JPH0766774B2 - Sample surface analyzer - Google Patents
Sample surface analyzerInfo
- Publication number
- JPH0766774B2 JPH0766774B2 JP1111784A JP11178489A JPH0766774B2 JP H0766774 B2 JPH0766774 B2 JP H0766774B2 JP 1111784 A JP1111784 A JP 1111784A JP 11178489 A JP11178489 A JP 11178489A JP H0766774 B2 JPH0766774 B2 JP H0766774B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- probe
- sample surface
- microscope
- ray photoelectron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明はX線高電子分析装置と走査型トンネル顕微鏡と
を結合した分析装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an analyzer in which an X-ray high electron analyzer and a scanning tunneling microscope are combined.
(従来の技術) X線光電子分析法は試料表面の元素分析および元素の結
合状態の分析ができるが、試料表面の微細な形状構造を
知ることはできない。他方走査型トンネル顕微鏡は試料
表面の形状構造を原子的スケールで観察することができ
るが、観察された形状構造と試料表面の構成元素の化学
結合状態との関係を直接知ることはできない。従来走査
型電子顕微鏡と走査型トンネル顕微鏡とを結合した装置
はあるが、走査型電子顕微鏡は試料表面の形状観察が行
えるだけであるから、走査型トンネル顕微鏡と組合せた
場合、走査型トンネル顕微鏡の分析位置を走査型電子顕
微鏡で観察して確認すると云うことはできても、そのよ
うな構造を形成している元素についての情報を得ること
はできない。(Prior Art) Although the X-ray photoelectron analysis method can analyze the element surface of the sample and the bonding state of the elements, it cannot know the fine shape structure of the sample surface. On the other hand, the scanning tunneling microscope can observe the shape structure of the sample surface on an atomic scale, but cannot directly know the relationship between the observed shape structure and the chemical bonding state of the constituent elements of the sample surface. Conventionally, there are devices that combine a scanning electron microscope and a scanning tunnel microscope, but the scanning electron microscope can only observe the shape of the sample surface. Although it can be said that the analysis position can be confirmed by observing with a scanning electron microscope, it is not possible to obtain information about the elements forming such a structure.
このため試料表面の微細構造と構成元素とを関係づけて
観察しようとする場合は、試料表面のX線光電子分析を
行った後、その試料を走査型トンネル顕微鏡に移して観
察をする他なく、X線光電子分析装置も走査型トンネル
顕微鏡も共に高真空装置であるから、試料はX線光電子
分析装置から走査型トンネル顕微鏡に移すとき一旦大気
中に出さねばならず、そのとき試料表面は大気中成分が
吸着したり酸化されたりして、トンネル顕微鏡での観察
結果が本来の試料表面の元素組成と対応しないものとな
る。For this reason, in the case of observing the fine structure of the sample surface in association with the constituent elements, there is no choice but to perform the X-ray photoelectron analysis of the sample surface and then transfer the sample to a scanning tunneling microscope for observation. Since both the X-ray photoelectron analyzer and the scanning tunnel microscope are high-vacuum devices, the sample must first be exposed to the atmosphere when it is transferred from the X-ray photoelectron analyzer to the scanning tunnel microscope. The components are adsorbed or oxidized, and the observation result with the tunnel microscope does not correspond to the original elemental composition of the sample surface.
(発明が解決しようとする課題) 本発明は試料表面の元素組成と微細構造との相関性の解
析とか試料表面に薄層を生長させるときの成長過程の解
析等を大気による撹乱作用なしに行い得る装置を得るこ
とを目的とする。(Problems to be Solved by the Invention) In the present invention, the analysis of the correlation between the elemental composition of the sample surface and the fine structure, the analysis of the growth process when a thin layer is grown on the sample surface, etc., are performed without disturbing the atmosphere. The purpose is to obtain a device to obtain.
(課題を解決するための手段) 一つの真空外筐の中にX線光電子分析装置とイオン照射
手段と、試料を上記イオン照射手段とX線光電子分析装
置との間で移動させる手段と、上記X線光電子分析装置
の試料位置上に探針が進出退避可能な走査型トンネル顕
微鏡と、上記探針がX線光電子分析装置における試料位
置上から退避した位置において、上記探針に対向配置さ
れたチャンネルプレートとこの位置で探針と上下チャン
ネルプレート間に高電圧を印加する手段とで構成される
電界顕微鏡とを配置した。(Means for Solving the Problem) An X-ray photoelectron analysis apparatus and an ion irradiation means in one vacuum outer casing, a means for moving a sample between the ion irradiation means and the X-ray photoelectron analysis apparatus, and A scanning tunneling microscope in which the probe can advance and retreat to the sample position of the X-ray photoelectron analyzer, and the probe is arranged to face the probe at a position retracted from the sample position in the X-ray photoelectron analyzer. An electric field microscope composed of a channel plate and a means for applying a high voltage between the probe and the upper and lower channel plates at this position was arranged.
(作用) X線光電子分析装置の外筺内に走査型トンネル顕微鏡を
設置すれば、両者間で試料を移動させること、或は試料
は動かさないで、走査型トンネル顕微鏡の探針を試料面
の分析位置に臨ませることは容易であり、試料は真空外
筺内に設置されたまゝで両方の装置による観察ができ、
大気による撹乱作用を受けない。そして本発明ではイオ
ン照射手段が同じ真空外筐体に設けられているので、試
料面のイオン衝撃による浄化,イオンエッチング等が可
能であり、試料表面層の成長過程の走査型トンネル顕微
鏡による観察は探針先端を同じ形状に保ってトンネル顕
微鏡像を得る必要があるが、同一真空容器内にトンネル
顕微鏡の探針自体を試料とする電界顕微鏡を設けたの
で、探針先端形状の確認ができ、観察結果の信頼性も高
くなる。(Operation) If the scanning tunnel microscope is installed in the outer casing of the X-ray photoelectron analyzer, the sample of the scanning tunnel microscope is moved between the two without moving the sample or moving the sample. It is easy to expose it to the analysis position, and the sample can be observed by both devices while it is installed in the vacuum enclosure.
Not disturbed by the atmosphere. Further, in the present invention, since the ion irradiation means is provided in the same vacuum outer casing, the sample surface can be cleaned by ion bombardment, ion etching, etc., and the growth process of the sample surface layer can be observed by a scanning tunneling microscope. It is necessary to keep the tip of the probe in the same shape to obtain a tunnel microscope image, but since the electric field microscope using the probe of the tunnel microscope as a sample is provided in the same vacuum container, the shape of the probe tip can be confirmed. The reliability of the observation result also becomes high.
(実施例) 図に本発明の一実施例を示す。第1図は装置各部の配置
を横一列に展開した図で、実際の配置の位置関係は第2
図に示される。1は外筺で排気系2に接続されて10-10T
orr程度まで排気される。外筺内で3はX線銃、4は試
料ステージで、X線銃の下方に配置されX,Y,Z3軸方向の
微動機構を有する。Sは試料ステージ上にセットされた
試料である。外筺内にはX線銃の横にイオン銃5が配置
されている。6はイオン銃5の下方に配置された試料台
で、試料を加熱するヒータ7が設けられている。8は試
料導入用の予備真空室で9はゲートバルブである。10は
電子エネルギー分析器で、二重球面電極型であり、電子
入射側は試料面のX線照射領域を望んでいる。11は電子
検出器で、電子エネルギー分析器10を通過した特定エネ
ルギーの電子が入射し検出される。12は走査型トンネル
顕微鏡の探針で、X,Y,Z3軸方向微動装置13の下面に固定
されている。この微動装置は3軸方向に配置された3つ
圧電素子により構成されており、水平ガイド14に沿って
第1図で左右に移動でき、ガイド14の左端に位置せしめ
られたとき、探針12が試料面の観察点に位置するように
なっている。この観察点はX線銃による試料面のX線照
射域の中心に位置し、それはまた電子エネルギー分析器
10の光軸と試料面との交点ともなっている。探針微動装
置13をガイド14の第1図で右端に位置させたとき、探針
12の下方になる位置にマルチチャンネルプレート15が配
置されている。また微動装置13のガイド右端位置で探針
12に高電圧が印加できるようにしてあり、マルチチャン
ネルプレートの出力は図外のCRTに映像として表示され
る。探針12に高電圧を印加したときのこの像は探針先端
の電界電子顕微鏡像であり、随時この像を観測すること
により、探針先端の変化の有無を検知することができ
る。ガイド14は第1図では電子エネルギー分析器の下に
位置しているが、実際の配置は第2図に示すように、X
線銃3,イオン銃5,電子エネルギー分析器10の三者配列に
対して直交する方向に配置されている。(Example) An example of the present invention is shown in the drawing. FIG. 1 is a diagram in which the arrangement of each part of the device is developed in a horizontal row.
As shown in the figure. 1 is an outer casing and is connected to the exhaust system 2 and is 10 -10 T
Exhausted to about orr. Inside the outer casing, 3 is an X-ray gun, and 4 is a sample stage, which is arranged below the X-ray gun and has a fine movement mechanism in the X, Y, and Z axis directions. S is a sample set on the sample stage. An ion gun 5 is arranged next to the X-ray gun in the outer casing. Reference numeral 6 is a sample table arranged below the ion gun 5, and is provided with a heater 7 for heating the sample. Reference numeral 8 is a preliminary vacuum chamber for introducing a sample, and 9 is a gate valve. An electron energy analyzer 10 is a double spherical electrode type, and the electron incident side desires the X-ray irradiation region of the sample surface. Reference numeral 11 denotes an electron detector, on which electrons of a specific energy having passed through the electron energy analyzer 10 are incident and detected. A probe 12 of the scanning tunneling microscope is fixed to the lower surface of the X, Y, Z three-axis direction fine movement device 13. This fine movement device is composed of three piezoelectric elements arranged in three axial directions, can move left and right along the horizontal guide 14 in FIG. 1, and when it is positioned at the left end of the guide 14, the probe 12 Is located at the observation point on the sample surface. This observation point is located at the center of the X-ray irradiation area on the sample surface by the X-ray gun, which is also the electron energy analyzer.
It is also the intersection of the 10 optical axes and the sample surface. When the fine movement device 13 of the probe is located at the right end of the guide 14 in FIG.
A multi-channel plate 15 is arranged at a position below 12. At the right end of the guide of the fine movement device 13,
A high voltage can be applied to 12, and the output of the multi-channel plate is displayed as an image on a CRT (not shown). This image when a high voltage is applied to the probe 12 is a field electron microscope image of the probe tip, and by observing this image at any time, it is possible to detect the presence or absence of a change in the probe tip. The guide 14 is located below the electron energy analyzer in FIG. 1, but the actual arrangement is as shown in FIG.
The line gun 3, the ion gun 5, and the electron energy analyzer 10 are arranged in a direction orthogonal to the three-way arrangement.
上述した装置による試料測定手順の一例を述べる。予備
排気室8より試料台6上に試料を移し、ヒータ7により
試料を加熱し吸着物質を除去したり、イオン銃5を作動
させて、試料面をイオンビームによりエッチングして、
試料面を更に清浄の状態にした後、試料を試料ステージ
4上に移す。X線銃3を作動させて試料面にX線照射を
行い、試料から放出されるX線光電子を電子エネルギー
分析器10によりエネルギー分析する。この間探針12は第
1図でガイド右端位置に移動させてある。X線光電子分
析が終わったら、探針12に高電圧を印加し、探針先端の
電界顕微鏡像を観察し、要すればその映像を記録してお
く。次いで、探針12を第1図でガイド左端に移動させ、
試料SのZ方向位置を調整し、探針12をX,Y方向に微動
させて試料面の走査を行い、走査型トンネル顕微鏡像を
記録する。An example of the sample measurement procedure by the above-mentioned apparatus will be described. The sample is transferred from the preliminary exhaust chamber 8 onto the sample stage 6, the sample is heated by the heater 7 to remove the adsorbed substance, or the ion gun 5 is operated to etch the sample surface with an ion beam,
After the sample surface is further cleaned, the sample is transferred onto the sample stage 4. The X-ray gun 3 is operated to irradiate the sample surface with X-rays, and the X-ray photoelectrons emitted from the sample are subjected to energy analysis by the electron energy analyzer 10. During this time, the probe 12 has been moved to the right end position of the guide in FIG. After the X-ray photoelectron analysis is completed, a high voltage is applied to the probe 12, and an electric field microscope image at the tip of the probe is observed, and if necessary, that image is recorded. Next, move the probe 12 to the left end of the guide in FIG.
The position of the sample S in the Z direction is adjusted, the probe 12 is finely moved in the X and Y directions to scan the sample surface, and a scanning tunneling microscope image is recorded.
トンネル顕微鏡の映像信号は探針を試料面でX,Y方向に
走査しながら探針に流れる電流が一定になるように探針
をZ方向に微動させたときの微動装置13のZ方向駆動信
号である。以上の測定が終ったら試料を試料台6上に移
し、イオン銃5を作動させて試料面をイオンビームによ
りエッチングして試料表面を微小量削って再びX線光電
子分析と走査型トンネル顕微鏡像の映像信号の取込みを
行う。このときトンネル顕微鏡像の信号採取に先立ち、
探針12の先端の電界電子顕微鏡像を観察して、前回測定
時と変わっていないか否か確認する。以下上述した動作
を繰返して、試料面の深さ方向の分析を進めて行くこと
ができる。The image signal of the tunnel microscope is a Z direction drive signal of the fine movement device 13 when the probe is finely moved in the Z direction so that the current flowing through the probe is constant while scanning the sample surface in the X and Y directions. Is. After the above measurement is completed, the sample is moved onto the sample table 6, the ion gun 5 is operated, the sample surface is etched by the ion beam, the sample surface is finely ground, and again the X-ray photoelectron analysis and the scanning tunneling microscope image Captures video signals. At this time, prior to the signal acquisition of the tunnel microscope image,
The field electron microscope image of the tip of the probe 12 is observed to confirm whether it is the same as the previous measurement. The above-described operation can be repeated below to proceed with the analysis in the depth direction of the sample surface.
上述実施例装置ではX線光電子分析と走査型トンネル顕
微鏡による観察が行われるだけであるが、イオン銃5を
利用して、散乱イオン質量分析をも行い得るように散乱
イオンの質量分析器を併設することも勿論可能である。Although only X-ray photoelectron analysis and observation by a scanning tunneling microscope are performed in the apparatus of the above-described embodiment, a mass analyzer for scattered ions is additionally provided so that scattered ion mass analysis can be performed by using the ion gun 5. Of course, it is also possible.
(発明の効果) 本発明によれば走査型トンネル顕微鏡により試料面の原
子レベルの構造,付着原子の付着状態が観察でき、X線
光電子分析法との併用により、その原子的構造に対応す
る化学的構造が判明でき、途中で大気による汚染を受け
る心配がないから、試料表面の化学的構造と原子レベル
の構造との関連について確実な情報を得ることができ
る。そして走査型トンネル顕微鏡の探針自体を試料とす
る電界顕微鏡を設けて探針先端形状の変化の有無をチェ
ックできるようにしたので、相互比較すべきトンネル顕
微鏡像が同一先端形状の探針で得られたものである保証
が得られて分析結果の信頼性が一層高められるのであ
る。(Effect of the Invention) According to the present invention, the atomic level structure of the sample surface and the attached state of the attached atoms can be observed by the scanning tunneling microscope, and the chemical structure corresponding to the atomic structure can be observed by the combined use with the X-ray photoelectron analysis method. It is possible to obtain reliable information on the relationship between the chemical structure of the sample surface and the atomic level structure, since the physical structure can be determined and there is no risk of being polluted by the atmosphere during the process. Then, an electric field microscope that uses the scanning tunneling microscope's probe itself as a sample was installed so that it could be checked for changes in the probe tip shape, so tunnel microscope images to be compared with each other can be obtained with the same tip probe. This guarantees the reliability of the analysis results.
第1図は本発明の一実施例装置の各部配置の展開側面
図、第2図は同実施例装置の平面図である。 1……外筺、2……排気系、3……X線銃、4……試料
ステージ、5……イオン銃、6……試料台、7……ヒー
タ、8……予備真空室、9……ゲートバルブ、10……電
子エネルギー分析器、11……電子検出器、12……探針、
13……探針微動装置、14……ガイド、15……マルチチャ
ンネルプレート、S……試料。FIG. 1 is a developed side view of the arrangement of each part of the apparatus of one embodiment of the present invention, and FIG. 2 is a plan view of the apparatus of the same embodiment. 1 ... Outer casing, 2 ... Exhaust system, 3 ... X-ray gun, 4 ... Sample stage, 5 ... Ion gun, 6 ... Sample stand, 7 ... Heater, 8 ... Preliminary vacuum chamber, 9 ...... Gate valve, 10 …… Electron energy analyzer, 11 …… Electron detector, 12 …… Tip,
13 ... Tip fine movement device, 14 ... Guide, 15 ... Multi-channel plate, S ... Sample.
Claims (1)
とイオン照射手段と、試料を上記イオン照射手段とX線
光電子分析装置との間で移動させる手段と、上記X線光
電子分析装置の試料位置上に探針が進出退避可能な走査
型トンネル顕微鏡と上記探針がX線光電子分析装置にお
ける試料位置上から退避した位置において、上記探針に
対向配置されたチャンネルプレートとこの位置で探針と
上下チャンネリプレート間に高電圧を印加する手段とで
構成される電界顕微鏡とを配置したことを特徴とする試
料表面分析装置。1. An X-ray photoelectron analysis apparatus and an ion irradiation means in one vacuum casing, a means for moving a sample between the ion irradiation means and the X-ray photoelectron analysis apparatus, and the X-ray photoelectron analysis. A scanning tunneling microscope in which the probe can advance and retreat to the sample position of the device, and a channel plate and a position of the channel plate which are arranged to face the probe at a position where the probe is retracted from the sample position in the X-ray photoelectron analyzer. And a field surface microscope comprising a probe and means for applying a high voltage between the upper and lower channel plates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1111784A JPH0766774B2 (en) | 1989-04-27 | 1989-04-27 | Sample surface analyzer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1111784A JPH0766774B2 (en) | 1989-04-27 | 1989-04-27 | Sample surface analyzer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02288058A JPH02288058A (en) | 1990-11-28 |
| JPH0766774B2 true JPH0766774B2 (en) | 1995-07-19 |
Family
ID=14570074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1111784A Expired - Lifetime JPH0766774B2 (en) | 1989-04-27 | 1989-04-27 | Sample surface analyzer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0766774B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100382760B1 (en) * | 2000-09-25 | 2003-05-01 | 삼성전자주식회사 | Electron spectroscopic analyzer using X-ray |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61217748A (en) * | 1985-03-22 | 1986-09-27 | Shimadzu Corp | Composite surface analysis device |
| JPH0833405B2 (en) * | 1987-05-28 | 1996-03-29 | 株式会社島津製作所 | Scanning microscope |
-
1989
- 1989-04-27 JP JP1111784A patent/JPH0766774B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02288058A (en) | 1990-11-28 |
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