JPH0743331B2 - Detector - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a detection device for detecting the crystal orientation of an ingot made of a single crystal semiconductor material.

[Background technology]

A single crystal of a compound semiconductor such as silicon or GaAs used in the manufacture of a semiconductor device is formed as a rod-shaped ingot by pulling up a seed in a crucible using a so-called Czochralski method.

In order to form an orientation flat at a predetermined angle with respect to the crystal orientation of the ingot thus formed, it is necessary to measure the crystal orientation of the ingot. It is necessary to measure whether the angle is a predetermined angle with respect to.

Conventionally, the crystal orientation is discriminated from the position of a crystal habit line formed along the axial direction on the outer peripheral surface of the ingot, or the crystal orientation is discriminated by an optical image method. The optical imaging method polishes the surface of the ingot and forms a fine facet surface by selective etching.
This is a method in which a thin light beam is projected onto this to form a reflected light image on the screen. These methods do not have good detection accuracy.

By the way, such a single crystal ingot tends to have a large diameter and a long size for reasons such as high density and efficiency of circuit formation and cost reduction.

Therefore, it becomes difficult to detect the crystal orientation before forming the orientation flat of the single crystal ingot or to cut the orientation flat or to perform other processing,
This is becoming a problem in terms of work safety and detection accuracy.

For this, for example, a single crystal ingot may be placed vertically and attached to a goniometer with a fixing jig to measure the crystal orientation or to measure whether or not the crystal orientation on the orientation flat forming surface has a predetermined angle. .

However, as described above, the single crystal ingot has a large diameter and a large size, resulting in a large weight, which results in instability in handling and fixing, resulting in a decrease in safety and measurement accuracy. In addition to the above, the present inventor has found that the structure of the device becomes large and problems such as increase in cost and deterioration of space efficiency occur.

For single crystal pulling and crystal cutting / polishing,
It is explained in "Electronic Materials", November 1983 issue, Supplement, P45-P56, published by Industrial Research Institute Co., Ltd., November 15, 1982.

[Object of the Invention]

An object of the present invention is to provide a technique capable of easily and highly accurately detecting the crystal orientation of a semiconductor material.

Another object of the present invention is to provide a technique for detecting a crystal orientation of a semiconductor material which is small and can be manufactured at low cost.

The above and other objects and novel features of the present invention will be apparent from the description of the present specification and the accompanying drawings.

[Outline of Invention]

The outline of a typical invention among the inventions disclosed in the present application will be briefly described as follows.

That is, a device for detecting the crystal orientation of a single crystal ingot of a semiconductor material using X-ray diffraction, in which the ingot is installed horizontally on a pair of rotating rollers and rotated on the rotating rollers. The X-ray receiver disposed below the ingot, which irradiates the X-ray from the X-ray projector disposed below the ingot around the ingot and reflects the reflected X-rays under the ingot similarly to the X-ray projector. By receiving the light by means of, it is possible to easily perform the crystal orientation detection device with high accuracy, and to reduce the size and cost of the device.

[Related technology]

FIG. 1 is a perspective view showing a detection device which is a related art of the present invention, and the related art will be described before describing an embodiment of the present invention.

The detector shown in the figure shows a state in which the crystal orientation is detected by X-ray diffraction in order to form the orientation flat of the silicon single crystal. Is provided with a table 2, and a pair of rotatable rollers 3 are horizontally arranged in a recess formed in the axial direction on the upper surface side of the table 2 so as to be manually rotatable by a handle 4. In addition, for example, a single crystal ingot 5 of silicon is rotatably mounted horizontally.

An X-ray drive unit 6 is arranged at one side end of the table 2, and an X-ray drive unit 6 movable along a groove of a substantially crescent-shaped grooved pedestal 7 is provided at one side end of an upper portion of the X-ray drive unit 6. A line projector 8 is arranged to project X-rays on the outer peripheral surface of the top of the single crystal ingot 5, and an X-ray receiver 9 similarly receives the reflected light of the X-rays from the single crystal ingot 5. It is installed in an angular relationship. The X-ray receiver 9 is configured to display the received power of X-rays on the power meter 11 via the amplifier 10.

On the other hand, above the single crystal ingot 5, there is provided a mark pen 13 which is axially movable along a slide shaft 12 parallel to the single crystal ingot 5 so as to write a mark on a predetermined axial direction portion of the single crystal ingot 5. It is provided. The vertical position of the single crystal ingot 5 can be changed by moving the pair of rollers 3 in parallel to each other or moving them away from each other.

Next, the procedure for measuring the crystal orientation by the detection device will be described.

First, when a predetermined crystal orientation is detected to form an orientation flat in the axial direction of the silicon single crystal ingot 5, the single crystal ingot 5 is placed horizontally on the pair of rollers 3. Then, when the handle 4 is turned to rotate the roller 3 in the clockwise direction, for example, the single crystal ingot 5 also rotates in the clockwise direction.

The X-ray projector 8 is attached to the rotating single crystal ingot 5.
When the X-ray from is irradiated on the outer peripheral surface of the top, the reflected light is received by the X-ray receiver 9. This received light power varies depending on the crystal orientation of the single crystal ingot 5 due to X-ray diffraction, and light is emitted only in a specific direction, but the orientation flat is cut in this crystal orientation portion.

Therefore, the worker proceeds with the work while visually observing the X-ray receiving power meter 11, and when the rotation of the handle 4 is stopped when the received power becomes maximum, that portion is the crystal orientation portion where the orientation flat should be formed. ,
It is sufficient to mark the portion in the axial direction with the mark pen 13.

The detecting device can also be used to detect whether or not the flat surface has a predetermined crystal orientation after processing the orientation flat.

〔Example〕

FIG. 2 is a schematic sectional view showing an embodiment of the present invention. In the detection apparatus shown in FIG. 2, after the orientation flat 14 is processed on the single crystal ingot 5, it is detected whether or not the crystal orientation with respect to the flat surface has a predetermined accuracy.

The X-ray projector 8 and the X-ray receiver 9 in this embodiment are attached to a crescent-shaped pedestal 7a and are contained in the box 1 below the table 2. The pedestal 7a is configured to swing in a direction along the rotation direction of the single crystal ingot 5 as shown in FIG.

Therefore, as shown in the drawing, while rotating the single crystal ingot 5 on which the orientation flat 14 is formed on the roller 3 and swinging the pedestal 7a, X-rays are emitted from the X-ray projector 8 to the lower outer periphery of the single crystal ingot 5. Irradiate the surface. Then, when the position of the orientation flat 14 is downward as shown in the drawing, the roller 3 is stopped and the pedestal is stopped.
When X-rays are irradiated while swinging 7a, the X-ray irradiation / reflection angle α between the X-ray projector 8 and the X-ray receiver 9 is constant, so that the crystal orientation in each part of the orientation flat 14 in the circumferential direction is large. X is whether or not is the predetermined accuracy
It can be detected from the received light power of the line light receiver 9. As shown in FIG. 2, by providing the X-ray projector 8 and the X-ray receiver 9 in the box body 1 provided below the table 2, a wide space above the roller 3 can be secured. Therefore, the single crystal ingot 5 can be easily placed on the roller 3 and can be easily attached and detached.

Of course, the detection device shown in the figure can also be used when detecting the crystal orientation for forming the orientation flat on the single crystal ingot 5.

〔effect〕

(1). As a result of supporting a rod-shaped single crystal ingot made of a semiconductor material in a horizontal state, irradiating it with X-rays, receiving the reflected light, and detecting the crystal orientation by X-ray diffraction. Even with a single crystal ingot that has a large diameter and a long length, the position where the orientation flat is formed is detected, and whether the position where the orientation flat is formed has a predetermined crystal orientation is detected with high accuracy. can do.

(2). According to the above (1), the yield of crystal production is improved, and the quality of crystal products is improved.

(3). By the above (1), downsizing and cost reduction of the device can be realized.

(4). By disposing the single crystal ingot horizontally on the pair of rotating rollers and supporting the single crystal ingot so as to be rotatable on the rotating rollers, the crystal orientation can be detected by a small-sized device.

(5). By arranging the X-ray projector and the X-ray receiver below the single crystal ingot, the X-ray projector and the X-ray receiver are arranged above the roller for supporting the single crystal ingot when the single crystal ingot is attached to and detached from the roller. There are no obstacles,
Not only can the device be made smaller, but the work of attaching and detaching the single crystal ingot to the device becomes easier.

Although the invention made by the present invention has been specifically described based on the above embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Nor.

For example, the X-ray projector and the light receiver may be arranged in another arrangement, or the rollers may be automatically rotated.

[Field of application]

In the above description, the crystal orientation of the single crystal ingot of silicon, which is the field of application that was the background of the present invention mainly made by the present inventor, was described for the case of detecting when forming an orientation flat, The present invention is not limited to this, and the present invention can be applied to a single crystal ingot made of a compound semiconductor material such as GaAs.

[Brief description of drawings]

FIG. 1 is a perspective view showing a detection device which is a related art.
FIG. 2 is a schematic sectional view showing a detection device according to an embodiment of the present invention. 1 ... Box, 2 ... Table, 3 ... Rotable roller, 4 ... Handle, 5 ... Single crystal ingot, 6 ...
X-ray drive unit, 7, 7a ... Pedestal, 8 ... X-ray projector, 9 ...
X-ray receiver, 10 ... Amplifier, 11 ... Power meter, 12 ...
… Slide axis, 13 …… Mark pen, 14 …… Orientation flat.

Front page continuation (72) Hirofumi Shimizu Inventor Hirofumi Shimizu Nishihachiman, Ryuo-cho, Nakakoma-gun, Yamanashi (no address) Inside the Kofu branch factory, Musashi Plant, Hitachi Ltd. Electric Machinery Co., Ltd. (56) Reference JP-A-51-31255 (JP, A) JP-A-50-158063 (JP, A)

Claims (2)

[Claims] 1. An apparatus for detecting a crystal orientation of a rod-shaped single crystal ingot made of a semiconductor material by utilizing X-ray diffraction, comprising a pair of rotating rollers for rotatably supporting the ingot in a horizontal state. X that irradiates X-rays around the ingot that is arranged below the ingot and that is rotated on the rotating roller.
A detection device comprising a line projector and an X-ray receiver arranged below the ingot and receiving the reflected light of the X-rays, and detecting the crystal orientation of the ingot. 2. The X-ray projector and the X-ray receiver are attached to a pedestal provided under the ingot so as to be swingable in a direction along the circumferential direction of the ingot so as to be capable of projecting and receiving light between them. 2. The X-ray receiver irradiates the X-rays emitted from the X-ray projector onto the lower outer peripheral surface of the ingot and reflected by the X-ray receiver while swinging the pedestal. Detection device.