JPH0761916B2 - Crystal growth boat - Google Patents
Crystal growth boatInfo
- Publication number
- JPH0761916B2 JPH0761916B2 JP61119137A JP11913786A JPH0761916B2 JP H0761916 B2 JPH0761916 B2 JP H0761916B2 JP 61119137 A JP61119137 A JP 61119137A JP 11913786 A JP11913786 A JP 11913786A JP H0761916 B2 JPH0761916 B2 JP H0761916B2
- Authority
- JP
- Japan
- Prior art keywords
- boat
- crystal growth
- crystal
- deformation
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title claims description 32
- 239000010453 quartz Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000002994 raw material Substances 0.000 description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はIII-V族化合物半導体、II-VI化合物半導体等を
結晶成長させるときに用いるボートに関し、結晶成長法
としては水平ブリツジマン法、三温度水平ブリツジマン
法、グラジエントフリーズ法、ゾーンメルテイング法等
に用いる結晶成長用ボートに関する。The present invention relates to a boat used for crystal growth of III-V group compound semiconductors, II-VI compound semiconductors and the like. The present invention relates to a boat for crystal growth used in a temperature horizontal Bridgman method, a gradient freeze method, a zone melting method, and the like.
成長結晶は単結晶に限らず多結晶にも適用できるもので
ある。The grown crystal is not limited to a single crystal but can be applied to a polycrystal.
水平ブリツジマン法を例にして従来の結晶成長を第１図
及び第２図によつて説明する。第１図は結晶成長装置の
正断面図であり、第２図は第１図のＡ−Ａ断面図であ
る。（従来は被覆13がない。） 結晶原料７を入れたボート２を反応管５の一方に置き、
他方に揮発性成分８を入れて内部を真空に引いた後反応
管５を密封する。ボート２と揮発性成分８の中間に、連
通孔12を有する隔壁11を設けてある。この反応管を多数
に分割された横型加熱炉に挿入し、水平方向の適当な温
度分布を形成するように加熱した。ボート２の中の結晶
原料７は溶融され他方、揮発性成分８は一部揮発して、
前記連通孔12を通つてボート２がある反応管５の中を満
す。前記温度分布の中を反応管５又は加熱炉を移動する
ことによりボート２の前壁９より融液の温度を降下させ
固体結晶６を成長させる。Conventional crystal growth will be described with reference to FIGS. 1 and 2 by taking the horizontal Britzmann method as an example. 1 is a front sectional view of the crystal growth apparatus, and FIG. 2 is a sectional view taken along line AA of FIG. (Conventionally, there is no coating 13.) The boat 2 containing the crystal raw material 7 is placed on one side of the reaction tube 5.
On the other hand, the volatile component 8 is put and the inside is evacuated, and then the reaction tube 5 is sealed. A partition wall 11 having a communication hole 12 is provided between the boat 2 and the volatile component 8. This reaction tube was inserted into a horizontal heating furnace divided into a large number and heated so as to form an appropriate temperature distribution in the horizontal direction. The crystal raw material 7 in the boat 2 is melted while the volatile component 8 is partially volatilized,
The reaction tube 5 having the boat 2 is filled through the communication hole 12. By moving the reaction tube 5 or the heating furnace in the temperature distribution, the temperature of the melt is lowered from the front wall 9 of the boat 2 to grow the solid crystal 6.
従来の結晶成長用ボートは主として石英で作られている
が、結晶成長のための長時間約1000℃以上の高温の下に
置かれ、結晶原料融液の荷重を受けて変形を起す。ボー
トを用いる結晶成長においてはボートの形状に沿つた外
形を有する結晶が得られるので、ボートの変形は結晶の
変形に直結する。また、半導体結晶はウエハ状に切出し
て用いるが結晶の変形はウエハの形状をも変化させるこ
とになり、ウエハを加工するときに必要な形状が取れな
かつたり、ロスが増加したりする。結晶成長の過程にお
いては、ボートの変形が大きくなると融液がボートから
こぼれてボートや反応管が割れるというトラブルが発生
する。さらに変形したボートは反応管に入らなくなるな
どのことから再使用ができなくなる場合もある。このよ
うな現象は石英製のボートに限らず、他のボートでも起
ることがあり同様にトラブルの原因となる。The conventional boat for crystal growth is mainly made of quartz, but it is placed under a high temperature of about 1000 ° C. or more for a long time for crystal growth, and is deformed under the load of the crystal raw material melt. In the crystal growth using a boat, a crystal having an outer shape that conforms to the shape of the boat is obtained, so that the deformation of the boat is directly connected to the deformation of the crystal. Further, the semiconductor crystal is used after being cut out into a wafer shape, but the deformation of the crystal also changes the shape of the wafer, so that the shape required when processing the wafer cannot be obtained or the loss increases. In the process of crystal growth, if the boat is greatly deformed, the melt may spill from the boat and the boat and the reaction tube may be broken. Further, the deformed boat may not be reused in some cases because it cannot enter the reaction tube. Such a phenomenon may occur not only in the boat made of quartz but also in other boats, and similarly causes a trouble.
本発明は従来の結晶成長用ボートの欠点を解消し、ボー
トの熱的強度を高めることにより、ボートの変形を抑止
し、変形のない成長結晶を得ることを可能にした結晶成
長用ボートを提供しようとするものである。The present invention provides a boat for crystal growth that eliminates the drawbacks of the conventional boat for crystal growth and enhances the thermal strength of the boat, thereby suppressing the deformation of the boat and obtaining grown crystals without deformation. Is what you are trying to do.
本発明は、石英製ボートの外面をカーボン（無定形炭
素、グラファイト、ダイヤモンドのいずれも可）又はア
ルミナで被覆してボートの熱的強度を高めたことを特徴
とする結晶成長用ボートである。The present invention is a boat for crystal growth characterized by coating the outer surface of a quartz boat with carbon (any of amorphous carbon, graphite, and diamond) or alumina to enhance the thermal strength of the boat.
被覆の厚さはボートの形状及び厚さや結晶成長条件によ
り異なるが一般的には10〜100μｍが好ましい。被覆の
形成方法としては真空蒸着法、熱分解気相反応法などに
よることができる。Although the thickness of the coating varies depending on the shape and thickness of the boat and the crystal growth conditions, it is generally preferably 10 to 100 μm. The coating can be formed by a vacuum vapor deposition method, a thermal decomposition gas phase reaction method, or the like.
図面で説明すると次のようになる。第１図は、本発明に
係る結晶成長用反応管の正断面図であり、第２図は第１
図のＡ−Ａ断面図である。本発明の特徴はボート２の外
表面に被覆13を形成する点にある。The description will be as follows with reference to the drawings. FIG. 1 is a front sectional view of a crystal growth reaction tube according to the present invention, and FIG.
It is an AA sectional view of a figure. The feature of the present invention resides in that the coating 13 is formed on the outer surface of the boat 2.
〔実施例１〕 断面外形が直径8cmの半円形で長さが60cm、厚さが2mm、
石英製ボートの外表面を厚さ約10μの無定形カーボンで
被覆した。被覆はアセトンを800℃で熱分解する気相反
応で形成した。このボートにGa及びAsを1:1.075の割合
で合計約10kgの原料を投入し1250℃で加熱溶解後全体を
徐冷してGaAs多結晶を製造した。この間２日を要した。
ボートの変形は0.5mm以下であつた。Example 1 A cross-sectional outer shape is a semicircle having a diameter of 8 cm, a length of 60 cm, and a thickness of 2 mm.
The outer surface of the quartz boat was coated with amorphous carbon having a thickness of about 10μ. The coating was formed by a gas phase reaction in which acetone was pyrolyzed at 800 ° C. A total of about 10 kg of raw materials of Ga and As at a ratio of 1: 1.075 was charged into this boat, and the mixture was heated and melted at 1250 ° C., and then the whole was gradually cooled to produce a GaAs polycrystal. It took two days during this time.
The deformation of the boat was less than 0.5 mm.
なお、上記のGaAs多結晶の製造においてカーボン被覆の
ない石英製ボートを使用すると、ボートの変形は２〜10
mmであつた。If a quartz boat with no carbon coating is used in the production of the above-mentioned GaAs polycrystal, the deformation of the boat will be 2-10.
It was mm.
〔実施例２〕 断面外形が直径6cmの半円形で長さが50cm、厚さが2mmの
石英製ボートの外表面を厚さ約20μの無定形カーボンで
被覆した。被覆の形成法は実施例１と同じである。この
ボートに原料（Ga:As＝1:1.075）を約4kg投入し、全体
を溶融した後、ボートの一端から単結晶化して約７日を
かけて結晶成長を行なつた。この場合のボートの変形は
0.5mm以下であつた。Example 2 A quartz boat having a semicircular cross section with a diameter of 6 cm, a length of 50 cm, and a thickness of 2 mm was coated with amorphous carbon having a thickness of about 20 μ. The method for forming the coating is the same as in Example 1. About 4 kg of a raw material (Ga: As = 1: 1.075) was put into this boat, and the whole was melted, and then single-crystallized from one end of the boat to grow crystals for about 7 days. The deformation of the boat in this case
It was less than 0.5 mm.
なお、上記のGaAs単結晶の製造において、カーボン被覆
のない石英製ボートを使用して同様の結晶成長を行なつ
た。そのときのボートの変形は２〜6mmであつた。In the production of the GaAs single crystal, the same crystal growth was performed using a quartz boat without carbon coating. The deformation of the boat at that time was 2 to 6 mm.
〔実施例３〕 断面外形が直径5cmの半円形で長さが45cm、厚さが2mmの
石英製ボートの外表面を厚さ約10μの無定形カーボンで
被覆した。被覆形成法は実施例１と同じである。このボ
ートに原料（In:As＝1:1.075）を約4kg投入して1000℃
に加熱溶解後全体を徐冷してInAsの多結晶を製造した。
この間３日を要した。このときのボートの変形は0.1mm
以下であつた。Example 3 A quartz boat having a semicircular cross section with a diameter of 5 cm, a length of 45 cm, and a thickness of 2 mm was coated with amorphous carbon having a thickness of about 10 μm. The coating forming method is the same as in Example 1. About 4kg of raw material (In: As = 1: 1.075) is put into this boat and 1000 ℃
After melting by heating, the whole was gradually cooled to produce InAs polycrystal.
It took 3 days during this time. The deformation of the boat at this time is 0.1 mm
It was as follows.
本発明は、上記構成を採用することにより、ボートの熱
的強度を高めることができ、その結果ボートの変形を未
然に防ぎ、形状不良のない良好な結晶を製造することを
可能とした。また、ボートの変形がなくなり、再使用が
可能となつた。なお、このようなボートは従来のボート
に対して簡単な表面処理により容易に作成することがで
きるものである。According to the present invention, by adopting the above configuration, the thermal strength of the boat can be increased, and as a result, the deformation of the boat can be prevented and a good crystal without a defective shape can be manufactured. In addition, the boat is not deformed and can be reused. It should be noted that such a boat can be easily produced by a simple surface treatment with respect to the conventional boat.
第１図は、本発明に係る結晶成長用反応管の正断面図、
第２図は第１図のＡ−Ａ断面図である。FIG. 1 is a front sectional view of a crystal growth reaction tube according to the present invention,
FIG. 2 is a sectional view taken along the line AA of FIG.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭58−91095（ＪＰ，Ａ) 特開 昭59−8690（ＪＰ，Ａ) 特開 昭57−71900（ＪＰ，Ａ) 実開 昭57−1874（ＪＰ，Ｕ) 実開 昭57−185776（ＪＰ，Ｕ) 特公 昭31−8354（ＪＰ，Ｂ１) 特公 昭49−14382（ＪＰ，Ｂ１) 電気化学協会電子材料委員会編 「半導 体材料」再版（昭45−７−30）朝倉書店 Ｐ．97 高須 新一郎著 「結晶育成技術」第３ 版（昭61−３−19）東京大学出版会 Ｐ. 122−123 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-58-91095 (JP, A) JP-A-59-8690 (JP, A) JP-A-57-71900 (JP, A) Practical application Sho-57- 1874 (JP, U) Actual Development Sho 57-185776 (JP, U) Japanese Patent 31-8354 (JP, B1) Japanese Patent Sho 49-14382 (JP, B1) Electrochemical Society Electronic Materials Committee "Semiconductor Body material ”reprint (Sho 45-7-30) Asakura Shoten P.P. 97 Shinichiro Takasu, “Crystal Growth Technology,” 3rd edition (Sho 61-3-19) The University of Tokyo Press P. 122-123
Claims (1)
ナで被覆してボートの熱的強度を高めたことを特徴とす
る結晶成長用ボート。1. A boat for crystal growth, characterized in that the outer surface of a quartz boat is coated with carbon or alumina to enhance the thermal strength of the boat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61119137A JPH0761916B2 (en) | 1986-05-26 | 1986-05-26 | Crystal growth boat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61119137A JPH0761916B2 (en) | 1986-05-26 | 1986-05-26 | Crystal growth boat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62278184A JPS62278184A (en) | 1987-12-03 |
| JPH0761916B2 true JPH0761916B2 (en) | 1995-07-05 |
Family
ID=14753848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61119137A Expired - Fee Related JPH0761916B2 (en) | 1986-05-26 | 1986-05-26 | Crystal growth boat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0761916B2 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4914382A (en) * | 1972-05-22 | 1974-02-07 | ||
| JPS571874U (en) * | 1980-06-04 | 1982-01-07 | ||
| JPS5771900A (en) * | 1980-10-23 | 1982-05-04 | Sumitomo Electric Ind Ltd | Preparation of signal crystal |
| JPS5891095A (en) * | 1981-11-24 | 1983-05-30 | Hitachi Cable Ltd | Method for manufacturing compound semiconductor single crystal |
| JPS598690A (en) * | 1982-07-05 | 1984-01-17 | Hitachi Cable Ltd | Method for manufacturing GaAs single crystal |
-
1986
- 1986-05-26 JP JP61119137A patent/JPH0761916B2/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| 電気化学協会電子材料委員会編「半導体材料」再版（昭４５−７−３０）朝倉書店Ｐ．９７ |
| 高須新一郎著「結晶育成技術」第３版（昭６１−３−１９）東京大学出版会Ｐ．１２２−１２３ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62278184A (en) | 1987-12-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |