted through the opening (26a) of the lower mounting plate (26), and the shaft water cooling introducing device (50) is attached thereto. This is mainly composed of a rotary union, and although not shown in the figure, the refrigerant is introduced from this and is supplied to the hollow portion of the stage body (8) through the hollow portion of the drive shaft (15), and further the drive shaft. It circulates through the other hollow part of (15). (The arrows show the introduction and derivation of the refrigerant.) Wafer lift pins (40) are attached to the upper mounting plate (39).
As shown in FIG. 4, three of them are screwed and fixed at their lower ends, and their upper ends are inserted through through holes (8b) formed in the peripheral edge of the stage body (8). A bellows (41) is stretched between the bottom of the stage body (8) and the upper mounting plate (39) so as to cover the wafer lift pins (40). As a result, the wafer lift pins (40) are kept in a state of being shielded from the atmosphere.

A wafer vertical drive cylinder device (32) is further fixed to the base plate (28), and the tip end of the drive rod (33) is connected to the upper mounting plate (39) via a link ball (34). .

As shown in FIG. 2, the susceptor (9) is formed with three elongated holes (42) at equal angular intervals around the center thereof, which are circles on which the above-mentioned wafer lift pins (40) are arranged. It is arranged on the same circumference as the circumference, as shown in FIG. 2, by rotating the susceptor (9) with respect to the stage body (8). Although the wafer is not shown in each figure, the wafer mounted on the susceptor (9) is driven by the wafer vertical drive cylinder device (32) to raise the drive rod (33), and thus the upper mounting plate (39). )
Also, the wafer lift pins (40) are adapted to push the wafer up when raised. The susceptor (9) is rotationally driven by the motor (25), and the rotational positioning means (102) for stopping the elongated hole (42) at a position aligned with the wafer lift pin (40).
Is arranged below the pulley (21).

Further, the upper end of the sensor mounting column (44) is fixed to the outer peripheral edge of the stage body (8), and the sensors (45) and (62) are mounted on this, and the sensor (45) is mounted on the lower stage. The rising position of the plate (26), and thus the rising position of the susceptor (9), is detected, and the sensor (62) detects the upper mounting plate (3).
9) Therefore, the lifted position of the wafer lift pin (40) is detected.

As schematically shown in FIG. 3, RF power is supplied to the stage body (8) from the RF power supply unit (100) via the electric path (101).

The embodiment of the present invention has been described above. Next, the operation, effect and the like will be described.

Although not shown, it is assumed that a wafer or substrate is placed on the susceptor (9). Further, it is assumed that the inside of the vacuum chamber (1) is exhausted to a desired pressure and the gas gas necessary for generating plasma by glow discharge is introduced up to a predetermined pressure.

When the air cylinder device (29) is driven, the drive rod (3
0) rises, lower mounting plate (26), intermediate mounting plate (2
0), through which the bearing casing (19) and the bearings (18a) (18b) rise, the integral drive shaft (15) rises. Therefore, the susceptor (9) integral with this also rises, and the distance d from the upper surface of the stage body (8) increases. An AC (high frequency) voltage is applied to the stage body (8).

8A, 8B, 8C show the relationship between the change of d at this time, the generation state of plasma P (glow discharge), and the potential V generated in the susceptor (9) or the wafer W thereon. In FIG. 8A, d is as small as d ₁ , but DC bias voltage Vdc ₁
Is relatively large. As shown in FIG. 8B, when d increases to d ₂ , the DC bias voltage Vdc ₂ decreases. However, in any case, the plasma P is above the susceptor (9), but when d is further increased as shown in FIG. 8C, the plasma P is transferred between the susceptor (9) and the stage body (8). . That is, the potential applied to the susceptor (9) and the DC bias voltage can be changed according to the ascending distance d, and the generation state of the plasma P is greatly changed as shown in FIG. 8C when d is further increased. be able to.

Generally, an RF bias is applied to the wafer during processing such as sputtering, etching, and P-CVD, and an appropriate DC bias voltage is supplied to the wafer to achieve processing effects on film quality, step coverage, etching anisotropy, etc. However, in the past, this was done by electrical adjustment. However, according to this embodiment, the DC bias voltage can be easily changed by moving the susceptor (9) up and down to change the vertical distance d from the stage body (8).

Therefore, in this embodiment, the rising position of the susceptor (9) is determined in consideration of the quality of the film formed on the surface of the wafer placed on the susceptor (9) and other characteristics. The intermediate mounting plate (20) and the lower mounting plate (26) are
Guided by 5) and rise. Therefore, the drive shaft (15) ascends along the guide shaft (35) accurately without eccentricity, and when the drive shaft (15) reaches a predetermined height, the sensor (45) attached to the sensor mounting column (44) moves it. Detects and supplies this detection signal to the air cylinder device (29). As a result, the driving of the air cylinder device (29) is stopped, and the susceptor (9) is stopped at a height apart from the stage body (8) by a predetermined distance.

Then, the motor (25) is driven. This rotational force is transmitted through the timing belt (22) and pulley (21) to the drive shaft (15).
And the susceptor (9) is rotated. A reaction gas is introduced into the vacuum chamber (1) from the reaction gas introduction nozzle (2), and a thin film composed of the components of the reaction gas is uniformly rotated on the surface of the wafer placed on the susceptor (9). Formed in thickness.

When the thin film having a predetermined thickness is formed, the introduction of the reaction gas is stopped and the driving of the motor (25) is stopped. That is, the rotation of the susceptor (9) is stopped. Next, the air cylinder device (29) is driven, the drive rod (30) is lowered, the susceptor (9) is lowered, and the air cylinder device (29) is stopped by the detection signal of the sensor (45). Therefore, the susceptor (9) assumes the position shown in FIG.

When the drive of the motor (25) is stopped, the rotation positioning means (102) stops the rotation of the susceptor (9) at an angular position where the elongated hole (42) is aligned with the lower wafer lift pin (40).

Next, the wafer up-down drive cylinder device (32) is driven, and the upper mounting plate (39) is raised. Therefore, the wafer lift pins (40) are raised together and protrude from the long holes (42) of the susceptor (9) to push up the wafer. Although not shown, the transfer fork introduced into the vacuum chamber (1) through the opening (70) is inserted under the wafer, and then the fork is slightly lifted to separate the wafer from the wafer lift pin (40). Then, the wafer is received and led out to an adjacent take-out chamber through an opening (70) formed in one side wall of the vacuum chamber (1).

In the unloading chamber, the next wafer is placed on the fork, transferred from the opening (70) into the vacuum chamber (1), stopped on the protruding wafer lift pin (40), and then the fork is lowered to move the wafer. Wafer Lift Pin (40)
Place on top. The fork further descends slightly and then retreats from the opening (70) into the extraction room.

Next, the wafer vertical drive cylinder device (32) is driven to lower the wafer lift pin (40) to the position shown in FIG. Thus, the wafer is placed on the susceptor (9). The sensor (62) detects the lowered position, and the detection signal causes the wafer vertical drive cylinder device (32) to stop driving. Hereinafter, the above operation is repeated again.

Next, the cleaning action of the susceptor (9) according to the present invention will be described.

In this case, the wafer is not placed on the susceptor (9), but at the position shown in FIG. 8A or 8B, the susceptor (9) and members close thereto, such as the wall of the vacuum chamber (1). Are cleaned by the impact of plasma P.
However, at this time, the plasma P is generated on the back surface of the susceptor (9) and the stage body (8) as shown in FIGS.
Does not exist near the upper surface of the
These parts are not cleaned.

Next, the air cylinder device (29) is driven to further raise the susceptor (9). Then, when d exceeds a predetermined value, the existing region of the plasma P changes greatly, and as shown in FIG. 8C, it is interposed between the susceptor (9) and the stage body (8). Therefore, the back surface of the susceptor (9), the upper surface and side surfaces of the stage body (8), and the wall portion of the vacuum chamber (1) which have not been cleaned up to now can be cleaned by plasma.

Since it is not necessary to introduce the reaction gas in the plasma generation at this time, the film-forming substance or the reaction gas is not deposited and contaminated by the plasma at other places.

During the film formation and etching process, the wafer lift pins (40), which are part of the wafer transfer means, are located below the upper surface of the stage body (8), so film formation on the wafer lift pins (40). There is no possibility that substances, reaction gases, etc. will adhere and accumulate to contaminate, and at the time of contact, this contaminant will adhere to the wafer from the wafer lift pins (40),
The wafer is never contaminated.

The present embodiment has the above-described actions and effects, but also has the following effects.

That is, if the bolts (43) are removed, the earth shield body (10), the stage body (8), and the vertical rotation drive mechanism (6) below the susceptor (9) can be removed at once. Therefore, some kind of maintenance, inspection, and other replacement of members can be performed extremely quickly.

Further, since only the plate-shaped susceptor (9) is driven to rotate, it is possible to reduce the load on the motor (25) without rotating the heavy earth shield unlike the conventional example shown in FIG. The vertical rotation drive mechanism (6) can be downsized, and since the wafer lift pins (40) are provided in the vertical rotation drive mechanism (6), wafer replacement can be performed without complicating the mechanism. Can be done easily.

9 and 10 show another embodiment of the present invention, the portions corresponding to those in the above embodiment are designated by the same reference numerals.

That is, this embodiment is different from the above embodiment mainly in the heating method of the wafer W and the lifting method of the wafer W.

A heater assembly (111) arranged on the atmosphere side of the stage body (115) at equal angular intervals through a mounting member (113).
Is fixed, this is an infrared lamp as a heater (112)
Is equipped with. The stage body (115) has a plurality of openings (115b) corresponding to these heater assemblies (111).
A window glass (116) made of, for example, quartz, which is made of a transparent material that absorbs little infrared rays, is hermetically fitted to these.

As shown in FIG. 10, three wafer lift pins (117) are arranged at equal angular intervals on the extension (39b) of the upper mounting plate (39) 'on which the linear ball bearing (37) is mounted.
It is fixed and its tip (117a) is inside the vacuum chamber (1), to which the horizontal arm (119) is fixed. Upper mounting plate (39) 'and bottom wall (14) of vacuum chamber (1)
A bellows (118) is disposed between the wafer lift pin (117) and the wafer lift pin (117) so that the wafer lift pin (117) is airtight but slidably movable in the vacuum chamber (1). Through the bottom wall (14) of the.

A notch (115a), which is a first notch, is formed on the outer peripheral edge of the stage body (115) in correspondence with the mounting position of the wafer lift pin (117), and the tip of the horizontal arm (119) ( 119a) is housed. Also, the susceptor (11
Notch (115a) as shown in Fig. 10 also in 0)
A second notch (110a), which is a second notch, is formed at the same angular interval as the notch (115a) and can be aligned with the notch (115a) as shown in FIG. The susceptor (110) can be stopped at this alignment position by the rotational positioning means (102) described in the first embodiment. Further, as shown in FIG. 10, the outer peripheral edge portion of the wafer W placed on the susceptor (110) is the tip portion (119a) of the horizontal arm (119).
It should be located more radially outward.

The rest of the configuration of this embodiment is exactly the same as that of the first embodiment, but the operation and effects are almost the same, so only the differences will be described below.

Similar to the first embodiment, while the susceptor (110) is rotated, a thin film is uniformly formed on the wafer W placed on the susceptor (110). During this formation, the wafer W is heated by infrared rays from the heater assembly (111) (directly if the susceptor (110) is made of a transparent material, otherwise by heat transfer), and a good quality thin film is formed. It is formed.

When a thin film with a predetermined thickness is formed, the susceptor (110)
Rotation is stopped. The rotation positioning means (102) similar to that of the first embodiment stops the susceptor (110) by aligning the notch (110a) with the notch (115a) of the stage body (115).

Next, if the susceptor (110) has been raised by the air cylinder device (29) shown in FIG. 3 of the first embodiment, it is lowered by this drive and the position shown in FIG. 9 is taken. . Then, the wafer vertical drive cylinder device (32) shown in FIG. 6 of the first embodiment is driven,
The upper mounting plate (39) 'shown in FIG. 9 is raised. This causes the wafer lift pins (117) to rise from the position shown in FIG. In FIG. 9, the stage body (115)
Notches (115a) and susceptor (110) notches (110
a) and are shown as aligned.

As the wafer lift pins (117) rise, the horizontal arm (119) also rises, and the wafer W is lifted by these three horizontal arms (119) (see FIG. 10). When the wafer is lifted up to a predetermined height, the driving of the wafer up-down drive cylinder device (32) is stopped. Next, a fork (not shown) is introduced through the opening (70) shown in FIG. 1, and after it is positioned below the wafer W, it is lifted slightly to lift the wafer W and retracts through the opening (70) into the take-out chamber. To do. Here, the next wafer W is replaced, and the wafer W is introduced into the vacuum chamber (1) by a fork and lowered to place a new wafer W on the horizontal arm (119). The fork retreats through the opening (70) into the unloading chamber, and the wafer lift pin (117) is driven again by driving the wafer vertical drive cylinder device (32).
Moves down to the position shown in FIG. 9, and the wafer W is placed on the susceptor (110).

The cleaning action and the DC bias adjusting action are performed in the same manner as in the first embodiment. In this case, since the window glass (116) made of transparent quartz is sufficiently cleaned, its transparency can be secured again. Although omitted in the description of the configuration, in the case of the present embodiment, it is assumed that the stage body (115), the heater assembly (111), and other necessary parts are cooled.

Although the respective embodiments of the present invention have been described above, the present invention is not limited to these and various modifications can be made based on the technical idea of the present invention.

For example, in the above embodiments, the case where a thin film is formed on a wafer by a vacuum low pressure CVD apparatus has been described, but the present invention is not limited to this, and the present invention can be applied to a wide range of substrate surface treatment apparatuses such as sputtering, plasma etching, and P-CVD apparatus. Is applicable.

〔The invention's effect〕

As described above, according to the CVD apparatus of the present invention, it is possible to maintain a vacuum and easily clean the back surface of the substrate holder and other parts and members that were difficult to be cleaned by the conventional method. You can Also, the DC bias to the substrate can be changed purely mechanically, overcoming various drawbacks associated with conventional electrical methods and devices.

Further, it is possible to reduce the load on the rotary drive device, and it is possible to achieve various effects such that the rotary drive device can be installed in the decompression tank and can be easily removed therefrom. Furthermore, the surface-treated substrate can be easily carried out, and a new substrate can be easily brought onto the substrate holder.

[Brief description of drawings]

1 is a partially cutaway front view of a CVD apparatus according to an embodiment of the present invention, FIG. 2 is a sectional view taken along line II-II in FIG. 1, and FIG.
The drawing is a sectional view taken along the line III-III in FIG. 2, FIG. 4 is a sectional view taken along the line IV-IV in FIG. 3, FIG. 5 is a sectional view taken along the line VV, and FIG. 6 is shown in FIG. VI-VI line sectional view, FIG. 7 is a partially cutaway perspective view of the main part of this CVD apparatus, FIG.
FIG. 9 is a schematic view of a main part showing the operation of this embodiment and a graph showing a voltage. FIG. 9 is a sectional view of the main part of a CVD apparatus of another embodiment.
FIG. 10 is a plan view of the same, FIG. 11 is a side view of a conventional CVD apparatus, and FIG. 12 is a side view of another conventional CVD apparatus. In the figure, (8) …… Stage body (9) …… Susceptor (15) …… Rotating shaft (25) …… Motor (29) …… Air cylinder device (32) …… Wafer vertical drive cylinder device (40 ) (117) …… Wafer lift pin (119) …… Horizontal arm

Claims (8)

[Claims] 1. An electrode member fixed to a wall of a decompression tank; a drive shaft which slideably and rotatably passes through the electrode member; a substrate fixed to an end of the drive shaft on the decompression tank side and a substrate on an upper surface thereof. A plate-shaped substrate holder to be mounted; a first linear drive device for driving the drive shaft in the axial direction; a rotary drive device for rotating the drive shaft; a plurality of through holes formed in the electrode member. Substrate lift pins that are slidably inserted into each of which are usually located below the upper surface of the electrode member; a second straight line for vertically driving the substrate lift pins in the axial direction when the substrate is replaced. A CVD apparatus comprising: a driving device; an opening formed in the substrate holder so as to be aligned with the plurality of through holes of the electrode member and into which the substrate lift pin can be inserted. 2. The rotary drive device is fixed to a vacuum rotary seal device that vacuum-seals the drive shaft and rotatably supports the drive shaft, and the first and second linear drive devices are a common base plate. The first linear drive device linearly drives the vacuum rotary seal device, thereby linearly driving the drive shaft therethrough. CVD apparatus described in. 3. The base plate to which the first and second linear drive devices are attached is integrally connected to a wall portion of the electrode member or the pressure reducing tank by a guide shaft, and the guide shaft is linear by a linear bearing. The CVD apparatus as described in the above item 2, wherein the CVD apparatus is supported so as to be slidable. 4. The CVD apparatus according to any one of claims 1 to 3, wherein a refrigerant or a heat medium is circulated and supplied to the hollow portion of the drive shaft via a rotary join mechanism. 5. An electrode member fixed to the wall of the decompression tank; a drive shaft that slidably and rotatably passes through the electrode member; a substrate fixed to the end of the drive shaft on the decompression tank side and a substrate on the upper surface. A plate-shaped substrate holder to be mounted; a first linear drive device for driving the drive shaft in the axial direction; a rotary drive device for rotating the drive shaft; and a side part of the decompression tank or fixed to the side part. A substrate lift pin that is slidably inserted in each of a plurality of through holes formed in the member, and is normally located below the upper surface of the electrode member; a direction substantially perpendicular to the end of the substrate lift pin on the pressure reducing tank side. A support arm fixed to the second linear drive device for vertically moving the substrate lift pin in the axial direction when the substrate is exchanged; and an electrode member outside the electrode member for accommodating the tip of the support arm. Multiple edges formed on the periphery 1 notch; formed on the outer circumferential edge portion of the distal end portion and alignable with said substrate holder of said support arm,
A CVD apparatus comprising: a plurality of second notches that are freely passable when the tips of the support arms are aligned. 6. The rotary drive device is fixed to a vacuum rotary seal device that vacuum-seals the drive shaft and rotatably supports the drive shaft, and the first and second linear drive devices are a common base plate. And the first linear drive device linearly drives the vacuum rotary seal device, thereby linearly driving the drive shaft therethrough. CVD apparatus described in. 7. The base plate to which the first and second linear drive devices are attached is integrally connected to a wall portion of the electrode member or the pressure reducing tank by a guide shaft, and the guide shaft is linear by a linear bearing. 7. The CVD apparatus according to the above item 6, which is supported so as to be slidable. 8. The CVD apparatus according to any one of claims 5 to 6, wherein a refrigerant or a heat medium is circulated and supplied to the hollow portion of the drive shaft via a rotary join mechanism.