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JPH0746088B2 - Device for measuring silicon concentration in molten metal - Google Patents
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JPH0746088B2 - Device for measuring silicon concentration in molten metal - Google Patents

Device for measuring silicon concentration in molten metal

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Publication number
JPH0746088B2
JPH0746088B2 JP62023353A JP2335387A JPH0746088B2 JP H0746088 B2 JPH0746088 B2 JP H0746088B2 JP 62023353 A JP62023353 A JP 62023353A JP 2335387 A JP2335387 A JP 2335387A JP H0746088 B2 JPH0746088 B2 JP H0746088B2
Authority
JP
Japan
Prior art keywords
silicon
molten metal
sensor element
molten iron
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62023353A
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Japanese (ja)
Other versions
JPS63191056A (en
Inventor
憲一 五明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAWASO ELECTRIC INDUSTRIAL KABUSHIKI KAISHA
Original Assignee
KAWASO ELECTRIC INDUSTRIAL KABUSHIKI KAISHA
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Application filed by KAWASO ELECTRIC INDUSTRIAL KABUSHIKI KAISHA filed Critical KAWASO ELECTRIC INDUSTRIAL KABUSHIKI KAISHA
Priority to JP62023353A priority Critical patent/JPH0746088B2/en
Publication of JPS63191056A publication Critical patent/JPS63191056A/en
Publication of JPH0746088B2 publication Critical patent/JPH0746088B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/406Cells and probes with solid electrolytes
    • G01N27/411Cells and probes with solid electrolytes for investigating or analysing of liquid metals
    • G01N27/4112Composition or fabrication of the solid electrolyte
    • G01N27/4114Composition or fabrication of the solid electrolyte for detection of gases other than oxygen

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Measuring Oxygen Concentration In Cells (AREA)
  • Investigating And Analyzing Materials By Characteristic Methods (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は,溶融金属,特に溶銑又は溶鋼等の溶鉄中のシ
リコン(Si)濃度を測定する装置に関する. 〔従来の技術〕 溶融金属中の不純物元素の測定方法及び装置について,
固体電解質による酸素濃淡電池の技術を応用したものが
特開昭61−142455号公報,特開昭61−260155号公報,特
開昭61−260156号公報,特開昭61−260157号公報等に開
示されている.これを図面に基づき説明すると,第21図
に示すように,溶鉄M中のシリコン濃度を測定する装置
において,シリコンセンサ素子1は,酸素イオン導電性
を有する固体電解質2により形成された筒体の内部に基
準電極3を有すると共に,該筒体の外表面にシリコン酸
化物及び/又はシリコン複合酸化物を斑点状等に被着し
た副電極4を有している.前記基準電極3は基準物質5
中に埋設されており,該基準物質5は基準となる酸素分
圧を規定するものであって,従来の酸素濃淡電池に用い
られているものと同様である.溶融金属極6は,前記シ
リコンセンサ素子1とは離隔して設けられ,溶融金属を
介してシリコンセンサ素子1との間に電位差測定回路を
形成する.このため溶融金属極6及び基準電極3は電位
差計7に接続されている.尚,8は測温素子である. 而して,この装置によれば,溶融金属M中にて測定すべ
きシリコンの活量が副電極4の表面上に一定値で安定し
た準化学平衡帯域として存在することになる.従って,
前記電位差計7に表れる電位差を測定することにより,
溶融金属中のシリコンの濃度を知ることができる. 〔発明が解決しようとする問題点〕 上記従来の測定装置によれば,溶融金属中のシリコン濃
度を迅速に検出することができる点で優れているが,検
出結果が正確でないという問題がある. この点について,本発明者は,溶融金属中のシリコン活
量が該金属中に含有される炭素量によって大きく変動を
受けることを知見し,この炭素量の大小がシリコン濃度
の検出を不正確ならしめている原因であることを発見し
た. また,上記測定装置は,溶鉄/副電極/固体電解質の三
相界面の酸素分圧を測定する原理を利用したものである
が,本発明者は,該測定装置により鍋内の溶融金属中の
シリコン濃度を測定する場合に比し,高炉溶銑樋のよう
に流動している溶融金属中のシリコン濃度を測定する場
合には,前記三相界面が更新されるため,平衡状態にな
りにくく,平衡到達時間が長くなると共に,検出結果が
極めて不安定となることを発見した. 而して,本発明は,これらの検出結果を不正確ならしめ
ている原因を除去する点に問題点を有し,後述する手段
により,その問題点を解決し得たものである. 〔問題点を解決するための手段〕 先ず,上述した測定装置に基づく測定原理を説明すると
共に,溶融金属中の炭素量がシリコン活量の変動に影響
する理由を説明する. 上記測定装置において,シリコンセンサ素子1を構成す
る固体電解質2をジルコニア固体電解質(酸素濃淡電
池)とし,該固体電解質2の表面に形成した副電極4を
SiO2又はSiO2とSiO2以外の酸化物との各種複合酸化物,
例えばZrO2+ZrSiO4からなる物質とした場合,このシリ
コンセンサ素子を溶鉄中に浸漬すると,副電極/ジルコ
ニア固体電解質/溶鉄の三相界面において,次式で示さ
れる平衡状態が生じる. Si(in Fe)+O2+ZrO2=ZrSiO4 …(1) (1)の平衡定数K1(T)は,次式の通り. ここで,aZrSiO4=1,aZrO2=1のとき,上記K1(T)
は, となる. ここで,K1(T)は温度のみの関数であり,熱力学的に
既知であるので,三相界面の酸素分圧をジルコニア固体
電解質によって測定すれば,溶鉄中のシリコン(Si)の
活量が測定出来る. ところで,溶鉄成分制御に必要な情報はシリコン(Si)
活量ではなく,シリコン(Si)量(重量%)であるの
で,次にこのようにして測定された溶鉄中のシリコン
(Si)活量を,シリコン(Si)量(重量%)に換算する
式を説明する. シリコンセンサの起電力とシリコン(Si)活量及び温度
の関係は次式の通りである. (4)式を変形して,h(Si)に関して整理すると次式の
通りである. 但し: h(Si);ヘンリー基準活量 K1(T);Si(in Fe)+O2+ZrO2=ZrSiO4 (1)式の平衡定数 log K1(T)=41900/T−10.99 Po2(ref);基準物質(Mo−MoO2)の平衡酸素分圧 Po2(ref)=exp(14.238−59049/T) Pθ;電子伝導パラメータ log Pθ=24.42−74370/T T;絶対温度 F;ファラデー定数 23052(cal・V-1・mol-1) R;ガス定数 1.98648(cal・deg-1・mol-1) 溶鉄中のヘンリー基準のシリコン活量h(Si)は次式に
より計算出来,センサによる測定結果からシリコン量
[%Si]を求めることが出来る. log h(Si)=▲eSi Si▼[%Si]+▲eC Si▼[%C] +log[Si] …(6) 但し: ▲eSi Si▼=0.109 ▲eC Si▼=0.198 従って,以上の測定原理から溶鉄中のシリコン(Si)の
濃度を測定することが出来る. ところで,溶鉄中のシリコン濃度を測定する場合,上述
の通り,固体電解質シリコンセンサにより測定されるも
のは溶鉄中のシリコン(Si)の活量であり,この活量は
溶鉄中に含有される炭素(C)量の変動の影響を大きく
受けるという問題がある.即ち,シリコン(Si)の濃度
が同じ場合でも,炭素(C)の量が変動すれば,それに
対応してシリコン活量値も変動し,シリコンセンサの起
電力(E.M.F.)も変化する. 溶鉄成分制御に必要な情報は,シリコン(Si)の活量で
はなく,シリコン(Si)の量(重量%)であるが,シリ
コンセンサにより検知し得るのはシリコン(Si)活量で
あるから,該活量をシリコンの量(重量%)に正確に変
換するためには,炭素(C)の量についての情報が必要
となる. ここで,シリコンセンサの起電力に対する炭素(C)量
の影響を説明する. シリコン活量,温度及び起電力の関係は,前掲(1)式
を変形し,炭素(C)変動分,即ちΔCにおける起電力
変化をΔEとすれば,次式で示される. log h(Si)=▲eSi Si▼[%Si]+▲eC Si▼[%C]+log
[%Si] log h′(Si)=▲eSi Si▼[%Si]+▲eC Si▼[%C
+ΔC] +log[%Si] …(9) (8)式−(7)式 ΔE=ln{k1(T)h′(Si)−1/4+Pθ1/4} −ln{k1(T)h(Si)−1/4+Pθ1/4} …(10) (10)式において Pθ1/4<<{K1(T)h(Si)}
−1/4であり,(10)式は次式のように簡略化すること
ができる. (11)式に F=23052(cal・V-1・mol-1) R=1.98648(cal・deg-1・mol-1) ▲eC Si▼=0.198 を代入すれば,セル起電力に及ぼす炭素(C)量の影響
は次式のように示すことが出来る. ΔE(mV)=9.824×10-3×T(K)×ΔC(%) …(12) 公知のセンサを用いて溶鉄中のシリコンを測定する場
合,溶鉄中の炭素(C)の量は飽和状態又は過飽和状態
にあるため,理論的には起電力に影響を生じないが,本
発明が実験したところによると,実際には操業条件等に
よる溶鉄中の炭素(C)量は少なからず変動し,一般的
にその変化幅は約1%程度認められ,これに伴うシリコ
ンセンサ起電力の変化は約17mVに達することが知見され
た.従って,従来のシリコンセンサでは,この起電力の
変化幅において測定誤差を容認しなければならないとい
う問題がある. 而して,本発明者は,溶鉄中のシリコン量を正確に把握
するためには,炭素量の変動の無い条件,又はシリコン
量の算定において炭素の変動量が影響を与えることのな
い条件が計測上必要となることに着目した.ところで,
炭素の飽和溶解度については,様々な研究がすすめられ
ているが,一般的に炭素の飽和溶解度は例えば次式によ
り表現される. %C=1.52+2.39×10-3×t(℃) これによれば,溶鉄温度が低ければ炭素飽和溶解度は低
くなり,逆に溶鉄温度が高ければ炭素飽和溶解度は高く
なる.従って,上述した溶鉄中の炭素量変動は溶鉄温度
の変化に起因している.そこで,本発明者は,溶鉄温度
の変化にかかわらず,溶鉄中の炭素を常に飽和状態に維
持することにより上記問題点を解決し得ることを知得し
た.このため,本発明は,シリコンセンサ素子近傍の溶
鉄に積極的に炭素を供給する手法を採用することによ
り,測定期間中常に炭素量を飽和状態に維持することを
特徴とする. また,公知のセンサを用いてシリコン濃度を測定するに
際し,高炉溶銑樋のように溶鉄が流動している場合,従
来のように裸のセンサ素子を直接溶鉄中に浸漬するもの
では,上述した溶鉄/副電極/固体電解質の三相界面が
更新されるため,三相界面が平衡状態になりにくく,平
衡到達時間が長くなると共に,指示が不安定になるとい
う問題がある. 而して,本発明者は,シリコンセンサ素子近傍の溶鉄が
測定期間中流動しないように溶鉄流の影響から遮断する
ことが有利であることを知得した.しかも,このように
シリコンセンサ素子近傍の溶鉄を流動しないようにする
ことにより,前述した炭素供給手段による炭素飽和状態
を維持することが容易となる.このため,本発明は,シ
リコンセンサ素子の周囲に侵入した溶鉄を滞留せしめる
室を形成することを特徴とする. そこで,本発明が上記特徴の手段として構成したところ
は,酸素イオン導電性を有する固体電解質の一例に基準
電極を有すると共に,該固体電解質の他側にシリコン酸
化物及び/又はシリコン複合酸化物からなる副電極を有
するシリコンセンサ素子と,溶融金属中にて前記シリコ
ンセンサ素子との間に電位差測定回路を形成する溶融金
属極とを備えたものにおいて:少なくとも前記シリコン
センサ素子の周囲に溶融金属滞留室を形成し且つ該滞留
室に溶融金属を侵入せしめる開口部を有する仕切体と,
前記溶融金属滞留室内に炭素を供給する手段とを備えて
なる点にある. 〔実 施 例〕 以下図面に基づいて本発明の実施例を詳述する. (第1実施例) 第1図及び第2図に示す第1実施例において,シリコン
濃度測定装置には,シリコンセンサ素子1と,溶鉄極
(溶融金属極)6と,測温素子8とが,ひとまとめに組
み込まれている.シリコンセンサ素子1は,第21図に基
づき上述した従来公知のものと同様であり,酸素イオン
導電性を有する固体電解質2により形成された有底筒状
の筒体の内部に基準電極(図示省略)を有し,該筒体の
外表面にシリコン酸化物を斑点状その他の任意の形態に
被着した副電極4を有している.尚,固体電解質2は図
示のような筒状の他,種々の形態に成形することが可能
であり,要するに該固体電解質2の一側に基準電極を有
すると共に,他側に副電極4を有し,溶鉄(溶銑,溶鋼
その他の溶融金属)中にて,溶鉄極6との間に該溶鉄を
介して電位差測定回路を形成するものであれば良い.ま
た,副電極4は,固体電解質2の表面に直接被着される
他,微小の間隙を有して該固体電解質2に支持されるも
のであっても良い. 前記シリコンセンサ素子1,溶鉄極6,測温素子8は,好ま
しくは,各基端部を,セラミック製等のヘッド9の先端
開口部に充填された耐火セメント10に埋設保持されてい
る.ヘッド9は,第1図鎖線に示すように,外表面に耐
火物を被着した紙管からなるホルダ11に挿着され,これ
によりプローブを構成する.尚,第2図において,12は
シリコンセンサ素子の基準電極リード線,13は溶鉄極リ
ード線,14は測温素子リード線であり,図例ではヘッド
9の基端部に挿出されているが,該ヘッド基端部にてコ
ネクタに接続され,該コネクタを介してホルダ11側のリ
ード線と結線されるようにするのが望ましい.尚,使用
時には,シリコンセンサ素子1のリード線12と溶鉄極6
のリード線13は,第21図に示した従来のセンサと同様の
電位差計に接続される. 而して,この第1実施例では,前記シリコンセンサ素子
1,溶鉄極6,測温素子8の三者がキャップ状の仕切体15に
包囲されており,該仕切体15の基端部は前記ヘッド9に
固定されている.仕切体15は,内部に溶鉄を侵入せしめ
るために,先端部に開口部16a,周壁部に開口部16bを開
設しており,これにより仕切体15により囲まれた溶融金
属滞留室17を形成している.この仕切体15は,溶鉄中に
浸漬したとき破損することがなく,溶鉄中でシリコン量
を測定している間(通常30〜120秒程度),溶失又は焼
失等により消失することなく形を保持しているものであ
ればその材質は問わない.然し,測定完了後は消失して
もかまわない.更に,前記溶融金属滞留室17内には,炭
素を供給する手段が設けられている.この炭素供給手段
は,好ましい実施例を後述するが,溶融金属滞留室17内
に滞留した溶鉄中の炭素を積極的に飽和状態ならしめる
ものであり,例えば,前記キャップ状仕切体15の材質を
それ自体が溶鉄の熱により炭素を溶出するものとするこ
とにより実施できる. (仕切体の実施例) 上記実施例では,キャップ状仕切体15によりシリコンセ
ンサ素子1,溶鉄極6,測温素子8の三者を包囲する構成を
示したが,その他に,第3図乃至第6図に示す実施例を
採用することが可能である. 第3図の実施例において,ヘッド9にはシリコンセンサ
素子1及び測温素子8が設けられているが,上記実施例
のような独立した溶鉄極6は設けられていない.キャッ
プ状仕切体15はシリコンセンサ素子1及び測温素子8を
包囲しつつヘッド9に固定され,開口部16a,16bを開設
し,内部に溶融金属滞留室17を形成する点は上記実施例
と同様であるが,該仕切体15自体が導電性材料により形
成されている.従って,この場合,仕切体15が溶鉄極6
の機能を兼備しており,リード線13に接続されている.
この際,仕切体15をなす導電性材料としてカーボングラ
ファイトを用いれば,該仕切体15が上述した炭素供給手
段としても機能することになり,構造が簡単になる.
尚,仕切体15をキャップ状に形成した場合,キャップ状
仕切体15の冷却効果により,溶融金属滞留室17内に流入
した溶鉄と外部溶鉄との間に温度差が生じると考えられ
るが,この実施例のように滞留室17内に測温素子8を配
設しておけば,滞留室17内の溶鉄温度を測定できるので
有利である. 第4図の実施例では,ヘッド9にはシリコンセンサ素子
1及び溶鉄極6が設けられ,開口部16a,16bを有し内部
に溶融金属滞留室17を形成するキャップ状仕切体15が該
シリコンセンサ素子1及び溶鉄極6を包囲してヘッド9
に固定されている.測温素子8は,第21図に示した従来
例と同様に本発明の測定装置とは別個に用いれば良い
が,第4図鎖線に示すようにキャップ状仕切体15の外に
おいてヘッド9に取付けても良い. 第5図の実施例では,ヘッド9にシリコンセンサ素子1
のみを設け,開口部16a,16bを有し内部に溶融金属滞留
室17を形成するキャップ状仕切体15により該シリコンセ
ンサ素子1を包囲している.キャップ状仕切体15は,第
3図の実施例と同様に,導電性材料により形成され,リ
ード線13に接続されることにより溶鉄極6としての機能
を兼備している.この実施例においても,測温素子8は
本発明の測定装置とは別個に用いることができるが,鎖
線に示すように仕切体15の外でヘッド9に取付けても良
い. 第6図の実施例では,ヘッド9にはシリコンセンサ素子
1と溶鉄極6とが設けられ,開口部16a,16bを有し内部
に溶融金属滞留室17を形成するキャップ状仕切体15によ
り該シリコンセンサ素子1のみを包囲している.従っ
て,溶鉄極6は仕切体15の外にある.尚,測温素子8は
本発明の測定装置とは別個に用いれば良いが,仕切体15
の外でヘッド9に取付けても良い. このように,本発明のシリコン濃度測定装置は,シリコ
ンセンサ素子1及び溶鉄極6のみを必要とするものであ
り,測温素子8は必ずしも必須のものではない.また,
溶鉄極6はそれ自体が独立して存在する必要はなく,仕
切体15によって溶鉄極を構成することが自由である.更
に,仕切体15により形成される溶融金属滞留室17は,シ
リコンセンサ素子1の周囲に形成することが必要である
が,それ以外に溶鉄極6等の周囲に形成することは必須
でない. ところで,第2図及び第3図の実施例では,キャップ状
仕切体15の外径が大径化し,溶鉄流による抵抗を受ける
ため,溶鉄が静止状態又は静止状態に近い場合の測定に
適している.これに対し,第4図乃至第6図の実施例で
は,キャップ状仕切体15の外径が小径化するので,溶鉄
流による抵抗を軽減することができ,溶鉄流の流れが速
い場合に有利である.また,キャップ状仕切体15を小型
化さた場合,これに応じて溶融金属体流室17の容積も小
となるので,炭素供給手段によって該滞留室17内の溶鉄
の炭素量を飽和状態に維持し易いという利点がある.更
に,測定すべき溶鉄の流速が速い場合又は溶鉄温度が高
い場合,小型のキャップ状仕切体15であれば外部の溶鉄
による熱交換が早く,シリコンセンサ素子の温度と溶鉄
温度とを短時間で等価せしめることができ,応答時間の
短い計測が可能となる点で有利である. (仕切体開口部の実施例) 上記第3図乃至第6図に示したような各キャップ状仕切
体15において,溶融金属滞留室17内に溶融金属を侵入せ
しめるための開口部の構成は,上記の他に,第7図乃至
第12図に示す実施例を採用することが可能である. 第7図の実施例において,キャップ状仕切体15は,先端
部に開口部16aを有する一方,周壁部に開口部16bとエア
抜き孔16cとを開設している.エア抜き孔16cは開口部16
bよりも上位に位置しているのが好ましい.従って,開
口部16a,16bから溶融金沿滞留室17内に溶融金属が侵入
するに際し,該室内のエアが孔16cから好適に排気さ
れ,室内に溶融金属を充満せしめることができる. 第8図の実施例では,キャップ状仕切体15は,先端部に
開口部16aを有する反面,周壁部にはエア抜き孔16cのみ
を開設している. 第9図の実施例では,キャップ状仕切体15は,先端より
やや後退した位置に開口部16aを周方向に間隔をおいて
複数個開設し,周壁部にエア抜き孔16cのみを開設して
いる. 第10図の実施例では,キャップ状仕切体15は,先端部に
開口部を有せず,周壁部に複数個の開口部16bを開設し
ている.開口部16bは比較的大径であり且つ複数個であ
るから,それ自体がエア抜きを兼ねることができる. 第11図の実施例では,第10図と同様のものにおいて,複
数個の開口部16bを上下方向に位相をずらせて配置して
いる.従って,上方に位置する開口部16bがエア抜きを
兼ねる. 第12図の実施例では,キャップ状仕切体15は,先端部に
開口部を有せず,周壁部に開口部16bを開設し,該開口
部16bよりも上方に位置してエア抜き孔16cを開設してい
る. (炭素供給手段の実施例) 本発明の炭素供給手段は,溶融金属滞留室17内に滞留し
た溶鉄中の炭素を積極的に飽和状態ならしめるものであ
れば良く,第3図及び第5図に基づき上述したように,
仕切体15の材質をそれ自体が溶鉄の熱により炭素を溶出
するようにカーボングラファイトによって成形すること
により実施できるが,この場合,仕切体15自体を炭素材
料により成形する他,任意の材質により形成した仕切体
15の表面に炭素材料を被着したり,或いは仕切体15の成
形材料中に炭素材料を含浸せしめることにより実施する
こともできる.また,第13図及び第14図に示すような実
施例を採用することもできる. 即ち,第13図の実施例において,シリコンセンサ素子1,
溶鉄極6,測温素子8を支持するヘッド9の耐火セメント
10上には,溶融金属滞留室17に臨んで炭素材料により成
形した板状体18が重合固着されている.前記シリコンセ
ンサ素子1,溶鉄極6,測温素子8は板状体18を挿通して延
びるが,板状体18の挿通孔には絶縁ブッシュが介在され
ている. 第14図の実施例では,ヘッド9から溶融金属滞留室17内
に炭素材料により成形した棒状体19が延びている. このように,溶融金属滞留室17内に筒状,板状その他の
任意の形態に整形された別体の炭素材料を装入すること
により,該滞留室17内の溶鉄中に炭素が溶出するように
し,これにより炭素供給手段を構成することができる. 更に,図示していないが,粒状,粉末状等の炭素材料を
封入した溶鉄中で破壊可能な又は炭素透過可能な殻体を
溶融金属滞留室17内に装入することにより,該滞留室17
内の溶鉄中に炭素が徐々に滲出するように構成し,これ
により炭素供給手段となすこともできる.この場合,溶
鉄との反応による影響をセンサに与えないように,炭素
材料がセンサ素子に直接,接触しないよう配備しておけ
ば良い. (第2実施例) 本発明は,シリコンセンサ素子近傍の溶鉄に積極的に炭
素を供給し,これにより測定溶鉄中の炭素量を飽和状態
ならしめ,以てセンサの起電力の変化幅を可及的小とす
ることが目的であり,この目的を達成するためには,上
記第1実施例に示したキャップ状仕切体15は必ずしも必
要でない.即ち,本件特許請求の範囲第1項に記載した
発明の実施例は,例えば,第15図に示すように,シリコ
ンセンサ素子1の周囲に炭素棒20等の炭素供給手段を配
置せしめたものとすることができる.この場合,シリコ
ンセンサ素子1の外周には,上記各実施例のようなキャ
ップ状仕切体による溶融金属滞留室を形成していない
が,溶鉄が静止状態又は静止状態に近い場合の測定に際
しては,前記目的を達するために充分な効果がある.
尚,図示省略しているが,第15図において,ヘッド9に
は必要に応じて溶鉄極及び測温素子が支持される. (第3実施例) 第16図に示す第3実施例において,ヘッド9にシリコン
センサ素子1を支持し,必要に応じて溶鉄極及び測温素
子(図示ぜす)を支持していることは上記第1実施例と
同様であるが,仕切体15は,基端をヘッド9に支持さ
れ,シリコンセンサ素子1の先端方向に延びる複数の爪
片15a,15aからなっている.複数の爪片は相互に間隔を
有し,両者間に開口部16を形成する.而して,この第3
実施例にあっても爪片15a,15aによりシリコンセンサ素
子1の周囲には溶融金属滞留室17が形成され,開口部16
から侵入した溶融金属を滞留室17内に滞留せしめること
ができる.尚,炭素供給手段は,上述した実施例のよう
に仕切体15自体を炭素材料で形成しても良く,又は別途
炭素材料を滞留室17内に装入しても良い. このように,本発明において,仕切体15は,シリコンセ
ンサ素子1の全周囲に溶融金沿滞留室17を形成するもの
であることは必要でなく,周囲の一部に滞留室17を形成
するものであれば良い.また,仕切体15による溶融金属
滞留室17と外部の溶融金属との仕切りは,本発明を使用
してシリコン濃度を測定すべき溶鉄の流動状態に応じて
適宜設計変更することが自由であり,例えば,溶鉄が比
較的静止状態に近い場合は,仕切体15を網状に形成する
こともできる. (試験例1) 第21図に示した従来公知の測定装置と,第17図に示した
本発明実施品に係る測定装置とにより,同じ条件の溶鉄
中のシリコン濃度を測定した.第17図に示した本発明実
施品は,ヘッド9に支持されたシリコンセンサ素子1,溶
鉄極6,測温素子8の三者をキャップ状仕切体15により包
囲したものであり,該キャップ状仕切体15の材質はカー
ボングラファイトである.キャップ状仕切体15は先端に
円形孔とした開口部16aを有し,周壁部の1個所に縦方
向スリット状の開口部16bを有する. 電位差計に表れた試験結果は,第18図に示す通りであ
り,実線が従来例,破線が本発明実施品の出力波形であ
る.試験測定は溶銃鍋中の溶銃を対象とし,溶銃温度は
1358〜1413℃,溶銃組成は,炭素(C)が,3.99〜4.89
%,シリコン(Si)が0.08〜0.38%である.Tは浸漬後起
電力指示平衡到達時間(Ta;従来例,Tb;本発明実施
品),ΔEは起電力指示平衡部変動幅(ΔEa;従来例,
ΔEb;本発明実施品)である. これによれば,本発明実施品は従来例に比し,浸漬後の
起電力指示平衡到達時間(Tb)が短く,従って応答時間
が短く,起電力指示平衡部の変動幅(ΔEb)が小,従っ
て上限値と下限値との差が小であることが確認された. 尚,試験は20回行ったが,その結果は下記の表1に示す
通りであった. (試験例2) 第21図に示した従来公知の測定装置と,第19図に示した
本発明実施品に係る測定装置とにより,同じ条件の溶銃
中のシリコン濃度を測定した.第19図に示した本発明実
施品は,ヘッド9にシリコンセンサ素子1と測温素子8
を支持し,キャップ状仕切体15によりシリコンセンサ素
子1のみを包囲したものである.キャップ状仕切体15の
材質はカーボングラファイトであり,該仕切体15自体が
溶鉄極6を兼ねている.キャップ状仕切体15は先端に円
形孔とした開口部16aを有し,周壁部の1個所に縦方向
スリット状の開口部16bを有する. 電位差計に表れた試験結果は,第20図に示す通りであ
り,実線が従来例,破線が本発明実施品の出力波形であ
る.試験測定は高炉樋中の溶銃を対象とし,溶銃温度は
1400〜1522℃,溶銃組成は,炭素(C)が4.2〜4.88
%,シリコン(Si)が0.15〜0.50%である.Tは浸漬後起
電力指示平衡到達時間(Ta;従来例,Tc;本発明実施
品),ΔEは起電力指示平衡部変動幅(ΔEa;従来例,
ΔEc;本発明実施品)である. これによれば,本発明実施品は従来例に比し,浸漬後の
起電力指示平衡到達時間(Tc)が短く,従って応答時間
が短く,起電力指示平衡部の変動幅(ΔEc)が小,従っ
て上限値と下限値との差が小であることが確認された. 尚,試験は19回行ったが,その結果は下記の表2に示す
通りであった. 〔発明の効果〕 特許請求の範囲第1項に記載の本発明によれば,炭素供
給手段によりシリコンセンサ素子近傍の溶融金属の炭素
量を測定期間中常に飽和状態に維持することが出来るた
め,溶融金属中の炭素量変動によるシリコン活量の変動
がなく,センサ出力を安定ならしめ,正確な測定が可能
となる. また,特許請求の範囲第2項に記載の本発明によれば,
仕切体によりシリコンセンサ素子の周囲に溶融金属滞留
室を形成し,該滞留室内に炭素を供給する手段を備えた
ので,該滞留室内にて溶融金属が測定期間中激しく流動
しないため,該金属中の炭素量を飽和状態に維持するこ
とが容易であると共に,流れのある場所での測定に際し
ても,溶融金属/副電極/固体電解質の三相界面が更新
される虞れが少なく,平衡到達時間が短縮されると共
に,安定した指示を得ることができ,迅速且つ安定した
測定が可能となるという効果がある.
DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application]
This is a device for measuring the concentration of silicon (Si). [Prior Art] Regarding a measuring method and an apparatus for impurity elements in molten metal,
Applying the technology of oxygen concentration battery with solid electrolyte
JP-A-61-142455, JP-A-61-260155,
Opened in Japanese Unexamined Patent Publication No. 61-260156 and Japanese Unexamined Patent Publication No. 61-260157.
It is shown. This will be explained with reference to the drawings.
As shown in Fig. 3, a device for measuring the silicon concentration in molten iron M
In, the silicon sensor element 1 has oxygen ion conductivity.
Inside the tubular body formed by the solid electrolyte 2 having
A silicon oxide is provided on the outer surface of the cylindrical body while having the quasi-electrode 3.
Compound and / or silicon composite oxide deposited in spots
It also has a sub-electrode 4. The reference electrode 3 is a reference substance 5
It is embedded inside, and the reference substance 5 is a reference oxygen content.
It regulates the pressure and is used in conventional oxygen concentration batteries.
It is similar to what is described. The molten metal electrode 6 is
Separated from the recon sensor element 1
A potential difference measuring circuit is provided between the silicon sensor element 1 and
Form. Therefore, the molten metal electrode 6 and the reference electrode 3 have a potential
It is connected to the difference meter 7. In addition, 8 is a temperature measuring element. Therefore, according to this device, measurement in molten metal M should be performed.
The silicon activity is stable and constant on the surface of the sub-electrode 4.
It exists as a quasi-chemical equilibrium band. Therefore,
By measuring the potential difference appearing on the potentiometer 7,
It is possible to know the concentration of silicon in molten metal. [Problems to be Solved by the Invention] According to the above conventional measuring device, the silicon concentration in the molten metal is
It is excellent in that it can detect the
There is a problem that the output result is not accurate. In this regard, the present inventor has found that the silicon activity in the molten metal is
The amount varies greatly depending on the amount of carbon contained in the metal.
It was found that the amount of carbon was larger and smaller than the silicon concentration.
Found to be the cause of inaccurate detection of
It was. In addition, the above-mentioned measuring device is composed of molten iron / sub-electrode / solid electrolyte.
It uses the principle of measuring the oxygen partial pressure at the phase interface.
However, the present inventor used the measuring device to measure
Compared to the case of measuring silicon concentration, it looks like blast furnace hot metal gutter
For measuring the concentration of silicon in molten metal flowing in
In this case, the three-phase interface is renewed, resulting in an equilibrium state.
Is difficult to reach, the equilibrium arrival time becomes longer, and the detection results
It was discovered to be extremely unstable. Therefore, the present invention makes these detection results inaccurate.
There is a problem in removing the cause
The problem was solved by. [Means for Solving Problems] First, the measurement principle based on the above-described measurement device will be described.
In both cases, the amount of carbon in the molten metal affects the fluctuation of silicon activity.
Explain why. In the above measuring device, the silicon sensor element 1 is configured.
Solid electrolyte 2 is a zirconia solid electrolyte (oxygen concentration
And a sub-electrode 4 formed on the surface of the solid electrolyte 2
SiO2Or SiO2And SiO2Complex oxides with other oxides,
For example ZrO2+ ZrSiOFourIf the substance consists of
If the consensus element is immersed in molten iron, the sub-electrode / zirco
At the three-phase interface of near solid electrolyte / molten iron
A balanced state occurs. Si (in Fe) + O2+ ZrO2= ZrSiOFour (1) The equilibrium constant K1 (T) of (1) is as follows.Where aZrSiOFour= 1, aZrO2When = 1, the above K1 (T)
IsBecomes. Where K1 (T) is a function of temperature only, and thermodynamically
Since it is known, the oxygen partial pressure at the three-phase interface can be adjusted to the zirconia solid state.
If measured with an electrolyte, the amount of silicon (Si) in molten iron
The activity can be measured. By the way, the information necessary for controlling molten iron components is silicon (Si).
Not the activity, but the amount of silicon (Si) (% by weight)
Then, the silicon in the molten iron measured in this way
Convert (Si) activity into silicon (Si) content (wt%)
This explains the formula. Electromotive force of silicon sensor and silicon (Si) activity and temperature
The relation of is as follows.By transforming equation (4) and rearranging h (Si), the following equation is obtained.
It ’s on the street.However: h (Si); Henry standard activity K1 (T); Si (in Fe) + O2+ ZrO2= ZrSiOFour Equilibrium constant of equation (1) log K1 (T) = 41900 / T-10.99 Po2(Ref); Reference substance (Mo-MoO2) Equilibrium oxygen partial pressure Po2(Ref) = exp (14.238-59049 / T) Pθ; electron conduction parameter log Pθ = 24.42-74370 / T T; absolute temperature F; Faraday constant 23052 (cal ・ V)-1・ Mol-1) R; Gas constant 1.98648 (cal ・ deg-1・ Mol-1) Henry's standard silicon activity h (Si) in molten iron is
It can be calculated from
[% Si] can be obtained. log h (Si) = ▲ eSi Si▼ [% Si] + ▲ eC Si▼ [% C] + log [Si] (6) However: ▲ eSi Si▼ = 0.109 ▲ eC Si▼ = 0.198 Therefore, from the above measurement principle, the amount of silicon (Si) in molten iron
The concentration can be measured. By the way, when measuring the silicon concentration in molten iron,
As measured by the solid electrolyte silicon sensor,
Is the activity of silicon (Si) in molten iron, and this activity is
Greatly affects the fluctuation of the amount of carbon (C) contained in molten iron
I have a problem of receiving it. That is, the concentration of silicon (Si)
If the amount of carbon (C) changes,
Correspondingly, the silicon activity value also fluctuates, and the silicon sensor
Electric power (E.M.F.) also changes. The information necessary for controlling molten iron components is the activity of silicon (Si).
Not the amount of silicon (Si) (% by weight)
Silicon (Si) activity can be detected by consensus
Therefore, the activity is accurately converted to the amount of silicon (% by weight).
Information about the amount of carbon (C) is needed to convert
Becomes. Here, the amount of carbon (C) with respect to the electromotive force of the silicon sensor
Explain the effect of. The relationship between silicon activity, temperature, and electromotive force is shown in (1) above.
Is transformed, the electromotive force at carbon (C) fluctuation, that is, ΔC
If the change is ΔE, it is shown by the following equation. log h (Si) = ▲ eSi Si▼ [% Si] + ▲ eC Si▼ [% C] + log
[% Si] log h ′ (Si) = ▲ eSi Si▼ [% Si] + ▲ eC Si▼ [% C
+ ΔC] + log [% Si] (9) (8) Formula- (7) Formula ΔE = ln {k1 (T) h '(Si)-1/4+ Pθ1/4} −ln {k1 (T) h (Si)-1/4+ Pθ1/4} (10) In equation (10), Pθ1/4<< {K1 (T) h (Si)}
-1/4And Eq. (10) should be simplified as
Can be done.In formula (11), F = 23052 (cal ・ V-1・ Mol-1) R = 1.98648 (cal ・ deg-1・ Mol-1) ▲ eC SiSubstituting ▼ = 0.198, the effect of the amount of carbon (C) on the cell electromotive force
Can be expressed as ΔE (mV) = 9.824 x 10-3× T (K) × ΔC (%) (12) When measuring silicon in molten iron using a known sensor
The amount of carbon (C) in molten iron is saturated or supersaturated.
Therefore, since it does not affect the electromotive force theoretically,
According to the experiments conducted by the invention, the actual operating conditions are
The amount of carbon (C) in molten iron varies considerably,
About 1% of the change was recognized in the
It has been found that the change in sensor electromotive force reaches approximately 17 mV.
It was. Therefore, in the conventional silicon sensor,
I must accept the measurement error in the range of change.
There is a problem. Therefore, the present inventor accurately grasps the amount of silicon in molten iron.
In order to achieve
Carbon fluctuations do not influence the calculation of the quantity.
We focused on the fact that certain conditions are necessary for measurement. by the way,
Various studies have been conducted on the saturated solubility of carbon.
However, the saturated solubility of carbon is generally calculated by
Is expressed. % C = 1.52 + 2.39 × 10-3Xt (° C) According to this, if the molten iron temperature is low, the carbon saturation solubility is low.
On the contrary, the higher the molten iron temperature, the higher the carbon saturation solubility.
Become. Therefore, the above-mentioned fluctuation of carbon content in the molten iron is due to the molten iron temperature.
It is due to the change of. Therefore, the inventor
The carbon in the molten iron is always kept saturated regardless of the change in
Knowing that you can solve the above problems by holding
It was. Therefore, according to the present invention, the molten metal near the silicon sensor element is
By adopting a method of actively supplying carbon to iron
Therefore, it is important to keep the carbon content saturated during the measurement period.
It is a feature. In addition, to measure the silicon concentration using a known sensor
When molten iron is flowing like blast furnace hot metal gutter,
As in the past, a bare sensor element is directly immersed in molten iron.
Then, the above-mentioned three-phase interface of molten iron / sub-electrode / solid electrolyte is
Since it is updated, the three-phase interface is unlikely to reach an equilibrium state,
It is said that the equilibrium time becomes longer and the instructions become unstable.
There is a problem. Thus, the inventor has found that molten iron near the silicon sensor element
Isolate from the influence of molten iron flow so that it does not flow during the measurement period
Have found that is advantageous. Moreover, like this
Prevent molten iron near the silicon sensor element from flowing
As a result, the carbon saturation state by the above-mentioned carbon supply means
Is easy to maintain. Therefore, the present invention is
Retains molten iron that has penetrated around the recon sensor element
It is characterized by forming a chamber. Therefore, the present invention is configured as a means of the above characteristics.
Is based on an example of a solid electrolyte having oxygen ion conductivity.
It has an electrode and a silicon acid on the other side of the solid electrolyte.
With a sub-electrode made of oxide and / or silicon composite oxide
And the silicon sensor element
Molten gold forming a potential difference measuring circuit between the sensor and the sensor element
With a metal pole: at least the silicon
Forming and retaining a molten metal retention chamber around the sensor element
A partition having an opening for allowing molten metal to enter the chamber;
Means for supplying carbon into the molten metal retention chamber
There is a point. [Examples] Examples of the present invention will be described in detail below with reference to the drawings. (First Embodiment) In the first embodiment shown in FIGS. 1 and 2, silicon is used.
The concentration measuring device includes a silicon sensor element 1 and a molten iron electrode.
(Molten metal electrode) 6 and temperature measuring element 8 are assembled together
It is included. The silicon sensor element 1 is based on Fig. 21.
The same as the above-mentioned conventionally known ones, the oxygen ion
Cylindrical cylinder with a bottom formed of a solid electrolyte 2 having conductivity
Has a reference electrode (not shown) inside the
Silicon oxide on the outer surface in spots or any other form
It has an attached sub-electrode 4. The solid electrolyte 2 is
In addition to the cylindrical shape as shown, it can be molded into various shapes
In short, a reference electrode is provided on one side of the solid electrolyte 2.
In addition, the sub-electrode 4 is provided on the other side, and molten iron (hot metal, molten steel
Other molten metal), the molten iron between the molten iron electrode 6 and
Any device that forms a potential difference measurement circuit via the above may be used. Well
Moreover, the sub-electrode 4 is directly deposited on the surface of the solid electrolyte 2.
In addition, it is supported by the solid electrolyte 2 with a minute gap.
May be The silicon sensor element 1, molten iron electrode 6, temperature measuring element 8 are preferably
To be specific, each base end should be the tip of the head 9 made of ceramic or the like.
Retained buried in refractory cement 10 filled in the opening
The The head 9 has a resistance to the outer surface as shown by the chain line in FIG.
It is inserted into a holder 11 consisting of a paper tube covered with a fire
Configure the probe with. In Fig. 2, 12 is
Reference electrode lead wire of silicon sensor element, 13 is molten iron electrode lead
The lead wire, 14 is the temperature measuring element lead wire,
Although it is inserted in the base end part of 9,
Connector on the holder 11 side through the connector.
It is desirable to be connected to the lead wire. Use
Sometimes, the lead wire 12 of the silicon sensor element 1 and the molten iron electrode 6
The lead wire 13 of is similar to the conventional sensor shown in FIG.
It is connected to a potentiometer. Thus, in this first embodiment, the silicon sensor element is
1, molten iron electrode 6, temperature measuring element 8 are placed on the cap-shaped partition 15
It is surrounded, and the base end of the partition 15 is attached to the head 9.
It is fixed. The partition body 15 has molten iron penetrated inside.
To do this, open the opening 16a at the tip and the opening 16b at the peripheral wall.
The molten gold surrounded by the partition 15
It forms a metal retention chamber 17. This partition 15 is
It does not break when immersed, and the amount of silicon in molten iron
While measuring (usually about 30 to 120 seconds)
It retains its shape without disappearing due to loss, etc.
If so, the material does not matter. However, it disappears after the measurement is completed.
I don't mind. Further, in the molten metal retention chamber 17, charcoal is
Means for supplying the element are provided. This carbon supply means
In the molten metal retention chamber 17, which will be described later in a preferred embodiment,
Positively saturates the carbon in the molten iron accumulated in the
For example, the material of the cap-shaped partition body 15 is
As such, it shall leach carbon by the heat of molten iron.
This can be done by and. (Example of Partition) In the above-described example, the silicon partition is formed by the cap-shaped partition 15.
Sensor element 1, molten iron electrode 6, temperature measuring element 8
In addition to the above, the embodiment shown in FIGS.
It is possible to adopt. In the embodiment shown in FIG. 3, the head 9 has a silicon sensor.
The element 1 and the temperature measuring element 8 are provided.
No separate molten iron electrode 6 is provided. Cap
The peg-shaped partition 15 includes the silicon sensor element 1 and the temperature measuring element 8.
It is fixed to the head 9 while being surrounded, and the openings 16a and 16b are opened.
However, the point that the molten metal retention chamber 17 is formed inside is that
But the partition 15 itself is made of a conductive material.
Has been made. Therefore, in this case, the partition 15 is the molten iron electrode 6
It also has the function of and is connected to the lead wire 13.
At this time, carbon graphite was used as the conductive material forming the partition 15.
If a fight is used, the partition body 15 will have the above-mentioned carbon supplier.
It will also function as a step, and the structure will be simple.
If the partition 15 is formed in a cap shape,
Due to the cooling effect of the partition body 15, it flows into the molten metal retention chamber 17
It is considered that there is a temperature difference between the molten iron and the external molten iron.
However, the temperature measuring element 8 is arranged in the retention chamber 17 as in this embodiment.
If it is installed, the molten iron temperature in the retention chamber 17 can be measured.
It is advantageous. In the embodiment shown in FIG. 4, the head 9 has a silicon sensor element.
1 and the molten iron electrode 6 are provided and have openings 16a, 16b
The cap-shaped partition 15 forming the molten metal retention chamber 17 is
A head 9 surrounding the silicon sensor element 1 and the molten iron electrode 6.
It is fixed to. The temperature measuring element 8 is the conventional one shown in FIG.
As in the example, it may be used separately from the measuring device of the present invention.
However, as shown by the chain line in Fig. 4, outside the cap-shaped partition 15.
It may be attached to the head 9 in advance. In the embodiment of FIG. 5, the silicon sensor element 1 is attached to the head 9.
Only, with openings 16a and 16b, and molten metal retention inside
The silicon partition is formed by the cap-shaped partition 15 that forms the chamber 17.
The sensor element 1 is surrounded. The cap-shaped partition 15 is
As in the embodiment shown in FIG.
Function as molten iron pole 6 by connecting to the lead wire 13
It has both. Also in this embodiment, the temperature measuring element 8 is
Although it can be used separately from the measuring device of the present invention,
It may be attached to the head 9 outside the partition 15 as shown by the line.
Yes. In the embodiment shown in FIG. 6, the head 9 has a silicon sensor element.
1 and the molten iron electrode 6 are provided and have openings 16a, 16b
By the cap-shaped partition 15 that forms the molten metal retention chamber 17 in
It surrounds only the silicon sensor element 1. Obey
The molten iron electrode 6 is outside the partition 15. The temperature measuring element 8
Although it may be used separately from the measuring device of the present invention, the partition 15
It may be attached to the head 9 outside the. Thus, the silicon concentration measuring device of the present invention is
Which requires only the sensor element 1 and the molten iron electrode 6.
Therefore, the temperature measuring element 8 is not always essential. Also,
The molten iron electrode 6 does not need to exist independently, and
It is free to construct the molten iron electrode by the cut body 15. Change
In addition, the molten metal retention chamber 17 formed by the partition body 15 is
It is necessary to form it around the recon sensor element 1.
However, in addition to that, it is essential to form around the molten iron electrode 6 etc.
Not. By the way, in the embodiment shown in FIG. 2 and FIG.
The outer diameter of the partition body 15 increases, and it receives resistance from the molten iron flow.
Therefore, it is suitable for measurement when molten iron is at rest or close to rest.
Are suitable. On the other hand, in the embodiment of FIGS. 4 to 6,
Because the outer diameter of the cap-shaped partition 15 is reduced, molten iron
The resistance due to the flow can be reduced, and the flow of the molten iron flow is fast.
It is advantageous when In addition, the cap-shaped partition 15 is small
If it is made smaller, the volume of the molten metal body flow chamber 17 will be correspondingly smaller.
Therefore, the molten iron in the retention chamber 17 is supplied by the carbon supply means.
It has the advantage that it is easy to maintain the carbon content of the saturated state. Change
In addition, if the molten iron flow velocity to be measured is high or the molten iron temperature is high.
If the cap-shaped partition 15 is small, the molten iron
The heat exchange due to
The temperature and the temperature can be made equal in a short time, and the response time
This is advantageous in that it enables short measurements. (Example of Partition Opening) Each cap-shaped partition as shown in FIG. 3 to FIG.
In the body 15, the molten metal is allowed to enter the molten metal retention chamber 17
In addition to the above, the structure of the opening for closing is shown in FIG.
It is possible to adopt the embodiment shown in FIG. In the embodiment shown in FIG. 7, the cap-shaped partition 15 has a tip.
While the opening 16a is provided on the peripheral part, the opening 16b and the air are provided on the peripheral wall.
The punched hole 16c is opened. The air vent hole 16c is the opening 16
It is preferable that it is located higher than b. Therefore, open
Molten metal penetrates into the molten gold residence chamber 17 through the mouths 16a and 16b.
When doing so, the air in the chamber is appropriately exhausted from the hole 16c.
It is possible to fill the room with molten metal. In the embodiment shown in FIG. 8, the cap-shaped partition body 15 has
Although it has the opening 16a, only the air vent hole 16c is provided in the peripheral wall.
Has been established. In the embodiment of FIG. 9, the cap-shaped partition body 15 is
The openings 16a are circumferentially spaced at the slightly retracted positions.
Open a plurality of holes and open only the air vent hole 16c on the peripheral wall.
There is. In the embodiment shown in FIG. 10, the cap-shaped partition body 15 is provided at the tip.
There are no openings, and multiple openings 16b are opened in the peripheral wall.
ing. The opening 16b has a relatively large diameter and a plurality of openings.
Therefore, it can also serve as the air bleeder. In the embodiment shown in FIG. 11, in the same manner as in FIG.
Place several openings 16b with the phases vertically shifted.
There is. Therefore, the opening 16b located above does not remove air.
Also serve. In the embodiment shown in FIG. 12, the cap-shaped partition body 15 is provided at the tip.
There is no opening, and the opening 16b is opened in the peripheral wall,
An air vent hole 16c is provided above the portion 16b.
The (Example of Carbon Supply Means) The carbon supply means of the present invention retains in the molten metal retention chamber 17
It positively saturates the carbon in the molten iron.
As described above with reference to FIGS. 3 and 5,
The material of the partition 15 itself elutes carbon by the heat of molten iron
Molding with carbon graphite to
In this case, the partition 15 itself is made of carbon material.
Partition body made of any material other than molding
A carbon material is attached to the surface of 15 or the partition 15 is formed.
Implemented by impregnating the shape material with a carbon material
You can also In addition, as shown in Figs.
It is also possible to adopt an example. That is, in the embodiment of FIG. 13, the silicon sensor element 1,
Refractory cement for head 9 supporting molten iron electrode 6 and temperature measuring element 8
The upper part of 10 is made of carbon material facing the molten metal retention chamber 17.
The shaped plate 18 is polymerized and fixed. The silicon cell
The sensor element 1, the molten iron electrode 6, and the temperature measuring element 8 extend through the plate-shaped body 18.
However, an insulating bush is interposed in the insertion hole of the plate-shaped body 18.
ing. In the embodiment of FIG. 14, from the head 9 to the molten metal retention chamber 17
A rod-shaped body 19 formed of a carbon material extends on the. In this way, in the molten metal retention chamber 17, cylindrical, plate-shaped or other
Inserting a separate carbon material shaped into any shape
So that carbon is eluted in the molten iron in the retention chamber 17
However, this can constitute a carbon supply means. Furthermore, although not shown, granular or powdery carbon materials
A shell that can be broken or carbon permeable in the enclosed molten iron
By charging the molten metal retention chamber 17 into the retention chamber 17
It is configured so that carbon gradually exudes into the molten iron inside the
Can also be used as a carbon supply means. In this case,
To prevent the sensor from being affected by the reaction with iron, carbon
Place the material so that it does not come into direct contact with the sensor element.
Good. (Second Embodiment) The present invention positively carbonizes molten iron in the vicinity of a silicon sensor element.
Element is supplied, and the amount of carbon in the measured molten iron is saturated.
Normalization, and the change width of the electromotive force of the sensor is made as small as possible.
The goal is to
The cap-shaped partition 15 shown in the first embodiment is not always necessary.
It doesn't matter. That is, as described in claim 1 of the present patent claim
The embodiment of the invention is, for example, as shown in FIG.
A carbon supply means such as a carbon rod 20 is arranged around the sensor element 1.
It can be placed. In this case,
On the outer periphery of the sensor element 1, the caps as in each of the above embodiments are provided.
No molten metal retention chamber is formed by the cup-shaped partition
However, when measuring molten iron when it is at rest or close to rest,
Then, there is a sufficient effect to achieve the above purpose.
Although not shown, in FIG.
If necessary, the molten iron electrode and temperature measuring element are supported. (Third Embodiment) In the third embodiment shown in FIG. 16, the head 9 is made of silicon.
Supports sensor element 1, and if necessary, molten iron electrode and temperature measuring element
The fact that the child (the chair in the drawing) is supported is the same as in the first embodiment.
Similarly, the partition body 15 has its base end supported by the head 9.
A plurality of claws extending in the direction of the tip of the silicon sensor element 1.
It consists of pieces 15a and 15a. The nail pieces are spaced from each other
And has an opening 16 formed between them. Therefore, this third
Even in the embodiment, the silicon sensor element is
A molten metal retention chamber 17 is formed around the child 1 and has an opening 16
The molten metal that has entered from the inside is retained in the retention chamber 17.
Can be done. The carbon supply means is the same as in the above-mentioned embodiment.
The partition 15 itself may be made of a carbon material, or separately.
A carbon material may be charged in the retention chamber 17. As described above, in the present invention, the partition body 15 is made of silicon.
Forming the molten gold storage chamber 17 around the entire circumference of the sensor element 1
It is not necessary to be
Anything can be done. In addition, the molten metal by the partition 15
The present invention is used for the partition between the residence chamber 17 and the molten metal outside.
Depending on the flow state of molten iron for which the silicon concentration should be measured
You can freely change the design appropriately.
When it is relatively close to the stationary state, the partition body 15 is formed in a net shape.
You can also (Test Example 1) The conventionally known measuring device shown in FIG. 21 and the one shown in FIG.
Molten iron under the same conditions with the measuring device according to the embodiment of the present invention
The silicon concentration inside was measured. The present invention shown in FIG.
The product is a silicon sensor element 1 supported by the head 9 and melted.
The iron electrode 6 and the temperature measuring element 8 are enclosed by a cap-shaped partition 15.
The cap-shaped partition 15 is made of a car.
Bon graphite. The cap-shaped partition 15 is at the tip
It has an opening 16a that is a circular hole, and extends vertically at one location on the peripheral wall.
It has a slit-shaped opening 16b. The test results appearing on the potentiometer are as shown in Figure 18.
The solid line is the conventional example, and the broken line is the output waveform of the product of the present invention.
The The test measurement is for the gun in the gun pot, and the gun temperature is
1358 ~ 1413 ℃, melting gun composition, carbon (C) is 3.99 ~ 4.89
%, Silicon (Si) is 0.08 to 0.38%.
Power indication equilibrium arrival time (Ta; Conventional example, Tb; Implementation of the present invention
Product), ΔE is the fluctuation range of the electromotive force indicating balance part (ΔEa; conventional example,
ΔEb; product of the present invention). According to this, compared to the conventional example, the product of the present invention is
The electromotive force indicating equilibrium arrival time (Tb) is short, so the response time is
Is short, the fluctuation range (ΔEb) of the electromotive force indicating balance part is small,
It was confirmed that the difference between the upper and lower limits was small. The test was conducted 20 times, and the results are shown in Table 1 below.
It was on the street.(Test Example 2) The conventionally known measuring device shown in FIG. 21 and the one shown in FIG.
With the measuring device according to the embodiment of the present invention, a melting gun under the same conditions
The silicon concentration inside was measured. The present invention shown in FIG.
The product is a head 9, a silicon sensor element 1 and a temperature measuring element 8.
The silicon sensor element that supports the
It surrounds only child 1. 15 cap-shaped partitions
The material is carbon graphite, and the partition 15 itself
Also serves as the molten iron pole 6. The cap-shaped partition 15 is circular at the tip
It has an opening 16a in the shape of a hole, and is longitudinally located at one location on the peripheral wall.
It has a slit-shaped opening 16b. The test results appearing on the potentiometer are as shown in Figure 20.
The solid line is the conventional example, and the broken line is the output waveform of the product of the present invention.
The The test measurement is for the gun in the blast furnace gutter, and the gun temperature is
1400 to 1522 ℃, melting gun composition is carbon (C) 4.2 to 4.88
%, Silicon (Si) is 0.15 to 0.50%.
Power indication equilibrium arrival time (Ta; conventional example, Tc; implementation of the present invention
Product), ΔE is the fluctuation range of the electromotive force indicating balance part (ΔEa; conventional example,
ΔEc; product of the present invention). According to this, compared to the conventional example, the product of the present invention is
The electromotive force indicating equilibrium arrival time (Tc) is short, so the response time is
Is short, and the fluctuation range (ΔEc) of the electromotive force indicating balance part is small.
It was confirmed that the difference between the upper and lower limits was small. The test was performed 19 times, and the results are shown in Table 2 below.
It was on the street.[Effect of the invention] According to the present invention described in claim 1, carbon supply
Carbon of molten metal near the silicon sensor element by the feeding means
The amount can be kept saturated during the measurement period.
Therefore, fluctuations in silicon activity due to fluctuations in carbon content in molten metal
The sensor output is stable and accurate measurement is possible.
Becomes. Further, according to the present invention described in claim 2,
Molten metal stays around the silicon sensor element by the partition
A means for forming a chamber and supplying carbon into the retention chamber was provided.
Therefore, the molten metal flows violently in the retention chamber during the measurement period.
Therefore, the amount of carbon in the metal must be kept saturated.
It is easy to perform and when measuring in a place with flow
However, the three-phase interface of molten metal / sub-electrode / solid electrolyte is updated
Is less likely to occur and the equilibrium arrival time is shortened.
In addition, stable instructions can be obtained, which is fast and stable.
This has the effect of enabling measurement.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の第1実施例を一部破断して示す斜視
図,第2図は同実施例を一部断面にて示す側面図,第3
図乃至第6図はそれぞれ仕切体の異なる実施例を一部断
面にて示す側面図,第7図乃至第12図はそれぞれ仕切体
の開口部の異なる実施例を示す断面図,第13図及び第14
図はそれぞれ炭素供給手段の異なる実施例を示す断面
図,第15図は本発明の第2実施例を示す斜視図,第16図
は本発明の第3実施例を一部破断して示す斜視図,第17
図は試験例1に用いた本発明実施品を示す断面図,第18
図は同試験例と従来例との試験結果を示す波形図,第19
図は試験例2に用いた本発明実施品を示す断面図,第第
20図は同試験例と従来例との試験結果を示す波形図,第
21図は従来公知例の使用状態を示す断面図である. 1……シリコンセンサ素子,2……固体電解質,3……基準
電極,4……副電極,6……溶融金属極,7……電位差計,8…
…測温素子,15……仕切体,16(16a,16b)……開口部,17
……溶融金属滞留室,18,19,20……炭素供給手段(板状
体,棒状体,炭素棒).
FIG. 1 is a perspective view showing a first embodiment of the present invention partially broken away, and FIG. 2 is a side view showing a partial cross section of the same embodiment, and FIG.
FIGS. 6 to 6 are side views showing partially different sectional embodiments of the partition body, and FIGS. 7 to 12 are sectional views showing different embodiments of the opening of the partition body, FIG. 13 and FIG. 14th
FIG. 15 is a sectional view showing a different embodiment of carbon supplying means, FIG. 15 is a perspective view showing a second embodiment of the present invention, and FIG. 16 is a perspective view showing a partially broken third embodiment of the present invention. Figure, No. 17
FIG. 18 is a sectional view showing a product of the present invention used in Test Example 1, No. 18
Fig. 19 is a waveform diagram showing the test results of the same test example and the conventional example.
FIG. 1 is a sectional view showing a product of the present invention used in Test Example 2,
Figure 20 is a waveform diagram showing the test results of the same test example and the conventional example.
Fig. 21 is a cross-sectional view showing the usage state of a conventionally known example. 1 ... Silicon sensor element, 2 ... Solid electrolyte, 3 ... Reference electrode, 4 ... Sub electrode, 6 ... Molten metal electrode, 7 ... Potentiometer, 8 ...
… Temperature measuring element, 15 …… Partitioner, 16 (16a, 16b) …… Opening, 17
…… Molten metal retention chamber, 18, 19, 20 …… Carbon supply means (plate, rod, carbon rod).

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】酸素イオン導電性を有する固体電解質の一
側に基準電極を有すると共に,該固体電解質の他側にシ
リコン酸化物及び/又はシリコン複合酸化物からなる副
電極を有するシリコンセンサ素子と,溶融金属中にて前
記シリコンセンサ素子との間に電位差測定回路を形成す
る溶融金属極とを備えたものにおいて:前記シリコンセ
ンサ素子の周囲に炭素を供給する手段を備えてなること
を特徴とする溶融金属中のシリコン濃度測定装置.
1. A silicon sensor element having a reference electrode on one side of a solid electrolyte having oxygen ion conductivity and a sub-electrode made of silicon oxide and / or silicon composite oxide on the other side of the solid electrolyte. A molten metal electrode forming a potential difference measurement circuit between the silicon sensor element and the silicon sensor element in a molten metal: comprising means for supplying carbon to the periphery of the silicon sensor element Measuring device for silicon concentration in molten metal.
【請求項2】酸素イオン導電性を有する固体電解質の一
側に基準電極を有すると共に,該固体電解質の他側にシ
リコン酸化物及び/又はシリコン複合酸化物からなる副
電極を有するシリコンセンサ素子と,溶融金属中にて前
記シリコンセンサ素子との間に電位差測定回路を形成す
る溶融金属極とを備えたものにおいて:少なくとも前記
シリコンセンサ素子の周囲に溶融金属滞留室を形成し且
つ該滞留室に溶融金属を侵入せしめる開口部を有する仕
切体と,前記溶融金属滞留室内に炭素を供給する手段と
を備えてなることを特徴とする溶融金属中のシリコン濃
度測定装置.
2. A silicon sensor element having a reference electrode on one side of a solid electrolyte having oxygen ion conductivity and a sub-electrode made of silicon oxide and / or silicon composite oxide on the other side of the solid electrolyte. In a molten metal having a molten metal electrode forming a potential difference measuring circuit between the silicon sensor element and the silicon sensor element: a molten metal retention chamber is formed at least around the silicon sensor element, and An apparatus for measuring silicon concentration in molten metal, comprising: a partition body having an opening for allowing molten metal to enter; and means for supplying carbon into the molten metal retention chamber.
JP62023353A 1987-02-02 1987-02-02 Device for measuring silicon concentration in molten metal Expired - Lifetime JPH0746088B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62023353A JPH0746088B2 (en) 1987-02-02 1987-02-02 Device for measuring silicon concentration in molten metal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62023353A JPH0746088B2 (en) 1987-02-02 1987-02-02 Device for measuring silicon concentration in molten metal

Publications (2)

Publication Number Publication Date
JPS63191056A JPS63191056A (en) 1988-08-08
JPH0746088B2 true JPH0746088B2 (en) 1995-05-17

Family

ID=12108212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62023353A Expired - Lifetime JPH0746088B2 (en) 1987-02-02 1987-02-02 Device for measuring silicon concentration in molten metal

Country Status (1)

Country Link
JP (1) JPH0746088B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005060493B3 (en) * 2005-12-15 2006-11-30 Heraeus Electro-Nite International N.V. Test probe, for taking measurements in metal melt, comprises refractory material that covers forward part of bath contact but not rearward part
JP4664855B2 (en) * 2006-04-25 2011-04-06 黒崎播磨株式会社 Evaluation method for wear resistance of refractories
JP4908335B2 (en) * 2006-08-09 2012-04-04 日本特殊陶業株式会社 Liquid state detection sensor
JP2009068855A (en) * 2007-09-10 2009-04-02 Heraeus Electro Nite Japan Ltd Probe for measuring concentration of copper in molten metal
CN114804091B (en) * 2022-04-26 2023-09-22 深圳市钢昱碳晶科技有限公司 Molten iron-assisted graphitized artificial graphite negative electrode material and manufacturing method thereof

Also Published As

Publication number Publication date
JPS63191056A (en) 1988-08-08

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