JPH073878B2 - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JPH073878B2 JPH073878B2 JP1262885A JP26288589A JPH073878B2 JP H073878 B2 JPH073878 B2 JP H073878B2 JP 1262885 A JP1262885 A JP 1262885A JP 26288589 A JP26288589 A JP 26288589A JP H073878 B2 JPH073878 B2 JP H073878B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- microcrystalline silicon
- hydrogenated microcrystalline
- glass substrate
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、開放電圧および短絡電流密度の高い高効率ア
モルフアスシリコン太陽電池に関する。Description: TECHNICAL FIELD The present invention relates to a high-efficiency amorphous silicon solar cell having high open circuit voltage and short circuit current density.
従来の開放電圧の高い高効率アモルフアスシリコン太陽
電池は、テクニカルダイジエスト オブザ インターナ
シヨナル ピーヴイセツク（PVSEC）−3,1987,171頁に
示されているように、ガラス基板の上に膜厚の厚い凹凸
の大きな透明導電膜（酸化錫）および耐プラズマ性膜
（酸化亜鉛）を形成し、ｐ型水素化微結晶シリコンカー
バイド,i型水素化アモルフアスシリコン,n型水素化微結
晶シリコン，金属電極を順次形成した構造となつてい
る。Conventional high-efficiency amorphous silicon solar cells with high open-circuit voltage have a large film thickness on the glass substrate, as shown in Technical Digest of the International Peabody (PVSEC) -3,1987, p.171. P-type hydrogenated microcrystalline silicon carbide, i-type hydrogenated amorphous silicon, n-type hydrogenated microcrystalline silicon, and metal electrodes are formed by forming a transparent conductive film (tin oxide) and plasma resistant film (zinc oxide) with large irregularities. It has a structure in which
上記従来技術では、水素化微結晶シリコンカーバイド等
の水素化微結晶膜を形成する場合、水素プラズマが透明
導電膜に悪影響を及ぼすため、透明導電膜の上に耐プラ
ズマ性膜の形成が必要である。そこで、これの改良策と
して、透明導電膜を用いずに、表面を凹凸化したガラス
基板上に直接微結晶膜を形成した太陽電池について検討
した。しかしながら、ガラス基板上に直接微結晶膜を形
成すると、薄膜の微結晶膜形成が困難なため膜厚を厚く
する必要があり、このため該微結晶膜での光学吸収が大
きく太陽電池の短絡電流密度が低いという問題があつ
た。In the above prior art, when a hydrogenated microcrystalline film such as hydrogenated microcrystalline silicon carbide is formed, hydrogen plasma adversely affects the transparent conductive film, so that it is necessary to form a plasma resistant film on the transparent conductive film. is there. Therefore, as an improvement measure for this, a solar cell in which a microcrystalline film is directly formed on a glass substrate having a roughened surface without using a transparent conductive film was examined. However, when a microcrystalline film is formed directly on a glass substrate, it is difficult to form a thin microcrystalline film, and therefore it is necessary to increase the film thickness. Therefore, the optical absorption in the microcrystalline film is large and the short-circuit current of the solar cell is large. There was a problem of low density.
従つて、本発明の目的は、上記問題を解決し、ガラス基
板上に薄膜の微結晶シリコンあるいは微結晶シリコンア
ロイ膜を形成し光電変換効率の高い太陽電池を提供する
ことにある。Therefore, an object of the present invention is to solve the above problems and provide a solar cell having high photoelectric conversion efficiency by forming a thin film of microcrystalline silicon or a microcrystalline silicon alloy film on a glass substrate.
上記目的を達成するために、微結晶シリコンあるいは微
結晶シリコンアロイ膜形成に先立ち、該微結晶膜の該形
成を起こし易い多結晶光透過膜の形成を行なうものであ
る。該多結晶光透過膜の形成はガラス基板の全面でなく
一部でも良く、またガラス基板に直接ではなくガラス基
板に形成した高屈折率光透過膜の上でも良い。In order to achieve the above object, a polycrystalline light-transmitting film which easily causes the formation of the microcrystalline film is formed prior to the formation of the microcrystalline silicon or the microcrystalline silicon alloy film. The polycrystalline light transmitting film may be formed not only on the entire surface of the glass substrate but also on a part thereof, and may be formed on the high refractive index light transmitting film formed on the glass substrate instead of directly on the glass substrate.
微結晶シリコンあるいは微結晶シリコンアロイ膜形成に
先立ち、多結晶光透過膜の形成を行なうことは、該多結
晶光透過膜が微結晶膜の核形成を助けるため、膜厚の薄
い微結晶膜の形成を可能とする。The formation of the polycrystalline light-transmitting film prior to the formation of the microcrystalline silicon or the microcrystalline silicon alloy film means that the polycrystalline light-transmitting film assists the nucleation of the microcrystalline film, so that the thin crystalline film Allows formation.
通常、ガラス基板上に直接微結晶シリコン膜を形成する
場合、第１図に示す用に300Å以上の膜厚で初めて微結
晶化し、これ以下の膜厚ではアモルフアスとなる。これ
に対して、単結晶基板上では膜厚100Åでも容易に結晶
化しエピタキシヤル成長する。他方、ガラス基板にアモ
ルフアスシリコンを1000Å形成したもの（ガラス/a−Si
基板）やアモルフアスシリコンカーバイドを100Å形成
したもの（ガラス/a−SiC基板）の上では500Å以上の膜
厚が必要である。以上の如く微結晶膜形成の容易さは下
地基板に大きく依存し、本発明のようにガラス基板に30
0ÅのCaF2を形成したもの（ガラス／CaF2基板）では、1
00Åでも微結晶化する。Usually, when a microcrystalline silicon film is directly formed on a glass substrate, microcrystallization occurs for the first time at a film thickness of 300 Å or more, as shown in FIG. On the other hand, on a single crystal substrate, even if the film thickness is 100Å, it easily crystallizes and epitaxially grows. On the other hand, a glass substrate with 1000 Å of amorphous silicon formed (glass / a-Si
Substrate) and amorphous silicon carbide 100Å formed (glass / a-SiC substrate) require a film thickness of 500Å or more. As described above, the ease of forming a microcrystalline film largely depends on the underlying substrate, and the glass substrate is not
One with 0Å CaF 2 formed (glass / CaF 2 substrate)
Even with 00Å, it crystallizes.
ガラス基板にCaF2を形成したもののみならず、SrF2,ZnS
等の薄膜の上では、水素化シリコンあるいは水素化シリ
コンアロイ膜は膜厚100Åでも容易に微結晶化する。こ
れはガラス基板上のCaF2，SrF2,ZnS薄膜等が多結晶であ
るためである。特に、結晶構造及び格子常数が結晶シリ
コンに近いCaF2上では、微結晶化は非常に容易である。
また、CaF2とSrF2等の混晶とし、ａ−SiCやａ−SiGe等
の平均の格子常数に合う様に混晶比を調節することによ
り、より容易に薄膜微結晶膜を得ることが出来る。Not only glass substrates with CaF 2 formed, but also SrF 2 , ZnS
On thin films such as, the silicon hydride or silicon hydride alloy film is easily microcrystallized even with a film thickness of 100Å. This is because the CaF 2 , SrF 2 , ZnS thin films, etc. on the glass substrate are polycrystalline. Especially on CaF 2 whose crystal structure and lattice constant are close to those of crystalline silicon, microcrystallization is very easy.
Further, a mixed crystal of CaF 2 and SrF 2 and the like, and by adjusting the mixed crystal ratio so as to match the average lattice constant of a-SiC, a-SiGe, etc., a thin film microcrystalline film can be obtained more easily. I can.
以下、本発明の実施例を説明する。 Examples of the present invention will be described below.
実施例1. 第２図を用いて説明する。Example 1. Description will be given with reference to FIG.
凹凸ガラス基板１の上に300Å厚のZnS膜２を形成し、さ
らに0.5μｍ厚のパターン状Cr電極３を真空蒸着法によ
り形成した。この上に、150Åのボロンドープｐ型水素
化微結晶シリコンカーバイド4,0.6μｍ厚のｉ型水素化
アモルフアスシリコン5,300Åの隣ドープｎ型水素化微
結晶シリコン６を順次形成した。さらに、Al電極７を形
成し太陽電池とした。Cr電極は間隔100μm,幅５μｍの
ストライプ状に形成した。該Cr電極の遮光率は５％であ
る。ZnSは光学ギヤツプが3.58eVと大きく直接遷移型半
導体であるため光透過率は高く、屈折率が2.8でガラス
の1.45とａ−SiCの3.4の中間にあるため界面反射が小さ
くｐ型水素化微結晶シリコンカーバイドへの光入射率が
高い。従つて本実施例では従来型に比べ光透過率が10％
以上向上し、作製した太陽電池の短絡電流密度も10％以
上増大した。A 300Å thick ZnS film 2 was formed on the uneven glass substrate 1, and a patterned Cr electrode 3 having a thickness of 0.5 μm was further formed by a vacuum deposition method. On this, 150 Å boron-doped p-type hydrogenated microcrystalline silicon carbide 4, 0.6 μm thick i-type hydrogenated amorphous silicon 5,300 Å adjacently-doped n-type hydrogenated microcrystalline silicon 6 was sequentially formed. Further, an Al electrode 7 was formed to make a solar cell. The Cr electrodes were formed in stripes with a spacing of 100 μm and a width of 5 μm. The light shielding rate of the Cr electrode is 5%. Since ZnS has a large optical gap of 3.58 eV and is a direct transition type semiconductor, it has a high light transmittance, and since it has a refractive index of 2.8 and is between 1.45 of glass and 3.4 of a-SiC, it has small interface reflection and p-type hydrogenation. High incidence of light on crystalline silicon carbide. Therefore, in this embodiment, the light transmittance is 10% compared to the conventional type.
As a result, the short-circuit current density of the fabricated solar cell was increased by 10% or more.
実施例2. 第３図を用いて説明する。Example 2. This will be described with reference to FIG.
ガラス基板21の上に屈折率1.8で光透過率の高い、膜厚7
000Åの酸化錫（SnO2）22を予め形成し、更に膜厚200Å
のCaF2膜23を形成した。この上に上記実施例１と同様に
Cr電極３、150Åのボロンドープｐ型水素化微結晶シリ
コン24、0.7μｍ厚のｉ型水素化アモルフアスシリコン
５、300Åの隣ドープｎ型水素化微結晶シリコン６、Al
電極７を形成した。Cr電極は間隔100μm,幅３μｍのス
トライプ状に形成した。該Cr電極の遮光率は３％であ
る。従来型の厚膜の酸化錫透明電極を用いた太陽電池に
比べ短絡電流密度および光電変換効率が10％以上向上し
た。A glass substrate 21 with a refractive index of 1.8 and a high light transmittance, and a film thickness of 7
000Å tin oxide (SnO 2 ) 22 is pre-formed and the film thickness is 200Å
CaF 2 film 23 was formed. On top of this, in the same manner as in the first embodiment
Cr electrode 3, 150 Å boron-doped p-type hydrogenated microcrystalline silicon 24, 0.7 μm thick i-type hydrogenated amorphous silicon 5, 300 Å adjacently-doped n-type hydrogenated microcrystalline silicon 6, Al
The electrode 7 was formed. The Cr electrodes were formed in stripes with a spacing of 100 μm and a width of 3 μm. The light shielding rate of the Cr electrode is 3%. The short-circuit current density and photoelectric conversion efficiency were improved by 10% or more compared to the conventional solar cells using thick-film tin oxide transparent electrodes.
本発明によれば、CaF2，SrF2,ZnSあるいはこれらの混晶
等の多結晶光透過膜の形成により、その上の微結晶シリ
コンあるいは微結晶シリコンアロイ膜の形成が容易にな
るため、膜厚の薄い微結晶シリコンあるいは微結晶シリ
コンアロイ膜を形成することが可能となり、太陽電池の
短絡電流密度および開放電圧を高くでき、したがつて、
光電変換効率を高くできる効果がある。According to the present invention, by forming a polycrystalline light transmitting film such as CaF 2 , SrF 2 , ZnS or a mixed crystal thereof, it becomes easy to form a microcrystalline silicon or a microcrystalline silicon alloy film thereon, It becomes possible to form a thin microcrystalline silicon or microcrystalline silicon alloy film, and it is possible to increase the short-circuit current density and open-circuit voltage of the solar cell.
The photoelectric conversion efficiency can be increased.
第１図は、種々の基板上の水素化シリコン膜の膜厚と光
・暗導電度の関係を示す図、第２図は本発明の実施例１
を示す縦断面図、第３図は本発明の実施例２を示す縦断
面図である。 １…ガラス基板、２…ZnS、３…Cr電極、４…ｐ型水素
化微結晶シリコンカーバイド、５…ｉ型水素化アモルフ
アスシリコン、６…ｎ型水素化微結晶シリコン、７…Al
電極、22…SnO2、23…CaF2、24…ｐ型水素化微結晶シリ
コン。FIG. 1 is a diagram showing the relationship between the film thickness of a silicon hydride film on various substrates and the light / dark conductivity, and FIG. 2 is a first embodiment of the present invention.
FIG. 3 is a vertical cross-sectional view showing Embodiment 2 of the present invention. 1 ... Glass substrate, 2 ... ZnS, 3 ... Cr electrode, 4 ... p type hydrogenated microcrystalline silicon carbide, 5 ... i type hydrogenated amorphous silicon, 6 ... n type hydrogenated microcrystalline silicon, 7 ... Al
Electrodes, 22 ... SnO 2 , 23 ... CaF 2 , 24 ... p-type hydrogenated microcrystalline silicon.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 村松 信一 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (56)参考文献 特開 昭62−213281（ＪＰ，Ａ) 特開 昭62−45079（ＪＰ，Ａ) 特開 昭57−52177（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Shinichi Muramatsu 1-280, Higashi Koigokubo, Kokubunji City, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (56) Reference JP 62-213281 (JP, A) JP Sho 62-45079 (JP, A) JP-A-57-52177 (JP, A)
Claims (1)
いは水素化微結晶シリコンアロイ膜との間に上記水素化
微結晶シリコン膜あるいは水素化微結晶シリコンアロイ
膜と接した透明導電膜が存在しない型の太陽電池におい
て、上記ガラス基板と上記水素化微結晶シリコン膜ある
いは水素化微結晶シリコンアロイ膜との間に、CaF2，Sr
F2およびZnSから成る群の中から選ばれた１種あるいは
これらの混晶から成る多結晶光透過膜が上記水素化微結
晶シリコン膜あるいは水素化微結晶シリコンアロイ膜と
接して形成されていることを特徴とする太陽電池。1. A transparent conductive film which is in contact with the hydrogenated microcrystalline silicon film or the hydrogenated microcrystalline silicon alloy film does not exist between the glass substrate and the hydrogenated microcrystalline silicon film or the hydrogenated microcrystalline silicon alloy film. Type solar cell, CaF 2 , Sr is provided between the glass substrate and the hydrogenated microcrystalline silicon film or the hydrogenated microcrystalline silicon alloy film.
A polycrystalline light transmitting film made of one kind selected from the group consisting of F 2 and ZnS or a mixed crystal thereof is formed in contact with the hydrogenated microcrystalline silicon film or the hydrogenated microcrystalline silicon alloy film. A solar cell characterized by that.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1262885A JPH073878B2 (en) | 1989-10-11 | 1989-10-11 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1262885A JPH073878B2 (en) | 1989-10-11 | 1989-10-11 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03125480A JPH03125480A (en) | 1991-05-28 |
| JPH073878B2 true JPH073878B2 (en) | 1995-01-18 |
Family
ID=17381976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1262885A Expired - Fee Related JPH073878B2 (en) | 1989-10-11 | 1989-10-11 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH073878B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4320154A (en) * | 1980-07-18 | 1982-03-16 | Westinghouse Electric Corp. | Method of forming solar cells by grid contact isolation |
| JPS6245079A (en) * | 1985-08-22 | 1987-02-27 | Kanegafuchi Chem Ind Co Ltd | Substrate for solar cell and manufacture thereof |
| JPH0614555B2 (en) * | 1986-03-14 | 1994-02-23 | 日本板硝子株式会社 | Transparent conductive film |
-
1989
- 1989-10-11 JP JP1262885A patent/JPH073878B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03125480A (en) | 1991-05-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |