JPH0738702B2 - Endoscope - Google Patents
EndoscopeInfo
- Publication number
- JPH0738702B2 JPH0738702B2 JP58220432A JP22043283A JPH0738702B2 JP H0738702 B2 JPH0738702 B2 JP H0738702B2 JP 58220432 A JP58220432 A JP 58220432A JP 22043283 A JP22043283 A JP 22043283A JP H0738702 B2 JPH0738702 B2 JP H0738702B2
- Authority
- JP
- Japan
- Prior art keywords
- solid
- electro
- optical element
- imaging device
- state imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Endoscopes (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Description
【発明の詳細な説明】 〔技術分野〕 本発明はインターライン転送方式の固体撮像素子を先端
部に備えた内視鏡に関し、特に固体撮像素子の解像力向
上手段の改良に関する。Description: TECHNICAL FIELD The present invention relates to an endoscope including a solid-state image sensor of an interline transfer system at a tip portion thereof, and more particularly, to improvement of resolution improving means of the solid-state image sensor.
内視鏡に使用される固体撮像装置においてはその大きさ
を制限される。したがって固体撮像素子の画素数も自ら
制限を受け、十分な解像力が得られない難点があった。
上記解像力を向上させる手段として固体撮像素子のチッ
プを光軸方向にフレーム同期で振動させるようにしたも
のがあるが、上記のものは内視鏡のイメージガイドの解
像力を向上させるものであって、固体撮像素子そのもの
は解像力向上をはかるものではない。したがってイメー
ジガイドファイバを使用しない型式のもの例えば内視鏡
先端に固体撮像素子を装着し撮像信号のみを外部へ伝送
するタイプのもの等には適用できない。しかも振動幅,
周期等の精度に問題があり、耐久性にも欠けるといった
欠点がある。The size of the solid-state imaging device used for an endoscope is limited. Therefore, the number of pixels of the solid-state image sensor is limited by itself, and there is a problem that sufficient resolution cannot be obtained.
As a means for improving the resolution, there is one in which the chip of the solid-state imaging device is vibrated in the frame direction in the optical axis direction, but the above is for improving the resolution of the image guide of the endoscope. The solid-state image sensor itself does not improve the resolution. Therefore, it cannot be applied to a type that does not use an image guide fiber, for example, a type that mounts a solid-state image sensor on the tip of an endoscope and transmits only an image pickup signal to the outside. Moreover, the vibration width,
There is a problem in that there is a problem in the accuracy of the cycle and the durability is also poor.
本発明の目的は固体撮像素子の解像力が十分高く、しか
も機械的振動部分がなく精度や耐久性の点で全く問題が
なく、信頼性の高い動作が期待できる小型、軽量な固体
撮像装置を備えた内視鏡を提供することにある。The object of the present invention is to provide a small and lightweight solid-state image pickup device in which the resolution of the solid-state image pickup element is sufficiently high, there is no mechanical vibration part, there is no problem in accuracy and durability, and highly reliable operation can be expected. To provide an endoscope.
本発明は上記目的を達成するために次の如く構成したこ
とを特徴としている。本発明は、画素と転送ラインを水
平方向に交互に配置したインターライン転送方式の固体
撮像素子を先端部に備えた内視鏡において、電気光学素
子を前記固体撮像素子の光入射側前方に設け、この電気
光学素子に所定の制御電圧を印加して屈折率を可変制御
し、前記固体撮像素子上に結像する光学像の位置を前記
固体撮像素子中の画素間の距離の1/2だけ水平走査方向
に移動させるようにしたことを特徴としている。The present invention is characterized by having the following constitution in order to achieve the above object. The present invention relates to an endoscope having an interline transfer type solid-state image sensor in which pixels and transfer lines are alternately arranged in a horizontal direction at a distal end portion, and an electro-optical element is provided in front of a light incident side of the solid-state image sensor. , A predetermined control voltage is applied to this electro-optical element to variably control the refractive index, and the position of the optical image formed on the solid-state image sensor is set to 1/2 of the distance between pixels in the solid-state image sensor. It is characterized in that it is moved in the horizontal scanning direction.
第1図は本発明を内視鏡用の撮像装置に適用した一実施
例を示す図である。図中1は内視鏡であり、この内視鏡
1の挿入部1Aの先端には対物レンズ2が装着されてい
る。この対物レンズ2に対向するように後述する電気光
学素子3を介して撮像体4が配設されている。上記撮像
体4により光電変換された光学像の信号は、信号伝送ケ
ーブル5を介してカメラコントローラ(不図示)に送ら
れ映像信号とされる。この映像信号は信号伝送ケーブル
6により接眼部1Bまで導かれ、接眼部1Bに設けられたCR
T7により映出される。かくしてCRT7上に映出された画面
により被観察部を観察し得るものとなっている。FIG. 1 is a diagram showing an embodiment in which the present invention is applied to an imaging device for an endoscope. In the figure, reference numeral 1 denotes an endoscope, and an objective lens 2 is attached to the tip of an insertion portion 1A of the endoscope 1. An image pickup body 4 is arranged so as to face the objective lens 2 via an electro-optical element 3 described later. A signal of an optical image photoelectrically converted by the image pickup body 4 is sent to a camera controller (not shown) via a signal transmission cable 5 to be a video signal. This video signal is guided to the eyepiece 1B by the signal transmission cable 6, and the CR provided in the eyepiece 1B
Projected by T7. Thus, the observed portion can be observed on the screen displayed on the CRT7.
一方、挿入部1Aの先端の対物レンズ2の側傍にはカバー
レンズ8が装着されており、このカバーレンズ8に一端
が対向するように照明用ライトガイドファイバ9が設け
られている。このライトガイドファイバ9の他端は内視
鏡用光源装置(不図示)まで導かれている。On the other hand, a cover lens 8 is mounted on the side of the objective lens 2 at the tip of the insertion section 1A, and an illumination light guide fiber 9 is provided so that one end faces the cover lens 8. The other end of the light guide fiber 9 is led to a light source device for an endoscope (not shown).
第2図は第1図に示した対物レンズ2,電気光学素子3,撮
像体4の部分を取出して詳細に示した図である。FIG. 2 is a diagram showing in detail the objective lens 2, the electro-optical element 3, and the image pickup body 4 shown in FIG.
第2図に示すように、電気光学素子3は撮像部4の光入
射側の前方に光軸に対し傾斜して設けられている。この
電気光学素子3は電気光学効果を有する透明誘電体平板
10の表裏両面に透明薄膜電極11,12を蒸着した構造を有
している。上記透明誘導体平板10は例えばネオビ酸リチ
ウムLiNbO3からなりチタンTiが均等に分布拡散されてい
る。また透明薄膜電極11,12は例えばSnO2やInO3などか
らなっている。上記透明薄膜電極11,12はリード線13,14
により制御電圧印加手段としての直流電圧印加装置15の
出力端に接続されている。As shown in FIG. 2, the electro-optical element 3 is provided in front of the light-incident side of the image pickup unit 4 and inclined with respect to the optical axis. This electro-optical element 3 is a transparent dielectric flat plate having an electro-optical effect.
It has a structure in which transparent thin film electrodes 11 and 12 are vapor-deposited on both front and back surfaces of 10. The transparent dielectric flat plate 10 is made of, for example, lithium neobiate LiNbO 3 , and titanium Ti is uniformly distributed and diffused. The transparent thin film electrodes 11 and 12 are made of, for example, SnO 2 or InO 3 . The transparent thin film electrodes 11 and 12 are lead wires 13 and 14.
Is connected to the output terminal of the DC voltage applying device 15 as the control voltage applying means.
一方、撮像体4は、複数の光検出素子をマトリクス状に
配設し、光学像を電気信号に変換すると共にこの電気信
号を走査して取出す如く構成されたインターライン転送
方式のCCDからなる固体撮像素子16と、この固体撮像素
子16を保持するマウント17とで構成されている。On the other hand, the image pickup body 4 is a solid-state CCD composed of an interline transfer system, in which a plurality of photo-detecting elements are arranged in a matrix, an optical image is converted into an electric signal, and the electric signal is scanned and taken out. The image pickup device 16 and a mount 17 that holds the solid-state image pickup device 16 are included.
第3図は固体撮像素子16の具体的構成を示す図である。
第3図において18はフオトダイオード群、19上記フォト
ダイオード群18からの信号電荷を垂直方向へ転送する垂
直CCD、20は上記垂直CCDにより転送された電荷を水平方
向へ転送する水平CCD、21は上記水平CCDにより転送され
た電荷を出力信号として送出する出力部である。FIG. 3 is a diagram showing a specific configuration of the solid-state imaging device 16.
In FIG. 3, 18 is a photodiode group, 19 is a vertical CCD that vertically transfers the signal charges from the photodiode group 18, 20 is a horizontal CCD that horizontally transfers the charges transferred by the vertical CCD, and 21 is The output section sends out the electric charges transferred by the horizontal CCD as an output signal.
次に上記の如く構成された本装置の動作を説明する。電
気光学素子3に直流電圧印加装置15から制御電圧が印加
されていない状態では、電気光学素子3の屈折率は比較
的小さく、光路A,Bは第2図中実線で示すようになる。
また電気光学素子3に直流電圧印加装置15から制御電圧
を印加すると、透明誘電体平板10内の誘電率に応じた電
束が生じ、その電束密度の大きさに応じて屈折率が高く
なり、光路A,Bは第2図中破線で示すようになる。上記
印加電圧を大きくすれば電束密度があり、屈折率が増大
する。ここで上記光路A,Bのずれに伴う固体撮像素子16
上に結像する光学像の位置ずれは、第3図に示す水平走
査方向のフォトダイオード間の距離をLとしたときL/2
に設定されている。また直流電圧印加装置15から電気光
学素子3への電圧印加は交互に周期的に行われる。この
周期は1枚の画像が得られるフレーム周波数に同期した
ものとする。(NTSC方式では30Hz) したがって今、電圧未印加時において固体撮像素子16に
光を入射させ、そのときの電荷を垂直信号転送CCD19に
より垂直方向へ転送し、さらに水平信号転送CCD20によ
り水平方向へ転送し、出力部21から情報の読出しを行な
っている期間中において電圧印加を行なうと、電圧未印
加時とはL/2だけずれた固体撮像素子16の位置へ光が入
射する。そしてこのときの電荷を上記と同様に読出す。
こうすることにより、最初の電圧未印加時の位置での結
像状態において、垂直信号転送CCD19に位置しているた
めに、フォトダイオード群18に受光されない結像部分
が、電圧印加時においてL/2だけ水平方向にずれること
になる。その結果、解像力が水平方向で2倍となる。Next, the operation of the present apparatus configured as described above will be described. In the state where the control voltage is not applied to the electro-optical element 3 from the DC voltage applying device 15, the refractive index of the electro-optical element 3 is relatively small, and the optical paths A and B are as shown by the solid line in FIG.
When a control voltage is applied to the electro-optical element 3 from the DC voltage applying device 15, an electric flux corresponding to the dielectric constant in the transparent dielectric plate 10 is generated, and the refractive index increases according to the magnitude of the electric flux density. , The optical paths A and B are as shown by the broken lines in FIG. If the applied voltage is increased, there is an electric flux density and the refractive index increases. Here, the solid-state imaging device 16 due to the deviation of the optical paths A and B
The positional deviation of the optical image formed above is L / 2 when the distance between the photodiodes in the horizontal scanning direction shown in FIG. 3 is L.
Is set to. Further, the voltage application from the DC voltage application device 15 to the electro-optical element 3 is alternately and periodically performed. It is assumed that this cycle is synchronized with the frame frequency at which one image is obtained. (30Hz in NTSC system) Therefore, when the voltage is not applied, light is incident on the solid-state image sensor 16, and the electric charges at that time are transferred vertically by the vertical signal transfer CCD 19 and further transferred horizontally by the horizontal signal transfer CCD 20. Then, when voltage is applied during the period of reading information from the output unit 21, light is incident on the position of the solid-state image sensor 16 which is shifted by L / 2 from that when no voltage is applied. Then, the charges at this time are read out in the same manner as above.
By doing so, in the image forming state at the position where the voltage is not applied for the first time, the image forming portion that is not received by the photodiode group 18 because it is located in the vertical signal transfer CCD 19 is L / It will be offset by 2 horizontally. As a result, the resolution is doubled in the horizontal direction.
上記実施例に示した装置では電気光学素子3を対物レン
ズ2と撮像体4との間に介在させたので、光学系は従来
のもとの同じ大きさでよく、これまでの撮像装置にその
まま簡単に応用できる。In the device shown in the above embodiment, since the electro-optical element 3 is interposed between the objective lens 2 and the image pickup body 4, the optical system may have the same size as that of the conventional one, and it can be used as it is in the conventional image pickup device. Easy to apply.
なお本実施例では電気光学素子3に対し制御電圧を印加
するという手段を講ずるのみで解像力をあげることがで
きるので、従来のように機械的振動を行なう必要が全く
ない。このため、振動動作の精度や耐久性の点で全く問
題がなく、信頼性の高い動作が期待できる。In this embodiment, the resolving power can be increased only by providing a means for applying a control voltage to the electro-optical element 3, so there is no need to perform mechanical vibration as in the conventional case. Therefore, there is no problem in terms of accuracy and durability of vibration operation, and highly reliable operation can be expected.
第4図は本発明の他の実施例の撮像部のもようを第2図
に対応して示した図である。この実施例は電気光学素子
3を対物レンズ2のさらに前方に配置した例である。こ
の実施例によれば、光学系としては前記実施例より若干
大きなものとなるが、電気光学素子3の傾斜面を前記実
施例の場合に比べて小さくできる。FIG. 4 is a view corresponding to FIG. 2, showing the flow of the image pickup section of another embodiment of the present invention. In this embodiment, the electro-optical element 3 is arranged further in front of the objective lens 2. According to this embodiment, the optical system is slightly larger than that of the above embodiment, but the inclined surface of the electro-optical element 3 can be made smaller than that of the above embodiment.
すなわち対物レンズ2における入射光線と出射光線とで
は光軸に対する角度が後者の方がはるかに大きい。した
がって前記実施例の場合には電気光学素子3に入射する
光線が、光軸に対する角度の大きな対物レンズ2の出射
光線であるために電気光学素子3の傾斜角を大きくしな
いと、結像が所定位置に移動しない。この点本実施例の
場合には電気光学素子3に入射する光線が、光軸に対す
る角度の小さな対物レンズ2の入射光線であるために電
気光学素子3の傾斜角を小さくしても結像は所定位置に
移動する。なお本実施例においては固体撮像素子16の受
光面における結像の焦点ずれおよび像の歪みも小さくな
る利点がある。つまり前記実施例に比べて非点収差,球
面収差等が小さく鮮明な像が得られる利点がある。That is, the angle between the incident ray and the outgoing ray in the objective lens 2 with respect to the optical axis is much larger in the latter case. Therefore, in the case of the above-mentioned embodiment, since the light beam incident on the electro-optical element 3 is the light beam emitted from the objective lens 2 having a large angle with respect to the optical axis, the image formation is predetermined unless the inclination angle of the electro-optical element 3 is increased. Does not move to position. In this respect, in the case of the present embodiment, the light beam incident on the electro-optical element 3 is the light beam incident on the objective lens 2 having a small angle with respect to the optical axis. Move to a predetermined position. It should be noted that this embodiment has an advantage that the defocusing of the image and the distortion of the image on the light receiving surface of the solid-state image sensor 16 are reduced. That is, there is an advantage that a clear image can be obtained with less astigmatism, spherical aberration and the like as compared with the above-mentioned embodiment.
本発明によれば、固体撮像素子の光入射側前方に電気光
学素子設け、この電気光学素子に制御電圧を与えること
により固体撮像素子の受光面の結像位置を所定位置にず
らすようにしたので、固体撮像素子の解像力を十分大き
なものとなし得ると共に、機械的振動部分がなく精度や
耐久性の点で全く問題がなく、長期に亘り信頼性の高い
動作が期待できる固体撮像装置を提供できる。According to the present invention, the electro-optical element is provided in front of the light incident side of the solid-state image sensor, and a control voltage is applied to the electro-optical element to shift the image forming position of the light-receiving surface of the solid-state image sensor to a predetermined position. It is possible to provide a solid-state image pickup device which can make the resolution of the solid-state image pickup device sufficiently large, has no mechanical vibration portion, has no problem in terms of accuracy and durability, and can be expected to have reliable operation for a long period of time. .
第1図〜第3図は本発明の第1の実施例を示す図で、第
1図は全体の構成を概略的に示す側面断面図、第2図は
撮像部の構成を示す図、第3図は固体撮像素子の概略的
構成を示す平面図、第4図は本発明の第2の実施例の撮
像部の構成を示す図である。 1……内視鏡、1A……挿入部、1B……接眼部、2……対
物レンズ、3……電気光学素子、4……撮像体、5,6…
…信号伝送ケーブル、7……CRT、8……カバーレン
ズ、9……照明用ライトガイドファイバー、10……透明
誘電体平板、11,12……透明薄膜電極、13,14……リード
線、15……直流電圧印加装置、16……固体撮像素子、17
……マウント、18……フォトダイオード群、19……垂直
信号転送CCD、21……出力部、1 to 3 are views showing a first embodiment of the present invention, FIG. 1 is a side sectional view schematically showing the entire structure, and FIG. 2 is a view showing the structure of an imaging unit. FIG. 3 is a plan view showing a schematic structure of a solid-state image pickup device, and FIG. 4 is a view showing a structure of an image pickup section according to a second embodiment of the present invention. 1 ... Endoscope, 1A ... Insertion part, 1B ... Eyepiece part, 2 ... Objective lens, 3 ... Electro-optical element, 4 ... Imaging body, 5,6 ...
… Signal transmission cable, 7 …… CRT, 8 …… Cover lens, 9 …… Light guide fiber for illumination, 10 …… Transparent dielectric plate, 11,12 …… Transparent thin film electrode, 13,14… Lead wire, 15 ... DC voltage application device, 16 ... Solid-state image sensor, 17
...... Mount, 18 …… Photodiode group, 19 …… Vertical signal transfer CCD, 21 …… Output section,
Claims (1)
したインターライン転送方式の固体撮像素子と、 前記固体撮像素子を先端に有する内視鏡挿入部と、 前記固体撮像素子の光入射側前方で光軸に対し傾斜して
設けられ、電圧の印加で屈折率を変化させることで前記
固体撮像素子上に結像する光学像の位置を前記固体撮像
素子中の画素間の距離の1/2だけ水平走査方向に移動さ
せる平板状の電気光学素子と、 前記電気光学素子へ制御電圧を印加する制御電圧印加手
段とを具備したことを特徴とする内視鏡。1. An interline transfer type solid-state imaging device in which pixels and transfer lines are alternately arranged in a horizontal direction, an endoscope insertion section having the solid-state imaging device at a tip, and a light incident side of the solid-state imaging device. The position of the optical image formed on the solid-state imaging device by changing the refractive index by applying a voltage in front of the optical axis is 1/1 / the distance between pixels in the solid-state imaging device. An endoscope comprising: a flat plate-shaped electro-optical element that moves by 2 in the horizontal scanning direction; and a control voltage applying unit that applies a control voltage to the electro-optical element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58220432A JPH0738702B2 (en) | 1983-11-22 | 1983-11-22 | Endoscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58220432A JPH0738702B2 (en) | 1983-11-22 | 1983-11-22 | Endoscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60112377A JPS60112377A (en) | 1985-06-18 |
| JPH0738702B2 true JPH0738702B2 (en) | 1995-04-26 |
Family
ID=16751012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58220432A Expired - Lifetime JPH0738702B2 (en) | 1983-11-22 | 1983-11-22 | Endoscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0738702B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5282043A (en) * | 1992-01-21 | 1994-01-25 | Robert Bosch Gmbh | Color video camera and method for improving resolution of a semiconductor image sensor |
| JPH06350931A (en) * | 1993-06-02 | 1994-12-22 | Hamamatsu Photonics Kk | Solid-state image pickup device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5668068A (en) * | 1979-11-09 | 1981-06-08 | Toshiba Corp | Image pickup system using electric charge transfer element |
| JPS5864875A (en) * | 1981-10-14 | 1983-04-18 | Sony Corp | Image pickup device |
-
1983
- 1983-11-22 JP JP58220432A patent/JPH0738702B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60112377A (en) | 1985-06-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5495114A (en) | Miniaturized electronic imaging chip | |
| US11282882B2 (en) | Focus detecting device and electronic device | |
| US4692608A (en) | Compact optical imaging system | |
| US8094183B2 (en) | Panoramic imaging device | |
| JP2600250B2 (en) | Solid-state imaging device and video camera | |
| JP2749817B2 (en) | Imaging system | |
| FR2486387A1 (en) | RADIODIAGNOSTIC INSTALLATION WITH SOLID STATE IMAGE CONVERTER | |
| JPH09139878A (en) | Image processing system | |
| JPH0738702B2 (en) | Endoscope | |
| US4812911A (en) | Adapter with built-in shutter | |
| JP2952491B2 (en) | Imaging device | |
| JP3898263B2 (en) | Image display device | |
| JP2002229139A (en) | Imaging device | |
| JPH0228966B2 (en) | ||
| WO2001026365A1 (en) | Imaging device and imaging element | |
| KR100263563B1 (en) | Image processing unit | |
| JPS60149269A (en) | tv jiyoung camera | |
| JP2885316B2 (en) | Color imaging device | |
| JPS60136714A (en) | Image pickup device | |
| JPS6350172A (en) | Video camera unit | |
| JPS60109974A (en) | Television camera device | |
| JPS6175679A (en) | Solid-state image pick-up device | |
| JPH0349083B2 (en) | ||
| JPS63101811A (en) | Automatic focusing device for electronic camera | |
| JPS62161283A (en) | Displacing device for solid-state image pickup element |