JPH0758529B2 - Method of manufacturing thin film magnetic head - Google Patents
Method of manufacturing thin film magnetic headInfo
- Publication number
- JPH0758529B2 JPH0758529B2 JP62248142A JP24814287A JPH0758529B2 JP H0758529 B2 JPH0758529 B2 JP H0758529B2 JP 62248142 A JP62248142 A JP 62248142A JP 24814287 A JP24814287 A JP 24814287A JP H0758529 B2 JPH0758529 B2 JP H0758529B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- thin film
- taper
- magnetic head
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 29
- 239000010409 thin film Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 29
- 239000004020 conductor Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000005294 ferromagnetic effect Effects 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 229910000889 permalloy Inorganic materials 0.000 description 3
- 229910000702 sendust Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 229910002555 FeNi Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】 〔発明の分野〕 本発明は、PCM（PUISE CODE MODULATION）記録再生装置
や電子スチルカメラ等に用いられる薄膜磁気ヘッドに関
し、特に絶縁層のテーパーエッチング法の改良に関する
ものである。Description: FIELD OF THE INVENTION The present invention relates to a thin film magnetic head used in a PCM (PUISE CODE MODULATION) recording / reproducing device, an electronic still camera, and the like, and more particularly to an improvement of a taper etching method for an insulating layer. is there.
従来の薄膜磁気ヘッドの製造方法は第１図に示すよう
に、まず、磁性あるいは非磁性基板（11）上にCoMbZr合
金（アルモファス）、FeAlSi合金（センダスト）、FeNi
合金（パーマロイ）等の軟磁性材料（12）をスパッタリ
ング等の真空薄膜形成技術を用いて形成する。その後Si
O2等から成る第一絶縁層（13）を形成した後、Cuあるい
はAl等の金属材料から成るコイル導体（14）を形成し、
さらにその上に第二絶縁層（15）を被着した後、コイル
導体（14）と引き出し線（18）とをつなぐためのコンタ
クト窓（図示せず）を開口しコイル導体（14）と同じ材
料から成る引き出し線（18）を形成する。その後第三絶
縁層（17）を形成する。そして前記コイル導体（14）を
すべて覆うような形でフォトレジスト（16）を塗布す
る。そしてこのフォトレジスト（16）に露光・現像を行
ないパターニングした後、約130℃程度の温度で加熱処
理を行なう。以上のように形成されたフォトレジスト
（16）をマスクとしてイオンミリング等のエッチングに
より絶縁層（13）（15）（17）を例えばイオンビーム入
射角度（フォトレジスト（16）上面の法線方向に対する
角度（ψ））30゜でテーパーエッチングする。ところ
が、上述したような加熱処理をしたフォトレジスト（1
6）をマスクとしてイオンエッチングすると、フロント
ギャップ部（イ）におけるテーパー角度（θ１）とリア
ギャップ部（ロ）におけるテーパー角度（θ２）がまっ
たく異なる角度に形成されてしまう。特に、第１図
（Ｃ）に示されるようにフォトレジストで周囲をかこま
れたリアギャップ部（ロ）のようなところのテーパ角度
（θ２）は、フロントギャップ部（イ）のようにフォト
レジストを周囲でかこまれていないところのテーパー角
度（θ１）よりも大きく例えばθ１＝45゜、θ２＝60゜
〜65゜位に形成されてしまう。このように特に磁気的な
飽和の最も著しいリアギャップ部（ロ）のテーパー角度
が急俊な角度になってしまうと、その上に被着形成され
る上部磁性体（19）をスパッタリング等の真空薄膜形成
技術で被着すると、どうしても急俊な角度を有するリア
ギャップ部のテーパー部（19b）ではフロントギャップ
部テーパー部（19a）に比べて前記上部磁性体（19）の
リアギャップ部テーパー部（19b）の膜厚がフロントギ
ャップ部テーパー部（19a）の膜厚よりもかなり薄くな
ってしまう。その結果、特に薄膜ヘッドの構造上の特徴
であるリアギャップ部テーパー部（19b）での磁気的な
飽和が著しく加速され、記録効率の低下を招く。As shown in FIG. 1, the conventional method of manufacturing a thin film magnetic head is as follows. First, on a magnetic or non-magnetic substrate (11), CoMbZr alloy (almoface), FeAlSi alloy (sendust), FeNi.
A soft magnetic material (12) such as an alloy (permalloy) is formed by using a vacuum thin film forming technique such as sputtering. Then Si
After forming the first insulating layer (13) made of O 2 etc., the coil conductor (14) made of a metal material such as Cu or Al is formed,
After depositing a second insulating layer (15) on it, a contact window (not shown) for connecting the coil conductor (14) and the lead wire (18) is opened and the same as the coil conductor (14). Form a leader line (18) of material. After that, the third insulating layer (17) is formed. Then, a photoresist (16) is applied so as to cover the entire coil conductor (14). Then, the photoresist (16) is exposed and developed, patterned, and then heat-treated at a temperature of about 130.degree. Using the photoresist (16) formed as described above as a mask, the insulating layers (13), (15) and (17) are etched, for example, by ion milling or the like to form an ion beam incident angle (with respect to the normal direction of the upper surface of the photoresist (16)). Taper etching is performed at an angle (ψ) of 30 °. However, the photoresist (1
When ion etching is performed using 6) as a mask, the taper angle (θ 1 ) in the front gap part (a) and the taper angle (θ 2 ) in the rear gap part (b) are formed to be completely different angles. Particularly, as shown in FIG. 1 (C), the taper angle (θ 2 ) at a portion such as a rear gap portion (b) surrounded by a photoresist is similar to that at a front gap portion (a). The resist is formed larger than the taper angle (θ 1 ) where it is not surrounded by the surroundings, for example, θ 1 = 45 ° and θ 2 = 60 ° to 65 °. When the taper angle of the rear gap part (b) where the magnetic saturation is most remarkable becomes steep like this, the upper magnetic body (19) adhered and formed on the rear gap part (b) becomes a vacuum such as by sputtering. When deposited by the thin film forming technique, the rear gap taper portion (19b) of the rear gap portion (19b) having a steep angle inevitably has a steeper angle than the front gap portion taper portion (19a). The film thickness of 19b) becomes considerably thinner than the film thickness of the front gap taper part (19a). As a result, magnetic saturation at the rear gap taper portion (19b), which is a structural feature of the thin film head, is significantly accelerated, resulting in a decrease in recording efficiency.
上述したようにテーパーエッチングを行なう薄膜磁気ヘ
ッドにおいては、リアギャップ部テーパー角度が急俊な
段差となり、その上に被着形成される上部磁性体が薄く
なってしまうためにヘッドに記録電流を流した時、リア
ギャップ部テーパー部で磁気飽和が生じてしまい、記録
効率が低下してしまうという問題があった。In the thin film magnetic head that performs the taper etching as described above, the taper angle of the rear gap portion becomes a steep step, and the upper magnetic body deposited on the rear gap portion becomes thin. Then, magnetic saturation occurs in the taper portion of the rear gap portion, and there is a problem that recording efficiency is reduced.
そこで、本発明は上述の欠点を解消せんがために提案さ
れたものであり、フロントギャップ部とリアギャップ部
のテーパー角度を同じにする事により上部磁極の磁気飽
和を防止し記録効率の優れた薄膜ヘッドを提供する事を
目的とする。Therefore, the present invention has been proposed in order to solve the above-mentioned drawbacks, and by making the taper angles of the front gap portion and the rear gap portion the same, magnetic saturation of the upper magnetic pole is prevented and recording efficiency is excellent. The purpose is to provide a thin film head.
上記目的を達成するために、本発明の薄膜磁気ヘッド
は、絶縁層をフォトレジストをマスクとしてテーパエッ
チングする際に、塗布されたフォトレジストを露光・現
像してパターン化した後、フォトレジストパターンを該
フォトレジストパターンが崩壊しない時間再露光した
後、温度130℃〜200℃で加熱処理して前記絶縁層をテー
パーエッチングした事を特徴とするものである。In order to achieve the above object, the thin-film magnetic head of the present invention, when the insulating layer is taper-etched using a photoresist as a mask, the applied photoresist is exposed and developed to form a pattern, and then a photoresist pattern is formed. It is characterized in that after re-exposure for a time that the photoresist pattern does not collapse, it is heat-treated at a temperature of 130 ° C. to 200 ° C. to taper-etch the insulating layer.
〔実施例〕 本発明による一実施例を図面を参照しながら詳細に説明
する。第２図において、本発明の薄膜磁気ヘッドでは、
基板（１）としてMn−Zn系フェライトやNi−Zn系フェラ
イト等の強磁性酸化物基板、またはセラミック等の非磁
性基板上にCoNbZr合金（アモルファス）、FeAlSi合金
（センダスト）、FeNi合金（パーマロイ）等の強磁性金
属材料（２）を積層した複合基板、あるいは、上記強磁
性酸化物基板上にアモルファス、センダスト、パーマロ
イ等の強磁性金属材料を積層した複合基板等が使用され
る。Embodiment An embodiment according to the present invention will be described in detail with reference to the drawings. In FIG. 2, in the thin film magnetic head of the present invention,
As a substrate (1), a ferromagnetic oxide substrate such as Mn-Zn ferrite or Ni-Zn ferrite, or a non-magnetic substrate such as ceramic, CoNbZr alloy (amorphous), FeAlSi alloy (sendust), FeNi alloy (permalloy). A composite substrate in which a ferromagnetic metal material (2) such as the above is laminated, or a composite substrate in which a ferromagnetic metal material such as amorphous, sendust, or permalloy is laminated on the above ferromagnetic oxide substrate is used.
上記強磁性金属材料（２）上に例えばSiO2等からなる第
一絶縁層（３）をスパッタリング等の真空薄膜技術で形
成した後、Cu及びAl等の金属材料より成るコイル導体
（４）を形成する。さらに前記コイル導体（４）を全て
覆うように第二絶縁層（５）が形成される。そして、コ
イル導体（４）と引き出し線（図示せず）をつなぐため
のコンタクト窓（図示せず）を開口し、コイル導体
（４）と同じ材料から成る引き出し線（図示せず）を形
成する。その後第三絶縁層（７）を形成する。そして前
記コイル導体（４）を全て覆うような形でフォトレジス
ト（６）を塗布する。そしてこのフォトレジスト（６）
に露光・現像を加えた後パターニングをする。その後パ
ターン化したフォトレジスト（６）全面に再び全面露光
を加える。その際の再露光時間をあまり長くするとパタ
ーン化したフォトレジスト（６）が泡を発生してしま
い、パターンがくずれる事がわかり再露光時間としては
10〜130秒の範囲が適当である事が我々の実験結果から
判明した。上述した再露光を加えた後温度130℃〜200℃
の範囲でフォトレジスト（６）を加熱処理する。このよ
うに再露光と加熱処理を施したフォトレジストパターン
をマスクとしてイオンミリングでイオンビーム入射角度
30゜でフロントギャップ部（Ａ部）及びリアギャップ部
（Ｂ部）に存在する絶縁層（３）（５）（７）をテーパ
ーエッチングする。この結果、フロントギャップ部のテ
ーパー角（θ３）とリアギャップ部のテーパー角
（θ４）はほとんど同じ角度で45゜に形成する事ができ
た。これはフォトレジスト（６）パターンに再露光を加
える事によりフォトレジストが熱によりより軟化しやす
く（＝流動性が増加する）なるため、フロントギャップ
部（Ａ部）やリアギャップ部（Ｂ部）のようなフォトレ
ジストに囲まれた面積の違による差がなくなり、フォト
レジストの接触角（α１）（α２）が均一になったため
である。このように絶縁層（３）（５）（７）をテーパ
ーエッチングした後ギャップ層（８）及び上部磁性体
（９）をパターンエッチングする。こうして完成した薄
膜ヘッドはリアギャップ部テーパー部（ア）での上部磁
性体（９）の膜厚が極度に薄くなる事もないため、ヘッ
ドに記録電流を流しても磁気飽和を押える事が出来、記
録効率の優れた薄膜ヘッドを提供出来る。After forming a first insulating layer (3) made of, for example, SiO 2 on the ferromagnetic metal material (2) by a vacuum thin film technique such as sputtering, a coil conductor (4) made of a metal material such as Cu and Al is formed. Form. Further, a second insulating layer (5) is formed so as to cover the coil conductor (4) entirely. Then, a contact window (not shown) for connecting the coil conductor (4) and the lead wire (not shown) is opened to form a lead wire (not shown) made of the same material as the coil conductor (4). . After that, the third insulating layer (7) is formed. Then, a photoresist (6) is applied so as to cover the coil conductor (4) entirely. And this photoresist (6)
After exposure and development, the patterning is performed. Then, the entire surface of the patterned photoresist (6) is exposed again. When the re-exposure time at that time was made too long, it was found that the patterned photoresist (6) generated bubbles and the pattern collapsed.
It was found from our experimental results that the range of 10 to 130 seconds is suitable. After the above-mentioned re-exposure, the temperature is 130 ℃ -200 ℃.
The photoresist (6) is heat-treated within the range. The ion beam incident angle is determined by ion milling using the photoresist pattern thus re-exposed and heat treated as a mask.
The insulating layers (3), (5) and (7) existing in the front gap part (A part) and the rear gap part (B part) are taper-etched at 30 °. As a result, the taper angle (θ 3 ) of the front gap portion and the taper angle (θ 4 ) of the rear gap portion could be formed at 45 °, which are almost the same. This is because when the photoresist (6) pattern is re-exposed, the photoresist is more easily softened by heat (= the fluidity is increased), so that the front gap portion (A portion) and the rear gap portion (B portion) are This is because there is no difference due to the difference in the area surrounded by the photoresist, and the contact angles (α 1 ) (α 2 ) of the photoresist are uniform. In this way, the insulating layers (3), (5) and (7) are taper-etched, and then the gap layer (8) and the upper magnetic body (9) are pattern-etched. In the thin film head thus completed, the film thickness of the upper magnetic body (9) at the rear gap taper part (a) does not become extremely thin, so that magnetic saturation can be suppressed even when a recording current is passed through the head. A thin film head with excellent recording efficiency can be provided.
〔発明の効果〕 本発明の薄膜磁気ヘッドは、絶縁層をフォトレジストを
マスクとしてテーパエッチングする際に、塗布されフォ
トレジストを露光・現像してパターン化した後、フォト
レジストパターンを該フォトレジストパターンが崩壊し
ない時間再露光した後、温度130℃〜200℃で加熱処理し
て前記絶縁層をテーパーエッチングすることにより、テ
ーパーエッチング後のテーパー角度があらゆる位置で均
一になるため、上部磁性体の膜厚を均等にして磁気飽和
を抑える事が出来、記録効率の優れた薄膜磁気ヘッドが
提供出来る。[Advantages of the Invention] In the thin-film magnetic head of the present invention, when the insulating layer is taper-etched using the photoresist as a mask, the applied photoresist is exposed and developed to be patterned, and then the photoresist pattern is formed into the photoresist pattern. After re-exposure for a time that does not collapse, the heat treatment is performed at a temperature of 130 ° C to 200 ° C to taper the insulating layer, so that the taper angle after taper etching becomes uniform at all positions. It is possible to provide a thin-film magnetic head with excellent recording efficiency by making the thickness uniform and suppressing magnetic saturation.
なお、本実施例では単層スパイラルコイル薄膜ヘッドに
ついて述べたが複数スパイラル導体薄膜ヘッドについて
も適用出来る事は勿論である。また多チャンネル薄膜磁
気ヘッドに適用しても同等の効果が得られる事は勿論で
ある。In this embodiment, the single-layer spiral coil thin film head is described, but it is needless to say that it can be applied to the plural spiral conductor thin film head. Of course, the same effect can be obtained even when applied to a multi-channel thin film magnetic head.
第１図（ａ），（ｃ），（ｅ），（ｇ）は従来の薄膜磁
気ヘッドの製造工程を示す平面図、第１図（ｂ），
（ｄ），（ｆ），（ｈ）は第１図（ａ），（ｃ），
（ｅ），（ｇ）のそれぞれのａ−ａ断面図。 第２図（ａ），（ｂ），（ｃ），（ｄ），（ｅ），
（ｆ）は本発明による一実施例を示す薄膜ヘッドの製造
工程図。 １……基板 3,5,7……絶縁層 ４……コイル導体 ６……フォトレジスト ８……ギャップ層 ９……上部磁性体1 (a), (c), (e), and (g) are plan views showing a manufacturing process of a conventional thin film magnetic head, FIG. 1 (b),
(D), (f), (h) are shown in FIGS. 1 (a), (c),
(A), (a) each aa sectional view. 2 (a), (b), (c), (d), (e),
(F) is a manufacturing process drawing of a thin film head showing an embodiment according to the present invention. 1 ... Substrate 3,5,7 ... Insulation layer 4 ... Coil conductor 6 ... Photoresist 8 ... Gap layer 9 ... Upper magnetic body
Claims (1)
部磁性体が絶縁層を介して積層形成されてなる薄膜磁気
ヘッドの製造方法において前記絶縁層をフォトレジスト
をマスクとしてテーパエッチングする際に、塗布された
フォトレジストを露光・現像してパターン化した後、フ
ォトレジストパターンを該フォトレジストパターンが崩
壊しない時間再露光した後、温度130℃〜200℃で加熱処
理して前記絶縁層をテーパーエッチングする事を特徴と
する薄膜磁気ヘッドの製造方法。1. A method of manufacturing a thin film magnetic head comprising a plurality of coil conductors and an upper magnetic body laminated on a lower magnetic body with an insulating layer interposed between the insulating layer and the photoresist when the taper etching is performed. After the applied photoresist is exposed and developed to form a pattern, the photoresist pattern is re-exposed for a time such that the photoresist pattern does not collapse, and then heat-treated at a temperature of 130 ° C to 200 ° C to form the insulating layer. A method of manufacturing a thin-film magnetic head, characterized by taper etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62248142A JPH0758529B2 (en) | 1987-10-02 | 1987-10-02 | Method of manufacturing thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62248142A JPH0758529B2 (en) | 1987-10-02 | 1987-10-02 | Method of manufacturing thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0192912A JPH0192912A (en) | 1989-04-12 |
| JPH0758529B2 true JPH0758529B2 (en) | 1995-06-21 |
Family
ID=17173848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62248142A Expired - Fee Related JPH0758529B2 (en) | 1987-10-02 | 1987-10-02 | Method of manufacturing thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0758529B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5912436A (en) * | 1982-07-13 | 1984-01-23 | Fujitsu Ltd | Formation of thin insulating layer |
| JPS628321A (en) * | 1985-07-04 | 1987-01-16 | Fuji Photo Film Co Ltd | Production of thin film magnetic head |
| JPS6216221A (en) * | 1985-07-16 | 1987-01-24 | Alps Electric Co Ltd | Production of thin film magnetic head |
-
1987
- 1987-10-02 JP JP62248142A patent/JPH0758529B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0192912A (en) | 1989-04-12 |
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