JPH0745714B2 - Thin film forming equipment - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus for forming a thin film on a substrate, and in particular, a thin film forming apparatus with an improved mechanism for feedback controlling the output of a vapor deposition source or a sputtering source. Involved in the device.

[Prior Art] Conventionally, as a thin film forming apparatus having a function of controlling the chemical composition of a thin film formed on a standard, thin film forming particles from each vapor deposition source or sputtering source installed in a vacuum chamber A structure having a detector for detecting the amount and means for controlling the output of each of the vapor deposition sources or the sputter sources based on the value detected by the detector is known.

[Problems to be Solved by the Invention] In the above-described thin film forming apparatus, the chemical composition of the thin film formed on the substrate is indirectly controlled by using the amount of thin film forming particles from each evaporation source or sputtering source as a control index. It is a thing. However, the chemical composition of the thin film formed on the substrate changes depending on the probability of the thin film forming particles forming on the substrate, the influence of the alloy reaction and the chemical reaction. The composition cannot be controlled with high precision.

The present invention has been made to solve the above-mentioned conventional problems, and at the same time as forming a thin film on a substrate placed in a vacuum chamber, directly detects the chemical composition of the formed thin film, It is intended to provide a thin film forming apparatus capable of forming a thin film having a target chemical composition with high accuracy by feedback controlling the output of each evaporation source or sputtering source based on the above.

[Means for Solving the Problems] In the first invention of the present application, at least one vapor deposition source or sputtering source is installed in a vacuum chamber, and a desired thin film is formed on a substrate arranged in the chamber. In a thin film forming apparatus, an X-ray source attached to the vacuum chamber, for making X-rays for exciting fluorescent X-rays incident on the thin film formed on the substrate at an angle of 10 ° or less with respect to the substrate surface. And a detector for detecting fluorescent X-rays emitted when the substrate surface irradiated with the X-rays from the X-ray source is excited, and the detection value by this detector is compared with a preset reference value. And a control means for feedback-controlling the output of at least one of the evaporation source or the sputtering source based on the above.

The incident angle of X-rays from the X-ray source with respect to the substrate surface is 10
The reason for limiting the angle to less than 0 ° is that if the incident angle exceeds 10 °, the chemical composition of the thin film surface layer immediately after film formation on the substrate cannot be detected with high sensitivity.

The second invention of the present application compares the detector for detecting the film formation rate in the structure of the first invention with a reference value set in advance, and based on this, the output of the vapor deposition source or the sputtering source. A thin film forming apparatus having a structure in which a means for adjusting an output control system of a feedback controlling means is added.

A third invention of the present application is a detector which is attached to the vacuum chamber according to the first and second inventions, and detects a diffracted X-ray intensity from a thin film formed on a substrate, and a detector of the detector. It is a thin film forming apparatus having a structure in which a value is compared with a preset reference value, and means for increasing or decreasing the fluorescent X-ray reference value of the control means is added based on this.

In a fourth invention of the present application, X-rays for exciting fluorescent X-rays are made incident on the substrate surface of the thin film formed by depositing the X-ray source used in the first to third inventions on the substrate. The thin film forming apparatus is arranged such that the angle at which it is made is equal to or less than the critical angle of total reflection of X-rays.

In the first to fourth inventions of the present application, a window such as a beryllium window that transmits X-rays may be provided on the upper side wall of the vacuum chamber, and the X-ray source and the detector may be arranged outside the window.

[Operation] According to the first invention of the present application, X is formed on the thin film formed on the substrate.
X-ray source for irradiating X-rays to excite fluorescent X-rays and a detector for detecting the excited fluorescent X-rays directly and simultaneously detect the chemical composition of the thin film formed on the substrate during the film formation process. it can. At this time, the X-ray source emits X
Since the vacuum chamber is attached so that the rays are incident on the substrate surface at an angle of 10 ° or less, more fluorescent X-rays that correlate with the chemical composition of the thin film formed on the substrate surface can be emitted, Characteristic X correlated with the chemical composition of the thin film by the detector
Line detection sensitivity can be significantly improved. Then, the detected value is compared with a reference value set in advance by the control means, and the output of the evaporation source or the sputter source installed in the vacuum chamber is feedback-controlled based on this, thereby forming a thin film having a target chemical composition. The film can be formed on the substrate with high accuracy.

Further, the X-ray source is attached to the vacuum chamber so that the X-rays emitted from the X-ray source are incident on the surface of the substrate at an angle of 10 ° or less. It is possible to prevent the radiation source from being contaminated by the thin film forming particles from the evaporation source or the sputter source, or blocking the thin film forming particles to hinder the deposition of the thin film on the substrate.

According to the second invention of the present application, a detector for detecting the film formation rate in the configuration of the first invention is compared with a reference value set in advance, and based on this, the deposition source or the sputtering source is detected. By adding a means for adjusting the output control system of the control means for feedback control of the output, a thin film can be formed on the substrate at a constant rate, which in turn has the target chemical composition and uniform crystallinity and shape. A thin film with excellent film quality can be formed.

According to the third invention of the present application, a detector provided in the vacuum chamber according to the first and second inventions for detecting the intensity of the diffracted X-rays from the thin film formed on the substrate, and this detector Detection values (for example, detection values such as a diffraction X-ray intensity ratio obtained from two detectors and a peak position that is the maximum value of detected diffraction X-rays) are compared with a preset reference value, and control is performed based on this. By adding means for increasing / decreasing the reference value of the fluorescent X-ray of the means, the thin film formed on the substrate has a change in crystal structure (for example, from amorphous to crystalline) due to a slight change in their composition ratio. Change or fluctuation of the lattice constant), the reference value of the fluorescent X-ray in the control means can be increased or decreased, so that the target chemical composition can be controlled with high accuracy and a thin film having a predetermined crystal structure can be formed. Can form a film. That is, when the crystal structure of the thin film formed on the substrate changes due to a slight change in their composition ratio, it is considered that the correction is performed by adjusting the output control system of the control means at the final stage. However, in such a control method, three pieces of information, that is, the control information of the chemical composition, the control information of the film formation rate, and the control information of the crystal structure, etc. are input to the control output system of the control means. ) Occurs and control becomes virtually impossible. From such a thing,
As described above, by adding a means for increasing / decreasing the reference value of the fluorescent X-ray in the control means, the target chemical composition can be controlled with high accuracy, and a thin film having a predetermined amorphous structure,
A thin film having a predetermined lattice constant or a thin film having a predetermined crystal plane can be formed.

According to the fourth invention of the present application, X-rays for exciting the fluorescent X-rays to the thin film formed on the substrate by the X-ray source used in the first to third inventions are applied to the surface of the substrate. By arranging so that the angle at which the X-ray is incident is less than or equal to the critical angle of the total reflection of X-rays, the X-rays incident on the thin film formed on the substrate are totally reflected, so that from the surface of the thin film to the inside. It is possible to improve the detection sensitivity of fluorescent X-rays of the atoms forming the thin film without the X-rays entering.

Further, in the first to fourth aspects of the present invention, since the X-ray has a relatively large penetrating power, the thin film can be formed without being restricted by the thin film forming pressure in the chamber. Further, according to the configuration in which the window for transmitting X-rays is provided on the side wall of the vacuum chamber, the X-ray source and the detector can be arranged outside the window, that is, in the atmosphere, so that the incident position on the thin film and the angle can be adjusted. The operation can be easily performed.

Embodiments of the Invention Embodiments of the present invention will be described in detail below with reference to the drawings. However, in FIGS. 2 to 4 referred to in Examples 2 to 4, the same members as those in FIG. 1 are denoted by the same reference numerals and the description thereof will be omitted.

Embodiment 1 FIG. 1 is a schematic view showing a thin film forming apparatus in Embodiment 1 of the present invention, in which 1 is a vacuum chamber. At the bottom of the vacuum chamber 1, an exhaust pipe (not shown) communicating with a vacuum pump for maintaining a predetermined degree of vacuum in the chamber 1 is provided. Near the bottom of the vacuum chamber 1, for example, two evaporation sources 2a and 2b are arranged. These evaporation sources 2a and 2b are composed of crucibles 3a and 3b, and EB guns 4a and 4b for irradiating a predetermined metal contained in the crucibles 3a and 3b with an electron beam for evaporation. A substrate holder 5 for holding a substrate is arranged near the upper part of the vacuum chamber 1. An X-ray source 6 for irradiating a thin film formed on the substrate with X-rays (for example, white X-rays) to excite fluorescent X-rays is provided on an upper side wall of the vacuum chamber 1. . This X
The angle of the emitted X-rays with respect to the substrate surface is X in the radiation source 6.
The line is arranged so as to have a critical angle at which it is totally reflected when the line is incident on the substrate surface. Further, on the upper side wall of the vacuum chamber 1, there is provided a fluorescence detector 7 composed of a solid-state element for detecting the fluorescent X-rays excited by the irradiation of the X-rays. The angle of the detector 7 is set so that it has a critical angle with which the fluorescent X-rays are totally reflected with respect to the surface of the substrate.

The detector 7 is connected to a first amplifier 8. The first amplifier 8 is connected to the wave height analyzers 9a and 9b which are set in advance so as to detect only predetermined fluorescent X-rays. The wave height analyzers 9a and 9b are connected to the first comparators 10a and 10b, respectively. To these comparators 10a and 10b, count rate setters 11a and 11b are connected, respectively, and the count rates set in advance from the setters 11a and 11b to the comparators 10a and 10b are set to correspond to predetermined chemical compositions. The reference value signal is output. The first comparators 10a and 10b are respectively connected to second amplifiers 12a and 12b, and the amplifiers 12a and 12b are respectively connected to evaporation source output controllers 13a and 13b as an output control system. These evaporation source output controllers 13a and 13b are connected to the EB guns 4a and 4b of the evaporation sources 2a and 2b in the vacuum chamber 1, respectively.
A feedback control signal is output from a and 13b to each EB gun 4a and 4b. Such a first amplifier 8,
Wave height analyzers 9a, 9b, first comparators 10a, 10b, count rate setting device
11a, 12b, second amplifiers 12a, 12b and evaporation source output controller 13
The a and 13b constitute a control means for feedback controlling the outputs of the EB guns 4a and 4b of the evaporation sources 2a and 2b. It should be noted that each of the evaporation source output controllers 13a and 13b includes an evaporation source output controller 14 for manually adjusting an absolute output when the outputs of the EB guns 4a and 4b are feedback-controlled by the controllers 13a and 13b. Are connected.

Next, thin film formation by the thin film forming apparatus of the first embodiment will be described.

First, the substrate holder 5 is caused to hold a predetermined substrate 15, and the evaporation source
After accommodating two kinds of metals 16a and 16b as composition components of a thin film to be formed in crucibles 3a and 3b of 2a and 2b, a vacuum pump is operated to exhaust gas in the chamber 1 (not shown). ), The inside of the chamber 1 is maintained at a predetermined vacuum degree. Then, each EB is output by the signal from each evaporation source output controller 13a, 13b.
The guns 4a and 4b are actuated to irradiate the metal beams 16a and 16b in the crucibles 3a and 3b with an electron beam to melt and vaporize them, and a thin film is formed on the surface of the substrate 15 by these vaporized beams (thin film forming particles). .

In the film forming process described above, the X-ray source 6 is a monochromatic X-ray source, and white X-rays are incident on the surface of the thin film at a critical angle at which the X-rays are totally reflected. At this time, the resurface layer of the thin film formed on the surface of the substrate 15 is efficiently irradiated with X-rays, and fluorescent X-rays that correlate with the chemical composition of the outermost layer are excited and emitted. The fluorescent X-rays thus emitted are detected by the fluorescent X-ray detector 7 provided in the chamber 1. After detection by the detector 7, the first amplifier 8
Fluorescence X of the metals 16a and 16b in the crucibles 3a and 3b which are amplified by the two wave height analyzers 9a and 9b and which are composition components of the thin film.
Only the lines are analyzed, and their count rates are determined by the first comparators 10a and 10b.
Output to. In these comparators 10a and 10b, the count rate signals from the wave height analyzers 9a and 9b are compared with the count rate setters 11a and 1b, respectively.
1b is compared with a preset count rate reference value, these deviation outputs are amplified by the second amplifiers 12a, 12b, and the evaporation source 2a is controlled by the evaporation source output controllers 13a, 13b based on the output signal. , 2b EB guns 4a and 4b outputs are feedback-controlled. Therefore, by a series of feedback control by the control means in the film forming process, an alloy thin film in which the two kinds of metals housed in the crucibles 3a and 3b are accurately alloyed with a desired composition ratio can be formed on the surface of the substrate 15. . The speed in the film forming process outputs a control signal from the evaporation source output controller 14 to the evaporation source output controllers 13a and 13b, and based on this, outputs the outputs of the EB guns 4a and 4b of the evaporation sources 2a and 2b. It was performed by feedback control.

Second Embodiment FIG. 2 is a schematic diagram showing a thin film forming apparatus of the second embodiment. Reference numeral 17 in the figure denotes a film formation rate detector, which is disposed above the vacuum chamber 1 and includes, for example, a quartz film thickness meter. This detector 17 is connected to a third amplifier 18, which in turn is connected to a second comparator 19. A film forming speed setting device 20 is connected to the comparator 19, and the setting device 20 is connected to the comparator.
The signal of the film-forming speed reference value preset in 19 is output.
The second comparator 19 is connected to a fourth amplifier 21, and the amplifier 21 is an evaporation source output controller 13a, 1 as an output control system.
Connected to 3b respectively.

According to the second embodiment having such a configuration, in the film forming process of the above-described first embodiment, the crucibles 3a and 3b of the evaporation sources 2a and 2b are formed.
Evaporation beam (thin film forming particles) from the film forming speed detector 17
The film is formed on the lower surface, the film forming speed is detected, amplified by the third amplifier 18, and then output to the second comparator 19. In the comparator 19, the signal from the amplifier 18 is compared with the preset film-forming speed reference value from the film-forming speed setting device 20, and after the deviation output of these is amplified by the fourth amplifier 21, Based on the output signal, the evaporation source output controller 13a, 13b of the evaporation source 2a, 2b
The maximum output of the EB guns 4a and 4b is feedback-controlled at the same ratio. Therefore, the evaporation source output controller 13a, based on the output signal after being amplified by the second amplifiers 12a and 12b and the output signal after being amplified by the fourth amplifier 21 in the control means in the first embodiment in the film forming process. EB gun of evaporation sources 2a and 2b by 13b
By feedback controlling the outputs of 4a and 4b,
It is possible to form on the surface of the substrate 15 an alloy thin film that is accurately alloyed with the composition ratio intended for the two kinds of metals housed in the crucibles 3a and 3b, and the film forming accuracy can be made constant, and the film quality and purity can be improved. A good alloy thin film can be formed.

Third Embodiment FIG. 3 is a schematic diagram showing a thin film forming apparatus of the third embodiment. 6'in the figure is an X-ray source that emits monochromatic X-rays. This X-ray source 6'is similar to the X-ray source 6 of the first embodiment in that the angle of the emitted X-rays with respect to the substrate surface is X-rays. It is arranged so as to have a critical angle at which it is totally reflected upon incidence on the substrate surface. Reference numeral 22 in the figure denotes an X-ray extraction window provided on the side wall of the vacuum chamber 1, and the window 22 is made of, for example, beryllium having high X-ray transparency. Outside this window 22,
Two diffracted X-ray detectors 23a and 23b are provided for detecting the intensity of the diffracted X-ray transmitted through the window 22. These detectors 23a and 23b are connected to fifth amplifiers 24a and 24b, respectively, and these amplifiers 24a and 24b are connected to a divider 25. The divider 25 calculates the ratio of the diffracted X-ray intensity signals from the amplifiers 24a and 24b, and outputs a control signal to the count setting devices 11a and 11b based on the ratio.

According to the third embodiment having such a configuration, in the film formation process described in the first embodiment, the monochromatic X-ray is emitted from the X-ray source 6 '.
When a ray is incident on the surface of the thin film at a critical angle at which the X-ray is totally reflected, a fluorescent X-ray that correlates with the chemical composition of the outermost layer of the thin film formed on the surface of the substrate 15 is excited and emitted, and the diffracted X-ray is emitted. Is released. The diffracted X-rays pass through the X-ray extraction window 22 provided on the side wall of the chamber 1 and are detected by the diffracted X-ray detectors 23a and 23b.
It is output to the divider 25 after being amplified by 24a and 24b. In this divider 25, the ratio of the two amplified diffracted X-ray intensity signals is obtained, and based on this, the count rate setting devices 11a and 11b are obtained.
The reference value of the count rate of is corrected. For example, when an amorphous alloy thin film is to be formed on the surface of the substrate 15, diffraction does not occur when the thin film surface is irradiated with monochromatic X-rays and a halo pattern peculiar to the amorphous appears, so that the divider The ratio of the diffracted X-ray intensities obtained in 25 is a value close to 1. on the other hand,
When the crystallization progresses, if the diffracted X-rays 23a and 23b are arranged at the positions corresponding to the direction in which the diffraction occurs by the irradiation of the monochromatic X-rays and the position in which the diffraction does not occur, the divider 25 The obtained ratio of the diffracted X-ray intensities has a value larger than 1 or a small value. Therefore, when the ratio deviates from 1 by exceeding the predetermined deviation range in the divider 25, the count rate reference value of the count rate setters 11a and 11b from the divider 25 becomes an amorphous structure of the thin film. Increase or decrease so that. The corrected count rate reference values from the count rate setters 11a and 11b are output to the first comparators 10a and 10b, and the count rate signals from the wave height analyzers 9a and 9b described in the first embodiment are described. To the same comparators 10a and 10b. In each of the comparators 10a and 10b, the count rate signals are compared with the corrected count rate reference value, and these deviation outputs are amplified by the second amplifiers 12a and 12b. After that, based on the output signal, the evaporation source output controller 13
The outputs of the EB guns 4a and 4b of the evaporation sources 2a and 2b are feedback-controlled by a and 13b. Therefore, the two kinds of metals housed in the crucibles 3a and 3b are intended by a series of feedback control by the control means configured to correct the count rate reference value of the count rate setters 11a and 11b by the divider 25. An alloy thin film which is accurately alloyed at the composition ratio and has a predetermined crystal structure (for example, amorphous structure) can be formed on the surface of the substrate 15.

Fourth Embodiment FIG. 4 is a schematic diagram showing a thin film forming apparatus of the fourth embodiment. 6'in the figure is an X-ray source that emits monochromatic X-rays. This X-ray source 6'is similar to the X-ray source 6 of the first embodiment in that the angle of the emitted X-rays with respect to the substrate surface is X-rays. It is arranged so as to have a critical angle at which it is totally reflected upon incidence on the substrate surface. Reference numeral 22 in the figure denotes a beryllium window provided on the upper side wall of the vacuum chamber 1. Outside this window 22, the window
A position-sensitive X-ray detector 26 for detecting the intensity of the diffracted X-ray transmitted through 22 is provided. The detector 26 is arranged so that the X-ray diffraction angle corresponding to a crystal plane of a thin film and the X-ray diffraction intensity around it can be measured at one time. The detector 26 is connected to a sixth amplifier 27 and
Is connected to the peak position detector 28. This detector 28
Is connected to the third comparator 29. A peak position setting device 30 is connected to this comparator 29, and a peak position reference value set in advance from the setting device 30 to the comparator 29 so as to correspond to a crystal plane of a crystal having a predetermined lattice constant. The signal is output. The third comparator 29 includes count setting devices 11a and 11b.
Connected to each.

According to the fourth embodiment having such a configuration, in the film forming process described in the first embodiment, the monochromatic X-ray is emitted from the X-ray source 6 '.
When a ray is incident on the surface of the thin film at a critical angle at which the X-rays are totally reflected, fluorescent X-rays that correlate with the chemical composition of the outermost layer of the thin film formed on the surface of the substrate 15 are excited and emitted, and the crystal of the thin film is also emitted. Diffracted X-rays corresponding to the surface are emitted. The diffracted X-rays pass through the beryllium window 22 provided on the upper side wall of the chamber 1 and are detected by the position-sensitive X-ray detector 26, and are detected as a signal corresponding to the X-ray diffraction angle and the X-ray diffraction intensity around it. 6 amplifier
After being amplified at 27, it is output to the peak position detector 28. The peak position detector 28 detects the diffraction peak position corresponding to the diffraction angle, and the detection signal is output to the third comparator 29. In this comparator 29, the diffraction peak position from the detector 28 and the preset peak position reference value from the peak position setting device 30 are compared, and based on this, the counting rate reference of the counting setting device 11a, 11b. The value is corrected. For example,
When a polycrystalline alloy thin film is to be formed on the surface of the substrate 15, the crystal lattice constant of the alloy thin film changes according to a slight composition change. Therefore, in the third comparator 29, the detector 28
From the position of the diffraction peak corresponding to the crystal plane of the crystal having a preset lattice constant from the peak position setting device 30 (peak position reference value),
Based on this, the count rate reference value of the count rate setters 11a and 11b is increased or decreased so that the thin film has a polycrystalline structure having a predetermined lattice constant. The corrected count rate reference values from the count rate setters 11a and 11b are output to the first comparators 10a and 10b, and the count rate signals from the wave height analyzers 9a and 9b described in the first embodiment are described. To the comparators 10a and 10b,
In a and 10b, the count rate signals are compared with the corrected count rate reference value, and these deviation outputs are output to the second amplifier 12
After amplification by a and 12b, the outputs of the EB guns 4a and 4b of the evaporation sources 2a and 2b are feedback-controlled by the evaporation source output controllers 13a and 13b based on the output signals. Therefore, the counting rate setting device
By the series of feedback control by the control means configured such that the count rate reference values of 11a and 11b are corrected by the third comparator 29, the two metal contained in the crucibles 3a and 3b have the desired composition ratio. A polycrystalline alloy thin film which is accurately alloyed and has a predetermined lattice constant can be formed on the surface of the substrate 15.

In addition, in each of the above-described first to fourth embodiments, two evaporation sources are provided in the vacuum chamber, but the present invention is not limited to this.
One or three or more units may be provided. Further, instead of the evaporation source, at least one sputtering source may be arranged in the vacuum chamber. Particularly, in a thin film forming apparatus having a structure in which one evaporation source or a sputtering source is arranged in a vacuum chamber, a reactive gas is supplied into the vacuum chamber to form a compound thin film with a metal on a substrate. By feedback-controlling the output of the evaporation source or the sputtering source by the control means, a compound thin film whose target chemical composition is accurately controlled can be formed on the substrate.

[Effect of the Invention] As described in detail above, according to the first invention of the present application, it is possible to provide a thin film forming apparatus capable of forming a thin film having a target chemical composition on a substrate arranged in a vacuum chamber with high accuracy. Also,
According to the second invention of the present application, a thin film having a target chemical composition can be formed on a substrate placed in a vacuum chamber with high accuracy, the film forming rate can be made constant, and a thin film having good film quality and purity can be obtained. It is possible to provide a thin film forming apparatus capable of forming a film. Further, according to the third invention of the present application, a thin film having a target chemical composition and a predetermined crystal structure (eg, crystallinity or lattice constant) is formed on a substrate arranged in a vacuum chamber with high accuracy. In addition, it is possible to provide a thin film forming apparatus capable of forming a thin film having a good film quality and good purity by making the film forming rate constant. Furthermore, according to the fourth invention of the present application, the detection sensitivity of the fluorescent X-rays of the atoms constituting the thin film can be improved.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a thin film forming apparatus of Example 1 of the present invention, FIG. 2 is a schematic diagram showing a thin film forming apparatus of Example 2 of the present invention, and FIG. 3 is a thin film of Example 3 of the present invention. FIG. 4 is a schematic view showing a film forming apparatus, and FIG. 4 is a schematic view showing a thin film forming apparatus of Example 4 of the present invention. 1 ... Vacuum chamber, 2a, 2b ... Evaporation source, 6, 6 '...
X-ray source, 7 ... Fluorescent X-ray detector, 10a, 10b, 19, 29 ...
Comparator, 11a, 11b ... Count rate setting device, 13a, 13b ... Evaporation source output controller, 15 ... Substrate, 17 ... Deposition rate detector, 20
…… Deposition rate setting device, 22 …… X-ray extraction window, 23a, 23b…
… Diffraction X-ray detector, 25 …… divider, 26 …… Position-sensitive X-ray detector, 28 …… Peak position detector, 30 …… Peak position setter.

Front page continued (72) Inventor Hiroyuki Tokushige 1-7-2 Nishishimbashi, Minato-ku, Tokyo Toranomon Takagi Building 2nd floor, Rhymes Co., Ltd. (72) Inventor Taiichi Mori 1-7-2 Nishishimbashi, Minato-ku, Tokyo Toranomon Takagi Building, 2nd floor, Limes, Inc. (72) Inventor, Ao Miyagawa, 1-7-2, Nishishinbashi, Minato-ku, Tokyo Toranomon Takagi Building, 2nd floor, Limes, Inc. (56) Reference JP-A-1-208465 (JP, A)

Claims (4)

[Claims] 1. A thin film forming apparatus for forming a desired thin film on a substrate placed in a vacuum chamber, wherein at least one vapor deposition source or sputtering source is installed in the vacuum chamber.
An X-ray source attached to the vacuum chamber, which makes X-rays for exciting fluorescent X-rays incident on the thin film formed on the substrate at an angle of 10 ° or less with respect to the substrate surface, and the X-ray source. A detector for detecting fluorescent X-rays emitted by exciting the substrate surface irradiated with X-rays from a source and a detection value by this detector are compared with a preset reference value, and based on this, the evaporation is performed. And a control means for feedback-controlling the output of at least one of the evaporation source or the sputtering source. 2. A detector for detecting a film forming speed and an output control system of a control means for comparing the detected value with a preset reference value and feedback-controlling the output of the vapor deposition source or the sputter source based on the reference value. 2. The thin film forming apparatus according to claim 1, further comprising: an adjusting unit. 3. A detector provided in a vacuum chamber for detecting the intensity of diffracted X-rays from a thin film formed on a substrate, and a detection value of this detector is compared with a preset reference value. 3. The thin film forming apparatus according to claim 1, further comprising: a means for increasing or decreasing a reference value of the fluorescent X-ray of the control means based on the control means. 4. The X-ray source has a critical angle of total reflection of X-rays when an X-ray for exciting a fluorescent X-ray into a thin film formed on a substrate is incident on the surface of the substrate. The thin film forming apparatus according to claim 1, wherein the thin film forming apparatus is arranged as follows.