JPH0738075B2 - Novel photoresist composition - Google Patents
Novel photoresist compositionInfo
- Publication number
- JPH0738075B2 JPH0738075B2 JP31581386A JP31581386A JPH0738075B2 JP H0738075 B2 JPH0738075 B2 JP H0738075B2 JP 31581386 A JP31581386 A JP 31581386A JP 31581386 A JP31581386 A JP 31581386A JP H0738075 B2 JPH0738075 B2 JP H0738075B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- light
- pattern
- present
- photoresist composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 22
- 239000000203 mixture Substances 0.000 title claims description 8
- 239000006096 absorbing agent Substances 0.000 claims description 16
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 230000002745 absorbent Effects 0.000 description 8
- 239000002250 absorbent Substances 0.000 description 8
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000002835 absorbance Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000000859 sublimation Methods 0.000 description 5
- 230000008022 sublimation Effects 0.000 description 5
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- TUAMRELNJMMDMT-UHFFFAOYSA-N 3,5-xylenol Chemical compound CC1=CC(C)=CC(O)=C1 TUAMRELNJMMDMT-UHFFFAOYSA-N 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- ZRDYULMDEGRWRC-UHFFFAOYSA-N (4-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O ZRDYULMDEGRWRC-UHFFFAOYSA-N 0.000 description 1
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 1
- HUVKYQOFHHLVDA-UHFFFAOYSA-N 2-(1,3-thiazol-2-yldiazenyl)naphthalen-1-ol Chemical compound Oc1c(ccc2ccccc12)N=Nc1nccs1 HUVKYQOFHHLVDA-UHFFFAOYSA-N 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Description
【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、吸光剤を含有してなる高感度なフォトレジス
ト組成物に関する。TECHNICAL FIELD The present invention relates to a highly sensitive photoresist composition containing a light absorber.
〈従来の技術〉 半導体素子は、従来フォトエッチング法による微細加工
技術によって製造されている。近年、集積回路の高集積
化によってパターンの微細化が進んだ。このためレジス
トには微細パターンを精度よく形成することが望まれ
る。<Prior Art> A semiconductor element is conventionally manufactured by a fine processing technique by a photoetching method. In recent years, the miniaturization of patterns has advanced due to higher integration of integrated circuits. Therefore, it is desired to form a fine pattern on the resist with high precision.
しかしながら、露光する光の回折や、下地のシリコン基
板表面から光の散乱や反射によってレジスト像の解像性
に著しい影響がある。アルミニウム電極、配線やポリシ
リコン電極を作製する場合には、アルミニウムを蒸着し
た基板や、CVD法でポリシリコン膜の付いた基板を使用
する。これら表面は反射率が高く、ハレーションが大き
く、表面の平坦な部分だけでなく基板に段差がある場合
にはその部分で乱反射がおこり、１〜３μｍ程度の線幅
のパターンを寸法精度よく再現することがむずかしい。However, the resolution of the resist image is significantly affected by the diffraction of the exposing light and the scattering and reflection of the light from the surface of the underlying silicon substrate. When manufacturing an aluminum electrode, a wiring, or a polysilicon electrode, a substrate on which aluminum is deposited or a substrate provided with a polysilicon film by a CVD method is used. These surfaces have high reflectance and large halation, and diffused reflection occurs not only in the flat part of the surface but also in the case where there is a step on the substrate, and a pattern with a line width of about 1 to 3 μm is reproduced with high dimensional accuracy. It's difficult.
このハレーションを防止する方法として、特公昭51−37
562号公報に紫外線領域に吸光特性を有する染料オイル
イエロー（〔C.I.−11020〕； を吸光剤として含有させフォトレジスト層の光透過性を
減少させ、基板表面で反射してフォトレジスト層を透過
する光を急激に低減させ、遮光領域への光の回り込みを
少なくし、解像度の低下を防止する方法が提案されてい
る。As a method of preventing this halation, Japanese Patent Publication No. 51-37
No. 562, dye oil yellow ([CI-11020]; having absorption characteristics in the ultraviolet region; Is included as a light absorber to reduce the light transmittance of the photoresist layer, sharply reduce the light reflected by the substrate surface and transmitted through the photoresist layer, and reduce the wraparound of light to the light-shielded area, resulting in a decrease in resolution. A method of preventing this has been proposed.
しかし、一般に吸光剤を添加するとフォトレジストの感
度が低下して、半導体製造時の生産性が低下して好まし
くない。また、溶媒を含有するフォトレジストをウエハ
に塗布しプリベークして、溶媒を除去するが、吸光剤に
よっては保存中析出したり、プリベーク時に昇華して濃
度が下り、満足な効果が得られなかったり、バラツキが
生じるという欠点があった。However, in general, the addition of a light absorber reduces the sensitivity of the photoresist, which lowers the productivity during semiconductor manufacturing, which is not preferable. In addition, a photoresist containing a solvent is applied to a wafer and prebaked to remove the solvent, but depending on the light absorber, precipitation may occur during storage, or sublimation at the time of prebaking may reduce the concentration, resulting in unsatisfactory effects. However, there is a drawback that variations occur.
〈発明が解決しようとする問題点〉 本発明者らは上記従来技術の欠点を克服すべく鋭意検討
した結果、本発明を完成するに至った。<Problems to be Solved by the Invention> The present inventors have completed the present invention as a result of intensive studies to overcome the above-mentioned drawbacks of the prior art.
本発明の目的は感度を維持して、プリベーク条件変化に
対しても、高反射基板上で微細パターンの寸法制御性の
良いフォトレジスト組成物を提供することにある。An object of the present invention is to provide a photoresist composition which maintains sensitivity and has good dimensional controllability of a fine pattern on a highly reflective substrate even with changes in pre-baking conditions.
また、本発明の目的はレジストと相溶性がよく吸光剤が
保存中（レジスト中、塗布・プリベーク後のレジスト膜
中）に析出しない微細加工用のフォトレジスト組成物を
提供することにある。Another object of the present invention is to provide a photoresist composition for microfabrication, which has good compatibility with a resist and does not deposit a light absorber during storage (in a resist, in a resist film after coating and prebaking).
〈問題点を解決するための手段〉 本発明は、フォトレジストに、一般式 〔式中、Ｘは を、Ｒはアルキル基又は水素原子を示す〕 で表わされるチアゾリルアゾ化合物の中から選ばれた少
なくとも１種の吸光剤を添加することによって達成され
る。<Means for Solving Problems> The present invention provides a photoresist with a general formula [Where X is Where R represents an alkyl group or a hydrogen atom], and at least one light absorber selected from the thiazolylazo compounds are added.
以下に本発明に用いられる吸光剤の具体例を挙げるが、
本発明はこれらに限定されるものではない。Specific examples of the light absorbent used in the present invention will be given below.
The present invention is not limited to these.
1.チアゾリルアゾクレゾール 2.チアゾリルアゾナフトール 3.他のチアゾールアゾ化合物 前記一般式で表わされる本発明の吸光剤がフォトレジス
ト組成物中0.1〜20wt％添加することができる。更に好
ましくは0.5〜10wt％添加することが望ましい。1. Thiazolylazocresol 2. Thiazolylazonaphthol 3. Other thiazole azo compounds The light absorbing agent of the present invention represented by the above general formula may be added in an amount of 0.1 to 20 wt% in the photoresist composition. More preferably, it is desirable to add 0.5 to 10 wt%.
本発明に用いられるフォトレジスト組成物の基材となる
フォトレジストとしては環化ゴムとビスアジドを主成分
とするネガ型フォトレジスト、フェノール類とホルムア
ルデヒドを付加縮合反応させて得られるノボラック樹脂
と少なくとも一個のｏ−キノンジアジド化合物を含むポ
ジ型フォトレジスト、あるいはポリメチルメタクリレー
ト、ポリメチルイソプロペニルケトン、ポリグリシジル
メタクリレートを主成分とするDeep UVレジストなどが
あげられる。更に好ましくはｍ−クレゾール及び又はｐ
−クレゾールとホルマリンより合成されるクレゾールノ
ボラック樹脂、ｍ−及びｐ−クレゾール及び3,5−キシ
レノールとホルマリンより合成されるクレゾール系ノボ
ラック樹脂等と2,3,4−トリヒドロキシベンゾフェノ
ン、2,3,4,4′−テトラヒドロキシベンゾフェノン、2,
2′,4,4′−テトラヒドロキシベンゾフェノン等のポリ
ヒドロキシベンゾフェノン類のナフトキノン−1,2−ジ
アジドスルホン酸エステルとを含有するポジ型フォトレ
ジストが挙げられる。The photoresist used as the base material of the photoresist composition used in the present invention is a negative photoresist containing cyclized rubber and bisazide as main components, and at least one novolak resin obtained by addition condensation reaction of phenols and formaldehyde. The positive type photoresist containing the o-quinonediazide compound, or the Deep UV resist containing polymethylmethacrylate, polymethylisopropenylketone or polyglycidylmethacrylate as a main component can be used. More preferably m-cresol and / or p
-Cresol novolac resin synthesized from cresol and formalin, m- and p-cresol and cresol novolac resin synthesized from 3,5-xylenol and formalin, and 2,3,4-trihydroxybenzophenone, 2,3, 4,4'-tetrahydroxybenzophenone, 2,
A positive photoresist containing a naphthoquinone-1,2-diazide sulfonic acid ester of polyhydroxybenzophenones such as 2 ', 4,4'-tetrahydroxybenzophenone can be mentioned.
〈発明の効果〉 本発明になるフォトレジストに新規な吸光剤を添加して
なるフォトレジスト組成物を使用すると、アルミニウ
ム、ポリシリコン等の高反射基板において感度が良好で
ハレーションが防止され、ベーク条件変動に対して安定
した寸法精度の良いレジストパターンが得られる。<Effects of the Invention> When a photoresist composition obtained by adding a novel light absorber to the photoresist according to the present invention is used, the sensitivity is good and halation is prevented on a highly reflective substrate such as aluminum or polysilicon, and the baking condition is used. It is possible to obtain a resist pattern that is stable against variations and has good dimensional accuracy.
〈実施例〉 以下、本発明を実施例及び比較例により具体的に説明す
るが、これによって本発明が制限されるものでない。<Examples> Hereinafter, the present invention will be specifically described with reference to Examples and Comparative Examples, but the present invention is not limited thereto.
実施例１ ノボラック樹脂と少なくとも１個のｏ−キノンジアジト
を含むポジ型フォトレジストPF−6200（商品名 住友化
学工業（株）製、固形分割合27.0wt％）に固形分割合に
対して3.1wt％の本発明の吸光剤の具体例１−１を添加
しフォトレジストを調整した。これをアルミ膜の付いた
４インチシリコンウエハに膜厚が1.27μｍになる様にス
ピナーで回転塗布（4100r.p.m.20秒）し、100℃１分ホ
ットプレートでプリベークした。これをテストレチクル
を介して縮小投影露光装置（GCA4800DSW）を用いて露光
し、コンベクションオーブンで90℃、30分アフターベー
クした。これをSOPD（商品名 住友化学工業（株）製ポ
ジ型現像液）を使用し自動現像機で、23℃、60秒静止パ
ドル法で現像した。形成されたパターンは0.8μｍまで
シャープに解像されており、またパターン側面の定在波
によるギザギザもなく、アルミ表面からのハレーション
防止効果に優れていることがわかった。また、膜抜け感
度は200msecであり、高感度であった。Example 1 A positive photoresist PF-6200 (trade name, manufactured by Sumitomo Chemical Co., Ltd., solid content ratio 27.0 wt%) containing a novolac resin and at least one o-quinonediazite was used in an amount of 3.1 wt% based on the solid content ratio. Example 1-1 of the light absorbent of the present invention was added to prepare a photoresist. This was spin coated on a 4-inch silicon wafer with an aluminum film by a spinner (4100 rpm for 20 seconds) so that the film thickness would be 1.27 μm, and prebaked at 100 ° C. for 1 minute on a hot plate. This was exposed using a reduction projection exposure device (GCA4800DSW) through a test reticle, and afterbaked in a convection oven at 90 ° C. for 30 minutes. This was developed using SOPD (trade name: positive developer of Sumitomo Chemical Co., Ltd.) with an automatic processor at 23 ° C. for 60 seconds by a static paddle method. It was found that the formed pattern was sharply resolved to 0.8 μm, and there was no jaggedness due to standing waves on the side surface of the pattern, and the effect of preventing halation from the aluminum surface was excellent. Further, the film removal sensitivity was 200 msec, which was high sensitivity.
ガラスウエハに回転塗布（4100r.p.m.20秒）し、120
℃、30分コンベクションオーブンでプリベークし、UV−
可視スペクトロメーターで436nmの吸光度比（プリベー
ク前との比較、感光剤の熱分解量を除去してある。）は
0.97であり、体昇華性が良好であった。Spin coating on glass wafer (4100r.pm for 20 seconds), 120
Prebaked in a convection oven for 30 minutes at 30 ° C and UV-
Absorbance ratio at 436 nm (compared to before pre-baking, the amount of thermal decomposition of the photosensitizer was removed) with a visible spectrometer.
It was 0.97, and the sublimability of the body was good.
シリコンウエハに上記と同様の方法で露光しアフターベ
ーク後４日間保存後現像し、パターン間に残留する析出
物を調べたが、析出物は認められなかった。保存（23
℃）６ケ月後のレジスト中にも吸光剤の析出はなかっ
た。A silicon wafer was exposed in the same manner as above, after-baked, stored for 4 days and then developed, and the deposits remaining between the patterns were examined, but no deposits were observed. Save (23
(° C) No light absorber was deposited in the resist after 6 months.
比較例１ 前記吸光剤を添加せずに実施例１と同様に行った。得ら
れた最小パターンの線巾は0.8μｍであったが、反射光
によて生じる定在波によると思われるパターン側面のギ
ザギザが見られた。膜抜け感度は200msecであった。Comparative Example 1 The procedure of Example 1 was repeated without adding the light absorber. The line width of the obtained minimum pattern was 0.8 μm, but jaggedness on the side surface of the pattern was observed, which was considered to be due to the standing wave generated by the reflected light. The transmembrane sensitivity was 200 msec.
比較例２ 公知の吸光剤オイルイエローを添加して、実施例１と同
様に行った。得られた最小パターン線巾は0.8μｍのパ
ターン側面のギザギザはなかった。しかし、膜抜け感度
が1025msecと著しく感度が悪化した。Comparative Example 2 The procedure of Example 1 was repeated with the addition of a known light absorber oil yellow. The obtained minimum pattern line width was 0.8 μm, and there was no jaggedness on the side surface of the pattern. However, the film detachment sensitivity was 1025 msec, which markedly deteriorated.
吸光度比が0.75であり、耐昇華性が悪かった。The absorbance ratio was 0.75 and the sublimation resistance was poor.
実施例２ フォトレジストとしてPF−3200（商品名 住友化学工業
（株）製、固形分割合27.5wt％）を、吸光剤として本発
明の吸光剤の具体例１−3 4.1wt％を添加すること以外
は実施例１と同様に行った。形成されたパターンは0.8
μｍまでシャープに解像し、パターン側面のギザギザも
なかった。膜抜け感度は240msecであり、高感度であっ
た。吸光度比は0.95であり、耐昇華性が良好であった。
吸光剤の析出もなかった。Example 2 Add PF-3200 (trade name, manufactured by Sumitomo Chemical Co., Ltd., solid content ratio 27.5 wt%) as a photoresist, and specific example 1-3-4 wt% of the light absorbent of the present invention as a light absorbent. The procedure was the same as in Example 1 except for the above. The pattern formed is 0.8
The resolution was sharp to μm, and there was no jaggedness on the side of the pattern. The transmembrane sensitivity was 240 msec, which was high sensitivity. The absorbance ratio was 0.95, and the sublimation resistance was good.
There was also no precipitation of the light absorber.
実施例３ 吸光剤として本発明の吸光剤の具体例３−1 5.0wt％を
添加すること以外は実施例１と同様に行った。形成され
たパターンは0.8μｍまでシャープに解像し、パターン
側面のギザギザもなかった。膜抜け感度は240msecであ
り、高感度でった。吸光度比は0.93であり、耐昇華性が
良好であった。吸光剤の析出もなかった。Example 3 The procedure of Example 1 was repeated, except that 5.0 wt% of Specific Example 3-1 of the light absorbent of the present invention was added as the light absorbent. The formed pattern resolved sharply up to 0.8 μm, and there was no jaggedness on the side surface of the pattern. The transmembrane sensitivity was 240 msec, which was high sensitivity. The absorbance ratio was 0.93, and the sublimation resistance was good. There was also no precipitation of the light absorber.
実施例４ 吸光剤として本発明の吸光剤の具体例2 4.5wt％を添加
すること以外は実施例１と同様に行った。形成されたパ
ターンは0.8μｍまでシャープに解像し、パターン側面
のギザギザもなかった。膜抜け感度は220msecであり、
高感度でった。吸光度比は0.94であり、耐昇華性が良好
であった。吸光剤の析出もなかった。Example 4 Example 1 was repeated except that 4.5 wt% of the specific example 2 of the light absorbent of the present invention was added as the light absorbent. The formed pattern resolved sharply up to 0.8 μm, and there was no jaggedness on the side surface of the pattern. Transmembrane sensitivity is 220 msec,
It was very sensitive. The absorbance ratio was 0.94, and the sublimation resistance was good. There was also no precipitation of the light absorber.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭56−153338（ＪＰ，Ａ) 特開 昭60−41650（ＪＰ，Ａ) 特開 昭61−98344（ＪＰ，Ａ) 特開 昭61−121051（ＪＰ，Ａ) ─────────────────────────────────────────────────── --- Continued from the front page (56) References JP-A-56-153338 (JP, A) JP-A-60-41650 (JP, A) JP-A-61-98344 (JP, A) JP-A-61- 121051 (JP, A)
Claims (2)
なくとも１種の吸光剤を添加したことを特徴とするフォ
トレジスト組成物。1. A photoresist of the general formula [Where X is Wherein R represents an alkyl group or a hydrogen atom], and at least one kind of light absorber selected from the thiazolylazo compounds represented by the formula [3] is added.
許請求の範囲第１項に記載のフォトレジスト組成物。2. The photoresist composition according to claim 1, wherein the content of the light absorber is 0.1 to 20% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31581386A JPH0738075B2 (en) | 1986-12-23 | 1986-12-23 | Novel photoresist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31581386A JPH0738075B2 (en) | 1986-12-23 | 1986-12-23 | Novel photoresist composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63159839A JPS63159839A (en) | 1988-07-02 |
| JPH0738075B2 true JPH0738075B2 (en) | 1995-04-26 |
Family
ID=18069861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31581386A Expired - Lifetime JPH0738075B2 (en) | 1986-12-23 | 1986-12-23 | Novel photoresist composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0738075B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2640137B2 (en) * | 1989-02-28 | 1997-08-13 | 富士写真フイルム株式会社 | Positive photoresist composition |
| JP6865174B2 (en) * | 2015-09-10 | 2021-04-28 | ヘンリー エム．ジャクソン ファウンデーション フォー ザ アドバンスメント オブ ミリタリー メディスン，インコーポレーテッド | Azophenol as an ERG oncogene inhibitor |
-
1986
- 1986-12-23 JP JP31581386A patent/JPH0738075B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63159839A (en) | 1988-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0231497B1 (en) | Silicone resist materials containing polysiloxanes | |
| JPH07504762A (en) | Photoresist with low metal ion levels | |
| KR900002362B1 (en) | Positive type photosensitive composition | |
| JPS6088941A (en) | Photoresist composition | |
| JPH0342461B2 (en) | ||
| KR950001004B1 (en) | Positive photoresist containing a mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate | |
| JP3024695B2 (en) | Positive photoresist composition | |
| JPH0369095B2 (en) | ||
| JPH0738075B2 (en) | Novel photoresist composition | |
| JP2682126B2 (en) | Photoresist composition | |
| JPH012034A (en) | photoresist composition | |
| JPH05507563A (en) | Contrast enhancement of non-chemically sensitized alkaline developable photoresists | |
| JP3787323B2 (en) | Positive photoresist coating liquid and display element substrate using the same | |
| JPS63286843A (en) | Positive type photoresist composition | |
| JPH05155942A (en) | Radiation-sensitive polymer containing naphthoquinone-2- diazido-4-sulfonyl group and its use in positive recording material | |
| JPS63161443A (en) | Photoresist composition | |
| JP2636395B2 (en) | Photoresist composition | |
| JP2595598B2 (en) | Photoresist composition | |
| JP2626068B2 (en) | Photoresist composition | |
| JP2626070B2 (en) | Photoresist composition | |
| JP2626067B2 (en) | Photoresist composition | |
| JP2626069B2 (en) | Photoresist composition | |
| KR20000048574A (en) | Light sensitive composition containing an arylhydrazo dye | |
| JP2626071B2 (en) | Resist composition | |
| JPH1010736A (en) | Positive photoresist coating film, positive photoresist composition, and pattern forming method |