JPH0740551B2 - Amorphous silicon semiconductor thin film manufacturing method - Google Patents
Amorphous silicon semiconductor thin film manufacturing methodInfo
- Publication number
- JPH0740551B2 JPH0740551B2 JP59115183A JP11518384A JPH0740551B2 JP H0740551 B2 JPH0740551 B2 JP H0740551B2 JP 59115183 A JP59115183 A JP 59115183A JP 11518384 A JP11518384 A JP 11518384A JP H0740551 B2 JPH0740551 B2 JP H0740551B2
- Authority
- JP
- Japan
- Prior art keywords
- sih
- emission intensity
- plasma
- film
- semiconductor thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 239000010409 thin film Substances 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010408 film Substances 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 150000003377 silicon compounds Chemical class 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 229930195733 hydrocarbon Natural products 0.000 claims description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 150000002367 halogens Chemical class 0.000 claims description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims 1
- 238000000427 thin-film deposition Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GVNVAWHJIKLAGL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)cyclohexan-1-one Chemical compound O=C1CCCCC1C1=CCCCC1 GVNVAWHJIKLAGL-UHFFFAOYSA-N 0.000 description 1
- -1 CH 2 Chemical class 0.000 description 1
- 101100167062 Caenorhabditis elegans chch-3 gene Proteins 0.000 description 1
- 101150065749 Churc1 gene Proteins 0.000 description 1
- 102100038239 Protein Churchill Human genes 0.000 description 1
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 ［発明の技術分野］ 本発明は、プラズマCVD法によりアモルファスシリコン
（以下、a-Siという）系半導体薄膜（a-SiC半導体薄
膜、a-SiN半導体薄膜など）を製造するにあたり、プラ
ズマ中のSiH発光強度が強くなるとアモルファスシリコ
ン系半導体薄膜の製膜速度が大きくなる関係にあるSiH
発光強度を測定することにより、a-Si系半導体薄膜の高
速製膜条件を短時間かつ容易に確立する方法および該方
法により確立された所定の条件下においてa-Si系半導体
薄膜を製造する方法に関する。TECHNICAL FIELD OF THE INVENTION The present invention produces amorphous silicon (hereinafter referred to as a-Si) semiconductor thin films (a-SiC semiconductor thin films, a-SiN semiconductor thin films, etc.) by a plasma CVD method. In doing so, the SiH emission intensity in the plasma increases, and the deposition rate of the amorphous silicon semiconductor thin film increases.
Method for easily and quickly establishing high-speed film forming conditions for an a-Si-based semiconductor thin film by measuring emission intensity, and method for producing an a-Si-based semiconductor thin film under predetermined conditions established by the method Regarding
［従来技術］ 従来、a-Si系半導体薄膜を製造するための条件は、反応
室圧力、RFパワー、ガス分率、合計ガス流量などの条件
を種々変更して製膜し、その膜厚を測定し、膜厚と製造
条件との関係から最適条件を求めている。それゆえ製膜
条件を確立するためには、非常な労力および時間が必要
であるとともに、確立された製膜条件下において製膜す
るばあいでも、製膜開始直後などにおいては、製膜条件
が一定になっていないために、所望のa-Si系半導体薄膜
をうることができないばあいがあるなどの欠点を有して
いる。[Prior Art] Conventionally, the conditions for producing an a-Si-based semiconductor thin film are variously changed under various conditions such as reaction chamber pressure, RF power, gas fraction, and total gas flow rate. The optimum conditions are obtained by measuring and measuring the relationship between the film thickness and the manufacturing conditions. Therefore, it takes a lot of labor and time to establish the film-forming conditions, and even when the film-forming is performed under the established film-forming conditions, the film-forming conditions immediately after the film-forming start, etc. Since it is not constant, it has a defect that a desired a-Si semiconductor thin film may not be obtained.
［発明の概要］ 本発明は前記のごとき事情に鑑み、a-Si系半導体薄膜の
高速製膜条件を短時間かつ容易に確立する方法および該
方法により確立された条件下においてa-Si系半導体薄膜
を製造する方法を確立するためになされたものである。SUMMARY OF THE INVENTION In view of the above circumstances, the present invention provides a method for easily and quickly establishing high-speed film forming conditions for an a-Si semiconductor thin film, and an a-Si semiconductor under the conditions established by the method. This was done to establish a method for producing a thin film.
すなわち本発明は、プラズマCVD法によりシリコン化合
物と炭化水素、そのハロゲン誘導体、アンモニア、N
F3、N2、O2、NO2の１種以上とを含有するガス混合物か
らa-Si系半導体薄膜を製造するにあたり、プラズマ中の
SiH発光強度が強くなるとアモルファスシリコン系半導
体薄膜の製膜速度が大きくなる関係にあるプラズマ中の
SiH発光強度を測定することにより、a-Si系半導体薄膜
の高速製膜条件を短時間かつ容易に確立する方法および
プラズマCVD法によりシリコン化合物と炭化水素、その
ハロゲン誘導体、アンモニア、NF3、N2、O2、NO2の１種
以上とを含有するガス混合物からa-Si系半導体薄膜を製
造するにあたり、プラズマ中のSiH発光強度が強くなる
とアモルファスシリコン系半導体薄膜の製膜速度が大き
くなる関係にあり、 レジデンス・タイム （式中、Ｖは反応室体積、Ｓは排気速度、Ｐは反応室圧
力、Ｑは流量である）におけるプラズマ中のSiH発光強
度、すなわちSiH発光強度の最大値[SiH]Mの90％以上のS
iH強度にて製膜することを特徴とするa-Si系半導体薄膜
の製法に関する。That is, according to the present invention, a silicon compound and a hydrocarbon, a halogen derivative thereof, ammonia, N
In producing an a-Si semiconductor thin film from a gas mixture containing at least one of F 3 , N 2 , O 2 and NO 2 ,
As the SiH emission intensity increases, the deposition rate of amorphous silicon-based semiconductor thin film increases.
A method for easily and quickly establishing high-rate film formation conditions for a-Si semiconductor thin films by measuring SiH emission intensity, and silicon compounds and hydrocarbons, their halogen derivatives, ammonia, NF 3 , and N by the plasma CVD method. In producing an a-Si semiconductor thin film from a gas mixture containing at least one of O 2 , O 2 and NO 2 , when the SiH emission intensity in plasma becomes strong, the deposition rate of the amorphous silicon semiconductor thin film increases. Have a relationship, residence time (Wherein V is the reaction chamber volume, S is the exhaust velocity, P is the reaction chamber pressure, and Q is the flow rate) SiH emission intensity in plasma, that is, 90% or more of the maximum SiH emission intensity [SiH] M S
The present invention relates to a method for producing an a-Si based semiconductor thin film, which is characterized in that it is formed with iH strength.
［発明の実施態様］ 本発明に用いるシリコン化合物とは、SiH4、Si2H6、SiH
(CH3)3、Si(CH3)4、Si(CH3)2H2やSi(CH3)3Clなどのハロ
ゲン化シラン類などのように、ガス状態で存在するシリ
コン化合物単独またはこれらの混合物のことであり、こ
れらシリコン化合物単独またはそれらお混合物は、C
H4、C2H4、CH2＝CHCH3、C2H2、CH2＝CH−CH＝CH2などの
炭化水素、N2、NH3、O2、NF3、N2O、前記炭化水素のハ
ロゲン誘導体の１種以上、さらに要すれば使用されるH2
などとの混合ガスとして使用される。BEST MODE FOR CARRYING OUT THE INVENTION Silicon compounds used in the present invention include SiH 4 , Si 2 H 6 , and SiH.
(CH 3 ) 3 , Si (CH 3 ) 4 , Si (CH 3 ) 2 H 2 and Si (CH 3 ) 3 Cl. These silicon compounds alone or their mixture are C
H 4, C 2 H 4, CH 2 = CHCH 3, C 2 H 2, CH 2 = CHCH = hydrocarbons such as CH 2, N 2, NH 3 , O 2, NF 3, N 2 O, wherein H 2 used in one or more of halogen derivatives of hydrocarbons, and if necessary
It is used as a mixed gas with.
前記のごときシリコン化合物を含有するガス混合物が、
プラズマCVD法によりプラズマ分解され、基板上に堆積
せしめられ、a-Si系半導体薄膜が形成される。A gas mixture containing a silicon compound as described above,
Plasma is decomposed by the plasma CVD method and deposited on the substrate to form an a-Si based semiconductor thin film.
本発明においては、a-Si系半導体薄膜を形成するにあた
り、まず製膜を行なわずに、シリコン化合物を含有する
ガス混合物中のシリコン化合物のガス分率が一定の条件
にて、RFパワー、反応室圧力および全流量を変化させ、
SiH発光強度が最大になる条件を設定する。In the present invention, in forming an a-Si-based semiconductor thin film, first, without performing film formation, under the condition that the gas fraction of the silicon compound in the gas mixture containing the silicon compound is constant, RF power, reaction Change chamber pressure and total flow,
Set the conditions that maximize the SiH emission intensity.
このようにしてSiH発光強度が最大になる条件を設定す
ると、a-Si系半導体薄膜を形成する速度が最大になるこ
とが、本発明に関する検討の結果から明確になってい
る。それゆえ本発明の方法を用いると、実際に製膜をす
ることなく、プラズマ中のSiH発光強度をモニタリング
することのみで高速製膜条件を確立することができる。From the results of the study on the present invention, it has been clarified that the rate of forming the a-Si based semiconductor thin film is maximized by setting the conditions for maximizing the SiH emission intensity in this manner. Therefore, when the method of the present invention is used, high-speed film forming conditions can be established only by monitoring SiH emission intensity in plasma without actually forming a film.
なおSiH発光強度は、第１図に示すように、反応室
（８）に設けられたガラス窓（３）に取り付けた光ファ
イバー（５）、ポリクロメーター（４）、OMA（Optical
Maltichannel analizer）（６）により4100〜4200Åの
発光強度を調べることにより簡単に測定できる。As shown in FIG. 1, the SiH emission intensity was measured using an optical fiber (5) attached to a glass window (3) provided in a reaction chamber (8), a polychromator (4), an OMA (Optical).
It can be easily measured by examining the emission intensity of 4100 to 4200Å by Maltichannel analizer (6).
ガス分率の異なる条件では、上記RFパワー、反応室圧力
は同じで、全流量が上記SiH発光強度最大の条件におけ
るレジデンス・タイム（residence time）τと一致する
ように全流量を設定すると、他のガス分率に対しても薄
膜堆積速度が最大になる条件を設定することができる。
つまりSiH発光強度最大のレジデンス タイムは、ガス
分率に依存せず一定である。Under different gas fraction conditions, the RF power and the reaction chamber pressure are the same, and if the total flow rate is set so that the total flow rate matches the residence time τ under the conditions of maximum SiH emission intensity, It is possible to set conditions for maximizing the thin film deposition rate with respect to the gas fraction.
In other words, the residence time of maximum SiH emission intensity is constant regardless of the gas fraction.
なおレジデンス タイムτは、実験値を用いて下式より
求められる。The residence time τ can be calculated from the following formula using experimental values.
（式中、Ｖは反応室体積、Ｓは排気速度、Ｐは反応室圧
力、Ｑは流量である）プラズマ分解などにより分子数に
変化がおこらないばあい、 が成立する。到達圧力PuよりＰが充分大きいばあいに
は、 （式中、Piはｔ＝ｏでの圧力、ｔは時間である）なる関
係が成立し、したがって （式中、Ｃは定数である）となり、これに実験から求め
たP,tの値を代入して、縦軸をlnP、横軸をｔとしてプロ
ットしたときの傾きからτが求められる。 (In the formula, V is the reaction chamber volume, S is the exhaust velocity, P is the reaction chamber pressure, and Q is the flow rate.) If the number of molecules does not change due to plasma decomposition, Is established. If P is sufficiently higher than the ultimate pressure Pu, (Where Pi is the pressure at t = o and t is the time), and therefore (In the formula, C is a constant), and by substituting the values of P and t obtained from the experiment into this, τ can be obtained from the slope when plotted with the vertical axis being lnP and the horizontal axis being t.
たとえばSiH4のガス分率が小さく、SiH発光強度が求め
にくいばあい、SiH4のガス分率の多きな条件にて反応室
圧力、RFパワー、全流量をSiH発光強度が最大になるよ
うに条件を設定し、所定のガス分率にしたばあいにレジ
デンスタイムが一致するように全流量を設定すると、Si
H発光強度が最大になるように、すなわち薄膜堆積速度
が最大になるように設定することができる。For example, if the SiH 4 gas fraction is small and the SiH emission intensity is difficult to obtain, the reaction chamber pressure, RF power, and total flow rate should be set to maximize the SiH emission intensity under the conditions where the SiH 4 gas fraction is large. When the conditions are set and the total flow rate is set so that the residence times match when the gas fraction is set to
It can be set so that the H emission intensity is maximized, that is, the thin film deposition rate is maximized.
つぎに本発明の方法を第１図にもとづき説明する。Next, the method of the present invention will be described with reference to FIG.
第１図に示す反応室（８）には、RF電極（７）およびヒ
ーター（２）が通常のように設置されており、RF電極
（７）にはRF電源（１）が接続されており、また原料ガ
ス導入ライン（Ａ）が設けられている。一方、反応室
（８）には排気ライン（Ｂ）、SiH発光強度をモニタリ
ングするためのガラス窓（３）が設けられており、該ガ
ラス窓（３）にはモニタリング用の光ファイバー（５）
を介してポリクロメーター（４）およびOMA（６）が取
り付けられている。An RF electrode (7) and a heater (2) are normally installed in the reaction chamber (8) shown in FIG. 1, and an RF power source (1) is connected to the RF electrode (7). Also, a source gas introduction line (A) is provided. On the other hand, the reaction chamber (8) is provided with an exhaust line (B) and a glass window (3) for monitoring the SiH emission intensity, and the glass window (3) has an optical fiber (5) for monitoring.
A polychromator (4) and OMA (6) are attached via.
このような装置を用いて、基板を設置しないで、所定の
ガス分率でプラズマ放電をおこし、SiH発光強度（413〜
428nmの発光強度）が最大になるように、RFパワー、反
応室圧力および全流量を変化させ、薄膜堆積条件を設定
することにより、短時間かつ容易に、非接触的な方法で
高速製膜条件を設定することができる。Using such a device, a plasma discharge is generated at a predetermined gas fraction without installing a substrate, and the SiH emission intensity (413 ~
By changing the RF power, reaction chamber pressure and total flow rate and setting the thin film deposition conditions so that the emission intensity (428 nm) becomes maximum, high-speed film formation conditions can be achieved in a short time, easily and in a non-contact manner. Can be set.
つぎに前記方法により、プラズマ中のSiH発光強度を[Si
H]Mの90％以上の値に設定し、このように設定したグロ
ー放電分解条件下で製膜するa-Si系半導体薄膜の製法に
ついて説明する。Next, the SiH emission intensity in the plasma was measured by [Si
A method for producing an a-Si-based semiconductor thin film, which is set to a value of 90% or more of H] M and is formed under the glow discharge decomposition conditions thus set, will be described.
a-Si系半導体薄膜の形成を、プラズマ中のSiH発光強度
が[SiH]Mの90％以上の条件で行なうと、堆積速度が速く
なる。とくにSiH発光強度が最大となる条件で製膜する
と、堆積速度が最大となる。The deposition rate increases when the a-Si semiconductor thin film is formed under the condition that the SiH emission intensity in plasma is 90% or more of [SiH] M. Especially, when the film is formed under the condition that the SiH emission intensity is maximum, the deposition rate is maximum.
前記のようにプラズマ中のSiH発光強度測定を、a-Si系
半導体薄膜の製造条件の設定に用いるだけでなく、製膜
中もモニタリングをつづけると、放電状態を観察するこ
とができ、製膜条件を製膜中に変更させながら製膜する
こともでき、堆積速度の最適化を自由に行なうというよ
うなことも可能となる。As described above, SiH emission intensity measurement in plasma is not only used to set the manufacturing conditions for the a-Si semiconductor thin film, but if the monitoring is continued during film formation, the discharge state can be observed. Film formation can be performed while changing the conditions during film formation, and the deposition rate can be freely optimized.
つぎに本発明の方法および製法を実施例にもとづき説明
する。Next, the method and manufacturing method of the present invention will be described based on Examples.
実施例１ なる混合ガスを用いて、RFパワー30W、反応室圧力1.5To
rrなる条件で全流量を10〜400sccmの範囲で変化させ、S
iH発光強度と薄膜堆積速度との関係を測定した。それら
の結果を第２図に示す。Example 1 RF power 30W, reaction chamber pressure 1.5To
Under the condition of rr, the total flow rate is changed within the range of 10 to 400 sccm, and S
The relationship between iH emission intensity and thin film deposition rate was measured. The results are shown in FIG.
なおｘは０、0.3および0.65のそれぞれについて測定し
た。ｘ＝０のばあいにはa-Si:H、ｘ＝0.3のばあいにはa
-SiC0.2:H、ｘ＝0.65のばあいにはa-SiC0.4:Hが形成さ
れた。Note that x was measured for each of 0, 0.3 and 0.65. a-Si: H when x = 0, a when x = 0.3.
When -SiC 0.2 : H and x = 0.65, a-SiC 0.4 : H was formed.
実施例２ SiH4、C2H4混合ガスを用いて、RFパワー30W、全流量80s
ccmなる条件で、反応室圧力を第１表のように変化させ
て、SiH発光強度と薄膜堆積速度との関係を測定した。
それらの結果を第１表に示す。Example 2 SiH 4 , C 2 H 4 mixed gas was used, RF power was 30 W, total flow rate was 80 s
Under the condition of ccm, the reaction chamber pressure was changed as shown in Table 1, and the relationship between the SiH emission intensity and the thin film deposition rate was measured.
The results are shown in Table 1.
実施例３ SiH4、C2H4混合ガスを用いて、反応室圧力1.5Torr、全
流量80sccmなる条件で、RFパワーを第２表のように変化
させて、SiH発光強度と薄膜堆積速度との関係を測定し
た。 Example 3 Using a mixed gas of SiH 4 and C 2 H 4 and changing the RF power as shown in Table 2 under the conditions of a reaction chamber pressure of 1.5 Torr and a total flow rate of 80 sccm, the SiH emission intensity and the thin film deposition rate were changed. The relationship was measured.
それらの結果を第２表に示す。The results are shown in Table 2.
実施例１〜３の結果から、SiH発光強度が大きくなると
薄膜堆積速度が大きくなることがわかる。 From the results of Examples 1 to 3, it is understood that the thin film deposition rate increases as the SiH emission intensity increases.
実施例４ SiH4、C2H4混合ガス全流量を20〜400sccmの範囲で変化
させ、先程の圧力と時間との関係からτを求め、そのと
きの発光強度との関係を求めた。それらの結果を第３図
に示す。Example 4 The total flow rate of SiH 4 and C 2 H 4 mixed gas was changed in the range of 20 to 400 sccm, τ was calculated from the relationship between the pressure and time, and the relationship with the emission intensity at that time was calculated. The results are shown in FIG.
第３図からSiH4のガス分率に関係なく、レジデンス・タ
イムτ＝約4.5secにてSiHの発光強度が最大となること
がわかる。つまり異なるガス分率においてもレジデンス
・タイムで堆積速度最大となる条件が設定できることが
わかる。It can be seen from FIG. 3 that the emission intensity of SiH reaches its maximum at the residence time τ = about 4.5 sec regardless of the gas fraction of SiH 4 . In other words, it can be seen that the conditions that maximize the deposition rate can be set by the residence time even with different gas fractions.
第１図は本発明の方法に関する説明図、第２図は実施例
１において、全流量をパラメータとして変化させたばあ
いのSiH発光強度と薄膜堆積速度との関係を示すグラ
フ、第３図は実施例４において、ガスフラクションｘ＝
０、0.3、0.65、0.76、0.86のばあいのレジデンス・タ
イムτとSiH発光強度との関係を示すグラフである。FIG. 1 is an explanatory view of the method of the present invention, FIG. 2 is a graph showing the relationship between SiH emission intensity and thin film deposition rate when the total flow rate was changed as a parameter in Example 1, and FIG. In Example 4, gas fraction x =
6 is a graph showing the relationship between residence time τ and SiH emission intensity in the cases of 0, 0.3, 0.65, 0.76 and 0.86.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭59−94810（ＪＰ，Ａ) 特開 昭58−182217（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-59-94810 (JP, A) JP-A-58-182217 (JP, A)
Claims (8)
化水素、そのハロゲン誘導体、アンモニア、NF3、N2、O
2、NO2の１種以上とを含有するガス混合物からアモルフ
ァスシリコン系半導体薄膜を製造するにあたり、プラズ
マ中のSiH発光強度が強くなるとアモルファスシリコン
系半導体薄膜の製膜速度が大きくなる関係にあるプラズ
マ中のSiH発光強度を測定することにより、アモルファ
スシリコン系半導体薄膜の高速製膜条件を短時間かつ容
易に確立する方法。1. A silicon compound and a hydrocarbon, a halogen derivative thereof, ammonia, NF 3 , N 2 and O by a plasma CVD method.
2. In producing an amorphous silicon semiconductor thin film from a gas mixture containing at least one of NO 2 and NO 2 , plasma has a relation that the film formation rate of the amorphous silicon semiconductor thin film increases as the SiH emission intensity in the plasma increases. A method for easily establishing high-speed film formation conditions for amorphous silicon semiconductor thin films in a short time by measuring the SiH emission intensity.
上である特許請求の範囲第１項記載の方法。2. The method according to claim 1, wherein the silicon compound is at least one of Si 2 H 6 and SiH 4 .
化水素、そのハロゲン誘導体、アンモニア、NF3、N2、O
2、NO2の１種以上とを含有するガス混合物からアモルフ
ァスシリコン系半導体薄膜を製造するにあたり、プラズ
マ中のSiH発光強度が強くなるとアモルファスシリコン
系半導体薄膜の製膜速度が大きくなる関係にあり、 レジデンス・タイム （式中、Ｖは反応室体積、Ｓは排気速度、Ｐは反応室圧
力、Ｑは流量である）におけるプラズマ中のSiH発光強
度、すなわちSiH発光強度の最大値[SiH]Mの90％以上のS
iH発光強度にて製膜することを特徴とするアモルファス
シリコン系半導体薄膜の製法。3. A silicon compound and a hydrocarbon, a halogen derivative thereof, ammonia, NF 3 , N 2 , O by a plasma CVD method.
2 , when producing an amorphous silicon-based semiconductor thin film from a gas mixture containing at least one of NO 2 , there is a relation that the film formation rate of the amorphous silicon-based semiconductor thin film increases as the SiH emission intensity in plasma increases. Residence time (Wherein, V is the reaction chamber volume, S is the pumping speed, P is a reaction chamber pressure, Q is the flow rate) SiH emission intensity in the plasma at, that is, the maximum value of the SiH emission intensity [SiH] M 90% or more S
A method for producing an amorphous silicon-based semiconductor thin film, which is characterized by forming a film with iH emission intensity.
H]Mの90％以上に調整したのち製膜する特許請求の範囲
第３項記載の製法。4. The intensity of SiH emission in plasma is measured in advance by [Si
H] The method according to claim 3, wherein the film is formed after adjusting it to 90% or more of M.
件下で製膜する特許請求の範囲第３項または第４項記載
の製法。5. The production method according to claim 3 or 4, wherein the film is formed under the condition that the SiH emission intensity in the plasma is maximum.
しながら製膜する特許請求の範囲第３項、第４項または
第５項記載の製法。6. The method according to claim 3, 4, or 5, wherein the film is formed while monitoring the SiH emission intensity in plasma.
グしながら、かつかえながら製膜する特許請求の範囲第
３項、第４項、第５項または第６項記載の製法。7. The method according to claim 3, claim 4, claim 5, or claim 6, wherein the film is formed while monitoring the SiH emission intensity in the plasma while changing the film.
上である特許請求の範囲第３項、第４項、第５項、第６
項または第７項記載の製法。8. The scope of claims 3, 4, 5, and 6 wherein the silicon compound is at least one of Si 2 H 6 and SiH 4 .
The method according to item 7 or 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59115183A JPH0740551B2 (en) | 1984-06-04 | 1984-06-04 | Amorphous silicon semiconductor thin film manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59115183A JPH0740551B2 (en) | 1984-06-04 | 1984-06-04 | Amorphous silicon semiconductor thin film manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60257516A JPS60257516A (en) | 1985-12-19 |
| JPH0740551B2 true JPH0740551B2 (en) | 1995-05-01 |
Family
ID=14656408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59115183A Expired - Fee Related JPH0740551B2 (en) | 1984-06-04 | 1984-06-04 | Amorphous silicon semiconductor thin film manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0740551B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5324966B2 (en) | 2009-03-06 | 2013-10-23 | 三菱重工業株式会社 | Photoelectric conversion device manufacturing method and film forming device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182217A (en) * | 1982-04-19 | 1983-10-25 | Oki Electric Ind Co Ltd | Thin film forming method |
| JPS5994810A (en) * | 1982-11-22 | 1984-05-31 | Agency Of Ind Science & Technol | Production of amorphous silicon film |
-
1984
- 1984-06-04 JP JP59115183A patent/JPH0740551B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60257516A (en) | 1985-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1547138B1 (en) | Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition | |
| Harper et al. | Reinvestigation of the HSiCl electronic spectrum: Experimental reevaluation of the geometry, rotational constants, and vibrational frequencies | |
| JPS5930130B2 (en) | Vapor phase growth method | |
| EP0936282A3 (en) | Low-k fluorinated amorphous carbon dielectric and method of making the same | |
| JPH0740551B2 (en) | Amorphous silicon semiconductor thin film manufacturing method | |
| JPS6314421A (en) | Plasma chemical vapor deposition method | |
| KR950012607A (en) | Method for pretreating aluminum containing surfaces of deposition chamber before depositing tungsten silicide coating on semiconductor substrate | |
| JPH06151421A (en) | Formation of silicon nitride thin film | |
| Yu et al. | Effect of gas pressure on the synthesis of carbon nitride films during plasma-enhanced chemical vapor deposition | |
| Durrant et al. | PECVD of amorphous hydrogenated oxygenated nitrogenated carbon films | |
| JPS6293382A (en) | Thin film forming device | |
| JP2003007624A (en) | Process monitoring method for thin film manufacturing apparatus and thin film manufacturing apparatus having process monitor | |
| EP1207215A3 (en) | A method for fabricating a III-V nitride film and an apparatus for fabricating the same | |
| JPH07100860B2 (en) | Method for forming tungsten silicide film | |
| Jauberteau et al. | Deposition of Silicon Nitride thin films by reaction of SiH4 in a nitrogen post-discharge | |
| JP3071854B2 (en) | Diamond film fabrication method and its evaluation method | |
| Bárdoš et al. | Nitrogen activation for plasma chemical synthesis of thin Si3N4 films | |
| JP2002069648A (en) | Inner wall deposit detection method for film forming apparatus and film forming apparatus with monitoring device | |
| JP2539990B2 (en) | Method for forming titanium compound film | |
| JP2002343792A (en) | Film forming method and apparatus | |
| JPS63166972A (en) | Plasma cvd method | |
| JPH05121332A (en) | Method and apparatus for forming functional deposited film | |
| JPH0797557B2 (en) | Plasma CVD method | |
| JPH08250434A (en) | Deposition method of polycrystalline Si thin film | |
| Delahoy | High rate photochemical deposition of amorphous silicon from higher silanes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |