JPH0754677B2 - X-ray analysis electron microscope - Google Patents
X-ray analysis electron microscopeInfo
- Publication number
- JPH0754677B2 JPH0754677B2 JP62261035A JP26103587A JPH0754677B2 JP H0754677 B2 JPH0754677 B2 JP H0754677B2 JP 62261035 A JP62261035 A JP 62261035A JP 26103587 A JP26103587 A JP 26103587A JP H0754677 B2 JPH0754677 B2 JP H0754677B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electron beam
- ray
- integrating
- electron microscope
- Prior art date
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- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は、電子線照射により発生するX線に基づいて分
析を行なうX線分析電子顕微鏡に関する。TECHNICAL FIELD The present invention relates to an X-ray analysis electron microscope that performs analysis based on X-rays generated by electron beam irradiation.
[従来の技術] 従来、電子顕微鏡等により観測する試料上の所望の点に
電子線を集束して、該試料上の点から放出される特性X
線を試料近傍に配置される検出器によって検出し、該検
出信号に基づいてX線スペクトルを表示する装置が知ら
れている。[Prior Art] Conventionally, a characteristic X emitted from a point on a sample by focusing an electron beam on a desired point on the sample observed by an electron microscope or the like.
An apparatus is known in which a line is detected by a detector arranged near the sample, and an X-ray spectrum is displayed based on the detection signal.
[発明が解決しようとする問題点] このような装置によって試料から放出されるX線をスペ
クトル分析する際に、試料に照射される電子線の入射角
は様々な値に選ばれるが、測定中は選ばれた値に保持さ
れる。[Problems to be Solved by the Invention] When X-rays emitted from a sample are spectrally analyzed by such an apparatus, the incident angle of the electron beam with which the sample is irradiated is selected to various values, but during measurement. Is held at the chosen value.
しかし、試料の結晶状態と電子線の該結晶性試料(結晶
面)への入射角度によっては、可干渉制動輻射やチャン
ネリンング放射を起こし、該試料から特定のエネルギー
を有するX線が発生する場合がある。第3図は結晶性を
有する試料に電子線EBが入射した場合に可干渉制動輻射
が発生する状況を示している。同図において、ある入射
角度で結晶に入射した電子線(電子)は、結晶中の原紙
と次々に一定の周期で衝突するため、該衝突により放出
される電磁波(制動輻射)は位相に相関性を有する可干
渉な電磁波となる。そのため、試料の組成とは無関係の
特定なエネルギーを有するX線(不正X線)が発生し、
例えばアルミニウム(Al)と銀(Ag)の合金試料につい
て分析した場合等に、第4図に示すようにAlの特性X線
ピークAとAgの特性X線ピークBとの間に試料の組成と
は無関係の不正なX線ピークCが発生して、定量分析の
精度や再現性等を著しく悪化させることが問題となって
いる。However, depending on the crystalline state of the sample and the angle of incidence of the electron beam on the crystalline sample (crystal plane), coherent bremsstrahlung or channeling radiation is generated, and the sample generates X-rays having specific energy. There are cases. FIG. 3 shows a situation in which coherent bremsstrahlung is generated when an electron beam EB is incident on a crystalline sample. In the figure, electron beams (electrons) incident on the crystal at a certain incident angle collide with the base paper in the crystal one after another with a constant period, and thus the electromagnetic wave (braking radiation) emitted by the collision has a phase correlation. And becomes a coherent electromagnetic wave. Therefore, X-rays (incorrect X-rays) having a specific energy irrelevant to the composition of the sample are generated,
For example, when an alloy sample of aluminum (Al) and silver (Ag) is analyzed, as shown in FIG. 4, the composition of the sample is between the characteristic X-ray peak A of Al and the characteristic X-ray peak B of Ag. The problem is that an unrelated false X-ray peak C is generated, and the accuracy and reproducibility of the quantitative analysis are significantly deteriorated.
本発明は上記問題点を考慮し、簡単な構成の追加により
不正なピークを除去することのできるX線分析電子顕微
鏡を提供することを目的としている。The present invention has been made in view of the above problems, and an object of the present invention is to provide an X-ray analytical electron microscope capable of removing an incorrect peak by adding a simple configuration.
[問題点を解決するための手段] 本願発明のX線分析電子顕微鏡は、電子線を試料面上に
集束するための集束レンズと、試料への電子線の照射に
基づいて得られる特性X線をエネルギー又は波長領域毎
に検出する検出手段と、該検出手段より得られる検出信
号を各エネルギー又は波長領域毎に積算するための積算
手段と、該積算手段による積算期間中に前記試料上の電
子線照射点を固定したまま電子線入射角度を所定の角度
範囲にわたって周期的に変化させるための手段と、前記
積算手段よりの出力信号に基づいてX線スペクトルを得
るための手段とを備えている。[Means for Solving Problems] An X-ray analysis electron microscope of the present invention is a focusing lens for focusing an electron beam on a sample surface, and a characteristic X-ray obtained by irradiating the sample with the electron beam. Detecting means for each energy or wavelength region, integrating means for integrating the detection signal obtained by the detecting means for each energy or wavelength region, and electrons on the sample during the integrating period by the integrating means. Means for periodically changing the electron beam incident angle over a predetermined angle range while fixing the radiation point, and means for obtaining an X-ray spectrum based on the output signal from the integrating means are provided. .
[作用] 本発明においては、試料上の所望の点に電子線を照射す
ると共に、該電子線照射点を固定しつつ、該点における
電子線入射角度を周期的に変化させながら、試料から放
出される特性X線を検出し、不正なピークを除去するよ
うにしている。[Operation] In the present invention, a desired point on the sample is irradiated with an electron beam, and while the electron beam irradiation point is fixed, the electron beam incident angle at the point is periodically changed and emitted from the sample. The characteristic X-rays that are generated are detected, and the false peaks are removed.
[実施例] 以下、本発明の実施例を図面に基づいて説明する。第1
図は本発明の第1の実施例を説明するための装置構成
図、第2図は本発明の第2の実施例を説明するための装
置構成図である。[Embodiment] An embodiment of the present invention will be described below with reference to the drawings. First
FIG. 1 is an apparatus configuration diagram for explaining a first embodiment of the present invention, and FIG. 2 is an apparatus configuration diagram for explaining a second embodiment of the present invention.
まず、第1図に示す第1の実施例は透過電子顕微鏡にお
いてエネルギ分散型X線検出器を用いてX線分析を行な
う場合の装置であって、第1図においては1は電子銃、
2,3は集束レンズ、4a,4bは偏向コイル、5は試料、6は
対物レンズ、7は中間レンズ、8は投影レンズ、9は螢
光板、10,11,12,13、14は各レンズの制御部、15は偏向
コイル4の走査部、16は照射角度制御回路、17はエネル
ギ分散型X線検出器、18は波高分析器を含むX線分析装
置である。First, a first embodiment shown in FIG. 1 is an apparatus for performing X-ray analysis using an energy dispersive X-ray detector in a transmission electron microscope. In FIG. 1, 1 is an electron gun,
Reference numerals 2 and 3 are focusing lenses, 4a and 4b are deflection coils, 5 is a sample, 6 is an objective lens, 7 is an intermediate lens, 8 is a projection lens, 9 is a fluorescent plate, and 10, 11, 12, 13, and 14 are each lens. , A scanning unit of the deflection coil 4, 16 an irradiation angle control circuit, 17 an energy dispersive X-ray detector, and 18 an X-ray analyzer including a wave height analyzer.
第1図に示すような構成の透過電子顕微鏡では、電子銃
1を出た電子線は制御部7,8によって制御される第1段
及び第2段の集束レンズ2,3により集束された後、試料
5上に投射される。該試料を透過した電子はレンズ7,8,
9によって拡大され、螢光板9上に終像を結ぶ。この様
な透過電子顕微鏡を用いて試料表面のX線分析を行なう
場合、電子銃1よりの電子線EBは制御部10,11によって
制御される第1段の集束レンズ2及び第2段の集束レン
ズ3により集束される。集束された電子線は偏向コイル
4a,4bにより偏向された後、結晶性試料5の所望の点に
入射する。そして、このとき該電子線によって励起さ
れ、試料から放出されたX線を該試料近傍に配置された
X線検出器で検出する。ここで、偏向コイル4a,4bの偏
向角には、偏向コイル4aによる偏向角をθとしたとき、
偏向コイル4bによる偏向角が−2θになるような関係が
走査部15によって与えれられている。このような関係を
偏向コイル4a,4bに与えると、どのようなθに対しても
光軸上の同一位置を電子線が通ることになり、その位置
に試料5が配置されている。更に、走査部15は、そのθ
の値を例えば−3°≦θ≦3°の範囲で繰り返し掃引す
る。そのため、試料に入射する電子線は試料上の電子線
照射点を中心として入射角度が±3°の範囲で首を振る
ように繰り返し掃引されることになる。掃引の繰り返し
周期はX線分析を行なう計測期間よりも十分短く設定さ
れるため、計測期間内に多数回の掃引が行なわれる。In the transmission electron microscope configured as shown in FIG. 1, after the electron beam emitted from the electron gun 1 is focused by the focusing lenses 2 and 3 of the first and second stages controlled by the control units 7 and 8. , Is projected onto the sample 5. Electrons transmitted through the sample are lenses 7,8,
It is magnified by 9 and forms the final image on the fluorescent plate 9. When performing X-ray analysis of the sample surface using such a transmission electron microscope, the electron beam EB from the electron gun 1 is controlled by the control units 10 and 11, and the focusing lens 2 of the first stage and the focusing lens 2 of the second stage are controlled. It is focused by the lens 3. The focused electron beam is a deflection coil
After being deflected by 4a and 4b, it is incident on a desired point of the crystalline sample 5. Then, at this time, the X-rays excited by the electron beam and emitted from the sample are detected by the X-ray detector arranged near the sample. Here, when the deflection angle by the deflection coil 4a is θ,
The scanning unit 15 gives the relationship that the deflection angle by the deflection coil 4b becomes −2θ. When such a relationship is given to the deflection coils 4a and 4b, the electron beam passes through the same position on the optical axis for any θ, and the sample 5 is placed at that position. In addition, the scanning unit 15
The value of is repeatedly swept within the range of −3 ° ≦ θ ≦ 3 °. Therefore, the electron beam incident on the sample is repeatedly swept around the electron beam irradiation point on the sample so as to swing its head within an incident angle range of ± 3 °. Since the sweep repetition period is set sufficiently shorter than the measurement period in which X-ray analysis is performed, a large number of sweeps are performed within the measurement period.
このように、結晶性試料に入射する電子線の入射角度を
連続的に繰り返し変化させると、ある計測期間かけて得
られるX線スペクトル中で、電子線入射角度に依存しな
い特性X線は計測期間の間積算されてスペクトル強度が
増すが、電子線入射角度に依存する不正はX線は入射角
度が特定値になった瞬間にしか発生しないため、積算効
果が上がらず、スペクトルは第4図における不正なX線
によるピークCがほとんど抑圧され、特性X線によるピ
ークのみから構成されるものとなる。Thus, when the incident angle of the electron beam incident on the crystalline sample is continuously and repeatedly changed, in the X-ray spectrum obtained over a certain measurement period, the characteristic X-ray that does not depend on the electron beam incident angle is measured during the measurement period. During this period, the spectrum intensity increases, but the irregularity depending on the incident angle of the electron beam occurs only at the moment when the incident angle reaches a specific value, so the accumulation effect does not increase, and the spectrum is as shown in FIG. Almost all the peaks C due to the illegal X-rays are suppressed, and the peaks C due to the characteristic X-rays are included.
次に、第2図に示す第2の実施例は走査型電子顕微鏡に
おいて波長分散型X線分光器を用いてX線分析を行なう
場合の装置である。第2図において21は電子銃、22,23
は集束レンズ、24は偏向コイル、25は試料、26は対物レ
ンズ、27,28は集束レンズの制御部、29は偏向コイル24
の走査部、30は照射角度制御回路、31は分光結晶32、X
線検出器33から構成される波長分散型X線分光器。34は
スペクトル表示装置である。Next, a second embodiment shown in FIG. 2 is an apparatus for performing X-ray analysis using a wavelength dispersive X-ray spectrometer in a scanning electron microscope. In FIG. 2, 21 is an electron gun, 22,23
Is a focusing lens, 24 is a deflection coil, 25 is a sample, 26 is an objective lens, 27 and 28 are focusing lens control units, and 29 is a deflection coil 24.
Scanning unit, 30 an irradiation angle control circuit, 31 a dispersive crystal 32, X
A wavelength dispersive X-ray spectrometer including a line detector 33. Reference numeral 34 is a spectrum display device.
電子銃1よりの電子線EBは制御部27,28によって制御さ
れる第1段の集束レンズ22及び第2段の集束レンス23に
より集束される。集束された電子線は偏向コイル24によ
り偏向された後、対物レンズ26を経て該対物レンズの焦
点位置に配置される結晶性試料25に入射する。そして、
このとき該電子線によって励起され、試料から放出され
たX線を分析結晶32を介してX線検出器33で検出する。
ここで、前記偏向コイル24は走査部29によって制御され
るが、該走査部29は照射角度制御回路30に設定される電
子線偏向角θと掃引の繰り返し周期で電子線を対物レン
ズ26の前焦点面近傍で走査するようにしている。そのた
め、対物レンズ26を経て試料に入射する電子線は試料上
の電子線照射点を中心として首を振るように繰り返し入
射角を変えることになる。このとき、電子線の掃引の繰
り返し周期は波長分散型X線分光器の波長掃引速度に対
して十分短い周期となるように設定す。The electron beam EB from the electron gun 1 is focused by the first-stage focusing lens 22 and the second-stage focusing lens 23 controlled by the control units 27 and 28. The focused electron beam is deflected by the deflection coil 24, and then passes through the objective lens 26 and enters the crystalline sample 25 arranged at the focal position of the objective lens. And
At this time, the X-rays excited by the electron beam and emitted from the sample are detected by the X-ray detector 33 through the analysis crystal 32.
Here, the deflection coil 24 is controlled by the scanning unit 29, which scans the electron beam with the electron beam deflection angle θ set in the irradiation angle control circuit 30 and the sweep repetition period before the objective lens 26. The scanning is performed near the focal plane. Therefore, the incident angle of the electron beam incident on the sample through the objective lens 26 is repeatedly changed so as to swing its head around the electron beam irradiation point on the sample. At this time, the repetition cycle of the electron beam sweep is set to be a cycle sufficiently shorter than the wavelength sweep speed of the wavelength dispersive X-ray spectrometer.
このように、結晶性試料に入射する電子線の入射角度を
連続的に繰り返し変化させることにより、ある計測期間
かけて波長掃引して得られるX線スペクトルの中で、特
定な電子線の入射角度においてのみ起こる可干渉制動輻
射及びチャンネリング放射に起因する不正なX線の発生
を確率的に低減することができる。そこで、このとき試
料から放出されたX線を分光結晶32を介してX線検出器
33で検出し、該検出した情報をスペクトル表示装置20に
供給しX線スペクトルを表示すれば、第1の実施例の場
合と同様に、そのX線スペクトルは不正なX線によるピ
ークが抑制されたものとなる。As described above, by continuously and repeatedly changing the incident angle of the electron beam incident on the crystalline sample, the incident angle of a specific electron beam in the X-ray spectrum obtained by sweeping the wavelength over a certain measurement period. It is possible to stochastically reduce the generation of false X-rays due to coherent bremsstrahlung and channeling radiation. Therefore, the X-ray emitted from the sample at this time is transmitted through the dispersive crystal 32 to the X-ray detector.
If the X-ray spectrum is detected by 33, and the detected information is supplied to the spectrum display device 20 to display the X-ray spectrum, the X-ray spectrum is suppressed from the peak due to the incorrect X-ray, as in the case of the first embodiment. It becomes a thing.
[発明の効果] 本発明は、試料上の電子線照射点を固定したまま電子線
入射角度を所定の角度範囲にわたって周期的に変化さ
せ、試料から得られる特性をX線を各エネルギー又は波
長領域毎に積算し、その積算された信号に基づいてX線
スペクトルを得るので、試料中に含まれる元素から発生
する特性X線のスペクトル強度が、特定の電子線入射角
度時しか発生しない不正X線のスペクトル強度に比べて
大きく増加し、不正X線によるピークがほとんど抑圧さ
れたX線スペクトルを得ることができる。この結果、結
晶性を有する試料に電子線を照射した場合でも、試料の
定性、定量分析を精度よく行なうことができる。[Advantages of the Invention] The present invention changes the electron beam incident angle periodically over a predetermined angle range while fixing the electron beam irradiation point on the sample, and obtains the characteristic obtained from the sample as X-ray energy at each energy or wavelength region. Since the X-ray spectrum is obtained based on the integrated signal for each time, the spectrum intensity of the characteristic X-ray generated from the element contained in the sample is an illegal X-ray generated only at a specific electron beam incident angle. It is possible to obtain an X-ray spectrum in which the peak due to the false X-rays is almost suppressed, which is greatly increased compared to the spectrum intensity of As a result, qualitative and quantitative analysis of the sample can be performed accurately even when the sample having crystallinity is irradiated with the electron beam.
第1図は本発明の第1の実施例を説明するための装置構
成図、第2図は本発明の第2の実施例を説明するための
装置構成図、第3図及び第4図は従来例を説明するため
の図である。 1:電子銃、2,3:集束レンズ 4:偏向コイル、5:試料 6:対物レンズ 10,11:集束レンズ制御部 15:走査部、16:照射角度制御回路 17:エネルギ分散型X線検出器 18:X線分析装置FIG. 1 is an apparatus configuration diagram for explaining a first embodiment of the present invention, FIG. 2 is an apparatus configuration diagram for explaining a second embodiment of the present invention, and FIGS. 3 and 4 are It is a figure for demonstrating a prior art example. 1: electron gun, 2, 3: focusing lens 4: deflection coil, 5: sample 6: objective lens 10, 11: focusing lens control unit 15: scanning unit, 16: irradiation angle control circuit 17: energy dispersive X-ray detection Instrument 18: X-ray analyzer
Claims (1)
ンズと、試料への電子線の照射に基づいて得られる特性
X線をエネルギー又は波長領域毎に検出する検出手段
と、該検出手段より得られる検出信号を各エネルギー又
は波長領域毎に積算するための積算手段と、該積算手段
による積算期間中に前記試料上の電子線照射点を固定し
たまま電子線入射角度を所定の角度範囲にわたって周期
的に変化させるための手段と、前記積算手段よりの出力
信号に基づいてX線スペクトルを得るための手段とを備
えたX線分析電子顕微鏡。1. A focusing lens for focusing an electron beam on a sample surface, a detection means for detecting a characteristic X-ray obtained by irradiating the sample with the electron beam for each energy or wavelength region, and the detection. Integrating means for integrating the detection signal obtained by the means for each energy or wavelength region, and the electron beam incident angle at a predetermined angle while the electron beam irradiation point on the sample is fixed during the integrating period by the integrating means. An X-ray analysis electron microscope comprising means for periodically changing over a range and means for obtaining an X-ray spectrum based on an output signal from the integrating means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62261035A JPH0754677B2 (en) | 1987-10-16 | 1987-10-16 | X-ray analysis electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62261035A JPH0754677B2 (en) | 1987-10-16 | 1987-10-16 | X-ray analysis electron microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01105444A JPH01105444A (en) | 1989-04-21 |
| JPH0754677B2 true JPH0754677B2 (en) | 1995-06-07 |
Family
ID=17356148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62261035A Expired - Fee Related JPH0754677B2 (en) | 1987-10-16 | 1987-10-16 | X-ray analysis electron microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0754677B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51132885A (en) * | 1975-01-17 | 1976-11-18 | Hitachi Ltd | Pasticle ray analyzing unit |
| JPS5966853U (en) * | 1982-10-26 | 1984-05-04 | 株式会社島津製作所 | Electron beam scanning analyzer for both area and angle scanning |
-
1987
- 1987-10-16 JP JP62261035A patent/JPH0754677B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01105444A (en) | 1989-04-21 |
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