Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0770247B2 - Heat resistant charge transfer complex - Google Patents
[go: Go Back, main page]

JPH0770247B2 - Heat resistant charge transfer complex - Google Patents

Heat resistant charge transfer complex

Info

Publication number
JPH0770247B2
JPH0770247B2 JP63055989A JP5598988A JPH0770247B2 JP H0770247 B2 JPH0770247 B2 JP H0770247B2 JP 63055989 A JP63055989 A JP 63055989A JP 5598988 A JP5598988 A JP 5598988A JP H0770247 B2 JPH0770247 B2 JP H0770247B2
Authority
JP
Japan
Prior art keywords
charge transfer
complex
transfer complex
capacitor
iodide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63055989A
Other languages
Japanese (ja)
Other versions
JPH01231207A (en
Inventor
修光 進藤
誠 海老沢
功 伊佐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Carlit Co Ltd
Original Assignee
Japan Carlit Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Carlit Co Ltd filed Critical Japan Carlit Co Ltd
Priority to JP63055989A priority Critical patent/JPH0770247B2/en
Publication of JPH01231207A publication Critical patent/JPH01231207A/en
Publication of JPH0770247B2 publication Critical patent/JPH0770247B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Pyridine Compounds (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、導電性及び耐熱性の優れた電荷移動錯体に関
する。また本発明は上記電荷移動錯体を使用した固体電
解コンデンサに関するものである。
TECHNICAL FIELD The present invention relates to a charge transfer complex having excellent conductivity and heat resistance. The present invention also relates to a solid electrolytic capacitor using the above charge transfer complex.

(従来の技術) 近年、ディジタル機器の発展に伴なって高周波領域にお
いてインピーダンスが低くかつ高周波特性の優れた大容
量のコンデンサの要求が高まっている。
(Prior Art) In recent years, with the development of digital equipment, there is an increasing demand for a large-capacity capacitor having a low impedance in a high frequency region and excellent high frequency characteristics.

従来、高周波特性の優れたコンデンサとしては、フィル
ム、マイカ、セラミックコンデンサが用いられている
が、大容量化にすると形状が大きくなり価格も高くな
る。
Conventionally, films, mica, and ceramic capacitors have been used as capacitors having excellent high-frequency characteristics, but when the capacity is increased, the shape becomes larger and the cost becomes higher.

また大容量のコンデンサとしての電解コンデンサには電
解液式と二酸化マンガンを用いる固体電解質式がある。
前者は経時的コンデンサ特性が悪く、電解質がイオン伝
導性であるために高周波特性も悪い。後者は硝酸マンガ
ンの熱分解時に酸化皮膜が損傷しやすいなどの理由によ
り高周波領域でのインピーダンスあるいは損失が高い。
Further, electrolytic capacitors as large-capacity capacitors include electrolytic solution type and solid electrolyte type using manganese dioxide.
The former has poor capacitor characteristics over time, and the high frequency characteristics are also poor because the electrolyte is ionic conductive. The latter has high impedance or loss in the high frequency region because the oxide film is easily damaged during the thermal decomposition of manganese nitrate.

上記の従来のコンデンサの欠点を解決する目的で、7,7,
8,8−テトラシアノキノジメタン(以下TCNQと略す)を
アクセプターとし、各種ドナーとの組み合わせからなる
電荷移動錯体を固体電解質とする電解コンデンサが提案
されている。提案されたTCNQ電荷移動錯体のドナーはN
−n−ヘキシルキノリン、N−エチルイソキノリン、ま
たはN−n−ブチルイソキノリン(特開昭58−1914
4)、N−n−アミルイソキノリン、またはN−イソア
ミルイソキノリン(特開昭62−116552)などがある。
In order to solve the above drawbacks of conventional capacitors, 7,7,
An electrolytic capacitor has been proposed which uses 8,8-tetracyanoquinodimethane (hereinafter abbreviated as TCNQ) as an acceptor and a charge transfer complex composed of a combination with various donors as a solid electrolyte. The donor of the proposed TCNQ charge transfer complex is N
-N-hexylquinoline, N-ethylisoquinoline, or Nn-butylisoquinoline (JP-A-58-1914)
4), N-n-amylisoquinoline, or N-isoamylisoquinoline (JP-A-62-116552).

他方、電子機器の小型化、軽薄化、さらには省資源化な
どから電子部品のチップ化が必然的となってきている。
このチップ部品は回路パターンであるランドとチップ部
品の端子とをリフローソルダ法またはディップソルダ法
等によりはんだ付けされる。このためTCNQ電荷移動錯体
も230℃以上の耐熱性が要求されている。
On the other hand, the miniaturization and thinning of electronic devices, and further resource saving have made it necessary to make electronic components into chips.
In this chip component, a land which is a circuit pattern and a terminal of the chip component are soldered by a reflow soldering method or a dip soldering method. Therefore, the TCNQ charge transfer complex is also required to have a heat resistance of 230 ° C or higher.

(発明が解決しようとする問題点) しかし、現在まで提案されているTCNQ電荷移動錯体は23
0℃よりも低い温度で熱溶融し、この状態である時間以
上放置すると酸化分解を起こす。このため、特にはんだ
付けの時にコンデンサ特性の損失が大きくなり、導電性
も低下し、高周波特性が悪くなる。
(Problems to be solved by the invention) However, the TCNQ charge transfer complex proposed up to now is 23
When it is melted by heat at a temperature lower than 0 ° C and left in this state for a certain period of time or longer, oxidative decomposition occurs. For this reason, the loss of the capacitor characteristics becomes large especially at the time of soldering, the conductivity also decreases, and the high frequency characteristics deteriorate.

本発明の目的は上記問題点を解決するもので、第一に耐
熱性及び導電性の優れた電荷移動錯体を提供することに
あり、第二に該電荷移動錯体をコンデンサの電解質にす
ることにより、はんだ付けにも耐え得る特性の優れた電
解コンデンサを提供することにある。
An object of the present invention is to solve the above problems, and firstly to provide a charge transfer complex having excellent heat resistance and conductivity, and secondly to use the charge transfer complex as an electrolyte of a capacitor. Another object of the present invention is to provide an electrolytic capacitor having excellent characteristics that can withstand soldering.

(問題点を解決するための手段) 本発明者等は上記目的のために鋭意研究した結果、N位
を炭素数2〜6のアルキル基で置換した3−フェニルピ
リジンをドナーとし、TCNQをアクセプターとする電荷移
動錯体が上記問題を解決し、またこれらの錯体を電解質
としたコンデンサが特に耐熱性の優れた固体電解コンデ
ンサである事を見出し、本発明を完成するに至った。
(Means for Solving the Problems) As a result of intensive studies for the above purpose, the present inventors have found that 3-phenylpyridine in which the N-position is substituted with an alkyl group having 2 to 6 carbons is a donor and TCNQ is an acceptor. The present inventors have completed the present invention by finding that the charge transfer complex described above solves the above problems, and that a capacitor using these complexes as an electrolyte is a solid electrolytic capacitor having particularly excellent heat resistance.

次に本発明の錯体の合成法について説明する。対応する
炭素数2〜6のアルキルアイオダイドとドナーの母体と
なる3−フェニルピリジンとをアルコール性溶媒中にて
反応させ、N位に対応するアイオダイドを導入し、ドナ
ーを得、前記ドナーとTCNQとをアセトニトリル中にて反
応させると、本発明の耐熱性電荷移動錯体が得られる。
Next, a method for synthesizing the complex of the present invention will be described. The corresponding alkyl iodide having 2 to 6 carbon atoms and 3-phenylpyridine, which is the donor matrix, are reacted in an alcoholic solvent to introduce the iodide corresponding to the N-position to obtain a donor, and the donor and TCNQ. When the and are reacted in acetonitrile, the heat resistant charge transfer complex of the present invention is obtained.

一般に電荷移動錯体はアクセプターとドナーのモル比が
1または2のものが知られているが、本発明の錯体のモ
ル比は1.5ないし3、好ましくは1.8ないし2.2とする。
Generally, a charge transfer complex having a molar ratio of acceptor to donor of 1 or 2 is known, and the molar ratio of the complex of the present invention is 1.5 to 3, preferably 1.8 to 2.2.

このようにして得られた該電荷移動錯体を熱溶融させ、
陽極体及び陰極体からなる素子の両極間に含浸させ、そ
の後冷却して錯体を付着させてコンデンサ素子とし、こ
れを組み込んで固体電解コンデンサとする。
Heat-melting the charge transfer complex thus obtained,
It is impregnated between both electrodes of an element composed of an anode body and a cathode body and then cooled to attach a complex to form a capacitor element, which is incorporated into a solid electrolytic capacitor.

以下、実施例により本発明をさらに詳しく説明する。Hereinafter, the present invention will be described in more detail with reference to examples.

実施例1 エチルアイオダイド16.0g、3−フェニルピリジン15.5g
およびエチルアルコール50mlを還流冷却器および攪拌器
のついたフラスコに入れ還流下で3時間反応させた。反
応終了後減圧下でエチルアルコールを蒸発留去し、固形
分残渣をエチルエーテル50mlで2回洗浄し、N−エチル
−3−フェニルピリジニウムアイオダイド27.3gを得
た。次いでアセトニトリル150mlとTCNQ2.04gを還流冷却
器および攪拌器のついたフラスコに入れ加熱し、これに
N−エチル−3−フェニルピリジニウムアイオダイド2.
33gを溶解させたアセトニリル溶液50mlを滴下し、30分
間還流反応させた。反応液を冷却後、析出した結晶をろ
別し、メチルアルコール50mlで2回洗浄し、N−エチル
3−フェニルピリジニウム・TCNQ錯体2.57gを得た。該
錯体の元素分析の結果を次に示す。
Example 1 16.0 g of ethyl iodide, 15.5 g of 3-phenylpyridine
And 50 ml of ethyl alcohol was placed in a flask equipped with a reflux condenser and a stirrer and reacted under reflux for 3 hours. After completion of the reaction, ethyl alcohol was distilled off under reduced pressure, and the solid residue was washed twice with 50 ml of ethyl ether to obtain 27.3 g of N-ethyl-3-phenylpyridinium iodide. Then, 150 ml of acetonitrile and 2.04 g of TCNQ were placed in a flask equipped with a reflux condenser and a stirrer and heated, and N-ethyl-3-phenylpyridinium iodide 2.
50 ml of an acetoniryl solution in which 33 g was dissolved was added dropwise, and the mixture was refluxed for 30 minutes. After cooling the reaction solution, the precipitated crystals were filtered off and washed twice with 50 ml of methyl alcohol to obtain 2.57 g of N-ethyl 3-phenylpyridinium.TCNQ complex. The results of elemental analysis of the complex are shown below.

元素分析値C37H23N9 計算値:C%:74.86,H%:3.91,N%:21.23 実測値:C%:74.67,H%:3.98,N%:21.35 また熱分析装置を用いた示差熱分析の結果(第1図)、
該錯体の融点は235℃、発熱分解点は255℃であった。ま
た該錯体の赤外吸収スペクトルを第10図に示した。
Elemental analysis value C 37 H 23 N 9 Calculated value: C%: 74.86, H%: 3.91, N%: 21.23 Measured value: C%: 74.67, H%: 3.98, N%: 21.35 Also, a thermal analyzer was used. Results of differential thermal analysis (Fig. 1),
The melting point of the complex was 235 ° C, and the exothermic decomposition point was 255 ° C. The infrared absorption spectrum of this complex is shown in FIG.

次に該錯体60mgを直径6.3mmのアルミケースに充填し、
加熱溶解させ巻回型アルミ電解コンデンサユニットを浸
漬させ、直ちに冷却しコンデンサを得た。コンデンサユ
ニットはアルミニウム表面を化成処理して酸化皮膜を形
成させたものを用い、浸漬前に予め加熱しておいた。得
られたコンデンサの特性を第2表の耐熱試験前の欄に示
した。次にこのコンデンサを230℃の半田浴中にケース
ごと30秒間入れ室温に放置後、再びコンデンサ特性を測
定した。この値を第2表の耐熱試験後の欄に示した。
Next, 60 mg of the complex was filled in an aluminum case having a diameter of 6.3 mm,
The winding type aluminum electrolytic capacitor unit was immersed in heat and melted, and immediately cooled to obtain a capacitor. As the capacitor unit, an aluminum surface was subjected to chemical conversion treatment to form an oxide film, and the capacitor unit was preheated before immersion. The characteristics of the obtained capacitor are shown in the column before the heat resistance test in Table 2. Next, this capacitor was put together with the case in a solder bath at 230 ° C. for 30 seconds and left at room temperature, and the capacitor characteristics were measured again. This value is shown in the column after the heat resistance test in Table 2.

実施例2〜7 エチルアイオダイドの代わりに、これと等モルのn−プ
ロピルアイオダイド、iso−プロピルアイオダイド、n
−ブチルアイオダイド、n−アミルアイオダイド、iso
−アミルアイオダイド、n−ヘキシルアイオダイドを用
いた以外は実施例1に準じてTCNQ電荷移動錯体を合成
し、熱分析装置を用いた示差熱分析の結果から融点と発
熱分解点を測定し第1表に示した。対応する示差熱分析
データおよび赤外吸収スペクトルを、n−プロピルは第
2図及び第11図、iso−プロピルは第3図及び第12図、
n−ブチルは第4図及び第13図、n−アミルは第5図及
び第14図、iso−アミルは第6図及び第15図、n−ヘキ
シルは第7図及び第16図にそれぞれ示した。
Examples 2 to 7 Instead of ethyl iodide, equimolar amounts of n-propyl iodide, iso-propyl iodide, n
-Butyl iodide, n-amyl iodide, iso
-The TCNQ charge transfer complex was synthesized according to Example 1 except that amyl iodide and n-hexyl iodide were used, and the melting point and exothermic decomposition point were measured from the results of differential thermal analysis using a thermal analyzer. The results are shown in Table 1. The corresponding differential thermal analysis data and infrared absorption spectrum are shown in FIGS. 2 and 11 for n-propyl, and FIGS. 3 and 12 for iso-propyl.
n-butyl is shown in FIGS. 4 and 13, n-amyl is shown in FIGS. 5 and 14, iso-amyl is shown in FIGS. 6 and 15, and n-hexyl is shown in FIGS. 7 and 16, respectively. It was

次いで実施例1に従ってコンデンサを得、耐熱試験前後
のコンデンサ特性を測定しこれらの値を第2表に示し
た。
Then, a capacitor was obtained according to Example 1, and the capacitor characteristics before and after the heat resistance test were measured. These values are shown in Table 2.

比較例1 エチルアイオダイドの代りにn−ブチルアイオダイド1
8.4gを、また3−フェニルピリジンの代わりにキノリン
12.9gをそれぞれ用いた以外は実施例1に準じてN−n
−ブチルキノリニウムTCNQ錯体を合成し、熱分析装置を
用いた示差熱分析データ(第8図)から融点と発熱分解
点を測定し結果を第1表に示した。またこの赤外吸収ス
ペクトルを第17図に示した。
Comparative Example 1 n-Butyl iodide 1 instead of ethyl iodide
8.4 g of quinoline instead of 3-phenylpyridine
N-n according to Example 1 except that 12.9 g was used respectively.
-Butylquinolinium TCNQ complex was synthesized, and the melting point and exothermic decomposition point were measured from the differential thermal analysis data (Fig. 8) using a thermal analyzer, and the results are shown in Table 1. The infrared absorption spectrum is shown in FIG.

次いで実施例1に従ってコンデンサを得、耐熱試験前後
のコンデンサ特性を測定しこれらの値を第2表に示し
た。
Then, a capacitor was obtained according to Example 1, and the capacitor characteristics before and after the heat resistance test were measured. These values are shown in Table 2.

比較例2 エチルアイオダイドの代りにiso−アミルアイオダイド1
9.8gを、また3−フェニルピリジンの代わりに4−フェ
ニルピリジンをそれぞれ用いた以外は実施例1に準じて
TCNQ錯体を合成し、熱分析装置を用いた示差熱分析デー
タ(第9図)から融点と発熱分解点を測定し結果を第1
表に示した。またこの赤外吸収スペクトルを第18図に示
した。
Comparative Example 2 Instead of ethyl iodide, iso-amyl iodide 1
According to Example 1, except that 9.8 g was used and 4-phenylpyridine was used instead of 3-phenylpyridine.
The TCNQ complex was synthesized, and the melting point and exothermic decomposition point were measured from the differential thermal analysis data (Fig. 9) using a thermal analysis device, and the results are
Shown in the table. The infrared absorption spectrum is shown in FIG.

次いで実施例1に従ってコンデンサを得、耐熱試験前後
のコンデンサ特性を測定しこれらの値を第2表に示し
た。
Then, a capacitor was obtained according to Example 1, and the capacitor characteristics before and after the heat resistance test were measured. These values are shown in Table 2.

第1表から、実施例に示した錯体は一様に融点が230℃
以上と高く、かつ、比較例1に挙げたN−n−ブチルキ
ノリニウム錯体あるいは従来知られている錯体よりも発
熱分解点が高いので、熱安定性がきわめて優れているこ
とがわかった。
From Table 1, the complexes shown in the examples have a uniform melting point of 230 ° C.
It was found that the thermal stability was extremely excellent because it was higher than the above and had a higher exothermic decomposition point than the N-n-butylquinolinium complex described in Comparative Example 1 or the conventionally known complex.

第2表中のCapは20℃、120Hzにおける静電容量(μ
F)、tanδは20℃、120Hzにおける誘電正接(%)、ES
Rは20℃、100kHzにおける等価直列抵抗(mΩ)であ
る。△C/Cは20℃に対する85℃の静電容量の変化率
(%)である。
Cap in Table 2 is the capacitance at 20 ° C and 120Hz (μ
F), tan δ is dielectric loss tangent (%), ES at 20 ° C, 120Hz
R is the equivalent series resistance (mΩ) at 20 ° C and 100kHz. ΔC / C is the rate of change (%) in capacitance at 85 ° C. with respect to 20 ° C.

第2表から、3−フェニルピリジニウムを用いた錯体で
作ったコンデンサがその異性体である耐熱性の4−フェ
ニルピリジニウムを用いた錯体で作ったコンデンサに比
べtanδ、ESR等が向上しており、実施例に示す錯体で作
ったコンデンサをはんだ浴に入れた後の特性は初期特性
と比べ変化が少なく、優れたコンデンサ特性を示すこと
が判明した。
From Table 2, the capacitors made with the complex using 3-phenylpyridinium have improved tan δ, ESR, etc. compared to the capacitors made with the complex using the heat-resistant 4-phenylpyridinium which is its isomer. It was found that the characteristics after the capacitors made of the complexes shown in the examples were put in the solder bath did not change much compared to the initial characteristics, and that the capacitors exhibited excellent characteristics.

(発明の効果) 本発明のN位を炭素数2〜6のアルキル基で置換した3
−フェニルピリジンとTCNQとからなる電荷移動錯体は23
0℃以上の融点を持ち、熱安定性が著しく改良された。
また本発明の錯体を電解質とした固体電解コンデンサ
は、はんだ付けにも耐え得る耐熱性を示すため、損失が
少なく、導電率も低下せず、高周波特性の優れたコンデ
ンサである。
(Effect of the Invention) 3 in which the N-position of the present invention is substituted with an alkyl group having 2 to 6 carbon atoms
-A charge transfer complex consisting of phenylpyridine and TCNQ
It has a melting point of 0 ° C or higher, and its thermal stability is remarkably improved.
In addition, the solid electrolytic capacitor using the complex of the present invention as an electrolyte exhibits heat resistance that can withstand soldering, and therefore has a small loss, a low conductivity, and a high frequency characteristic.

【図面の簡単な説明】[Brief description of drawings]

第1図〜第7図及び第10図〜第16図は本発明の実施例1
〜7の錯体の示差熱分析データ及び赤外吸収スペクトル
であり、第8図及び第17図は比較例1により、第9図及
び第18図は比較例2により得られた錯体の示差熱分析デ
ータ及び赤外吸収スペクトルである。
1 to 7 and 10 to 16 show a first embodiment of the present invention.
8 is a differential thermal analysis data and infrared absorption spectra of the complexes of Nos. 7 to 7, and FIGS. 8 and 17 show the results of Comparative Example 1, and FIGS. 9 and 18 show the results of Comparative Thermal Analysis of the complexes of Comparative Example 2. It is data and an infrared absorption spectrum.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】N位を炭素数2〜6のアルキル基で置換し
た3−フェニルピリジンをドナーとし、7,7,8,8−テト
ラシアノキノジメタンをアクセプターとする耐熱性電荷
移動錯体。
1. A heat-resistant charge transfer complex which uses 3-phenylpyridine in which the N-position is substituted with an alkyl group having 2 to 6 carbon atoms as a donor and 7,7,8,8-tetracyanoquinodimethane as an acceptor.
【請求項2】N位を炭素数2〜6のアルキル基で置換し
た3−フェニルピリジンをドナーとし、7,7,8,8−テト
ラシアノキノジメタンをアクセプターとする耐熱性電荷
移動錯体を電解質とする耐熱性固体電解コンデンサ。
2. A heat-resistant charge transfer complex which uses 3-phenylpyridine having an N-position substituted by an alkyl group having 2 to 6 carbon atoms as a donor and 7,7,8,8-tetracyanoquinodimethane as an acceptor. A heat-resistant solid electrolytic capacitor with an electrolyte.
JP63055989A 1988-03-11 1988-03-11 Heat resistant charge transfer complex Expired - Lifetime JPH0770247B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63055989A JPH0770247B2 (en) 1988-03-11 1988-03-11 Heat resistant charge transfer complex

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63055989A JPH0770247B2 (en) 1988-03-11 1988-03-11 Heat resistant charge transfer complex

Publications (2)

Publication Number Publication Date
JPH01231207A JPH01231207A (en) 1989-09-14
JPH0770247B2 true JPH0770247B2 (en) 1995-07-31

Family

ID=13014499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63055989A Expired - Lifetime JPH0770247B2 (en) 1988-03-11 1988-03-11 Heat resistant charge transfer complex

Country Status (1)

Country Link
JP (1) JPH0770247B2 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58191414A (en) * 1982-05-04 1983-11-08 三洋電機株式会社 Solid electrolytic condenser
JPH0684351B2 (en) * 1986-07-07 1994-10-26 和光純薬工業株式会社 Novel TCNQ complex
JPH0770441B2 (en) * 1986-07-10 1995-07-31 和光純薬工業株式会社 Solid electrolytic capacitor
JP2740097B2 (en) * 1992-03-19 1998-04-15 株式会社東芝 Clock synchronous semiconductor memory device and access method therefor

Also Published As

Publication number Publication date
JPH01231207A (en) 1989-09-14

Similar Documents

Publication Publication Date Title
JP2640663B2 (en) Thermostable charge transfer complex
JP2649239B2 (en) Heat-resistant charge transfer complex and heat-resistant solid electrolytic capacitor
JP2649240B2 (en) Heat-resistant charge transfer complex and heat-resistant solid electrolytic capacitor
JP2649238B2 (en) Heat-resistant charge transfer complex and heat-resistant solid electrolytic capacitor
JPH0770247B2 (en) Heat resistant charge transfer complex
JP2673436B2 (en) Heat-resistant charge transfer complex and heat-resistant solid electrolytic capacitor
JP2586917B2 (en) Heat resistant solid electrolytic capacitors
EP0224207B1 (en) Charge transfer complex
EP0367147B1 (en) Charge transfer complex and solid electrolytic capacitor employing the same
JPH01165575A (en) Thermostable charge transfer complex
JPH0625110B2 (en) Heat resistant charge transfer complex
US4828738A (en) Solid electrolytic capacitor
JP2735262B2 (en) Solid electrolytic capacitor and method of manufacturing the same
JPH05217808A (en) Solid electrolytic capacitor and manufacturing method thereof
CA1099090A (en) Capacitor electrolyte and capacitor containing same
JPH02121323A (en) Chip type solid electrolytic capacitor
JPH02260516A (en) Solid electrolytic capacitor and manufacture thereof
JPH02294009A (en) Solid electrolytic capacitor
JPH03237707A (en) Solid electrolytic capacitor
JPH02241014A (en) Solid electrolytic capacitor
JPS63215034A (en) Solid electrolytic capacitor
JPS63219120A (en) Solid electrolytic capacitor
JPH02260409A (en) Solid electrolytic capacitor
JPS63132417A (en) Solid electrolytic capacitor
JPH02239609A (en) Solid electrolytic capacitor