JPH0744140B2 - X-ray exposure mask and method of manufacturing the same - Google Patents
X-ray exposure mask and method of manufacturing the sameInfo
- Publication number
- JPH0744140B2 JPH0744140B2 JP8958587A JP8958587A JPH0744140B2 JP H0744140 B2 JPH0744140 B2 JP H0744140B2 JP 8958587 A JP8958587 A JP 8958587A JP 8958587 A JP8958587 A JP 8958587A JP H0744140 B2 JPH0744140 B2 JP H0744140B2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- support
- mask
- boron nitride
- transparent support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 28
- 229910052582 BN Inorganic materials 0.000 claims description 27
- 239000006096 absorbing agent Substances 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 13
- -1 nitrogen ions Chemical class 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000001015 X-ray lithography Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、例えばＸ線リソグラフィ等に用いられるＸ
線露光用マスクとその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to X-ray lithography used in X-ray lithography and the like.
The present invention relates to a line exposure mask and a method for manufacturing the same.
第３図は、Ｘ線露光用マスクの製造工程の一例を示す図
である。FIG. 3 is a diagram showing an example of a manufacturing process of an X-ray exposure mask.
まず、例えばシリコン単結晶基板から成るマスク支持体
２を用意し（同図（Ａ））、その上にＸ線透過性支持体
４をCVD法、PVD法等によって形成する（同図（Ｂ））。
このＸ線透過性支持体４としては、放熱の観点から熱伝
導率が、かつ変形防止の観点から硬度がそれぞれ高いも
のが好ましく、従来は通常、窒化ホウ素（BN）膜または
窒化シリコン（SiNx）膜が用いられている。そしてその
上に、例えばAu,Ta、Ｗ等から成るＸ線吸収体６をCVD
法、PVD法等によって形成する（同図（Ｃ））。これに
よって、パターニング等の加工をする前のマスク（マス
クブランクス）７が得られる。First, a mask support 2 made of, for example, a silicon single crystal substrate is prepared (FIG. 3A), and an X-ray transparent support 4 is formed thereon by a CVD method, a PVD method or the like (FIG. 2B). ).
It is preferable that the X-ray transparent support 4 has a high thermal conductivity from the viewpoint of heat dissipation and a high hardness from the viewpoint of prevention of deformation. Conventionally, a boron nitride (BN) film or a silicon nitride (SiNx) is usually used. Membranes are used. Then, an X-ray absorber 6 made of, for example, Au, Ta, W, etc.
Method, PVD method, etc. (Fig. (C)). As a result, a mask (mask blanks) 7 before being subjected to processing such as patterning is obtained.
その後は例えば、Ｘ線吸収体６の上にレジストパターン
８を形成した後（同図（Ｄ））、Ｘ線吸収体６をイオン
エッチング等によってパターニングし（同図（Ｅ））、
最後にウエットエッチング等によってＸ線透過性支持体
４をエッチング停止層としてマスク支持体２に窓あけを
行うと、最終的に加工されたＸ線露光用マスク10が得ら
れる（同図（Ｆ））。After that, for example, after forming the resist pattern 8 on the X-ray absorber 6 (FIG. 3D), the X-ray absorber 6 is patterned by ion etching or the like (FIG. 2E).
Finally, a window is opened in the mask support 2 by using the X-ray transparent support 4 as an etching stop layer by wet etching or the like to obtain a finally processed X-ray exposure mask 10 (FIG. 6 (F)). ).
上記Ｘ線透過性支持体４に従来用いられている窒化ホウ
素膜は、六方晶窒化ホウ素（ｈ−BN）から成るものであ
るため、ある程度の熱伝導率および硬度を有しているも
のの、それらはまだ十分ではなく、そのためＸ線照射時
にＸ線吸収体６の変形を招く恐れがあった。Since the boron nitride film conventionally used for the X-ray transparent support 4 is made of hexagonal boron nitride (h-BN), it has a certain degree of thermal conductivity and hardness. Is not yet sufficient, and therefore there is a risk that the X-ray absorber 6 may be deformed during X-ray irradiation.
即ち、Ｘ線照射時にＸ線吸収体６はＸ線の吸収によって
発熱し、その熱がＸ線透過性支持体４に伝わるが、当該
Ｘ線透過性支持体４の熱伝導率や硬度が不十分だと、そ
の熱によってＸ線透過性支持体４がたわむ等して変形
し、それに伴っててその上のＸ線吸収体６も変形し、そ
の結果正確なパターン転写が行えなくなる。That is, the X-ray absorber 6 generates heat by absorbing X-rays during X-ray irradiation, and the heat is transmitted to the X-ray transparent support 4, but the thermal conductivity and hardness of the X-ray transparent support 4 are unsatisfactory. If sufficient, the heat causes the X-ray permeable support body 4 to be deformed by bending, and the X-ray absorber 6 thereon is also deformed, and as a result, accurate pattern transfer cannot be performed.
同様の問題は、上記窒化シリコン膜の場合にも存在す
る。The same problem exists in the case of the above silicon nitride film.
そこでこの発明は、このような問題点を解決したＸ線露
光用マスクとその製造方法を提供することを目的とす
る。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an X-ray exposure mask and a method for manufacturing the same, which solves such problems.
この発明のＸ線露光用マスクは、前述したようなＸ線透
過性支持体が、立方晶窒化ホウ素を含む窒化ホウ素系膜
から成ることを特徴とする。The mask for X-ray exposure of the present invention is characterized in that the X-ray transparent support as described above is made of a boron nitride based film containing cubic boron nitride.
この発明の製造方法は、前述したようなＸ線透過性支持
体を、真空中でマスク支持体に対して、ホウ素の蒸着と
加速された窒素イオンの照射とを行うことによって形成
することを特徴とする。The manufacturing method of the present invention is characterized in that the X-ray transparent support as described above is formed by subjecting the mask support to vacuum deposition of boron and irradiation of accelerated nitrogen ions in a vacuum. And
この発明のＸ線露光用マスクにおいては、Ｘ線透過性支
持体が立方晶窒化ホウ素（Ｃ−BN）を含む窒化ホウ素系
膜から成っていて従来の窒化ホウ素膜や窒化シリコン膜
よりも高硬度かつ高熱伝導率であるため、Ｘ線照射時の
当該Ｘ線透過性支持体の温度上昇やそれに伴う変形が抑
えられる。その結果、当該Ｘ線透過性支持体上のＸ線吸
収体の変形も抑えられ、正確なパターン転写が可能とな
る。In the X-ray exposure mask of the present invention, the X-ray transparent support is made of a boron nitride-based film containing cubic boron nitride (C-BN) and has a higher hardness than conventional boron nitride films and silicon nitride films. In addition, since it has a high thermal conductivity, the temperature rise of the X-ray transparent support during X-ray irradiation and the accompanying deformation can be suppressed. As a result, the deformation of the X-ray absorber on the X-ray transparent support is also suppressed, and accurate pattern transfer is possible.
また、この発明の製造方法によれば、従来の方法では得
られなかった立方晶窒化ホウ素を含む窒化ホウ素系膜
が、Ｘ線透過性支持体としてマスク支持体上に形成され
る。Further, according to the manufacturing method of the present invention, a boron nitride-based film containing cubic boron nitride, which cannot be obtained by the conventional method, is formed on the mask support as an X-ray transparent support.
第１図は、この発明に係るＸ線露光用マスクを示す概略
断面図である。FIG. 1 is a schematic sectional view showing an X-ray exposure mask according to the present invention.
この実施例のＸ線露光用マスク12は、例えば前述したよ
うなＸ線吸収体６と、それを支持するＸ線透過性支持体
14と、それを支持する例えば前述したようなマスク支持
体２とを有しており、Ｘ線透過性支持体14は、立方晶窒
化ホウ素を含む窒化ホウ素系膜から成る。尚、図示例で
はＸ線吸収体６あるいはマスク支持体２はパターニング
あるいは窓あけ等の加工が成されていないものを示す
が、それらは例えば第３図（Ｄ）〜（Ｆ）のような工程
を経る等して適宜加工される。The X-ray exposure mask 12 of this embodiment includes, for example, the above-mentioned X-ray absorber 6 and an X-ray transparent support that supports the X-ray absorber 6.
The X-ray transparent support 14 comprises a boron nitride-based film containing cubic boron nitride, and the mask support 2 supports the mask support 2 as described above. In addition, in the illustrated example, the X-ray absorber 6 or the mask support 2 is not processed such as patterning or windowing, but these are, for example, steps shown in FIGS. 3D to 3F. And processed appropriately.
上記Ｘ線透過性支持体14は、立方晶窒化ホウ素を含むた
め、従来の窒化ホウ素膜や窒化シリコン膜よりも硬度お
よび熱伝導率が高い。例えば、従来の窒化ホウ素膜を構
成する六方晶窒化ホウ素は窒化シリコンよりも熱伝導率
が高いがそれでも約0.8W/cmK程度であるのに対して、立
方晶窒化ホウ素の熱伝導率は約13W/cmK程度もある。Since the X-ray transparent support 14 contains cubic boron nitride, it has higher hardness and higher thermal conductivity than conventional boron nitride films and silicon nitride films. For example, while the hexagonal boron nitride forming the conventional boron nitride film has a higher thermal conductivity than silicon nitride, it is still about 0.8 W / cmK, whereas the cubic boron nitride has a thermal conductivity of about 13 W. There is also about / cmK.
勿論上記Ｘ線透過性支持体14はＸ線透過性も良く、例え
ば膜厚が４μｍの場合の波長10ÅのＸ線に対する透過率
は70％以上であった。Of course, the X-ray transparent support 14 also has a good X-ray transparency, and for example, when the film thickness is 4 μm, the transmittance for X-rays having a wavelength of 10Å is 70% or more.
従って上記のようなＸ線透過性支持体14を有するＸ線露
光用マスク12においては、Ｘ線透過性支持体14が高硬度
かつ高熱伝導率であるため、Ｘ線照射時の当該Ｘ線透過
性支持体14の温度上昇やそれに伴うたわみ、反り等の変
形が抑えられる。その結果、Ｘ線透過性支持体14上のＸ
線吸収体６の変形も抑えられ、正確なパターン転写が可
能となる。Therefore, in the X-ray exposure mask 12 having the X-ray transparent support 14 as described above, since the X-ray transparent support 14 has high hardness and high thermal conductivity, the X-ray transmission during X-ray irradiation is high. It is possible to suppress the temperature rise of the flexible support 14 and the accompanying deformation such as bending and warping. As a result, X on the X-ray transparent support 14
Deformation of the line absorber 6 is also suppressed, and accurate pattern transfer is possible.
次に、上記のようなＸ線露光用マスク12の製造方法を、
そのＸ線透過性支持体14の形成工程を主体に説明する。Next, a method of manufacturing the X-ray exposure mask 12 as described above,
The process of forming the X-ray transparent support 14 will be mainly described.
第２図は、この発明に係る製造方法を実施する装置の一
例を示す概略図である。FIG. 2 is a schematic view showing an example of an apparatus for carrying out the manufacturing method according to the present invention.
真空容器（図示省略）内に、前述したようなマスク支持
体２をホルダ24に取り付けて収納しており、当該マスク
支持体２に向けて蒸発源16およびイオン源26を配置して
いる。The mask support 2 as described above is attached and housed in the holder 24 in a vacuum container (not shown), and the evaporation source 16 and the ion source 26 are arranged toward the mask support 2.
蒸発源16は、この例では電子ビーム蒸発源であり、蒸発
材料18としてホウ素金属を有しており、それを電子ビー
ムによって加熱蒸気化して得られるホウ素20をマスク支
持体２の表面に蒸着させることができる。もっとも、こ
のような電子ビーム蒸発源の代わりに、ホウ素金属から
成るターゲットをスパッタさせる方式の蒸発源、あるい
はホウ素金属から成るカソードにおける真空アーク放電
によってホウ素を蒸発させる方式の蒸発源等を用いるこ
ともできる。The evaporation source 16 is an electron beam evaporation source in this example, and has boron metal as an evaporation material 18, and boron 20 obtained by heating and vaporizing it with an electron beam is deposited on the surface of the mask support 2. be able to. However, instead of such an electron beam evaporation source, it is also possible to use an evaporation source of a method in which a target made of boron metal is sputtered, or an evaporation source of a method in which boron is evaporated by vacuum arc discharge in a cathode made of boron metal. it can.
マスク支持体２に対するホウ素20の蒸着速度あるいはマ
スク支持体２上に形成される膜の膜厚は、膜厚モニタ22
によって計測することができる。The deposition rate of boron 20 on the mask support 2 or the film thickness of the film formed on the mask support 2 is measured by the film thickness monitor 22.
Can be measured by
イオン源26は、この例ではプラズマ閉じ込めに多極磁場
を用いるバケット型イオン源であり、供給された窒素ガ
スＧをイオン化して均一で大面積の窒素イオン（窒素イ
オンビーム）28を加速してマスク支持体２の表面に向け
て照射することができる。もっとも、このようなバケッ
ト型イオン源の代わりに、他のタイプのイオン源を用い
ることもできる。In this example, the ion source 26 is a bucket type ion source that uses a multipole magnetic field for plasma confinement, and ionizes the supplied nitrogen gas G to accelerate uniform and large-area nitrogen ions (nitrogen ion beam) 28. Irradiation can be performed toward the surface of the mask support 2. However, instead of such a bucket type ion source, another type of ion source can be used.
処理に際しては、真空容器内を例えば10-5〜10-7Torr程
度まで排気した後、蒸発源16からのホウ素20をマスク支
持体２上に蒸着させるのと同時に、またはそれと交互
に、イオン源26からの窒素イオン28をマスク支持体２に
向けて照射する。In the processing, after evacuation of the vacuum vessel to, for example, about 10 −5 to 10 −7 Torr, the boron 20 from the evaporation source 16 is vapor-deposited on the mask support 2 or at the same time as the ion source. Irradiate nitrogen ions 28 from 26 toward the mask support 2.
その際、マスク支持体２へ蒸着させるホウ素Ｂとマスク
支持体２へ照射する窒素イオンＮとの粒子比（組成比）
B/Nを適切な値、例えば0.7〜2.0程度の範囲内に選ぶの
が好ましい。At that time, the particle ratio (composition ratio) of boron B vapor-deposited on the mask support 2 and nitrogen ions N irradiated on the mask support 2
It is preferable to select B / N within an appropriate value, for example, in the range of about 0.7 to 2.0.
上記処理の結果、マスク支持体２の表面に、前述したよ
うな立方晶窒化ホウ素を含む窒化ホウ素系膜から成るＸ
線透過性支持体14（第１図参照）が形成される。ちなみ
にその後は、例えば前述したような公知のCVD法、PVD法
等によって、当該Ｘ線透過性支持体14上に前述したよう
なＸ線吸収体６を形成すれば良い。その結果、第１図に
示すようなＸ線露光用マスク12が得られる。As a result of the above-mentioned treatment, the surface of the mask support 2 is made of a boron nitride-based film containing cubic boron nitride as described above.
A linearly transparent support 14 (see FIG. 1) is formed. Incidentally, after that, the X-ray absorber 6 as described above may be formed on the X-ray transparent support 14 by, for example, the known CVD method, PVD method or the like as described above. As a result, an X-ray exposure mask 12 as shown in FIG. 1 is obtained.
尚、上記窒素イオン28の加速エネルギーは、その照射に
よって膜、即ちＸ線透過性支持体14の内部にダメージ
（欠陥部）が発生したりスパッタ作用によってその表面
が荒れたりするのを極力少なくする観点から、10KeV程
度以下の低エネルギー、より好ましくは数百eV程度以下
にするのが良く、またその下限は特にないが、イオン源
26から窒素イオン28を引き出せる限度から、現実的には
10eV程度になる。The acceleration energy of the nitrogen ions 28 minimizes damage (defects) inside the film, that is, the inside of the X-ray transparent support 14 due to the irradiation, and roughening of the surface due to the sputtering action. From the viewpoint, low energy of about 10 KeV or less, more preferably about several hundred eV or less, and the lower limit is not particularly limited.
From the limit that can extract nitrogen ion 28 from 26, in reality
It will be about 10 eV.
また、マスク支持体２表面の垂線に対する窒素イオン28
の入射角θは、それによる蒸着ホウ素20のスパッタ防止
等の観点から、０°〜60°程度の範囲内にするのが好ま
しい。In addition, nitrogen ions 28 with respect to the vertical line on the surface of the mask support 2
The incident angle θ of is preferably in the range of about 0 ° to 60 ° from the viewpoint of preventing spattering of the deposited boron 20.
また、処理の際のマスク支持体２の温度は、室温程度で
も良いし、熱励起による反応促進のためや窒素イオン28
の照射に伴って膜中に発生する欠陥部除去等のために、
必要に応じて数百℃程度に加熱しても良い。Further, the temperature of the mask support 2 during the treatment may be about room temperature, or it may be used to accelerate the reaction by thermal excitation or nitrogen ion 28
To remove defects that occur in the film due to irradiation with
You may heat to about several hundred degree C as needed.
上記のような方法の特徴を列挙すれば次の通りである。The features of the above method are listed below.
従来のPVD法、CVD法では、窒化ホウ素膜を形成する
ことができてもその中に立方晶窒化ホウ素が含まれてい
ないことが知られているが、上記方法によれば、立方晶
窒化ホウ素を含む高硬度かつ高熱伝導率の窒化ホウ素系
膜をＸ線透過性支持体14として形成することができる。It is known that the conventional PVD method and the CVD method do not contain cubic boron nitride even if the boron nitride film can be formed. It is possible to form a boron nitride-based film having a high hardness and a high thermal conductivity containing X as the X-ray transparent support 14.
熱励起を主体としていないため、低温処理が可能で
あり、その結果マスク支持体２として使用できる材質の
範囲が大幅に広がる。Since thermal excitation is not the main constituent, low temperature processing is possible, and as a result, the range of materials that can be used as the mask support 2 is greatly expanded.
加速された窒素イオン28の照射を併用するため、イ
オンの押込み（ノックオン）作用によってマスク支持体
２とＸ線透過性支持体14との界面付近に両者の構成物質
から成る混合層（ミキシング層）を形成することがで
き、これが言わば楔のような作用をするので、マスク支
持体２に対する密着性の良いＸ線透過性支持体14が得ら
れる。Since the accelerated irradiation of nitrogen ions 28 is used in combination, a mixed layer (mixing layer) composed of both constituent materials near the interface between the mask support 2 and the X-ray transmissive support 14 by the ion pushing (knock-on) action. Since it acts like a wedge, it is possible to obtain the X-ray transparent support 14 having good adhesion to the mask support 2.
ホウ素20の蒸着と窒素イオン28の照射の個々の処理
条件の調整が可能であるため、膜形成時の組成比B/Nに
対する制御性が良く、従ってＸ線透過性支持体14の結晶
配向等の膜室の制御をある程度自由に行うことができ
る。Since it is possible to adjust the individual processing conditions of the vapor deposition of boron 20 and the irradiation of nitrogen ions 28, the controllability for the composition ratio B / N at the time of film formation is good, and therefore the crystal orientation of the X-ray transparent support 14 etc. The membrane chamber can be controlled to some extent freely.
この例のように低エネルギーの窒素イオン28を用い
れば、表面が非常に平滑でしかも内部に欠陥部の少ない
良質のＸ線透過性支持体14を得ることができる。If low-energy nitrogen ions 28 are used as in this example, a good quality X-ray transparent support 14 having a very smooth surface and few defects inside can be obtained.
以上のようにこの発明に係るＸ線露光用マスクによれ
ば、Ｘ線透過性支持体が立方晶窒化ホウ素を含む窒化ホ
ウ素系膜から成っていて高硬度かつ高熱伝導率であるた
め、Ｘ線照射時の当該Ｘ線透過性支持体の温度上昇やそ
れに伴う変形を抑えることができる。その結果、当該Ｘ
線透過性支持体上のＸ線吸収体の変形も抑えられ、正確
なパターン転写が可能となる。As described above, according to the X-ray exposure mask of the present invention, the X-ray transparent support is made of a boron nitride-based film containing cubic boron nitride and has high hardness and high thermal conductivity. It is possible to suppress the temperature rise of the X-ray transparent support during irradiation and the accompanying deformation. As a result, the X
Deformation of the X-ray absorber on the radiation transparent support is also suppressed, and accurate pattern transfer is possible.
またこの発明に係る製造方法によれば、従来の方法では
得られなかった立方晶窒化ホウ素を含む窒化ホウ素系膜
を、Ｘ線透過支持体としてマスク支持体上に密着性良く
形成することができる。しかも低温処理が可能であるた
め、マスク支持体として使用できる材質の範囲が大幅に
広がる。Further, according to the manufacturing method of the present invention, a boron nitride-based film containing cubic boron nitride, which cannot be obtained by a conventional method, can be formed as an X-ray transparent support on a mask support with good adhesion. . Moreover, since low-temperature treatment is possible, the range of materials that can be used as the mask support is greatly expanded.
第１図は、この発明に係るＸ線露光用マスクを示す概略
断面図である。第２図は、この発明に係る製造方法を実
施する装置の一例を示す概略図である。第３図は、Ｘ線
露光用マスクの製造工程の一例を示す図である。 ２……マスク支持体、６……Ｘ線吸収体、12……実施例
に係るＸ線露光用マスク、14……Ｘ線透過性支持体、16
……蒸発源、20……ホウ素、26……イオン源、28……窒
素イオン。FIG. 1 is a schematic sectional view showing an X-ray exposure mask according to the present invention. FIG. 2 is a schematic view showing an example of an apparatus for carrying out the manufacturing method according to the present invention. FIG. 3 is a diagram showing an example of a manufacturing process of an X-ray exposure mask. 2 ... Mask support, 6 ... X-ray absorber, 12 ... X-ray exposure mask according to the embodiment, 14 ... X-ray transmissive support, 16
… Evaporation source, 20 …… Boron, 26 …… Ion source, 28 …… Nitrogen ion.
Claims (2)
支持体と、それを支持するマスク支持体とを有するＸ線
露光用マスクにおいて、前記Ｘ線透過性支持体が、立方
晶窒化ホウ素を含む窒化ホウ素系膜から成ることを特徴
とするＸ線露光用マスク。1. An X-ray exposure mask having an X-ray absorber, an X-ray transmissive support that supports the X-ray absorber, and a mask support that supports the X-ray transmissive support, wherein the X-ray transmissive support is a cube. An X-ray exposure mask comprising a boron nitride-based film containing crystalline boron nitride.
支持体と、それを支持するマスク支持体とを有するＸ線
露光用マスクを製造する方法において、前記Ｘ線透過性
支持体を、真空中でマスク支持体に対して、ホウ素の蒸
着と加速された窒素イオンの照射とを行うことによって
形成することを特徴とするＸ線露光用マスクの製造方
法。2. A method for producing an X-ray exposure mask having an X-ray absorber, an X-ray transparent support that supports the X-ray absorber, and a mask support that supports the X-ray transparent support. A method for manufacturing an X-ray exposure mask, comprising forming a body by subjecting a mask support to vacuum deposition of boron and irradiation of accelerated nitrogen ions in a vacuum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8958587A JPH0744140B2 (en) | 1987-04-10 | 1987-04-10 | X-ray exposure mask and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8958587A JPH0744140B2 (en) | 1987-04-10 | 1987-04-10 | X-ray exposure mask and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63254726A JPS63254726A (en) | 1988-10-21 |
| JPH0744140B2 true JPH0744140B2 (en) | 1995-05-15 |
Family
ID=13974860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8958587A Expired - Lifetime JPH0744140B2 (en) | 1987-04-10 | 1987-04-10 | X-ray exposure mask and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0744140B2 (en) |
-
1987
- 1987-04-10 JP JP8958587A patent/JPH0744140B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63254726A (en) | 1988-10-21 |
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