JPH0751748B2 - Thin film generation method - Google Patents
Thin film generation methodInfo
- Publication number
- JPH0751748B2 JPH0751748B2 JP60228043A JP22804385A JPH0751748B2 JP H0751748 B2 JPH0751748 B2 JP H0751748B2 JP 60228043 A JP60228043 A JP 60228043A JP 22804385 A JP22804385 A JP 22804385A JP H0751748 B2 JPH0751748 B2 JP H0751748B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- temperature
- heating
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims description 66
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 229910000889 permalloy Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000003852 thin film production method Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体分野における気相成長法により薄膜を基
板上に生成する薄膜生成方法に関するものである。TECHNICAL FIELD The present invention relates to a thin film forming method for forming a thin film on a substrate by a vapor phase growth method in the semiconductor field.
従来の技術 従来、薄膜を作製する技術としては真空蒸着法、スパッ
タ法等が用いられているが、いずれの方式においても生
成した膜の結晶性や残留応力等、材料物性あるいは基板
との密着強度を高めるなど生成膜の改質を目的として基
板に薄膜を生成する際、基板を加熱する手法が一般に用
いられている。Conventional technology Conventionally, vacuum evaporation method, sputtering method, etc. have been used as a technology for forming a thin film, but in any method, the crystallinity and residual stress of the generated film, the physical properties of the material, or the adhesion strength with the substrate. A method of heating the substrate is generally used when a thin film is formed on the substrate for the purpose of modifying the formed film such as increasing the temperature.
従来より用いられている基板の加熱方式としては、基板
や基板を保持する治具の裏側に直接ヒーターを接触させ
て加熱する伝導方式と、基板の上側または下側より赤外
線ヒーター等を用いた輻射方式が主なものであり、後者
では基板のどちらか一方側より加熱する方式が用いられ
てきた。Conventionally used heating methods for substrates include a conduction method in which a heater is directly brought into contact with the back side of a substrate or a jig for holding the substrate, and a radiation method using an infrared heater or the like from above or below the substrate. The method is mainly used, and in the latter method, heating is performed from either side of the substrate.
第８図に基板の薄膜生成面側を赤外線ランプで加熱する
方式を用いた場合の薄膜生成状態を示す。１は薄膜生成
基板であり、２は基板下方より輻射加熱を行う赤外線ヒ
ーター、３は生成薄膜である。第８図ａは常温状態の基
板であり、これを加熱すると第８図ｂのように基板の熱
源側に熱膨張による応力が加わるが、反対側はさ程温度
が上昇せず基板全体としては上向きにそった形となり、
この状態で薄膜を生成することとなる。FIG. 8 shows a thin film formation state when a method of heating the thin film formation surface side of the substrate with an infrared lamp is used. Reference numeral 1 is a thin film generation substrate, 2 is an infrared heater for performing radiant heating from below the substrate, and 3 is a generation thin film. FIG. 8a shows a substrate in a room temperature state. When this is heated, stress due to thermal expansion is applied to the heat source side of the substrate as shown in FIG. 8b, but the temperature does not rise so much on the opposite side and the substrate as a whole does not. The shape follows upward,
A thin film is produced in this state.
発明が解決しようとする問題点 しかしながら上記のような構成では、基板加熱により第
９図に示すように基板の表面と裏面とでは著しい温度差
を生じる。この状態での基板、すなわち第８図ｂのよう
な従来例における上向きにそった状態の基板に薄膜を生
成した場合、薄膜生成後基板温度の低下とともに基板の
部分的な膨張差が少なくなる。その時、生成薄膜は基板
から引張あるいは圧縮応力を受け、これによって膜の特
性、特に応力や歪の影響を受け易い物性は特性の劣化や
変動等を生じるという問題点を有していた。Problems to be Solved by the Invention However, in the above-described structure, heating of the substrate causes a significant temperature difference between the front surface and the back surface of the substrate as shown in FIG. When a thin film is formed on the substrate in this state, that is, the substrate in the state of facing upward in the conventional example as shown in FIG. 8b, the difference in partial expansion of the substrate decreases as the substrate temperature decreases after the thin film is formed. At that time, the produced thin film receives a tensile or compressive stress from the substrate, which causes a problem that the properties of the film, particularly physical properties susceptible to stress or strain, deteriorate or fluctuate.
本発明は、上記問題点に鑑み、生成薄膜の基板からの応
力を減じ薄膜の塑性変形を軽減する薄膜生成方法を提供
するものである。In view of the above problems, the present invention provides a thin film production method that reduces the stress of the produced thin film from the substrate and reduces the plastic deformation of the thin film.
問題点を解決するための手段 上記問題点を解決するために本発明の薄膜生成方法は、
基板表裏のいずれか片側に設けた加熱装置により基板の
表裏面を同温度になるよう調整し、基板全体としての歪
を減じた上で薄膜を生成するという構成を備えたもので
ある。Means for Solving the Problems In order to solve the above problems, the thin film forming method of the present invention is
A heating device provided on either one of the front and back sides of the substrate adjusts the front and back surfaces of the substrate to the same temperature to reduce strain in the entire substrate and then forms a thin film.
作 用 本発明は上記した構成によって、すなわち基板の表裏を
同時に薄膜生成温度に保つことで薄膜生成時における基
板のそり、歪を生じることなく薄膜を生成する。従って
常温迄冷却された場合にも、生成薄膜は基板からの応力
を受けることなく歪まず、また塑性変形，特性変化を軽
減することが可能になる。Operation The present invention has the above-described structure, that is, the front surface and the back surface of the substrate are simultaneously maintained at the thin film forming temperature, so that the thin film is formed without causing warpage and distortion of the substrate during thin film formation. Therefore, even when the thin film is cooled to room temperature, the formed thin film does not distort without receiving stress from the substrate, and plastic deformation and characteristic changes can be reduced.
実施例 以下本発明の一実施例、特にその効果を磁気抵抗効果素
子として用いるパーマロイ薄膜を生成する実施例につい
て図面を参照しながら説明する。EXAMPLE One example of the present invention, particularly an example of producing a permalloy thin film using its effect as a magnetoresistive effect element, will be described with reference to the drawings.
第１図は本発明の第１の実施例における薄膜生成方法の
生成過程を示すものである。第１図において、11は基
板、12は基板１の左右上方及び下方に設けられた赤外線
ヒーター、13は生成されたパーマロイ薄膜である。第１
図ａは常温状態での基板であり、この基板の上下に設け
られた１対の赤外線ヒーターの輻射熱により基板表裏が
同温度になるよう赤外線ヒーターのパワーをコントロー
ルする。そのまま、すなわち薄膜生成温度を概ね200℃
に保ち、電子ビーム式蒸着法により作業圧力１×10
-7（Torr）のもとでパーマロイ薄膜を約300（Å）生成
した。FIG. 1 shows the production process of the thin film production method in the first embodiment of the present invention. In FIG. 1, 11 is a substrate, 12 is an infrared heater provided above and below the substrate 1 on the left and right sides, and 13 is a generated permalloy thin film. First
FIG. A shows the substrate at room temperature, and the power of the infrared heater is controlled so that the front and back sides of the substrate have the same temperature by the radiant heat of a pair of infrared heaters provided above and below the substrate. As it is, that is, the thin film formation temperature is about 200 ° C
Maintained at a working pressure of 1 x 10 by electron beam evaporation method
About 300 (Å) permalloy thin film was formed under -7 (Torr).
第２図は本実施例の基板加熱温度コントロールであり、
第３図は基板表裏における昇温特性である。また、T2は
薄膜生成温度である。FIG. 2 shows the substrate heating temperature control of this embodiment,
FIG. 3 shows the temperature rising characteristics on the front and back of the substrate. Further, T 2 is a thin film formation temperature.
第４図は本発明の第２の実施例を示す薄膜生成方法の生
成過程を示したものである。第４図中21は基板、22は基
板21の下方より赤外線を輻射し、輻射熱により基板を加
熱するための赤外線ヒーター、23は生成されたパーマロ
イ薄膜である。第４図ａは常温状態の基板であり、赤外
線ヒーターで基板の下側より加熱を行う。FIG. 4 shows a production process of a thin film production method showing a second embodiment of the present invention. In FIG. 4, reference numeral 21 is a substrate, 22 is an infrared heater for radiating infrared rays from below the substrate 21, and the substrate is heated by radiant heat, and 23 is a permalloy thin film produced. FIG. 4a shows a substrate at room temperature, which is heated from below the substrate with an infrared heater.
その時の赤外線ヒーターの温度コントロールは第５図に
示すように、一担薄膜生成温度以上T1（T1＝約300
（℃））に調整、一時間保持後第４図ｃに示すように薄
膜生成温度T2（T2＝200（℃））に調整する。基板裏面
が充分に加熱され、赤外線ヒーターのパワーが低下する
と基板表面にくらべて裏面は基板材内部を熱が伝導する
時間だけ温度低下が遅くなる。その時の基板温度特性は
第６図に示すように、ほぼ薄膜生成温度付近で交差す
る。この時点で基板表裏面温度が概ね同じとなり、電子
ビーム蒸着法により作業圧力１×10-7（Torr）のもとで
パーマロイ薄膜を約300（Å）生成した。第５図第６図
におけるT1は初期設定温度、T2は薄膜生成温度である。Temperature control of the infrared heater at that time, as shown in FIG. 5, one担薄film formation temperature above T 1 (T 1 = about 300
(° C)), and after holding for 1 hour, the temperature is adjusted to the thin film formation temperature T 2 (T 2 = 200 (° C)) as shown in Fig. 4c. When the back surface of the substrate is sufficiently heated and the power of the infrared heater is reduced, the temperature decrease of the back surface is delayed as compared with the front surface of the substrate by the time when heat is conducted inside the board material. At that time, the substrate temperature characteristics intersect with each other near the thin film formation temperature, as shown in FIG. At this point, the temperatures of the front and back surfaces of the substrate were almost the same, and about 300 (Å) permalloy thin films were formed by the electron beam evaporation method under a working pressure of 1 × 10 -7 (Torr). In FIG. 5 and FIG. 6, T 1 is the initial set temperature and T 2 is the thin film formation temperature.
なお、比較のため従来方法による比較例を以下に示す。For comparison, a comparative example using the conventional method is shown below.
比較例では基板を下側から赤外線ヒーターによる輻射加
熱を行い、基板面の熱源側が熱膨張により応力を受けた
状態となる。すなわち基板表裏面に温度差のあるまま上
向きにそった状態で、約200（℃）に保持後電子ビーム
蒸着法により作業圧力１×10-7（Torr）のもとでパーマ
ロイ薄膜を約300（Å）生成した。In the comparative example, the substrate is radiantly heated from below by an infrared heater, and the heat source side of the substrate surface is in a state of being stressed by thermal expansion. That is, while keeping the temperature difference between the front and back sides of the substrate facing upward, the permalloy thin film was kept at about 200 (° C) by electron beam evaporation under a working pressure of 1 × 10 -7 (Torr) to about 300 ( Å) Generated.
実施例，比較例における条件で作製したパーマロイ薄膜
の磁気抵抗効果を直流磁場中で350℃で40分間アニール
を行った前後の比抵抗の変化率で比較した結果を第７図
に示す。比抵抗の変化率の測定は、60Hzの交番磁界を発
生するヘルムホルツコイルの中に一定形状にパターン化
されたパーマロイ薄膜を設置し、測定は四端子法により
定電流を流した時の抵抗変化から、、比抵抗を算出しア
ニール前との変化率で比較した。なお本実施例では基板
の加熱に赤外線ヒーターを用いたが、その他の方法、例
えば、誘導加熱などの方法を用いてもよい。FIG. 7 shows the results of comparison of the magnetoresistive effect of the permalloy thin films produced under the conditions of Examples and Comparative Examples with respect to the rate of change in specific resistance before and after annealing at 350 ° C. for 40 minutes in a DC magnetic field. To measure the rate of change of resistivity, a permalloy thin film patterned in a certain shape was installed in a Helmholtz coil that generates an alternating magnetic field of 60 Hz, and the measurement was made from the resistance change when a constant current was applied by the four-terminal method. , And the specific resistance was calculated and compared with the change rate before annealing. Although an infrared heater is used to heat the substrate in this embodiment, other methods such as induction heating may be used.
発明の効果 以上のように本発明は、基板の加熱方式によって生じる
基板表裏の温度差に起因する応力の発生を防止し、基板
上に生成した薄膜の特性を改善しうるものである。本発
明より成る方法によって生成したパーマロイ薄膜を用い
て作製した磁気抵抗効果素子は、従来法により作製した
素子に比べて、後工程での熱ばくろに対する特性の劣化
が少なく電磁変換特性の安定化をはかることができる。EFFECTS OF THE INVENTION As described above, the present invention can prevent the generation of stress due to the temperature difference between the front surface and the back surface of a substrate caused by the heating method of the substrate, and can improve the characteristics of the thin film formed on the substrate. The magnetoresistive effect element manufactured by using the permalloy thin film produced by the method according to the present invention has less deterioration in the characteristics due to the heat exposure in the subsequent process compared with the element manufactured by the conventional method, and the electromagnetic conversion characteristics are stabilized. Can be measured.
第１図は本発明の第１の実施例における薄膜生成過程を
示す工程図、第２図は第１実施例における基板温度コン
トロール過程を示す特性図、第３図は基板表裏面の温度
軌跡を示す特性図、第４図は第２の実施例における薄膜
形成過程を示す工程図、第５図は第２実施例における基
板温度コントロール過程を示す特性図、第６図は第２の
実施例における基板表裏面の温度軌跡を示す特性図、第
７図は本発明の各実施例と従来例の測定結果を示す特性
図、第８図は従来の薄膜生成過程を示す工程図、第９図
は従来例の基板温度コントロールを示す特性図である。 11……基板、12……赤外線ヒーター、13……生成薄膜、
21……基板、22……赤外線ヒーター、23……生成薄膜。FIG. 1 is a process diagram showing a thin film formation process in the first embodiment of the present invention, FIG. 2 is a characteristic diagram showing a substrate temperature control process in the first embodiment, and FIG. 4 is a characteristic diagram showing a thin film forming process in the second embodiment, FIG. 5 is a characteristic diagram showing a substrate temperature control process in the second embodiment, and FIG. 6 is a second embodiment. FIG. 7 is a characteristic diagram showing temperature trajectories on the front and back surfaces of the substrate, FIG. 7 is a characteristic diagram showing measurement results of each embodiment of the present invention and a conventional example, FIG. 8 is a process diagram showing a conventional thin film forming process, and FIG. It is a characteristic view which shows the substrate temperature control of a prior art example. 11 ... Substrate, 12 ... Infrared heater, 13 ... Generated thin film,
21 ... Substrate, 22 ... Infrared heater, 23 ... Generation thin film.
Claims (3)
に薄膜を生成する薄膜成長方法で、上記基板表裏のいず
れか片側に設けた加熱装置により薄膜生成時に基板表裏
の温度を等しく保持することを特徴とする薄膜生成方
法。1. A thin film growth method for forming a thin film on the surface of a substrate whose temperature is raised by a heating device, wherein the heating device provided on either side of the front and back of the substrate keeps the temperatures of the front and back of the substrate equal at the time of forming the thin film. And a method for forming a thin film.
か片側に設けた加熱装置により、基板を薄膜生成温度よ
り高温度に保ち加熱している側の表面温度を薄膜生成温
度以上にあげ、その後薄膜生成時に加熱装置側基板温度
を薄膜生成温度に調整するという基板加熱過程を用いる
ことを特徴とする特許請求の範囲第１項記載の薄膜生成
方法。2. As a method of heating a substrate, the surface temperature of the side where the substrate is heated to a temperature higher than the thin film formation temperature is raised above the thin film formation temperature by a heating device provided on either side of the substrate, The method for producing a thin film according to claim 1, wherein a substrate heating process of adjusting the substrate temperature on the heating device side to the thin film producing temperature is used at the time of producing the thin film.
特許請求の範囲第１項または第２項記載の薄膜生成方
法。3. The method for producing a thin film according to claim 1 or 2, wherein the thin film is permalloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60228043A JPH0751748B2 (en) | 1985-10-14 | 1985-10-14 | Thin film generation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60228043A JPH0751748B2 (en) | 1985-10-14 | 1985-10-14 | Thin film generation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6286157A JPS6286157A (en) | 1987-04-20 |
| JPH0751748B2 true JPH0751748B2 (en) | 1995-06-05 |
Family
ID=16870301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60228043A Expired - Lifetime JPH0751748B2 (en) | 1985-10-14 | 1985-10-14 | Thin film generation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0751748B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2741512B2 (en) * | 1991-11-12 | 1998-04-22 | 富士写真フイルム株式会社 | Method for manufacturing soft magnetic thin film |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5420117B2 (en) * | 1973-09-21 | 1979-07-20 | ||
| JPS57150554A (en) * | 1981-03-13 | 1982-09-17 | Hitachi Ltd | Injection molding with screw and its manufacture |
| JPS5815651U (en) * | 1981-07-20 | 1983-01-31 | 株式会社リコー | Deposit heating device for vacuum evaporation |
| JPS619567A (en) * | 1984-06-22 | 1986-01-17 | Hitachi Ltd | Method for forming film by sputtering |
-
1985
- 1985-10-14 JP JP60228043A patent/JPH0751748B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6286157A (en) | 1987-04-20 |
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|---|---|---|---|
| EXPY | Cancellation because of completion of term |