JPH0762981B2 - Ion source - Google Patents
Ion sourceInfo
- Publication number
- JPH0762981B2 JPH0762981B2 JP61123652A JP12365286A JPH0762981B2 JP H0762981 B2 JPH0762981 B2 JP H0762981B2 JP 61123652 A JP61123652 A JP 61123652A JP 12365286 A JP12365286 A JP 12365286A JP H0762981 B2 JPH0762981 B2 JP H0762981B2
- Authority
- JP
- Japan
- Prior art keywords
- discharge chamber
- pores
- anode electrode
- gas
- main discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000002500 ions Chemical class 0.000 claims description 42
- 239000011148 porous material Substances 0.000 claims description 35
- 238000000605 extraction Methods 0.000 claims description 21
- 238000005192 partition Methods 0.000 claims description 9
- 208000028659 discharge Diseases 0.000 description 79
- 239000007789 gas Substances 0.000 description 27
- 239000000919 ceramic Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、イオン注入装置、イオンマイクロアナライザ
その他イオンを利用する装置に適用されるイオン源に関
する。TECHNICAL FIELD The present invention relates to an ion source applied to an ion implantation device, an ion microanalyzer, and other devices that utilize ions.
(従来の技術) 従来、代表的なイオン源として、タングステンフィラメ
ントを使用してプラズマを発生させるフリーマン型イオ
ン源が知られている。このイオン源は、タングステンフ
ィラメントがイオンによりスパッタされ、或は化学的に
活性なガスを放電ガスとして使用するとフィラメントが
化学反応してその損耗が甚だしく、フィラメントの交換
のためにイオン源の作動を停止しなければならない。こ
れに伴い該イオン源を使用する装置の停止も要求され、
装置の稼働効率が低下する不都合がある。(Prior Art) Conventionally, as a typical ion source, a Freeman type ion source for generating plasma using a tungsten filament is known. In this ion source, when a tungsten filament is sputtered by ions, or when a chemically active gas is used as a discharge gas, the filament chemically reacts and its wear is serious, and the operation of the ion source is stopped to replace the filament. Must. Along with this, it is required to stop the device that uses the ion source,
There is a disadvantage that the operating efficiency of the device is reduced.
そこで出願人等は、先に、イオン源の放電室を、細孔を
備えた隔壁電極により主放電室と副放電室に区画し、フ
ィラメントを設けた副放電室には希ガスを導入し、また
主放電室には所望のイオンを発生する放電ガスを導入
し、副放電室の圧力を主放電室の圧力よりも高め、フィ
ラメントと隔壁電極と主放電室の陽極との間で複合放電
を行なうことによりイオンを発生させ、フィラメントの
寿命を長くするようにしたものを提案した(特開昭60−
189841)。Therefore, the applicants and the like first divide the discharge chamber of the ion source into a main discharge chamber and a sub discharge chamber by partition wall electrodes having pores, and introduce a rare gas into the sub discharge chamber provided with a filament, In addition, a discharge gas that generates desired ions is introduced into the main discharge chamber, the pressure in the sub discharge chamber is raised above the pressure in the main discharge chamber, and a composite discharge is generated between the filament, the partition electrode, and the anode of the main discharge chamber. We have proposed a method in which ions are generated by carrying out so as to prolong the life of the filament (JP-A-60-
189841).
(発明が解決しようとする問題点) 前記提案のものは化学的に活性な放電ガスを使用出来、
しかも比較的長時間の使用に耐える有利性があるが、大
きなイオン電流を得るにはまだ充分でなく、また比較的
熱電子の衝突の多いアノード電極の細孔付近が高温化し
て熱による損傷を受け易い欠点が見られた。(Problems to be Solved by the Invention) The above-mentioned proposal can use a chemically active discharge gas,
Moreover, it has the advantage of withstanding use for a relatively long time, but it is still not sufficient to obtain a large ionic current, and the vicinity of the pores of the anode electrode, where there are relatively many collisions of thermoelectrons, becomes hot and may be damaged by heat. There were some vulnerabilities that were susceptible.
本発明の目的は、こうした熱による損傷を防止してより
一層長時間の使用を可能とすると共に多きなイオン電流
が得られるイオン源を提供することにある。An object of the present invention is to provide an ion source capable of preventing such damage due to heat, enabling use for a longer time, and obtaining a large ion current.
(問題点を解決するための手段) 本発明では、前記問題点の解決のために、放電室を、隔
壁により主放電室とフィラメントを設けた副放電室とに
区画すると共にこれら両室を該隔壁に設けたアノード電
極の細孔を介して連通させ、該副放電室に希ガスを導入
すると共に主放電室に所望のイオンを発生させる放電ガ
スを導入し、該副放電室の圧力を主放電室の圧力よりも
高く保持するようにしたものに於いて、該アノード電極
の細孔の形状をスリット形の細孔に形成してこれを主放
電室の側方に形成したイオン引出し口に接近させて設け
るようにした。(Means for Solving Problems) In the present invention, in order to solve the above problems, the discharge chamber is divided into a main discharge chamber and a sub discharge chamber provided with a filament by a partition wall, and both chambers are The anode gas provided in the partition wall is communicated with each other through the pores, the rare gas is introduced into the sub discharge chamber, and the discharge gas for generating desired ions is introduced into the main discharge chamber. In what is designed to be kept higher than the pressure in the discharge chamber, the shape of the pores of the anode electrode is formed into slit-shaped pores, and this is used as an ion extraction port formed on the side of the main discharge chamber. I set it close to each other.
(作 用) 副放電室にArガス等の希ガスを導入すると共に主放電室
にO2ガス等の放電ガスを導入し、該副放電室の圧力を主
放電室の圧力よりも高める。そして、副放電室内のフィ
ラメントへ通電すると共に細孔が形成されたアノード電
極及び主放電室にアノード電圧を印加すると、副放電室
内ではフィラメントからの熱電子の供給を得てアノード
電極との間でプラズマが発生する。このプラズマは副放
電室の圧力が高いのでアノード電極に形成した細孔から
主放電室内へと噴き出し、この噴出プラズマと主放電室
との間で放電ガスが電離し、イオンが発生する。発生し
たイオンは主放電室の側方のイオンビーム引出し口から
引出し電極によりビーム状に引き出される。(Operation) A rare gas such as Ar gas is introduced into the sub-discharge chamber and a discharge gas such as O 2 gas is introduced into the main discharge chamber to raise the pressure of the sub-discharge chamber above the pressure of the main discharge chamber. Then, when the anode voltage is applied to the anode electrode in which the pores are formed and the main discharge chamber while energizing the filament in the sub-discharge chamber, the supply of thermoelectrons from the filament is obtained in the sub-discharge chamber and between the anode electrode and the anode electrode. Plasma is generated. Since this plasma has a high pressure in the auxiliary discharge chamber, it is ejected from the pores formed in the anode electrode into the main discharge chamber, and the discharge gas is ionized between the ejected plasma and the main discharge chamber to generate ions. The generated ions are extracted in a beam shape by an extraction electrode from an ion beam extraction port on the side of the main discharge chamber.
この場合、副放電室内で発生した熱電子はアノード電極
の細孔の付近に多く衝突し、該アノード電極は金属製で
あるので比較的熱膨張係数が大きく、これが膨張すると
隔壁のセラミック製インシュレータに破損を与え、破損
面が汚れにより短絡状態となってアノード電極に電圧が
かからなくなる事故を生ずるが、該アノード電極の細孔
をスリット状に形成することにより細孔の表面積を大き
く出来、これに伴い細孔の付近の熱の拡散性が向上し、
アノード電極の熱膨張によるインシュレータの破損も防
げる。また細孔をスリット状とすることにより、主放電
室の側方のイオン引出し口に接近させて細孔を形成し、
イオン引出し口の前方の全面を覆うようにシート状のプ
ラズマを噴出させることが出来、このプラズマで生成さ
れたイオンを余り分散することなくイオン引出し口から
高密度で効率良く引出し、大きなイオン電流を得ること
が出来る。In this case, many thermoelectrons generated in the auxiliary discharge chamber collide near the pores of the anode electrode, and since the anode electrode is made of metal, it has a relatively large coefficient of thermal expansion. Damage occurs, and the damaged surface becomes short-circuited due to dirt, resulting in an accident that the voltage is not applied to the anode electrode, but by forming the pores of the anode electrode in a slit shape, the surface area of the pores can be increased. As a result, the heat diffusivity in the vicinity of the pores is improved,
It also prevents damage to the insulator due to thermal expansion of the anode electrode. Further, by forming the pores in a slit shape, the pores are formed by approaching the ion extraction port on the side of the main discharge chamber,
A sheet-shaped plasma can be ejected so as to cover the entire surface in front of the ion extraction port, and the ions generated by this plasma can be efficiently extracted with high density from the ion extraction port without much dispersion, producing a large ion current. You can get it.
とる(実施例) 本発明の実施例を別紙図面につき説明すると、第1図に
於いて、符号(1)は円筒形室内を有する放電室、
(2)は該放電室(1)を上方の主放電室(3)と下方
の副放電室(4)とに区画する隔壁を示し、図示のもの
では該隔壁(2)を副放電室(4)の天板(5)と中間
にアノード電極(6)を介在させたセラミック板(7)
(7)とで構成した。Example (Example) An example of the present invention will be described with reference to the attached drawing. In FIG. 1, reference numeral (1) is a discharge chamber having a cylindrical chamber,
Reference numeral (2) denotes a partition wall that divides the discharge chamber (1) into an upper main discharge chamber (3) and a lower auxiliary discharge chamber (4). Ceramic plate (7) with an anode electrode (6) interposed between the top plate (5) of 4)
(7) and composed.
主放電室(3)は、内面にセラミック板(8)を設けた
フロート電位の第2アノード電極(9)と、前記隔壁
(2)と、円筒形空室を有する第3アノード電極(10)
とで構成するようにし、第3アノード電極(10)に、上
下方向に幅2mm、長さ25mmのスリット状のイオン引出し
口(11)と、その反対側に位置してAsF5ガス、O2ガス等
の活性ガスやArガス等の不活性ガスの放電ガスを導入す
る放電ガス導入孔(12)とを形成した。The main discharge chamber (3) has a second anode electrode (9) of float potential having a ceramic plate (8) on its inner surface, the partition wall (2), and a third anode electrode (10) having a cylindrical empty chamber.
And a slit-shaped ion extraction port (11) with a width of 2 mm and a length of 25 mm in the vertical direction, and an AsF 5 gas, O 2 located on the opposite side to the third anode electrode (10). A discharge gas introduction hole (12) for introducing a discharge gas such as an active gas such as gas or an inert gas such as Ar gas was formed.
(13)は、アノード電極(6)に形成した細孔で、天板
(5)及びセラミック板(7)(7)にも該細孔(3)
に連なる延長孔(14)(14)を形成し、主放電室(3)
とArガス等の希ガスをの導入孔(15)及びフィラメント
(16)を備えた副放電室(4)とが連通するようにし
た。該細孔(13)及び延長孔(14)(14)は、例えば幅
0.4mm、長さ4.5mmのスリット状の開口に形成し、イオン
引出し口(11)に出来るだけ接近させて第2図示のよう
に引出し口(11)に対し横方向に形成される。該細孔
(13)の内面は副放電室(4)に空間を介して連通して
おり、フィラメント(16)で放出された熱電子の多くが
突入するが、細孔(13)をスリット状に形成することに
よりその内面の面積が大きくなるので熱電子の突入によ
る熱量を周囲に広く拡散させ得、細孔(13)の付近が局
部的に大きく熱膨張することを防げ、セラミック板
(7)(7)の破損を防げる。(13) are pores formed in the anode electrode (6), and the pores (3) are also formed in the top plate (5) and the ceramic plates (7) and (7).
The extension holes (14) (14) connected to the main discharge chamber (3) are formed.
And the auxiliary discharge chamber (4) provided with the introduction hole (15) for introducing a rare gas such as Ar gas and the filament (16). The pores (13) and the extension holes (14) (14) have a width, for example.
It is formed in a slit-like opening having a length of 0.4 mm and a length of 4.5 mm, and is formed laterally with respect to the extraction port (11) as shown in FIG. The inner surface of the pore (13) communicates with the sub-discharge chamber (4) through a space, and most of the thermoelectrons emitted from the filament (16) enter the pore, but the pore (13) is slit-shaped. Since the inner surface of the ceramic plate becomes larger, the amount of heat generated by the intrusion of thermoelectrons can be widely diffused to the surroundings, and local thermal expansion in the vicinity of the pores (13) can be prevented. ) Prevent the damage of (7).
(17)は主放電室(3)の第2アノード電極(9)の前
方のセラミック板(8)に延長孔(14)と対向させて形
成した放電用の小孔を示し、該小孔(17)は細孔(13)
及び延長孔(14)と同形のスリット状に形成することが
好ましい。(18)(19)はイオン引出し口(11)の前方
に設けた引出し電極である。Reference numeral (17) denotes a discharge small hole formed in the ceramic plate (8) in front of the second anode electrode (9) of the main discharge chamber (3) so as to face the extension hole (14). 17) is a pore (13)
Also, it is preferable to form a slit shape having the same shape as the extension hole (14). (18) and (19) are extraction electrodes provided in front of the ion extraction port (11).
(21)(21)は、主放電室(3)の外部上方と副放電室
(4)の外部下方とに設けられ、アノード電極(6)の
細孔(13)の軸方向にほぼ沿った磁場(30)を与える磁
石で、該副放電室(4)で発生し主放電室(3)へ圧力
差で噴出するプラズマの拡散を該磁場(30)により抑制
するようにした。(21) (21) are provided above the main discharge chamber (3) and below the sub discharge chamber (4), and extend substantially along the axial direction of the pores (13) of the anode electrode (6). A magnet for applying a magnetic field (30) is used to suppress the diffusion of plasma generated in the sub-discharge chamber (4) and ejected to the main discharge chamber (3) due to a pressure difference by the magnetic field (30).
第3図は第1図示の実施例に於ける電気配線を示すもの
で、(22)はアノード電源(6)に副放電室(4)内で
の放電のための電位を与える副放電用電源、(23)は第
3アノード電極(10)に主放電室(3)内での放電のた
めの電位を与える主放電用電源、(24)はフィラメント
(16)の発熱用フィラメント電源、(25)は引出し電極
(18)(19)にイオン引出し用の電位を与える引出し電
源、(27)は減速電源である。また(26)はイオン引出
し口(11)から引き出されるビーム状のイオン電流を測
定するためにイオン引出し口(11)から30cm離して設け
たファラデーカップである。FIG. 3 shows the electric wiring in the embodiment shown in FIG. 1, in which (22) is a power source for the sub-discharge which gives the anode power source (6) a potential for discharge in the sub-discharge chamber (4). , (23) is a main discharge power source for applying a potential for discharge in the main discharge chamber (3) to the third anode electrode (10), (24) is a filament power source for heating the filament (16), (25) ) Is an extraction power source that gives the extraction electrodes (18) and (19) a potential for extracting ions, and (27) is a deceleration power source. Further, (26) is a Faraday cup provided at a distance of 30 cm from the ion extraction port (11) for measuring the beam-shaped ion current extracted from the ion extraction port (11).
以上の構成のものに於ける作動は次の通りである。The operation of the above structure is as follows.
まず、副放電室(4)内の真空度が1〜0.1Torrとなる
ようにArガスを導入口(15)から流し込み、主放電室
(3)の真空度が10-2〜10-3Torrとなるように放電ガス
導入口(12)からAsF5ガスを流し、放電室(1)の外部
の真空度を10-4〜10-5Torrとした。次いで各電源(22)
(23)(24)(25)を作動させると、フィラメント(1
6)からの電子の供給を受け、これとアノード電極
(6)との間で放電し、Arガスのプラズマが発生する。
該フィラメント(16)は直径0.6mmで2%トリウム入り
タングステン線をステンレスのコネクター(29)を介し
て絶縁物の台(28)に固定して構成した。First, Ar gas was introduced from the inlet (15) so that the degree of vacuum in the auxiliary discharge chamber (4) was 1 to 0.1 Torr, and the degree of vacuum in the main discharge chamber (3) was 10 -2 to 10 -3 Torr. AsF 5 gas was caused to flow from the discharge gas inlet (12) so that the vacuum level outside the discharge chamber (1) was 10 −4 to 10 −5 Torr. Then each power supply (22)
Actuating (23) (24) (25), the filament (1
Electrons are supplied from 6) and discharge is generated between the electrons and the anode electrode (6) to generate Ar gas plasma.
The filament (16) was constructed by fixing a tungsten wire with a diameter of 0.6 mm and containing 2% thorium to the insulator base (28) through a stainless connector (29).
この放電は、具体的にはアノード電極(6)の細孔(1
3)の内面に於いて行なわれる副放電であり、そのプラ
ズマが主放電室(3)と副放電室(4)との圧力差によ
りスリット状の細孔(13)及び延長孔(14)からシート
状となって主放電室(3)内へと流れ込むと、これと第
3アノード電極(10)との間で生ずる主放電を誘起し、
AsF5ガスのプラズマが生ずる。副放電を発生させるため
にフィラメント(16)から供給される熱電子の多くが、
アノード電極(6)の細孔(13)の内面に突入するが該
細孔(13)はスリット形で内面の面積が大きいので熱電
子の突入に伴う熱量は逐次、アノード電極(6)を伝わ
って拡散し、細孔(13)付近のアノード電極(6)が異
常に熱膨張することがない。従ってアノード電極(6)
に併置されたセラミック板(7)(7)のインシュレー
タが該電極(6)の熱膨張で破損されることもなく、長
時間の使用が可能になる。Specifically, this discharge is performed by using the pores (1) of the anode electrode (6).
3) is an auxiliary discharge performed on the inner surface, and its plasma is generated from the slit-like pores (13) and the extension holes (14) due to the pressure difference between the main discharge chamber (3) and the auxiliary discharge chamber (4). When it becomes a sheet and flows into the main discharge chamber (3), it induces a main discharge generated between this and the third anode electrode (10),
A plasma of AsF 5 gas is generated. Most of the thermoelectrons supplied from the filament (16) to generate the secondary discharge,
The holes (13) of the anode electrode (6) project into the inner surface of the pores (13), but since the pores (13) are slit-shaped and have a large inner surface area, the amount of heat associated with the entry of thermoelectrons is sequentially transmitted through the anode electrode (6). And the anode electrode (6) near the pores (13) does not expand abnormally. Therefore the anode electrode (6)
The insulators of the ceramic plates (7) and (7) juxtaposed with each other are not damaged by the thermal expansion of the electrodes (6) and can be used for a long time.
また主放電室(3)の側方のイオン引出し口(11)に接
近させてスリット状の細孔(13)を形成することにより
副放電室(4)からイオン引出し口(11)の直前にシー
ト状のプラズマを噴出させ得、該プラズマにより電離さ
れて密度の高いAsF5ガスのイオンを分散させることなく
イオン引出し口(11)から引出し電極(18)(19)によ
り引き出せるので大きなイオン電流を得ることが出来
る。Further, by forming a slit-shaped fine hole (13) close to the ion extraction port (11) on the side of the main discharge chamber (3), just before the ion extraction port (11) from the auxiliary discharge chamber (4). A sheet-like plasma can be ejected, and ions of high density AsF 5 gas ionized by the plasma can be extracted from the ion extraction port (11) by the extraction electrodes (18) and (19) so that a large ion current is generated. You can get it.
図示の実施例では、主放電室(3)の側方に、細孔(1
3)の軸方向の磁場(30)を発生する磁石(21)(21)
を設け、該磁場(30)に沿って副放電によるプラズマが
拡散せずに大きく主放電室(3)内に噴出するようにし
た。In the illustrated embodiment, the pores (1
3) Magnets (21) (21) that generate an axial magnetic field (30)
Is provided so that the plasma due to the sub-discharge does not diffuse along the magnetic field (30) and largely jets into the main discharge chamber (3).
(発明の効果) 以上のように本発明によるときは、副放電室で形成され
たプラズマを主放電室にアノード電極の細孔を介して導
入し、そこで所望のイオンを発生させるようにしたイオ
ン源に於いて、該細孔をスリット状に形成すると共に主
放電室のイオン引出し口に接近して設けるようにしたの
で、熱電子の突入による熱量を大きな細孔面積により広
く拡散させることが出来、熱によるインシュレータの破
損を防げて耐久性が向上し、またイオン引出し口の近く
でこれを覆うようにシート状のプラズマを形成出来るの
でイオンを無駄なく引き出せ、大きなイオン電流を得る
ことが出来る等の効果がある。(Effects of the Invention) As described above, according to the present invention, the plasma formed in the auxiliary discharge chamber is introduced into the main discharge chamber through the pores of the anode electrode, and the desired ions are generated there. In the source, since the pores are formed in a slit shape and are provided close to the ion extraction port of the main discharge chamber, the heat quantity due to the intrusion of thermoelectrons can be widely spread over a large pore area. , It is possible to prevent damage to the insulator due to heat and improve the durability. Also, since a sheet-like plasma can be formed near the ion extraction port to cover it, ions can be extracted without waste, and a large ion current can be obtained. Has the effect of.
第1図は本発明の実施例の半截斜視図、第2図は第1図
のII−II線部分の平面図、第3図は第1図示のものの配
線図である。 (1)……放電室、(2)……隔壁 (3)……主放電室、(4)……副放電室 (6)……アノード電極、(13)……細孔 (16)……フィラメントFIG. 1 is a half cutaway perspective view of an embodiment of the present invention, FIG. 2 is a plan view of the II-II line portion of FIG. 1, and FIG. 3 is a wiring diagram of the one shown in FIG. (1) …… Discharge chamber, (2) …… Partition (3) …… Main discharge chamber, (4) …… Sub discharge chamber (6) …… Anode electrode, (13) …… Pore (16)… …filament
───────────────────────────────────────────────────── フロントページの続き (72)発明者 菊池 理一 神奈川県茅ヶ崎市萩園2267−2 (56)参考文献 特開 昭60−189841(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Riichi Kikuchi 2267-2 Hagizono, Chigasaki City, Kanagawa Prefecture (56) References JP-A-60-189841 (JP, A)
Claims (1)
ントを設けた副放電室とに区画すると共にこれら両室を
該隔壁に設けたアノード電極の細孔を介して連通させ、
該副放電室に希ガスを導入すると共に主放電室に所望の
イオンを発生させる放電ガスを導入し、該副放電室の圧
力を主放電室の圧力よりも高く保持するようにしたもの
に於いて、該アノード電極の細孔の形状をスリット形の
細孔に形成してこれを主放電室の側方に形成したイオン
引出し口に接近させて設けたことを特徴とするイオン
源。1. A discharge chamber is partitioned by a partition into a main discharge chamber and a sub-discharge chamber provided with a filament, and both chambers are communicated with each other through pores of an anode electrode provided on the partition.
A rare gas is introduced into the sub-discharge chamber, and a discharge gas for generating desired ions is introduced into the main discharge chamber so that the pressure in the sub-discharge chamber is maintained higher than the pressure in the main discharge chamber. Further, the ion source is characterized in that the pores of the anode electrode are formed into slit-shaped pores and are provided close to the ion extraction port formed on the side of the main discharge chamber.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61123652A JPH0762981B2 (en) | 1986-05-30 | 1986-05-30 | Ion source |
| US07/055,804 US4841197A (en) | 1986-05-28 | 1987-05-27 | Double-chamber ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61123652A JPH0762981B2 (en) | 1986-05-30 | 1986-05-30 | Ion source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62281234A JPS62281234A (en) | 1987-12-07 |
| JPH0762981B2 true JPH0762981B2 (en) | 1995-07-05 |
Family
ID=14865911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61123652A Expired - Lifetime JPH0762981B2 (en) | 1986-05-28 | 1986-05-30 | Ion source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0762981B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2519709B2 (en) * | 1987-03-11 | 1996-07-31 | 日本真空技術株式会社 | Hollow cathode type ion source |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60189841A (en) * | 1984-03-12 | 1985-09-27 | Tokai Daigaku | Ion source |
-
1986
- 1986-05-30 JP JP61123652A patent/JPH0762981B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62281234A (en) | 1987-12-07 |
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