JPH0738437B2 - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPH0738437B2 JPH0738437B2 JP60208908A JP20890885A JPH0738437B2 JP H0738437 B2 JPH0738437 B2 JP H0738437B2 JP 60208908 A JP60208908 A JP 60208908A JP 20890885 A JP20890885 A JP 20890885A JP H0738437 B2 JPH0738437 B2 JP H0738437B2
- Authority
- JP
- Japan
- Prior art keywords
- signal line
- horizontal
- vertical
- image sensor
- signal lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、光の像を電気信号に変換するイメージセンサ
に関するものである。TECHNICAL FIELD The present invention relates to an image sensor that converts an image of light into an electric signal.
（従来の技術） 近年、イメージセンサは、情報処理機器のセンサとし
て、重要視されてきた。(Prior Art) In recent years, image sensors have been regarded as important as sensors for information processing equipment.
59年度電子通信学会通信部門全国大会857,PP3-252「２
次元．新密着型イメージセンサの検討」で報告されたも
のは、垂直方向信号線と水平方向信号線との交点に光導
電材料（アモルファスシリコン）による抵抗体が設けら
れてなるものであり、各画素に対応する光導電材料によ
る抵抗体は、光が当ると抵抗値が減少するという特性を
持っている。この特性を利用して光イメージの検出が行
なえる。59th Annual Conference of IEICE Communications Division 857, PP3-252 "2
dimension. What was reported in "Study of new contact image sensor" is that a resistor made of photoconductive material (amorphous silicon) is provided at the intersection of the vertical signal line and the horizontal signal line, and each pixel has A resistor made of a corresponding photoconductive material has a characteristic that its resistance value decreases when it is exposed to light. An optical image can be detected by utilizing this characteristic.
（発明が解決しようとする問題点） しかしながら、上記のような構成では、まだ感度が十分
高くなく、また読み出し速度がおそいという欠点を有し
ていた。(Problems to be Solved by the Invention) However, the above-mentioned configuration has drawbacks that the sensitivity is not sufficiently high and the reading speed is slow.
本発明の目的は、さらに高感度で読み出し速度の速いイ
メージセンサを提供するものである。It is an object of the present invention to provide an image sensor with higher sensitivity and faster reading speed.
（問題点を解決するための手段） 上記問題点を解決するために、本発明のイメージセンサ
は、基板上に、格子状に配設されたそれぞれ複数の垂直
信号線及び水平信号線と、前記垂直信号線及び水平信号
線の各交差部において、２個のフォトダイオードが互い
に逆方向に直列接続されその両端が前記垂直信号線と水
平信号線にそれぞれ接続された複数の光感応素子と、前
記垂直信号線を順次走査して第１の電源から出力回路に
選択的に切換接続する水平走査スイッチと、前記水平信
号線を順次走査して基準電位から第２の電源に選択的に
切換接続する垂直走査スイッチとから構成され、前記１
水平信号線を選択する毎に前記垂直信号線を順次走査し
て複数の光感応素子に蓄積されたそれぞれ光の照射量に
対応する電荷を順次読み出すようにしたものである。(Means for Solving Problems) In order to solve the above problems, an image sensor of the present invention includes a plurality of vertical signal lines and horizontal signal lines arranged in a grid on a substrate, and At each intersection of the vertical signal line and the horizontal signal line, two photodiodes are connected in series in mutually opposite directions, and a plurality of photosensitive elements whose both ends are connected to the vertical signal line and the horizontal signal line, respectively, A horizontal scanning switch that sequentially scans the vertical signal lines and selectively switches and connects the first power supply to the output circuit; and a horizontal scanning switch that sequentially scans the horizontal signal lines and selectively switches and connects the reference potential to the second power supply. And a vertical scanning switch.
Each time the horizontal signal line is selected, the vertical signal line is sequentially scanned to sequentially read out the charges accumulated in the plurality of photosensitive elements, which correspond to the respective light irradiation amounts.
（作用） 上記の構成において、垂直方向の信号線に正のパルス信
号を印加することによって、２個のフォトダイオードは
逆方向バイアスに印加され、光電変換によって発生した
電荷が逆バイアスによって作られたフォトダイオードの
容量に信号電荷として蓄積される。この結果、蓄積モー
ドの信号読み出しが可能となり、感度が大幅に増大し、
読み出し速度も速くなる。(Operation) In the above configuration, by applying a positive pulse signal to the signal line in the vertical direction, the two photodiodes are applied with the reverse bias, and the charges generated by photoelectric conversion are generated by the reverse bias. It is accumulated as a signal charge in the capacitance of the photodiode. As a result, it becomes possible to read out the signal in the accumulation mode, which significantly increases the sensitivity,
The reading speed also becomes faster.
（実施例） 以下、実施例について、図面を参照しながら説明する。(Example) Hereinafter, an example will be described with reference to the drawings.
第１図は、本発明の一実施例における二次元イメージセ
ンサに等価回路を示したものである。第１図において、
ガラス基板１上に複数の垂直信号線２、水平信号線３が
配設され、それらの交点において、２個のフォトダイオ
ード４が互いに逆方向直列接続されて構成された光感応
素子が、両信号線2,3に接続されている。FIG. 1 shows an equivalent circuit of a two-dimensional image sensor according to an embodiment of the present invention. In FIG.
A plurality of vertical signal lines 2 and horizontal signal lines 3 are provided on the glass substrate 1, and at the intersections thereof, two photodiodes 4 are connected in series in opposite directions to each other. Connected to lines 2 and 3.
第２図は、イメージセンサの単位画素の模式的断面を示
したものであり、ガラス基板１上に垂直信号線２と透明
導電膜11が設けられ、透明導電膜11上に、アモルファス
シリコン（a-Si）のＰ層,I層,N層が順次積層されてなる
フォトダイオード４が形成されている。２つのフォトダ
イオード４は互いに逆方向に直列接続されるように上部
電極13がAl配線14によって電気的に接続され、フォトダ
イオード４の一方は透明導電膜11を介して垂直信号線２
に、他方は他の透明導電膜11を介して水平信号線３にそ
れぞれ接続されている。FIG. 2 shows a schematic cross section of a unit pixel of the image sensor. The vertical signal line 2 and the transparent conductive film 11 are provided on the glass substrate 1, and the amorphous silicon (a) is formed on the transparent conductive film 11. A photodiode 4 is formed by sequentially stacking a P layer, an I layer, and an N layer of -Si). The upper electrodes 13 of the two photodiodes 4 are electrically connected by an Al wiring 14 so that they are connected in series in opposite directions, and one of the photodiodes 4 is connected to the vertical signal line 2 via a transparent conductive film 11.
The other is connected to the horizontal signal line 3 via another transparent conductive film 11.
以上のように構成された二次元イメージセンサについ
て、以下その動作を説明する。The operation of the two-dimensional image sensor configured as described above will be described below.
２個のフォトダイオード４は、逆バイアスにセットさ
れ、フォトダイオードで光電変換が行なわれて信号電荷
が蓄積される。そして、垂直走査スイッチ５が、VT電源
（例えば7V）に接続され、さらに、水平走査スイッチ６
が出力回路８に、接続された時、２つの信号線の交点に
あるフォトダイオード４に蓄積された信号電荷が出力回
路８に読み出される。The two photodiodes 4 are set to a reverse bias, photoelectric conversion is performed by the photodiodes, and signal charges are accumulated. Then, the vertical scan switch 5 is connected to the V T power supply (for example, 7 V), and further the horizontal scan switch 6
Is connected to the output circuit 8, the signal charge accumulated in the photodiode 4 at the intersection of the two signal lines is read out to the output circuit 8.
従って、垂直走査スイッチ５により、水平信号線３を基
準電位、例えば接地電位の電源ラインから第２の電源VT
に順次選択的に切換接続し、その１水平信号線の選択毎
に、水平走査スイッチ６により、垂直信号線２を第１の
電源VBから出力回路８に順次選択的に切換接続すること
により、二次元的に配列されたフォトダイオード４に蓄
積された信号電荷を順次読み出すことができる。Therefore, the vertical scanning switch 5 causes the horizontal signal line 3 to move from the power source line of the reference potential, for example, the ground potential to the second power source V T.
To the output circuit 8 from the first power source V B by the horizontal scanning switch 6 every time one horizontal signal line is selected. , The signal charges accumulated in the two-dimensionally arranged photodiodes 4 can be sequentially read.
以上のように、本実施例によれば、蓄積モード型の信号
読み出しが可能であるため、より高感度で高速読み出し
が可能な二次元イメージセンサを実現することができ
る。As described above, according to the present embodiment, since the accumulation mode type signal readout is possible, it is possible to realize a two-dimensional image sensor capable of high sensitivity and high speed readout.
なお、本実施例ではフォトダイオードの下部電極に透明
材料を使用して、入射光はガラス基板方向としたがフォ
トダイオードの上部電極に透明金属材料を使用して、こ
の上部電極側から入射しても同様の効果が得られる。In this embodiment, a transparent material is used for the lower electrode of the photodiode and the incident light is directed toward the glass substrate, but a transparent metal material is used for the upper electrode of the photodiode and the incident light is incident from the upper electrode side. Also has the same effect.
（発明の効果） 以上のように、本発明によれば、蓄積モードの読み出し
が可能になり、感度も増大し、さらに読み出し速度も速
くすることができ、その実用的効果は大なるものがあ
る。(Effects of the Invention) As described above, according to the present invention, it is possible to read in the accumulation mode, the sensitivity is increased, and the reading speed can be increased, and the practical effects thereof are great. .
第１図は、本発明の一実施例における二次元イメージセ
ンサの等価回路図、第２図は、同実施例における単位画
素の模式的断面図である。 １……ガラス基板、２……垂直信号線、３……水平信号
線、４……フォトダイオード、５……垂直走査スイッ
チ、６……水平走査スイッチ。FIG. 1 is an equivalent circuit diagram of a two-dimensional image sensor in one embodiment of the present invention, and FIG. 2 is a schematic sectional view of a unit pixel in the embodiment. 1 ... Glass substrate, 2 ... vertical signal line, 3 ... horizontal signal line, 4 ... photodiode, 5 ... vertical scanning switch, 6 ... horizontal scanning switch.
Claims (1)
数の垂直信号線及び水平信号線と、 前記垂直信号線及び水平信号線の各交差部において、２
個のフォトダイオードが互いに逆方向に直列接続されそ
の両端が前記垂直信号線と水平信号線にそれぞれ接続さ
れた複数の光感応素子と、 前記垂直信号線を順次走査して第１の電源から出力回路
に選択的に切換接続する水平走査スイッチと、 前記水平信号線を順次走査して基準電位から第２の電源
に選択的に切換接続する垂直走査スイッチとからなり、 前記第１水平信号線を選択する毎に前記垂直信号線を順
次走査して複数の光感応素子に蓄積されたそれぞれ光の
照射量に対応する電荷を順次読み出すことを特徴とする
イメージセンサ。1. A plurality of vertical signal lines and horizontal signal lines arranged in a grid on a substrate, and 2 at each intersection of the vertical signal lines and the horizontal signal lines.
A plurality of photodiodes, each of which is connected in series in opposite directions and whose both ends are connected to the vertical signal line and the horizontal signal line, respectively, and the vertical signal line is sequentially scanned to output from the first power source. A horizontal scanning switch for selectively switching and connecting to the circuit; and a vertical scanning switch for selectively scanning and connecting the horizontal signal line to a second power source from the reference potential to connect the first horizontal signal line to the second horizontal power line. An image sensor characterized in that the vertical signal line is sequentially scanned every time it is selected, and charges corresponding to respective light irradiation amounts accumulated in a plurality of photosensitive elements are sequentially read out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60208908A JPH0738437B2 (en) | 1985-09-24 | 1985-09-24 | Image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60208908A JPH0738437B2 (en) | 1985-09-24 | 1985-09-24 | Image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6269671A JPS6269671A (en) | 1987-03-30 |
| JPH0738437B2 true JPH0738437B2 (en) | 1995-04-26 |
Family
ID=16564113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60208908A Expired - Fee Related JPH0738437B2 (en) | 1985-09-24 | 1985-09-24 | Image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0738437B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8921561D0 (en) * | 1989-09-23 | 1989-11-08 | Univ Edinburgh | Designs and procedures for testing integrated circuits containing sensor arrays |
| GB9308543D0 (en) * | 1993-04-24 | 1993-06-09 | Philips Electronics Uk Ltd | An image sensor |
| JP2592217B2 (en) * | 1993-11-11 | 1997-03-19 | 株式会社フロンテック | High frequency magnetron plasma equipment |
| FR2795271B1 (en) * | 1999-06-15 | 2001-08-31 | Commissariat Energie Atomique | METHOD FOR POLARIZING THE PHOTODIODES OF A MATRIX SENSOR BY THEIR RELATED PIXELS |
-
1985
- 1985-09-24 JP JP60208908A patent/JPH0738437B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6269671A (en) | 1987-03-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |