JPH0761719B2 - Charging device - Google Patents
Charging deviceInfo
- Publication number
- JPH0761719B2 JPH0761719B2 JP61162077A JP16207786A JPH0761719B2 JP H0761719 B2 JPH0761719 B2 JP H0761719B2 JP 61162077 A JP61162077 A JP 61162077A JP 16207786 A JP16207786 A JP 16207786A JP H0761719 B2 JPH0761719 B2 JP H0761719B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- charging device
- electrode
- thin plate
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G15/00—Apparatus for electrographic processes using a charge pattern
- G03G15/22—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20
- G03G15/32—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the charge pattern is formed dotwise, e.g. by a thermal head
- G03G15/321—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the charge pattern is formed dotwise, e.g. by a thermal head by charge transfer onto the recording material in accordance with the image
- G03G15/323—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the charge pattern is formed dotwise, e.g. by a thermal head by charge transfer onto the recording material in accordance with the image by modulating charged particles through holes or a slit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Dot-Matrix Printers And Others (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Electrophotography Using Other Than Carlson'S Method (AREA)
- Electron Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、帯電装置、特に、固体電子線発生装置を用い
た帯電装置に関するものである。Description: TECHNICAL FIELD The present invention relates to a charging device, and more particularly to a charging device using a solid-state electron beam generator.
従来、この種の固定電子線発生装置は、例えば、特公昭
54−30274号公報、特開昭54−111272号公報（米国特許
第4,259,678号明細書）、特開昭56−15529号公報（米国
特許第4,303,930号明細書）、あるいは、特開昭57−385
28号公報等に開示されている。Conventionally, this type of fixed electron beam generator is disclosed in, for example, Japanese Patent Publication
54-30274, JP-A-54-111272 (US Pat. No. 4,259,678), JP-A-56-15529 (US Pat. No. 4,303,930), or JP-A-57-385.
No. 28, etc.
以上のような従来のこの種の装置においては、放電を用
いた素子（例えば、米国特許第4,155,093号明細書な
ど）が知られているが、これら素子は、制御電圧が高
い、スパッタリングにより表面素子が破壊される。ある
いは、帯電面の線密度に限界がある等、種々の欠点があ
り、広く普及するに至っていない。In the conventional apparatus of this type as described above, elements using discharge (for example, US Pat. No. 4,155,093 specification) are known, but these elements have a high control voltage and are surface elements by sputtering. Is destroyed. Alternatively, there are various drawbacks such as the linear density of the charging surface being limited, and it has not become widespread.
本発明は、以上のような局面にかんがみて、従来にはな
かった全く新しい機能を備えた帯電装置を提供すること
により、超高精密な帯電パターンが得られると共に、要
すれば、各ドット毎に帯電量を制御することもできるよ
うにすることを目的としている。In view of the above situation, the present invention provides a charging device having a completely new function that has not been available in the past, thereby obtaining an ultra-high precision charging pattern, and if necessary, for each dot. The purpose is to be able to control the charge amount.
このため、本発明においては、複数個の固体電子線源を
配設した基板に対向して所定間隔で薄板を配設し、かつ
両板間の空間が実質的に真空となるように封止した帯電
装置の、上記薄板の一部を電子透過性部材で構成し、か
つ、薄板上には電極を設けて前記電子線源との間に所定
電圧を印加し、流出した電子を加速して帯電装置外に出
力させるよう構成することにより、前記目的を達成しよ
うとするものである。Therefore, in the present invention, the thin plates are arranged at a predetermined interval so as to face the substrate on which the plurality of solid-state electron beam sources are arranged, and the space between both plates is sealed so as to be substantially vacuum. In the charging device, a part of the thin plate is composed of an electron-transmissive member, and an electrode is provided on the thin plate to apply a predetermined voltage between the thin plate and the electron beam source to accelerate the leaked electrons. It is intended to achieve the above object by being configured to output to the outside of the charging device.
以上のような構成によって、高密度の固体電子線源によ
る帯電装置が形成され、従来にない超高精細な帯電パタ
ーンを形成することができ、また、要すれば、それぞれ
の電子線源を独立に制御することにより、ドット毎の帯
電量を選択的に制御することができる。With the above configuration, a charging device using a high-density solid-state electron beam source is formed, and it is possible to form an ultra-high-definition charging pattern that has never been seen in the past. By controlling to, it is possible to selectively control the charge amount for each dot.
以下に、本発明を実施例に基づいて説明する。第１〜３
図は、本発明原理による一実施例の説明図で、第１図
は、帯電装置の平面図、第２図および第３図は、それぞ
れ第１図のＸ−Ｘ線およびＹ−Ｙ線断面図矢視図であ
る。Hereinafter, the present invention will be described based on Examples. First to third
FIG. 1 is an explanatory view of an embodiment according to the principle of the present invention. FIG. 1 is a plan view of a charging device, and FIGS. 2 and 3 are cross-sectional views taken along line XX and YY of FIG. 1, respectively. FIG.
（構成） SUは、複数の固体電子線源EB1,EB2,EB3,……用の本体で
ある基板で、本実施例においては、ｎ形のシリコン基板
を用いている。EX1,EX2,EX3,……は、Ｘ方向の選択を行
う各Ｘ電極であり、これらEX1,EX2,EX3,……は、それぞ
れ、接点領域を介して、高ドープｎ形領域HD1,HD2,HD3,
……と接続されている。また、EYはＹ方向のＹ電極で、
各電極と同様に、接点領域を介して、高ドープｐ形通路
PPと接続されており、各Ｘ電極EX1,EX2,EX3,……とＹ電
極EYとにより、マトリックスを構成している。(Structure) SU is a substrate which is a main body for a plurality of solid-state electron beam sources EB1, EB2, EB3, ... In this embodiment, an n-type silicon substrate is used. EX1, EX2, EX3, ... are X electrodes for selecting in the X direction, and these EX1, EX2, EX3 ,. HD3,
... is connected to. EY is the Y electrode in the Y direction,
Highly doped p-type passage through contact area as well as each electrode
It is connected to PP and each X electrode EX1, EX2, EX3, ... And Y electrode EY form a matrix.
基板SU上には、絶縁層ILを介して、引出し電極PEが設け
られ、各電子線源EB1,EB2,EB3,……を形成している。ま
た、基板SUと相対向して所定の厚みを有するスペーサを
介して、薄板である表面板FPが配設され、表面板FP上に
は、引出し電極PEに対応する位置に、加速電極AEが配設
されると共に、各電子線源EB1,EB2,EB3,……に対応する
部位には、例えば、Ni等の金属薄膜やBN,SiCフィルム等
の電子透過性の部材が用いられて、いわゆる“電子窓”
を形成している。また、表面板FPに、A1等の金属薄膜を
用いることにより、加速電極AEと電子窓とを兼ねる方法
もある。The extraction electrode PE is provided on the substrate SU via the insulating layer IL to form the electron beam sources EB1, EB2, EB3, .... In addition, a surface plate FP, which is a thin plate, is disposed facing the substrate SU via a spacer having a predetermined thickness, and the acceleration electrode AE is provided on the surface plate FP at a position corresponding to the extraction electrode PE. In addition to being provided, an electron-transmissive member such as a metal thin film such as Ni or a BN or SiC film is used at a portion corresponding to each electron beam source EB1, EB2, EB3 ,. "Electronic window"
Is formed. There is also a method in which a metal thin film such as A1 is used for the surface plate FP so that it serves as both the acceleration electrode AE and the electron window.
基板SUと表面板FP間の空間は、電子を所望のエネルギー
に加速するために、真空とする必要があるが、通常は10
-5〜10-9Torr程度の圧力が望ましい。このような圧力を
維持し得るように、基板SUと表面板FPとを気密封止す
る。The space between the substrate SU and the face plate FP needs to be a vacuum to accelerate the electrons to the desired energy, but typically 10
A pressure of about -5 to 10 -9 Torr is desirable. The substrate SU and the surface plate FP are hermetically sealed so that such a pressure can be maintained.
（動作） 以上のような構成において、各Ｘ電極EX1,EX2,EX3,……
とＹ電極EYとに、電子なだれ増倍作用（アバランシェ・
マルチプリケーション）がｐ−ｎ接合部で生ずるような
電圧を印加し、同時に、引出し電極PEに、ある大きさの
電圧を与えることにより、各電子線源EB1,EB2,EB3,……
より電子e-（第２図）が流出する。(Operation) In the above configuration, each X electrode EX1, EX2, EX3, ...
Electron avalanche multiplication function (avalanche
The electron beam sources EB1, EB2, EB3, ... By applying a voltage such that the multiplication occurs at the pn junction, and at the same time, applying a voltage of a certain magnitude to the extraction electrode PE.
More Electronic e - (FIG. 2) flows out.
このとき、各Ｘ電極EX1,EX2,EX3,……を適当に選択する
ことにより、任意の各電子線源EB1,EB2,EB3,……より電
子を取出すことができる。これら電子流出のメカニズム
については、例えば、米国特許第4,259,678号明細書等
に詳述されているので、説明は省略する。At this time, electrons can be taken out from arbitrary electron beam sources EB1, EB2, EB3, ... By selecting the X electrodes EX1, EX2, EX3 ,. The mechanism of these electron outflows is described in detail in, for example, US Pat. No. 4,259,678, and the description thereof will be omitted.
加速電極AEに所定値の電圧を印加しておくことにより、
各電子線源EB1,EB2,EB3,……より流出した電子は、所望
のエネルギーまで加速され、表面板FPの電子窓を透過す
る。例えば、電子窓として、厚さ1mmのSiCを使用した場
合、加速電極AEに25kvを印加することにより、90％の電
子を帯電装置の外に取出すことができる。By applying a voltage of a predetermined value to the acceleration electrode AE,
The electrons flowing out from the electron beam sources EB1, EB2, EB3, ... Are accelerated to a desired energy and penetrate the electron window of the surface plate FP. For example, when 1 mm thick SiC is used as the electron window, 90% of electrons can be taken out of the charging device by applying 25 kv to the acceleration electrode AE.
（応用例） 第４図に、上記実施例帯電装置を、例えば静電記録装置
の誘電体ドラムDRに応用した要部斜視図を示す。本実施
例の帯電装置の表面板FPのＸ方向を、誘電体（感光体）
ドラムDRと軸線方向に平行に対向して配設することによ
り、ドラムDR上に、選択的に電荷ドットSCを付すること
ができる。本実施例においては、ピッチ５μｍでＸ方向
一次元に各電子線源EBが配設された素子を用いて、ほ
ぼ、ピッチ５μｍの超高精細な帯電パターンを誘電体ド
ラムDR上に形成し得、このため、超高精密記録および極
めて優れた階調のハードコピー記録が得られることが実
証されている。(Application Example) FIG. 4 shows a perspective view of a main part in which the charging device of the above-described embodiment is applied to, for example, a dielectric drum DR of an electrostatic recording device. The X direction of the surface plate FP of the charging device of this embodiment is set to the dielectric
By disposing the drum DR so as to face the drum DR in parallel with the axial direction, it is possible to selectively attach the charge dots SC on the drum DR. In this embodiment, an element in which each electron beam source EB is arranged one-dimensionally in the X direction with a pitch of 5 μm can be used to form an ultrahigh-definition charging pattern with a pitch of 5 μm on the dielectric drum DR. Therefore, it has been proved that ultra-high precision recording and hard copy recording with extremely excellent gradation can be obtained.
（他の実施例） 前記実施例においては、電子線源EBとして、ｐ−ｎ接合
の電子なだれ増倍作用を利用する形式の素子を用いた
が、本発明原理においては、電子流出機構自体ほ本質的
なものではなく、したがって、電子線源として、他の公
知のｐ−ｎ接合の負仕事関数（ネガティブ・ワーク・フ
ァンクション）を用いたものや電界放出（フィールド・
エミッション）形等の固体電子線源を用いても、同様の
効果が得られる。(Other Embodiments) In the above-described embodiments, the electron beam source EB is an element of the type that utilizes the electron avalanche multiplication effect of the pn junction, but in the principle of the present invention, the electron outflow mechanism itself is used. Therefore, it is not essential, and therefore, the electron beam source using the other known negative work function of a pn junction or the field emission (field
The same effect can be obtained by using a solid-state electron beam source such as an emission type.
また、前記実施例においては、各電子線源EB1,EB2,EB3,
……が、Ｘ方向に一次元アレイ状に配設された場合につ
いて説明したが、これら各電子線源を独立に制御するこ
とにより、また、２次元的に配設された電子線源をブロ
ック分割し、ブロック単位で独立して制御することによ
り、帯電パターンの各ドット毎の帯電量を選択的に制御
することができる。Further, in the above embodiment, each electron beam source EB1, EB2, EB3,
.. has been described as being arranged in a one-dimensional array in the X direction, but by controlling each of these electron beam sources independently, the two-dimensionally arranged electron beam sources are blocked. By dividing and controlling independently in block units, the charge amount for each dot of the charging pattern can be selectively controlled.
以上、説明してきたように、本発明によれば、高密度の
固体電子線源を用いて帯電装置を構成するようにしたた
め、従来では得られなかった超高精細な帯電パターンを
形成することが可能となり、また、要すれば、それぞれ
の帯電量を選択的に制御することも可能となった。As described above, according to the present invention, since the charging device is configured by using the high-density solid-state electron beam source, it is possible to form an ultra-high-definition charging pattern that has not been obtained in the past. It has become possible, and if necessary, it has become possible to selectively control the respective charge amounts.
第１図は、本発明に係る帯電装置の一実施例の平面図、
第２図および第３図は、それぞれ第１図のＸ−Ｘ線およ
びＹ−Ｙ線断面矢視図、第４図は、本実施例の応用例要
部斜視図である。 SU:基板 EB1,EB2,EB3,……：電子線源 FP:表面板（薄板） AE:加速電極FIG. 1 is a plan view of an embodiment of a charging device according to the present invention,
2 and 3 are sectional views taken along the line XX and YY of FIG. 1, respectively, and FIG. 4 is a perspective view of an essential part of an application example of this embodiment. SU: Substrate EB1, EB2, EB3, ...: Electron beam source FP: Surface plate (thin plate) AE: Accelerating electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中村 憲司 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 上里 泰生 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 袴田 勲 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (56)参考文献 特開 昭54−111272（ＪＰ，Ａ) 特開 昭56−15529（ＪＰ，Ａ) 実開 昭58−113953（ＪＰ，Ｕ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kenji Nakamura Kenji Nakamura 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Yasushi Kamisato 3-30-2 Shimomaruko, Ota-ku, Tokyo Kya Non-Incorporated (72) Inventor Isao Hakada 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Incorporated (56) Reference JP-A-54-111272 (JP, A) JP-A-56-15529 ( JP, A) Actual development Sho 58-113953 (JP, U)
Claims (2)
基板と対向して、所定間隔で薄板を設け、かつ、該薄板
と前記基板との間の空間が実質的に真空となるように封
止された帯電装置であって、前記薄板の一部を電子透過
性部材により構成すると共に、該薄板上に電極を配設
し、前記電子線源と該電極間に所定値の電圧を印加し、
該電子線源より流出した電子を加速して前記帯電装置外
に取出すよう構成したことを特徴とする帯電装置。1. A thin plate is provided at a predetermined interval so as to face a substrate on which a plurality of solid-state electron beam sources are arranged, and a space between the thin plate and the substrate is substantially vacuum. A charging device sealed so that a part of the thin plate is composed of an electron-transmissive member, an electrode is arranged on the thin plate, and a predetermined value is provided between the electron beam source and the electrode. Apply voltage,
A charging device configured to accelerate electrons flowing out from the electron beam source and take them out of the charging device.
制御することにより、選択的に帯電を行うよう構成した
ことを特徴とする特許請求の範囲第１項記載の帯電装
置。2. The charging device according to claim 1, wherein the plurality of electron beam sources are independently controlled to selectively perform charging.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61162077A JPH0761719B2 (en) | 1986-07-11 | 1986-07-11 | Charging device |
| US07/183,517 US4858062A (en) | 1986-06-04 | 1988-04-14 | Charging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61162077A JPH0761719B2 (en) | 1986-07-11 | 1986-07-11 | Charging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6319266A JPS6319266A (en) | 1988-01-27 |
| JPH0761719B2 true JPH0761719B2 (en) | 1995-07-05 |
Family
ID=15747645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61162077A Expired - Fee Related JPH0761719B2 (en) | 1986-06-04 | 1986-07-11 | Charging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0761719B2 (en) |
-
1986
- 1986-07-11 JP JP61162077A patent/JPH0761719B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6319266A (en) | 1988-01-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |