JPH0767666B2 - Group III-V compound semiconductor polishing agent - Google Patents
Group III-V compound semiconductor polishing agentInfo
- Publication number
- JPH0767666B2 JPH0767666B2 JP61230446A JP23044686A JPH0767666B2 JP H0767666 B2 JPH0767666 B2 JP H0767666B2 JP 61230446 A JP61230446 A JP 61230446A JP 23044686 A JP23044686 A JP 23044686A JP H0767666 B2 JPH0767666 B2 JP H0767666B2
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- alkali metal
- group iii
- sodium
- polishing agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005498 polishing Methods 0.000 title claims description 33
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 150000001875 compounds Chemical class 0.000 title claims description 15
- 229910000318 alkali metal phosphate Inorganic materials 0.000 claims description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 150000007973 cyanuric acids Chemical class 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 6
- 229910052936 alkali metal sulfate Inorganic materials 0.000 claims description 6
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 4
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical group [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 4
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- MOMKYJPSVWEWPM-UHFFFAOYSA-N 4-(chloromethyl)-2-(4-methylphenyl)-1,3-thiazole Chemical compound C1=CC(C)=CC=C1C1=NC(CCl)=CS1 MOMKYJPSVWEWPM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000160 potassium phosphate Inorganic materials 0.000 claims description 2
- 235000011009 potassium phosphates Nutrition 0.000 claims description 2
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 claims description 2
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 claims description 2
- 235000019982 sodium hexametaphosphate Nutrition 0.000 claims description 2
- 235000019983 sodium metaphosphate Nutrition 0.000 claims description 2
- 239000001488 sodium phosphate Substances 0.000 claims description 2
- 229910000162 sodium phosphate Inorganic materials 0.000 claims description 2
- 235000011008 sodium phosphates Nutrition 0.000 claims description 2
- 229940048086 sodium pyrophosphate Drugs 0.000 claims description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 2
- 235000011152 sodium sulphate Nutrition 0.000 claims description 2
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 2
- 235000019818 tetrasodium diphosphate Nutrition 0.000 claims description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical group [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 2
- 229910021653 sulphate ion Inorganic materials 0.000 claims 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- 150000008064 anhydrides Chemical class 0.000 claims 1
- CEJLBZWIKQJOAT-UHFFFAOYSA-N dichloroisocyanuric acid Chemical compound ClN1C(=O)NC(=O)N(Cl)C1=O CEJLBZWIKQJOAT-UHFFFAOYSA-N 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 11
- 239000007864 aqueous solution Substances 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- MGNCLNQXLYJVJD-UHFFFAOYSA-N cyanuric chloride Chemical compound ClC1=NC(Cl)=NC(Cl)=N1 MGNCLNQXLYJVJD-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- IFIDXBCRSWOUSB-UHFFFAOYSA-N potassium;1,3-dichloro-1,3,5-triazinane-2,4,6-trione Chemical compound [K+].ClN1C(=O)NC(=O)N(Cl)C1=O IFIDXBCRSWOUSB-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、発光ダイオード、半導体レーザー、電子デバ
イス、光電子集積回路等に用いられる周期率表の第III
−Ｖ族物質から成る化合物半導体の化学的及び機械的研
磨に用いる研磨剤に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a periodic table III used in light emitting diodes, semiconductor lasers, electronic devices, optoelectronic integrated circuits, and the like.
The present invention relates to an abrasive used for chemical and mechanical polishing of compound semiconductors composed of Group V substances.
更に詳しく述べると、使用時に水溶液とし、第III−Ｖ
族物質例えばGaAs、GaP、InAs、InP等から成る化合物半
導体の表面研磨をスクラッチ及び傷の発生が少なく高速
鏡面仕上げ加工を成らしめる研磨剤に関する。More specifically, an aqueous solution is prepared at the time of use,
The present invention relates to an abrasive for surface polishing of a compound semiconductor made of a group of materials such as GaAs, GaP, InAs, InP, etc., which enables high-speed mirror finishing with less scratches and scratches.
（従来の技術） エレクトロニクス技術はシリコン半導体によるIC回路に
よるコンピュータ技術が社会的ニーズへの対応に限界が
ある事から、シリコンデバイス性能を越えた第III−Ｖ
族化合物半導体による光電子集積回路、高速電子デバイ
ス、オプトエレクトロニクスデバイス等が注目されてい
る。(Prior Art) Since electronic technology has a limit in meeting the social needs of computer technology using IC circuits made of silicon semiconductors, the III-V
Optoelectronic integrated circuits, high-speed electronic devices, optoelectronic devices, and the like made of group compound semiconductors are drawing attention.
第III−Ｖ族化合物半導体としてはCaAs、GaP、GaSb、Al
P、AlAs、InAs、InP、InSb、GaAlAs、GaAsP等が挙げら
れる。またそれらの用途は発光ダイオード、半導体レー
ザー、太陽電池、マイクロ波ダイオード、光電子集積回
路及び磁気半導体素子等極めて広範囲である。Group III-V compound semiconductors include CaAs, GaP, GaSb, Al
P, AlAs, InAs, InP, InSb, GaAlAs, GaAsP and the like can be mentioned. Further, their applications are extremely wide range such as light emitting diodes, semiconductor lasers, solar cells, microwave diodes, optoelectronic integrated circuits and magnetic semiconductor devices.
上述の第III−Ｖ族の化合物の中でもGaAsはIC基板とデ
バイスの両分野で開発が積極的に行われている。これら
の用途の為のGaAs基板の工業的製法は、ボート法或いは
引き上げ法等で、GaAsのバルク結晶成長させ、その様に
して得られた塊からスライス、ウエファーを得て機械適
研磨と化学的エッチングを組み合わせた研磨法で鏡面仕
上げが行れている。Among the above-mentioned Group III-V compounds, GaAs is being actively developed in both fields of IC substrates and devices. The industrial manufacturing method of GaAs substrate for these uses is to grow a bulk crystal of GaAs by a boat method or a pulling method, obtain slices and wafers from the mass thus obtained, and perform mechanical polishing and chemical polishing. A mirror finish is performed by a polishing method that combines etching.
この化合物半導体の研磨法としては従来から下記の方法
が用いられている。The following method has been conventionally used as a polishing method for this compound semiconductor.
自由回転するスピンドルで支持されている集積用ブロッ
クに研磨すべく半導体のウエハーまたはスライスを固定
する。これを、回転するターンテーブルに支持されてい
るポリウレタン製研磨布に押し付けることで行われる
が、この際に高速、平滑化を目的として化学的エッチン
グを組み合わせる。この化学的エッチングの方法として
は、半導体表面と反応して機械研磨により表面から除去
可能とならしめる化学的研磨剤が選ばれる。A semiconductor wafer or slice is fixed for polishing to an integrating block supported by a freely rotating spindle. This is carried out by pressing it against a polyurethane polishing cloth supported by a rotating turntable, in which case chemical etching is combined for the purpose of high speed and smoothing. As the chemical etching method, a chemical polishing agent that reacts with the semiconductor surface and can be removed from the surface by mechanical polishing is selected.
従来から知られている化学的研磨剤としては次のような
ものがある。The following are known chemical polishing agents.
有効塩素2.4〜4.6g/のNaClO、KClO水溶液と炭酸ソ
ーダ（米国特許3342652号） 0.001〜0.05％のBr2を溶解するメタノール液。（英国
特許945933号） 塩化シアヌルをアルカリ水溶液に溶解した溶液。（特
開昭57−196723号） 酸性条件下で塩素を遊離する化合物の水溶液を使用
（特公昭57−35574） 〔発明が解決すべき問題点〕 上述の従来のGaAsの化学的研磨剤のうち、ではNaClO
の濃度が高い場合には加工速度は高いが、表面が酸化さ
れる欠点があった。またでは危険度の高いBr2を用い
るし、また加工度が遅い欠点がある。は水溶液の安定
性が低く研磨速度が極端に遅い欠点がある。は研磨時
に酸性水溶液を使用するため、有効塩素の安定性が低く
なる。また特に酸性条件下ではウエハーの表面にスクラ
ッチを生ずる欠点がある。A methanol solution in which 2.4 to 4.6 g of available chlorine, an aqueous solution of NaClO and KClO, and sodium carbonate (US Pat. No. 3342652) 0.001 to 0.05% of Br 2 are dissolved. (UK Patent No. 945933) A solution of cyanuric chloride dissolved in an alkaline aqueous solution. (JP-A-57-196723) Using an aqueous solution of a compound that releases chlorine under acidic conditions (JP-B-57-35574) [Problems to be solved by the invention] Of the above-mentioned conventional chemical polishing agents for GaAs , Then NaClO
When the concentration was high, the processing speed was high, but there was a drawback that the surface was oxidized. In addition, it uses Br 2 which has a high degree of risk, and has a drawback that the processing rate is slow. Has the drawback that the stability of the aqueous solution is low and the polishing rate is extremely slow. Since an acidic aqueous solution is used during polishing, the stability of available chlorine becomes low. There is also a drawback that scratches are generated on the surface of the wafer, especially under acidic conditions.
本発明は、この従来の問題点を解決するために従来に無
い新しい研磨剤を提供することを目的とするものであ
る。An object of the present invention is to provide a new polishing agent which has not existed in the prior art in order to solve this conventional problem.
本発明者等は上述の問題点を解決するために鋭意検討の
結果、塩素化イソシアヌル酸のアルカリ性水溶液が、加
工速度も早く、スクラッチの発生も少なく非常に優れた
鏡面が得られることを見出し本発明に研磨剤を見出し
た。The present inventors have conducted intensive studies to solve the above-mentioned problems, and found that an alkaline aqueous solution of chlorinated isocyanuric acid has a high processing speed and that a very excellent mirror surface with less scratches can be obtained. We have found an abrasive in the invention.
即ち、本発明は塩素化イソシアヌル酸、アルカリ金属の
燐酸塩と硫酸塩を主成分とし、その配合比は塩素化イソ
シアヌル酸が10〜40重量％、アルカリ金属の燐酸塩と硫
酸塩が60〜90重量％であり、且つアルカリ金属の燐酸塩
は硫酸塩１重量部に対して0.3〜２重量部であることを
特徴とする第III−Ｖ族化合物半導体の研磨剤に関す
る。That is, the present invention is mainly composed of chlorinated isocyanuric acid, alkali metal phosphates and sulfates, the compounding ratio is 10 to 40% by weight of chlorinated isocyanuric acid, alkali metal phosphates and sulfates of 60 to 90%. % Of the alkali metal phosphate and 0.3 to 2 parts by weight of the alkali metal phosphate with respect to 1 part by weight of the sulfate.
以下更に本発明を詳細に説明する。The present invention will be described in more detail below.
第III−Ｖ族化合物化合物半導体としては先にも述べた
が、GaAs、GaP、GaSb、AlP、AlAs、InAs、InP、InSb、G
aAlAs、GaAsP等が挙げられる。As described above as the group III-V compound semiconductor, GaAs, GaP, GaSb, AlP, AlAs, InAs, InP, InSb, G
Examples include aAlAs and GaAsP.
本発明で使用する主成分である塩素化イソシアヌル酸と
してはジシクロロイソシアヌル酸ナトリウムの無水及び
水和物、或いはジクロロイソシアヌル酸カリウムが好ま
しい。他の主成分であるアルカリ金属の燐酸塩と硫酸塩
としてはつぎのものが使用される。アルカリ金属の燐酸
塩としては燐酸ナトリウム、燐酸カリウム、トリポリ燐
酸ナトリウム、ヘキサメタ燐酸ナトリウム、ピロ燐酸ナ
トリウム、メタ燐酸ナトリウム等が挙げられる。またア
ルカリ金属の硫酸塩としては無水硫酸ナトリウム、水和
硫酸ナトリウムが好ましい。As the chlorinated isocyanuric acid which is the main component used in the present invention, anhydrous and hydrated sodium dicycloloisocyanurate or potassium dichloroisocyanurate is preferable. The following are used as alkali metal phosphates and sulfates which are the other main components. Examples of alkali metal phosphates include sodium phosphate, potassium phosphate, sodium tripolyphosphate, sodium hexametaphosphate, sodium pyrophosphate, and sodium metaphosphate. As the alkali metal sulfate, anhydrous sodium sulfate and hydrated sodium sulfate are preferable.
これらの主成分の配合比は、塩素化イソシアヌル酸10〜
40重量％、アルカリ金属の燐酸塩と硫酸塩60〜90重量％
であり、且つアルカリ金属の燐酸塩は硫酸塩１重量部に
対して0.3〜２重量部である。The mixing ratio of these main components is 10 to 10% of chlorinated isocyanuric acid.
40% by weight, alkali metal phosphate and sulfate 60-90% by weight
And the alkali metal phosphate is 0.3 to 2 parts by weight per 1 part by weight of the sulfate.
本発明の研磨剤は使用時には水に溶解させしようするの
だが、その際の活性塩素の濃度は0.2〜1.0になるように
する。The abrasive of the present invention is dissolved in water at the time of use, and the concentration of active chlorine at that time is adjusted to 0.2 to 1.0.
このように水溶液を調整した時に研磨剤水溶液のpHは8.
5〜9.5のアルカリ性になる。When the aqueous solution was adjusted in this way, the pH of the abrasive aqueous solution was 8.
Becomes alkaline of 5 to 9.5.
本発明の研磨剤はこれらの主成分の他にシリカ粉末、シ
リカゾル或いは有機酸の塩又は無機塩等を添加しても良
い。In addition to these main components, the abrasive of the present invention may contain silica powder, silica sol, a salt of an organic acid or an inorganic salt.
以下に本発明を実施例で更に詳しく説明するが、本発明
の技術的範囲はこれに限定されるものではない。Hereinafter, the present invention will be described in more detail with reference to Examples, but the technical scope of the present invention is not limited thereto.
実施例１〜８及び比較例１〜９ 表−１に示す研磨剤を調合し、その２％水溶液でGaAsの
研磨効果を調べた。結果を併せて表−１に示す。研磨方
法は半導体基板の研磨テストに使用されるテスト装置を
用いつぎのような条件で行い、研磨効果の評価方法も以
下に記す。Examples 1 to 8 and Comparative Examples 1 to 9 The polishing agents shown in Table 1 were prepared, and the polishing effect of GaAs was examined with a 2% aqueous solution thereof. The results are also shown in Table-1. The polishing method is carried out under the following conditions using a test apparatus used for a semiconductor substrate polishing test, and a method for evaluating the polishing effect is also described below.
比較例として表−２に示す研磨剤を用い実施例と同様に
評価を行った。As a comparative example, the abrasives shown in Table 2 were used and evaluated in the same manner as in the examples.
研磨用パッド；ポリウレタンフォーム 回転速度;450rpm ウエハー；＜100＞GaAs4.6〜5.1cm ウエハー保持パット；レーヨン布 研磨液供給速度;30〜50ml/m2.min （ウエハーの単位面積当たり） ウエハー保持圧；約2Kg/cm2 〔研磨効果の評価方法〕 研磨速度；研磨前と研磨後のGaAaのウエハーの厚みを測
定し、ウエハーストイック除去速度即ち１分間当たりの
研磨速度の３回の平均値より算出した。結果を表−１及
び表−２に示す。Polishing pad; Polyurethane foam Rotation speed; 450 rpm Wafer; <100> GaAs 4.6 to 5.1 cm Wafer holding pad; Rayon cloth Polishing liquid supply rate; 30 to 50 ml / m 2 .min (per unit area of wafer) Wafer holding pressure Approximately 2 kg / cm 2 [Evaluation method of polishing effect] Polishing rate; GaAa wafer thickness before and after polishing was measured, and calculated from the average value of the wafer strike removal rate, that is, the polishing rate per minute three times. did. The results are shown in Table-1 and Table-2.
スクラッチの発生程度の評価；微分緩衝型顕微鏡を用い
てウエファー表面を観察した。また暗室に於いて、黒い
紙の上に研磨後のウエファーを置き斜めから集光灯によ
り光を照射し、鏡面で反射せしめ、表面の乱反射の有無
の程度によりスクラッチの発生の程度を調べた。Evaluation of degree of scratch generation: The wafer surface was observed using a differential buffering microscope. In a dark room, a polished wafer was placed on a black paper and obliquely irradiated with a light from a condensing lamp, reflected by a mirror surface, and the degree of scratching was examined by the degree of irregular reflection on the surface.
結果を表−１及び表−２に示す。The results are shown in Table-1 and Table-2.
評価結果の記号は以下の意味である。The symbols of the evaluation results have the following meanings.
Ο スクラッチ全くない。Ο There is no scratch.
□ 〃 極めて少ない △ 〃 かなり少ない × 〃 幾分多い ×× 〃 かなり多い □ 〃 extremely low △ 〃 fairly low × 〃 somewhat high × × 〃 fairly high
Claims (5)
酸塩と硫酸塩を主成分とし、その配合比は塩素化イソシ
アヌル酸が10〜40重量％、アルカリ金属の燐酸塩と硫酸
塩が60〜90重量％であり、且つアルカリ金属の燐酸塩は
硫酸塩１重量部に対して0.3〜２重量部であることを特
徴とする第III−Ｖ族化合物半導体の研磨剤。1. A chlorinated isocyanuric acid, an alkali metal phosphate and a sulphate as main components, and a mixing ratio of chlorinated isocyanuric acid is 10 to 40% by weight, and an alkali metal phosphate and a sulphate are 60 to 90%. % Of the alkali metal phosphate and 0.3 to 2 parts by weight of the alkali metal phosphate with respect to 1 part by weight of the sulfate, and a polishing agent for a Group III-V compound semiconductor.
Sb、AlP、AlAs、InAs、InP、InSb、GaAlAs、GaAsPであ
ることを特徴とする特許請求の範囲第（１）項記載の第
III−Ｖ族化合物半導体の研磨剤。2. A group III-V compound semiconductor is CaAs, GaP, Ga.
Sb, AlP, AlAs, InAs, InP, InSb, GaAlAs, GaAsP, Claims (1)
III-V compound semiconductor polishing agent.
ヌル酸ナトリウムの無水物及び水和物、或いはジクロイ
ソシアヌル酸カリウムであることを特徴とする特許請求
の範囲第（１）項記載の第III−Ｖ族化合物半導体の研
磨剤。3. The group III-V according to claim 1, wherein the chlorinated isocyanuric acid is an anhydride and hydrate of sodium dichloroisocyanurate, or potassium dicloisocyanurate. Compound semiconductor polishing agent.
燐酸カリウム、トリポリ燐酸ナトリウム、ヘキサメタ燐
酸ナトリウム、ピロ燐酸ナトリウム、メタ燐酸ナトリウ
ムであることを特徴とする特許請求の範囲第（１）項記
載の第III−Ｖ族化合物半導体の研磨剤。4. The alkali metal phosphate is sodium phosphate,
The polishing agent for a group III-V compound semiconductor according to claim (1), which is potassium phosphate, sodium tripolyphosphate, sodium hexametaphosphate, sodium pyrophosphate, or sodium metaphosphate.
ム、水和硫酸ナトリウムであることを特徴とする特許請
求の範囲第（１）項記載の第III−Ｖ族化合物半導体の
研磨剤。5. The polishing agent for a Group III-V compound semiconductor according to claim 1, wherein the alkali metal sulfate is anhydrous sodium sulfate or hydrated sodium sulfate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61230446A JPH0767666B2 (en) | 1986-09-29 | 1986-09-29 | Group III-V compound semiconductor polishing agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61230446A JPH0767666B2 (en) | 1986-09-29 | 1986-09-29 | Group III-V compound semiconductor polishing agent |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6384872A JPS6384872A (en) | 1988-04-15 |
| JPH0767666B2 true JPH0767666B2 (en) | 1995-07-26 |
Family
ID=16908013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61230446A Expired - Lifetime JPH0767666B2 (en) | 1986-09-29 | 1986-09-29 | Group III-V compound semiconductor polishing agent |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0767666B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8841215B2 (en) | 2010-05-10 | 2014-09-23 | Sumitomo Electric Industries, Ltd. | Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63180465A (en) * | 1987-01-21 | 1988-07-25 | Toshiba Corp | Polishing liquid |
| JPH01187930A (en) * | 1988-01-22 | 1989-07-27 | Nippon Telegr & Teleph Corp <Ntt> | Abrasive powder and abrasive method |
| US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
| JP2006210298A (en) * | 2004-12-27 | 2006-08-10 | Moshi:Kk | Ultraviolet lamp |
| JP4555752B2 (en) * | 2005-08-31 | 2010-10-06 | 山口精研工業株式会社 | Semiconductor wafer polishing liquid composition and semiconductor wafer polishing method |
| JP4552968B2 (en) * | 2007-05-29 | 2010-09-29 | 住友電気工業株式会社 | Compound semiconductor substrate polishing method, compound semiconductor substrate, compound semiconductor epi substrate manufacturing method, and compound semiconductor epi substrate |
| JP6068790B2 (en) * | 2011-11-25 | 2017-01-25 | 株式会社フジミインコーポレーテッド | Method for producing polishing composition |
-
1986
- 1986-09-29 JP JP61230446A patent/JPH0767666B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8841215B2 (en) | 2010-05-10 | 2014-09-23 | Sumitomo Electric Industries, Ltd. | Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6384872A (en) | 1988-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |