JPH0758694B2 - Plasma deposition equipment - Google Patents
Plasma deposition equipmentInfo
- Publication number
- JPH0758694B2 JPH0758694B2 JP63156163A JP15616388A JPH0758694B2 JP H0758694 B2 JPH0758694 B2 JP H0758694B2 JP 63156163 A JP63156163 A JP 63156163A JP 15616388 A JP15616388 A JP 15616388A JP H0758694 B2 JPH0758694 B2 JP H0758694B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- sample
- film
- film forming
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000008021 deposition Effects 0.000 title description 9
- 239000010408 film Substances 0.000 claims description 47
- 230000005291 magnetic effect Effects 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000005389 magnetism Effects 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 description 12
- 239000002245 particle Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001706 oxygenating effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体、金属、絶縁体等の被成膜試料（以下
単に試料と呼ぶ）の表面に対し、電子サイクロトロン共
鳴（以下、ECR）プラズマを用いて膜堆積を施すプラズ
マ成膜装置の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to electron cyclotron resonance (hereinafter referred to as ECR) with respect to the surface of a sample (hereinafter simply referred to as sample) on which a film is deposited such as a semiconductor, a metal, or an insulator. The present invention relates to an improvement in a plasma film forming apparatus that performs film deposition using plasma.
（従来の技術） ECRプラズマを利用するプラズマ成膜装置は半導体デバ
イスの製造に広く活用されるようになってきた。(Prior Art) A plasma film forming apparatus using ECR plasma has been widely used for manufacturing semiconductor devices.
特開昭61−13634号公報には、ECRプラズマ発生源と被処
理物との間に、少なくとも一つのカスプ型反転磁界を備
え、プラズマ中の荷電粒子をこのカスプ型磁界によって
特定の領域に閉じ込めることで、被処理物を活性種だけ
によって処理するプラズマ処理装置が開示されている。
荷電粒子の衝撃によって受ける被処理物のダメージを回
避したものである。In Japanese Patent Laid-Open No. 61-13634, at least one cusp-type reversal magnetic field is provided between an ECR plasma generation source and an object to be processed, and charged particles in plasma are confined in a specific region by the cusp-type magnetic field. Therefore, a plasma processing apparatus that processes an object to be processed with only active species is disclosed.
This avoids damage to the object to be processed, which is caused by the impact of charged particles.
この種の装置の概略を第３図（装置はガス導入系および
排気系を除けば、軸30につき回転対称系である）を用い
て説明すると、処理用ガスはガス導入口11あるいは11と
11′の両者を通して真空容器１′内に導入され、マイク
ロ波は導波管４を通して、この真空容器の一部である放
電管部１″内に導かれる。放電管部１″の内部には、あ
らかじめ、ECR共鳴条件を満たすような磁界が電磁コイ
ル５によって設定されているため、ここにECRプラズマ
が発生する。An outline of an apparatus of this type will be described with reference to FIG. 3 (the apparatus is a rotationally symmetric system about the shaft 30 except for the gas introduction system and the exhaust system), and the processing gas is the gas introduction port 11 or 11.
Microwaves are introduced into the vacuum vessel 1'through both 11 ', and guided through the waveguide 4 into the discharge tube portion 1 "which is a part of the vacuum vessel. Inside the discharge tube portion 1" Since a magnetic field satisfying the ECR resonance condition is set in advance by the electromagnetic coil 5, ECR plasma is generated here.
ECRプラズマ中の荷電粒子は電磁コイル５によって形成
される磁力線18に沿って輸送されるが、試料台７および
その上の試料８の背後には電磁コイル６が設置されてい
て、この電磁コイル６はさきの電磁コイル５とは方向が
等しく向きが反対な磁界を作るように励磁されているた
め、試料８と放電管部１″の間にはカスプ型磁界15が形
成されておりプラズマ中の荷電粒子はここで閉じ込めら
れる。The charged particles in the ECR plasma are transported along the magnetic field lines 18 formed by the electromagnetic coil 5, and the electromagnetic coil 6 is installed behind the sample stage 7 and the sample 8 above it. Since it is excited so as to create a magnetic field whose direction is the same as the direction of the electromagnetic coil 5 and is opposite to the direction, a cusp-type magnetic field 15 is formed between the sample 8 and the discharge tube portion 1 ″, Charged particles are trapped here.
従って、試料８の表面には、プラズマ中から荷電粒子を
取り去った中性活性種20だけが照射されることになる。
膜堆積を専らこの中性活性種で行えば、試料８は荷電粒
子の衝撃損傷を逃れることができる。Therefore, the surface of the sample 8 is irradiated with only the neutral active species 20 from which charged particles have been removed from the plasma.
If the film deposition is performed exclusively by the neutral active species, the sample 8 can escape the impact damage of the charged particles.
（発明が解決しようとする問題点） しかし、中性活性種だけで膜堆積を行うための不具合も
生ずる。(Problems to be Solved by the Invention) However, there is also a problem in that film deposition is performed using only neutral active species.
即ち、中性活性種のみによる膜堆積の場合、電界の設定
により粒子を方向性よく効率的に試料に照射することが
困難であるため、高速に且つ異方性よく、精度よく、試
料表面に薄膜を形成することが困難である。That is, in the case of film deposition using only neutral active species, it is difficult to irradiate the sample with directivity and efficiency efficiently by setting the electric field. It is difficult to form a thin film.
（発明の目的） 本発明は、従来の装置における上記の問題を解決し、従
来と同じようにECRプラズマ中の中性活性種を使用した
ものでありながら、高速にかつ異方性よく、精度よく、
試料表面に薄膜を形成することを可能にしたプラズマ成
膜装置を提供することを目的とする。(Object of the Invention) The present invention solves the above-mentioned problems in the conventional apparatus, and uses neutral active species in ECR plasma as in the conventional method, but at a high speed, with good anisotropy, and with high accuracy. Often,
An object is to provide a plasma film forming apparatus capable of forming a thin film on the surface of a sample.
（問題点を解決するための手段） 本発明は、成膜用ガスを電子サイクロトロン共鳴によっ
てプラズマ化させるプラズマ室に隣接して、被成膜試料
を載置する試料台を設けかつ前記プラズマ室の磁界とは
方向が等しく磁性が反対の磁界が設けられた成膜室を備
え、該プラズマ室で生じたプラズマの活性種を用いて、
該被成膜試料の表面に所定の薄膜を作成するプラズマ成
膜装置において、前記被成膜試料の表面に対して、該成
膜の内容で決まる所定波長の光を部分的に照射して成膜
の異方性を実現する装置を備えるプラズマ成膜装置によ
って前記目的を達成したものである。(Means for Solving the Problems) The present invention provides a sample table on which a sample to be deposited is mounted, which is adjacent to a plasma chamber in which a film-forming gas is turned into plasma by electron cyclotron resonance. A film formation chamber provided with a magnetic field whose direction is equal to that of the magnetic field and whose magnetism is opposite to that of the magnetic field is obtained.
In a plasma film forming apparatus for forming a predetermined thin film on the surface of a sample to be formed, the surface of the sample to be formed is partially irradiated with light having a predetermined wavelength determined by the content of the film formation. The above object is achieved by a plasma film forming apparatus provided with an apparatus for realizing anisotropy of a film.
被成膜試料を、その被成膜表面に垂直な方向を回転軸と
して回転させる機構を備えるときは、本発明の機能を一
層充実したものにすることができる。The function of the present invention can be further enhanced by providing a mechanism for rotating the sample to be film-formed on the axis perpendicular to the film-forming surface as a rotation axis.
（作用） 成膜の内容で決まる所定波長の光を照射することで、成
膜の速度を高め、膜堆積に方向性を与えることができ、
異方性の成膜が実現する。また、試料を回転させること
で、成膜の均一性を高めたり、もしくは選択成膜機構を
付与することができる。(Function) By irradiating light with a predetermined wavelength determined by the content of film formation, the film formation speed can be increased and the film deposition can be given directionality.
Anisotropic film formation is realized. Further, by rotating the sample, it is possible to enhance the uniformity of film formation or provide a selective film formation mechanism.
（実施例） 次にこの発明の実施例を図を用いて詳細に説明する。(Embodiment) Next, an embodiment of the present invention will be described in detail with reference to the drawings.
第１図は本発明の第１実施例のプラズマ成膜装置の概略
の正面断面図である。装置の概要は第３図の従来のプラ
ズマ処理装置と同様であるが、ECRプラズマを発生させ
るプラズマ室１と、試料８を載置する試料台７を設けた
成膜室２との間にプラズマ引出し窓14が設けられて、プ
ラズマの発生を容易にしている。FIG. 1 is a schematic front sectional view of a plasma film forming apparatus according to a first embodiment of the present invention. The outline of the apparatus is the same as that of the conventional plasma processing apparatus shown in FIG. 3, but the plasma is provided between the plasma chamber 1 for generating the ECR plasma and the film forming chamber 2 provided with the sample table 7 on which the sample 8 is mounted. A drawer window 14 is provided to facilitate the generation of plasma.
また電磁コイル５と、試料８の背後に設置された電磁コ
イル６はそれぞれ強磁性体10で覆われており、カスプ型
磁界15が一層効果的に作られるようにしている。The electromagnetic coil 5 and the electromagnetic coil 6 installed behind the sample 8 are each covered with a ferromagnetic material 10 so that the cusp-type magnetic field 15 can be produced more effectively.
電磁コイル６に投入される電流は、カスプ型磁界を作る
ために、従来と同様に電磁コイル５の作る磁界とは方向
が等しく向きが反対の磁界を試料部に作るようになって
いるが、中性活性種の領域20を大きくする目的で電磁コ
イル５の作る磁界よりもやや大きいものにしてある。試
料８は中性活性種領域20内に置かれている。なお、図示
しない回転駆動機構によって、成膜中試料台７は軸30の
回りに回転するようになっている。In order to create a cusp-type magnetic field, the current applied to the electromagnetic coil 6 creates a magnetic field in the sample portion that has the same direction and opposite direction to the magnetic field created by the electromagnetic coil 5 as in the conventional case. It is made slightly larger than the magnetic field generated by the electromagnetic coil 5 for the purpose of enlarging the region 20 of the neutral active species. The sample 8 is placed in the neutral active species region 20. The sample stage 7 is rotated around the shaft 30 during film formation by a rotation drive mechanism (not shown).
第１図の装置が従来の装置と著しく異なる点は、新し
く、光源17と光導入窓18が設けられて、光源17から発せ
られた光線16が導入窓18を通して試料８の表面に所定波
長の光を照射するようになっていることである。The apparatus shown in FIG. 1 is remarkably different from the conventional apparatus in that a light source 17 and a light introducing window 18 are newly provided so that a light beam 16 emitted from the light source 17 passes through the introducing window 18 and has a predetermined wavelength on the surface of the sample 8. It is designed to emit light.
光源17としては、水銀ランプ、レーザーなど各種のもの
が目的とする成膜の内容に従って選択使用され、必要に
応じて、レンズ系やフィルター系が光源17と窓18の間に
介在させられる。As the light source 17, various ones such as a mercury lamp and a laser are selected and used according to the intended film formation, and a lens system and a filter system are interposed between the light source 17 and the window 18 as necessary.
この構成の本実施例の装置では、プラズマはカスプ型磁
界に荷電粒子が閉じ込められ除去され、中性活性種だけ
になって試料８に達するが、試料表面で光源17からの所
定波長の光線16の照射を受けるとき、この照射表面で特
に反応が高速となる。In the apparatus of this embodiment having this configuration, the charged particles are removed from the plasma by being trapped in the cusp-type magnetic field, and only the neutral active species reach the sample 8. When irradiated with, the reaction is particularly fast on this irradiated surface.
例えば、SiO2膜を作成する場合、ガス導入口11よりO2、
ガス導入口11′よりSiH4をそれぞれ導入し、光源として
波長250〜400nm付近で光強度の高いHg-Xeランプを用い
ると、カスプ型磁界で荷電粒子SiH4＋,Si＋,O＋，O2＋
等が除去された中性活性種Si＊，O2＊等のみが試料表面
で反応し成膜する。For example, when forming a SiO 2 film, O 2 from the gas inlet 11
When SiH 4 is introduced from each gas inlet 11 ′ and a Hg-Xe lamp with high light intensity around a wavelength of 250 to 400 nm is used as a light source, charged particles SiH 4 +, Si +, O +, O 2 + are generated by a cusp type magnetic field.
Only the neutral active species Si *, O 2 *, etc., from which the etc. have been removed react on the sample surface to form a film.
従ってこの構成の装置は、例えば、第１図ａの段差部の
壁面25のステップカバレッジの不良を修復する場合に特
に有利である。膜の堆積が光の照射された壁面だけで強
く進行するためである。Therefore, the apparatus of this configuration is particularly advantageous when, for example, the step coverage defect of the wall surface 25 of the step portion in FIG. 1A is repaired. This is because the film deposition strongly proceeds only on the wall surface irradiated with light.
試料８の回転は、膜の堆積を段差の壁面25の全面にまん
べんなく行なうのに効果がある。The rotation of the sample 8 is effective in uniformly depositing the film on the entire surface of the stepped wall surface 25.
第２図は、本発明の第２の実施例のプラズマ処理装置の
概略の正面断面図である。FIG. 2 is a schematic front sectional view of a plasma processing apparatus of the second embodiment of the present invention.
この装置の場合は、試料８を載置する試料台７が、プラ
ズマ引出し窓14の平面に対して垂直に配置されていて、
光源17からは試料８の表面に垂直に光源16を照射するよ
うになっている。In the case of this device, the sample table 7 on which the sample 8 is placed is arranged perpendicular to the plane of the plasma extraction window 14,
From the light source 17, the light source 16 is irradiated perpendicularly to the surface of the sample 8.
また、カスプ型磁界に閉じ込められた荷電粒子が成膜室
により侵入しないように、成膜室の前にメッシュ状のマ
イクロ波反射板21を設けている。Further, a mesh-shaped microwave reflection plate 21 is provided in front of the film forming chamber so that charged particles trapped in the cusp-type magnetic field do not enter the film forming chamber.
この第２の実施例の装置では、試料８の表面に垂直に光
線16が照射されているので、パターンの微細化、異方性
の向上、が達成される。即ち、第２図ａに示すように、
フォトレジスト27によて覆われた試料表面のうち、部分
的にフォトレジスト27に覆われていない面26にのみ光線
16を垂直に入射させれば、面26上に微細なパターンの膜
を異方性よく形成することができる。In the apparatus of the second embodiment, since the surface of the sample 8 is irradiated with the light beam 16 perpendicularly, the pattern is made finer and the anisotropy is improved. That is, as shown in FIG.
Of the sample surface covered by the photoresist 27, light rays are emitted only on the surface 26 that is not partially covered by the photoresist 27.
If 16 is incident vertically, a fine pattern film can be formed on the surface 26 with good anisotropy.
第１図の実施例の場合と同様に、試料８が回転すること
により、試料表面の全面にわたる均一な成膜が可能であ
る。As in the case of the embodiment of FIG. 1, by rotating the sample 8, it is possible to form a uniform film over the entire surface of the sample.
上記第１、第２実施例において、中性活性種の種類を変
えること、即ち導入するガス種を変えること、および照
射する光の波長を選ぶことで、SiO2膜以外の所望する薄
膜の形成を選択して行なうことが可能であることはいう
までもない。In the first and second embodiments described above, a desired thin film other than the SiO 2 film is formed by changing the kind of the neutral active species, that is, changing the introduced gas species and selecting the wavelength of the light to be irradiated. It goes without saying that it is possible to select and perform.
例えば、Si3N4の薄膜の形成では、反応ガスとしてSiH4
とN2を用いて、前に述べた波長250〜400nmの光強度の高
いHg-Xeランプの光を照射するようにする。また参考例
として、本発明の構成は、表面改質処理の一例である酸
化処理に応用することが可能である。即ち、O2ガスを導
入して酸素の活性種を発生させ、波長130〜400nmの重水
素ランプの光を照射すれば、表面酸化処理が達成でき
る。For example, when forming a thin film of Si 3 N 4 , SiH 4 is used as a reaction gas.
And N 2 are used to irradiate the light of the Hg-Xe lamp having a high light intensity of the wavelength of 250 to 400 nm described above. Further, as a reference example, the configuration of the present invention can be applied to an oxidation treatment which is an example of a surface modification treatment. That is, surface oxidation treatment can be achieved by introducing O 2 gas to generate active species of oxygen and irradiating with light of a deuterium lamp having a wavelength of 130 to 400 nm.
尚、特許請求の範囲にいう「部分的に照射して」の意味
であるが、これは、第１図ａのように段差部の壁面25を
部分的に照射したり、第２図ａのようにフォトレジスト
27の開口部である面26のみを部分的に照射したりすると
いう意味である。Incidentally, the meaning of "partially irradiate" in the claims is meant by partially irradiating the wall surface 25 of the stepped portion as shown in FIG. As photoresist
This means that only the surface 26 that is the opening of 27 is partially irradiated.
（発明の効果） 本発明は、従来と同じようにECRプラズマ中の中性活性
種を使用し荷電粒子による試料の照射損傷を十分に抑制
しながら、高速にかつ異方性よく、精度よく、試料表面
に薄膜を形成することを可能にした新規なプラズマ成膜
装置を提供する効果がある。(Effects of the Invention) The present invention uses a neutral active species in ECR plasma as in the prior art to sufficiently suppress irradiation damage to a sample due to charged particles, while at high speed and with good anisotropy and accuracy, There is an effect of providing a novel plasma film forming apparatus capable of forming a thin film on the surface of a sample.
第１図は本発明の第１実施例のプラズマ成膜装置の概略
の正面断面図である。 第１図ａは膜堆積を説明する図。 第２図は第２実施例のプラズマ成膜装置の概略の正面断
面図である。 第２図ａは膜堆積を説明する図。 第３図は従来のプラズマ処理装置の概略の正面断面図で
ある。 １…プラズマ室、２…成膜室、３…マイクロ波導入管、
４…導波管、5,6…電磁コイル、７…試料台、８…試
料、９…プラズマ室側壁、10…強磁性材料、11,11′…
ガス導入口、14…プラズマ引出し窓、15…カスプ型磁
界、16…光線、17…光源、18…窓、19…磁力線、20…中
性活性種領域、21…メッシュ状マイクロ波反射板。FIG. 1 is a schematic front sectional view of a plasma film forming apparatus according to a first embodiment of the present invention. FIG. 1a is a diagram for explaining film deposition. FIG. 2 is a schematic front sectional view of the plasma film forming apparatus of the second embodiment. FIG. 2a is a diagram for explaining film deposition. FIG. 3 is a schematic front sectional view of a conventional plasma processing apparatus. 1 ... Plasma chamber, 2 ... Film forming chamber, 3 ... Microwave introducing tube,
4 ... Waveguide, 5, 6 ... Electromagnetic coil, 7 ... Sample stage, 8 ... Sample, 9 ... Plasma chamber side wall, 10 ... Ferromagnetic material, 11, 11 '...
Gas inlet port, 14 ... Plasma extraction window, 15 ... Cusp magnetic field, 16 ... Ray, 17 ... Light source, 18 ... Window, 19 ... Magnetic field line, 20 ... Neutral active species region, 21 ... Mesh microwave reflector.
Claims (2)
ってプラズマ化させるプラズマ室に隣接して、被成膜試
料を載置する試料台を設けかつ前記プラズマ室の磁界と
は方向が等しく磁性が反対の磁界が設けられた成膜室を
備え、該プラズマ室で生じたプラズマの活性種を用い
て、該被成膜試料の表面に所定の薄膜を作成するプラズ
マ成膜装置において、前記被成膜試料の表面に対して、
該成膜の内容で決まる所定波長の光を部分的に照射して
成膜の異方性を実現する装置を備えたことを特徴とする
プラズマ成膜装置。1. A sample stage for mounting a sample to be deposited is provided adjacent to a plasma chamber for converting a film-forming gas into plasma by electron cyclotron resonance, and has the same direction as the magnetic field of the plasma chamber and opposite magnetism. In the plasma film forming apparatus, which comprises a film forming chamber provided with a magnetic field, and which forms a predetermined thin film on the surface of the film forming sample by using active species of plasma generated in the plasma chamber. For the surface of the sample,
A plasma film forming apparatus comprising a device for partially irradiating light having a predetermined wavelength determined by the contents of the film formation to realize anisotropy of film formation.
な方向を回転軸として回転させる機構を備えたことを特
徴とする特許請求の範囲第１項記載のプラズマ成膜装
置。2. The plasma film forming apparatus according to claim 1, further comprising a mechanism for rotating the film forming sample with a rotation axis in a direction perpendicular to the film forming surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63156163A JPH0758694B2 (en) | 1988-06-24 | 1988-06-24 | Plasma deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63156163A JPH0758694B2 (en) | 1988-06-24 | 1988-06-24 | Plasma deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH025523A JPH025523A (en) | 1990-01-10 |
| JPH0758694B2 true JPH0758694B2 (en) | 1995-06-21 |
Family
ID=15621728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63156163A Expired - Fee Related JPH0758694B2 (en) | 1988-06-24 | 1988-06-24 | Plasma deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0758694B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5669316A (en) * | 1993-12-10 | 1997-09-23 | Sony Corporation | Turntable for rotating a wafer carrier |
| JPH0822979A (en) * | 1994-07-07 | 1996-01-23 | Nec Corp | Method and apparatus for substance treatment |
| WO2026033603A1 (en) * | 2024-08-05 | 2026-02-12 | 株式会社Kokusai Electric | Substrate processing device, plasma generation method, manufacturing method of semiconductor device and program |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6113634A (en) * | 1984-06-29 | 1986-01-21 | Hitachi Ltd | plasma processing equipment |
| JPS61141141A (en) * | 1984-12-14 | 1986-06-28 | Hitachi Ltd | Dry etching device |
| JPS62237729A (en) * | 1986-04-08 | 1987-10-17 | Toshiba Corp | Dry etching method for silicon oxide |
| JPS6327022A (en) * | 1986-07-21 | 1988-02-04 | Hitachi Ltd | Microwave plasma processing equipment |
-
1988
- 1988-06-24 JP JP63156163A patent/JPH0758694B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH025523A (en) | 1990-01-10 |
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