JPH0759647B2 - Method for homogenizing low-temperature plasma - Google Patents
Method for homogenizing low-temperature plasmaInfo
- Publication number
- JPH0759647B2 JPH0759647B2 JP63052429A JP5242988A JPH0759647B2 JP H0759647 B2 JPH0759647 B2 JP H0759647B2 JP 63052429 A JP63052429 A JP 63052429A JP 5242988 A JP5242988 A JP 5242988A JP H0759647 B2 JPH0759647 B2 JP H0759647B2
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- plasma
- electrode
- temperature plasma
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 14
- 239000004744 fabric Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000011282 treatment Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009990 desizing Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
Landscapes
- Treatment Of Fiber Materials (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は，有機材料，無機材料等の表面処理等に利用さ
れる低温プラズマ処理において，高周波放電により発生
する低温プラズマを均一化する方法に関するものであ
る。Description: TECHNICAL FIELD The present invention relates to a method for homogenizing low-temperature plasma generated by high-frequency discharge in low-temperature plasma processing used for surface treatment of organic materials, inorganic materials and the like. It is a thing.
（従来の技術） 近年，半導体，金属，有機材料，無機材料等の表面処理
や薄膜形成等に，低圧力下での高周波放電によるプラズ
マが利用されている。プラズマ処理効果の１つとして，
例えば，布帛等の低温プラズマ雰囲気中での処理によ
り，糊抜，精練あるいは仕上加工効果が得られることが
知られている。これらの処理のための内部電極型低温プ
ラズマ処理装置は，例えば，「繊維機械学会誌」第38
巻,No.4,198〜199頁（1985），特公昭60−31937号，特
公昭60−11149号，特公昭60−11150号公報等に紹介され
ている。これらの装置においては，基本的には真空を保
持し得るようにした処理室内にプラズマ発生電極を設置
し，外部に設置した高周波電源装置より処理室壁を貫通
して，大気中から真空中の電極へと高周波電力を供給す
るための電路が必要であった。(Prior Art) In recent years, plasma by high frequency discharge under low pressure has been used for surface treatment and thin film formation of semiconductors, metals, organic materials, inorganic materials and the like. As one of the plasma processing effects,
For example, it is known that a desizing, scouring or finishing effect can be obtained by treating a cloth or the like in a low temperature plasma atmosphere. An internal electrode type low temperature plasma processing apparatus for these treatments is disclosed in, for example, “Journal of Textile Machinery Society”, 38th.
Vol. 4, No. 4, pages 198 to 199 (1985), Japanese Patent Publication No. 60-31937, Japanese Patent Publication No. 60-11149, Japanese Patent Publication No. 60-11150. In these devices, basically, a plasma generating electrode is installed in a processing chamber that is capable of holding a vacuum, and a high frequency power supply device installed outside penetrates the processing chamber wall to remove the air from the atmosphere to the vacuum. An electric circuit was required to supply high frequency power to the electrodes.
このような装置の場合，処理室壁や処理室内の金属類と
電路との間でプラズマが発生し，これにより著しい電力
損失が生じるという問題があった。In the case of such an apparatus, there is a problem that plasma is generated between the processing chamber wall and the metal inside the processing chamber and the electric path, which causes significant power loss.
本出願人は，このような問題を解決する方法として，特
願昭61−266188号（特開昭63−120163号）にて外部がシ
ールドされた給電線を用いる方法を提案している。The applicant of the present application has proposed a method of using a power supply line shielded from the outside in Japanese Patent Application No. 61-266188 (Japanese Patent Laid-Open No. 63-120163) as a method for solving such a problem.
（発明が解決しようとする課題） 同軸ケーブルあるいは平衡型ケーブル等の外部がシール
ドされたケーブルを給電線として用いて，プラズマ発生
電極の一端部に接続した内部電極型低温プラズマ処理装
置において，給電側とその反対側では強度が異なり，処
理効果も不均一であった。特に，布帛やフィルム等の処
理の場合，大面積あるいは大容積のプラズマが要求さ
れ，工業規模では装置が大型になるが，均一で大規模な
プラズマを高周波放電で発生することは，周波数が高く
なり，波長が短くなるように，あるいは装置が大型にな
るとともに困難になってくる。(Problems to be Solved by the Invention) In an internal electrode type low temperature plasma processing apparatus in which an externally shielded cable such as a coaxial cable or a balanced type cable is used as a power supply line and is connected to one end of a plasma generating electrode, On the other side, the strength was different and the treatment effect was non-uniform. In particular, in the case of processing fabrics and films, a large area or a large volume of plasma is required, and the apparatus becomes large on an industrial scale, but the generation of uniform and large-scale plasma by high-frequency discharge has a high frequency. It becomes difficult as the wavelength becomes shorter or the device becomes larger.
上記のような外部がシールドされた給電線を一端縁部へ
接続したプラズマ発生電極面上の高周波の動きを考える
と，給電線が接続される電極の端縁部（以下，給電端部
という。）から高周波の進行（進行波）が始まるが，反
対側の端縁部（以下，終端部という。）では電路が開放
されているため，到達した高周波は反射され，逆方向に
進む。この反射波と進行波が電極面上で合成され，定在
波が生じる。電極の終端部は，電気的には開放端である
ため，電流は流れ得ず，電流の有する磁界のエネルギは
すべて電界のエネルギーに変わり，従って，電圧は進行
波の２倍の値となり，給電端部に向かって電圧が降下す
る。従って，電極終端部で発生するプラズマが最大で，
給電端部に向かって弱くなり，プラズマ強度に勾配が生
じる。この勾配が生じることは，電極の終端部開放の場
合避けられない現象である。Considering the high-frequency movement on the surface of the plasma generating electrode in which the externally shielded power supply line is connected to one end edge, the edge of the electrode to which the power supply line is connected (hereinafter referred to as the power supply end). ), The traveling of the high frequency begins. However, since the electric path is open at the opposite edge (hereinafter referred to as the terminal), the arriving high frequency is reflected and travels in the opposite direction. The reflected wave and the traveling wave are combined on the electrode surface to generate a standing wave. Since the terminal end of the electrode is an electrically open end, no current can flow, and the energy of the magnetic field possessed by the current is all converted to the energy of the electric field. Therefore, the voltage becomes twice the value of the traveling wave, and the power is fed. The voltage drops towards the edges. Therefore, the maximum plasma generated at the electrode end is
It becomes weaker toward the power supply end and a gradient occurs in the plasma intensity. The occurrence of this gradient is an unavoidable phenomenon when the terminal end of the electrode is opened.
本発明は，上記のような問題点を解決するものであっ
て，大規模なプラズマ発生電極を用いた低温プラズマ発
生装置でも，均一かつ効率的な処理効果を得ることがで
きる低温プラズマの均一化方法を提供しようとするもの
である。The present invention solves the above-mentioned problems, and even in a low-temperature plasma generator using a large-scale plasma generating electrode, uniform and efficient treatment effect of low-temperature plasma can be obtained. It is intended to provide a method.
なお，本発明において大規模なプラズマ発生電極とは，
電極の幅および長さが高周波の波長（λ）のおよそ1/50
以上のものをいう。また，均一とは，不均一さが実用上
差し支えない位に小さいという意味である。In the present invention, the large-scale plasma generating electrode means
The width and length of the electrode is approximately 1/50 of the high frequency wavelength (λ)
The above is said. Further, “uniform” means that the non-uniformity is so small that there is no practical problem.
（課題を解決するための手段） 上記のような問題点を解決する方法について，給電線の
接続方法を種々検討した結果，プラズマ発生電極の両端
部に給電線を接続することによって，非常に均一な低温
プラズマを発生させることができることを見出し，本発
明に到達した。(Means for Solving the Problems) As a method for solving the above-mentioned problems, as a result of examining various connection methods of the power supply line, it was found that by connecting the power supply line to both ends of the plasma generating electrode, it was possible to obtain a very uniform distribution. The present invention has been accomplished by discovering that a low temperature plasma can be generated.
すなわち，本発明は，内部電極高周波放電型低温プラズ
マ処理装置を用いて低温プラズマ処理を行うに際し，高
周波電源装置と内部電極の両端縁部を外部が接地シール
ドされた給電線により接続して給電することを特徴とす
る低温プラズマの均一化方法を要旨とするものである。That is, according to the present invention, when performing low temperature plasma processing using the internal electrode high frequency discharge type low temperature plasma processing apparatus, power is supplied by connecting the both end edges of the high frequency power supply apparatus and the internal electrode with a power supply line having an external ground shield. The gist is a method for homogenizing low-temperature plasma, which is characterized by the above.
本発明の低温プラズマ処理装置は，一定間隔を隔てて対
向する高電圧印加電極と接地電極とからなるプラズマ発
生電極を真空容器内に設置し，前記プラズマ発生電極へ
高周波電力を供給するため，高周波電源装置より外部が
接地シールドされた給電線を用い，その給電線の内部導
体を高電圧印加電極に，外部導体を接地電極に各々最短
距離で前記プラズマ発生電極の両端縁部に各々接続して
給電する。このとき，外部がシールドされた給電線とし
ては，一般的には同軸ケーブルあるいは平衡型ケーブル
等の外部が接地シールドされたケーブルを使用する。In the low temperature plasma processing apparatus of the present invention, a plasma generating electrode composed of a high voltage applying electrode and a ground electrode facing each other at a constant interval is installed in a vacuum container, and high frequency power is supplied to the plasma generating electrode. Use a power supply line that is grounded from the outside of the power supply unit, connect the inner conductor of the power supply line to the high-voltage applying electrode, and connect the outer conductor to the ground electrode at the shortest distance to both edges of the plasma generating electrode. Supply power. At this time, as the externally shielded power supply line, a cable such as a coaxial cable or a balanced type cable having an externally grounded shield is generally used.
各々の給電ケーブルに独立した整合回路を組み込むこと
によって，発生するプラズマ強度をコントロールし，電
極間の幅方向のプラズマ強度の均一性を向上させること
が容易となる。By incorporating an independent matching circuit in each power supply cable, it becomes easy to control the generated plasma intensity and improve the uniformity of the plasma intensity between the electrodes in the width direction.
以下，図面を用いて本発明の実施の一例について詳細に
説明する。Hereinafter, an example of an embodiment of the present invention will be described in detail with reference to the drawings.
第１図は，本発明を実施するプラズマ発生電極を用いた
シート状物処理の低温プラズマ処理装置の一例を示す。
第１図（Ａ），（Ｂ）において，真空を保持得るように
した処理室（11）内に，垂直状に立設した高電圧印加電
極板（12）の両側に，一定間隔を隔てて前記高電圧印加
電極（12）より面積が大きい接地電極板（13a），（13
b）を平行に対向して配置したプラズマ発生電極（14）
が配設され，高周波電源装置（15）から送られる高周波
電力が，整合器（16）から，外部が接地シールドされた
同軸ケーブル（または平衡型ケーブル）からなる給電線
（17），（18）を経て，前記プラズマ発生電極（14）の
上部両端縁部に給電線（17），（18）が接続され，前記
プラズマ発生電極（14）へ給電される。すなわち，外部
がシールドされた同軸ケーブルからない給電線（17），
（18）の外部導体，すなわち，シールド側導体（17
a），（17b），（18a），（18b）が各々対応する接地電
極板（13a），（13b）に，また，内部導体（17c），（1
8c）が高圧印加電極板（12）に，いずれも最短距離で接
続されている。第１図の給電線（17），（18）は２本並
列に接続している。さらに，処理室（11）内は，被処理
シート状物（19）を真空シールされた入口（20a）から
供給ローラ（21a）により送り込み，ガイドローラ（22
a），（22b），（22c），（22d），（22e），（22f），
（22g）を経て，両電極（12），（13a）間および（1
2），（13b）間を通過させて，同じく真空シールされた
出口（20b）から巻取るローラ（21b）により引出して巻
取るように配備する。また，処理室（11）へは排気口
（23a）から排出し，所定の圧力を保ちつつ，空気，酸
素，窒素等の処理ガスを給気口（23b）から連続供給す
る。FIG. 1 shows an example of a low temperature plasma processing apparatus for processing a sheet-like material using a plasma generating electrode according to the present invention.
In FIGS. 1 (A) and 1 (B), a high-voltage applying electrode plate (12) vertically installed in a processing chamber (11) capable of maintaining a vacuum is provided at regular intervals. Ground electrode plates (13a), (13) having a larger area than the high voltage applying electrode (12).
Plasma generating electrodes (14) with b) facing each other in parallel
The high-frequency power sent from the high-frequency power supply device (15) is provided with a power supply line (17), (18) consisting of a coaxial cable (or a balanced type cable) whose ground is shielded from the matching device (16). After that, power supply lines (17) and (18) are connected to the upper end edges of the plasma generation electrode (14) to supply power to the plasma generation electrode (14). That is, the feed line (17), which is not a coaxial cable whose outside is shielded,
The outer conductor of (18), that is, the shield side conductor (17
a), (17b), (18a), and (18b) correspond to the corresponding ground electrode plates (13a) and (13b), respectively, and the internal conductors (17c) and (1
8c) is connected to the high voltage application electrode plate (12) in the shortest distance. Two feeders (17) and (18) in Fig. 1 are connected in parallel. Further, in the processing chamber (11), the sheet-like material (19) to be processed is fed from a vacuum-sealed inlet (20a) by a supply roller (21a), and is guided by a guide roller (22).
a), (22b), (22c), (22d), (22e), (22f),
After passing through (22g), between both electrodes (12) and (13a) and (1
2) Pass through the space between (13b) and (13b), and the roller (21b) is also wound from the vacuum-sealed outlet (20b) to be drawn and wound. Further, the processing chamber (11) is discharged from the exhaust port (23a), and the processing gas such as air, oxygen and nitrogen is continuously supplied from the supply port (23b) while maintaining a predetermined pressure.
上記の低温プラズマ処理装置を使用して，ポリエステル
加工糸織物を下記の処理条件で低温プラズマ処理した。Using the above-mentioned low temperature plasma processing apparatus, the polyester processed yarn fabric was subjected to low temperature plasma processing under the following processing conditions.
被処理布帛 ポリエステル加工糸織物（経150D,110本／吋；緯度150D
×2,55本／吋）150cm幅 処理ガス ……酸素 処理ガス流量 ……４/min 真空度 ……0.5Torr 処理速度 ……100cm/min 高周波電源装置周波数 ……13.56MHz 高周波電源装置自由空間波長 ……22m 高周波電源装置出力 ……2KW 電極寸法（接地電極） 長さ900mm,幅2000mm 電極間隔 ……60mm また，比較例として，第１図の装置を前記給電線（18）
を接続しない状態で用いて，上記実施例と同一布帛を同
一プラズマ処理条件で処理した。Cloth to be treated Polyester processed yarn fabric (warp 150D, 110 / inch; latitude 150D
× 2,55 lines / inch) 150 cm width Process gas …… Oxygen Process gas flow rate …… 4 / min Vacuum degree …… 0.5 Torr Process speed …… 100 cm / min High frequency power supply frequency …… 13.56 MHz High frequency power supply free space wavelength …… 22m High frequency power supply output …… 2KW Electrode size (ground electrode) Length 900mm, Width 2000mm Electrode spacing …… 60mm Also, as a comparative example, the device of FIG.
The same fabric as that of the above-mentioned example was treated under the same plasma treatment condition by using the same as the above example.
上記実施例および比較例で得た処理織物の吸水性を,JIS
L−1096（バイレツク法）により織物の幅方向に測定し
た。その結果は第２図に示すとおりであり，第１図の本
発明の方法の装置を使用した実施例の場合，織物の幅方
向に均一でかつ優れた吸水性能が付与された。これに対
して，給電線を一端縁部へ接続した比較例の場合，織物
の吸水性能は幅方向に不均一で，プラズマ発生電極の給
電線を接続した給電端部に対応する端（耳）部が最も低
く，反対側端部に向かって高くなっており，好ましくな
かった。これらの結果からも明らかなごとく，上記実施
例の低温プラズマ処理装置は，プラズマ発生状態が極め
て均一かつ高効率であり，均一なプラズマ処理を行うこ
とができる。The water absorbency of the treated fabrics obtained in the above Examples and Comparative Examples was determined by JIS
It was measured in the width direction of the woven fabric by L-1096 (Bayretk method). The results are shown in FIG. 2, and in the case of the example using the apparatus of the method of the present invention in FIG. 1, uniform and excellent water absorption performance was imparted in the width direction of the fabric. On the other hand, in the case of the comparative example in which the power supply line is connected to one edge, the water absorption performance of the fabric is non-uniform in the width direction, and the end (ear) corresponding to the power supply end to which the power supply line of the plasma generating electrode is connected. The area was lowest, and the height was higher toward the opposite end, which was not preferable. As is clear from these results, the low-temperature plasma processing apparatus of the above-described embodiment has an extremely uniform and highly efficient plasma generation state and can perform uniform plasma processing.
第１図で示す実施の一例では，給電線は２本並列接続し
ているが，必要に応じて複数本接続してもよい。In the example of the embodiment shown in FIG. 1, two power supply lines are connected in parallel, but a plurality of power supply lines may be connected if necessary.
このようにして，安価な給電線を利用して給電を行うこ
とができて，高周波電源装置から高周波電力を効率よく
プラズマ発生電極へ供給することができ，発生するプラ
ズマの均一性を高めることができる。In this way, power can be supplied using an inexpensive power supply line, high-frequency power can be efficiently supplied from the high-frequency power supply device to the plasma generating electrode, and the uniformity of generated plasma can be improved. it can.
（作 用） 本発明において，低温プラズマ処理装置のプラズマ発生
電極の両端縁部に外部が接地シールドされた給電線を接
続して給電すると，プラズマ発生電極上の電流と電圧の
分布が最適化されるようになり，従って，プラズマ発生
電極で発生するプラズマが均一化される。給電線を複数
本並列接続して用いる場合には，プラズマ発生電極への
接続箇所は一点で接続する必要ななく，給電点を分散さ
せてプラズマの均一化をはかることができる。この場
合，一般に各給電線のプラズマ発生電極への接続点は，
電極上の各点への距離が最短とない位置が望ましい。こ
のようにして，高周波電源装置からプラズマ発生電極へ
の高周波電力を効率よく供給することができ，均一性の
高いプラズマを発生することができる。(Operation) In the present invention, when power is supplied by connecting a feed line having an external ground shield to both end edges of the plasma generating electrode of the low temperature plasma processing apparatus, the distribution of current and voltage on the plasma generating electrode is optimized. As a result, the plasma generated at the plasma generating electrode is made uniform. When using a plurality of power supply lines connected in parallel, it is not necessary to connect the plasma generation electrodes at one point, and the power supply points can be dispersed to make the plasma uniform. In this case, generally, the connection point of each power supply line to the plasma generating electrode is
It is desirable that the distance to each point on the electrode is not the shortest. In this way, high-frequency power can be efficiently supplied from the high-frequency power supply device to the plasma generation electrode, and highly uniform plasma can be generated.
（発明の効果） 本発明によれば，プラズマ発生電極上に極めて均一なプ
ラズマを高効率で得ることができるので，布帛やフイル
ム等の広幅のシート状物を，極めて均一かつ効率的に低
温プラズマ処理することができる。(Effects of the Invention) According to the present invention, an extremely uniform plasma can be obtained with high efficiency on the plasma generating electrode, so that a wide sheet-like material such as a cloth or a film can be extremely uniformly and efficiently subjected to low-temperature plasma. Can be processed.
第１図は，本発明で用いる低温プラズマ処理装置の一例
を示し，（Ａ）はその概略側面図，（Ｂ）は（Ａ）のＩ
−Ｉ線断面図であり，また，第２図は，低温プラズマ処
理織物の吸水性能値を示す線図である。 図中の（11）は処理室，（12）は高電圧印加電極板，
（13a），（13b）は接地電極板，（14）はプラズマ発生
電極，（15）は高周波電源装置，（16）は整合器，（1
7），（18）は給電線をそれぞれ示す。FIG. 1 shows an example of a low temperature plasma processing apparatus used in the present invention, (A) is a schematic side view thereof, and (B) is I of (A).
FIG. 2 is a cross-sectional view taken along line I, and FIG. 2 is a graph showing water absorption performance values of the low temperature plasma treated fabric. In the figure, (11) is a processing chamber, (12) is a high voltage application electrode plate,
(13a) and (13b) are ground electrode plates, (14) is a plasma generating electrode, (15) is a high frequency power supply device, (16) is a matching device, and (1)
7) and (18) show feeder lines, respectively.
Claims (1)
置を用いて低温プラズマ処理を行うに際し，高周波電源
装置と内部電極の両端縁部を外部が接地シールドされた
給電線により接続して給電することを特徴とする低温プ
ラズマの均一化方法。1. When performing low temperature plasma processing using an internal electrode high frequency discharge type low temperature plasma processing apparatus, power is supplied by connecting both ends of the high frequency power supply apparatus and the internal electrode with a power supply line having an external ground shield. A method for homogenizing low-temperature plasma, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63052429A JPH0759647B2 (en) | 1988-03-04 | 1988-03-04 | Method for homogenizing low-temperature plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63052429A JPH0759647B2 (en) | 1988-03-04 | 1988-03-04 | Method for homogenizing low-temperature plasma |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01225642A JPH01225642A (en) | 1989-09-08 |
| JPH0759647B2 true JPH0759647B2 (en) | 1995-06-28 |
Family
ID=12914521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63052429A Expired - Lifetime JPH0759647B2 (en) | 1988-03-04 | 1988-03-04 | Method for homogenizing low-temperature plasma |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0759647B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024156756A1 (en) * | 2023-01-25 | 2024-08-02 | TRUMPF Hüttinger GmbH + Co. KG | Connection assembly, plasma process flow supply system, plasma process system, and method for operating a plasma process |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4623422B2 (en) * | 2005-03-17 | 2011-02-02 | 富士電機システムズ株式会社 | Plasma processing equipment |
-
1988
- 1988-03-04 JP JP63052429A patent/JPH0759647B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024156756A1 (en) * | 2023-01-25 | 2024-08-02 | TRUMPF Hüttinger GmbH + Co. KG | Connection assembly, plasma process flow supply system, plasma process system, and method for operating a plasma process |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01225642A (en) | 1989-09-08 |
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