JPH0748096B2 - light deflection element - Google Patents
light deflection elementInfo
- Publication number
- JPH0748096B2 JPH0748096B2 JP1-508308A JP50830889A JPH0748096B2 JP H0748096 B2 JPH0748096 B2 JP H0748096B2 JP 50830889 A JP50830889 A JP 50830889A JP H0748096 B2 JPH0748096 B2 JP H0748096B2
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- Japan
- Prior art keywords
- light
- thin film
- liquid crystal
- conductive thin
- guided light
- Prior art date
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Description
【発明の詳細な説明】
技術分野
本発明は光の方向を変化させ制御する、または光の集光
点を変位させ制御する装置に関するものである。Description: TECHNICAL FIELD The present invention relates to a device for changing and controlling the direction of light or for displacing and controlling the focal point of light.
背景技術
従来の技術について、例えば「光集積回路(西原浩
他、オーム社」)のp328に記載のLiNbO3導波路を用いた
音響光学ブラックセルや第35回応用物理学関連連合講演
会28a−ZQ−4の講演に示されているSAW光偏向素子に基
づいて説明する。第1図は従来の光偏向素子の構成図を
示す。LiNbO3基板27上にTi拡散導波層28が形成され、入
力プリズム29に入射するレーザ光30は導波層28内を伝搬
する導波光31となり、導波光31はSAW光偏向素子32によ
って透過導波光33と回折導波光34に分離し、それぞれ出
力プリズム35によって放射され、透過光36と回折光37に
なる。回折導波光34の回折角はSAW光偏向素子26によっ
ておこされる弾性波38のピッチによって決まり、SAW光
偏向素子32に加えられる電気信号により回折導波光34の
回折角、すなわち回折光37の放射方向を変えることがで
きる。BACKGROUND ART Regarding the prior art, see, for example, "Optical Integrated Circuits (Hiroshi Nishihara)"
This explanation will be based on the acousto-optical black cell using a LiNbO3 waveguide described on page 328 of "Ohmsha et al." and the SAW optical deflector shown in a lecture at the 35th Joint Conference on Applied Physics, 28a- ZQ -4. Figure 1 shows the configuration of a conventional optical deflector. A Ti - diffused waveguide layer 28 is formed on a LiNbO3 substrate 27. Laser light 30 incident on an input prism 29 becomes guided light 31 propagating within the waveguide layer 28. The guided light 31 is split by a SAW optical deflector 32 into transmitted guided light 33 and diffracted guided light 34, which are then emitted by an output prism 35 as transmitted light 36 and diffracted light 37, respectively. The diffraction angle of the diffracted guided light 34 is determined by the pitch of the acoustic waves 38 generated by the SAW optical deflector 26. The diffraction angle of the diffracted guided light 34, i.e., the radiation direction of the diffracted light 37, can be changed by applying an electrical signal to the SAW optical deflector 32.
しかしながら、このような従来の光偏向素子において以
下の問題点があった。すなわちSAW光偏向素子32によっ
て生じる回折角の変化は微少であり、光を大きく偏向す
ることができなかった。また、偏向されるのは回折光で
ありその入力光30に対するエネルギーの利用効率が低い
ものであった。However, such conventional optical deflection elements have the following problems: The change in the diffraction angle caused by the SAW optical deflection element 32 is small, and it is not possible to deflect light significantly. Also, it is the diffracted light that is deflected, and the energy utilization efficiency of this light relative to the input light 30 is low.
発明の開示
本発明はかかる問題点を解消し、光を大きく偏向するこ
とができ、またエネルギーの利用効率の高い、極めて新
規な光偏向素子を提供するものである。DISCLOSURE OF THE INVENTION The present invention solves the above problems and provides a novel light deflecting element that can deflect light to a large extent and has high energy utilization efficiency.
すなわち、本発明は基板上に導電性薄膜を形成し、導電
性薄膜上に透明層を挟んで導波層を形成し、導波層上に
液晶を挟んで表面に透明導電性薄膜の形成された透明基
板を密着させ、導波層には導波光の伝搬方向に沿って周
期構造が形成されており、この周期構造により導波光が
放射されて放射光となり、導電性薄膜と透明導電性薄膜
との間に電圧信号を加えることで放射光の方向を加える
ことを特徴とする。なお、導波層または透明導電性薄膜
の表面には液晶を配向する手段が構成されており、その
配向方向が導波光の伝搬方向と平行または直交すること
を特徴とする光偏向素子である。That is, the present invention is characterized in that a conductive thin film is formed on a substrate, a waveguide layer is formed by sandwiching a transparent layer on the conductive thin film, a transparent substrate with a transparent conductive thin film formed on the surface is tightly attached to the waveguide layer with liquid crystal sandwiched between them, a periodic structure is formed in the waveguide layer along the propagation direction of the guided light, the guided light is radiated by this periodic structure to become radiated light, and the direction of the radiated light can be controlled by applying a voltage signal between the conductive thin film and the transparent conductive thin film.In addition, the optical deflector element is characterized in that a means for aligning the liquid crystal is formed on the surface of the waveguide layer or the transparent conductive thin film, and the alignment direction is parallel or perpendicular to the propagation direction of the guided light.
また周期構造を同心円状とし、導波光は周期構造に直交
して伝搬し、導波層からの放射光を導波層外の一つもし
くはいくつかの集光点に集光させ、電圧信号により集光
点の位置を変えることを特徴とする。なお、導電性薄膜
または透明導電性薄膜を多くの領域に分割し、各分割領
域に電圧信号を独立して加えることで集光点の位置を変
えてもよい。The periodic structure is concentric, the guided light propagates perpendicular to the periodic structure, the light emitted from the waveguide layer is focused at one or several focusing points outside the waveguide layer, and the position of the focusing points can be changed by applying a voltage signal. Alternatively, the conductive thin film or transparent conductive thin film can be divided into many regions, and the position of the focusing point can be changed by applying a voltage signal to each divided region independently.
図面の簡単な説明
第1図は従来の光偏向素子を示す原理説明図、第2図は
本発明の一実施例の光偏向素子の断面構成図、第3図
(a)(b)は同光偏向素子における信号波の振幅変調
を示す説明図、第4図(a)(b)(c)は本発明にお
ける振幅変調信号による液晶配向方向の変化と屈折率分
布の変化を示す説明図、第5図(a)(b)は本発明に
おける振幅変調信号振幅vと等価導波層厚Teffの関係図
および等価導波層厚Teffと等価屈折率Nの関係図、第6
図(a)(b)は液晶の屈折率異方性による偏光影響を
示す説明図、第7図は本発明の第2実施例における光偏
向素子の断面構成図、第8図は本発明の第3実施例にお
ける光偏向素子の説明図、第9図は本発明の第3実施例
におけるにおける導波光を中心から放射方向に伝搬させ
るための実施例を示す断面説明図、第10図は本発明の第
3実施例における光偏向素子の説明図である。Brief Description of the Drawings: Figure 1 is a diagram illustrating the principle of a conventional optical deflection element, Figure 2 is a cross-sectional configuration diagram of an optical deflection element according to an embodiment of the present invention, Figures 3(a) and 3(b) are diagrams illustrating amplitude modulation of a signal wave in the optical deflection element, Figures 4(a), 4(b), and 4(c) are diagrams illustrating changes in the liquid crystal alignment direction and changes in refractive index distribution due to an amplitude modulation signal according to the present invention, Figures 5(a) and 5(b) are diagrams illustrating the relationship between the amplitude modulation signal amplitude v and the equivalent waveguide layer thickness Teff and the relationship between the equivalent waveguide layer thickness Teff and the equivalent refractive index N according to the present invention, Figure 6
Figures (a) and (b) are explanatory diagrams showing the polarization effect due to the refractive index anisotropy of liquid crystal, Figure 7 is a cross-sectional configuration diagram of the optical deflection element in the second embodiment of the present invention, Figure 8 is an explanatory diagram of the optical deflection element in the third embodiment of the present invention, Figure 9 is a cross-sectional explanatory diagram showing an embodiment for propagating guided light in a radial direction from the center in the third embodiment of the present invention, and Figure 10 is an explanatory diagram of the optical deflection element in the third embodiment of the present invention.
発明を実施するための最良の形態
以下本発明の実施例を第2図から第10図に基づいて説明
する。第2図は本発明の第1実施例における光偏向素子
の断面構成図である。第2図に示すように、基板1上に
は導電性薄膜2、透明層3を挟んで透明層3よりも高屈
折率の透明層4が形成されている。透明層3上にはグレ
ーティング3Gが形成されており、透明層4の表面にはポ
リイミド等の透明配向膜4Pが形成されている。なお透明
層4は透明配向膜4Pと合わさり導波層として機能する。
透明基板7の表面にはITO等の透明導電性薄膜6が形成
されており、液晶5を挟んで透明配向膜4Pと密着されて
いる。導波層4、4Pを導波する導波光8はグレーティン
グ3Gにより液晶5側に放射される光9と基板1側に放射
される光9′となり、放射光9′は導電性薄膜2または
基板1表面を反射して放射光9に重なる。放射光9の回
折角θ(基板表面の法線10となる角、なお最終的に空気
層に放射されるときの角で表わす)は次式で与えられ
る。BEST MODE FOR CARRYING OUT THE INVENTION Below, embodiments of the present invention will be described with reference to Figs. 2 to 10. Fig. 2 is a cross-sectional view of the optical deflector element in a first embodiment of the present invention. As shown in Fig. 2, a conductive thin film 2 and a transparent layer 3 are formed on a substrate 1, with a transparent layer 4 having a higher refractive index than transparent layer 3 sandwiched between them. A grating 3G is formed on transparent layer 3, and a transparent alignment film 4P made of polyimide or the like is formed on the surface of transparent layer 4. The transparent layer 4 functions as a waveguide layer in combination with the transparent alignment film 4P.
A transparent conductive thin film 6 made of ITO or the like is formed on the surface of the transparent substrate 7, and is in close contact with the transparent alignment film 4P, sandwiching the liquid crystal 5 therebetween. The guided light 8 guided through the waveguide layers 4, 4P is divided by the grating 3G into light 9 radiated toward the liquid crystal 5 and light 9' radiated toward the substrate 1, and the radiated light 9' is reflected by the conductive thin film 2 or the surface of the substrate 1 and overlaps with the radiated light 9. The diffraction angle θ of the radiated light 9 (the angle normal 10 to the substrate surface, expressed as the angle when it is finally radiated into the air layer) is given by the following equation:
sinθ=N+qλ/Λ …(1)
λはレーザー光の波長、Nは導波路の等価屈折率、Λは
グレーティングのピッチ、
qは結合次数であり2ビーム結合の場合q=−1とな
る。 sin θ=N+qλ/Λ (1) where λ is the wavelength of the laser light, N is the equivalent refractive index of the waveguide, Λ is the pitch of the grating, and q is the coupling order, which is −1 in the case of two-beam coupling.
配向膜4Pは導波光8の伝搬方向またはこれと直交する方
向にラビングされており、配向膜表面近傍における液晶
の配向方向もこのラビング方向と一致する。信号波発生
器11により得られる信号波は振幅変調器12により振幅変
調され、その振幅変調信号が導電性薄膜2と透明導電性
薄膜6との間に加えられる。なお、液晶の配向手段を透
明導電性薄膜6の表面に施してもよい。The alignment film 4P is rubbed in the propagation direction of the guided light 8 or in a direction perpendicular to this direction, and the alignment direction of the liquid crystal near the surface of the alignment film also coincides with this rubbing direction. A signal wave generated by a signal wave generator 11 is amplitude-modulated by an amplitude modulator 12, and the resulting amplitude-modulated signal is applied between the conductive thin film 2 and the transparent conductive thin film 6. Alternatively, the liquid crystal alignment means may be applied to the surface of the transparent conductive thin film 6.
第3図(a)(b)は信号波13が振幅変調され振幅変調
信号14となる様子を示し、振幅変調信号14のエンベロー
ブ波形は振幅vAを中心に振れている。なお電極に加える
電圧信号は液晶の加水分解の問題から本実施例の様に振
幅変調したほうが好ましいが、信号波13を直接電極に印
加してもよい。3(a) and (b) show how the signal wave 13 is amplitude-modulated to become the amplitude-modulated signal 14, and the envelope waveform of the amplitude-modulated signal 14 oscillates around an amplitude v A. Although it is preferable to amplitude-modulate the voltage signal applied to the electrodes as in this embodiment due to the problem of hydrolysis of the liquid crystal, the signal wave 13 may also be applied directly to the electrodes.
第4図(a)(b)(c)は振幅変調信号による配向方
向の変化と、法線方向の屈折率分布の変化を示す。な
お、一般に液晶5は屈折率異方性を示し、その正常光に
対する屈折率nOは異常光に対する屈折率nEよりも小さ
く、その配向方向の変化は基板法線10(x軸方向)とラ
ビング方向(z軸方向)とを含む平面内で起こる。第4
図(a)(b)(c)は振幅変調信号14の振幅が小さい
時を示し、液晶分子5Aの配向方向は配向膜4P表面に平行
である。従ってTMモードの導波光8がラビング方向(z
軸方向)またはそれに直交する方向(y軸方向、すなわ
ち紙面に垂直な方向)に伝搬すれば、導波光に対する液
晶5の屈折率は正常光に対する屈折率nOに等しい。従っ
てx軸方向に沿った液晶5の屈折率分布はほぼ一様にnO
となり18aの分布を示す。透明層4の膜厚をtFとすると
導波層の等価導波層厚はtFと2つのエバネッセント光の
幅の和で表され、導波層から液晶内ににじみ出るエバネ
ッセント光の幅をta、透明層3内ににじみ出るエバネッ
セント光の幅をt0とした場合Teff=t0+tF+tbとなる。
なお一般に液晶内を伝搬する導波光の伝搬損失は20〜30
dB/cmと大きいが、液晶内のエバネッセント光量の、全
導波光量に対する比率は小さいので導波光全体としての
伝搬損失は小さい。4(a), (b), and (c) show the change in the alignment direction due to the amplitude modulation signal and the change in the refractive index distribution in the normal direction. Generally, the liquid crystal 5 exhibits refractive index anisotropy, and its refractive index nO for ordinary light is smaller than its refractive index nE for extraordinary light. The alignment direction changes in the plane including the substrate normal 10 (x-axis direction) and the rubbing direction (z-axis direction).
1A, 1B, and 1C show the case where the amplitude of the amplitude modulation signal 14 is small, and the alignment direction of the liquid crystal molecules 5A is parallel to the surface of the alignment film 4P. Therefore, the guided wave 8 in the TM mode is aligned in the rubbing direction (z
If the guided light propagates in the x-axis direction or in the direction perpendicular to it (the y-axis direction, i.e., the direction perpendicular to the paper), the refractive index of the liquid crystal 5 for the guided light is equal to the refractive index n O for ordinary light. Therefore, the refractive index distribution of the liquid crystal 5 along the x-axis is almost uniform, n O
If the film thickness of the transparent layer 4 is tF , the equivalent waveguide thickness of the waveguide layer is expressed as the sum of tF and the width of the two evanescent lights, and if the width of the evanescent light leaking from the waveguide layer into the liquid crystal is ta and the width of the evanescent light leaking into the transparent layer 3 is t0 , then Teff = t0 + tF + tb .
Generally, the propagation loss of guided light propagating through liquid crystal is 20 to 30
Although the loss is large at dB/cm, the ratio of the amount of evanescent light in the liquid crystal to the amount of total guided light is small, so the propagation loss of the entire guided light is small.
一方、TEモードの導波光8が配向方向に直交する方向
(y軸方向)に伝搬すれば、導波光に対する液晶5の屈
折率は異常光に対する屈折率nEに等しい。従って、法線
方向に沿った液晶5の屈折率分布は18a′の分布とな
る。この時導波光が導波層から液晶内ににじみ出るエバ
ネッセント光の幅をta′、透明層3内ににじみ出るエバ
ネッセント光の幅をt0′とする。On the other hand, if the TE mode guided light 8 propagates in the direction perpendicular to the orientation direction (the y-axis direction), the refractive index of the liquid crystal 5 for the guided light is equal to the refractive index nE for the extraordinary light. Therefore, the refractive index distribution of the liquid crystal 5 along the normal direction is distribution 18a'. In this case, the width of the evanescent light of the guided light seeping out from the waveguide layer into the liquid crystal is defined as t a ', and the width of the evanescent light seeping out into the transparent layer 3 is defined as t 0 '.
第4図(b)は振幅変調信号14の振幅を大きくした場合
を示し、5B′に示すように液晶分子の配向方向が配向膜
4P表面と直交する方向(x軸方向)を向く。ただし配向
膜近傍の液晶分子5Bは配向膜4Pによる配向保持力が強く
十分に法線方向を向いていない。従ってTMモードの導波
光8がz軸方向またはy軸方向に伝搬すれば、導波光に
対する液晶5の屈折率は透明導電性薄膜6近傍では異常
光に対する屈折率nEに近く、配向膜表面近傍では正常光
に対する屈折率nOに近い。従って法線方向(x軸方向)
に沿った液晶5の屈折率は18bの分布を示す。この時導
波光が導波層から液晶内ににじみ出るエバネッセント光
の幅をtbとすると、tb>taである。一方TEモードの導波
光8がy軸方向にに伝搬すれば、導波光に対する液晶5
の屈折率は透明導電性薄膜6近傍では正常光に対する屈
折率nOに近く、配向膜表面近傍では異常光に対する屈折
率nEに近い。従って法線方向(x軸方向)に沿った液晶
5の屈折率は18b′の分布を示す。この時導波光が導波
層から液晶内ににじみ出るエバネッセント光の幅をtb′
とすると、tb′<ta′である。FIG. 4(b) shows the case where the amplitude of the amplitude modulation signal 14 is increased, and the alignment direction of the liquid crystal molecules is changed to the alignment film as shown in FIG. 5B'.
The liquid crystal molecules 5B near the alignment film 4P are oriented in the direction perpendicular to the surface (x-axis direction). However, the alignment retention force of the alignment film 4P is strong, and the liquid crystal molecules 5B near the alignment film 4P are not oriented in the normal direction sufficiently. Therefore, if the TM mode guided light 8 propagates in the z-axis or y-axis direction, the refractive index of the liquid crystal 5 for the guided light is close to the refractive index nE for extraordinary light near the transparent conductive thin film 6, and close to the refractive index nO for ordinary light near the alignment film surface. Therefore, in the normal direction (x-axis direction),
The refractive index of the liquid crystal 5 along the y-axis shows a distribution of 18b. In this case, if the width of the evanescent light that the guided light leaks out of the waveguide layer into the liquid crystal is tb , then tb > ta . On the other hand, if the guided light 8 in the TE mode propagates in the y-axis direction, the refractive index of the liquid crystal 5 for the guided light is
The refractive index of the liquid crystal 5 along the normal direction (x-axis direction) is close to the refractive index nO for ordinary light near the transparent conductive thin film 6, and close to the refractive index nE for extraordinary light near the surface of the alignment film. Therefore, the refractive index of the liquid crystal 5 along the normal direction (x-axis direction) shows a distribution of 18b'. In this case, the width of the evanescent light that leaks from the waveguide layer into the liquid crystal is defined as tb '.
Then, t b '<t a '.
第4図(c)は更に振幅変調信号14の振幅を大きくした
場合であり、屈折率分布18b,18b′はそれぞれ18c,18c′
に、エバネッセント光の幅tb、tb′はそれぞれtc、tc′
に収束し、tc>tb、tc′<tb′を満たす。FIG. 4(c) shows the case where the amplitude of the amplitude modulation signal 14 is further increased, and the refractive index distributions 18b and 18b' are 18c and 18c', respectively.
The widths of the evanescent light, t b and t b ′, are t c and t c ′, respectively.
and satisfies t c > t b and t c ′ < t b ′.
したがって、TEモードの導波光8がy軸方向に伝搬する
場合、振幅変調信号振幅vと等価導波層厚Teffの関係は
第5図(a)の通りである。すなわち、振幅変調信号14
の振幅vが小さい時(v<v0)、膜厚Teffはt0+tF+
ta′に等しい。反対に振幅vがv1を越えるとTeff=t0+
tF+tc′である。v0<v<v1の時は振幅vの増大と共に
Teffは単調に減少する。従って、振幅vをvAを中心に波
形14のごとく変動させるとTeffはt0+tF+tb′を中心に
変動する波形15となる。Therefore, when the TE mode guided light 8 propagates in the y-axis direction, the relationship between the amplitude modulated signal amplitude v and the equivalent waveguide layer thickness Teff is as shown in Figure 5(a).
When the amplitude v is small (v<v 0 ), the film thickness Teff is t 0 + t F +
Conversely , when the amplitude v exceeds v1 , Teff = t0 +
t F + t c '. When v 0 < v < v 1 , as the amplitude v increases,
Therefore, when the amplitude v is varied around vA as shown by waveform 14, Teff becomes waveform 15 which varies around t0 + tF + tb '.
第5図(b)は等価導波層厚Teffと等価屈折率Nの関係
を示し、等価屈折率Nは膜厚Teffの増大に伴い屈折率nO
(透明層3の屈折率nBがnOより大きい場合にはnB)から
導波層の屈折率nFまで単調増加する曲線16となる。前述
のごとく幅Teffがt0+tF+tb′を中心に変動する波形15
を示せば、等価屈折率NはNAを中心に変動する波形17を
示す。FIG. 5(b) shows the relationship between the equivalent waveguide layer thickness Teff and the equivalent refractive index N. The equivalent refractive index N increases with the increase in the film thickness Teff .
The curve 16 monotonically increases from n B (when the refractive index n B of the transparent layer 3 is larger than n O ) to the refractive index n F of the waveguide layer. As described above, the waveform 15 whose width Teff fluctuates around t 0 + t F + t b ′ is
, the equivalent refractive index N shows a waveform 17 that fluctuates around N A.
式(1)で示したように、等価屈折率Nの変動は回折角
θの変動として現れるので、Teffの変化により放射光の
回折角が変わる、すなわち振幅変調信号の振幅vを変動
させることで放射光の回折角が変わることになる。振幅
変調信号の振幅vの変動に伴う等価屈折率Nの変動幅は
(nF−nO)×(0.1〜0.3)程度期待でき、仮に0.1の変
動幅が得られたとして回折角θは回折角の変動中心をθ
=45度として約10度程度の偏向が可能である。また配向
保持力の強い導波層表面近傍の液晶の配向方向変化を利
用するので、偏向の応答性も速い。As shown in formula (1), a change in the equivalent refractive index N appears as a change in the diffraction angle θ, so a change in Teff changes the diffraction angle of the emitted light, i.e., changing the amplitude v of the amplitude modulation signal changes the diffraction angle of the emitted light. The expected variation range of the equivalent refractive index N due to a change in the amplitude v of the amplitude modulation signal is about ( nF - nO ) x (0.1 to 0.3). If a variation range of 0.1 is obtained, the diffraction angle θ will have a center of variation of the diffraction angle of θ.
= 45 degrees, a deflection of about 10 degrees is possible. In addition, since it utilizes the change in the alignment direction of the liquid crystal near the surface of the waveguide layer, which has a strong alignment retention force, the response of the deflection is also fast.
なお、第5図はTEモードの導波光が配向方向に直交する
方向(y軸方向)に伝搬する場合を例にとって説明した
が、TMモードの導波光8が配向方向(z軸方向)または
それに直交する方向(y軸方向)に伝搬する場合も同様
で、振幅変調信号14の振幅v<v0の時Teff=t0+tF+
ta、振幅vがv1を越えるとTeff=t0+tF+to、v0<v<
v1の時は振幅vの増大と共にTeffは単調に増大し、振幅
vをvAを中心に波形14のごとく変動させるとTeffは波形
15と同様にt0+tF+tbを中心に変動する波形を描く。す
なわち振幅変調信号の制御により放射光の偏向が同様に
して実現できる。Although FIG. 5 has been described taking as an example the case where the guided light of TE mode propagates in the direction perpendicular to the orientation direction (y-axis direction), the same applies when the guided light 8 of TM mode propagates in the orientation direction (z-axis direction) or in the direction perpendicular thereto (y-axis direction). When the amplitude v of the amplitude modulation signal 14 is less than v0 , Teff= t0 + tF +
t a , when the amplitude v exceeds v 1 , Teff = t 0 + t F + t o , v 0 < v <
When v is 1 , Teff increases monotonically as the amplitude v increases. When the amplitude v is varied around v A as shown in waveform 14, Teff increases as shown in waveform 14.
Similar to 15, the waveform fluctuates around t 0 +t F +t b . In other words, deflection of the synchrotron radiation can be achieved in the same way by controlling the amplitude modulation signal.
なお、一般にエバネッセント光量の導波光量に対する割
合が大きいほど等価屈折率の変動の度合も大きくなるの
で、nO>nBであれば導波光の等価屈折率が変わりやす
く、特に等価屈折率の変動が最も効果的なのはnE>nFの
時である。Generally, the greater the ratio of the amount of evanescent light to the amount of guided light, the greater the degree of fluctuation in the equivalent refractive index. Therefore, if n O > n B , the equivalent refractive index of the guided light is likely to change, and the fluctuation in the equivalent refractive index is most effective when n E > n F.
第6図は液晶の屈折率異方性による導波光及び放射光の
偏向影響を示す説明図である。第6図(a)において8G
は導波光の光線の動きを示し、8Eに示す様に光波は液晶
内に侵み出す。また放射光9は一般に液晶内を斜めに横
切る光線である。第6図(b)において5D、5E、5Gは共
に液晶の屈折率異方性を示す屈折率楕円体であり、それ
ぞれ第4図5A、5B′、5Bに相当し、長さnEの長軸と、長
軸に直交する2つの短軸(長さnO)によって表され、長
軸はxz平面内にある。導波光がz方向に進むTEモード光
であればその電界ベクトルはy軸方向(紙面に垂直)に
あり、TMモード光であればその電界ベクトルはx軸方向
にある。また導波光がy軸方向に進むTMモード光であれ
ばその電界ベクトルはz方向、TMモード光であればその
電界ベクトルはx方向にある。一般に屈折率異方性の媒
質内を伝搬することで直線偏光の光が受ける偏光影響は
光の伝搬方向に直交する平面で屈折率楕円体を切った楕
円形状の切口と直線偏光の振動面の位置関係で決まる。
すなわち振動面と切口楕円の長軸が平行、または直交の
関係にあれば光は偏光影響を受けず直線偏光のままであ
るが、平行、直交関係からずれると楕円偏向となる。従
って屈折率楕円体が5Dの場合、z軸方向またはy軸方向
に伝搬するTMモード、z軸方向に伝搬するTEモードの導
波光の振動面は切口楕円の長軸と直交するので、それら
のエバネッセント光(液晶内に侵み出す光波8E)の直線
偏光性は維持され、y軸方向に伝搬するTEモードの導波
光の振動面は切口楕円の長軸と平行で、そのエバネッセ
ント光の直線偏光性も維持される。従って液晶層を通過
して導波層に戻ってくるエバネッセント光はもとのモー
ドのままであり、液晶による偏光影響はない。同様に、
z軸方向またはy軸方向に伝搬するTMモード、z軸方向
に伝搬するTEモードの導波光からの放射光9の直線偏光
性は維持され、y軸方向に伝搬するTEモードの導波光か
らの放射光の直線偏光性も維持される。FIG. 6 is an explanatory diagram showing the influence of the refractive index anisotropy of the liquid crystal on the deflection of the guided light and the emitted light.
indicates the movement of the guided light beam, and as shown in 8E, the light wave penetrates into the liquid crystal. Furthermore, the emitted light 9 is generally a beam of light that crosses the liquid crystal at an angle. In Figure 6(b), 5D, 5E, and 5G are all index ellipsoids that represent the refractive index anisotropy of the liquid crystal. These correspond to 5A, 5B', and 5B in Figure 4, respectively. They are represented by a major axis of length nE and two minor axes (length nO ) perpendicular to the major axis, with the major axes lying in the xz plane. If the guided light is TE mode light traveling in the z direction, its electric field vector is in the y axis (perpendicular to the paper), while if it is TM mode light, its electric field vector is in the x axis. If the guided light is TM mode light traveling in the y axis, its electric field vector is in the z direction, and if it is TM mode light, its electric field vector is in the x direction. Generally, the polarization effect on linearly polarized light propagating through a medium with refractive index anisotropy is determined by the relative positions of the elliptical cut of the index ellipsoid along a plane perpendicular to the light propagation direction and the plane of vibration of the linearly polarized light.
In other words, if the vibration plane and the major axis of the cut ellipse are parallel or perpendicular to each other, the light remains linearly polarized without being affected by polarization, but if they are not parallel or perpendicular, it becomes elliptically polarized. Therefore, when the refractive index ellipsoid is 5D, the vibration plane of the guided light of the TM mode propagating in the z-axis or y-axis direction and the TE mode propagating in the z-axis direction is perpendicular to the major axis of the cut ellipse, so the linear polarization of their evanescent light (light wave 8E leaking into the liquid crystal) is maintained, and the vibration plane of the guided light of the TE mode propagating in the y-axis direction is parallel to the major axis of the cut ellipse, so the linear polarization of the evanescent light is also maintained. Therefore, the evanescent light that passes through the liquid crystal layer and returns to the waveguide layer remains in its original mode, and there is no polarization effect from the liquid crystal. Similarly,
The linear polarization of the radiated light 9 from the guided light of the TM mode propagating in the z-axis or y-axis direction and the TE mode propagating in the z-axis direction is maintained, and the linear polarization of the radiated light from the guided light of the TE mode propagating in the y-axis direction is also maintained.
これに対し屈折率楕円体が5Gに示すようにxz平面内でz
軸に対し傾きを持つの場合、z軸方向に伝搬する導波光
のエバネッセント波はTE、TMモードに拘らず直線偏光性
が維持されるが、y軸方向に伝搬するエバネッセント波
はTE、TMモードとも偏光影響を受けて楕円偏光となり、
導波層内に戻ってともにTEモード成分とTMモード成分と
に分離する。同様に、z軸方向に伝搬する導波光からの
放射光は、TE、TMモードに拘らず直線偏光性が維持され
るが、y軸方向に伝搬する導波光に対する放射光はTE、
TMモードとも偏光影響を受けて一般に楕円偏光となる。In contrast, the refractive index ellipsoid is z in the xz plane as shown in 5G.
When the waveguide is tilted relative to the axis, the evanescent wave of the guided light propagating in the z-axis direction maintains linear polarization regardless of whether it is in TE or TM mode, but the evanescent wave propagating in the y-axis direction is affected by polarization and becomes elliptically polarized in both TE and TM modes.
Similarly, the emitted light from the guided light propagating along the z-axis maintains linear polarization regardless of whether it is in TE or TM mode, but the emitted light from the guided light propagating along the y-axis maintains linear polarization regardless of whether it is in TE or TM mode.
Both the TM and TM modes are affected by polarization and generally become elliptically polarized.
従って屈折率楕円体がz軸に対し傾きを持ち導波光がy
軸方向に伝搬する場合は、導波光がTEとTMにモード分離
し、かつそれぞれの導波光から回折角の異なった楕円偏
光の光が放射される。第5図(a)の説明で行ったよう
にTEモードではv0<v<v1で振幅vの増大と共にTeffは
単調減少するのに対し、TMモードでは単調増加する。す
なわち同じ印加信号に対しTEとTMとでTeff変動の極性が
異なり、放射光の偏向方向も逆方向である。よって導波
光がTE、TMに分離する場合、放射角の近接した2つの放
射光が発生し、電圧信号の印加によるそれらの放射光の
偏光方向が互いに逆方向となるので偏光素子としては好
ましくなく、導波方向は配向方向(z軸方向)にある方
がよい。なお、z軸方向に伝搬するTEモードの導波光に
対する液晶の屈折率はxz平面内で液晶の配向方向が変わ
ってもnoのままであり、放射光を偏向させることはでき
ないので、導波光はTMモードでなければならない。Therefore, the refractive index ellipsoid is tilted with respect to the z axis, and the guided light is
When propagating along the axis, the guided light splits into TE and TM modes, and each of these modes emits elliptically polarized light with different diffraction angles. As explained in Figure 5(a), in the TE mode, Teff decreases monotonically with increasing amplitude v, where v0 <v< v1 , whereas in the TM mode, it increases monotonically. That is, for the same applied signal, the polarity of Teff fluctuations in the TE and TM modes is different, and the polarization directions of the emitted light are also opposite. Therefore, when the guided light splits into TE and TM modes, two emitted lights with similar radiation angles are generated, and the polarization directions of these emitted lights are opposite to each other when a voltage signal is applied. This is undesirable as a polarizer, and the guided light should be aligned along the orientation direction (z-axis). Note that the refractive index of the liquid crystal for TE mode guided light propagating along the z-axis remains n o even when the orientation direction of the liquid crystal changes in the xz plane, and therefore the emitted light cannot be polarized; therefore, the guided light must be in TM mode.
第7図は本発明の第2実施例における光偏向素子の断面
構成図を示す。凹凸のグレーティング1Gが基板1上形成
されており、その上に導電性薄膜2、透明層3を挟んで
透明層3よりも高屈折率の導波層4が形成されている。
透明基板7の表面にはITO等の透明導電性薄膜6が形成
され、液晶5を挟んで導波層4と密着されている。導電
性薄膜2、透明層3および導波層4を合わせてもその膜
厚は薄いので導波層4の表面には凹凸のグレーティング
4Gが残り、これが導波層中の導波光8を放射させると共
に液晶中の液晶分子を配向させる働きを持つ。この場
合、導波方向が配向方向と直交する方向に伝搬する場合
に相当するので導波光のモード分離、放射光の偏光影響
などの問題が存在するが、導波光の放射手段であるグレ
ーティング4Gを液晶の配向手段と兼用できるためポリイ
ミド等の配向手段がいらず、構成が簡単になる。なお、
第2実施例において凹凸のグレーティングの位置は導電
性薄膜2、透明層3の表面等の上にあってもよい。7 shows a cross-sectional view of the optical deflector element according to the second embodiment of the present invention. A concave-convex grating 1G is formed on a substrate 1, and a conductive thin film 2 and a transparent layer 3 are formed on top of it, with a waveguide layer 4 having a higher refractive index than the transparent layer 3 sandwiched therebetween.
A transparent conductive thin film 6 such as ITO is formed on the surface of the transparent substrate 7, and is in close contact with the waveguide layer 4 with the liquid crystal 5 sandwiched between them. Since the combined thickness of the conductive thin film 2, transparent layer 3, and waveguide layer 4 is thin, the surface of the waveguide layer 4 has a concave-convex grating.
The grating 4G remains, which radiates the guided light 8 in the waveguide layer and also functions to align the liquid crystal molecules in the liquid crystal. In this case, since the guided direction corresponds to the case where the light propagates in a direction perpendicular to the alignment direction, problems such as mode separation of the guided light and the polarization effect of the radiated light occur, but since the grating 4G, which is the radiation means for the guided light, can also be used as the alignment means for the liquid crystal, no alignment means such as polyimide is required, and the configuration is simplified.
In the second embodiment, the uneven grating may be located on the surface of the conductive thin film 2, the transparent layer 3, or the like.
第8図は本発明の第3実施例における光偏向素子の説明
図を示す。その断面構成図は第1実施例と同じであり、
第1実施例におけるグレーティング3Gが点Oを中心とし
た同心円状をなしており、導波光8をグレーティング3G
に直交して伝搬させ、グレーティングピッチを変調させ
て形成することで導波層からの放射光を導波層外の集光
点Fに集光させれば、導電性薄膜2と透明導電性薄膜6
との間に加えられる電圧信号により引き起こされる放射
光の偏向は直線OFに沿った集光点Fの変位として作用す
る。FIG. 8 is an explanatory diagram of an optical deflector element according to a third embodiment of the present invention. The cross-sectional configuration is the same as that of the first embodiment.
The grating 3G in the first embodiment is concentric with the point O as the center, and the guided light 8 is guided through the grating 3G
By modulating the grating pitch and forming the waveguide layer, the light emitted from the waveguide layer is focused at a focusing point F outside the waveguide layer.
The deflection of the emitted light caused by a voltage signal applied between acts as a displacement of the focal point F along a line OF.
第9図は第3実施例において導波光8を同心円のグレー
ティング3Gに直交して伝搬させるための一実施例であ
る。半導体レーザー19からの出射光は集光レンズ20によ
って平行光となり1/4波長板21を経て円偏光の光22とな
る。基板1上には導電性薄膜2、透明層3を挟んで透明
層3よりも高屈折率の導波層4が形成されている。導波
層表面にはフォトレジスト等によって凹凸の同心円状グ
レーティング23が形成されており、円偏光の光22はこの
同心円状のグレーティングカプラ23によって導波層4内
に入力結合され、放射方向に伝搬する導波光8となる。9 shows an example of the third embodiment for propagating guided light 8 perpendicular to the concentric grating 3G. Light emitted from a semiconductor laser 19 is collimated by a condenser lens 20 and passes through a quarter-wave plate 21 to become circularly polarized light 22. A conductive thin film 2 and a transparent layer 3 are sandwiched between them on a substrate 1, and a waveguide layer 4 having a higher refractive index than the transparent layer 3 is formed thereon. A concentric grating 23 with a concave-convex shape is formed on the surface of the waveguide layer using photoresist or the like, and the circularly polarized light 22 is input-coupled into the waveguide layer 4 by this concentric grating coupler 23, becoming guided light 8 propagating in the radial direction.
第10図は本発明の第4実施例における光偏向素子の説明
図を示す。第三実施例と同様に、グレーティング3Gが点
Oを中心とした同心円状をなしており、導波光8をグレ
ーティング3Gに直交して伝搬させ、導波層からの放射光
を導波層外の集光点Fに集光させている。導電性薄膜2
または透明導電性薄膜6は放射方向(径方向)に沿った
直線で例えば24A,24B,24C,24D等の多数の領域に分割さ
れており、それぞれの領域に電圧信号を独立して加える
ことができる。このそれぞれの領域に加えられる電圧信
号の大きさをグレーティング表面3Gを底面とした中空円
柱を用いて表すと、中空円柱を平面で切った切口25の円
周上の点の、グレーティング表面3Gに対する高さ(例え
ば点26A、26Bを底面3Gへの垂線の足として、点25Aと26A
の距離、25Bと26Bの距離)をその円周上の点に対応する
分割領域に加わる振幅変調信号の振幅vとする。点25
A、25Bを結ぶ線は切口25の中心を通り切口平面25と底面
3Gとの交点に直交する。切口25が底3Gと非平行の場合に
は、集光点は点25A、25Bおよび26A、26Bを含む平面内で
点Fから点F′へと移動する。すなわち切口の高さは集
光点の光軸OF方向における変位に関係するが、切口の傾
斜の度合は集光点の光軸直交方向の変位に関係する。よ
って第3実施例で集光点を直線OFに沿ってしか変位でき
なかったものが、24A,24B,24C,24D等の多数の領域に電
圧信号を独立して加えることで、任意の位置への変位が
可能となる。なお、導電性薄膜2または透明導電性薄膜
6の分割方法はその他にも考えられ、必ずしも放射方向
(径方向)に沿った直線で分割する必要はない。10 is an explanatory diagram of an optical deflector element according to a fourth embodiment of the present invention. As in the third embodiment, the grating 3G is concentrically arranged with the point O as the center, and the guided light 8 propagates perpendicular to the grating 3G, and the light emitted from the waveguide layer is focused at a focusing point F outside the waveguide layer.
Alternatively, the transparent conductive thin film 6 is divided into a number of regions, such as 24A, 24B, 24C, and 24D, by straight lines along the radial direction (diameter direction), and a voltage signal can be applied to each region independently. The magnitude of the voltage signal applied to each region can be expressed using a hollow cylinder with the grating surface 3G as its bottom surface. The height of a point on the circumference of a cut 25 of the hollow cylinder cut by a plane relative to the grating surface 3G (for example, the heights of points 25A and 26B, which are the feet of a perpendicular to the bottom surface 3G, are expressed as follows:
The distance between 25B and 26B (the distance between 25B and 26B) is the amplitude v of the amplitude modulation signal applied to the divided area corresponding to the point on the circumference.
The line connecting A and 25B passes through the center of the cut 25 and the cut plane 25 and the bottom
3G. When the cut edge 25 is not parallel to the base 3G, the focal point moves from point F to point F' in the plane including points 25A, 25B, 26A, and 26B. That is, the height of the cut edge is related to the displacement of the focal point along the optical axis OF, while the inclination of the cut edge is related to the displacement of the focal point in the direction perpendicular to the optical axis OF. Thus, while the focal point in the third embodiment could only be displaced along the straight line OF, it can now be displaced to any position by independently applying voltage signals to multiple regions such as 24A, 24B, 24C, and 24D. Note that other methods of dividing the conductive thin film 2 or the transparent conductive thin film 6 are possible, and dividing along straight lines along the radial direction is not necessarily required.
産業上の利用可能性
以上説明したように、本発明の光偏向素子により、導電
性薄膜と透明導電性薄膜との間に加えられる電圧信号に
より導波層表面近傍における液晶の配向方向が変わり、
導波光に対する液晶の屈折率が変わって導波光の等価屈
折率が変わり、導波層からの放射光の回折角が変わるの
で放射光の偏向素子として機能し、その偏光幅は大き
い。また配向保持力の強い導波層表面近傍の液晶の配向
方向変化を利用するので、偏光の応答性は速い。更に、
導波光は液晶側と基板側とにその全てが放射され、基板
側への放射光は基板表面の導電性薄膜を反射し液晶側の
放射光に重なるので液晶側の放射光量は大きくなり、偏
向される光のエネルギーの利用効率は高い。一方、周期
構造を同心円状とし導波光を周期構造に直交して伝搬さ
せ、導波層からの放射光を導波層外の集光点に集光させ
れば、導電性薄膜と透明導電性薄膜との間に加えられる
電圧信号により引き起こされる放射光の偏向を集光点の
変位として作用させることができる。特に導電性薄膜ま
たは透明導電性薄膜を多数の領域に分割し電圧信号を独
立して加えることで、集光点を任意の位置へ変位させる
ことが可能となる。以上の効果により、本発明は新規な
偏向素子、可変焦点素子として実用的に極めて有効であ
る。INDUSTRIAL APPLICABILITY As described above, in the optical deflection element of the present invention, the orientation direction of the liquid crystal in the vicinity of the surface of the waveguide layer is changed by a voltage signal applied between the conductive thin film and the transparent conductive thin film,
The refractive index of the liquid crystal for the guided light changes, changing the equivalent refractive index of the guided light, and the diffraction angle of the light emitted from the waveguide layer, so it functions as a deflector for the emitted light, and the polarization width is large. In addition, since it utilizes the change in the orientation direction of the liquid crystal near the surface of the waveguide layer, which has a strong orientation retention force, the response of the polarization is fast. Furthermore,
All of the guided light is emitted toward the liquid crystal and substrate sides. The light radiated toward the substrate side is reflected by the conductive thin film on the substrate surface and overlaps with the light radiated toward the liquid crystal side, increasing the amount of light radiated toward the liquid crystal side and improving the efficiency of energy utilization of the deflected light. On the other hand, if the periodic structure is concentric, the guided light propagates perpendicular to the periodic structure, and the light radiated from the waveguide layer is focused at a focusing point outside the waveguide layer, the deflection of the radiated light caused by a voltage signal applied between the conductive thin film and the transparent conductive thin film can be used to displace the focusing point. In particular, by dividing the conductive thin film or transparent conductive thin film into multiple regions and applying voltage signals independently, it is possible to displace the focusing point to any desired position. Due to these effects, the present invention is extremely useful in practical applications as a novel deflection element and variable-focus element.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 麻田 潤一 大阪府茨木市南春日丘6丁目9番39号 ──────────────────────────────────────────────────── Continued from the front page (72) Inventor: Junichi Asada 6-9-39 Minami-Kasugaoka, Ibaraki City, Osaka Prefecture
Claims (10)
薄膜上に直接もしくは透明層を挟んで導波光を伝搬する
導波層を形成し、前記導波層上に液晶を挟んで表面に透
明導電性薄膜の形成された透明基板を密着させ、前記導
波層には導波光の伝搬方向に沿って周期構造が形成され
ており、この周期構造により前記導波光が放射されて放
射光となり、前記導波層に前記液晶を配向する手段を構
成し、前記導電性薄膜と透明導電性薄膜との間に電圧信
号を加えることで前記放射光の方向を変えることを特徴
とする光偏向素子。[Claim 1] An optical deflection element comprising: a conductive thin film formed on a substrate; a waveguide layer for propagating guided light formed on said conductive thin film either directly or via a transparent layer; a transparent substrate having a transparent conductive thin film formed on its surface and a liquid crystal sandwiched between them being tightly attached to said waveguide layer; a periodic structure formed in said waveguide layer along the propagation direction of the guided light; said periodic structure causing said guided light to be radiated as radiated light; a means for orienting said liquid crystal in said waveguide layer; and a voltage signal applied between said conductive thin film and said transparent conductive thin film to change the direction of the radiated light.
薄膜上に直接もしくは透明層を挟んで導波光を伝搬する
導波層を形成し、前記導波層上に液晶を挟んで表面に透
明導電性薄膜の形成された透明基板を密着させ、前記導
波層には導波光の伝搬方向に沿って周期構造が形成され
ており、この周期構造により前記導波光が放射されて放
射光となり、前記周期構造を導波層の表面の凹凸溝と
し、この周期溝を配向手段として前記液晶を配向し、前
記導電性薄膜と透明導電性薄膜との間に電圧信号を加え
ることで前記放射光の方向を変えることを特徴とする光
偏向素子。[Claim 2] An optical deflection element comprising: a conductive thin film formed on a substrate; a waveguide layer for propagating guided light formed on said conductive thin film either directly or via a transparent layer; a transparent substrate having a transparent conductive thin film formed on its surface and a liquid crystal sandwiched between them is tightly attached to said waveguide layer; a periodic structure is formed in said waveguide layer along the propagation direction of the guided light, and said guided light is radiated as radiated light by this periodic structure; said periodic structure is formed as uneven grooves on the surface of the waveguide layer; said periodic grooves serve as an orientation means for orienting the liquid crystal; and a direction of the radiated light is changed by applying a voltage signal between said conductive thin film and said transparent conductive thin film.
対する屈折率よりも大きいことを特徴とする請求項1ま
たは2に記載の光偏向素子。3. The optical deflection element according to claim 1, wherein the refractive index of said conductive layer is greater than the refractive index of said liquid crystal for ordinary light.
明層の屈折率よりも大きいことを特徴とする請求項1、
2または3に記載の光偏向素子。4. The liquid crystal according to claim 1, wherein the refractive index of said liquid crystal for ordinary light is greater than the refractive index of said transparent layer.
4. The optical deflection element according to claim 2 or 3.
徴とする請求項1〜4のいずれかに記載の光偏向素子。5. The optical deflection element according to claim 1, wherein the voltage signal is an amplitude-modulated wave.
導波光の伝搬方向と平行または直交することを特徴とす
る請求項1〜5のいずれかに記載の光偏向素子。6. The optical deflection element according to claim 1, wherein the direction of alignment of said liquid crystal by said alignment means is parallel or perpendicular to the propagation direction of said guided light.
導波光の伝搬方向と平行の場合には前記導波光がTMモー
ドであることを特徴とする請求項6に記載の光偏向素
子。7. The optical deflection element according to claim 6, wherein said guided light is in TM mode when the alignment direction of said liquid crystal by said alignment means is parallel to the propagation direction of said guided light.
状とし、前記導波光は前記周期構造に直交して伝搬し、
前記導波層からの放射光を導波層外の一つもしくはいく
つかの集光点に集光させ、前記電圧信号により前記集光
点の位置を変えることを特徴とする請求項1〜7のいず
れかに記載の光偏向素子。8. The optical waveguide according to claim 7, wherein the periodic structure is a concentric circular or spiral structure, and the guided light propagates perpendicular to the periodic structure.
8. The optical deflector according to claim 1, wherein the light emitted from said waveguide layer is focused at one or more focusing points outside said waveguide layer, and the positions of said focusing points are changed by said voltage signal.
くの領域に分割し、前記各分割領域に電圧信号を独立し
て加えることで前記集光点の位置を変えることを特徴と
する請求項8に記載の光偏向素子。[Claim 9] An optical deflection element as described in claim 8, characterized in that the conductive thin film or transparent conductive thin film is divided into many regions and the position of the focusing point is changed by independently applying a voltage signal to each divided region.
分割線によって区切られる扇形状とすることを特徴とす
る請求項9に記載の光偏向素子。10. The optical deflection element according to claim 9, wherein the divided regions are sector-shaped and are partitioned by dividing lines along the propagation direction of the guided light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1-508308A JPH0748096B2 (en) | 1988-08-05 | 1989-08-02 | light deflection element |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19658488 | 1988-08-05 | ||
| JP63-196584 | 1988-08-05 | ||
| JP10934789 | 1989-04-28 | ||
| JP1-109347 | 1989-04-28 | ||
| JP1-508308A JPH0748096B2 (en) | 1988-08-05 | 1989-08-02 | light deflection element |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO1990001722A1 JPWO1990001722A1 (en) | 1990-09-06 |
| JPH0748096B2 true JPH0748096B2 (en) | 1995-05-24 |
| JPH0748096B1 JPH0748096B1 (en) | 1995-05-24 |
Family
ID=27311448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1-508308A Expired - Lifetime JPH0748096B2 (en) | 1988-08-05 | 1989-08-02 | light deflection element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0748096B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005064365A1 (en) * | 2003-12-24 | 2005-07-14 | Pirelli & C. S.P.A. | Tunable resonant grating filters |
| JP7145436B2 (en) * | 2017-12-27 | 2022-10-03 | パナソニックIpマネジメント株式会社 | optical device |
| JP7373768B2 (en) * | 2018-03-27 | 2023-11-06 | パナソニックIpマネジメント株式会社 | Optical devices and optical detection systems |
-
1989
- 1989-08-02 JP JP1-508308A patent/JPH0748096B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0748096B1 (en) | 1995-05-24 |
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