JPH0753638B2 - Method for forming superconducting thin film - Google Patents
Method for forming superconducting thin filmInfo
- Publication number
- JPH0753638B2 JPH0753638B2 JP62079357A JP7935787A JPH0753638B2 JP H0753638 B2 JPH0753638 B2 JP H0753638B2 JP 62079357 A JP62079357 A JP 62079357A JP 7935787 A JP7935787 A JP 7935787A JP H0753638 B2 JPH0753638 B2 JP H0753638B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxygen
- atmosphere
- superconducting thin
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、超電導薄膜、特にセラミック系の超電導薄
膜を形成する方法に関する。TECHNICAL FIELD The present invention relates to a method for forming a superconducting thin film, particularly a ceramic superconducting thin film.
最近、セラミック系の超電導材料が高温超電導を示すも
のとして注目されている。このような材料は、例えばII
I a族元素及びI b族元素の酸化物とII a族元素の炭酸塩
の粉末を乾燥し、プレス成形、予備焼結、粉砕の過程を
数回繰り返した後、得られた粉末を再びプレス成形して
最終焼結し、ディスク状焼結体を形成している。Recently, ceramic-based superconducting materials have attracted attention as materials exhibiting high-temperature superconductivity. Such materials are, for example, II
After drying powders of oxides of Group Ia and Group Ib and carbonates of Group IIa, press molding, pre-sintering and crushing were repeated several times, the resulting powder was pressed again. It is molded and finally sintered to form a disc-shaped sintered body.
このように、緻密で均一な焼結体を得るためには、非常
に手間を要する工程の繰り返しが必要であり、また厚み
にも限度があって、エレクトロニクス分野などで要求さ
れるような薄膜化が困難である。As described above, in order to obtain a dense and uniform sintered body, it is necessary to repeat the process, which requires a lot of labor, and the thickness is limited. Is difficult.
〔発明の課題〕 そのため、スパッタリング法や蒸着法が用いられている
が、特性のよい製品を得るためには、酸化物薄膜自体の
結晶性が良好で、表面の平滑性も重要である。[Problems to be Solved by the Invention] Therefore, although the sputtering method or the vapor deposition method is used, the crystallinity of the oxide thin film itself is good and the smoothness of the surface is also important in order to obtain a product having good characteristics.
しかしながら、これらの方法で得られた酸化物薄膜は、
大気中で容易に分解しアモルファス化したり、ペースト
化し、高温で焼成したものは表面の凹凸が激しいなどの
問題がある。However, the oxide thin films obtained by these methods are
There is a problem that the material is easily decomposed in the air to become amorphous, or that it is made into a paste and fired at a high temperature has a rough surface.
そこで、酸化物薄膜形成後にアニールする方法が考えら
れるが、勿論これは工程的にも不利である。Therefore, a method of annealing after forming the oxide thin film is conceivable, but of course this is disadvantageous in terms of process.
従って、この発明の課題は、成膜後アニールなしで超電
導性を示し、表面が平滑で結晶性に優れた超電導薄膜を
得ることである。Therefore, an object of the present invention is to obtain a superconducting thin film which exhibits superconducting property without annealing after film formation and has a smooth surface and excellent crystallinity.
上記の課題を解決するため、この発明においては、スト
ロンチウム又はバリウムと希土類元素及びCuの単体又は
化合物を超高真空中で、別個に加熱蒸発して分子線を発
生させ、酸素を含有する雰囲気下で、加熱した基板上に
堆積させて、セラミック系超電導薄膜を形成したのであ
る。In order to solve the above problems, in the present invention, strontium or barium and rare earth elements and Cu simple substances or compounds in ultrahigh vacuum are separately heated and vaporized to generate molecular beams, and in an atmosphere containing oxygen. Then, the ceramic-based superconducting thin film was formed by depositing it on the heated substrate.
超高真空にすることによって、大気中のガス、特に水分
がほぼ完全に除去され、分解や異常成長を抑制した極限
状態で反応を進行できる。By making the ultra-high vacuum, gas in the atmosphere, especially water, is almost completely removed, and the reaction can proceed in an extreme state in which decomposition and abnormal growth are suppressed.
そして、前記それぞれの元素又は化合物は、制御された
加熱温度によって、希望する生成分に適した量の蒸気と
なり、これらが基板上に付着すると共に、供給された酸
素と化合及び結合しつつ高温加熱された基板上に堆積
し、平滑な結晶性超電導薄膜が基板上に直接形成され
る。Then, each of the elements or compounds becomes a vapor in an amount suitable for a desired product by the controlled heating temperature, and these vapors adhere to the substrate and are heated at a high temperature while being combined and combined with the supplied oxygen. Then, a smooth crystalline superconducting thin film is deposited directly on the substrate.
図示のように、成長室1は超高真空ポンプに連通される
吸引口2を有し、成長室1内の下部には、原料A、Bを
装填するるつぼ3が配置され、また酸素雰囲気発生源6
が配置されている。成長室1の上部には、ヒータ4を組
み込んだ回転可能のホルダ5が取り付けられ、このホル
ダ5に基板Sが支持されている。As shown in the figure, the growth chamber 1 has a suction port 2 communicating with an ultra-high vacuum pump, a crucible 3 for loading raw materials A and B is arranged in the lower part of the growth chamber 1, and an oxygen atmosphere is generated. Source 6
Are arranged. A rotatable holder 5 incorporating a heater 4 is attached to the upper part of the growth chamber 1, and a substrate S is supported by the holder 5.
いま、るつぼ3にそれぞれ単体金属又は化合物を装填
し、成長室1内を10-8〜10-11Torr程度の超高真空に保
ち、高周波加熱、抵抗加熱、電子ビーム加熱等で数100
℃〜2500℃程度の温度に加熱し蒸発せしめる。Now, each of the crucibles 3 is loaded with a single metal or a compound, and the inside of the growth chamber 1 is maintained at an ultrahigh vacuum of about 10 -8 to 10 -11 Torr, and high frequency heating, resistance heating, electron beam heating, etc.
Evaporate by heating to a temperature of ℃ ~ 2500 ℃.
一方、回転するホルダ5には、基板Sとしてジルコニア
板等が装着されており、ヒータ4によって500℃〜900℃
の温度に加熱されかつ基板Sに酸素雰囲気発生源6から
酸素ガスが吹き付けられている。なお、酸素の雰囲気の
形成は、酸素ガスの供給によるほか、酸素イオンビー
ム、酸素プラズマ、酸素ラジカルなどの活性な状態で基
板に照射してもよい。On the other hand, the rotating holder 5 is equipped with a zirconia plate or the like as the substrate S, and is heated by the heater 4 to 500 ° C to 900 ° C.
Is heated to the temperature of 1 and the oxygen gas is blown from the oxygen atmosphere generation source 6 to the substrate S. The oxygen atmosphere may be formed by supplying oxygen gas, or by irradiating the substrate in an active state such as oxygen ion beam, oxygen plasma, or oxygen radical.
このようにして、蒸発した原料は、分子線となって基板
S上に付着し、酸素と化合及び結合しながら堆積して薄
膜が形成される。In this way, the evaporated raw material becomes a molecular beam and adheres to the substrate S, and is deposited while being combined and combined with oxygen to form a thin film.
さらに、基板Sに予めマスキングを施して、セラミック
薄膜を形成した後、マスキングを除去するか、場合によ
ってはマスキングをそのままにしておいて、超電導回路
を形成することもできる。Furthermore, after the substrate S is masked in advance to form the ceramic thin film, the masking may be removed or the masking may be left as it is to form the superconducting circuit.
次に、さらに詳細な実施例について述べる。Next, more detailed examples will be described.
いま、原料としてLa、Sr、Cuをそれぞれるつぼに充填し
た後、成長室を10-8〜10-11Torr程度に減圧し、ジルコ
ニア基板を約600℃に加熱すると共に、15rpmで回転さ
せ、酸素分圧10-3〜10-7Torrの雰囲気中で、電子ビーム
により、同時にLa、Sr、Cuをそれぞれ加熱蒸発させて強
度1×10-7〜1×10-5Torrの分子線を発生させ、上記ジ
ルコニア基板上にLa−Sr−Cu−O系のセラミックより成
る超電導薄膜を形成した。薄膜は約1μmであり、表面
は平滑で臨界温度は約40゜Kであった。Now, after filling each of La, Sr, and Cu as raw materials into the crucible, the growth chamber is depressurized to about 10 -8 to 10 -11 Torr, the zirconia substrate is heated to about 600 ° C, and rotated at 15 rpm, and oxygen is added. In an atmosphere with a partial pressure of 10 -3 to 10 -7 Torr, La, Sr, and Cu are simultaneously heated and evaporated by an electron beam to generate a molecular beam with an intensity of 1 × 10 -7 to 1 × 10 -5 Torr. A superconducting thin film made of La-Sr-Cu-O ceramic was formed on the zirconia substrate. The thin film was about 1 μm, the surface was smooth, and the critical temperature was about 40 ° K.
この発明によれば、以上のように、超高真空下におい
て、基板を加熱しながら酸素雰囲気中で原料を分子線化
して基板上に付着させ堆積させたので、大気中の汚染源
がほぼ完全に除去された状態で反応が進行し、酸素欠損
の少ない均一な構造を有する平滑な結晶性超電導薄膜が
アニールなしで直接得られ、従って性能の優れた種々の
超電導材料を容易に作成することができる。According to the present invention, as described above, since the raw material is molecular beam-formed and deposited on the substrate in the oxygen atmosphere while heating the substrate under the ultra-high vacuum, the pollution source in the atmosphere is almost completely removed. The reaction proceeds in the removed state, and a smooth crystalline superconducting thin film having a uniform structure with few oxygen vacancies can be directly obtained without annealing. Therefore, various superconducting materials with excellent performance can be easily prepared. .
図はこの発明に用いる装置の一例を示す線図である。 1……成長室、2……吸引口、 3……るつぼ、4……ヒータ、 5……ホルダ、6……酸素雰囲気発生源、 A、B……原料、S……基板。 The figure is a diagram showing an example of an apparatus used in the present invention. 1 ... Growth chamber, 2 ... Suction port, 3 ... Crucible, 4 ... Heater, 5 ... Holder, 6 ... Oxygen atmosphere generation source, A, B ... Raw material, S ... Substrate.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01B 13/00 565 D 7244−5G H01L 39/12 ZAA C 9276−4M (72)発明者 八尾 秀樹 大阪府大阪市此花区島屋1丁目1番3号 住友電気工業株式会社大阪製作所内 (56)参考文献 特開 昭63−237313(JP,A)─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 6 Identification number Internal reference number FI Technical indication location H01B 13/00 565 D 7244-5G H01L 39/12 ZAA C 9276-4M (72) Inventor Hideki Yao Sumitomo Electric Industries, Ltd. Osaka Works, 1-3-1, Shimaya, Konohana-ku, Osaka-shi, Osaka (56) Reference JP-A-63-237313 (JP, A)
Claims (3)
及び銅の単体金属又は化合物を超高真空下酸素雰囲気中
で、それぞれ加熱蒸発させて分子線を発生させ、加熱し
た基板上に付着させて堆積させ、基板上に直接超電導薄
膜を形成することから成る超電導薄膜の形成方法。1. A strontium or barium elemental metal or compound of a rare earth element and copper in an oxygen atmosphere under ultrahigh vacuum is heated and vaporized to generate a molecular beam, which is deposited on a heated substrate by deposition. A method of forming a superconducting thin film, which comprises directly forming a superconducting thin film on a substrate.
ム、スカンジウムのいずれかである特許請求の範囲第
(1)項記載の超電導薄膜の形成方法。2. The method for forming a superconducting thin film according to claim 1, wherein the rare earth element is any one of lanthanum, yttrium and scandium.
酸素ガス雰囲気、酸素プラズマ雰囲気、酸素イオン雰囲
気、酸素ラジカル雰囲気のいずれか又はそれらの少なく
とも2種類の混合である特許請求の範囲第(1)項記載
の超電導薄膜の形成方法。3. The oxygen atmosphere is any one of an oxygen gas atmosphere, a high temperature oxygen gas atmosphere, an oxygen plasma atmosphere, an oxygen ion atmosphere, an oxygen radical atmosphere, or a mixture of at least two kinds thereof. ) The method for forming a superconducting thin film according to the item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079357A JPH0753638B2 (en) | 1987-03-30 | 1987-03-30 | Method for forming superconducting thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62079357A JPH0753638B2 (en) | 1987-03-30 | 1987-03-30 | Method for forming superconducting thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63244530A JPS63244530A (en) | 1988-10-12 |
| JPH0753638B2 true JPH0753638B2 (en) | 1995-06-07 |
Family
ID=13687645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62079357A Expired - Lifetime JPH0753638B2 (en) | 1987-03-30 | 1987-03-30 | Method for forming superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0753638B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01212220A (en) * | 1987-10-09 | 1989-08-25 | Fujitsu Ltd | Vapor growth method for superconducting material |
| JP4481027B2 (en) | 2003-02-17 | 2010-06-16 | 財団法人ファインセラミックスセンター | Thermal barrier coating member and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63225528A (en) * | 1987-03-13 | 1988-09-20 | Toa Nenryo Kogyo Kk | Production of superconductive compound oxide |
| JP2711253B2 (en) * | 1987-03-18 | 1998-02-10 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Superconducting film and method for forming the same |
-
1987
- 1987-03-30 JP JP62079357A patent/JPH0753638B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63244530A (en) | 1988-10-12 |
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