JPH0736453B2 - Metal-insulator-metal element - Google Patents
Metal-insulator-metal elementInfo
- Publication number
- JPH0736453B2 JPH0736453B2 JP61133735A JP13373586A JPH0736453B2 JP H0736453 B2 JPH0736453 B2 JP H0736453B2 JP 61133735 A JP61133735 A JP 61133735A JP 13373586 A JP13373586 A JP 13373586A JP H0736453 B2 JPH0736453 B2 JP H0736453B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- film
- insulator
- type carbon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Liquid Crystal (AREA)
Description
【発明の詳細な説明】 （技術分野） 本発明は、金属−絶縁物−金属（Metal-Insulator-Meta
l;以下Ｍ−Ｉ−Ｍと略記する）構造を有する素子に関す
るものである。TECHNICAL FIELD The present invention relates to a metal-insulator-metal.
l; hereinafter abbreviated as M-I)).
（従来技術） Ｍ−Ｉ−Ｍ構造を有する素子として、ダイオードがよく
知られており、このＭ−Ｉ−Ｍ型ダイオードは、液晶駆
動用スイッチング素子等への応用が期待されている。従
来、このＭ−Ｉ−Ｍ構造は、Ta-Ta2O5‐TaあるいはAl-A
l2O3‐Al等で構成されており、いずれも絶縁物として金
属酸化物が使用されている（例えば特開昭58-79281号公
報参照）。(Prior Art) A diode is well known as an element having an M-I-M structure, and this M-I-M type diode is expected to be applied to a liquid crystal driving switching device or the like. Conventionally, this M-I-M structure is based on Ta-Ta 2 O 5 -Ta or Al-A.
It is composed of l 2 O 3 -Al and the like, and metal oxides are used as insulators in all of them (see, for example, JP-A-58-79281).
しかしながら、この金属酸化物は、熱酸化法や陽極酸化
法で形成されるのが一般的であり、加熱工程を必要とす
るため、例えばPETなどプラスチックフィルム上にＭ−
Ｉ−Ｍ型ダイオードを形成することは困難である。例え
ば、Taを酸素中で熱酸化するためには、400〜500℃に加
熱する必要があり、基板は石英等の耐熱材料に限られ
る。また、陽極酸化法は、比較的低温で酸化物を形成で
きるが、酸化剤、反応条件の最適化が難しく、さらに陽
極酸化後に150℃程度のアニールを施して酸化物の改質
を行なう必要がある。この他に、プラズマ酸化、酸素イ
オンの打ち込み等の酸化法も用いられているが、これら
の場合も酸化膜の不均一性や、金属−酸化膜の界面状態
の不均一性が問題となる。However, this metal oxide is generally formed by a thermal oxidation method or an anodic oxidation method, and requires a heating step. Therefore, for example, M-on a plastic film such as PET.
It is difficult to form an IM diode. For example, in order to thermally oxidize Ta in oxygen, it is necessary to heat it to 400 to 500 ° C., and the substrate is limited to a heat resistant material such as quartz. Further, although the anodizing method can form an oxide at a relatively low temperature, it is difficult to optimize the oxidizing agent and the reaction conditions, and it is necessary to anneal at about 150 ° C after the anodizing to modify the oxide. is there. In addition to these, oxidation methods such as plasma oxidation and implantation of oxygen ions are also used, but in these cases, nonuniformity of the oxide film and nonuniformity of the metal-oxide film interface state pose a problem.
このように従来法では、基板材料が耐熱材料に限られる
とともに、工程が複雑で、また酸化膜や金属−酸化膜界
面状態の不均一性に起因して素子のＩ−Ｖ特性が良好な
ダイオード特性にならなかったり、素子間で特性がばら
つくという問題があった。As described above, in the conventional method, the substrate material is limited to the heat-resistant material, the process is complicated, and the diode having a good IV characteristic of the device due to the non-uniformity of the oxide film or the metal-oxide film interface state. There was a problem that the characteristics were not obtained or the characteristics were varied among the elements.
（発明の目的） 本発明は、上記問題点に鑑みてなされたもので、絶縁物
として新規の材料を使用することにより、室温で、しか
も再現性よく製造することができるＭ−Ｉ−Ｍ型構造の
素子を提供するものである。(Object of the invention) The present invention has been made in view of the above problems, and by using a novel material as an insulator, it can be manufactured at room temperature and with good reproducibility. A structural element is provided.
（発明の構成） 上記目的を解決するために、絶縁物として、ｉ型カーボ
ンを使用する。(Structure of the Invention) In order to solve the above object, i-type carbon is used as an insulator.
以下、実施例を用いて本発明を詳細に説明する。Hereinafter, the present invention will be described in detail with reference to examples.
（実施例） 第１図は、本発明の一実施例を示したもので、１はPET
フィルム等からなる基板、２は金属電極膜、３はｉ型カ
ーボン膜、４は金属電極膜である。(Embodiment) FIG. 1 shows an embodiment of the present invention, in which 1 is PET.
A substrate made of a film or the like, 2 is a metal electrode film, 3 is an i-type carbon film, and 4 is a metal electrode film.
第２図は、その製造方法を示したものである。まず、基
板１上にAl,NiCr,Taなどの金属電極膜２を、蒸着あるい
はスパッタリング等で形成する。その金属電極膜２上に
レジスト膜５を形成し（第２図（ａ））、これをマスク
としてエッチングして金属電極膜２をパターン化する
（第２図（ｂ））。次に、ｉ型カーボン膜３を20〜100
Åの膜厚で形成する（第２図（ｃ））。さらにその上に
Al等の金属電極膜４を形成する（第２図（ｄ））。なお
ｉ型カーボン膜３をパターン化する場合は、金属電極膜
４を形成する前に、所要のパターンのレジスト膜５を形
成し（第２図（ｅ））、エッチングした後（第２図
（ｆ）），金属電極膜４を形成する（第２図（ｇ））。FIG. 2 shows the manufacturing method. First, the metal electrode film 2 of Al, NiCr, Ta or the like is formed on the substrate 1 by vapor deposition or sputtering. A resist film 5 is formed on the metal electrode film 2 (FIG. 2A), and the metal electrode film 2 is patterned by etching using this as a mask (FIG. 2B). Next, the i-type carbon film 3 is replaced with 20 to 100
It is formed with a film thickness of Å (Fig. 2 (c)). On top of that
A metal electrode film 4 of Al or the like is formed (FIG. 2 (d)). When patterning the i-type carbon film 3, a resist film 5 having a desired pattern is formed (FIG. 2E) before forming the metal electrode film 4, and after etching (FIG. f)), and the metal electrode film 4 is formed (FIG. 2 (g)).
ｉ型カーボン膜３の成膜は、第３図に示すようなプラズ
マCVD装置を使用する。チャンバー11内に一対の平行板
電極12,13を設け、一方の電極13上に基板１をセットす
る。ガス導入口14より原料ガスをチャンバー内に導入
し、一方真空ポンプによって排気することでチャンバー
11内を一定圧力に保持する。一対の電極12,13間に高周
波電力を印加し、グロー放電を発生させることにより、
原料ガスが分解し、基板１上にｉ型カーボンが堆積す
る。なお基板１はヒータ15により任意の温度に加熱する
ことも可能である。The i-type carbon film 3 is formed by using a plasma CVD apparatus as shown in FIG. A pair of parallel plate electrodes 12 and 13 is provided in the chamber 11, and the substrate 1 is set on one electrode 13. The raw material gas is introduced into the chamber through the gas inlet 14, while the gas is exhausted by the vacuum pump.
Maintain a constant pressure inside 11. By applying high-frequency power between the pair of electrodes 12 and 13 to generate glow discharge,
The raw material gas is decomposed and i-type carbon is deposited on the substrate 1. The substrate 1 can be heated to any temperature by the heater 15.
高抵抗（ρ≧1010Ω・cm）のｉ型カーボン膜が得られる
条件は、CH4流量;1〜10sccm、H2流量;10〜100sccm、CH4
/H2;2〜30容量％、圧力;0.01〜0.1Torr、RFパワー;20〜
100W、基板温度；室温であった。特にρ≧1013Ω・cmが
得られるのは、CH4/H2が５容量％、CH4流量が5sccm、圧
力が0.02Torr、RFパワーが50W、基板温度が室温という
各条件であった。The conditions for obtaining a high resistance (ρ ≧ 10 10 Ω · cm) i-type carbon film are as follows: CH 4 flow rate: 1 to 10 sccm, H 2 flow rate: 10 to 100 sccm, CH 4
/ H 2 ; 2 to 30% by volume, pressure; 0.01 to 0.1 Torr, RF power; 20 to
100W, substrate temperature; room temperature. In particular, ρ ≧ 10 13 Ω · cm was obtained under the conditions that CH 4 / H 2 was 5% by volume, CH 4 flow rate was 5 sccm, pressure was 0.02 Torr, RF power was 50 W, and substrate temperature was room temperature. .
以上の方法により、室温で、PETフィルム上にAl−ｉ型
カーボン膜−Al型のダイオードを作製し、ｉ型カーボン
膜の膜厚が20〜50Åのもので、 しきい値電圧Vth1V、 電流比ION/IOFF≧105 であった。By the above method, an Al-i type carbon film-Al type diode was produced on a PET film at room temperature, and the i-type carbon film had a film thickness of 20 to 50 Å and a threshold voltage V th 1V, The current ratio I ON / I OFF ≧ 10 5 .
（発明の効果） 以上説明したように、本発明によれば、Ｍ−Ｉ−Ｍ型素
子の絶縁物としてｉ型カーボンを使用することにより、
室温での素子の製造が可能となり、従ってプラスチック
フィルム等も基板として使用することができ、コストの
低減に大きく寄与するものである。(Effects of the Invention) As described above, according to the present invention, by using i-type carbon as an insulator of an M-I-M type element,
Since the device can be manufactured at room temperature, a plastic film or the like can be used as a substrate, which greatly contributes to cost reduction.
第１図は、本発明の一実施例の構成図、第２図は、同実
施例の製造方法を示す図、第３図は、ｉ型カーボンの成
膜装置を示す図である。 １……基板、2,4……金属電極膜、３……ｉ型カーボン
膜。FIG. 1 is a configuration diagram of an embodiment of the present invention, FIG. 2 is a diagram showing a manufacturing method of the same embodiment, and FIG. 3 is a diagram showing an i-type carbon film forming apparatus. 1 ... Substrate, 2, 4 ... Metal electrode film, 3 ... i-type carbon film.
Claims (1)
子において、前記絶縁物として、ｉ型カーボンを使用す
ることを特徴とする金属−絶縁物−金属型素子。1. A metal-insulator-metal type element, wherein an i-type carbon is used as the insulator in an element formed by sequentially laminating a metal, an insulator, and a metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61133735A JPH0736453B2 (en) | 1986-06-11 | 1986-06-11 | Metal-insulator-metal element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61133735A JPH0736453B2 (en) | 1986-06-11 | 1986-06-11 | Metal-insulator-metal element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62291081A JPS62291081A (en) | 1987-12-17 |
| JPH0736453B2 true JPH0736453B2 (en) | 1995-04-19 |
Family
ID=15111689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61133735A Expired - Fee Related JPH0736453B2 (en) | 1986-06-11 | 1986-06-11 | Metal-insulator-metal element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0736453B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0367195A3 (en) * | 1988-10-31 | 1991-10-02 | Matsushita Electric Industrial Co., Ltd. | Mim cold-cathode electron emission elements and methods of manufacture thereof |
| US5142390A (en) * | 1989-02-23 | 1992-08-25 | Ricoh Company, Ltd. | MIM element with a doped hard carbon film |
| US5153753A (en) * | 1989-04-12 | 1992-10-06 | Ricoh Company, Ltd. | Active matrix-type liquid crystal display containing a horizontal MIM device with inter-digital conductors |
| US5214416A (en) * | 1989-12-01 | 1993-05-25 | Ricoh Company, Ltd. | Active matrix board |
| JP3090979B2 (en) * | 1990-09-04 | 2000-09-25 | 株式会社リコー | Thin film laminated device with substrate and method of manufacturing the same |
-
1986
- 1986-06-11 JP JP61133735A patent/JPH0736453B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62291081A (en) | 1987-12-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |