JPH0767041B2 - Dielectric filter - Google Patents
Dielectric filterInfo
- Publication number
- JPH0767041B2 JPH0767041B2 JP2196756A JP19675690A JPH0767041B2 JP H0767041 B2 JPH0767041 B2 JP H0767041B2 JP 2196756 A JP2196756 A JP 2196756A JP 19675690 A JP19675690 A JP 19675690A JP H0767041 B2 JPH0767041 B2 JP H0767041B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor film
- pair
- shield member
- dielectric block
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 claims description 26
- 238000007747 plating Methods 0.000 claims description 11
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims 1
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 claims 1
- 230000008878 coupling Effects 0.000 description 13
- 238000010168 coupling process Methods 0.000 description 13
- 238000005859 coupling reaction Methods 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910001313 Cobalt-iron alloy Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
- Non-Reversible Transmitting Devices (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、例えば自動車電話、パーソナル無線、コード
レス電話等の通信機器等に使用するための誘電体フィル
タに関する。TECHNICAL FIELD The present invention relates to a dielectric filter for use in communication devices such as car phones, personal radios, cordless phones, and the like.
［従来の技術］ 通信機器等に使用するための1/4波長の分布定数型誘電
体フィルタは例えば特開平１−277001号（特願昭63−10
8070号）公報に開示されている。また、ここには入力結
合コンデンサと出力結合コンデンサとシールド部材とを
絶縁性合成樹脂で一体化した組立体を用意し、この組立
体を誘電体ブロックに装着することが開示されている。
この誘電体フィルタにおけるシールド部材は誘電体ブロ
ックの側面に半田結合されている。[Prior Art] A quarter-wavelength distributed constant type dielectric filter for use in communication equipment is disclosed in, for example, Japanese Patent Application Laid-Open No. 1-277001.
No. 8070) publication. Further, there is disclosed that an assembly in which an input coupling capacitor, an output coupling capacitor and a shield member are integrated by an insulating synthetic resin is prepared, and this assembly is mounted on a dielectric block.
The shield member in this dielectric filter is soldered to the side surface of the dielectric block.
［発明が解決しようとする課題］ ところで、従来のシールド部材は、厚さ0.2mm程度のリ
ン青銅板の表面上に銅メッキ層と半田メッキ層とを設け
たものから成る。しかし、リン青銅の熱膨張係数は17.6
×10-6/℃とセラミック誘電体ブロックの熱膨張係数5.0
×10-6/℃に対して3.5倍も大きいので、急熱、急冷など
のヒートショックが加わると、半田付箇所の外導体膜の
剥離や誘電体ブロックの欠けなどが発生し、誘電体フィ
ルタの特性が劣化した。[Problems to be Solved by the Invention] By the way, a conventional shield member is composed of a phosphor bronze plate having a thickness of about 0.2 mm and a copper plating layer and a solder plating layer provided on the surface thereof. However, the coefficient of thermal expansion of phosphor bronze is 17.6.
× 10 -6 / ℃ and coefficient of thermal expansion of ceramic dielectric block 5.0
Since it is 3.5 times larger than × 10 -6 / ° C, when a heat shock such as rapid heating or rapid cooling is applied, peeling of the outer conductor film at the soldering point or chipping of the dielectric block will occur, resulting in a dielectric filter. The characteristics have deteriorated.
そこで、本発明の目的はヒートショックに対する信頼性
の高い誘電体フィルタを提供することにある。Then, the objective of this invention is providing the highly reliable dielectric filter with respect to a heat shock.
［課題を解決するための手段］ 上記目的を達成するための本発明は、４つの側面と一対
の端面とを有する角柱状誘電体ブロックと、前記誘電体
ブロックの前記一対の端面の一方から他方に向って延び
ている複数個の共振孔と、前記共振孔に設けられた内導
体膜と、前記誘電体ブロックの側面に設けられた外導体
膜と、前記外導体膜に対して半田結合されたシールド部
材とを備えた誘電体フィルタにおいて、前記シールド部
材は、前記４つの側面の内の少なくとも互いに対向の一
対の側面に結合された一対の側面部とこの一対の側面部
を相互に連結する部分とを有し、且つニッケル・鉄合金
又はニッケル・コバルト・鉄合金又はニッケル・クロム
・鉄合金の金属板に銅メッキ層と半田メッキ層とを順に
形成した材料から成り、且つ前記誘電体ブロックの熱膨
張率をβ１、前記シールド部材の熱膨張率をβ２とした
場合に、β2/β１を0.5〜1.5の範囲にすることが可能な
熱膨張率を有することを特徴とする誘電体フィルタに係
わるものである。[Means for Solving the Problems] The present invention for achieving the above object is a prismatic dielectric block having four side surfaces and a pair of end surfaces, and one to the other of the pair of end surfaces of the dielectric block. To the outer conductor film, the inner conductor film provided on the resonance hole, the outer conductor film provided on the side surface of the dielectric block, and the outer conductor film by soldering. In the dielectric filter including the shield member, the shield member interconnects the pair of side surfaces coupled to at least one of the four side surfaces facing each other and the pair of side surfaces. A metal plate of nickel / iron alloy or nickel / cobalt / iron alloy or nickel / chromium / iron alloy, in which a copper plating layer and a solder plating layer are sequentially formed, and the dielectric block When the lock has a coefficient of thermal expansion of β1 and the shield member has a coefficient of thermal expansion of β2, the dielectric filter has a coefficient of thermal expansion that allows β2 / β1 to fall within a range of 0.5 to 1.5. Related to.
［発明の作用及び効果］ 本発明によれば、少なくともニッケルと鉄を含む合金か
ら成る金属板に銅メッキ層と半田メッキ層を形成したも
のによって誘電体ブロックに近い熱膨張率を有するシー
ルド部材を形成し、且つこのシールド部材を一対の側面
部とこの一対の側面部を相互に連結する部分を有するよ
うに形成するので、誘電体ブロックに近い熱膨張率を有
し且つ大きな機械的強度を有するシールド部材を容易に
形成することができる。従って、信頼性が高いにも拘ら
ず、コストが比較的安いTEM型誘電体フィルタを提供す
ることができる。According to the present invention, a shield member having a coefficient of thermal expansion close to that of a dielectric block is formed by forming a copper plating layer and a solder plating layer on a metal plate made of an alloy containing at least nickel and iron. Since the shield member is formed so as to have a pair of side surface portions and a portion that connects the pair of side surface portions to each other, it has a coefficient of thermal expansion close to that of the dielectric block and a large mechanical strength. The shield member can be easily formed. Therefore, it is possible to provide a TEM-type dielectric filter whose cost is relatively low despite its high reliability.
［実施例］ 次に、第１図〜第６図を参照して本発明の実施例に係わ
る1/4波長分布定数型誘電体フィルタを説明する。[Embodiment] Next, a quarter-wavelength distributed constant dielectric filter according to an embodiment of the present invention will be described with reference to FIGS.
この誘電体フィルタは、チタン酸バリウム系磁器の高周
波用誘電体材料から成る角柱状誘電体ブロック１を備え
ている。誘電体ブロック１には、この一方の端面２から
他方の端面３に至る２個の共振孔4a、4bと１個の結合孔
５とが設けられている。各共振孔4a、4bの壁面には内導
体膜６がそれぞれ設けられ、一対の端面２、３間の外周
面７即ち４側面には外導体膜８が設けられ、他方の端面
３にはそれぞれの内導体膜６と外導体膜８とをそれぞれ
接続するように端面導体膜９が設けられている。内導体
膜６、外導体膜８及び端面導体膜９は銀ペーストを塗布
して焼付けたものである。This dielectric filter includes a prismatic dielectric block 1 made of a high frequency dielectric material of barium titanate porcelain. The dielectric block 1 is provided with two resonance holes 4a and 4b extending from the one end surface 2 to the other end surface 3 and one coupling hole 5. An inner conductor film 6 is provided on the wall surface of each resonance hole 4a, 4b, an outer conductor film 8 is provided on the outer peripheral surface 7 between the pair of end surfaces 2, 3, that is, four side surfaces, and the other end surface 3 is provided. An end face conductor film 9 is provided so as to connect the inner conductor film 6 and the outer conductor film 8 respectively. The inner conductor film 6, the outer conductor film 8 and the end face conductor film 9 are obtained by applying a silver paste and baking it.
誘電体ブロック１の２つの共振孔4a、4bに結合コンデン
サ10がそれぞれ挿入されている。２つの結合コンデンサ
10は、筒状のコンデンサ用磁器誘電体に一対の電極を設
けた磁器コンデンサから成る。各結合コンデンサ10の一
方のリード11は誘電体フィルタの入出力端子として使用
され、他方のリード12は接続部材13を介して内導体膜６
にそれぞれ接続されている。なお、第４図では結合コン
デンサ10が概略的に示されている。Coupling capacitors 10 are inserted into the two resonance holes 4a and 4b of the dielectric block 1, respectively. Two coupling capacitors
Reference numeral 10 is a ceramic capacitor in which a pair of electrodes are provided on a cylindrical capacitor dielectric. One lead 11 of each coupling capacitor 10 is used as an input / output terminal of the dielectric filter, and the other lead 12 is connected to the inner conductor film 6 via the connecting member 13.
Respectively connected to. The coupling capacitor 10 is schematically shown in FIG.
２つの結合コンデンサ10とシールド部材14とは合成樹脂
から成るモールド絶縁体15によって一体化されている。
第３図は２つの結合コンデンサ10とシールド部材14とを
一体化した組立体16を示す。モールド絶縁体15は共振孔
4a、4bに対する径方向の位置決めを達成するための突出
部17と、共振孔4a、4bに対する結合コンデンサ10の深さ
方向の位置決めを達成するための鍔部18とを有する。The two coupling capacitors 10 and the shield member 14 are integrated by a mold insulator 15 made of synthetic resin.
FIG. 3 shows an assembly 16 in which two coupling capacitors 10 and a shield member 14 are integrated. Mold insulator 15 is a resonance hole
It has a protrusion 17 for achieving radial positioning with respect to 4a and 4b, and a flange portion 18 for achieving positioning in the depth direction of the coupling capacitor 10 with respect to the resonance holes 4a and 4b.
シールド部材14は、結合孔５の上方を覆う上面部19と誘
電体ブロック１の長手の対の側面の外導体膜８に接続す
るための一対の側面部20、21と、外部回路基板（図示せ
ず）に対する取付け及びグランドに対する接続に利用す
るための複数の突出部22とから成り、全体としてコ字状
に形成されている。The shield member 14 includes an upper surface portion 19 that covers the coupling hole 5 and a pair of side surface portions 20 and 21 for connecting to the outer conductor film 8 on the side surfaces of the longitudinal pair of the dielectric block 1, and an external circuit board (see FIG. (Not shown) and a plurality of projections 22 used for connection to a ground and are formed in a U shape as a whole.
このシールド部材14を形成する際には、厚さ0.2mmのニ
ッケル・鉄合金（42Ni−Fe）板を用意し、このニッケル
・鉄合金板に銅下メッキ（銅フラッシュメッキ）層を形
成した後に半田（Sn:Pb＝9:1）メッキ層を７〜10μｍの
厚さに形成し、これを所定パターンに切断し、折り曲げ
る。このシールド部材14の熱膨張係数（線膨張係数）は
20℃〜300℃の範囲において4.0〜4.7×10-6/℃であり、
セラミック誘電体ブロック１のそれ（5.0×10-6/℃）と
ほぼ等しい。なお、誘電体ブロック１の熱膨張係数をβ
１、シールド部材14のそれをβ２とした場合に、β2/β
１は0.8〜0.94である。シールド部材14として適当な材
料はβ2/β１が0.5〜1.5の範囲のものであり、より好ま
しくは0.8〜1.2の範囲のものである。When forming the shield member 14, a 0.2 mm thick nickel-iron alloy (42Ni-Fe) plate is prepared, and a copper under-plating (copper flash plating) layer is formed on the nickel-iron alloy plate. A solder (Sn: Pb = 9: 1) plating layer is formed to a thickness of 7 to 10 μm, which is cut into a predetermined pattern and bent. The coefficient of thermal expansion (coefficient of linear expansion) of this shield member 14 is
In the range of 20 ℃ ~ 300 ℃ is 4.0 ~ 4.7 × 10 -6 / ℃,
It is almost equal to that of the ceramic dielectric block 1 (5.0 × 10 −6 / ° C.). Note that the thermal expansion coefficient of the dielectric block 1 is β
1. If the shield member 14 is set to β2, β2 / β
1 is 0.8 to 0.94. Suitable materials for the shield member 14 are those having β2 / β1 in the range of 0.5 to 1.5, more preferably 0.8 to 1.2.
組立体16を誘電体ブロック１に一体化する時には、シー
ルド部材14の一対の側面部20、21を外導体膜８に半田
（図示せず）で固着する。完成した誘電体フィルタを外
部回路基板に取付ける時には、結合コンデンサ10のリー
ド11及びシールド部材14の突出部22を外部回路基板の貫
通孔に挿入し、信号伝送ライン及びアースラインに接続
する。When the assembly 16 is integrated with the dielectric block 1, the pair of side surface portions 20 and 21 of the shield member 14 are fixed to the outer conductor film 8 with solder (not shown). When the completed dielectric filter is attached to the external circuit board, the lead 11 of the coupling capacitor 10 and the protrusion 22 of the shield member 14 are inserted into the through hole of the external circuit board and connected to the signal transmission line and the ground line.
第５図は第１図〜第４図の誘電体フィルタの等価回路を
示す。２つの共振孔4a、4bに基づく２つの共振回路は、
L1、C1、L2、C2で示されている。これ等の共振回路は、
各共振孔4a、4bの内導体膜６と外導体膜８と端面導体膜
９とに基づいて形成される。２つの共振回路は誘導性イ
ンピーダンスZ1によって結合されている。２つの結合コ
ンデンサ10はCa、Cbで示されている。FIG. 5 shows an equivalent circuit of the dielectric filter shown in FIGS. The two resonance circuits based on the two resonance holes 4a and 4b are
It is designated L1, C1, L2, C2. These resonant circuits are
It is formed based on the inner conductor film 6, the outer conductor film 8 and the end face conductor film 9 of each resonance hole 4a, 4b. The two resonant circuits are coupled by an inductive impedance Z1. The two coupling capacitors 10 are indicated by Ca and Cb.
完成した誘電体フィルタに対して−40〜＋125℃のヒー
トサイクルを200回加える試験を行ったところ、外導体
膜８の剥離や誘電体ブロック１の欠けによる特性劣化が
発生しなかった。また、この誘電体フィルタの電気的特
性即ち減衰特性は従来誘電体フィルタのそれとほとんど
同一であった。A test in which a heat cycle of −40 to + 125 ° C. was applied 200 times to the completed dielectric filter, no characteristic deterioration due to peeling of the outer conductor film 8 or chipping of the dielectric block 1 occurred. Further, the electric characteristic, that is, the attenuation characteristic of this dielectric filter was almost the same as that of the conventional dielectric filter.
［変形例］ 本発明は上述の実施例に限定されるものでなく、例えば
次の変形が可能なものである。[Modification] The present invention is not limited to the above-described embodiments, and the following modifications are possible, for example.
（１） シールド部材14の材料として、20〜300℃の温
度範囲において、熱膨張係数が4.4〜5.2×10-6/℃のニ
ッケル・コバルト・鉄合金（29Ni−17Co−Fe）、及び熱
膨張係数が3.0〜4.2×10-6/℃の30Ni−13Co−Fe合金を
使用することができる。また、誘電体ブロック１の熱膨
張係数が実施例よりも大きい場合には、46Ni−Fe合金、
52−Ni−Fe合金、42Ni−6Cr−Fe合金等を使用すること
ができる。(1) As a material for the shield member 14, a nickel-cobalt-iron alloy (29Ni-17Co-Fe) having a thermal expansion coefficient of 4.4 to 5.2 × 10 -6 / ° C in the temperature range of 20 to 300 ° C, and thermal expansion A 30Ni-13Co-Fe alloy with a coefficient of 3.0 to 4.2 x 10-6 / ° C can be used. Further, when the coefficient of thermal expansion of the dielectric block 1 is larger than that of the example, 46Ni-Fe alloy,
A 52-Ni-Fe alloy, a 42Ni-6Cr-Fe alloy, or the like can be used.
（２） 誘電体ブロック１の共振孔の数を増減すること
ができる。(2) The number of resonance holes in the dielectric block 1 can be increased or decreased.
（３） 端面導体９を省いて1/2波長型に構成すること
ができる。(3) The end face conductor 9 can be omitted to form a half-wave type.
第１図は本発明の１実施例に係わる誘電体フィルタの一
部切欠斜視図、 第２図は第１図の導電膜を有する誘電体ブロックを示す
一部切欠斜視図、 第３図は第１図の組立体を示す一部切欠斜視図、 第４図は第１図の誘電体フィルタのIV−IV線断面図、 第５図は第１図の誘電体フィルタの等価回路図である。 １……誘電体ブロック、２……開放端面、4a、4b……共
振孔、６……内導体膜、７……外周面、８……外導体
膜、14……シールド部材。1 is a partially cutaway perspective view of a dielectric filter according to an embodiment of the present invention, FIG. 2 is a partially cutaway perspective view showing a dielectric block having a conductive film of FIG. 1, and FIG. 1 is a partially cutaway perspective view showing the assembly of FIG. 1, FIG. 4 is a sectional view taken along the line IV-IV of the dielectric filter of FIG. 1, and FIG. 5 is an equivalent circuit diagram of the dielectric filter of FIG. 1 ... Dielectric block, 2 ... Open end surface, 4a, 4b ... Resonance hole, 6 ... Inner conductor film, 7 ... Outer surface, 8 ... Outer conductor film, 14 ... Shield member.
Claims (1)
誘電体ブロックと、前記誘電体ブロックの前記一対の端
面の一方から他方に向って延びている複数個の共振孔
と、前記共振孔に設けられた内導体膜と、前記誘電体ブ
ロックの側面に設けられた外導体膜と、前記外導体膜に
対して半田結合されたシールド部材とを備えた誘電体フ
ィルタにおいて、 前記シールド部材は、前記４つの側面の内の少なくとも
互いに対向の一対の側面に結合された一対の側面部とこ
の一対の側面部を相互に連結する部分とを有し、 且つニッケル・鉄合金又はニッケル・コバルト・鉄合金
又はニッケル・クロム・鉄合金の金属板に銅メッキ層と
半田メッキ層とを順に形成した材料から成り、且つ前記
誘電体ブロックの熱膨張率をβ１、前記シールド部材の
熱膨張率をβ２とした場合に、β2/β１を0.5〜1.5の範
囲にすることが可能な熱膨張率を有することを特徴とす
る誘電体フィルタ。1. A prismatic dielectric block having four side faces and a pair of end faces, a plurality of resonance holes extending from one of the pair of end faces of the dielectric block toward the other, and the resonance. A dielectric filter comprising an inner conductor film provided in a hole, an outer conductor film provided on a side surface of the dielectric block, and a shield member solder-bonded to the outer conductor film, wherein the shield member Has a pair of side surfaces connected to at least a pair of side surfaces facing each other among the four side surfaces and a portion interconnecting the pair of side surfaces, and a nickel-iron alloy or nickel-cobalt -A metal plate of an iron alloy or nickel-chromium-iron alloy, in which a copper plating layer and a solder plating layer are sequentially formed, and the coefficient of thermal expansion of the dielectric block is β1, and the coefficient of thermal expansion of the shield member is A dielectric filter having a coefficient of thermal expansion capable of setting β2 / β1 in the range of 0.5 to 1.5, where β2 is β2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2196756A JPH0767041B2 (en) | 1990-07-25 | 1990-07-25 | Dielectric filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2196756A JPH0767041B2 (en) | 1990-07-25 | 1990-07-25 | Dielectric filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0482401A JPH0482401A (en) | 1992-03-16 |
| JPH0767041B2 true JPH0767041B2 (en) | 1995-07-19 |
Family
ID=16363095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2196756A Expired - Lifetime JPH0767041B2 (en) | 1990-07-25 | 1990-07-25 | Dielectric filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0767041B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0837401A (en) * | 1994-07-22 | 1996-02-06 | Nec Corp | Structure of coupler for cavity resonators |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59139704A (en) * | 1982-10-18 | 1984-08-10 | Murata Mfg Co Ltd | Dielectric resonator |
| JPS5963802A (en) * | 1982-10-01 | 1984-04-11 | Murata Mfg Co Ltd | Dielectric resonator |
| JPS5967002U (en) * | 1982-10-25 | 1984-05-07 | 株式会社村田製作所 | Ground structure of dielectric coaxial resonator |
-
1990
- 1990-07-25 JP JP2196756A patent/JPH0767041B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0482401A (en) | 1992-03-16 |
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