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JPH0752634B2 - Ion beam device - Google Patents
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JPH0752634B2 - Ion beam device - Google Patents

Ion beam device

Info

Publication number
JPH0752634B2
JPH0752634B2 JP61305642A JP30564286A JPH0752634B2 JP H0752634 B2 JPH0752634 B2 JP H0752634B2 JP 61305642 A JP61305642 A JP 61305642A JP 30564286 A JP30564286 A JP 30564286A JP H0752634 B2 JPH0752634 B2 JP H0752634B2
Authority
JP
Japan
Prior art keywords
electrode
plasma chamber
ground
ground potential
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61305642A
Other languages
Japanese (ja)
Other versions
JPS63158730A (en
Inventor
正保 降矢
祐司 片田
▲靖▼孝 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP61305642A priority Critical patent/JPH0752634B2/en
Publication of JPS63158730A publication Critical patent/JPS63158730A/en
Publication of JPH0752634B2 publication Critical patent/JPH0752634B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体製造行程中に行なわれる資料へのイ
オン注入、イオン描画、試料から二次イオンを放出させ
て質量分析計に導き試料の組成分析を行なうイオンマイ
クロアナライザ、などの機能を有するイオンビーム装置
であつて、室壁に細孔を備えるとともに室内において気
体または金属蒸気がプラズマ化され、かつ接地電位に対
して正電位に課電されるプラズマ室と、板状に形成され
て中央部に細孔を備え、前記プラズマ室の外部に該プラ
ズマ室の細孔と同軸に対向して配され接地電位に対し負
電位に課電されて、前記プラズマ室からイオンを引き出
すイオン引出し電極と、板状に形成されて中央部に細孔
を備え前記イオン引出し電極と同軸にかつ該電極と間隔
をおいて該電極の反プラズマ室側に配されて接地電位に
ある接地電極と、前記プラズマ室、イオン引出し電極お
よび接地電極を囲んで接地電位にある金属製真空容器と
を備えたものに関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is directed to ion implantation into a material performed during a semiconductor manufacturing process, ion drawing, and emission of secondary ions from a sample to be introduced into a mass spectrometer to introduce a sample. An ion beam device having a function such as an ion microanalyzer for performing composition analysis, which has pores in the chamber wall, gas or metal vapor is turned into plasma in the chamber, and a positive potential is applied to the ground potential. A plasma chamber and a plate-shaped hole formed in the center of the plasma chamber. The plasma chamber is arranged outside the plasma chamber so as to face the hole of the plasma chamber coaxially and is charged with a negative potential with respect to the ground potential. And an ion extraction electrode for extracting ions from the plasma chamber, and a plate-shaped electrode having a small hole in the center thereof, coaxial with the ion extraction electrode and spaced apart from the electrode, A ground electrode which is at ground potential disposed in the chamber side, wherein the plasma chamber, to those with a metallic vacuum vessel is at ground potential surrounding the ion extraction electrode and the ground electrode.

〔従来の技術〕[Conventional technology]

第6図に従来のイオンビーム装置の構成例を示し、第7
図にこの装置の要部拡大図を示す。室壁に細孔11を備え
たプラズマ室1に気体または金属蒸気を導入し、適当な
方法たとえばプラズマ室内に収容された、紙面に垂直な
熱陰極線に通電、加熱して熱電子を放出させ、この熱陰
極線よりプラス側に課電されたプラズマ室の室壁へ向か
ら熱電子に対し紙面に垂直方向の磁界をかけて熱電子に
回転運動を起こさせ、導入された気体または金属蒸気の
分子に衝突させてこれを電離することによりプラズマ化
し、このプラズマ中から、中央に細孔21を備えて板状に
形成されたプラズマ室の細孔11と同軸に対向して配され
たイオン引出し電極2とプラズマ室1との間に十数kVな
いし数十kVの直流高電圧を印加してイオン群すなわち種
々の電荷/質量比を有するイオンを引き出す。この引き
出されたイオン群は、イオン引出し電極2の背後に配さ
れた板状の接地電極8の中央部に設けられた細孔81を通
過するイオンビーム3となつて質量分析マグネツト4の
磁極間に形成されている直流磁界中へ入射される。この
入射されたイオンビームを構成するイオン群の中から前
記直流磁界の作用により特定の電荷/質量比を有するイ
オンのみが選択され、質量分析マグネツト4からイオン
ビーム5となつて射出され試料基板6に注入される。な
お、図において7はプラズマ室1、イオン引出し電極
2、接地電極8などを囲む接地された真空容器、9はプ
ラズマ室1に直流高電圧を導入するための絶縁管であ
る。
FIG. 6 shows an example of the configuration of a conventional ion beam device.
An enlarged view of the main part of this device is shown in the figure. Gas or metal vapor is introduced into the plasma chamber 1 having the pores 11 on the chamber wall, and a suitable method, for example, the hot cathode wire which is housed in the plasma chamber and is perpendicular to the paper surface is energized and heated to emit thermoelectrons, A magnetic field perpendicular to the plane of the paper is applied to the thermoelectrons from the direction toward the chamber wall of the plasma chamber, which is charged to the positive side of the hot cathode line, causing the thermoelectrons to make a rotational motion, and the molecules of the introduced gas or metal vapor. Ion extraction electrodes arranged coaxially with the pores 11 of the plate-like plasma chamber having a pore 21 in the center of the plasma, by colliding with and ionizing the plasma. A high direct current voltage of several tens kV to several tens kV is applied between the plasma chamber 2 and the plasma chamber 1 to extract ion groups, that is, ions having various charge / mass ratios. The extracted ion group is connected to the ion beam 3 passing through the pore 81 provided in the central portion of the plate-shaped ground electrode 8 arranged behind the ion extraction electrode 2 to form a gap between the magnetic poles of the mass analysis magnet 4. It is incident on the DC magnetic field formed in. Only ions having a specific charge / mass ratio are selected by the action of the direct-current magnetic field from the group of ions constituting the incident ion beam, and the sample substrate 6 is ejected as the ion beam 5 from the mass analysis magnet 4. Is injected into. In the figure, 7 is a vacuum chamber that is grounded and surrounds the plasma chamber 1, the ion extraction electrode 2, the ground electrode 8 and the like, and 9 is an insulating tube for introducing a high DC voltage into the plasma chamber 1.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

以上のようと構成されたイオンビーム装置における問題
点はつぎの通りである。すなわち、真空容器の中には残
存ガスがあり、イオンビームによつてこの残存ガスが電
離するので電子が発生する。この電子がイオンビームの
中をドリフトし、イオン引出し電極とプラズマ室との間
の電界で加速され、プラズマ室に衝突して損傷を与える
ので、実装置においては、イオン引出し電極に対し接地
電極もしくは真空容器の電位を基準にして数百ボルトの
負極性電位を与え、イオンビームの下流側からプラズマ
室に向かう電子を阻止している。しかしながら、装置を
運転すると、イオンビームを引き出すことによつてプラ
ズマ室と真空容器との間で異常放電が頻発し、またプラ
ズマ室近傍の金属が溶融する。
The problems with the ion beam device configured as described above are as follows. That is, there is residual gas in the vacuum container, and the residual gas is ionized by the ion beam, so that electrons are generated. These electrons drift in the ion beam and are accelerated by the electric field between the ion extraction electrode and the plasma chamber, and collide with and damage the plasma chamber. A negative potential of several hundred volts is applied with reference to the potential of the vacuum container to block electrons from the downstream side of the ion beam toward the plasma chamber. However, when the apparatus is operated, an abnormal discharge frequently occurs between the plasma chamber and the vacuum container due to the extraction of the ion beam, and the metal near the plasma chamber is melted.

この発明は、イオン引出し電極より下流側に発生したド
リフト電子がイオン引出し電極を越えてプラズマ室側に
侵入するのを防ぎ、これにより異常放電の少ないイオン
ビーム装置を提供することを目的とする。
It is an object of the present invention to provide an ion beam device that prevents drift electrons generated on the downstream side of the ion extraction electrode from penetrating the plasma chamber side beyond the ion extraction electrode, thereby reducing abnormal discharge.

〔問題点を解決するための手段〕[Means for solving problems]

上記目的を達成するため、発明者らがプラズマ室と真空
容器との間の異常放電の原因につき詳細な実験、検討を
重ねた結果、異常放電は、イオン引出し電極より下流側
で発生した電子がイオンビームの中だけでなく真空容器
全体にドリフトし、第7図の符号30に示すように電子が
イオン引出し電極と真空容器との間を通り抜けてプラズ
マ室まわりに到達することによつて起こるものであり、
この到達した電子がプラズマ室側へ加速されてプラズマ
室近傍の金属に衝突し、前述のような溶融現象を起こす
ものであることが判明した。そこで、前述の目的を達成
するための手段として、本発明の第一発明によれば、室
壁に細孔を備えるとともに室内において気体または金属
蒸気がプラズマ化され、かつ接地電位に対して正電位に
課電されるプラズマ室と、板状に形成された中央部に細
孔を備え、前記プラズマ室の外部に該プラズマ室の細孔
と同軸に対向して配され接地電位に対し負電位に課電さ
れて、前記プラズマ室からイオンを引き出すイオン引出
し電極と、板状に形成されて中央部に細孔を備え前記イ
オン引出し電極と同軸にかつ該電極と間隔をおいて該電
極の反プラズマ室側に配されて接地電位にある接地電極
と、前記プラズマ室、イオン引出し電極および接地電極
を囲んで接地電位にある金属製真空容器とを備えたイオ
ンビーム装置であって、前記イオン引出し電極もしくは
接地電極と真空容器との間に形成されるリング状スペー
ス中に該両電極と同軸に配され接地電位もしくは接地電
位に対して負の電位に課電されるリング状電極が配され
たものにおいて、該リング状電極は、断面形状がL字形
に形成され、該L字の1辺が真空容器の内壁面と平行に
対向するとともに他の1辺の端部がイオン引出し電極の
外周を密に取り巻いて該イオン引出し電極と一体化され
る電極であることとする。
In order to achieve the above object, the inventors conducted detailed experiments and studies on the cause of the abnormal discharge between the plasma chamber and the vacuum vessel, and as a result, the abnormal discharge was caused by the electrons generated on the downstream side of the ion extraction electrode. Drift not only in the ion beam but in the entire vacuum chamber, and is caused by electrons passing between the ion extraction electrode and the vacuum chamber and reaching around the plasma chamber as shown by reference numeral 30 in FIG. And
It was found that the arriving electrons are accelerated toward the plasma chamber and collide with the metal in the vicinity of the plasma chamber to cause the melting phenomenon as described above. Therefore, according to the first aspect of the present invention, as means for achieving the above-mentioned object, according to the first aspect of the present invention, pores are provided in the chamber wall, and the gas or metal vapor is plasmatized in the chamber, and is positive potential with respect to the ground potential. A plasma chamber to be charged to the plate, and a hole formed in the central portion formed in a plate shape, and is arranged outside the plasma chamber so as to face the hole of the plasma chamber and coaxially, and to have a negative potential with respect to the ground potential. An ion extraction electrode that is charged and draws out ions from the plasma chamber, and an anti-plasma of the electrode that is formed in a plate shape and has a pore in the center thereof, is coaxial with the ion extraction electrode, and is spaced apart from the electrode. An ion beam apparatus comprising a ground electrode disposed on the chamber side and having a ground potential, the plasma chamber, an ion extraction electrode, and a metal vacuum container surrounding the ground electrode and having a ground potential, wherein the ion extraction electrode Or, in the ring-shaped space formed between the ground electrode and the vacuum container, a ring-shaped electrode arranged coaxially with the two electrodes and charged with a ground potential or a negative potential with respect to the ground potential is arranged. In this case, the ring-shaped electrode has an L-shaped cross section, and one side of the L-shape faces the inner wall surface of the vacuum container in parallel, and the other one side of the ring-shaped electrode surrounds the outer circumference of the ion extracting electrode. The electrode is tightly surrounded and integrated with the ion extracting electrode.

また、本発明の第二発明によれば、室壁に細孔を備える
とともに室内において気体または金属蒸気がプラズマ化
され、かつ接地電位に対して正電位に課電されるプラズ
マ室と、板状に形成された中央部に細孔を備え、前記プ
ラズマ室の外部に該プラズマ室の細孔と同軸に対向して
配され接地電位に対し負電位に課電されて、前記プラズ
マ室からイオンを引き出すイオン引出し電極と、板状に
形成されて中央部に細孔を備え前記イオン引出し電極と
同軸にかつ該電極と間隔をおいて該電極の反プラズマ室
側に配されて接地電位にある接地電極と、前記プラズマ
室、イオン引出し電極および接地電極を囲んで接地電位
にある金属製真空容器とを備えたイオンビーム装置であ
って、前記イオン引出し電極もしくは接地電極と真空容
器との間に形成されるリング状スペース中に該両電極と
同軸に配され接地電位もしくは接地電位に対して負の電
位に課電されるリング状電極が配されたものにおいて、
該リング状電極は、外周側が真空容器の内壁面と密に接
触し内周側が接地電極の外周面と密に接触して両者に一
体化される中空円板状電極であることとする。
Further, according to the second invention of the present invention, a plasma chamber in which a chamber wall is provided with pores and gas or metal vapor is plasmatized in the chamber and is charged to a positive potential with respect to the ground potential, Is provided in the central portion of the plasma chamber, and is disposed outside the plasma chamber so as to be coaxially opposed to the pores of the plasma chamber and is charged to a negative potential with respect to the ground potential to remove ions from the plasma chamber. An ion-extracting electrode for extraction and a plate-shaped hole having a small hole in the central portion thereof, which is arranged coaxially with the ion-extracting electrode and at a distance from the electrode on the side opposite to the plasma chamber and at a ground potential An ion beam device comprising an electrode and a metal vacuum container surrounding the plasma chamber, the ion extracting electrode, and the ground electrode and having a ground potential, the ion beam device being formed between the ion extracting electrode or the ground electrode and the vacuum container. It In those negative ring electrode being Kaden to the potential was arranged against that in the ring-shaped space disposed in the both electrodes coaxially ground potential or a ground potential,
It is assumed that the ring-shaped electrode is a hollow disc-shaped electrode, the outer peripheral side of which is in close contact with the inner wall surface of the vacuum container and the inner peripheral side of which is in close contact with the outer peripheral surface of the ground electrode, and which are integrated with both.

さらに、本発明の第三発明によれば、室壁に細孔を備え
るとともに室内において気体または金属蒸気がプラズマ
化され、かつ接地電位に対して正電位に課電されるプラ
ズマ室と、板状に形成された中央部に細孔を備え、前記
プラズマ室の外部に該プラズマ室の細孔と同軸に対向し
て配され接地電位に対し負電位に課電されて、前記プラ
ズマ室からイオンを引き出すイオン引出し電極と、板状
に形成されて中央部に細孔を備え前記イオン引出し電極
と同軸にかつ該電極と間隔をおいて該電極の反プラズマ
室側に配されて接地電位にある接地電極と、前記プラズ
マ室、イオン引出し電極および接地電極を囲んで接地電
位にある金属製真空容器とを備えたイオンビーム装置で
あって、前記イオン引出し電極もしくは接地電極と真空
容器との間に形成されるリング状スペース中に該両電極
と同軸に配され接地電位もしくは接地電位に対して負の
電位に課電されるリング状電極が配されたものにおい
て、該リング状電極は、イオン引出し電極と真空容器と
の間に配され内径側が該イオン引出し電極の外周面と密
に接触して該電極と一体化される,板面に複数の貫通孔
を備えた中空円板状電極と、接地電極と真空容器との間
に配され外径側が該真空容器の内壁面に密に接触し内径
側が該接地電極の外周面と密に接触して一体化される,
板面に複数の貫通孔を備えた中空円板状電極とからなる
こととする。
Further, according to the third aspect of the present invention, a plasma chamber in which a chamber wall is provided with pores and gas or metal vapor is plasmatized in the chamber and is applied to a positive potential with respect to the ground potential, Is provided in the central portion of the plasma chamber, and is disposed outside the plasma chamber so as to be coaxially opposed to the pores of the plasma chamber and is charged to a negative potential with respect to the ground potential to remove ions from the plasma chamber. An ion-extracting electrode for extraction and a plate-shaped hole having a small hole in the central portion thereof, which is arranged coaxially with the ion-extracting electrode and at a distance from the electrode on the side opposite to the plasma chamber and at a ground potential An ion beam device comprising an electrode and a metal vacuum container surrounding the plasma chamber, the ion extracting electrode, and the ground electrode and having a ground potential, the ion beam device being formed between the ion extracting electrode or the ground electrode and the vacuum container. A ring-shaped electrode disposed coaxially with the both electrodes in the ring-shaped space to be applied with a ground potential or a negative potential with respect to the ground potential. A hollow disk-shaped electrode having a plurality of through holes in the plate surface, which is arranged between the vacuum container and the inner diameter side of the electrode for intimately contacting the outer peripheral surface of the ion extracting electrode, and which is integrated with the electrode, and a ground electrode. And an outer diameter side are in close contact with the inner wall surface of the vacuum vessel and an inner diameter side is in close contact with the outer peripheral surface of the ground electrode to be integrated.
A hollow disk-shaped electrode having a plurality of through holes on the plate surface.

〔作用〕[Action]

このように、イオン引出し電極もしくは接地電極と真空
容器との間のリング状スペース中に該両電極と同軸にリ
ング状電極を配し、このリング状電極に接地電位もしく
は接地電位に対して負の電位を与えることにより、リン
グ状電極とイオン引出し電極との間、またはリング状電
極と接地電極および真空容器との間の挾い間隙には、従
来のイオン引出し電極と真空容器との間に形成されてい
た電界よりはるかに強い電界を形成せしめうることか
ら、このリング状電極の傍を通り抜けようとする電子は
この強い電界の作用をうけてリング状電極あるいは真空
容器や接地電極に流入し、プラズマ室側への電子の侵入
が防止されてプラズマ室と真空容器との間の異常放電が
激減する。
Thus, a ring-shaped electrode is arranged coaxially with both electrodes in the ring-shaped space between the ion extraction electrode or the ground electrode and the vacuum container, and the ring-shaped electrode is grounded or negative to the grounded potential. By applying an electric potential, a gap between the ring-shaped electrode and the ion extraction electrode, or between the ring-shaped electrode and the ground electrode and the vacuum container is formed between the conventional ion extraction electrode and the vacuum container. Since it is possible to form an electric field much stronger than the electric field that was generated, electrons that try to pass by this ring electrode flow into the ring electrode or the vacuum container or the ground electrode under the action of this strong electric field, Electrons are prevented from entering the plasma chamber side, and abnormal discharge between the plasma chamber and the vacuum container is drastically reduced.

なお、リング状電極は半径方向に幅を有するから、イオ
ン引出し電極の下流側から上流側へ向かつて電子が侵入
するときの通過断面積が減少し、大きくはないがリング
状電極は幾何学的にも異常放電の頻度を低減せしめる作
用を有する。
Since the ring-shaped electrode has a width in the radial direction, the cross-sectional area of passage when electrons invade from the downstream side to the upstream side of the ion extraction electrode decreases, and the ring-shaped electrode has a small geometrical shape. Also, it has the effect of reducing the frequency of abnormal discharge.

〔実施例〕〔Example〕

第1図に本発明の第1の参考例を示す。接地電極8と真
空容器7との間のリング状スペース中に接地電極8と同
心に断面が円形のリング状電極10が配され、この電極に
イオン引出し電極2とほぼ同等の負電位が与えられてい
る。従つてこリング状電極と接地電極8との間および真
空容器7との間には、従来のイオン引出し電極2と真空
容器7との間に形成されていた電界よりもはるかに強い
電界が形成され、下流側から上流側へ向かつてドリフト
してきた電子はこの電界によつて接地電極あるいは真空
容器に吸い寄せられる。従つてドリフト電子がプラズマ
室に向かつて高エネルギに加速することがなくなり、プ
ラズマ室側の損傷が防止される。
FIG. 1 shows a first reference example of the present invention. A ring-shaped electrode 10 having a circular cross section is arranged concentrically with the ground electrode 8 in a ring-shaped space between the ground electrode 8 and the vacuum container 7, and a negative potential almost equal to that of the ion extraction electrode 2 is applied to this electrode. ing. Therefore, an electric field much stronger than the electric field formed between the conventional ion extracting electrode 2 and the vacuum container 7 is formed between the lever electrode and the ground electrode 8 and between the vacuum container 7. The electrons that have drifted from the downstream side to the upstream side are attracted to the ground electrode or the vacuum container by this electric field. Therefore, the drift electrons are never accelerated toward the plasma chamber to high energy, and damage to the plasma chamber side is prevented.

第2図は本発明の第1実施例を示すものであり、リング
状電極の断面がL形に形成され、接地電位に対してイオ
ン引出し電極に等しい負電位に課電されている。この場
合には構造簡易化のため、リング状電極断面のL形の1
辺が真空容器7の内面に対して平行に対向し、他の1辺
の端部がイオン引出し電極2の外周面を密にとり囲むよ
うにしてリング状電極11とイオン引出し電極2とを一体
化するとともに、リング状電極と真空容器との間の対向
間隙に強電界を形成させている。従つてこの対向間隙を
通過しようとするドリフト電子はL形の対向1辺の長さ
にわたり強電界の作用を受けることになるから、この間
隙を通り抜けてプラズマ室側へ向かう電子の数は極めて
少なくなる。またL形の他の1辺はプラズマ室側へ向か
うドリフト電子の通路断面積を塞ぐ役割をなし、従つ
て、ここで進路を阻まれた電子は接地電極側へ引き寄せ
られ、もはやプラズマ室側の異常放電に寄与することは
できない。
FIG. 2 shows the first embodiment of the present invention in which the ring-shaped electrode has an L-shaped cross section and is applied with a negative potential equal to that of the ion extracting electrode with respect to the ground potential. In this case, in order to simplify the structure, the L-shaped 1
The ring-shaped electrode 11 and the ion-extracting electrode 2 are integrated so that their sides face each other in parallel to the inner surface of the vacuum container 7 and the ends of the other side closely surround the outer peripheral surface of the ion-extracting electrode 2. A strong electric field is formed in the facing gap between the ring electrode and the vacuum container. Therefore, the drift electrons that try to pass through the facing gap are subjected to the action of a strong electric field over the length of one side of the L-shaped facing, so that the number of electrons passing through the gap toward the plasma chamber is extremely small. Become. Further, the other one side of the L-shape plays a role of blocking the passage cross-sectional area of the drift electron toward the plasma chamber side, and therefore the electron whose path is blocked here is attracted to the ground electrode side and is no longer on the plasma chamber side. It cannot contribute to abnormal discharge.

第3図に本発明の第2の参考例を示す。この実施例で
は、リング状電極を外径が真空容器7の内径にほぼ等し
い、偏平な矩形断面を有する電極12として構成すること
により、ドリフト電子の通路断面積を効果的に狭めると
ともにこの電極を真空容器7と一体化して同電位とし、
イオン引出し電極2との間に強電界を形成させている。
FIG. 3 shows a second reference example of the present invention. In this embodiment, the ring-shaped electrode is configured as the electrode 12 having a flat rectangular cross section whose outer diameter is substantially equal to the inner diameter of the vacuum container 7, whereby the cross-sectional area of the drift electron passage is effectively narrowed and this electrode is Integrated with the vacuum container 7 to have the same potential,
A strong electric field is formed between the ion extracting electrode 2.

第4図は本発明の第2の実施例を示すものであり、第3
図における偏平なリング状電極を接地電極8と真空容器
7との間に配するとともにこの両者と一体化して同電位
としたものである。この場合にはドリフト電子の通路
は、電子軌道34に示すように接地電極8の細孔側のみと
なり、通路断面積が著しく狭められるとともにこの細孔
を通過した電子は、イオン引出し電極2と接地電極8と
の間に形成されている電界により接地電極側へ引き寄せ
られ、両電極の対向間隙を半径方向へ通り抜ける電子の
数は極めて少なくなる。
FIG. 4 shows the second embodiment of the present invention, and the third embodiment
The flat ring-shaped electrode in the figure is arranged between the ground electrode 8 and the vacuum container 7 and integrated with both to have the same potential. In this case, the passage of the drift electrons is only on the side of the fine hole of the ground electrode 8 as shown by the electron trajectory 34, the passage cross-sectional area is significantly narrowed, and the electrons passing through this fine hole are grounded to the ion extracting electrode 2 and the ground. The number of electrons that are attracted to the ground electrode side by the electric field formed between the electrodes 8 and pass through the facing gap between the two electrodes in the radial direction is extremely small.

第5図に本発明の第3の実施例を示す。この実施例は第
4の実施例におけるリング状電極13に複数の小孔を設け
て上流側と下流側とを連通せしめるとともにイオン引出
し電極と真空容器との間にもリング状電極15を配してイ
オン引出し電極と一体化、同電位とし、かつこの電極15
にも複数の小孔を設けたものである。このようにリング
状電極に小孔を設けて多孔板とする理由は、第4の実施
例におけるリング状電極13が接地電極と真空容器との間
の通路を完全に閉鎖しており、接地電極の上流側と下流
との間の連通は細孔81のみによつて行なわれているた
め、プラズマ室内へ導入され大部分イオン化されずにプ
ラズマ室の細孔から流出する気体または金属蒸気または
接地電極の上流側に溜まりやすくなる。従つて真空排気
系が接地電極より下流側に配置されている場合にはその
排気作用は細い高温のイオンビームを介してのみ接地電
極上流側へ及ぶことになるから上流側に対する排気効果
は著しく小さく、このためこの上流側の圧力が上昇し、
プラズマ室1と真空容器7との間の絶縁間隔をd、圧力
をpとしたとき、pdの値が、このpdと耐電圧との関係を
示すV字状曲線の谷部の位置に達し、プラズマ室の真空
容器に対する耐電圧性能が下がつてしまうため、前記小
孔を介して排気を行なうことにより圧力pを十分小さく
してpdの値がV字状曲線上で十分高い耐電圧を与える位
置に来るようにするためである。従つて、この場合に
は、下流側からドリフトしてきた電子はこれらの小孔を
通過してプラズマ室側へ進もうとするが、イオン引出し
電極と接地電極ならびにこの両電極のそれぞれと一体化
されたリング状電極相互間には強電界が形成されてお
り、このため接地電極側の小孔を通り抜けた電子は再び
接地電極側または真空容器側へ引き寄せられてプラズマ
室側へ進むことができない。なお、リング状電極に設け
られた小孔の総断面積は、接地電極上流側の圧力を必
要、十分に低下せしめるだけの面積があればよいから、
リング状電極全体の面積に比べてさほど大きくする必要
はなく、従つてドリフト電子の通路を狭める効果はさほ
ど小さくならないですむ。
FIG. 5 shows a third embodiment of the present invention. In this embodiment, a plurality of small holes are provided in the ring-shaped electrode 13 in the fourth embodiment to connect the upstream side and the downstream side, and the ring-shaped electrode 15 is arranged also between the ion extracting electrode and the vacuum container. Integrated with the ion extraction electrode to the same potential, and this electrode 15
It also has a plurality of small holes. The reason why the small hole is provided in the ring-shaped electrode to form the perforated plate is that the ring-shaped electrode 13 in the fourth embodiment completely closes the passage between the ground electrode and the vacuum container. Since the communication between the upstream side and the downstream side of the plasma chamber is performed only by the pores 81, the gas or metal vapor that is introduced into the plasma chamber and flows out from the pores of the plasma chamber without being largely ionized, or the ground electrode. It becomes easy to collect on the upstream side of. Therefore, when the vacuum exhaust system is located downstream of the ground electrode, its exhaust action extends to the upstream side of the ground electrode only through the thin high-temperature ion beam, so the exhaust effect on the upstream side is extremely small. , Therefore, the pressure on this upstream side rises,
When the insulation distance between the plasma chamber 1 and the vacuum vessel 7 is d and the pressure is p, the value of pd reaches the position of the valley portion of the V-shaped curve showing the relationship between pd and withstand voltage, Since the withstand voltage performance of the plasma chamber with respect to the vacuum vessel deteriorates, the pressure p is sufficiently reduced by exhausting through the small holes so that the value of pd gives a sufficiently high withstand voltage on the V-shaped curve. This is so that it will come to the position. Therefore, in this case, the electrons drifting from the downstream side pass through these small holes and try to proceed to the plasma chamber side, but they are integrated with the ion extracting electrode, the ground electrode, and both electrodes. Further, since a strong electric field is formed between the ring-shaped electrodes, electrons passing through the small hole on the ground electrode side are attracted again to the ground electrode side or the vacuum container side and cannot proceed to the plasma chamber side. Note that the total cross-sectional area of the small holes provided in the ring-shaped electrode is necessary as long as the pressure on the upstream side of the ground electrode is necessary and it is sufficient that the area is sufficient.
It is not necessary to make the area larger than the area of the entire ring-shaped electrode, so that the effect of narrowing the path of drift electrons does not become so small.

〔発明の効果〕〔The invention's effect〕

以上に述べたように、本各発明によれば、上記の構成を
採用した結果、イオン引出し電極の下流側からプラズマ
室側へドリフトして来る電子がリング状電極と接地電
極、真空容器あるいはイオン引出し電極との間に形成さ
れる強電界の作用を受けてプラズマ室側への移動が妨げ
られ、また電子の通路断面積がリング状電極により狭め
られる結果、プラズマ室まわりの以上放電が激減すると
いう効果がある。
As described above, according to the present invention, as a result of adopting the above configuration, electrons drifting from the downstream side of the ion extraction electrode to the plasma chamber side are ring-shaped electrodes and ground electrodes, vacuum containers or ions. The movement to the plasma chamber side is hindered by the action of a strong electric field formed with the extraction electrode, and the cross-sectional area of the electron passage is narrowed by the ring-shaped electrode. As a result, the discharge around the plasma chamber is drastically reduced. There is an effect.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の第1の参考例によるイオンビーム装置
の電極構成を示す図、第2図は本発明の第一発明による
イオンビーム装置の電極構成を示す図、第3図は本発明
の第2の参考例によるイオンビーム装置の電極構成を示
す図、第4図は本発明の第二発明によるイオンビーム装
置の電極構成を示す図、第5図は本発明の第三発明によ
るイオンビーム装置の電極構成を示す図、また第6図は
従来のイオンビーム装置の構成例を示す説明図、第7図
は第6図のイオンビーム装置における要部の拡大図であ
る。 1……プラズマ室、2……イオン引出し電極、3,5……
イオンビーム、7……真空容器、8……接地電極、10,1
1,12,13,14,15……リング状電極。
FIG. 1 is a diagram showing an electrode configuration of an ion beam device according to a first reference example of the present invention, FIG. 2 is a diagram showing an electrode configuration of an ion beam device according to the first invention of the present invention, and FIG. 3 is a diagram showing the present invention. Showing the electrode constitution of the ion beam device according to the second reference example, FIG. 4 is a diagram showing the electrode constitution of the ion beam device according to the second invention of the present invention, and FIG. 5 is the ion according to the third invention of the present invention. FIG. 6 is a diagram showing an electrode configuration of the beam device, FIG. 6 is an explanatory diagram showing a configuration example of a conventional ion beam device, and FIG. 7 is an enlarged view of a main part of the ion beam device of FIG. 1 ... Plasma chamber, 2 ... Ion extraction electrode, 3,5 ...
Ion beam, 7 ... vacuum container, 8 ... ground electrode, 10,1
1,12,13,14,15 …… Ring electrodes.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/265 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical indication H01L 21/265

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】室壁に細孔を備えるとともに室内において
気体または金属蒸気がプラズマ化され、かつ接地電位に
対して正電位に課電されるプラズマ室と、板状に形成さ
れた中央部に細孔を備え、前記プラズマ室の外部に該プ
ラズマ室の細孔と同軸に対向して配され接地電位に対し
負電位に課電されて、前記プラズマ室からイオンを引き
出すイオン引出し電極と、板状に形成されて中央部に細
孔を備え前記イオン引出し電極と同軸にかつ該電極と間
隔をおいて該電極の反プラズマ室側に配されて接地電位
にある接地電極と、前記プラズマ室、イオン引出し電極
および接地電極を囲んで接地電位にある金属製真空容器
とを備えたイオンビーム装置であって、前記イオン引出
し電極もしくは接地電極と真空容器との間に形成される
リング状スペース中に該両電極と同軸に配され接地電位
もしくは接地電位に対して負の電位に課電されるリング
状電極が配されたものにおいて、該リング状電極は、断
面形状がL字形に形成され、該L字の1辺が真空容器の
内壁面と平行に対向するとともに他の1辺の端部がイオ
ン引出し電極の外周を密に取り巻いて該イオン引出し電
極と一体化される電極であることを特徴とするイオンビ
ーム装置。
1. A plasma chamber in which a chamber wall is provided with pores and a gas or a metal vapor is plasmatized in the chamber and is applied to a positive potential with respect to a ground potential, and a central portion formed in a plate shape. An ion extraction electrode that is provided with pores outside the plasma chamber and is coaxially opposed to the pores of the plasma chamber, is negatively charged with respect to the ground potential, and extracts ions from the plasma chamber; A ground electrode that is formed in a shape and has a pore in the center thereof, is coaxial with the ion extraction electrode and is disposed on the side opposite to the plasma chamber of the electrode at a distance from the electrode and is at a ground potential, and the plasma chamber, An ion beam device comprising an ion extraction electrode and a metal vacuum container surrounding the ground electrode and having a ground potential, wherein a ring-shaped space formed between the ion extraction electrode or the ground electrode and the vacuum container. In which a ring-shaped electrode disposed coaxially with the both electrodes and charged with a ground potential or a negative potential with respect to the ground potential is disposed, the ring-shaped electrode is formed to have an L-shaped cross section, One side of the L-shape is parallel to the inner wall surface of the vacuum container, and the other one side end is an electrode that closely surrounds the outer circumference of the ion extraction electrode and is integrated with the ion extraction electrode. Characteristic ion beam device.
【請求項2】室壁に細孔を備えるとともに室内において
気体または金属蒸気がプラズマ化され、かつ接地電位に
対して正電位に課電されるプラズマ室と、板状に形成さ
れた中央部に細孔を備え、前記プラズマ室の外部に該プ
ラズマ室の細孔と同軸に対向して配され接地電位に対し
負電位に課電されて、前記プラズマ室からイオンを引き
出すイオン引出し電極と、板状に形成されて中央部に細
孔を備え前記イオン引出し電極と同軸にかつ該電極と間
隔をおいて該電極の反プラズマ室側に配されて接地電位
にある接地電極と、前記プラズマ室、イオン引出し電極
および接地電極を囲んで接地電位にある金属製真空容器
とを備えたイオンビーム装置であって、前記イオン引出
し電極もしくは接地電極と真空容器との間に形成される
リング状スペース中に該両電極と同軸に配され接地電位
もしくは接地電位に対して負の電位に課電されるリング
状電極が配されたものにおいて、該リング状電極は、外
周側が真空容器の内壁面と密に接触し内周側が接地電極
の外周面と密に接触して両者に一体化される中空円板状
電極であることを特徴とするイオンビーム装置。
2. A plasma chamber in which pores are formed in a chamber wall, gas or metal vapor is turned into plasma in the chamber, and a positive potential is applied with respect to a ground potential, and a central portion formed in a plate shape. An ion extraction electrode that is provided with pores outside the plasma chamber and is coaxially opposed to the pores of the plasma chamber, is negatively charged with respect to the ground potential, and extracts ions from the plasma chamber; A ground electrode that is formed in a shape and has a pore in the center thereof, is coaxial with the ion extraction electrode and is disposed on the side opposite to the plasma chamber of the electrode at a distance from the electrode and is at a ground potential, and the plasma chamber, An ion beam device comprising an ion extraction electrode and a metal vacuum container surrounding the ground electrode and having a ground potential, wherein a ring-shaped space formed between the ion extraction electrode or the ground electrode and the vacuum container. In which a ring-shaped electrode which is arranged coaxially with the both electrodes and which is charged with a ground potential or a negative potential with respect to the ground potential is arranged, the ring-shaped electrode has an outer peripheral side closely packed with the inner wall surface of the vacuum container. The ion beam device is characterized in that it is a hollow disk-shaped electrode that is in contact with the inner peripheral side of the ground electrode and is in close contact with the outer peripheral surface of the ground electrode and is integrated with both of them.
【請求項3】室壁に細孔を備えるとともに室内において
気体または金属蒸気がプラズマ化され、かつ接地電位に
対して正電位に課電されるプラズマ室と、板状に形成さ
れた中央部に細孔を備え、前記プラズマ室の外部に該プ
ラズマ室の細孔と同軸に対向して配され接地電位に対し
負電位に課電されて、前記プラズマ室からイオンを引き
出すイオン引出し電極と、板状に形成されて中央部に細
孔を備え前記イオン引出し電極と同軸にかつ該電極と間
隔をおいて該電極の反プラズマ室側に配されて接地電位
にある接地電極と、前記プラズマ室、イオン引出し電極
および接地電極を囲んで接地電位にある金属製真空容器
とを備えたイオンビーム装置であって、前記イオン引出
し電極もしくは接地電極と真空容器との間に形成される
リング状スペース中に該両電極と同軸に配され接地電位
もしくは接地電位に対して負の電位に課電されるリング
状電極が配されたものにおいて、該リング状電極は、イ
オン引出し電極と真空容器との間に配され内径側が該イ
オン引出し電極の外周面と密に接触して該電極と一体化
される,板面に複数の貫通孔を備えた中空円板状電極
と、接地電極と真空容器との間に配され外径側が該真空
容器の内壁面に密に接触し内径側が該接地電極の外周面
と密に接触して一体化される,板面に複数の貫通孔を備
えた中空円板状電極とからなることを特徴とするイオン
ビーム装置。
3. A plasma chamber in which a chamber wall is provided with pores and gas or metal vapor is turned into plasma in the chamber and is applied to a positive potential with respect to a ground potential, and a central portion formed in a plate shape. An ion extraction electrode that is provided with pores outside the plasma chamber and is coaxially opposed to the pores of the plasma chamber, is negatively charged with respect to the ground potential, and extracts ions from the plasma chamber; A ground electrode that is formed in a shape and has a pore in the center thereof, is coaxial with the ion extraction electrode and is disposed on the side opposite to the plasma chamber of the electrode at a distance from the electrode and is at a ground potential, and the plasma chamber, An ion beam device comprising an ion extraction electrode and a metal vacuum container surrounding the ground electrode and having a ground potential, wherein a ring-shaped space formed between the ion extraction electrode or the ground electrode and the vacuum container. In which a ring-shaped electrode coaxially arranged with both electrodes and charged with a ground potential or a negative potential with respect to the ground potential is arranged, the ring-shaped electrode is provided between the ion extracting electrode and the vacuum container. A hollow disk-shaped electrode having a plurality of through-holes on its plate surface, the inner diameter side of which is in close contact with the outer peripheral surface of the ion extracting electrode and is integrated with the electrode; A hollow disk having a plurality of through holes on the plate surface, which are arranged between the outer diameter side and the inner wall surface of the vacuum container in close contact with each other and the inner diameter side closely contacts with the outer peripheral surface of the ground electrode. An ion beam device, which comprises an electrode.
JP61305642A 1986-12-22 1986-12-22 Ion beam device Expired - Lifetime JPH0752634B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61305642A JPH0752634B2 (en) 1986-12-22 1986-12-22 Ion beam device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61305642A JPH0752634B2 (en) 1986-12-22 1986-12-22 Ion beam device

Publications (2)

Publication Number Publication Date
JPS63158730A JPS63158730A (en) 1988-07-01
JPH0752634B2 true JPH0752634B2 (en) 1995-06-05

Family

ID=17947588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61305642A Expired - Lifetime JPH0752634B2 (en) 1986-12-22 1986-12-22 Ion beam device

Country Status (1)

Country Link
JP (1) JPH0752634B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6043476B2 (en) * 2011-10-12 2016-12-14 株式会社日立ハイテクノロジーズ Ion source and ion beam apparatus using the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61173444A (en) * 1985-01-28 1986-08-05 Hitachi Ltd Insulator for ion source

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JPS63158730A (en) 1988-07-01

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